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HVV1012-060 [HVVI]

L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Apllications; L波段航空电子脉冲功率晶体管1025-1150MHz ， 10μs的脉冲， 1 ％关税为DME和TCAS Apllications

HVV1012-060


元器件型号：	HVV1012-060
生产厂家：	HVVI SEMICONDUCTORS, INC.
描述和应用：	L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Apllications L波段航空电子脉冲功率晶体管1025-1150MHz ， 10μs的脉冲， 1 ％关税为DME和TCAS Apllications 晶体晶体管脉冲电子航空
PDF文件：	总2页 (文件大小：743K)
下载文档：	下载PDF数据表文档文件
型号参数：HVV1012-060参数

HVV1012-100

L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications

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42 HVVI

HVV1012-250

L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications

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41 HVVI

HVV1012-250-EK

L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications

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16 HVVI

HVV1012-550

Excellent Thermal Stability

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1 ASI

HVV1012-550-EK

Excellent Thermal Stability

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1 ASI

HVV1214-025

L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications

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42 HVVI

HVV1214-025S

L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty

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18 HVVI

HVV1214-075

L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications

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31 HVVI

HVV1214-100

L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications

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26 HVVI

HVV1214-100-EK

L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications

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27 HVVI

HVV1214-140

All Gold Bonding Scheme

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1 ASI

HVV1214-140-EK

All Gold Bonding Scheme

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1 ASI

HVW

Metal Alloy Resistors, Special Purpose, High Voltage

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20 VISHAY

HVW0011K000JBJ

Metal Alloy Resistors, Special Purpose, High Voltage

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16 VISHAY

HVW0011K000JEE

Metal Alloy Resistors, Special Purpose, High Voltage

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7 VISHAY

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