HY11P52B-L048 [HYCON]
8-Bit RISC-like Mixed Signal Microcontroller;
| 型号： | HY11P52B-L048 |
| 厂家： | 
HYCON Technology Corporation |
| 描述： | 8-Bit RISC-like Mixed Signal Microcontroller 微控制器 |
| 文件： | 总35页 (文件大小：736K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY11P52/HY11P52B
Datasheet
8-Bit RISC-like Mixed Signal Microcontroller
Embedded 4x12 LCD Driver
.
18-Bit Σ∆ADC
© 2011-2013 HYCON Technology Corp.
DS-HY11P52-V06_EN
Page1
www.hycontek.com
HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
Table of Contents
1.
2.
FEATURES ...............................................................................................................................................5
PIN DEFINITION ....................................................................................................................................... 6
3.
APPLICATION CIRCUIT.........................................................................................................................10
Bridge Sensor I (HY11P52)................................................................................................................. 10
Bridge Sensor II (HY11P52B) ............................................................................................................. 11
3.1.
3.2.
4.
FUNCTION OUTLINE.............................................................................................................................12
Internal Block Diagram........................................................................................................................ 12
Related Description and Supporting Documents................................................................................12
SD18 Network..................................................................................................................................... 13
4.1.
4.2.
4.3.
.
5.
6.
REGISTER LIST ..................................................................................................................................... 14
ELECTRICAL CHARACTERISTICS ...................................................................................................... 15
6.1Recommended Operating Conditions ........................................................................................................ 15
6.2Internal RC Oscillator .................................................................................................................................16
6.3Supply Current into VDD Excluding Peripherals Current........................................................................... 17
6.4 Port 1~2......................................................................................................................................................18
6.5 Reset (Brownout, External RST pin, Low Voltage Detect)......................................................................... 19
6.6 Power System............................................................................................................................................21
6.7 LCD ............................................................................................................................................................23
6.8 SD18, Power Supply and Recommended Operating Conditions .............................................................. 24
6.9Built-in EPROM (BIE) ................................................................................................................................. 28
6.10 Built-in EPROM (BIE)_Low Voltage Control Circuit (HY11P52) ..............................................................28
© 2011-2013 HYCON Technology Corp.
www.hycontek.com
DS-HY11P52-V06_EN
Page 2
HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
6.11
6.12
Built-in EPROM (BIE)_ Low Voltage Control Circuit (HY11P52B)......................................................28
PFM Control Circuit............................................................................................................................. 29
7.
ORDERING INFORMATION................................................................................................................... 30
8.
PACKAGE INFORMATION..................................................................................................................... 31
8.1.
LQFP48(L048) ....................................................................................................................................31
9.
APPENDIX A...........................................................................................................................................32
Difference of Simulator........................................................................................................................ 32
Difference of Current Consumption .................................................................................................... 32
Difference of VDDA Power Source ..................................................................................................... 32
Difference of ADC OSR....................................................................................................................... 33
9.1.
9.2.
9.3.
9.4.
9.5.
9.6.
9.7.
9.8.
.
Difference of 16Bits Look-up-table Instruction.................................................................................... 33
Difference of BIE, Low Programming Voltage Control Function......................................................... 33
Difference of PFM Control Circuit ....................................................................................................... 33
Fast ADC Output Configuration .......................................................................................................... 34
10.
REVISION RECORD .......................................................................................................................... 35
© 2011-2013 HYCON Technology Corp.
www.hycontek.com
DS-HY11P52-V06_EN
Page 3
HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
Attention：
1.
HYCON Technology Corp. reserves the right to change the content of this datasheet without further
notice. For most up-to-date information, please constantly visit our website:
http://www.hycontek.com .
2.
3.
HYCON Technology Corp. is not responsible for problems caused by figures or application circuits
narrated herein whose related industrial properties belong to third parties.
Specifications of any HYCON Technology Corp. products detailed or contained herein stipulate the
performance, characteristics, and functions of the specified products in the independent state. We
does not guarantee of the performance, characteristics, and functions of the specified products as
placed in the customer’s products or equipment. Constant and sufficient verification and evaluation
is highly advised.
4.
Please note the operating conditions of input voltage, output voltage and load current and ensure
the IC internal power consumption does not exceed that of package tolerance. HYCON Technology
Corp. assumes no responsibility for equipment failures that resulted from using products at values
that exceed, even momentarily, rated values listed in products specifications of HYCON products
specified herein.
5.
6.
Notwithstanding this product has built-in ESD protection circuit, please do not exert excessive static
electricity to protection circuit.
.
Products specified or contained herein cannot be employed in applications which require extremely
high levels of reliability, such as device or equipment affecting the human body, health/medical
equipments, security systems, or any apparatus installed in aircrafts and other vehicles.
Despite the fact that HYCON Technology Corp. endeavors to enhance product quality as well as
reliability in every possible way, failure or malfunction of semiconductor products may happen.
Hence, users are strongly recommended to comply with safety design including redundancy and
fire-precaution equipments to prevent any accidents and fires that may follow.
7.
8.
Use of the information described herein for other purposes and/or reproduction or copying without
the permission of HYCON Technology Corp. is strictly prohibited.
© 2011-2013 HYCON Technology Corp.
www.hycontek.com
DS-HY11P52-V06_EN
Page 4
HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
1. Features
8-bit RISC, 46 instructions included.
Operating voltage range: 2.2V to 3.6V,
operation temperature range: -40℃~85℃.
External Crystal Oscillator and Internal High
Precision RC Oscillator, 6 CPU clock rates
enable users to have the most power-saving
plan.
1.0V internal analog circuit common ground
that equips with Push-Pull drive ability to
provide sensor driving voltage.
LVD low voltage detection function has 14
steps of voltage detection configuration and
external input voltage detection function
Analog voltage source, VDDA equips with
10mA low dropout regulator function, fast start
function.
Active Mode 300uA@2MHz
Standby Mode 3uA@28KHz
Sleep Mode 1uA
4x12 LCD Drive
1/4 Duty、1/3 Bias
2K Word OTP (One Time Programmable) Type
Program Memory, 128 Byte Data Memory
Brownout detector and Watch dog Timer,
prevents CPU from Crash.
Built-in Charge Pump regulated circuit,
providing 4 LCD Bias voltage
8-bit Timer A
18-bit fully differential input Sigma-Delta
Analog-to-Digital Converter (A/D)
Built-In EPROM (BIE), 3.05V low voltage
programming control circuit (HY11P52); 2.75V
low voltage programming control circuit
(HY11P52B).
Built-in PGA (Programmable Gain
Amplifier) 1/4x、1/2x、1x. …128x，10 input
signal gain selection
.
PFM control circuit
Built-in Input zero point adjustment can
increase measurement range according
to different application.
Support 6 stack level
Diverse data output rate. Max. 1.95KSPS
© 2011-2013 HYCON Technology Corp.
www.hycontek.com
DS-HY11P52-V06_EN
Page 5
HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
2. Pin Definition
2.1. Pin Diagram LQFP48
36 35 34 33 32 31 30 29 28 27 26 25
SEG2
SEG3
SEG4
SEG5
SEG6
SEG7
SEG8
SEG9
SEG10
SEG11
SEG12
SEG13
NC
NC
VDDA
ACM
AI0
HY11P52/
HY11P52B
AI1
AI2
LQFP48
NC
.
