HY70R751U [HUAYI]
N-Channel Super Junction Power MOSFET;
| 型号： | HY70R751U |
| 厂家： | 
HUAYI MICROELECTRONICS CO.,LTD. |
| 描述： | N-Channel Super Junction Power MOSFET |
| 文件： | 总12页 (文件大小：1598K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY70R751P/B/D/U
N-Channel Super Junction Power MOSFET
Feature Description
Pin Description
700V/7A
RDS(ON)= 0.69Ω(typ.)@VGS = 10V
100% avalanche tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
TO-220FB-3L
TO-263-2L
TO-252-2L
TO-251-3L
Applications
PFC Power Supply Stages
Switching Applications
Motor Control
N-Channel MOSFET
DC—DC Converters
Ordering and Marking Information
Package Code
P: TO-220FB-3L
D: TO-252-2L
P
B
B: TO-263-2L
U: TO-251-3L
HY70R751
YYXXXJWW G
HY70R751
YYXXXJWW G
D
U
Date Code
YYXXX WW
Assembly Material
G: Halogen Free
HY70R751
YYXXXJWW G
HY70R751
YYXXXJWW G
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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V1.0
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HY70R751P/B/D/U
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
700
±30
V
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Source Current-Continuous(Body Diode)
150
°C
°C
A
TSTG
IS
-55 to 150
7
Tc=25°C
Mounted on Large Heat Sink
Tc=25°C
Tc=25°C
Tc=100°C
Tc=25°C
Tc=100°C
26
7
A
A
IDM
Pulsed Drain Current *
ID
Continuous Drain Current
4.4
45
A
W
PD
Maximum Power Dissipation
18
W
RJC
RJA
RJA
EAS
Thermal Resistance, Junction-to-Case
Junction-to-Ambient**
2.8
62.5
110
254
°C/W
°C/W
°C/W
mJ
TO-220 , TO-263
TO-251 , TO-252
L=50mH
Junction-to-Ambient
Single Pulsed-Avalanche Energy ***
Note:
*
**
Repetitive rating；pulse width limited by max. junction temperature.
Surface mounted on FR-4 board.
***
Limited by TJmax , starting TJ=25°C , L = 50mH, RG= 25Ω, VGS =10V.
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
HY70R751
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Static Characteristics
VGS=0V,IDS=250μA
BVDSS
Drain-Source Breakdown Voltage
700
-
-
1
V
μA
μA
V
VDS=700V,VGS=0V
-
-
-
-
IDSS
Drain-to-Source Leakage Current
TJ=55°C
5
VDS=VGS, IDS=250μA
VGS=±30V,VDS=0V
VGS=10V,IDS=3.5A
VGS(th)
IGSS
Gate Threshold Voltage
2
-
3.3
-
4
Gate-Source Leakage Current
Drain-Source On-state Resistance
±100
0.75
nA
Ω
RDS(ON)*
-
0.69
Diode Characteristics
Diode Forward Voltage
ISD=3.5A,VGS=0V
-
-
-
0.9
212
1.7
1.3
V
VSD*
trr
Reverse Recovery Time
Reverse Recovery Charge
-
-
ns
μC
ISD=3.5A,dISD/dt=100A/μs
Qrr
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V1.0
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HY70R751P/B/D/U
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
HY70R751
Typ.
