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HV-T73 5mA 12kV 80nS-HIGH VOLTAGE DIODES
Part No.:   HV-T73
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Description:   5mA 12kV 80nS-HIGH VOLTAGE DIODES
File Size :   346 K    
Page : 2 Pages
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Maker   HVGT [ GETAI ELECTRONIC DEVICE CO.,LTD ]http://www.hvgtsemi.com
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  HV-T73 Datasheet PDF page 2  
HV-T73 : 5mA 12kV 80nS-HIGH VOLTAGE DIODES
100%
HV-T73
5mA 12kV 80nS-HIGH VOLTAGE DIODE
High reliability resin molded type high voltage diode
in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Outline Drawings :
Features
High speed switching
Epoxy resin molded in vacuum,
Have anticorrosion in the surface
High surge resisitivity for CRT discharge
High reliability design
Avalanche characteristic
Applications
X light Power supply
Laser
Voltage doubler circuit
Microwave emission power
General purpose high voltage rectifier,
Voltage multiplier assembly.
DO-210 Series
Lead Diameter 0.6mm
2.5mm
26mm
10mm
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
Junction Temperature
Allowable Operation Case Temperature
Storage Temperature
Symbols
V
RRM
I
O
I
FSM
T
j
Tc
T
stg
Ta=25°C,
Ta=25°C,Resistive Load
Ta=25°C,8.3 ms
Condition
T7
3
HV-T73
12
5.0
0.5
125
125
-40 to +125
Units
kV
mA
A
peak
°C
°C
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Maximum Forward Voltage Drop
Maximum Reverse Current
Symbols
V
F
IR
1
IR
2
Maximum Reverse Recovery Time
Junction Capacitance
GETE ELECTRONIC CO.,LTD
GUANGZHOU * CHINA
Conditions
at 25°C,I
F
=I
F(AV)
at 25°C,V
R
=V
RRM
at 100°C,V
R
=V
RRM
at 25°C; I
F
=2mA;
I
R
=4mA;
I
rr
=1mA;
HV-T73
45
2.0
5.0
80
1.0
Units
V
uA
uA
nS
pF
Trr
Cj
at 25°C; V
R
=0V,f=1MHz
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n
n
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