NC
NC
VSS
NC
1
2
3
4
5
6
7
8
9
1 0 1 1 1 2
Figure 2-1 HY11P52/HY11P52B LQFP48 Pin Diagram
Note 1：VPP and RST use the same pin. Input voltage cannot exceed 5.8V when not programming EPROM.
Note 2：TST and PT1.3 use the same pin. Input voltage cannot exceed Vdd+0.3V while operating.
Note 3：If PT1.3 is not configured as external pin button, it can help to enhance the anti-interference ability.
© 2011-2013 HYCON Technology Corp.
www.hycontek.com
DS-HY11P52-V06_EN
Page 6
HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
2.2. I/O Description
“I/O” input/output, “I” input, “O” output, “S” Smith Trigger, “C” CMOS features compatible input/output, “P” power supply, “A” analog channel
Pin
NO.
1
Pin Name
Characteristic
Type Buffer
Description
Unused
NC
-
-
RST/VPP
2
RST
VPP
I
S
P
Reset IC
P
EPROM read/write voltage source
PT1.0/INT0/PSCK
PT1.1/INT1/PSDI
PT1.2/LVDIN/FB
PT1.0
INT0
I
I
I
S
S
S
Digital input
3
Interrupt input INT0
SCK port of OTP read/write
PSCK
PT1.1
INT1
PSDI
I
I
I
S
S
S
Digital input
4
5
Interrupt input INT1
SDI port of OTP read/write
PT1.2
LVDIN
FB
I
S
A
A
Digital input
.
A
A
LVD external signal input port
Feedback control port of back light
constant current
PT1.3/TST
6
7
8
PT1.3
TST
I
I
S
S
S
Digital input
Test Mode input pin (invalid)
Digital I/O
PT1.4
I/O
PT1.5/PSDO
PT1.5
PSDO
I/O
O
S
C
Digital I/O
SDO port of OTP read/write
PT1.6/FS
PT1.7/BZ
PT1.6
FS
I/O
O
S
C
Digital I/O
9
Output port of back light constant
current control
10
PT1.7
BZ
I/O
O
-
S
C
-
Digital I/O
Buzzer output
Unused
11
12
NC
NC
-
-
Unused
© 2011-2013 HYCON Technology Corp.
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DS-HY11P52-V06_EN
Page 7
HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
SEG13
SEG12
SEG11
SEG10
SEG9
SEG8
SEG7
SEG6
SEG5
SEG4
SEG3
SEG2
COM3
COM2
COM1
COM0
VLCD
VDD
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
P
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
P
P
S
S
C
S
-
LCD Segment Output
LCD Segment Output
LCD Segment Output
LCD Segment Output
LCD Segment Output
LCD Segment Output
LCD Segment Output
LCD Segment Output
LCD Segment Output
LCD Segment Output
LCD Segment Output
LCD Segment Output
LCD COM Output
LCD COM Output
LCD COM Output
LCD COM Output
LCD voltage source
IC operation voltage source
Digital I/O
.
P
PT2.0
PT2.1
PT2.2
PT2.3
NC
I/O
I/O
I/O
I/O
-
Digital I/O
Digital I/O
Digital I/O
Unused
NC
-
-
Unused
NC
-
-
Unused
NC
-
-
Unused
VDDA
Regulator output, analog circuit
voltage souce
39
40
P
P
P
P
ACM
Internal analog circuit common
ground pin
41
42
43
44
45
46
47
AI0
AI1
AI2
NC
NC
NC
VSS
A
A
A
-
A
A
A
-
Analog input channel
Analog input channel
Analog input channel
Unused
-
-
Unused
-
-
Unused
P
P
IC operation voltage source ground
© 2011-2013 HYCON Technology Corp.
www.hycontek.com
DS-HY11P52-V06_EN
Page 8
HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
pin
48
NC
-
-
Unused
Table 2-1 Pin Definition and Function Description
.
© 2011-2013 HYCON Technology Corp.
www.hycontek.com
DS-HY11P52-V06_EN
Page 9
HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
3. Application Circuit
3.1. Bridge Sensor I (HY11P52)
Kg
Lb
1~4.7uF
VDD
1~10uF
36 35 34 33 32 31 30 29 28 27 26 25
SEG2
SEG3
SEG4
SEG5
SEG6
SEG7
SEG8
SEG9
SEG10
SEG11
SEG12
SEG13
NC
NC
VDDA
0.47uF~10uF
VDDA
ACM
AI0
AI2
22~100nF
D-
D+
SI+
0.1uF
0.1uF
ADC
SI-
AI1
VRH VRL
HY11P52
AI2
LQFP48
NC
NC
VDD
NC
100k
.
RST
PT1.7
VSS
NC
100nF
1
2
3
4
5
6
7
8
9
1 0 1 1 1 2
Figure 3-1 Bridge Sensor Application Circuit
Note 1：DCSET[2:0] can conduct bias adjustment of Load Cell zero point voltage address
© 2011-2013 HYCON Technology Corp.
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DS-HY11P52-V06_EN
Page 10
HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
3.2. Bridge Sensor II (HY11P52B)
Kg
Lb
1~4.7uF
VDD
1~10uF
36 35 34 33 32 31 30 29 28 27 26 25
SEG2
SEG3
SEG4
SEG5
SEG6
SEG7
SEG8
SEG9
SEG10
SEG11
SEG12
SEG13
NC
NC
VDDA
0.47uF~10uF
VDDA
ACM
AI0
AI2
22~100nF
D-
D+
SI+
0.1uF
0.1uF
ADC
SI-
AI1
VRH VRL
HY11P52B
AI2
LQFP48
NC
NC
VDD
NC
.
250K
RST
PT1.7
VSS
NC
100nF
1
2
3
4
5
6
7
8
9
1 0 1 1 1 2
Figure 3-1 Bridge Sensor Application Circuit
Note 1ĈDCSET[2:0] can conduct bias adjustment of Load Cell zero point voltage address.
Note 2ĈRST pin pull up resistor is enhanced by built-in 2.75V low programming voltage control function. The
resistor value of HY11P52B is 250KΩ.
© 2011-2013 HYCON Technology Corp.
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DS-HY11P52-V06_EN
Page 11
HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
4. Function Outline
4.1. Internal Block Diagram
VDD
VSS
PTn.x/BZ
PT1.2
PT1.6
C
P
P
C
A
Data
Memory
(STK：6L)
RC
Oscillator
(HAO)
PORT
(PT1、PT2)
(BZ)
TIMER
A
PFM
Control
(SP：128B)
(LPO)
(GPR：128B)
D
D
COMx
SEGx
Program
Memory
(OTP：2KW)
LCD
4x12
CPU
H08B
Watch Dog
P
VLCD
3.05V/2.75V
Low voltage
Built-In
EPROM
64 word
RESET
(BOR)
(STACK)
(WDT)
SD18
(PGA)
(ΣΔAD)
Low Voltage
Detect
Power
System
(LVD)
(Network)
(RST)
C
C
P
P
P
A
RST
AIx
VPP
VDDA ACM
LVDIN
.
C
P
D
A
Common I/O Pad
Power Pad
Digital Pad
Analog Pad
Figure 4-1 HY11P52/HY11P52B Internal Block Diagram
4.2. Related Description and Supporting Documents
IC Function Related Operating Instruction
DS-HY11P52
UG-HY11S14
APD-CORE003
HY11P52/HY11P52B Datasheet
HY11Pxx Series Users’ Manual
H08B Instruction Description
Development Tool Related Operating Instruction
APD-HYIDE001
APD-HYIDE002
APD-OTP001
HY11xxx Series Development Tool Software Instruction Manual
HY11xxx Series Development Tool Hardware Instruction Manual
OTP Products Programming Pin Manual
Product Production Related Operating Instruction
APD-ICE001
HY11P52 Low voltage programming/look-up-table/PFM application
note
APD-ICE003
HY11P52B Low voltage programming/look-up-table/PFM application
note
APD-HYIDE004
BDI-HY11P32
HY1xxxx Series Production Line Specialized Programmer Manual
HY11P52 Individual Product Die Bonding Information
© 2011-2013 HYCON Technology Corp.
