HY4504W [HUAYI]
N-Channel Enhancement Mode MOSFET;
| 型号： | HY4504W |
| 厂家： | 
HUAYI MICROELECTRONICS CO.,LTD. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总11页 (文件大小：637K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY4504W/A
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
40V/250A
2.0 m
Ω(typ.) @ VGS=10V
RDS(ON)
=
•
•
•
AvalancheRated
Reliable and Rugged
Halogen Free andGreenDevicesAvailable
(RoHSCompliant)
S
S
D
G
G
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Applications
Power Management for Inverter Systems.
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Ordering and Marking Information
Package Code
W : TO-247A-3L
A : TO-3P-3L
W
A
HY4504 HY4504
Assembly Material
Date Code
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G : Halogen Free Device
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HY4504W/A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
40
±20
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
TSTG
IS
-55 to 175
250
TC=25°C
Mounted on Large Heat Sink
IDM
Pulsed Drain Current *
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
860**
250
172
336
168
0.47
40
A
A
ID
Continuous Drain Current
PD
Maximum Power Dissipation
W
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
RJC
RJA
°C/W
Avalanche Ratings
EAS Avalanche Energy, Single Pulsed
Note：
2.2***
J
L=0.3mH
* Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=32V
Electrical Characteristics (TC = 25qC Unless Otherwise Noted)
HY4504
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
40
-
-
-
-
1
V
VGS=0V, IDS=250A
VDS=40V, VGS=0V
IDSS Zero Gate Voltage Drain Current
A
TJ=85°C
-
-
10
4
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)
Diode Characteristics
2
-
3
V
VDS=VGS, IDS=250A
VGS=±20V, VDS=0V
-
±100
2.4
nA
m
2.0
*
Drain-Source On-state Resistance VGS=10V, IDS=125A
-
VSD*
trr
Diode Forward Voltage
ISD=125A, VGS=0V
-
-
-
0.8
40
63
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
-
-
ns
nC
ISD=125A,dlSD/dt=100A/s
Qrr
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HY4504W/A
Electrical Characteristics (Cont.) (TC = 25qC Unless Otherwise Noted)
HY4504
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
RG
Ciss
Coss
Crss
td(ON)
Tr
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
-
-
-
-
-
-
-
1.0
7276
1800
614
36
-
-
-
-
-
-
-
-
Input Capacitance
VGS=0V,
VDS=25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
VDD=20V, RG=6 ,
IDS=125A, VGS=10V,
20
ns
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics
45
63
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
197
31
-
-
-
VDS=32V, VGS=10V,
IDS=125A
nC
81
Note * : Pulse test ; pulse width 300s, duty cycle2%.
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HY4504W/A
Typical Operating Characteristics
Power Dissipation
Drain Current
350
300
250
200
500
400
300
200
100
limited by package
150
100
50
0
TC=25oC
0
TC=25oC,VG=10V
0
20 40 60 80 100 120 140 160 180 200
0
20 40 60 80 100 120 140 160 180 200
Tc -
Temperature (°C)
Tc-Case Temperature (°C)
Case
Safe Operation Area
1000
100us
10ms
100
10
1ms
DC
1
0.1
1
10
100
400
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
1
Duty = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.001
0.01
Mounted on minimum pad
RJA : 40oC/W
Single
0.0001
0.1
0.0001
0.001
0.01
1
10
Square Wave Pulse Duration (sec)
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HY4504W/A
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
320
280
240
200
160
120
80
3.5
VGS= 6,7,8,9,10V
5.5V
3.0
2.5
5V
VGS=10V
4.5V
2.0
1.5
1.0
40
0
0.0
0
60
120
180
240
300
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
4.0
3.5
IDS=125A
IDS =250A
3.0
2.5
2.0
1.5
1.0
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150 175
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
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HY4504W/A
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
VGS = 10V
IDS =125A
1000
100
10
Tj=175oC
Tj=25oC
RON@Tj=25oC: 2.0m
1
-50 -25
0
25 50 75 100 125 150 175
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
10
11000
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
Frequency=1MHz
Ciss
VDS= 32V
IDS= 125A
9
8
7
6
5
4
3
2
1
0
Coss
Crss
0
5
10 15 20 25 30 35 40
0
30 60 90 120 150 180 210 240
VDS - Drain - Source Voltage (V)
QG -Gate Charge (nC)
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HY4504W/A
Avalanche Test Circuit
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01Ω
tAV
Avalanche Test Circuit
VDS
RD
V
DS
DUT
90%
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
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HY4504W/A
Package Information
TO-247-3L
mm
NOM
SYMBOL
MIN
MAX
A
A1
A2
b
b2
b4
c
4.80 5.00 5.20
2.21 2.41 2.61
1.85 2.00 2.15
1.11 1.21 1.36
1.91 2.01 2.21
2.91 3.01 3.21
0.51 0.61 0.75
20.70 21.00 21.30
D
D1 16.25 16.55 16.85
15.50 15.80 16.10
E1 13.00 13.30 13.60
E
E2
E3
e
4.80 5.00 5.20
2.30 2.50 2.70
5.44BSC
L
L1
19.62 19.92 20.22
-
-
4.30
ꢀP 3.40 3.60 3.80
ꢀP1
S
-
-
6.15BSC
7.30
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HY4504W/A
TO-3P-3L
mm
NOM
SYMBOL
MIN
4.60
1.40
1.18
0.80
2.80
1.80
0.50
19.60
13.55
MAX
5.00
1.65
1.58
1.20
3.20
2.20
0.75
20.20
14.25
A
A1
A2
b
b1
b2
c
4.80
1.50
1.38
1.00
3.00
2.00
0.60
19.90
13.90
D
D1
D2
E
E4
e
12.90 REF
15.60
-
15.35
12.60
15.85
-
5.45 TYP
H
40.10
23.15
40.50
23.40
3.20 REF
3.50 REF
40.90
23.65
H1
ꢀP1
ꢀP2
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HY4504W/A
Devices Per Unit
Package Type
TO-247-3L
TO-3P-3L
Unit
Tube
Tube
Quantity
30
30
Classification Profile
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HY4504W/A
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
100 qC
150 qC
60-120 seconds
150 qC
200 qC
60-120 seconds
Temperature min (Tsmin
)
Temperature max (Tsmax
)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
3 qC/second max.
3qC/second max.
Liquidous temperature (TL)
Time at liquidous (tL)
183 qC
60-150 seconds
217 qC
60-150 seconds
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
20** seconds
See Classification Temp in table 2
30** seconds
Time (tP)** within 5qC of the specified
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 qC/second max.
6 qC/second max.
6 minutes max.
8 minutes max.
Time 25qC to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
Package
Thickness
Volume mm3
<350
≥350
<2.5 mm
235 qC
220 qC
220 qC
2.5 mm
220 qC
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
Volume mm3
350-2000
260 qC
Volume mm3
<350
260 qC
260 qC
250 qC
>2000
260 qC
245 qC
245 qC
1.6 mm – 2.5 mm
2.5 mm
250 qC
245 qC
Reliability Test Program
Test item
SOLDERABILITY
Method
JESD-22,ꢀB102
JESD-22,ꢀA108
JESD-22,ꢀA102
JESD-22,ꢀA104
Description
5 Sec, 245qC
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500 Cycles, -ꢅ5qC~150qC
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