GM76C256CLT-85E [HYNIX]
Standard SRAM, 32KX8, 85ns, CMOS, PDSO28;
| 型号： | GM76C256CLT-85E |
| 厂家： | 
HYNIX SEMICONDUCTOR |
| 描述： | Standard SRAM, 32KX8, 85ns, CMOS, PDSO28 静态存储器 光电二极管 内存集成电路 |
| 文件： | 总11页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GM76C256C Series
32Kx8bit CMOS SRAM
Document Title
32K x8 bit 5.0V Low Power CMOS slow SRAM
Revision History
Revision No History
Draft Date
Remark
Final
00
Revision History Insert
Revised
Jul.07.2000
-
-
-
Datasheet format change
PDIP package type insert
Pin configuration change
01
02
Revised
Nov.28.2000
Dec.04.2000
Final
Final
-
tWP Value Change @55ns : 45ns -> 40ns
Marking Information Add
Revised
-
-
AC Test Condition Add : 5pF Test Load
tCLZ Value Change : 5ns - > 10ns
03
Changed Logo
Apr.30.2001
Final
-
HYUNDAI -> hynix
This document is a general product description and is subject to change without notice. Hynix
responsibility for use of circuits described. No patent licenses are implied.
Rev 03 / Apr. 2001
Electronics does not assume any
Hynix Semiconductor
GM76C256C Series
DESCRIPTION
FEATURES
The GM76C256C is a high-speed, low power and
32,786 X 8-bits CMOS Static Random Access
·
·
·
·
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Low power consumption
Battery backup(L/LL-part)
- 2.0V(min.) data retention
Standard pin configuration
- 28 pin 600mil PDIP
- 28 pin 330mil SOP
- 28 pin 8x13.4 mm TSOP-I
(Standard)
Memory fabricated using
Hynix's high
performance CMOS process technology. It is
suitable for use in low voltage operation and
battery back-up application. This device has a
data retention mode that guarantees data to
remain valid at the minimum power supply
voltage of 2.0 volt.
·
Product
No.
GM76C256C
GM76C256CE
Voltage
(V)
Speed
(ns)
55/70/85
55/70/85
Operation
Current(mA)
Standby Current(uA)
Temperature
(°C)
0~70(Normal)
-25~85(Extended)
L
LL
20
30
5.0
5.0
10
10
40
60
Note 1. Current value is max.
PIN CONNECTION
Vcc
A14
A12
A7
1
2
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A12
A7
Vcc
/WE
A13
A8
1
2
28
27
26
25
24
23
22
21
20
19
18
17
16
15
/WE
A13
A8
/OE
A11
A9
A10
3
1
2
28
27
26
25
24
23
22
21
20
19
18
17
16
15
3
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
Vss
I/O3
I/O2
I/O1
A0
A6
4
A6
4
3
A5
A9
5
A5
A9
5
A8
4
A4
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
6
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
A4
6
A13
/WE
Vcc
A14
A12
A7
5
A3
7
A3
7
6
A2
8
A2
7
8
A1
8
9
A1
9
9
A0
A0
10
11
12
13
14
10
11
12
13
14
10
11
12
13
14
I/O1
I/O2
I/O3
Vss
I/O1
I/O2
I/O3
Vss
A6
A5
A4
A1
A3
A2
PDIP
SOP
TSOP-I(Standard)
PIN DESCRIPTION
BLOCK DIAGRAM
ROW DECODER
I/O1
A0
Pin Name
Pin Function
Chip Select
Write Enable
/CS
/WE
MEMORY ARRAY
512x512
/OE
Output Enable
Address Inputs
Data Input/Output
Power(+5.0V)
Ground
A0 ~ A14
I/O1 ~ I/O8
Vcc
A14
I/O8
/CS
Vss
/OE
/WE
Rev 03 / Apr. 2000
2
GM76C256C Series
ORDERING INFORMATION
Part No.