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DS-HY11P52-V06_EN
Page 12
HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
4.3. SD18 Network
VDDA
ENADC[0]
ADC_CK
OSR[2:0]
20bit
SD18
INH[2:0]
DCSET[2:0]
VRGN[0]
AI2
AI6
AI4
AI0
000
001
010
011
ADGN[2:0]
*ENCHP[0]
1bit
ADCR
H/M/L
INX[1:0]
INH
VDD/2 100
ACM 101
SI+
SI-
ΣΔAD
SI:x¼,x½ ,x2,x4,x8,x16
TPSH1 110
TPSH0 111
INX
ADCIF
Interrupt
INIS[0]
INL[2:0]
AI3
AI7
AI5
AI1
000
001
010
011
+ VR:x1,x½ -
PGAGN[1:0]
INL
OPO 100
VSS 101
TPSL0 110
TPSL1 111
.
VR+
VR-
VRH[1:0]
VRL[1:0]
AI5 00
AI6
AI8
AI2
00
01
AI9 01
AI3 10
VSS 11
VRL
VRH
10
ACM 11
Figure 4-2 SD18 Network
© 2011-2013 HYCON Technology Corp.
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DS-HY11P52-V06_EN
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HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
5. Register List
“-”no use,“*”read/write,“w”write,“r”read,“r0”only read 0,“r1”only read 1,“w0”only write 0,“w1”omly write 1
“.”unimplemented bit,“x”unknown,“u”unchanged,“d”depends on condition
Address File Name
Bit7
Bit6
Bit5
Bit4
Bit3
Bit2
Bit1
Bit0
A-RESET i-RESET
N/A N/A
R/W
*,*,*,* *,*,*,*
00H
10H
18H
1AH
1BH
1CH
1DH
1EH
1FH
20H
23H
26H
29H
2BH
2CH
2DH
30H
31H
32H
33H
39H
3AH
3BH
3CH
3DH
3EH
3FH
40H
41H
42H
52H
53H
54H
55H
56H
57H
58H
59H
6DH
6EH
70H
71H
72H
74H
75H
77H
80H ~ FFH
INDF0
Contents of FSR0 to address data memory value of FSR0 not changed
Indirect Data Memory Address Pointer 0 Low Byte,FSR0[7:0]
FSR0L
STKPTR
PCLATH
PCLATL
BIECTRL
BIEPTRH
BIEPTRL
BIEDH
xxxx xxxx uuuu uuuu
000. .000 000. .000
*,*,*,* *,*,*,*
STKPRT[2:0]
PC[9]
STKFL
STKUN
STKOV
r,rw0,rw0,- -,r,r,r
-,-,-,- -,*,*,*
PC[10]
PC[8]
.... .000
.... .000
PC Low Byte for PC<7:0>
0000 0000 0000 0000
1000 d000 1000 d000
0000 0000 0000 0000
0000 0000 0000 0000
xxxx xxxx xxxx xxxx
xxxx xxxx xxxx xxxx
0000 0000 0000 0000
.000 0000 .000 0000
xxxx xxxx uuuu uuuu
xxxx xxxx xxxx xxxx
000d xxxx 000d xxxx
x000 0000 x000 0000
0xx0 xx00 0xx0 xxuu
0000 0001 0000 0001
..00 0000 ..00 0000
000. 0000 000. 0000
xxxx xxxx uuuu uuuu
xxxx xxxx uuuu uuuu
xxxx xxxx uuuu uuuu
0000 0000 0000 0000
0000 0000 0000 0000
000x xx0x 000u uu0u
xx00 xx0x xx00 xx0x
xx00 0xxx xx00 0xxx
0000 0000 0000 0000
xxxx xxxx uuuu uuuu
0000 0xxx 0000 0xxx
0xxx xxxx 0xxx xxxx
xxxx xxxx uuuu uuuu
xxxx xxxx uuuu uuuu
xxxx xxxx uuuu uuuu
xxxx xxxx uuuu uuuu
xxxx xxxx uuuu uuuu
xxxx xxxx uuuu uuuu
xxxx xxxx uuuu uuuu
0000 0000 0000 0000
0000 0000 0000 0000
0000 0000 0000 0000
0000 0000 0000 0000
*,*,*,* *,*,*,*
VPP_HIGH
BIEWR
BIERD
-,-,-,- *,r0,*,*
*,-,-,- -,*,*,*
BIE_ADDR[10:8]
BIESEL
BIE_ADDR[5:0]
BIE_DATA[15:8]
BIE_DATA[7:0]
TMAIE
TMAIF
Working Register
BIE_ADDR[7:6]
*,*,*,* *,*,*,*
*,*,*,* *,*,*,*
BIEDL
*,*,*,* *,*,*,*
INTE1
GIE
ADCIE
ADCIF
WDTIE
WDTIF
E1IE
E1IF
E0IE
E0IF
*,*,r0,r0 *,*,*,*
-,*,r0,r0 *,*,*,*
*,*,*,* *,*,*,*
INTF1
WREG
STATUS
Pstatus
LVDCN
PWRCN
MCKCN1
MCKCN2
MCKCN3
ADCRH
ADCRM
ADCRL
ADCCN1
ADCCN2
ADCCN3
AINET1
AINET2
TMACN
TMAR
C
Z
-,-,-,* -,-,-,*
PD
TO
IDLEB
LVD
BOR
SKERR
rw0,rw0,rw0,rw0 x,x,x,x
x,*,r,r *,*,*,*
LVDFG
LVDON
ENACM
ADCCK
HSCK=0
VLDX[3:0]
VDDAX[1:0]=11
ENVDDA
ENBIEP
ENLEDP
EXTBF
*,r,r,* -,-,*,*
ADCS[2:0]
ENXT=0
ENHAO
*,*,*,* r0,r0,r0,*
r0,r0,r0,r0 r0,r0,*,*
*,*,*,r0 *,*,*,*
r,r,r,r r,r,r,r
HSS[1:0]=00
PERCK
CPUCK[1:0]
LSCK=0
LCDS[2:0]
BZS[2:0]
ADC conversion memory HighByte
ADC conversion memory Middle Byte
ADC conversion memory Low Byte
r,r,r,r r,r,r,r
r,r,r,r r0,r0,r0,r0
*,r0,*,* *,*,*,*
r0,r0,r0,r0 *,*,*,*
*,*,*,- -,-,*,-
ADGN[2:0]
DCSET[2:0]
OSR[3]
PGAGN[1:0]=00 or 11
VRBUF=0 VREGN
ENADC
ENHIGN
ENCHP
INBUF=0
OSR[2:0]
INH[2:0]=XX0 or XX1(AI2 or AI0)
VRH[1:0]=X0 or X1(AI2 or ACM)
INL[2:0]=0XX or 1XX(AI1 or VSS)
INX[1:0]
ENWDT
INIS
x,x,*,* x,x,*,x
x,x,*,* *,x,x,x
*,*,*,* w1,*,*,*
r,r,r,r r,r,r,r
VRL[1:0]=11(VSS)
TMAS[1:0]
WDTS[2:0]
ENTMA
TMACK
TimerA data register
VLCDX[1:0]
LCDBI[1:0]=10
LCDCN1
LCDCN2
LCD0
ENLCD
LCDBL
LCDPR
LCDMX[1:0]=11
LCDBF
*,*,*,* *,x,x,x
*,x,x,x x,x,x,x
*,*,*,* *,*,*,*
Segment SEG2@[3:0] and SEG3@[7:4] data register of LCD0
Segment SEG4@[3:0] and SEG5@[7:4] data register of LCD1
Segment SEG6@[3:0] and SEG7@[7:4] data register of LCD2
Segment SEG8@[3:0] and SEG9@[7:4] data register of LCD3
Segment SEG10@[3:0] and SEG11@[7:4] data register of LCD4
Segment SEG12@[3:0] and SEG13@[7:4] data register of LCD5
LCD1
*,*,*,* *,*,*,*
.
