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S106B2 [HUTSON]

Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-202, 3 PIN;

S106B2


元器件型号：	S106B2
生产厂家：	HUTSON INDUSTRIES, INC.
描述和应用：	Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-202, 3 PIN 栅栅极
PDF文件：	总2页 (文件大小：130K)
下载文档：	下载PDF数据表文档文件
型号参数：S106B2参数

S106D

High Precision Foil Resistor with TCR of ± 2.0 ppm/°C, Tolerance of ± 0.005 % and Load Life Stability of ± 0.005 %

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49 VISHAY

S106D1

Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-202

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0 HUTSON

S106D1

Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-202

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0 HUTSON

S106D2

Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-202, 3 PIN

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0 HUTSON

S106F1

Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element, TO-202

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3 HUTSON

S106F1

Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element, TO-202

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0 HUTSON

S106F2

Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element, TO-202, 3 PIN

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0 HUTSON

S106K

High Precision Foil Resistor with TCR of ± 2.0 ppm/°C, Tolerance of ± 0.005 % and Load Life Stability of ± 0.005 %

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22 VISHAY

S106M2

Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-202, 3 PIN

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0 HUTSON

S106-X

1 Form A Solid State Relay

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35 SSOUSA

S107

1 Form A Solid State Relay

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58 SSOUSA

S1070W

SCRs 1-70 AMPS NON-SENSITIVE GATE

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35 TECCOR

S10747-0909

Enhanced near-infrared sensitivity by using fully-depleted CCD technology

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23 HAMAMATSU

S10747-0909_15

CCD area image sensor

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0 HAMAMATSU

S1075

T1/CEPT/ISDN-PRI TRANSFORMERS

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11 BOTHHAND

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