H5GQ2H24AFR-T2C [HYNIX]
2Gb (64Mx32) GDDR5 SGRAM;
| 型号： | H5GQ2H24AFR-T2C |
| 厂家： | 
HYNIX SEMICONDUCTOR |
| 描述： | 2Gb (64Mx32) GDDR5 SGRAM 双倍数据速率 |
| 文件： | 总172页 (文件大小：2219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
H5GQ2H24AFR
2Gb (64Mx32) GDDR5 SGRAM
H5GQ2H24AFR
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
1
H5GQ2H24AFR
Revision History
Revision
History
Date
Remark
0.0
0.1
0.2
0.3
Initial Datasheet Released.
Sep. 2011
Oct. 2011
Oct. 2011
Nov. 2011
Preliminary
Preliminary
Preliminary
Preliminary
Updated MR9 table on page 63.
Updated table 7 Bank Groups on page 18
Updated Operating Information on page 6
Updated POD135 specification on page 127-130
1.0
1.1
1.2
Revision 1.0 released
Nov. 2011
Nov. 2011
Nov. 2011
- Updated AC parameter value on page 136-150
- Updated IDD Specification value on page 134-135
- Updated temperature sensor on page 122
Updated IDD Specification value (x16 mode) on page
134-135
Updated WLmrs and CLmrs on page 43
Updated CRCWL and CRCRL on page 53
Updated capacitance value on page 125
Updated thermal characteristics value on page 125
Corrected Revision ID form 0110 to 0011 on page 14
Corrected values in Temperature Sensor table on page 122
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
2
H5GQ2H24AFR
TABLE OF CONTENTS
FEATURES........................................................................................................................................................5
FEATURES..............................................................................................................................................5
FUNCTIONAL DESCRIPTION....................................................................................................................5
DEFINITION OF SINGLE STATE TERMINOLOGY....................................................................................................7
CLOCKING..........................................................................................................................................................8
INITIALIZATION................................................................................................................................................10
POWER UP SEQUENCE...........................................................................................................................10
INITIALIZATION WITH STABLE POWER..................................................................................................11
VENDOR ID...........................................................................................................................................13
ADDRESS.........................................................................................................................................................15
ADDRESSING.........................................................................................................................................15
ADDRESS BUS INVERSION(ABI)..............................................................................................................16
BAND GROUP........................................................................................................................................18
TRAINING........................................................................................................................................................21
INTERFACE TRAINING SEQUENCE..........................................................................................................21
ADDRESS TRAINING..............................................................................................................................22
WCK2CK TRAINING...............................................................................................................................25
READ TRAINING...................................................................................................................................32
WRITE TRAINING.................................................................................................................................38
MODE REGISTER..............................................................................................................................................41
Mode REGISTER 0(MR0).......................................................................................................................42
Mode REGISTER 1(MR1).......................................................................................................................45
Mode REGISTER 2(MR2).......................................................................................................................48
Mode REGISTER 3(MR3).......................................................................................................................50
Mode REGISTER 4(MR4).......................................................................................................................52
Mode REGISTER 5(MR5).......................................................................................................................55
Mode REGISTER 6(MR6).......................................................................................................................57
Mode REGISTER 7(MR7).......................................................................................................................60
Mode REGISTER 9(MR9).......................................................................................................................63
Mode REGISTER 15(MR15)....................................................................................................................64
OPERATION......................................................................................................................................................65
COMMAND.............................................................................................................................................65
DESELECT.............................................................................................................................................67
NO OPERATION.....................................................................................................................................67
MODE REGISTER SET.............................................................................................................................67
ACTIVATION..........................................................................................................................................68
BANK RESTRITIONS...............................................................................................................................70
WRITE (WOM).......................................................................................................................................72
WRITE DATA MAS(DM)...........................................................................................................................81
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
3
H5GQ2H24AFR
READ....................................................................................................................................................89
DQ PREAMBLE .....................................................................................................................................98
READ AND WRITE DATA BUS INVERSION (DBI).......................................................................................100
ERROR DETECTION CODE.....................................................................................................................102
PRECHARGE........................................................................................................................................106
AUTO PRECHARGE...............................................................................................................................107
REFRESH.............................................................................................................................................107
SELF REFRESH....................................................................................................................................109
POWER-DOWN....................................................................................................................................112
COMMAND TRUTH TABLE.....................................................................................................................113
RDQS MODE........................................................................................................................................117
CLOCK FREQUENCY CHANGE SEQUENCE..............................................................................................119
DYNAMIC VOLTAGE SWITCHING(DVS).................................................................................................120
.......................................................................................................................122
DUTY CYCLE CORRECTOR....................................................................................................................123
OPERATING CONDITIONS................................................................................................................................125
Absolute Maximum Ratings...................................................................................................................125
AC & DC Characteristics........................................................................................................................127
CLOCK TO DATA TIMING SENSITIVITY..................................................................................................153
PACKAGE SPECIFICATION................................................................................................................................156
BALL-OUT...............................................................................................................................................156
SIGNALS.................................................................................................................................................158
ON DIE TERMINATION(ODT)....................................................................................................................161
PACKAGE DIMENSIONS...........................................................................................................................162
MIRROR FUNCTION(MF) ENABLE AND X16 MODE ENABLE.................................................................................163
BOUNDARY SCAN............................................................................................................................................168
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
4
H5GQ2H24AFR
FEATURES
FUNCTIONAL DESCRIPTION
•
•
Single ended interface for data, address and command
The GDDR5 SGRAM is a high speed dynamic
Quarter data‐rate differential clock inputs CK/CK# for
ADR/CMD
random‐access memory designed for applications
requiring high bandwidth. GDDR5 devices contain
the following number of bits:
•
Two half data‐rate differential clock inputs WCK/
WCK#, each associated with two data bytes (DQ, DBI#,
EDC)
•
•
•
•
•
•
Double Data Rate (DDR) data (WCK)
Single Data Rate (SDR) command (CK)
Double Data Rate (DDR) addressing (CK)
16 internal banks
2Gb has 2,147,483,648 bits and sixteen banks
The GDDR5 SGRAM uses
a
8n prefetch
4 bank groups for tCCDL = 3 tCK
8n prefetch architecture: 256 bit per array read or write
access
architecture and DDR interface to achieve high‐
speed operation. The device can be configured to
operate in x32 mode or x16 (clamshell) mode. The
mode is detected during device initialization. The
GDDR5 interface transfers two 32 bit wide data
words per WCK clock cycle to/from the I/O pins.
Corresponding to the 8n‐prefetch a single write or
read access consists of a 256 bit wide, two CK clock
cycle data transfer at the internal memory core and
eight corresponding 32 bit wide one‐half WCK clock
cycle data transfers at the I/O pins.
•
•
•
•
Burst length: 8 only
Programmable CAS latency: 5 to 20 tCK
Programmable WRITE latency: 1 to 7 tCK
WRITE Data mask function via address bus (single/
double byte mask)
•
Data bus inversion (DBI) & address bus inversion
(ABI)
•
•
Input/output PLL on/off mode
Address training: address input monitoring by DQ
pins
•
WCK2CK clock training with phase information by
EDC pins
The GDDR5 SGRAM operates from a differential
clock CK and CK#. Commands are registered at
every rising edge of CK. Addresses are registered at
every rising edge of CK and every rising edge of
CK#.
GDDR5 replaces the pulsed strobes (WDQS &
RDQS) used in previous DRAMs such as GDDR4
with a free running differential forwarded clock
(WCK/WCK#) with both input and output data
registered and driven respectively at both edges of
the forwarded WCK.
•
•
•
Data read and write training via READ FIFO
READ FIFO pattern preload by LDFF command
Direct write data load to READ FIFO by WRTR
command
•
•
Consecutive read of READ FIFO by RDTR command
Read/Write data transmission integrity secured by
cyclic redundancy check (CRC‐8)
READ/WRITE EDC on/off mode
Programmable EDC hold pattern for CDR
Programmable CRC READ latency = 0 to 3 tCK
Programmable CRC WRITE latency = 7 to 14 tCK
Low Power modes
•
•
•
•
•
•
•
•
•
•
•
•
RDQS mode on EDC pin
Optional on‐chip with read‐out
Auto & self refresh modes
Read and write accesses to the GDDR5 SGRAM are
burst oriented; an access starts at a selected location
and consists of a total of eight data words. Accesses
begin with the registration of an ACTIVE command,
Auto precharge option for each burst access
32ms, auto refresh (16k cycles)
controlled self refresh rate
On‐die termination (ODT); nominal values of 60 ohm which is then followed by a READ or WRITE
and 120 ohm
command. The address bits registered coincident
with the ACTIVE command and the next rising CK#
edge are used to select the bank and the row to be
accessed. The address bits registered coincident
with the READ or WRITE command and the next
rising CK# edge are used to select the bank and the
column location for the burst access.