LCD2
*,*,*,* *,*,*,*
LCD3
*,*,*,* *,*,*,*
LCD4
*,*,*,* *,*,*,*
LCD5
*,*,*,* *,*,*,*
PT1
PT1.7
TC1.7
PU1.7
PT1.6
TC1.6
PU1.6
PT1.5
TC1.5
PU1.5
PT1.4
TC1.4
PU1.4
PT1.3
PT1.2
PU1.2
PT1.1
PU1.1
PT1.0
PU1.0
*,*,*,* r,r,r,r
TRISC1
PT1PU
PT1M1
PT1M2
PT2
*,*,*,* r0,r0,r0,r0
*,*,*,* *,*,*,*
PU1.3
INTEG1[1:0]
INTEG0[1:0]
r0,r0,r0,r0 *,*,*,*
r0,*,r0,r0 r0,r0,r0,r0
x,x,x,x *,*,*,*
x,x,x,x *,*,*,*
x,x,x,x *,*,*,*
*,*,*,* *,*,*,*
PM1.7[0]
PT2.3
PT2.2
TC2.2
PU2.2
PT2.1
TC2.1
PU2.1
PT2.0
TC2.0
PU2.0
…. xxxx
…. 0000
…. 0000
…. uuuu
…. 0000
…. 0000
TRISC2
PT2PU
TC2.3
PU2.3
GENERAL PURPOSE REGISTER @ 128Byte
xxxx xxxx uuuu uuuu
Figure 5-1 HY11P52/HY1P52B Register List
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DS-HY11P52-V06_EN
Page 14
HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
6. Electrical Characteristics
Absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Voltage applied at VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.2 V to 4.0 V
Voltage applied to any pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.2 V to VDD + 0.3 V
Voltage applied to RST/VPP pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.2 V to 6.9 V
Voltage applied to TST/PT1.3 pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.2 V to VDD + 1 V
Diode current at any device terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±2 mA
Storage temperature, Tstg: (unprogrammed device) . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . −55℃ to 150℃
(programmed device) . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . −40℃to 85℃
Total power dissipation. . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5w
Maximum output current sink by any PORT1 to PORT2 I/O Pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25mA
6.1Recommended Operating Conditions
TA = -40℃ ~ 85℃,unless otherwise noted
Sym.
Parameter
Test Conditions
Min. Typ.
Max
.
unit
All digital peripherals and CPU
2.2
2.4
0
3.6
3.6
0
Supply Voltage
VDD
VSS
V
Analog peripherals
.
Supply Voltage
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Page 15
HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
6.2 Internal RC Oscillator
TA = 25℃,VDD = 3.0V,unless otherwise noted
Sym.
Parameter
Test Conditions
Min. Typ.
Max
.
unit
High Speed Oscillator frequency
Low Power Oscillator frequency
ENHAO[0]=1
1.6
22
2.0
28
2.4
35
MHz
KHz
HAO
LPO
VDD supply voltage be enable LPO
HAO vs. VDD
LPO vs. VDD
2.030
2.025
2.020
2.015
2.010
2.005
2.000
1.995
1.990
1.985
1.980
1.975
1.970
30.00
29.00
28.00
27.00
26.00
25.00
24.00
2.2V
2.4V
2.6V
2.8V
3.0V
3.2V
3.4V
3.6V
2.2V
2.4V
2.6V
2.8V
3.0V
3.2V
3.4V
3.6V
VDD
VDD
Figure 6.2-1 HAO vs. VDD
Figure 6.2-2 LPO vs. VDD
HAO vs. TA@VDD=3.0V
LPO vs. Temperature @VDD
1.980
1.960
1.940
1.920
1.900
1.880
.
31.00
30.00
29.00
28.00
27.00
26.00
25.00
24.00
VDD=3.6V
VDD=3.0V
1.860
1.840
VDD=2.2V
65
1.820
-40
-35
-15
5
25
45
85
-40
℃
-15
℃
15
℃
25
℃
45
℃
75
℃
85
℃
Temperature (
)
℃
Temperature(
)
℃
Figure 6.2-3 HAO vs. Temperature
Figure 6.2-4 LPO vs. Temperature
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HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
6.3Supply Current into VDD Excluding Peripherals Current
TA = 25℃,VDD = 3.0V,OSC_LPO = 28KHz,unless otherwise noted
Sym.
Parameter
Test Conditions
Min. Typ.
Max
.
unit
Active mode 2
Active mode 3
Low Power 2
Low Power 3
OSC_CY = off, OSC_HAO = 2MHz, CPU_CK = 2MHz
OSC_CY = off, OSC_HAO = 2MHz, CPU_CK = 1MHz
OSC_CY = off, OSC_HAO = off, CPU_CK = LPO, Idle state
OSC_CY = off, OSC_HAO = off, CPU_CK = off, Sleep state
0.28
0.165
1.65
0.55
0.3
3
mA
mA
uA
IAM2
IAM3
ILP2
ILP3
0.65
1.2
uA
OSC_HAO：Internal High Accuracy Oscillator frequency.
CPU_CK：CPU core work frequency.
IAM2 vs VDD
IAM3 vs VDD
450
400
350
300
250
200
150
100
250
200
150
100
50
0
.
2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6
VDD(V)
2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6
VDD(V)
Figure 6.3-1 IAM2 vs. VDD
Figure 6.3-2 IAM3 vs. VDD
ILP2 vs VDD
ILP2 with temperature at VDD=3V
2.50
2.00
1.50
1.00
0.50
0.00
3
2.6
2.2
1.8
1.4
1
-40
-30
-20
-10
0
10
25
TA(
30
40
50
60
70
85
2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6
VDD(V)
)
℃
Figure 6.3-3 ILP2 vs. VDD
Figure 6.3-4 ILP2 vs. Temperature
ILP3 vs VDD
ILP3 with temperature at VDD=3V
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-40
-30
-20
-10
0
10
25
TA(
30
40
50
60
70
85
2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6
VDD(V)
)
℃
Figure 6.3-5 ILP3 vs. VDD
Figure 6.3-6ILP3 vs. Temperature
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HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
. 6.4 Port 1~2
TA = 25℃,VDD = 3.0V,unless otherwise noted
Sym.
Parameter
Test Conditions
Min. Typ.