Symbol
Parameter
Test Conditions
Unit
Min
Max
Dynamic Characteristics
R
G
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
5.3
459
33.8
1.44
17
Ω
Ciss
Coss
Crss
td(ON)
Tr
Input Capacitance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VGS=0V,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDS=50V,
pF
Frequency=1.0MHz
10.1
28.9
23.6
VDD=350V,RG=25Ω,
ns
IDS=4A,VGS=10V
td(OFF)
Tf
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
-
-
-
9.2
2.4
3.5
-
-
-
VDS =350V, VGS=10V，
nC
Gate-Source Charge
Gate-Drain Charge
ID=4A
Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%
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V1.0
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HY70R751P/B/D/U
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Tc-Case Temperature(℃)
Tc-Case Temperature(℃)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
VDS-Drain-Source Voltage(V)
Tj-Junction Temperature (℃)
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
VDS-Drain-Source Voltage (V)
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ID-Drain Current(A)
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HY70R751P/B/D/U
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Tj-Junction Temperature (℃)
VSD-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
104
103
Ciss
102
Coss
101
100
Crss
10-1
0
20
40
60
80
100
VDS-Drain-Source Voltage (V)
QG-Gate Charge (nC)
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V1.0
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HY70R751P/B/D/U
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Gate Charge Test Circuit and Waveforms
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V1.0
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HY70R751P/B/D/U
Device Per Unit
Package Type
Unit
Quantity
TO-220FB-3L
Tube
50
Package Information
TO-220FB-3L
COMMON DIMENSIONS
mm
NOM
4.57
SYMBOL
MIN
4.37
1.25
2.20
0.70
1.17
0.40
15.10
8.80
5.50
9.70
7.00
MAX
4.77
1.45
2.60
0.95
1.47
0.65
16.10
9.40
-
A
A1
A2
b
1.30
2.40
0.80
b2
c
1.27
0.50
D
15.60
9.10
D1
D2
E
-
10.00
-
10.30
-
E3
e
2.54 BSC
5.08 BSC
6.50
e1
H1
L
6.25
12.75
-
6.85
13.80
3.40
3.80
3.00
13.50
3.10
L1
ΦP
Q
3.40
2.60
3.60
2.80
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V1.0
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HY70R751P/B/D/U
Device Per Unit
Package Type
Unit
Quantity
TO-263-2L
Reel
50
Package Information
TO-263-2L
COMMON DIMENSIONS
mm
NOM
4.57
1.27
2.69
0.13
0.81
1.27
0.38
8.7
SYMBOL
MIN
4.37
1.22
2.49
0
MAX
4.77
1.42
2.89
0.25
0.96
1.47
0.53
8.9
A
A1
A2
A3
b
0.7
b1
c
1.17
0.3
D1
D4
E
8.5
6.6
-
-
9.86
7.06
10.16
-
10.36
-
E5
e
2.54 BSC
15.1
1.27
2.3
H
14.7
1.07
2
15.5
1.47
2.6
H2
L
L1
L4
θ
1.4
1.55
0.25 BSC
5°
1.7
0°
9°
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V1.0
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HY70R751P/B/D/U
Device Per Unit
Package Type
Unit
Quantity
TO-252-2L
Tube
75
Package Information
TO-252-2L
COMMON DIMENSIONS
mm
NOM
2.30
-
SYMBOL
MIN
2.20
0.00
0.97
0.68
5.20
0.43
5.98
MAX
2.40
0.20
1.17
0.90
5.50
0.63
6.22
A
A1
A2
b
1.07
0.78
5.33
0.53
6.10
5.30REF
6.60
-
b3
c
D
D1
E
6.40
4.63
6.80
-
E1
e
2.286BSC
10.10
1.50
2.90REF
0.51BSC
-
H
9.40
1.38
10.50
1.75
L
L1
L2
L3
L4
L5
θ
0.88
-
1.28
1.00
1.95
8°
-
1.65
0°
1.80
-
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V1.0
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HY70R751P/B/D/U
Device Per Unit
Package Type
Unit
Quantity
TO-251-3L
Tube
75
Package Information
TO-251-3L
COMMON DIMENSIONS
mm
NOM
2.30
SYMBOL
MIN
2.20
0.97
0.68
0.00
0.00
5.20
0.43
5.98
MAX
2.40
1.17
0.90
0.10
0.10
5.50
0.63
6.22
A
A2
b
1.07
0.78
b2
b2'
b3
c
0.04
0.04
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
-
E1
e
-
2.286BSC
16.52
9.40
H
16.22
9.15
0.88
1.65
16.82
9.65
1.28
1.95
L1
L3
L5
1.02
1.80
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V1.0
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HY70R751P/B/D/U
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (Tsmin
)
Temperature max (Tsmax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
Average ramp-up rate
s
)
3 °C/second max.
3°C/second max.
(Tsmax to T )
P
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1 See Classification Temp in table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to Tsmax
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
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p
) is defined as a supplier minimum and a user maximum.
V1.0
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HY70R751P/B/D/U
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
＜2.5 mm
≥2.5 mm
Volume mm³
<350
Volume mm³
≥350
235 °C
220 °C
220 °C
220 °C
Table 2.Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm³
<350
Volume mm³
350-2000
260 °C
Volume mm³
≥2000
260 °C
260 °C
1.6 mm – 2.5 mm
≥2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
HTRB
PCT
168 Hrs/500 Hrs/1000Hrs, Bias @ 150°C
96 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Technical Support: Technology@hymexa.com
Xi'an Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
Web net: www.hymexa.com
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