2CL500_17 [HVGT]
Ultra-Fast Recovery High Voltage Silicon Rectifier Diodes;
| 型号： | 2CL500_17 |
| 厂家： | 
GETAI ELECTRONIC DEVICE CO.,LTD |
| 描述： | Ultra-Fast Recovery High Voltage Silicon Rectifier Diodes |
| 文件： | 总2页 (文件大小：516K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2CL500/8
500mA 8.0kV 50nS
Ultra-Fast Recovery High Voltage Silicon Rectifier Diodes
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INTRODUCE:
SHAPE DISPLAY:
HVGT high voltage silicon rectifier diodes is made
of high quality glass passivated chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. High reliability design.
2. High voltage design.
3. High frequency, Fast recovery.
4. Conform to RoHS and SGS.
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
SIZE: (Unit:mm)
HVGT NAME: DO-722
APPLICATIONS:
1. High voltage multiplier circuit
2. Electrostatic generator circuit .
3. General purpose high voltage rectifier.
4. Laser power supply medical equipment.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 2.55 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
VRRM
Condition
Data Value Units
Repetitive Peak Renerse Voltage
Non-Repetitive Peak Renerse Voltage
TA=25°C
8.0
kV
kV
mA
mA
A
VRSM
TA=25°C
TA=55°C
--
500
Average Forward Current Maximum
IFAVM
TOIL=55°C
--
Non-Repetitive Forward Surge Current
Junction Temperature
IFSM
TJ
TA=25°C; 60Hz Half-Sine Wave; 8.3mS
20
150
°C
Allowable Operation Case Temperature
Storage Temperature
Tc
-40~+150
-40~+150
°C
TSTG
°C
ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified)
Items
Symbols
Condition
at 25°C; at IFAVM
at 25°C; at VRRM
Data value Units
Maximum Forward Voltage Drop
VFM
15
0.5
50
50
7.5
V
IR1
IR2
TRR
CJ
uA
uA
nS
pF
Maximum Reverse Current
at 125°C ; at VRRM
at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR
at 25°C; VR=0V; f=1MHz
Maximum Reverse Recovery Time
Junction Capacitance
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-10 1 / 2
2CL500/8
500mA 8.0kV 50nS
Ultra-Fast Recovery High Voltage Silicon Rectifier Diodes
----------------------------------------------------------------------------------------------------------------------------- -------
Fig 1
Fig 2
Forward Current Derating Curve
Reverse Recovery Measurement Waveform
Typical data capture points: IF =0.5IR , IR,IRR =0.25IR
IR is typically the rated average forward current maximum
(IFAVM) of the D.U.T
Fig 3
Non-Repetitive Surge Current
Cycles (60Hz)
Type
Code
Cathode Mark
Marking
2CL500/8
HVGT
2CL500/8
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-10 2 / 2
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