HWC27NC [HW]
C-Band Power FET Non-Via Hole Chip; C波段功率FET非导通孔芯片
| 型号： | HWC27NC |
| 厂家： | 
HEXAWAVE, INC |
| 描述： | C-Band Power FET Non-Via Hole Chip |
| 文件： | 总2页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HWC27NC
C-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
Features
Outline Dimensions
Low Cost GaAs Power FET
•
•
•
•
650
435
215
0.0
Class A or Class AB Operation
11 dB Typical Gain at 4 GHz
5V to 10V Operation
Source
1
3
Description
The HWC27NC is a medium power GaAs FET
designed for various L-band
applications.
&
S-band
2
4
Absolute Maximum Ratings
Source
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current
+15V
-5V
IDSS
2mA
0.0 58.5
344.5 400
IG
Gate Current
TCH
Channel Temperature
175 C
°
Unit: µm
Thickness: 100
Chip size 50
Bond Pads 1-2 (Gate):
Bond Pads 3-4 (Drain):
5
TSTG Storage Temperature
-65 to +175 C
°
*
PT
Power Dissipation
3.5W
60 x 60
60 x 60
* mounted on an infinite heat sink
Electrical Specifications
(TA=25 C) f = 4 GHz for all RF Tests
°
Symbol
Parameters & Conditions
Saturated Current at VDS=3V, VGS=0V
Units
Min.
Typ.
Max.
IDSS
mA
V
300
400
600
VP
Pinch-off Voltage at VDS=3V, ID=20mA
Transconductance at VDS=3V, ID=200mA
-3.5
-
-2.0
250
28
-1.5
g
m
mS
dBm
dB
-
-
-
-
P1dB
G1dB
PAE
Power Output at Test Points
VDS=10V, ID=0.5 IDSS
27
9
Gain at 1dB Compression Point
VDS=10V, ID=0.5 IDSS
10
Power-Added Efficiency (POUT = P1dB
VDS=10V, ID=0.5 IDSS
)
%
30
40
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWC27NC
C-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
VDS=10V, IDS=0.5IDSS
(GHz)
lS11l
ANG
lS21l
ANG
lS12l
ANG
lS22l
ANG
∠
∠
∠
∠
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
0.845
0.839
0.839
0.837
0.834
0.832
0.828
0.827
0.827
0.827
0.829
0.827
0.830
0.828
0.827
0.827
0.825
-115.62
-126.96
-135.39
-141.73
-147.23
-151.60
-155.23
-158.30
-161.00
-163.08
-165.07
-167.18
-169.65
-171.56
-173.63
-175.28
-176.45
4.702
3.921
3.336
2.896
2.551
2.278
2.052
1.879
1.720
1.588
1.475
1.370
1.279
1.204
1.136
1.077
1.019
103.80
95.65
88.67
82.57
77.03
72.18
67.94
63.92
59.95
56.32
52.75
49.09
45.84
42.82
39.47
36.43
33.25
0.028
0.032
0.037
0.042
0.045
0.048
0.052
0.056
0.061
0.066
0.070
0.077
0.083
0.089
0.096
0.104
0.110
71.07
71.05
72.49
72.98
74.32
76.58
77.92
80.91
83.84
85.29
86.33
87.32
89.28
89.60
89.96
90.23
91.35
0.236
0.246
0.257
0.275
0.291
0.309
0.327
0.336
0.352
0.365
0.384
0.399
0.418
0.440
0.456
0.467
0.475
-49.89
-55.54
-62.80
-68.12
-73.17
-79.08
-82.34
-85.76
-89.00
-91.68
-94.59
-97.11
-100.45
-102.74
-105.73
-107.27
-111.08
Bonding Manner
Gate, drain pad: 1 wire on each pad
Source pad: 2 wires on each side
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
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