Max
.
unit
Input voltage and Schmitt trigger and leakage current and timing
High-Level input voltage
2.1
VIH
V
Low-Level input voltage
0.9
VIL
0.8
V
Vhys
ILKG
RPU
Input Voltage hysteresis(VIH - VIL )
Leakage Current
0.1
uA
kΩ
Port pull high resistance
180
Output voltage and current and frequency
VDD -0.3
High-level output voltage
IOH=10mA
IOL=-10mA
VOH
V
VSS +0.3
Low-level output voltage
VOL
VOH vs. IOH@VDD=3.0V
VOH vs. IOH@VDD=2.2V
3
2.8
2.6
2.4
2
1.5
1
25
℃
.
25
℃
85
℃
85
℃
0.5
0
2.2
2
0MA
-5MA -10MA -15MA -20MA -25MA -30MA -35MA
IOH
0MA
-5MA -10MA -15MA -20MA -25MA -30MA -35MA
IOH
Figure 6.4-1 VOH vs. IOH @VDD=3.0V
Figure 6.4-2 VOH vs. IOH @VDD=2.2V
VOL vs. IOL@VDD=3.0V
VOL vs. IOL@VDD=2.2V
0.9
0.8
0.6
0.9
0.8
85
℃
0.6
0.5
0.3
0.2
0.0
85
℃
0.5
0.3
0.2
0.0
25
℃
25
℃
0MA
5MA
10MA 15MA 20MA 25MA 30MA 35MA
IOL
0MA
5MA
10MA 15MA 20MA 25MA 30MA 35MA
IOL
Figure 6.4-3 VOL vs. IOL@VDD=3.0V
Figure 6.4-4 VOL vs. IOL@VDD=2.2V
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HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
6.5 Reset (Brownout, External RST pin, Low Voltage Detect)
TA = 25℃,VDD = 3.0V,unless otherwise noted
Sym.
BOR
RST
Parameter
Test Conditions
Min. Typ.
Max
.
unit
2
us
V
Pulse length needed to accepted reset internally, td-LVR
1.6
1.85
70
2.1
VDD Start Voltage to accepted reset internally (LH),VLVR
Hysteresis, VHYS-LVR
mV
us
V
2
Pulse length needed as RST/VPP pin to accepted reset internally, td-RST
Input Voltage to accepted reset internally
Hysteresis, VHYS-RST
0.9
0.8
10
V
Operation current, ILVD
15
uA
External input voltage to compare reference voltage
1.2
100
3.3
3.2
3.1
3.0
2.9
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
V
Compare reference voltage temperature drift
TA = -40℃~ 85 ℃
ppm/℃
Detect VDD voltage rang by user option, VSVS VLDx[3:0]=1110b
Detect VDD voltage rang by user option, VSVS VLDx[3:0]=1101b
Detect VDD voltage rang by user option, VSVS VLDx[3:0]=1100b
Detect VDD voltage rang by user option, VSVS VLDx[3:0]=1011b
.
Detect VDD voltage rang by user option, VSVS VLDx[3:0]=1010b
Detect VDD voltage rang by user option, VSVS VLDx[3:0]=1001b
Detect VDD voltage rang by user option, VSVS VLDx[3:0]=1000b
Detect VDD voltage rang by user option, VSVS VLDx[3:0]=0111b
Detect VDD voltage rang by user option, VSVS VLDx[3:0]=0110b
Detect VDD voltage rang by user option, VSVS VLDx[3:0]=0101b
Detect VDD voltage rang by user option, VSVS VLDx[3:0]=0100b
Detect VDD voltage rang by user option, VSVS VLDx[3:0]=0011b
Detect VDD voltage rang by user option, VSVS VLDx[3:0]=0010b
Detect VDD voltage rang by user option, VSVS VLDx[3:0]=0001b
LVD
V
BOR：Brownout Reset
LVR：Low Voltage Reset of BOR
LVD：Low Voltage Detect
RST：External Reset pin
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Page 19
HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
Figure 6.5-1 BOR Reset Diagram
Figure 6.5-2 RST Reset Diagram
*1 rRST：Please see BOR Introduce of HY11Pxx series User’s Guide (UG-HY11S14)
VLVR and VLVR Release Voltaage vs. TA
1.98
1.96
1.94
LVR Release Voltage
V
1.92
1.90
1.88
1.86
1.84
1.82
1.80
LVR Voltage
V
-40
-35
-15
5
25
45
65
85
℃
℃
℃
℃
℃
℃
℃
℃
.
TA
Figure 6.5-3 LVR vs. Temperature
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HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
6.6 Power System
TA = 25℃,VDD = 3.0V,unless otherwise noted
Sym.
Parameter
Test Conditions
Min.
Typ.
Max.
unit
IL = 0mA
VDDAX[1:0]=00b
22
uA
VDDA operation current, IVDDA
IL = 0.1mA,
Select VDDA output voltage
Dropout voltage
VDDAX [1:0]=11b
2.4
V
VDD≧VDDA+0.25V
IL = 10mA
VDDA
VDDAX [1:0]=11b
TA=-40℃~85℃
VDD=2.5V~3.6V
250
50
mV
ppm/℃
%/V
Temperature drift
VDDAX [1:0]=11b
IL = 0.1mA
VDD Voltage drift
±0.2
20
IL = 0mA
uA
ACM operation current, IACM
Output voltage ,VACM
Output voltage with Load
Temperature drift
ENACM[0]=1
IL = 0uA
IL = ±200uA
1.0
V
0.98
1.02
VACM
ppm/℃
uV/V
ACM
ENACM[0]=1,
IL = 10uA
TA=-40℃~85℃
50
VDDA Voltage drift
100
VDDA：Adjust Voltage Regulator
ACM：Analog Common Mode Voltage
VDDA@2.4V with VDD
2.3900
.
VDDA with temperature
2.3910
2.3900
2.3890
2.3895
2.3890
2.3885
2.3880
2.3875
2.3870
2.3865
2.3860
2.3855
2.3850
2.3845
2.3840
I
L
=0.1mA
VDD=3.0V
2.3880
2.3870
2.3860
2.3850
2.3840
2.3830
2.3820
2.3810
VDD=2.5V
L
I =0.1mA
-40
-35
-15
5
25
45
65
85
3.6V 3.5V 3.4V 3.3V 3.2V 3.1V 3.0V 2.9V 2.8V 2.7V 2.6V 2.5V
VDD(V)
℃
TA(
)
Figure 6.6-1 VDDA lL=0.1mA vs. VDD
Figure 6.6-2 VDDA lL=0.1mA vs. Temperature
VDDA@2.4V with VDD
VDDA with temperature
2.3880
2.390
L
I =10mA
2.388
2.386
2.384
2.382
2.380
2.378
2.376
2.374
2.372
2.3860
2.3840
2.3820
2.3800
2.3780
2.3760
2.3740
2.3720
2.3700
2.3680
2.3660
VDD=3.0V
VDD=2.6V
L
I =10mA
3.6V 3.5V 3.4V 3.3V 3.2V 3.1V 3.0V 2.9V 2.8V 2.7V 2.6V
VDD(V)
-40
-35
-15
5
25
45
65
85
TA(℃)
Figure 6.6-3 VDDA lL=10mA vs. VDD
Figure 6.6-4 VDDA lL=10mA vs. Temperature
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HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
ACM Load with VDDA
ACM vs. VDD with temperature @VDDA=2.4V
0.992
1.010
1.005
1.000
0.995
0.990
0.985
0.980
IL=200uA
VDD=3.6V
VDD=2.5V
0.992
0.991
IL=0uA
0.991
0.990
IL=-200uA
0.990
IL=10uA
0.989
0.989
0.988
2.4
2.6
2.9
3.3
-40
-20
0
20
TA (
40
60
80
100
Internal VDDA(V)
℃
)
Figure 6.6-5 ACM Load vs. VDDA
Figure 6.6-6 ACM vs. Temperature
.