•
•
Pseudo open drain (POD‐15) compatible outputs (40
ohm pulldown, 60 ohm pullup)
ODT and output drive strength auto‐calibration with
external resistor ZQ pin (120 ohm)
Programmable termination and driver strength offsets
Selectable external or internal VREF for data inputs;
programmable offsets for internal VREF
Separate external VREF for address / command inputs
Vendor ID, FIFO depth and Density info fields for
identification
•
•
•
•
•
x32/x16 mode configuration set at power‐up with EDC
pin
•
•
•
Mirror function with MF pin
Boundary scan function with SEN pin
1.6V / 1.5V / 1.35V +/‐ (3%xVDD)V supply for device
operation (VDD)
•
•
1.6V / 1.5V / 1.35V +/‐ (3%xVDDQ)V supply for I/O
interface (VDDQ)
170 ball BGA package
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
5
H5GQ2H24AFR
ORDERING INFORMATION
Part No
Power Supply
VDD/VDDQ = 1.5
VDD/VDDQ = 1.35V
VDD/VDDQ = 1.5
VDD/VDDQ = 1.35
VDD/VDDQ = 1.5
WCK Frequency
3.00GHz
Max Data Rate
6.0Gbps/pin
5.0Gbps/pin
5.0Gbps/pin
4.0Gbps/pin
4.0Gbps/pin
Interface
POD_15
POD_135
POD_15
POD_135
POD_15
H5GQ2H24AFR-R0C
2.50GHz
2.50GHz
H5GQ2H24AFR-T2C
H5GQ2H24AFR-T0C
2.00GHz
2.00GHz
Note1) Above Hynix P/N's are Lead-free, RoHS Compliant and Halogen-free.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
6
H5GQ2H24AFR
DEFINITION OF SIGNAL STATE TERMINOLOGY
GDDR5 SGRAM will be operated in both ODT Enable (terminated) and ODT Disable (unterminated)
modes. For highest data rates it is recommended to operate in the ODT Enable mode. ODT Disable mode
is designed to reduce power and may operate at reduced data rates. There exist situations where ODT
Enable mode can not be guaranteed for a short period of time, i.e. during power up.
Following are four terminologies defined for the state of a device (GDDR5 SGRAM or controller) pin dur‐
ing operation. The state of the bus will be determined by the combination of the device pins connected to
the bus in the system. For example in GDDR5 it is possible for the SGRAM pin to be tristated while the
controller pin is High or ODT. In both cases the bus would be High if the ODT is enabled. For details on
the GDDR5 SGRAM pins and their function see ?$paratext>? on page 156 and ?$paratext>? on page 158 in
the section entitled “PACKAGE SPECIFICATION”
Device pin signal level:
•
•
•
•
High: A device pin is driving the Logic “1” state.
Low: A device pin is driving the Logic “0” state.
Hi‐Z: A device pin is tristate.
ODT: A device pin terminates with ODT setting, which could be terminating or tristate depending on Mode
Register setting.
Bus signal level:
•
High: One device on bus is High and all other devices on bus are either ODT or Hi‐Z. The voltage level on the bus
would be nominally VDDQ
•
Low: One device on bus is Low and all other devices on bus are either ODT or Hi‐Z. The voltage level on the bus
would be nominally VOL(DC) if ODT was enabled, or VSSQ if Hi‐Z.
•
•
Hi‐Z: All devices on bus are Hi‐Z. The voltage level on bus is undefined as the bus is floating.
ODT: At least one device on bus is ODT and all others are Hi‐Z. The voltage level on the bus would be nominally
VDDQ.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
7
H5GQ2H24AFR
CLOCKING
The GDDR5 SGRAM operates from a differential clock CK and CK#. Commands are registered at every
rising edge of CK. Addresses are registered at every rising edge of CK and every rising edge of CK#.
GDDR5 uses a DDR data interface and an 8n‐prefetch architecture. The data interface uses two differen‐
tial forwarded clocks (WCK/WCK#). DDR means that the data is registered at every rising edge of WCK
and rising edge of WCK#. WCK and WCK# are continuously running and operate at twice the frequency
of the command/address clock (CK/CK#).
CK#
CK
COMMAND
ADDRESS
WCK#
WCK
DQ*1
Figure 1: GDDR5 Clocking and Interface Relationship
Note : Figure.1 shows the relationship between the data rate of the buses and the clocks and is not a timing diagram.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
8
H5GQ2H24AFR
.
GDDR5 SGRAM
Controller
CMD sampled by CK/CK# as SDR
ADD sampled by CK/CK# as DDR
ADD/CMD centered with CK/CK#
DRAM
CMD/ADD
D
Q
QB
D
Q
core
CMD/ADD
CK/CK#
(1GHz)
WCK2CK
Alignment
Oscillator
PLL
Data Tx/Rx
Q
D
PLL
/2
WCK/WCK#
(2GHz)
To EDC pin
WCK
int
(1GHz)
Clock Phase
Controller
early/late
corelogic
Phase detector/
Phase accumulator
Q
D
DQ [0]‐[7]
(4Gbps)
early/late from
calibration data
Q
D
Receiver
clock
DRAM
core
D
Q
DQ
D
Q
Clock Phase
Controller
For 8 data bits
Figure 2: Block Diagram of an example clock system
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
9
H5GQ2H24AFR
1. INITIALIZATION
1.1. POWER‐UP SEQUENCE
GDDR5 SGRAMs must be powered up and initialized in a predefined manner as shown below. Operational proce-
dures other than those specified may result in undefined operation. The Mode Registers do not have RESET default
values, except for ABI#, ADR/CMD termination, and the EDC hold pattern. If the mode registers are not set during the
initialization sequence, it may lead to unspecified operation.
Step
1
2
3
4
5
6
Apply power to VDD
Apply power to VDDQ at same time or after power is applied to VDD
Apply VREFC and VREFD at same time or after power is applied to VDDQ
After power is stable, provide stable clock signals CK/CK#
Assert and hold RESET# low to ensure all drivers are in Hi‐Z and all active terminations are off. Assert and hold NOP command.
Wait a minimum of 200μs.
If boundary scan mode is necessary, SEN can be asserted HIGH to enter boundary scan mode. Boundary scan mode must be
7
entered directly after power‐up while RESET# is low. Once boundary scan is executed, power‐up sequence should be followed.
Set CKE# for the desired ADR/CMD ODT settings, then bring RESET# High to latch in the logic state of CKE#, t
and t
must
ATH
ATS
be met during this procedure. See Table 1 for the values and logic states for CKE#. The rising edge of RESET# will determine x32
mode or x16 mode depending on the state of EDC1(EDC2 when MF=1). In normal x32 mode, EDC1 has to be sustained HIGH until
RESET# is HIGH. See Table 57 for the values and logic states for EDC1(EDC2 when MF=1).
8
9
Bring CKE# Low after t
is satisfied
ATH
10 Wait at least 200μs referenced from the beginning of t
ATS
11 Issue at least 2 NOP commands
12 Issue a PRECHARGE ALL command followed by NOP commands until t is satisfied
RP
13 Issue MRS command to MR15. Set GDDR5 SGRAM into address training mode (optional)
14 Complete address training (optional)
15 Issue MRS command to read the Vendor ID
16 Issue MRS command to set WCK01/WCK01# and WCK23/WCK23# termination values
17 Provide stable clock signals WCK01/WCK01# and WCK23/WCK23#
Issue MRS commands to use PLL or not and select the position of a WCK/CK phase detector. The use of PLL and the position of a
phase detector should be issued before WCK2CK training. Issue MRS commands including PLL reset to the mode registers in any
MRD
training.
18
order. t
must be met during this procedure. WLmrs, CLmrs, CRCWL and CRCRL must be programmed before WCK2CK
19 Issue two REFRESH commands followed by NOP until t
is satisfied
RFC
After any necessary GDDR5 training sequences such as WCK2CK training, READ training (LDFF, RDTR) and WRITE training
(WRTR, RDTR), the device is ready for operation.
20
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
10
H5GQ2H24AFR
Table 1 Address and Command Termination
VALUE (OHMS)
CKE# at RESET# high transition
ZQ/2
ZQ
Low
High
( (
) )
( (
) )
( (
) )
V
DD
( (
) )
( (
) )
( (
) )
V
DDQ
( (
) )
( (
) )
( (
) )
V
REFD/C
t
t
ATH
ATS
( (
) )
RESET#
CKE#
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
CK#
CK
( (
) )
( (
) )
( (
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
) )NOP) )
NOP
NOP
PRE
NOP
TRAIN / MRS
( (
CMD
ADR
NOP
A.C.
A.C.