GM76C256CL
GM76C256CLL
Speed
Power
L-part
LL-part
L-part
LL-part
L-part
LL-part
L-part
LL-part
L-part
LL-part
L-part
Temp
Package
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
PDIP
PDIP
PDIP
PDIP
SOP
SOP
SOP
SOP
0 to 70°C
0 to 70°C
-25 to 85°C
-25 to 85°C
0 to 70°C
0 to 70°C
-25 to 85°C
-25 to 85°C
0 to 70°C
0 to 70°C
-25 to 85°C
-25 to 85°C
GM76C256CLE
GM76C256CLLE
GM76C256CLFW
GM76C256CLLFW
GM76C256CLEFW
GM76C256CLLEFW
GM76C256CLT
GM76C256CLLT
GM76C256CLET
GM76C256CLLET
TSOP-I Standard
TSOP-I Standard
TSOP-I Standard
TSOP-I Standard
LL-part
ABSOLUTE MAXIMUM RATING (1)
Symbol
Vcc, VIN, VOUT
TA
Parameter
Power Supply, Input/Output Voltage
Rating
-0.3 to 7.0
0 to 70
-25 to 85
-65 to 150
1.0
Unit
V
°C
°C
°C
Operating Temperature
GM76C256C
GM76C256CE
TSTG
PD
Storage Temperature
Power Dissipation
W
IOUT
TSOLDER
Data Output Current
Lead Soldering Temperature & Time
50
260 ·10
mA
°C·sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Symbol
Vcc
Vss
VIH
VIL
Parameter
Power Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
-0.3(1)
Typ.
5.0
0
-
-
Max.
5.5
0
Vcc+0.3
0.8
Unit
V
V
V
V
Note
1. VIL = -3.0V for pulse width less than 50ns
TRUTH TABLE
/CS
H
L
L
L
/WE /OE
Mode
Standby
Output Disabled High-Z
I/O Operation
High-Z
X
H
H
L
X
H
L
Read
Write
Data Out
Data In
X
Note
1. H=VIH, L=VIL, X=Don't Care
Rev 03 / Apr. 2000
2
GM76C256C Series
DC CHARACTERISTICS
Vcc = 5V ±10%, TA = 0°C to 70°C (Normal)/-25°C to 85°C (Extended), unless otherwise specified.
Symbol
ILI
ILO
Parameter
Input Leakage Current
Output Leakage Current
Test Condition
Vss < VIN < Vcc
Min. Typ. Max. Unit
-1
-1
-
-
1
1
uA
uA
Vss < VOUT < Vcc, /CS = VIH or
/OE = VIH or /WE = VIL
/CS = VIL, VIN = VIH or VIL,
VIN = VIH or VIL, II/O = 0mA
/CS = VIL, VIN = VIH or VIL,
Min. Duty Cycle = 100%, II/O = 0mA
/CS= VIH
Icc
Operating Power Supply
Current
Average Operating Current
-
-
-
-
-
-
10
70
1
mA
mA
mA
ICC1
ISB
TTL Standby Current
(TTL Inputs)
VIN = VIH or VIL
ISB1
CMOS Standby Current
(CMOS Inputs)
/CS > Vcc - 0.2V,
VIN > Vcc - 0.2V or
VIN < Vss + 0.2V
L
-
-
-
-
-
-
-
-
-
-
-
40
20
60
30
0.4
-
uA
uA
uA
uA
V
LL
LE
LLE
VOL
VOH
Output Low Voltage
Output High Voltage
IOL = 2.1mA
IOH = -1.0mA
2.4
V
Note : Typical values are at Vcc =5.0V, TA = 25°C
AC CHARACTERISTICS(I)
Vcc = 5V ±10%, TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) unless otherwise specified.
-55
Max. Min.
-70
Max. Min
-85
Max.
#
Symbol
Parameter
Unit
Min.
