BR2F [HVGT]
2.0kV 1.0A HIGH VOLTAGE DIODES; 2.0KV 1.0A高压二极管
| 型号： | BR2F |
| 厂家： | 
GETAI ELECTRONIC DEVICE CO.,LTD |
| 描述： | 2.0kV 1.0A HIGH VOLTAGE DIODES |
| 文件： | 总1页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
HVCA
BR2F
2.0kV 1.0A HIGH VOLTAGE DIODES
Outline Drawings : mm
is high reliability resin molded type high voltage
BR2F
diode in small size package which is sealed a multilayed
Cathode Mark
o 5.0
Lot No.
mesa type silicon chip by epoxy resin.
o 1.28
Features
High speed switching
High Current
27 min.
9.0
27 min.
High surge resisitivity for CRT discharge
High reliability design
High Voltage
Cathode Mark
Applications
X light Power supply
Laser
Type
Mark
Voltage doubler circuit
Microwave emission power
BR2F
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Symbols
VRRM
IO
Items
Condition
BR2F
2.0
Units
kV
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
peak
A
1.0
Ta=25°C,Resistive Load
IFSM
40
peak
A
155
j
Junction Temperature
T
°C
°C
°C
125
Allowable Operation Case Temperature
Storage Temperature
Tc
Tstg
-40 to +155
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
VF
BR2F
9.0
Conditions
Units
Maximum Forward Voltage Drop
Maximum Reverse Current
V
at 25°C,IF =IF(AV)
at 25°C,VR =VRRM
IR1
uA
5.0
50
IR2
R
at 100°C,V
uA
nS
RRM
=V
Maximum Reverse Recovery Time
Junction Capacitance
Trr
at 25°C
150
--
Cj
at 25°C,VR=0V,f=1MHz
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com E-mail:sales@getedz.com
2012
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