2CL2FJ_17 [HVGT]
High Voltage Silicon Rectifier Diode;
| 型号： | 2CL2FJ_17 |
| 厂家： | 
GETAI ELECTRONIC DEVICE CO.,LTD |
| 描述： | High Voltage Silicon Rectifier Diode |
| 文件： | 总2页 (文件大小：515K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2CL2FH
60mA 12kV 150nS
High Voltage Silicon Rectifier Diode
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INTRODUCE:
SHAPE DISPLAY:
HVGT high voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. High reliability design.
2. Small volume.
3. High frequency.
4. Conform to RoHS and SGS.
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
SIZE: (Unit:mm)
HVGT NAME: DO-415
APPLICATIONS:
1. High voltage multiplier circuit
2. Electrostatic generator circuit .
3. General purpose high voltage rectifier.
4. Negative ion generator.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 0.65 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
VRRM
Condition
Data Value Units
Repetitive Peak Renerse Voltage
Non-Repetitive Peak Renerse Voltage
TA=25°C
12
--
kV
kV
mA
mA
A
VRSM
TA=25°C
TA=40°C
60
Average Forward Current Maximum
IFAVM
TOIL=55°C
120
Non-Repetitive Forward Surge Current
Junction Temperature
IFSM
TJ
TA=25°C; 50Hz Half-Sine Wave; 8.3mS
10
125
°C
Allowable Operation Case Temperature
Storage Temperature
Tc
-40~+125
-40~+125
°C
TSTG
°C
ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified)
Items
Symbols
Condition
at 25°C; at IFAVM
at 25°C; at VRRM
Data value Units
Maximum Forward Voltage Drop
VFM
20
2.0
50
V
IR1
IR2
TRR
CJ
uA
uA
nS
pF
Maximum Reverse Current
at 100°C ; at VRRM
at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR
at 25°C; VR=0V; f=1MHz
Maximum Reverse Recovery Time
Junction Capacitance
150
2.3
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-10 1 / 2
2CL2FH
60mA 12kV 150nS
High Voltage Silicon Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- -------
Fig 1
Fig 2
Forward Current Derating Curve
Reverse Recovery Measurement Waveform
Typical data capture points: IF =0.5IR , IR,IRR =0.25IR
IR is typically the rated average forward current maximum
(IFAVM) of the D.U.T
Fig 3
Non-Repetitive Surge Current
Cycles (50Hz)
Type
Code
Cathode Mark
Marking
2CL2FH
HVGT
2CL2FH
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-10 2 / 2
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