( (
) )
( (
) )
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
TRAIN / MRS
( (
ADR ADR ADR ADR
( (
) )
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
TRAI)N) / MRS
( (
DQ<31:0>,
DBI#<3:0>
( (
) )
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
) )
TRA(IN( / MRS
EDC<3,0>
EDC<2,1>
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
x32
x16
TRAIN / MRS
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
WCK#
WCK
Execution of steps
13‐21 in Power‐up
sequence
All Banks
Precharge
min. 200 μs
min. 200 μs
t
RP
Voltages and
CK stable
Note: A.C. = Any Command
Figure 3: GDDR5 SGRAM Power‐up Initialization
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
11
H5GQ2H24AFR
1.2. Initialization with Stable Power
The following sequence is required for reset subsequent to power‐up initialization. This requires that the
power has been stable within the specified VDD and VDDQ ranges since power‐up initialization (See
Figure 4)
1) Assert RESET# Low anytime when reset is needed.
2) Hold RESET# Low for minimum 100ns. Assert and hold NOP command.
3) Set CKE# for the desired ADR/CMD ODT settings, then bring RESET# High to latch in the logic state of
CKE#; tATS and tATH must be met during this procedure. Keep EDC1 (MF=0) / EDC2 (MF=1) at the same
logic level as during power‐up initialization as device functionality is not guaranteed if the I/O width has
changed.
4) Continue with step 9 of the power‐up initialization sequence.
( (
) )
( (
) )
( (
) )
V
, V
DD DDQ
( (
) )
( (
) )
( (
) )
V
REFD/C
t
t
ATH
ATS
( (
) )
RESET#
CKE#
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
CK#
CK
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
( (
) )
( (
) )
( (
) )
( (
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
) )NOP) )
NOP
NOP
PRE
NOP
TRAIN / MRS
( (
CMD
ADR
NOP
A.C.
A.C.
( (
) )
( (
) )
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
TRAIN / MRS
( (
ADR ADR ADR ADR
( (
) )
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
TRAI)N) / MRS
( (
DQ<31:0>,
DBI#<3:0>
( (
) )
) )
( (
( (
)
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
) )
TRA(IN( / MRS
EDC<3:0>
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
( (
) )
WCK#
WCK
Execution of steps
13‐21 in Power‐up
sequence
All Banks
Precharge
min. 100 ns
min. 200 μs
t
RP
Notes: 1. A.C. = Any Command
2. Device functionality is not guaranteed if x32/x16 mode is not the same as during power‐up initialization.
Figure 4: Initialization with Stable Power
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
12
H5GQ2H24AFR
1.2. VENDOR ID
GDDR5 SGRAMs are required to include a Vendor ID feature that allows the controller to receive informa‐
tion from the GDDR5 SGRAM to differentiate between different vendors and different devices using a
software algorithm.
When the Vendor ID function is enabled the GDDR5 SGRAM will provide its Manufacturers Vendor Code
on bits [3:0] as shown in Table 2; Revision Identification on bits [7:4]; Density on bits [9:8] ; FIFO Depth on
bits [11:10] as shown in Table 3 & Table4. Bits [15:12] are RFU.
Vendor ID is part of the INFO field of Mode Register 3 (MR3) and is selected by issuing a MODE REGIS‐
TER SET command with MR3 bit A6 set to 1, and bit A7 set to 0. MR3 bits A0‐A5 and A8‐A11 are set to the
desired values.
The Vendor ID will be driven onto the DQ bus after the MRS command that sets bits A6 to 1 and A7 to 0.
The DQ bus will be continuously driven until an MRS command sets MR3 A6 and A7 back to 0 to disable
the INFO field or to another valid state for the INFO field if the INFO field includes support for additional
vendor specific information. The DQ bus will be in ODT state after t
(max). The code can be sam‐
WRIDOFF
pled by the controller after waiting t
(max) and before t
(min). DBI is not enabled or
WRIDON
WRIDOFF
ignored during all Vendor ID operations. Table 4 shows the mapping of the Vendor ID info to the physical
DQs. The 16 bits of Vendor ID are sent on Byte 0 and 2 when MF=0. When MF=1 the 16 bits are sent on
Byte 1 and 3. Optionally the vendor may replicate the data on the other 2 bytes when in x32 mode. Byte 0
would be replicated on Byte 1 and Byte 2 would be replicated on Byte 3 when MF=0. When MF=1, Byte 1
would be replicated on Byte 0 and Byte 3 would be replicated on Byte 2.
TABLE 2. Manufacturers Vendor Code
Manufacturers ID
Bit 3
0
Bit 2
0
Bit 1
0
Bit 0
0
Name of Company
Reserved
Samsung
Qimonda
Elpida
0
1
0
0
0
1
2
0
0
1
0
3
0
0
1
1
4
0
1
0
0
Etron
5
0
1
0
1
Nanya
6
0
1
1
0
Hynix
7
0
1
1
1
ProMOS
Winbond
ESMT
8
1
0
0
0
9
1
0
0
1
A
B
C
D
E
F
1
0
1
0
Reserved
Reserved
Reserved
Reserved
Reserved
Micron
1
0
1
1
1
1
0
0
1
1
0
1
1
1
1
0
1
1
1
1
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
13
H5GQ2H24AFR
Table 3 Revision ID & Density & FIFO Depth
Revision ID
Density
FIFO
Bit 7
Bit 6
Bit 5
Bit 4
Bit 9
Bit 8
Bit 11
Bit 10
0
0
1
1
1
0
1
0
Table 4 Vendor ID to DQ mapping
Bit
7
6
5
4
3
2
1
0
MF=0
MF=1
Feature
DQ7
DQ6
DQ30
DQ5
DQ29
DQ4
DQ28
DQ3
DQ27
DQ2
DQ26
DQ1
DQ25
DQ0
DQ24
DQ31
Revision Identification
Manufacturers Vendor Code
Bit
15
14
13
12
DQ20
DQ12
Density
11
10
9
8
MF=0
MF=1
Feature
DQ23
DQ15
DQ22
DQ14
RFU
DQ21
DQ13
DQ19
DQ11
DQ18
DQ10
DQ17
DQ9
DQ16
DQ8
FIFO Depth
Density
CK#
CK
CMD NOP
MRS
NOP
NOP
NOP
NOP
MRS
NOP
NOP
NOP
NOP
BA0‐BA3
MRACode
Code
MRACode
Code
A2‐A5
A8
A7
A11
A6
Code
Code
A9,A10
A0,A1
Code Code
Code Code
tWRIDON(max)
tWRIDOFF(min)
DQ
Vendor ID + Rev Code
Donʹt Care
MRA = Mode Register Address; Code = Opcode to be loaded
Figure 5: Vendor ID Timing Diagram
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
14
H5GQ2H24AFR
2. ADDRESS
2.1. ADDRESSING
GDDR5 SGRAMs use a double data rate address scheme to reduce pins required on the GDDR5 SGRAM
as shown in Table 5. The addresses should be provided to the GDDR5 SGRAM in two parts; the first half is
latched on the rising edge of CK along with the command pins such as RAS#, CAS# and WE#; the second
half is latched on the next rising edge of CK#.
The use of DDR addressing allows all address values to be latched in at the same rate as the SDR com‐
mands. All addresses related to command access have been positioned for latching on the initial rising
edge for faster decoding.
Table 5 Address Pairs
Clock
Address Pins
A12
Rising CK
Rising CK#
BA3
A3
BA2
A4
BA1
A5
BA0
A2
A11
A6
A10
A0
A9
A1
A8
A7
RFU
Note: Address pin A12 is required only for 2G density.
GDDR5 addressing includes support for 2G density. For all densities two modes are supported (x32 mode
or x16 mode). x32 and x16 modes differ only in the number of valid column addresses, as shown in Table6.
Table 6 Addressing Scheme
2G
x32 mode
A0~A12
A0~A5
BA0~BA3
A8
x16 mode
A0~A12
A0~A6
BA0~BA3
A8
Row address
Column address
Bank address
Autoprecharge
Page Size
2K
2K
Refresh
16K/32ms
1.9us
16K/32ms
1.9us
Refresh period
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
15
H5GQ2H24AFR
2.2. ADDRESS BUS INVERSION (ABI)
Address Bus Inversion (ABI) reduces the power requirements on address pins, as the no. of address lines
driving a low level can be limited to 4 (in case A12 is not wired) or 5 (in case A12 is wired).
The Address Bus Inversion function is associated with the electrical signalling on the address lines
between a controller and the GDDR5 SGRAM, regardless of whether the information conveyed on the
address lines is a row or column address, a mode register op‐code, a data mask, or any other pattern.
The ABI# input is an active Low double data rate (DDR) signal and sampled by the GDDR5 SGRAM at the
rising edge of CK and the rising edge of CK# along with the address inputs.