READ CYCLE
1
2
3
4
5
6
7
8
9
tRC
tAA
tACS
tOE
tCLZ
tOLZ
tCHZ
tOHZ
tOH
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Out Disable to Output in High Z
Output Hold from Address Change
55
-
-
-
70
-
-
-
85
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
55
55
30
-
70
70
35
-
85
85
45
-
-
-
-
10
5
0
0
5
10
5
0
0
5
10
5
0
0
5
-
-
-
20
20
-
30
30
-
30
30
-
WRITE CYCLE
10 tWC
11 tCW
12 tAW
13 tAS
14 tWP
15 tWR
16 tWHZ
17 tDW
18 tDH
19 tOW
Write Cycle Time
55
50
50
0
40
0
0
25
0
-
-
-
-
-
-
20
-
-
-
70
65
65
0
50
0
0
30
0
-
-
-
-
-
-
25
-
-
-
85
75
75
0
60
0
0
40
0
-
-
-
-
-
-
30
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Selection to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
5
5
5
Rev 03 / Apr. 2000
3
GM76C256C Series
AC TEST CONDITIONS
TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) unless otherwise specified.
Parameter
Value
Input Pulse Level
Input Rise and Fall Time
0.8V to 2.4V
5ns
Input and Output Timing Reference Level
1.5V
Output Load
tCLZ,tOLZ,tCHZ,tOHZ,tWHZ,tOW
Others
CL = 5pF + 1TTL Load
CL = 100pF + 1TTL Load
AC TEST LOADS
TTL
CL(1)
Note : Including jig and scope capacitance
CAPACITANCE
TA = 25°C, f = 1.0MHz
Symbol
CIN
CI/O
Parameter
Input Capacitance
Input /Output Capacitance
Condition
VIN = 0V
VI/O = 0V
Max.
6
8
Unit
pF
pF
Note : These parameters are sampled and not 100% tested
Rev 03 / Apr. 2000
4
GM76C256C Series
TIMING DIAGRAM
READ CYCLE 1
tRC
ADDR
OE
tAA
tOE
tOH
tOLZ
CS
tACS
tCLZ
tOHZ
tCHZ
High-Z
Data
Out
Data Valid
Note(READ CYCLE):
1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and arenot
referenced to output voltage levels.
2. At any given temperature and voltage condition, tCHZ max. is less than tCLZ min. both for a given device
and from device to device.
3. /WE is high for the read cycle.
READ CYCLE 2
tRC
ADDR
tAA
tOH
tOH
Data
Out
Previous Data
Data Valid
Note(READ CYCLE):
1. /WE is high for the read cycle.
2. Device is continuously selected /CS= VIL.
3. /OE =VIL.
Rev 03 / Apr. 2000
5
GM76C256C Series
WRITE CYCLE 1(/OE Clocked)
tWC
ADDR
OE
tAW
tCW
CS
tAS
tWR
tWP
WE
tDW
tDH
Data Valid
Data In
tOHZ
Data
Out
WRITE CYCLE 2 (/OE Low Fixed)
tWC
ADDR
tAW
tCW
tWR
CS
tAS
tWP
WE
tDW
tDH
Data Valid
tOW
Data In
tWHZ
(8)
(7)
Data
Out
Rev 03 / Apr. 2000
6
GM76C256C Series
Notes(WRITE CYCLE):
1. A write occurs during the overlap of a low /CS and a low /WE. A write begins at the latest transition
among /CS going low and /WE going low: A write ends at the earliest transition among /CS going high
and /WE going high. tWP is measured from the beginning of write to the end of write.
2. tCW is measured from the later of /CS going low to the end of write .
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR is applied in case a write ends as /CS,
or /WE going high.
5. If /OE and /WE are in the read mode during this period, and the I/O pins are in the output low-Z state,
input of opposite phase of the output must not be applied because bus contention can occur.
6. If /CS goes low simultaneously with /WE going low, or after /WE going low, the outputs remain in high
impedance state.
7. DOUT is the same phase of the latest written data in this write cycle.
8. DOUT is the read data of the new address.
DATA RETENTION CHARACTERISTIC
TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) unless otherwise specified.
