HY65R201MF [HUAYI]
N-Channel Super Junction Power MOSFET;
| 型号： | HY65R201MF |
| 厂家： | 
HUAYI MICROELECTRONICS CO.,LTD. |
| 描述： | N-Channel Super Junction Power MOSFET |
| 文件： | 总13页 (文件大小：2374K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY65R201P/B/MF/W
N-Channel Super Junction Power MOSFET
Features
Pin Description
650V/20A
RDS(ON)= 0.16Ω(typ.)@VGS = 10V
100% Avalanche Tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
TO-220FB-3L
TO-220MF-3L
TO-263-2L
TO-247-3L
Applications
PFC Power Supply Stages
Switching Applications
Motor Control
AC/DC or DC/DC Converters
N-Channel MOSFET
Ordering and Marking Information
Package Code
P: TO-220FB-3L
B: TO-263-2L
P
MF
MF: TO-220MF-3L
W: TO-247-3L
HY65R201
YYXXXJWW G
HY65R201
YYXXXJWW G
B
W
Date Code
YYXXX WW
Assembly Material
G: Halogen Free
HY65R201
YYXXXJWW G
HY65R201
YYXXXJWW G
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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HY65R201P/B/MF/W
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
650
±30
V
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Source Current-Continuous(Body Diode)
150
°C
°C
A
TSTG
IS
-55 to 150
20
Tc=25°C
Mounted on Large Heat Sink
Tc=25°C
78
20
A
A
IDM
Pulsed Drain Current *
Tc=25°C
Tc=100°C
Tc=25°C
Tc=100°C
Tc=25°C
Tc=100°C
L=10.8mH
ID
Continuous Drain Current
13
A
151
60
W
W
W
W
mJ
Maximum Power Dissipation
TO-220/TO-263/TO-247
PD
Maximum Power Dissipation
TO-220MF
34
PD
14
EAS
Single Pulsed-Avalanche Energy **
390
Thermal Characteristics TO-220/TO-263/TO-247
RJC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient***
0.83
62
°C/W
°C/W
RJA
Thermal Characteristics TO-220MF
RJC
Thermal Resistance, Junction-to-Case
3.7
80
°C/W
°C/W
RJA
Thermal Resistance, Junction-to-Ambient***
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
HY65R201
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Static Characteristics
VGS=0V,IDS=250uA
VDS=650V,VGS=0V
BVDSS
Drain-Source Breakdown Voltage
650
-
-
1
V
μA
μA
V
-
-
-
-
IDSS
Drain-to-Source Leakage Current
TJ=55°C
5
VDS=VGS, IDS=250μA
VGS=±30V,VDS=0V
VGS=10V,IDS=10A
VGS(th)
IGSS
Gate Threshold Voltage
2.0
-
3.3
-
4.0
±100
0.2
Gate-Source Leakage Current
nA
Ω
RDS(ON)**** Drain-Source On-State Resistance
-
0.16
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HY65R201P/B/MF/W
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=10A,VGS=0V
-
-
-
0.8
380
5.3
1.3
V
VSD****
trr
-
-
ns
μC
ISD=10A,dISD/dt=100A/μs
Qrr
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
HY65R201
Typ.
Symbol
Parameter
Test Conditions
Unit
Min
Max
Dynamic Characteristics
Ciss
Coss
Crss
td(ON)
Tr
Input Capacitance
-
-
-
-
-
-
-
1433
925
3.9
11
-
-
-
-
-
-
-
VGS=0V,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
VDS=50V,
pF
ns
Frequency=1.0MHz
6
VDD=380V,RG=4Ω,
IDS=11A,VGS=10V
td(OFF)
Tf
Turn-off Delay Time
Turn-off Fall Time
61
4.5
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
-
-
-
24
5.6
-
-
-
VDS =520V, VGS=10V，
nC
Gate-Source Charge
Gate-Drain Charge
ID=10A,
10.1
Note:
*
**
Repetitive rating；pulse width limited by max. junction temperature.
Limited by TJmax , starting TJ=25°C , L = 10.8mH, RG= 25Ω, VGS =10V
*** Surface mounted on FR-4 board.
**** Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%
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HY65R201P/B/MF/W
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Power Dissipation
TO-220,TO-263,TO-247
TO-220MF
Tc-Case Temperature(℃)
Tc-Case Temperature(℃)
Figure 3: Safe Operation Area
Figure 4: Safe Operation Area
TO-220,TO-263,TO-247
TO-220MF
VDS-Drain-Source Voltage(V)
VDS-Drain-Source Voltage(V)
Figure 5: Thermal Transient Impedance
Figure 6: Thermal Transient Impedance
TO-220,TO-263,TO-247
TO-220MF
Tj-Junction Temperature (℃)
Tj-Junction Temperature (℃)
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HY65R201P/B/MF/W
Figure 7: Output Characteristics
Figure 8: Drain-Source On Resistance
VDS-Drain-Source Voltage (V)
ID-Drain Current(A)
Figure 9: Drain Current
Tc-Case Temperature(℃)
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HY65R201P/B/MF/W
Typical Operating Characteristics(Cont.)
