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GM71S17400CT-6 [HYNIX]

Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24;

GM71S17400CT-6


元器件型号：	GM71S17400CT-6
生产厂家：	HYNIX SEMICONDUCTOR
描述和应用：	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24 动态存储器 ISM频段光电二极管内存集成电路
PDF文件：	总10页 (文件大小：85K)
下载文档：	下载PDF数据表文档文件
型号参数：GM71S17400CT-6参数

GM71S17403C(CL)

4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M

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6 ETC

GM71S17403C-5

4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

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19 HYNIX

GM71S17403C-6

4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

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22 HYNIX

GM71S17403C-7

4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

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17 HYNIX

GM71S17403CL-5

4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

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17 HYNIX

GM71S17403CL-6

4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

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12 HYNIX

GM71S17403CL-7

4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

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12 HYNIX

GM71S17800C(CL)

2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M

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21 ETC

GM71S17803C(CL)

2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M

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2 ETC

GM71S18160C(CL)

1Mx16|5V|1K|5/6|FP/EDO DRAM - 16M

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4 ETC

GM71S18163C(CL)

1Mx16|5V|1K|5/6|FP/EDO DRAM - 16M

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6 ETC

GM71S4400C

1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM

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18 LG

GM71S4400C-60

1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM

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11 LG

GM71S4400C-70

1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM

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11 LG

GM71S4400C-80

1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM

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10 LG

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