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Page 22
HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
6.7 LCD
TA = 25℃,VDD = 3.0V, CVLCD =4.7uF,unless otherwise noted.
Sym.
Parameter
Operation supply current without
output buffer.(all segment turn on)
(HY11P52)
Test Conditions
Min. Typ. Max.
unit
LCDPR[0]=1
VDD = 2.2V
10
uA
ILCD
V
DD = 3.0V
Supply Voltage at VLCD pin
LCDPR[0]=0
VDD = 2.2V,
2.2
3.6
V
VLCDX[1:0]=11b
VLCDX[1:0]=10b
VLCDX[1:0]=01b
VLCDX[1:0]=00b
2.295
2.52
2.55
2.8
2.805
3.08
LCDPR[0]=1,
CVLCD =4.7uF
Embedded Charge Pump output
voltage at VLCD pin
VLCD
V
2.745
2.97
3.05
3.3
3.355
3.63
Output impedance with LCD buffer
(HY11P52)
fLCD =128Hz,VLCD=3.05V
10
kΩ
uA
kΩ
ZLCD
ILCD1
ZLCD1
LCDPR[0]=1
Operation supply current without
output buffer.(all segment turn on)
(HY11P52B)
VDD = 2.2V
8
V
DD = 3.0V
.
Output impedance with LCD buffer
(HY11P52B)
fLCD =128Hz,VLCD=3.05V
20
VLCD Start Time
VLCD vs. Load
142
3.3
3.1
2.9
2.7
2.5
2.3
2.1
VDD=2.2V
VDD=2.2V
122
102
82
62
42
22
2
VDD=3.0V
VDD=3.6V
3.3
10
20
30
40
50
60
70
80
90
100
2.55
2.8
3.05
VLCD(V)
IL(uA)
Figure 6.7-1 LCD start time
Figure 6.7-2 VLCD vs. IL @VDD=2.2V
VLCD vs. VDD
VLCD vs. Load
3.5
VDD=3.0V
3.08
3.05
3.02
2.99
2.96
2.93
2.90
3.3
3.1
2.9
2.7
2.5
2.3
2.1
125
150
175
200
225
250
275
300
325
350
VDD(V)
IL(uA)
Figure 6.7-3 VLCD vs. VDD
Figure 6.7-4 VLCD vs. IL @VDD=3.0V
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Page 23
HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
.6.8 SD18, Power Supply and Recommended Operating Conditions
TA = 25℃,VDD = 3.0V, VDDA=2.4V,unless otherwise noted
Sym.
Parameter
Test Conditions
Min. Typ. Max.
unit
V
Supply Voltage at VDDA
ENVDDA[0]=0
2.4
25
3.6
300
VSD18
Modulator sample frequency, ADC_CK
Over Sample Ratio, OSR
250
120
KHz
f SD18
128 *1
32768
Operation supply current
ENADC[0]=1
without PGA
GAIN =4,
ADC_CK=250KHz
uA
I SD18
*1, OSR=128, setting by ADCCN3[ OSR3 ] bit.
OSR[3:0]=1010b, OSR=128; OSR[3:0]=0xxx, OSR=256 ~ 32768
OSR[3:0]=1xxxb can’t set by user
6.8.1 PGA, Power Supply and Recommended Operating Conditions
TA = 25℃,VDD = 3.0V, VDDA=2.4V,unless otherwise noted
Sym.
VPGA
I PGA
Parameter
Test Conditions
Min. Typ. Max.
unit
V
Supply Voltage at VDDA
Operation supply current
Gain temperature drift
ENVDDA[0]=0
2.4
3.6
.
PGAGN[1:0]=<11>
320
15
uA
TA = -40℃~ 85℃
GAIN=128
ppm/℃
GPGA
6.8.2 SD18, Performance II (fSD18=250KHz)
TA = 25℃,VDD = 3.0V, VDDA=2.9V,VVR=1.0V,GAIN=1 without PGA, unless otherwise noted
Sym.
Parameter
Test Conditions
VDDA=2.4V,VVR=1.0V,∆SI=±200mV
VDDA=2.4V,VVR=1.0V,∆SI=±450mV
Min. Typ. Max.
unit
±0.003
±0.01
Integral Nonlinearity(INL)
%FSR
INL
No Missing Codes3
ADC_CK=250KHz,OSR[2:0]=010b
19
Bits
Temperature drift
TA = -40℃~ 85℃
10
ppm/℃
GSD18
Gain 1~x16 (INBUF[0]=0b,)
Offset error of Full Scale Rang input
voltage range with Chopper without
PGA
Gain=2
1
%FSR
∆AI=0V
∆VR=0.9V
GAIN=1
GAIN=2
GAIN=4
GAIN=16
2
1
EOS
DCSET[2:0]=<000>
*∆AI is external short
Offset error temperature drift with
chopper without PGA
uV/℃
0.5
0.15
Common-mode rejection
dB
CMSD18
VCM=0.7V to 1.7V,
VSI=0V,
90
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HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
VVR=1.0V,without PGA
VCM=0.7V to 1.7V,
GAIN=1
VSI=0V,
75
75
VVR=1.0V, without PGA
GAIN=16
GAIN=1
PGA=off
GAIN=16
PGA=8
VDDA=3.0V,∆VDDA=±100mV,
PSRR
DC power supply rejection
dB
VVR=1.0V, VSI=1.2V,VSI-=1.2V,
SD18 Offset Drfit vs. Temperature
SD18 Offset Drfit vs. Temperature
2.0
1.5
4.5
4
3.5
3
2.5
2
1.0
0.5
0.0
1.5
1
0.5
0
-0.5
-1.0
-1.5
-40℃ -20℃ 0℃ 25℃ 45℃ 65℃ 85℃
TA
-40℃ -20℃ 0℃ 25℃ 45℃ 65℃ 85℃
TA
Gain=1, SI and VR buffer off
VIN =0V
ꢀVR=0.9V, VDDA=2.4V
Gain=16, SI and VR buffer off
VIN =0V
ꢀVR=0.9V, VDDA=2.4V
Figure 6.8-1(a) SD18 Offset Temperature Drift
Figure 6.8-1(b) SD18 Offset Temperature Drift
SD18 Offset Drfit vs. Temperature
SD18 Gain Drfit vs. Temperature
0.08%
0.07%
0.06%
0.05%
0.04%
0.03%
0.02%
0.01%
0.00%
-0.01%
-0.02%
0.6
0.4
0.2
0
.
-0.2
-0.4
-0.6
-40℃ -20℃ 0℃ 25℃ 45℃ 65℃ 85℃
-40℃ -20℃ 0℃ 25℃ 45℃ 65℃ 85℃
TA
Gain=128, SI and VR buffer off
VIN =0V
Gain=16, SI and VR buffer off
ꢀSI=37.5mV, ꢀVR=0.9V
VDDA=2.4V
TA
ꢀVR=0.9V, VDDA=2.4V
Figure 6.8-1(c) SD18 Offset Temperature Drift
Figure 6.8-2(a) SD18 Gain Drift with Temperature
SD18 Gain Drfit vs. Temperature
SD18 Gain Drfit vs. Temperature
0.07%
0.06%
0.05%
0.04%
0.03%
0.02%
0.01%
0.00%
0.06%
0.05%
0.04%
0.03%
0.02%
0.01%
0.00%
-0.01%
-0.01%
-0.02%
-40℃ -20℃ 0℃ 25℃ 45℃ 65℃ 85℃
-40℃ -20℃ 0℃ 25℃ 45℃ 65℃ 85℃
TA
Gain=128, SI and VR buffer off
ꢀSI=4.6875mV, ꢀVR=0.9V
VDDA=2.4V
TA
Gain=1, SI and VR buffer off
ꢀSI=300mV, ꢀVR=0.9V
VDDA=2.4V
Figure 6.8-2(b) SD18 Gain Drift with Temperature
Figure 6.8-2(c) SD18 Gain Drift with Temperature
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HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
6.8.3 SD18 Noise Performance
TA = 25℃,VDD = 3.0V, VDDA=2.4V,unless otherwise noted
HY11P52/HY11P52B provides important input noise specification that aims at SD18.