Once enabled by the corresponding ABI Mode Register bit, the GDDR5 SGRAM will invert the pattern
received on the address inputs in case ABI# was sampled Low, or leave the pattern non‐inverted in case
ABI# was sampled High, as shown in Figure 6.
8 (9)
8 (9)
Address
Pins
to
DRAM
core
ABI#
from Mode Register:
0 = enabled
1 = disabled
NNoteo: tbeus: wBiudsthwisi8dwthheinsA812w/RhFeUnpAin1is2niost pnroestepntr,easnedn9tw, ahenndA912w/RhFUenpiAn i1s2priessepnrtesent.
Figure 6: Example of Address Bus Inversion Logic
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
16
H5GQ2H24AFR
The flow diagram in Figure 7 illustrates the ABI operation. The controller decides whether to invert or not
invert the data conveyed on the address lines. The GDDR5 SGRAM has to perform the reverse operation
based on the level of the ABI# pin. Address input timing parameters are only valid with ABI being enabled
and a maximum of 4 address inputs driven Low.
Data to be sent
on address lines
Controller
Determine ’0’
count
’0’ count
> 4 ?
No
Yes
ABI# = ’H’
Don’t invert
ABI# = ’L’
Invert
ABI# = ’H’
Don’t invert
ABI# = ’L’
Invert
GDDR5
SGRAM
Data received
on address lines
Figure 7: Address Bus Inversion (ABI) Flow Diagram
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
17
H5GQ2H24AFR
2.3. BANK GROUPS
For GDDR5 SGRAM devices operating at frequencies above a certain threshold, the activity within a bank
group must be restricted to ensure proper operation of the device. The 8 or 16 banks in GDDR5 SGRAMs
are divided into four or eight bank groups. The bank groups feature is controlled by bits A10 and A11 in
Mode Register 3 (MR3). The assignment of the banks to the bank groups is shown in Table 7.
Table 7 Bank Groups
Addressing
BA2 BA1
2G
2G
Bank
BA3
0
BA0
0
16 banks
16 banks
0
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
Group A
Group B
Group C
Group D
Group E
Group F
Group G
Group H
0
1
Group A
Group B
Group C
Group D
2
0
0
3
0
1
4
0
0
5
0
1
6
0
0
7
0
1
8
1
0
9
1
1
10
11
12
13
14
15
1
0
1
1
1
0
1
1
1
0
1
1
These bank groups allow the specification of different command delay parameters depending on whether
back‐to‐back accesses are to banks within one bank group or across bank groups as shown in Table 8.
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
18
H5GQ2H24AFR
Table 8 Command Sequences Affected by Bank Groups
Corresponding AC Timing Parameter
Bank Groups Enabled
Command Sequence
Notes
Bank Groups
Disabled
Accesses to different bank Accesses within the same
groups
bank group
ACTIVE to ACTIVE
WRITE to WRITE
t
t
t
RRDS
CCDS
CCDS
WTRS
RRDS
CCDS
CCDS
WTRS
RRDL
CCDL
CCDL
WTRL
t
t
t
t
t
t
READ to READ
Internal WRITE to READ
READ to PRECHARGE
t
t
t
t
1 tck
t
1
RTPS
RTPL
Note.1 : Parameters tRTPS and tRTPL apply only when READ and PRECHARGE go to the same bank; use tRTPS when BG are
disabled, and tRTPL when BG are enabled.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
19
H5GQ2H24AFR
Back-to-back column accesses based on tCCDL and tCCDS parameters.
Example 1 (Bank Groups disabled): tCCDS = 2 * tCK
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9 T10 T11 T12 T13
CLK
CAS A0
DQ
A1
B0
B1
C0
C1
D0
A0
A1
B0
B1
C0
C1
D0
Example 2: (Bank Groups enabled): tCCDL = 4 * tCK
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9 T10 T11 T12 T13
CLK
CAS A0
DQ
A1
A2
A3
A0
A1
A2
A3
Example 3: (Bank Groups enabled): tCCDS = 2 * tCK
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9 T10 T11 T12 T13
CLK
CAS A0
DQ
B0
A1
B1
C0
D0
C1
A0
B0
A1
B1
C0
D0
C1
Notes:
1) Column accesses are to open banks, and t
2) CL = 0 assumed
has been met.
RCD
3) Ax, Bx, Cx, Dx: accesses to bank groups A, B, C or D, respectively
4) With bank groups enabled, t
is 3t , as programmed in MR3.
CK
CCDL
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
20
H5GQ2H24AFR
3. TRAINING
3.1. INTERFACE TRAINING SEQUENCE
Due to the high data rates of GDDR5, it is recommended that the interfaces be trained to operate with the
optimal timings. GDDR5 SGRAM has features defined which allow for complete and efficient training of
the I/O interface without the use of the GDDR5 SGRAM array. The interface trainings are required for nor‐
mal DRAM functionality unless running in lower frequency modes as described in the low frequency sec‐
tion. Interface timings will only be guaranteed after all required trainings have been executed.
A recommended order of training sequences has been chosen based on the following criteria:
The address training must be done first to allow full access to the Mode Registers. (MRS for address train‐
ing is a special single data rate mode register set guaranteed to work without training). Address input tim‐
ing shall function without training as long as t
are met at the GDDR5 SGRAM.
AS/H
WCK2CK training should be done before read training because a shift in WCK relative to CK will cause a
shift in all READ timings relative to CK.
READ training should be done before WRITE training because optimal WRITE training depends on cor‐
rect READ data.
Initialization
Address Training (optional)
WCK2CK Alignment Training
READ Training
WRITE Training
Start Normal Operation
Figure 8: Interface Training Sequence
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
21
H5GQ2H24AFR
3.2. ADDRESS TRAINING
The GDDR5 SGRAM provides means for address bus interface training. The controller may use the
address training mode to improve the timing margins on the address bus.
Address training mode is entered and exited via the ADT bit in Mode Register 15 (MR15). Mode Register
15 supports the same setup and hold times on the address pins as for commands to allow a safe entry into
address training mode.
Address training mode uses an internal bridge between the GDDR5 SGRAM’s address inputs and DQ/
DBI# outputs. It also uses a special READ command for address capture that is encoded using the SDR
command pins only (CS#,RAS#,CAS#,WE# = L,H,L,H). The address values normally used to encode the
commands will not be interpreted. Once the address training mode has been entered, the address values
registered coincident with this special READ command will be transmitted to the controller on the DQ/
DBI# pins. The controller is then expected to compare the address pattern received to the expected value
and to adjust the address transmit timing accordingly. The procedure may be repeated using different
address pattern and interface timings.
No WCK clock is required for this special READ command operation during address training mode. The
latched addresses are driven out asynchronously.
The only commands allowed during address training mode are this special READ, MRS (e.g. to exit
address training mode) and NOP / DESELECT.
When enabled by the ABI bit in Mode Register 1, address bus inversion (ABI) is effective during address
training mode. It is suggested to train the ABI# pin’s interface timing together with the other address lines.
The timing diagram in Figure 9 illustrates the typical command sequence in address training mode. The
DQ/DBI# output drivers are enabled as long as the ADT bit is set. The minimum spacing between consec‐
utive special READ commands is 2 t
CK.
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
22
H5GQ2H24AFR
CK#
CK
CMD
MRS
NOP
READ (*)
NOP
READ (*)
NOP
READ (*)
NOP
MRS
NOP
NOP
NOP
NOP
MR15
A10=1
ADRx ADRx
ADRy ADRy
ADRz ADRz
MR15
A10=0
ADDR
R
R#
R
R#
R
R#
tMRD
tADR
tADZ
tADR
tADR
Even
DQ
ADRx
ADRy
ADRz
R
R
R
Odd
DQ
ADRx
R#
ADRy
R#
ADRz
R#
Donʹt Care
Notes:
1) READ command encoding: CS# = L, RAS# = H, CAS# = L, WE# = H
2) ADRxR = 1st half of address x, sampled on rising edge of CK;
ADRxR# = 2nd half of address x, sampled on rising edge of CK#
3) Addresses sampled on rising edge of CK are returned on even DQ after tADR;
addresses sampled on rising edge of CK# are returned on odd DQ simultaneously with even DQ
4) DQs are enabled when ADT bit in Mode Register 15 set to 1 (Enter Address Training Mode)
DQs are disabled after tADZ when ADT bit in Mode Register 15 set to 0 (Exit Address Training Mode)
Figure 9: Address Training Timing
Table 9 AC timings in Address Training Mode
Parameter
Symbol
Min
0.5*tCK+0
‐‐
Max
Unit
ns
READ command to data out delay
ADT off to DQ/DBI# in ODT state delay
t
t
0.5*tCK+10
0.5*tCK+10
ADR
ADZ
ns
Table 10 defines the correspondence between address bits and DQ/DBI#. Devices configured to x16 mode
reflect the address on the two bytes being enabled in that mode, which are bytes 0 and 2 for MF=0 and
bytes 1 and 3 for MF=1 configurations. Devices configured to x32 mode reflect the address on the same DQ
as in x16 mode; in addition they are allowed but not required to reflect the address on those bytes that are
disabled in x16 mode, thus reflecting each address twice.
