HNS625 [HUTSON]
Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-218;
| 型号： | HNS625 |
| 厂家： | 
HUTSON INDUSTRIES, INC. |
| 描述： | Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-218 |
| 文件： | 总1页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAXIMUM RATINGS
SYMBOL VDRM
DEVICE NUMBERS
UNITS
50
100
200
400
600
HNS025 HNS040
HNS055
HNS155
HNS255
HNS455
HNS655
HNS070
HNS170
HNS270
HNS470
HNS670
HNS125 HNS140
HNS225 HNS240
HNS425 HNS440
HNS625 HNS640
Repetitive Peak Off-State Voltage (1)
Gate open, and Tj = 110° C
VDRM
VOLT
RMS On-State Current at TC = 80 ° C
and Conduction Angle of 360°
Peak Surge (Non-Repetitive) On-State
Current, One-Cycle, at 50Hz or 60 Hz
It(RMS)
ITSM
25
40
55
70
AMP
AMP
250
400
550
700
Peak Gate-Trigger Current for 3µsec. Max.
Peak Gate-Power Dissipation at IGT < IGTM
Average Gate-Power Dissipation
IGTM
PGM
5
5
5
5
AMP
WATT
WATT
°C
20
0.5
20
0.5
20
0.5
20
0.5
PG(AV)
Tstg
Storage Temperature Range
-40 to +150
-40 to +110
Operating Temperature Range, Tj
Toper
°C
ELECTRICAL CHARACTERISTICS
At Specified Case Temperatures
Peak Off-State Current, Gate Open
TC = 110° C VDRM &VRRM = Max. Rating
Maximum On-State Voltage, (PEAK) at
TC=25°C, and IT = Rated Amps
DC Holding Current, Gate Open
and TC = 25°C
Critical Rate-Of-Rise of Off-State Voltage,
Gate Open, TC = 110°C
DC Gate – Trigger Current for Anode Voltage
= 12VDC, RL = 60W and at TC = 25° C
DC Gate-Trigger Voltage for Anode Voltage =
12VDC, RL = 60W and at TC = 25°C
Gate-Controlled Turn-on Time for
t D + t R, IGT = 150mA and TC = 25°C
mA
MAX.
VOLT
MAX
mA
IDRM
VTM
IHO
0.5
1.6
100
200
40
0.5
0.5
1.8
100
200
40
0.5
1.8
100
200
50
1.8
100
200
40
MAX.
Critical
dv/dt
V/µsec.
mA
MAX.
VOLT
MAX
IGT
VGT
Tgt
2
2
2
2
2.5
2.5
2.5
2.5
µsec.
°C/WATT
TYP
Thermal Resistance, Junction-to-Case
1.0
0.91
1.1
0.9
RqJ-C
Note: Add “E” Suffix for Eyelet Leads
SOLID STATE CONTROL DEVICES
38
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