Table 6.8-4(a) and Table 6.8-4(b) lists out the relations of typical noise specification, Gain,
Output rate, and maximum input voltage of single end. Test condition configuration and
external input signal short, voltage reference: 1.2V and 1024 records were sampled.
ENOB(RMS) with OSR/GAIN at A/D Clock=250Khz, VDDA=2.4V, VREF=1.2V
OSR
128
256
512
1024
2048
4096
8192 16384 32768
Max. Vin(mV)
=0.9*VREF (1)
Output rate(HZ)
1953
977
488
244
122
61
31 15
8
Gain
0.25
0.5
1
=
=
=
=
=
=
=
=
=
PGA × ADGN
±2400
±2160
±1080
±540
±270
±135
±68
1
1
1
1
1
1
1
8
×
×
×
×
×
×
×
×
0.25 14.43 16.07 17.20 17.86 18.29 18.66 18.98 19.13 19.30
0.5
1
14.34 16.05 17.13 17.84 18.26 18.62 18.90 19.13 19.27
14.38 16.06 17.11 17.72 18.13 18.53 18.88 19.05 19.22
14.40 15.98 16.96 17.59 18.01 18.45 18.79 19.01 19.17
14.39 15.88 16.82 17.39 17.85 18.28 18.65 18.95 19.13
14.27 15.75 16.58 17.15 17.60 18.04 18.45 18.78 19.02
14.14 15.51 16.18 16.73 17.21 17.70 18.15 18.52 18.83
13.04 13.83 14.32 14.87 15.38 15.86 16.36 16.84 17.28
2
2
4
4
8
8
16
128
16
16
±8
(1) Max.Vin (mV) is the max. input voltage of single end to ground (VSS).
Table 6.8-3(a) SD18 ENOB Table
.
RMS Noise(uV) with OSR/GAIN at A/D Clock=250Khz, VDDA=2.4V, VREF=1.2V
OSR
128
256
512
1024
2048
4096
8192 16384 32768
Max. Vin(mV)
=0.9*VREF
Output rate(HZ)
1953
977
488
244
122
61
31
15
8
Gain
0.25
0.5
1
=
=
=
=
=
=
=
=
=
PGA × ADGN
±2400
±2160
±1080
±540
±270
±135
±68
1
1
1
1
1
1
1
8
×
×
×
×
×
×
×
×
0.25 362.92 139.77 64.33 40.65 30.04 23.35 18.70 16.75 14.92
0.5 193.22 70.82 33.83 20.60 15.37 12.00
9.86
5.01
2.66
1.46
0.84
0.51
0.22
8.38
4.44
2.28
1.18
0.67
0.40
0.16
7.61
3.92
2.05
1.05
0.56
0.32
0.12
1
2
94.14 35.38 17.16 11.17
8.40
4.57
2.54
1.51
0.99
0.44
6.34
3.35
1.89
1.11
0.70
0.32
2
46.23 18.59
9.48
5.20
3.06
2.02
0.91
6.13
3.51
2.06
1.38
0.63
4
4
23.37
12.66
6.93
9.98
5.47
3.23
1.29
8
8
16
128
16
16
±8
1.86
Table 6.8-3(b) SD18 RMS Noise Table
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HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
The RMS noise is referred to the input. The Effective Number of Bits (ENOB (RMS Bit))
is defined as:
FSR
ln
RMSNoise
ENOB(RMS)
ln(2)
2 VREF 1024ADO
k
- Average
2
k1
RMSNoise
223
Where FSR (Full- Scale Range) 2 VREF/Gain.
1024ADO
k
k1
Average
1024
RMS Noise Diagram
RMS Noise Diagram
2
600
500
400
300
200
100
0
Gain=1
Output rate ~ 8sps
Gain=1
Output rate ~ 8sps
1
0
.
-1
-2
-2
-1
0
Output Code (LSB)
1
2
1
201
401
601
801
1001
Time (reading number)
LSB base on 19-bit output
LSB base on 19-bit output
Figure 6.8-3(a) RMS Noise Diagram
Figure 6.8-3(b) Output Code Diagram
RMS Noise Diagram
RMS Noise Diagram
300
250
200
150
100
50
6
4
Gain=128
Output rate ~ 8sps
Gain=128
Output rate ~ 8sps
2
0
-2
-4
-6
0
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
1
201
401
601
801
1001
Output Code (LSB)
Time (reading number)
LSB base on 18-bit output
LSB base on 18-bit output
Figure 6.8-3(c) RMS Noise Diagram
Figure 6.8-3(d) Output Code Diagram
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HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
6.9 Built-in EPROM (BIE)
TA = 25℃,VDD = 3.0V, unless otherwise noted
Sym.
VBIE
I BIE
Parameter
Test Conditions
Min. Typ. Max.
unit
V
Supply Voltage
6.0
5
6.5
Operation supply current
Supply Voltage
mA
V
0
VSS
When using external VBIE power to write BIE zone, one word can be written in a time via instruction in BIE zone.
6.10 Built-in EPROM (BIE)_Low Voltage Control Circuit (HY11P52)
TA=25℃, VDD = 3.05V, unless otherwise noted
Sym.
TO
Parameter
Test Conditions
Min. Typ. Max.
unit
℃
Operation temperature range
Operation supply Voltage
Supply Voltage
0
25
40
3.05
3.4
V
VDD
VSS
0
V
When HY11P52 starts 3.05V low programming voltage control circuit, it is not necessary to connect VBIE power to program BIE zone.
6.11 Built-in EPROM (BIE)_ Low Voltage Control Circuit (HY11P52B)
.
TA=25℃, VDD = 3.05V, unless otherwise noted
Sym.
TO
Parameter
Test Conditions
Min. Typ. Max.
unit
℃
Operation temperature range
Operation supply Voltage
Supply Voltage
0
25
40
2.75
3.6
V
VDD
VSS
0
V
When HY11P52B starts 2.75V low programming voltage control circuit, it is not necessary to connect VBIE power to program BIE zone.
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HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
6.12 PFM Control Circuit
TA = 25℃,VDD = 3.3V, unless otherwise noted
Sym.
FS
Parameter
Test Conditions
Min. Typ. Max.
Unit
PFM Switching Frequency
Feedback Reference Voltage
125
FS
0.2
FB
FB
Activate PFM control loop: PWRCN[ ENLEDP ] =1b; using this control loop, PT1.2 needs to be set as input pin and PT1.6 as output
pin
.