Devices not supporting an RFU pin shall drive a logic High on the DBI# pins.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
23
H5GQ2H24AFR
Table 10 Address to DQ Mapping in Address Training Mode
Address bits registered at rising edge of CK
Output
A12
A8
A11
BA1
DQ18
DQ26
BA2
DQ16
DQ24
BA3
DQ6
BA0
DQ4
A9
A10
DQ0
DQ8
DBI0#
DBI1#
DQ22
DQ30
DQ20
DQ28
DQ2
DQ10
DQ
DQ14
DQ12
Address bits registered at rising edge of CK#
Output
RFU
DBI2#
DBI3#
A7
A6
A5
A4
A3
A2
A1
A0
DQ23
DQ31
DQ21
DQ29
DQ19
DQ27
DQ17
DQ25
DQ7
DQ15
DQ5
DQ13
DQ3
DQ11
DQ1
DQ9
DQ
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
24
H5GQ2H24AFR
3.3. WCK2CK TRAINING
The purpose of WCK2CK training is to align the data WCK clock with the command CK clock to aid in the
GDDR5 SGRAM’s internal data synchronization between the logic clocked by CK/CK# and WCK/WCK#.
This will help to define both Read and Write latencies between the GDDR5 SGRAM and memory control‐
ler. WCK2CK training mode is controlled via MRS.
Before starting WCK2CK training, the following conditions must be met:
•
•
•
CK/CK# clock is stable and toggling
The timing of all address and command pins must be guaranteed
PLL on/off(MR1 bit A7) and PLL delay compensation enable(MR7 bit A2) are set to desired mode before WCK to
CK training is started
•
•
•
•
The desired WCK2CK alignment point (MR6, bit A0) is selected
The EDC hold pattern (MR4, bits A0‐A3) must be programmed to ‘1111’
2 Mode Register bits for internal WCK01 and WCK23 inversion (MR3, bits A2‐A3) must be set to a known state
All banks are idle and no other command execution is in progress
WCK2CK training must be done after any of the following conditions:
•
•
•
•
•
•
Device initialization
Any CLmrs, WLmrs, CRCRL or CRCWL latency change
CK and WCK frequency changes
PLL on/off(MR1 bit A7) and PLL delay compensation mode(MR7 bit A2) changes
Change of the WCK2CK alignment point (MR6, bit A0)
WCK state change from off to toggling, including self refresh exit or exit from power‐down when bit A1 (LP2) in
MR5 is set
Figure 10 and Figure 11 show example WCK2CK training sequences. WCK2CK training is entered via
MRS by setting bit A4 in MR3. This will initiate the WCK divide‐by‐2 circuits associated with WCK01 and
WCK23 clocks in the GDDR5 SGRAM. In case the divide‐by‐2 circuits are at opposite output phases,
which is indicated by opposite “early/late” phases on the EDC pins associated with WCK01 and WCK23
(see below), they may be put in phase by using the WCK01 and WCK23 inversion bits. Alternatively, the
WCK clocks may be put into a stable inactive state for this initialization event to aid in resetting all divid‐
ers to the same output phase as shown in <Link>Figure 11. The challenge of this method is to restart the
WCK clocks in a way that even their first clock edges meet the WCK clock input specification. Otherwise,
divide‐by‐2 circuits for both WCK01 and WCK23 might again have opposite phase alignment.
Figure 12 illustrates how the WCK phase information is derived. The phase detectors (PD) sample the
internally divided‐by‐2 WCK clocks. Only one sample point is shown in the figure for clarity. In reality,
when WCK2CK training mode is enabled, a sample will occur every t and will be translated to the EDC
CK
pins accordingly. If the divided‐by‐2 WCK clock arrives early, then the EDC pin outputs the EDC hold
pattern during the time interval specified in Figure 12. If the divided‐by‐2 WCK clock arrives late, then the
EDC pin outputs the inverted EDC hold pattern during the time interval specified in Figure 12. This is
shown in Table 11.
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
25
H5GQ2H24AFR
CK
CK#
CMD
NOP
NOP
MRS
NOP
NOP
NOP
NOP
MRS
MRS
A.C.
WCK
WCK#
tLK
tMRD
Enter WCK2CK Training
Start WCK2CK
Phase Search
PLL Reset
(PLL on only)
Exit WCK2CK Training
(sets data synchronizers,
rests FIFO pointers)
Figure 10: Example WCK2CK Training Sequence
CK#
CK
CMD
NOP
MRS
NOP
NOP
NOP
NOP
NOP
NOP
MRS
MRS
Valid
WCK
WCK#
tWCK2MRS
tMRSTWCK
tWCK2TR
tLK
tMRD
Enter WCK2CK
Training by MRS
(resets WCK divide‐
by‐2 circuits)
WCK
Restart
Start WCK2CK
Phase Search
Exit WCK2CK
Training by MRS
(Set data synchronizers,
resets FIFO pointers)
PLL Reset
(PLL on only)
Figure 11: Example WCK2CK Training Sequence with WCK Stopping
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H5GQ2H24AFR
CK
1
WCK01/2
WCK23/2
(internal)
‐ tWCK2CK
WCK Early
EDC0
Early
1
2
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
1
1
1
1
EDC2
tWCKTPH
0
WCK01/2
WCK23/2
(internal)
+ tWCK2CK
WCK Late
EDC0
EDC2
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
0
0
0
0
Late
tWCKTPH
WCK01/2
WCK23/2
(internal)
EDC0
EDC2
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
Aligned
3
tWCKTPH
Figure 12: EDC pin Behaviour for WCK2CK Training (assumes ‘1111’ as EDC Hold Pattern)
Table 11 Phase Detector and EDC Pin behavior
WCK/2 value sampled by CK WCK2CK Phase
Data on EDC Pin
EDC hold (‘1111’)
Action
‘1’
‘0’
‘Early’
‘Late’
Increase Delay on WCK
Decrease Delay on WCK
Inverted EDC Hold (‘0000’)
The ideal alignment is indicated by the phase detector output transitioning from “early” to “late” when
the delay of the WCK phase is continuously increased. The WCK phase range for ideal alignment is speci‐
fied by the parameter t
ment point.
; the value(s) vary with the PLL mode (on or off) and the selected align‐
WCK2CKPIN
If enabled, the PLL shall not interfere in the behavior of the WCK2CK training. Significantly moving the
phase and/or stopping the WCK during training may disturb the PLL. It is required to perform a PLL reset
after the WCK2CK training has determined and selected the proper alignment between WCK and CK
clocks. The PLL lock time t must be met before exiting WCK2CK training to guarantee that the PLL is in
LK
lock such that the GDDR5 SGRAM data synchronizers are set upon WCK2CK training exit.
WCK2CK training is exited via MRS by resetting bit A4 in MR3. For proper reset of the data synchronizers
it is required that the WCK and CK clocks are aligned within t
training exit.
at the time of the WCK2CK
WCK2CKSYNC
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H5GQ2H24AFR
After exiting WCK2CK training mode, the WCK phase is allowed to further drift from the ideal alignment
point by a maximum of t
(e.g. due to voltage and temperature variation). Once this WCK phase
WCK2CK
drift exceeds t
the clocks.
(min) or t
(max), it is required to repeat the WCK2CK training and realign
WCK2CK
WCK2CK
WCK2CK alignment at PIN Mode
The WCK and CK phase alignment point can be changed via MRS by setting bit A0 in MR6. In normal
mode, when MR6 A0 is set to ‘0’, the phases of CK and WCK are aligned at CK pins and the end of WCK
tree as shown in Figure 13. On the other hand, when MR6 A0 is set to ‘1’, the phases of CK and WCK are
aligned at the pin as shown in Figure 14. PIN mode is supported up to the max CK clock frequency of
f
, and is an option to reduce the time of WCK2CK training at low frequency.
CKPIN
D
Q
WCK
WCK#
CK
Internal WCK/2
Internal CK
Phase
Detector
CK
CK#
EDC
Figure 13: Normal Mode
D
Q
WCK
WCK#
CK
Internal WCK/2
Phase
Detector
CK
CK#
Internal CK
EDC
Figure 14: Pin Mode
WCK2CK Auto Synchronization
GDDR5 SGRAMs support a WCK2CK automatic synchronization mode that eliminates the need for
WCK2CK training upon power‐down exit. This mode is controlled by the autosync bit (MR7, bit A4), and
is effective when the LP2 bit (MR5, bit A1) is set and the WCK clocks are stopped during power‐down.