Symbol
VDR
Parameter
Vcc for Data Retention
Test Condition
CS>Vcc-0.2V,
VIN > Vcc - 0.2V or VIN < Vss + 0.2V
Min
2.0
Typ
-
Max
-
Unit
V
ICCDR
Data Retention Current
Vcc=3.0V,
L
-
-
-
-
0
1
0.5
1
0.5
-
15
7
20
10
-
uA
uA
uA
uA
ns
/CS>Vcc - 0.2V,
VIN > Vcc - 0.2V or
VIN < Vss + 0.2V
See Data Retention
LL
LE
LLE
tCDR
Chip Deselect to Data
Retention Time
tR
Operating Recovery Time
Timing Diagram
tRC(2)
-
-
ns
Notes
1. Typical values are under the condition of TA = 25 °C.
2. tRC is read cycle time.
DATA RETENTION TIMING DIAGRAM
DATA RETENTION MODE
VCC
4.5V
tCDR
tR
2.2V
VDR
CS>VCC-0.2V
CS
VSS
Rev 03 / Apr. 2000
7
GM76C256C Series
PACKAGE INFORMATION
28pin 600mil Dual In-Line Package(Blank)
MAX.
UNIT : INCH(mm)
MIN.
1.467(37.262)
1.447(36.754)
0.600(15.240)BSC
0.065(1.650)
0.050(1.270)
0.090(2.286)
0.070(1.778)
0.550(13.970)
0.530(13.462)
0.155(3.937)
0.145(3.683)
0.035(0.889)
0.020(0.508)
0.140(3.556)
3 deg
11 deg
0.014(0.356)
0.021(0.533)
0.015(0.381)
0.120(3.048)
0.100(2.54)BSC
0.008(0.200)
28pin 330mil Small Outline Package(FW)
MAX
MIN.
UNIT : INCH(mm)
0.346(8.788)
0.338(8.585)
0.480(12.192)
0.460(11.684)
0.110(2.794)
0.094(2.388)
0.728(18.491)
0.720(18.288)
0.012(0.305)
0.008(0.203)
0.014(0.356)
0.002(0.051)
0.050(1.270)
0.030(0.762)
0.050(1.270)BSC
0.020(0.508)
0.014(0.356)
Rev 03 / Apr. 2000
8
GM76C256C Series
28pin 8x13.4mm Thin Small Outline Package Standard(T)
MAX.
MIN.
UNIT : INCH(mm)
0.468(11.9)
0.460(11.7)
0.536(13.6)
0.520(13.2)
0.319(8.1)
0.311(7.9)
0.040(1.02)
0.036(0.91)
0.008(0.20)
0.002(0.05)
0.008(0.2)
0.027(0.7)
0.022(0.55 BSC)
0.004(0.1)
0.012(0.3)
Rev 03 / Apr. 2000
9
GM76C256C Series
MARKING INFORMATION
Package
Marking Example
H
Y
M
y
U
7
N
6
D
C
A
2
I
G
5
6
C
c
c
-
s
s
t
PDIP
y
w
w
K
O
R
E
A
H
Y
M
y
U
7
N
6
D
C
A
2
I
G
5
6
C
E
c
c
F
W
s
s
t
SOP
y
w
w
K
O
R
A
H
Y
M
y
U
7
N
6
D
C
A
2
I
G
5
6
C
E
c
c
T
s
s
t
TSOP-I
y
w
w
K
O
R
A
Index
• HYUNDAI
• KOREA
• GM76C256C
• cc
: Hynix Logo
: Origin Country
: Part Name
: Power Consumption
- L
- LL
: Low Power
: Low Low Power
• Blank / FW / T
: Package Type
- Blank
- FW
: DIP
: SOP
: TSOP-I
- T
• ss
• t
: Speed
- 55
: 55ns
: 70ns
- 70
: Temperature
- Blank
- E
: Commercial ( 0 ~ 70 °C )
: Extended ( -25 ~ 85 °C )
• yy
• ww
: Year ( ex : 00 = year 2000, 01 = year 2001 )
: Work Week ( ex : 12 = ww12 )
Note
- Capital Letter
- Small Letter
: Fixed Item
: Non-fixed Item
Rev 03 / Apr. 2000
10
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