Figure 6.11 PFM Typical Application for LED Applications
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HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
7. Ordering Information
Shipment
Code2 Packing
Type
Package
Type
Package
Drawing
Unit
Material
Device No.1
Pins
MSL3
Q’ty Composition
4
HY11P52-D000
HY11P52B-D000
HY11P52-L048
HY11P52B-L048
Die
Die
-
D
D
L
000
000
048
048
000
000
000
000
-
250
250
250
250
-
Green
Green
Green
Green
4
4
4
-
-
-
LQFP
LQFP
48
48
Tray
Tray
MSL-3
MSL-3
L
1 Device No.: Model No. – Package Type Description – Code (Blank Code/ Standard/
Customized Programming Code)
Ex: Your HY11P52B customized programming code is 008 and you require die type.
The device No. will be HY11P52B-D000-008
Ex: You request HY11P52B blank code in die package.
The device No. will be HY11P52B-D000
Ex: You request HY11P52B blank code in LQFP48 package. The device no will be
HY11P52B-L048. And please clearly indicate the shipment packing type as Tray
.
type when placing orders.
Ex: Your HY11P52B customized programming code is 009 and you require LQFP48
package. The device no will be HY11P52-L048-009.
And please clearly indicate the shipment packing type when placing orders.
2 Code
“001”~ “999” is standard or customized programming code. Blank code does not have
these numbers.
3 MSL:
The Moisture Sensitivity Level ranking conforms to IPC/JEDEC J-STD-020 industry
standard categorization. The products are processed, packed, transported and used
with reference to IPC/JEDEC J-STD-033.
4 Green (RoHS & no Cl/Br):
HYCON products are Green products that compliant with RoHS directive and are
Halogen free (Br/Cl<0.1%)
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HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
8. Package Information
8.1. LQFP48(L048)
.
JEDEC MS-026 compliant
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HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
9. Appendix A
9.1. Difference of Simulator
When using HY11P series simulator (HY11S14-DK02), part of HY11P52/HY11P52B IC’s
new function cannot be simulated on existed simulator. Users can refer to HY11P52 low
voltage programming/Look-up-table/PFM Application Note (APD-ICE001) and HY11P52B
low voltage programming/Look-up-table/PFM Application Note to learn new function and
operation setup. There are some design and programming differences under different
models. Below table marks out major differences:
TA = 25℃,VDD = 3.0V, unless otherwise noted
HY11P52
10uA
HY11P52B
HY11S14-DK02
Item
LCD Module Current Consumption
8uA
20uA
(ILCD
)
250mV
250mV
180mV
5msec
VDDA Dropout Voltage (IL=10mA)
VDDA Start up time (IL=10mA)
ADC Over Sample Ratio (OSR)
1msec
128~32768
Through BIE
Look-up-table
.
1msec
128~32768
Through BIE
Look-up-table
256~32768
Unsupportive
16Bits Look-up-table Instruction
BIE Low Programming Voltage
Control
Support VDD≧3,05V Support VDD≧2.75V
Unsupportive
Unsupportive
Supportive
Supportive
PFM Control Circuit
Table A-1 Major Differences of HY11P52 and HY11P52B in Simulator
9.2. Difference of Current Consumption
Typical value of LCD module current consumption is around 20uA of HY11P series
simulator (HY11S14-DK02) while that of HY11P52 IC’s LCD module is reduced to only a
half, 10uA remaining. HY11P52B has better LCD module current consumption, lowering
than HY11P52, only 8uA remaining. Users can verify this in real IC after product
development.
9.3. Difference of VDDA Power Source
VDDA Dropout Voltage (VDDA=2.4V, IL=10mA) of HY11P series simulator
(HY11S14-DK02) has typical value around 180mV while HY11P52/HY11P52B IC’s VDDA
Dropout Voltage is enhanced to around 250 mV. Users can reserve VDDA Dropout voltage
at product development stage, as to achieve best performance of VDDA power.
VDDA Start up time (VDDA=2.4V, IL=10mA, VDDA Cap: 1uF) of HY11P series simulator
(HY11S14-DK02) has typical value around 5msec while HY11P52/HY11P52B IC’s VDDA
power support fast start up function. Its VDDA power regulation capacitor can reduce to
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HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
0.47uF and VDDA Start up time (VDDA=2.4V, IL=10mA, VDDA Cap: 0.47uF) reduce to
around 1msec. Users can verify this function by adjusting VDDA power stabilization time to
perform fast start up advantage in real IC after product development.
9.4. Difference of ADC OSR
ADC Over Sample Ratio (OSR) configurations of HY11P series simulator (HY11S14-DK02)
can only select from 256~32768 while HY11P52/HY11P52B chip, ADC supports faster
output rate options. It’s ADC Over Sample Ratio (OSR) can be configured from 128~32768,
equivalent to ADC output rate being enhanced from 1Ksps to 2Ksps, more applicable to
applications that require faster ADC speed and 12-bit resolution. Users can set add in the
program configuration and verify it in real IC.
9.5. Difference of 16Bits Look-up-table Instruction
When HY11P series simulator (HY11S14-DK02) programming data to BIE block, an
external VDD=3V, VPP=6V voltage must be connected to implement BIE programming
function.
HY11P52/HY11P52B has a new feature of BIE low programming voltage control. Users
only need to connect VDD=3.05V voltage instead of VPP=6V voltage to implement BIE
.
block programming function. Detailed description please refer to APD-ICE001 (HY11P52
Low Voltage Programming/Look-up-table/PFM Application Note), APD-ICE003 (HY11P52B
Low Voltage Programming/Look-up-table/PFM Application Note). This function cannot be
simulated on HY11P series simulator (HY11S14-DK02), users must connect to external
VPP=6V voltage to simulate normal BIE programming function (no need to add VPP
voltage in actual chip).
9.6. Difference of BIE, Low Programming Voltage Control Function
When HY11P series simulator (HY11S14-DK02) programming data to BIE block, an
external VDD=3V, VPP=6V voltage must be connected to implement BIE programming
function.
HY11P52/HY11P52B has a new feature of BIE low programming voltage control. Users
only need to connect VDD=3.05V voltage instead of VPP=6V voltage to implement BIE
block programming function. Detailed description please refer to APD-ICE001 (HY11P52
Low Voltage Programming/Look-up-table/PFM Application Note), APD-ICE003 (HY11P52B
Low Voltage Programming/Look-up-table/PFM Application Note). This function cannot be
simulated on HY11P series simulator (HY11S14-DK02), users must connect to external
VPP=6V voltage to simulate normal BIE programming function (no need to add VPP
voltage in actual chip).
9.7. Difference of PFM Control Circuit
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HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
PFM (Pulse-Frequency Modulation) control circuit is a new feature of HY11P52/HY11P52B.
HY11P series simulator (HY11S14-DK02) does not support this function. Detailed
operations manual please refer to APD-ICE001 (HY11P52 low voltage
programming/look-up-table/PFM application notel) & low voltage
programming/look-up-table/PFM application notel). This function cannot be simulated on
HY11P Series simulator (HY11S14-DK02), users must add in the program configuration
and verify it in real IC.
9.8. Fast ADC Output Configuration
HY11P52/HY11P52B Σ∆ADC provides fast output function, which can be configured by
OSR[3:0]=1010b to achieve OSR=128, equivalent ADC output rate is around 2Ksps (fast
output setup).
Software configurations are as follows:
MVL
MVF
01000010B
ADCCN3,1,0
; Configure Σ∆ADC output frequency around 2Ksps
.
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HY11P52/HY11P52B
Embedded 18-Bit Σ∆ADC
8-Bit RISC-like Mixed Signal Microcontroller
10.Revision Record
Major differences are stated thereinafter:
Version Page
Revision Summary
First Edition
V03
V06
All
All
Revise All
.
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