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H5GQ2H24AFR
Also, this mode works for both normal and PIN mode. When WCK2CK automatic synchronization mode
is enabled, a full WCK2CK training including Phase search is not required after power‐down exit,
although WCK2CK MRS must be issued momentarily for setting the data synchronizers. However, WCK
and CK clocks must meet the t
specification upon power‐down exit. Any allowed command
WCK2CKSYNC
may be issued after t
or after t in case the PLL had been enabled upon power‐down entry. The PLL
XPN
LK
sequence is not affected by this mode. The use of WCK2CK automatic synchronization mode is restricted
to lower operating frequencies up to f as described in the datasheets.
CKAUTOSYNC
Table 12 describes WCK2CK training methods for different frequency ranges. Each Frequency range is
vendor specific. Normal and PIN mode of WCK2CK training are described in Table 12. Each frequency
range is DRAM vendor specific. Divider initialization can be done by training with WCK2CK inversion,
WCK2CK stopping, or WCK2CK auto‐sync. If the user wants to use WCK2CK stop for divider initializa‐
tion instead of WCK2CK auto‐sync, the user must not set the WCK2CK auto‐sync. Low frequency, the
combined use of PIN and WCK2CK auto‐sync modes can minimize WCK2CK training time.
Table 12 WCK2CK training simplified for Normal mode and PIN mode
High Frequency
Low Frequency
Frequency
WCK2CK alignment mode
Phase Search
＜ 2Gbps
≥ 2Gbps
Normal
Required
PIN
Normal
No*
PIN
Required
No*
* Note: The divided WCK/WCK# should be aligned CK/CK# by WCK2CK Auto Synchronization or WCK stop mode
The following examples describe the WCK2CK training in more detail.
Example 1: outline of a basic WCK2CK training sequence without WCK clock stop:
1)
2)
Enable training mode via MRS and wait t
MRD
Sweep and observe the phase independently for WCK01 on EDC0 and WCK23 on EDC2; in case
the internal divide‐by‐2 circuits are at opposite phase use either the WCK01 or WCK23 inversion
bit
to flip one of the WCK divide‐by‐2 circuits
3)
Adjust the WCK phase independently for WCK01 and WCK23 to the optimal point (“ideal
alignment”)
4)
5)
6)
Issue a PLL reset and wait for t (PLL on mode only)
LK
While all WCK and CK are aligned, exit WCK2CK training mode via MRS
Wait t
for the reset of data synchronizers
MRD
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H5GQ2H24AFR
Example 2: outline of a basic WCK2CK training sequence with optional WCK clock stop:
1)
Stop WCK clocks with WCK01/WCK23 LOW and WCK01#/WCK23# HIGH
Wait t for internal WCK clocks to settle
2)
WCK2MRS
3)
Enable training mode via MRS and wait t
for divide‐by‐2 circuits to reset
MRD
4)
Start WCK clocks without glitches (both divide‐by‐2 circuits remain in sync)
Wait t for internal WCK clocks to stabilize
5)
WCK2TR
6)
Sweep and observe the phase independently for WCK01 on EDC0 and WCK23 on EDC2; adjust
the
WCK phase to the optimal point (“ideal alignment”)
7)
8)
9)
Issue a PLL reset and wait t (PLL on mode only)
LK
While all WCK and CK are aligned, exit WCK2CK training mode via MRS
Wait t
for the reset of data synchronizers
MRD
READ and WRITE latency timings are defined relative to CK. Any offset in WCK and CK at the pins and/
or the phase detector will be reflected in the latency timings. The parameters used to define the relation‐
ship between WCK and CK are shown in Figure 6. For more details on the impact on READ and WRITE
timings see the OPERATIONS section.
t
t
t
CL
CK
CH
CK#
CK
Case 1: Negative t
; t
= 0 (ideal WCK2CK alignment)
WCK2CKPIN WCK2CK
t
t
WCKH WCKL
t
WCK
t
WCK2CKPIN
WCK#
WCK
Case 2: Negative t
; negative t
WCK2CK
WCK2CKPIN
t
+ t
WCK2CKPIN
WCK2CK
WCK#
WCK
Case 3: Positive t
; t
= 0 (ideal WCK2CK alignment)
WCK2CKPIN WCK2CK
t
WCK2CKPIN
WCK#
WCK
Case 4: Positive t
; positive t
WCK2CK
WCK2CKPIN
t
+ t
WCK2CK
WCK2CKPIN
WCK
WCK#
Note: t
and t
parameter values could be negative or positive numbers, depending on the selected
WCK2CK
WCK2CKPIN
WCK2CK alignment point, PLL‐on‐or PLL‐off mode operation and design implementation. They also vary across
PVT. WCK2CK training is required to determine the correct WCK‐to‐CK phase for stable device operation.
Figure 15: WCK2CK Timings
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H5GQ2H24AFR
GDDR5 WCK2CK Training in x16 mode
For configurations with WCK clocks not shared between two GDDR5 SGRAMs it is suggested to set the
WCK phase to the ideal alignment point. However, for configurations where two GDDR5 SGRAMs (x16)
share their WCK clocks as in a x16 clamshell, an offset given by the midpoint of both DRAM’s ideal WCK
positions may be required. The maximum allowed offset in this case is specified by parameter
t
: it defines the WCK offset range from the ideal alignment which still guarantees a GDDR5
WCK2CKSYNC
SGRAM device to internally synchronize its WCK and CK clocks upon training exit.
Example: outline of training sequence for x32 and x16 configurations with 2 GDDR5 SGRAMs sharing
their WCK clocks (e.g. clamshell)
1)
Enable training mode for both DRAMs via MRS and wait t
MRD
For both DRAMs sweep and observe the phase independently for WCK01 on EDC0 and WCK23
2)
on
EDC2; in case the internal divide‐by‐2 circuits are at opposite phases use either the WCK01 or
WCK23 inversion bit to flip one of the WCK divide‐by‐2 circuits; in case of shared CS# signals use
MREMF0 and MREMF1 bits in MR15 to explicitly direct the MRS command for this phase flipping
to either DRAM1 or DRAM2 (“soft chip select”);
3)
4)
Sweep and observe the phase on DRAM1 independently for WCK01 on EDC0 and WCK23 on
EDC2; store the setting for the optimal WCK phase
Sweep and observe the phase on DRAM2 independently for WCK01 on EDC0 and WCK23 on
EDC2; store the setting for the optimal WCK phase
5)
6)
7)
8)
Sweep WCK01 and WCK23 phase to midpoint of DRAM1 and DRAM2 optimal settings
Issue a PLL reset and wait for t (PLL on mode only)
LK
While all WCK and CK are aligned, exit WCK2CK training mode via MRS
Wait t
for the reset of data synchronizers
MRD
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H5GQ2H24AFR
3.4. READ TRAINING
Read training allows the memory controller to find the data‐eye center (symbol training) and burst frame
location (frame training) for each high‐speed output of the GDDR5 SGRAM. Each pin (DQ0‐DQ31, DBI0#‐
DBI3#, EDC0‐EDC3) can be individually trained during this sequence.
For Read Training the following conditions must be true:
•
at least one bank is active, or an auto refresh must be in progress and bit A2 in Mode Register 5 (MR5) is set to 0 to
allow training during auto refresh (to disable this special REF enabling of the WCK clock tree an ACT command
must be issued, or the device must be set into power‐down or self refresh mode)
•
•
•
WCK2CK training must be complete
the PLL must be locked, if enabled
RDBI and WDBI must be enabled prior to and during Read Training if the training shall include the DBI# pins.
RDCRC and WRCRC must be enabled prior to and during Read Training if the training shall include the EDC
pins.
The following commands are associated with Read Training:
•
•
LDFF to preload the Read FIFO;
RDTR to read a burst of data directly out of the Read FIFO.
Neither LDFF nor RDTR access the memory core. No MRS is required to enter Read Training.
Figure 16 shows an example of the internal data paths used with LDFF and RDTR. Table 13 lists AC timing
parameters associated with Read Training.
Table 13 LDFF and RDTR TIMINGS
VALUES
PARAMETER
SYMBOL
UNIT NOTES
MIN
10
10
10
2
MAX
ACTIVE to LDFF command delay
t
–
–
–
–
–
–
–
–
ns
ns
ns
RCDLTR
t
RCDRTR
ACTIVE to RDTR command delay
REFRESH to RDTR or WRTR command delay
RDTR to RDTR command delay
t
REFTR
t
t
t
t
t
t
CCDS
CK
CK
CK
CK
CK
LDFF to LDFF command cycle time
LDFF(111) to LDFF command cycle time
LDFF(111) to RDTR command delay
READ or RDTR to LDFF command delay
t
4
LTLTR
a
t
4
LTL7TR
t
4
LTRTR
t
4
RDTLT
a.