Figure 10 : On-Resistance vs. Temperature
Figure 11 : Source-Drain Diode Forward
Tj-Junction Temperature (℃)
VSD-Source-Drain Voltage(V)
Figure 12 : Capacitance Characteristics
Figure 13 : Gate Charge Characteristics
VDS-Drain-Source Voltage (V)
QG-Gate Charge (nC)
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HY65R201P/B/MF/W
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
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HY65R201P/B/MF/W
Package Information
TO-220FB-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
4.37
1.25
2.20
0.70
1.17
0.40
15.10
8.80
5.50
9.70
7.00
NOM
4.57
MAX
4.77
1.45
2.60
0.95
1.47
0.65
16.10
9.40
-
A
A1
A2
b
1.30
2.40
0.80
b2
c
1.27
0.50
D
15.60
9.10
D1
D2
E
-
10.00
-
10.30
-
E3
e
2.54 BSC
5.08 BSC
6.50
e1
H1
L
6.25
12.75
-
6.85
13.50
3.10
13.80
3.40
3.80
3.00
L1
ΦP
Q
3.40
2.60
3.60
2.80
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V1.0
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HY65R201P/B/MF/W
TO-263-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
4.37
1.22
2.49
0
NOM
4.57
1.27
2.69
0.13
0.81
1.27
0.38
8.7
MAX
4.77
1.42
2.89
0.25
0.96
1.47
0.53
8.9
A
A1
A2
A3
b
0.7
b1
c
1.17
0.3
D1
D4
E
8.5
6.6
-
-
9.86
7.06
10.16
-
10.36
-
E5
e
2.54 BSC
15.1
1.27
2.3
H
14.7
15.5
1.47
2.6
H2
L
1.07
2
L1
L4
θ
1.4
1.55
0.25 BSC
5°
1.7
0°
9°
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HY65R201P/B/MF/W
TO-220MF-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
9.96
4.50
2.34
0.30
2.56
0.40
1.20
15.57
NOM
10.16
4.70
MAX
10.36
4.90
2.74
0.60
2.96
0.65
1.35
16.17
E
A
A1
A2
A4
c
2.54
0.45
2.76
0.50
c1
D
1.30
15.87
6.70REF
2.54BSC
H1
e
L
12.68
12.98
13.28
L1
ΦP
ΦP3
F3
G3
b1
b2
2.93
3.03
3.15
3.15
1.25
1.18
0.70
3.03
3.18
3.45
3.30
1.35
1.28
0.80
3.13
3.38
3.65
3.45
1.55
1.43
0.95
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V1.0
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HY65R201P/B/MF/W
TO-247-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
4.80
2.21
1.85
1.11
1.91
2.91
0.51
20.70
16.25
15.50
13.00
4.80
2.30
NOM
5.00
MAX
5.20
2.61
2.15
1.36
2.21
3.21
0.75
21.30
16.85
16.10
13.60
5.20
2.70
A
A1
A2
b
2.41
2.00
1.21
b2
b4
c
2.01
3.01
0.61
D
21.00
16.55
15.80
13.30
5.00
D1
E
E1
E2
E3
e
2.50
5.44BSC
L
19.62
19.92
20.22
L1
ΦP
ΦP1
S
-
3.40
-
-
3.60
-
4.30
3.80
7.30
6.15BSC
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HY65R201P/B/MF/W
Device Per Unit
Package Type
TO-220FB-3L
TO-220MF-3L
TO-263-2L
Unit
Tube
Tube
Tube
Tube
Quantity
50
50
50
30
TO-247-3L
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (Ts min
)
Temperature max (Ts max
)
60-120 seconds
60-120 seconds
Time (Ts min to Ts max) (t
Average ramp-up rate
s)
3 °C/second max.
3°C/second max.
(Ts maxto T )
P
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1 See Classification Temp in table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to Ts max
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
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p
) is defined as a supplier minimum and a user maximum.
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HY65R201P/B/MF/W
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
＜2.5 mm
≥2.5 mm
Volume mm³
<350
Volume mm³
≥350
235 °C
220 °C
220 °C
220 °C
Table 2.Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm³
<350
Volume mm³
350-2000
260 °C
Volume mm³
≥2000
260 °C
260 °C
1.6 mm – 2.5 mm
≥2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
HTRB
PCT
168 Hrs/500 Hrs/1000Hrs, Bias @ 150°C
96 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Technical Support: Technology@hymexa.com
Xi'an Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
Web net: www.hymexa.com
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