The min. value does not exceed 8 t
.
CK
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H5GQ2H24AFR
Serial to Parallel
Converter
8:1
e.g. 500Mbps
72
Reverse
DBI
DQ
RX
e.g. 4Gbps
TX
9
64
72
WRTR strobe
(CK domain)
WRTR
DRAM
Core
M
U
X
FIFO 6× 72=432 bits per byte
CRC8
DQ0‐DQ7
DBI0#
0
8
1
9
2
3
4
5
6
7
72
10 11 12 13 14 15
M
U
X
16 17 18 19 20 21 22 23
24 25 26 27 28 29 30 31
32 33 34 35 36 37 38 39
40 41 42 43 44 45 46 47
48 49 50 51 52 53 54 55
56 57 58 59 60 61 62 63
64 65 66 67 68 69 70 71
72
64
DBI
Parallel to Serial
Converter
8:1
9
72
e.g.
500Mbps
72
WRTR
LDFF
0 1 2 3
4
0
1 2 3 4
input
5
M
U
X
WRTR strobe
output
RDTR strobe
(WCK)
pointer
pointer
LDFF strobe (burst 7)
CRC FIFO 6×8 =48 bits per byte
M
U
X
8
8
Parallel to Serial
Converter
8
TX
RX
8:1
0
1
2
3
4
5
6
7
0
EDC0
8
DEMUX
LDFF
BA0‐BA2
0 1 2 3
4
1 2 3 4
input
5
M
U
X
10
Address
Path
CRC strobe
output
RDTR strobe
(WCK)
pointer
pointer
LDFF strobe (burst 7)
8
ADDR
Data path used with LDFF
Data path used with WRTR
Notes:
1) FIFO depth of 5 shown; supported FIFO depths: 4, 5 or 6
2) data paths shown for 1 of 4 bytes (byte 0)
Data path used with LDFF/WRTR
Data path used with RDTR
Figure 16: Data Paths used for Read and Write Training
LDFF Command
The LDFF command (Figure 17) is used to securely load data to the GDDR5 SGRAM Read FIFOs via the
address bus. Depending on the GDDR5 SGRAM READ FIFO depth nFIFO 6, any bit pattern of length 32‐
48 can be loaded uniquely to every DQ, DBI# and EDC pin within a byte. The FIFO depth is fixed by
design and can be read via the Vendor ID function.
Eight LDFF commands are required to fill one FIFO stage; each LDFF command loads one burst position,
and the bank addresses BA0‐BA2 select the burst position from 0 to 7.
The data pattern is conveyed on address pins A0‐A7 for DQ0‐DQ7, A9 for DBI0#, and BA3 for EDC0; the
data are internally replicated to all 4 bytes, as shown in Figure 18.
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H5GQ2H24AFR
LDFF loads the DBI FIFO regardless of the WDBI and RDBI Mode Register bits. It also loads the EDC FIFO
regardless of the WRCRC and RDCRC Mode Register bits, and no CRC is calculated; however, RDBI and
RDCRC must be enabled to read the DBI and EDC bits, respectively, with the RDTR command.
LDFF
CK#
CK
CKE#
CS#
LOW
RAS#
CAS#
WE#
A9, BA3
A1, A3
DATA
0,0,1
DATA
DATA
A8,A10,A11
A0,A7,A6
BA0‐BA2
A2, A4,A5
DATA
BP
BP = Burst Position
DATA = FIFO data
Figure 17: LDFF Command
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H5GQ2H24AFR
1 FIFO STAGE = 1 BURST
LDFF Command
Address‐to‐DQ Mapping
0
1
2
3
4
5
6
7
Byte 0 Byte 1 Byte 2 Byte 3
CK#
CK
A0
A1
A2
A3
A4
A5
A6
A7
DQ0 DQ8 DQ16 DQ24
DQ1 DQ9 DQ17 DQ25
DQ2 DQ10 DQ18 DQ26
DQ3 DQ11 DQ19 DQ27
DQ4 DQ12 DQ20 DQ28
DQ5 DQ13 DQ21 DQ29
DQ6 DQ14 DQ22 DQ30
DQ7 DQ15 DQ23 DQ31
L A10 A0
A9 A1
BA0 A2
BA3 A3
BA2 A4
BA1 A5
H A11 A6
L
A8 A7
A9 DBI0# DBI1# DBI2# DBI3#
BA3 EDC0 EDC1 EDC2 EDC3
Burst Position
0
1
2
0
1
0
3
0
1
1
4
1
0
0
5
6
7
1
1
1
BA2
BA1
BA0
0
0
0
0
0
1
1
0
1
1
1
0
LDFF FIFO Load Pulse
Figure 18: LDFF Command Address to DQ/DBI#/EDC Mapping
All burst addresses 0 to 7 must be loaded; LDFF commands to burst address 0 to 6 may be issued in ran‐
dom order; the LDFF command to burst address 7 (LDFF7) must be the last of 8 consecutive LDFF com‐
mands, as it effectively loads the data into the FIFO and results in a FIFO pointer increment. Consecutive
LDFF commands have to be spaced by at least t
LDFF command to burst address 7.
, and at least t
cycles are required after each
LTL7TR
LTLTR
LDFF pattern may efficiently be replicated to the next FIFO stages by issuing consecutive LDFF commands
to burst address 7 (with identical data pattern). The data pattern in the scratch memory for LDFF will be
available until the first RDTR command.
The DQ/DBI# output buffers remain in ODT state during LDFF.
An amount of LDFF commands to burst address 7 greater than the FIFO depth is allowed and shall result
in a looping of the FIFO’s data input.
The total number of LDFF commands to burst address 7 modulo FIFO depth must equal the total number
of RDTR commands modulo FIFO depth when used in conjunction with RDTR. No READ or WRITE com‐
mands are allowed between LDFF and RDTR.
The EDC hold pattern is driven on the EDC pins during LDFF (provided RDQS mode is not enabled).
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Rev. 1.2 /Nov. 2011
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H5GQ2H24AFR
RDTR Command
A RDTR burst is initiated with a RDTR command as shown in Figure 19. No bank or column addresses are
used as the data is read from the internal READ FIFO, not the array. The length of the burst initiated with
a RDTR command is eight. There is no interruption nor truncation of RDTR bursts.
RDTR
CK#
CK
CKE#
CS#
LOW
RAS#
CAS#
WE#
A9 (A12)
A1
A8,A10,A11
A7,A0,A6
0,1,1
BA0‐BA3
A2‐A5
Figure 19: RDTR Command
A RDTR command may only be issued when a bank is open or a refresh is in progress and bit A2 in MR5
is set to 0 to allow training during refresh.
RDBI and RDCRC must be enabled to read the DBI and EDC bits, respectively, with the RDTR command.
If not set, the DBI# pins will remain in ODT state, and the EDC pins will drive the EDC hold pattern.
In case of the RDQS mode, the EDC pin functions like with a normal READ in this mode. The DBI# pin
behaves like a DQ, and no encoding with DBI is performed.
An amount of RDTR commands greater than the FIFO depth is allowed and shall result in a looping of the
FIFO’s data output. The FIFO depth from which the RDTR data is read must be a number between 4‐6 and
must be specified by the DRAM vendor. The FIFO depth is read via the Vendor ID function.
During RDTR bursts, the first valid data‐out element will be available after the CAS latency (CL). The
latency is the same as for READ. The data on the EDC pins comes with additional CRC latency (t
after the CL.
)
CRCRD
Upon completion of a burst, assuming no other RDTR command has been initiated, all DQ and DBI# pins
will drive a value of ʹ1ʹ and the ODT will be enabled at a maximum of 1 t later. The drive value and ter‐
CK
mination value may be different due to separately defined calibration offsets. If the ODT is disabled, the
pins will drive Hi‐Z.
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ2H24AFR
Data from any RDTR burst may be concatenated with data from a subsequent RDTR command. A contin‐
uous flow of data can be maintained. The first data element from the new burst follows the last element of
a completed burst. The new RDTR command should be issued after the first RDTR command according to
the t
timing.
CCDS
A WRTR can be issued any time after a RDTR command as long as the bus turn around time t
is met.
RTW
The total number of RDTR commands modulo FIFO depth must be equal to total number of WRTR com‐
mands modulo FIFO depth when used in conjunction with WRTR. No READ or WRITE commands are
allowed between WRTR and RDTR.
The total number of RDTR commands modulo FIFO depth must be equal to the total number of LDFF
commands to burst position 7 modulo FIFO depth when used in conjunction with LDFF. No READ or
WRITE commands are allowed between LDFF and RDTR.
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ2H24AFR
3.5. WRITE TRAINING
Write training allows the memory controller to find the data‐eye center (symbol training) and burst frame
location (frame training) for each high‐speed input of the GDDR5 SGRAM. Each pin (DQ0‐DQ31, DBI0#‐
DBI3#) can be individually trained during this sequence.
For Write Training the following conditions must be true:
•
at least one bank is active, or an auto refresh must be in progress and bit A2 in Mode Register 5 (MR5) is set to 0 to
allow training during auto refresh (to disable this special REF enabling of the WCK clock tree an ACT command
must be issued, or the device must be set into power‐down or self refresh mode)
•
•
•
•
the PLL must be locked, if enabled.
WCK2CK training should be complete
Read training should be complete
RDBI and WDBI must be enabled prior to and during Write Training if the training shall include the DBI# pins.
RDCRC and WRCRC must be enabled prior to and during Write Training if the training shall include the EDC
pins.
The following commands are associated with Write Training:
•
•
WRTR to write a burst of data directly into the Read FIFO;
RDTR to read a burst of data directly out of the Read FIFO.
Neither WRTR nor RDTR access the memory core. No MRS is required to enter Write Training.
Figure 16 shows an example of the internal data paths used with WRTR and RDTR. Figure 21 shows a typ‐
ical Write training command sequence using WRTR and RDTR. Table 14 lists AC timing parameters asso‐
ciated with WRITE Training.
Table 14 WRTR and RDTR Timings
VALUES
PARAMETER
SYMBOL
UNIT
NOTES
MIN
10
MAX
ACTIVE to WRTR command delay
ACTIVE to RDTR command delay
t
–
–
–
ns
ns
ns
RCDWTR
t
10
RCDRTR
REFRESH to RDTR or WRTR command delay
t
10
REFTR
RD/WR bank A to RD/WR bank B command delay
different bank groups
a
t
2
–
–
t
t
CCDS
CK
CK
WL+BL/4+1
-tWLmin
WRTR to RDTR command delay
t
c
WTRTR
WRITE to WRTR command delay
t
WL+CRCWL+2
–
–
t
t
WRWTR
CK
CK
b
READ or RDTR to WRITE or WRTR command delay
t
CL+BL/4+2‐WL
RTW
a.
b.
c.
t
is either for gapless consecutive READ or RDTR (any combination), gapless consecutive WRITE, or gapless consecutive
CCDS
WRTR commands.
is not a device limit but determined by the system bus turnaround time. The difference between t
t
and t
WCK2DQI
RTW
WCK2DQO
shall be considered in the calculation of the bus turnaround time.
is Internal WRTR to External RDTR command delay. (Figure 21)
t
WTRTR
.
In case, External WRTR to External RDTR command delay time is “WL+(WL+BL/4+1‐tWLmin)”.
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
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H5GQ2H24AFR
WRTR Command
A WRTR burst is initiated with a WRTR command as shown in Figure 20. No bank or column addresses
are used as the data is written to the internal READ FIFO, not the array. The length of the burst initiated
with a WRTR command is eight. There is no interruption nor truncation of WRTR bursts.
WRTR
CK#
CK
CKE#
CS#
LOW
RAS#
CAS#
WE#
A9 (A12)
A1
A8,A10,A11
A7,A0,A6
0,1,1
BA0‐BA3
A2‐A5
Figure 20: WRTR Command
A WRTR command may only be issued when a bank is open or a refresh is in progress and bit A2 in MR5
is set to 0 to allow training during refresh.
WDBI and WRCRC must be enabled to write the DBI and EDC bits, respectively, with the WRTR com‐
mand. If WDBI is not set, a ‘1’ will be written to the DBI FIFO, and a ‘1’ will be assumed for the DBI# input
in the CRC calculation. In contrast to a normal WRITE, no CRC is returned by the WRTR command and
the EDC pins will drive the EDC hold pattern.
In case of the RDQS mode, the EDC pin functions like with a normal READ in this mode. Please note that
RDCRC must be enabled to read the calculated CRC data with the RDTR command.
An amount of WRTR commands equal to the FIFO depth is required to fully load the FIFO; any number of
WRTR commands greater than the FIFO depth is allowed and shall result in a looping of the FIFO’s data
input. The FIFO depth to which the WRTR data is written must be 6. The FIFO depth is read via the Ven‐
dor ID function.
During WRTR bursts, the first valid data‐in element must be available at the input latch after the Write
Latency (WL). The Write Latency is the same as for WRITE.
Upon completion of a burst, assuming no other WRTR data is expected on the bus the GDDR5 SGRAM
DQ and DBI# pins will be driven according to the ODT state. Any additional input data will be ignored.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
39
H5GQ2H24AFR
Data from any WRTR burst may be concatenated with data from a subsequent WRTR command. A contin‐
uous flow of data can be maintained. The first data element from the new burst follows the last element of
a completed burst. The new WRTR command should be issued after the previous WRTR command
according to the t
timing.
CCDS
A RDTR can be issued any time after a WRTR command as long as the internal bus turn around time t
RT‐
is met.
WTR
The total number of WRTR commands modulo FIFO depth must equal the total number of RDTR com‐
mands modulo FIFO depth when used in conjunction with RDTR. No READ or WRITE commands are
allowed between WRTR and RDTR.
T0
T1
T2
T3
T4
T5
Ta
Ta+1
NOP
Ta+2
Ta+3
NOP
Ta+4
NOP
CK#
CK
CMD
WRTR
NOP
WRTR
NOP
NOP
NOP
RDTR
RDTR
ADDR
tWTRTR
WLmrs
WLmrs
CLmrs
CRCRL
CLmrs
CRCRL
WCK
WCK#
DQ
EDC
EDC Hold EDC Hold EDC Hold EDC Hold EDC Hold EDC Hold EDC Hold EDC Hold
Donʹt Care
1. WLmrs, CLmrs and CRCRL set to 1 for ease of illustration; check Mode Register definition for supported settings
2. WCK and CK are shown aligned (t =0, t =0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
WCK2CKPIN
WCK2CK
Figure 21: Write Training using WRTR and RDTR Commands
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
40
H5GQ2H24AFR
4. MODE REGISTERS
GDDR5 specifies 10 Mode Registers to define the specific mode of operation. MR0 to MR7 and MR15 are defined as shown in
the overview in Figure 22. MR8 to MR13 are not defined and may be used by DRAM vendors for vendor specific features. Repro-
gramming the Mode Registers will not alter the contents of the memory array.
All Mode Registers are programmed via the MODE REGISTER SET (MRS) command and will retain the stored information until
they are reprogrammed or the device loses power. Mode Registers must be loaded when all banks are idle and no bursts are in
progress, and the controller must wait the specified time t
before initiating any subsequent operation. Violating either of these
MRD
requirements will result in unspecified operation.
No default states are defined for Mode Registers except when otherwise noted. Users therefore must fully initialize all Mode Reg-
isters to the desired values e.g. upon power-up.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result. RFU bits are
reserved for future use and must be programmed to 0. Bit A12 is not used for any mode register programming as this address input
is not defined for 512M and 1G density.
A12/
13
BA3 BA2 BA1 BA0
A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Write Latency
(WLmrs)
0
0
0
0
0
0
0
0
0
0
1
1
0
1
0
1
0
0
0
0
Write Recovery (WR)
TM
CAS Latency (CLmrs)
Cal ADR/CMD
MR0
MR1
MR2
MR3
PLL
Data
ABI WDBI RDBI PLL
Driver Strength
Reset
Upd Termination Termination
ADR/CMD
Data and WCK
OCD Pullup
Driver Offset
OCD Pulldown Driver
Termination Offset Termination Offset
Offset
Bank
WCK
RDQS WCK WCK WCK
Info
Self Refresh
Mode
Groups Termination
2CK 23Inv 01Inv
CRC Read
EDC WR RD
13Inv CRC CRC
CRC Write Latency
(CRCWL)
0
1
0
0
0
Latency
EDC Hold Pattern
MR4
(CRCRL)
PLL Bandwidth
(PLLBW)
0
0
0
1
1
1
1
1
0
0
0
1
1
0
0
1
0
1
0
1
0
0
0
0
0
RFU
LP3 LP2
RFU
MR5
MR6
MR7
MR8
MR9
VREFD Offset
Upper 2 bytes
VREFD Offset
Lower 2 bytes
Auto VREFD
VREFD Merge
VREFD
WCK PIN
Half Temp DQ Auto LF
VREFD Sense PreA Sync Mode
PLL
DCC
RFU
RFU
Stdby
RFU
Pre & De
‐ Emphasis
RFU
MRE MRE
MF1 MF0
1
1
1
1
0
RFU ADT
X
X
X
X
X
X
X
X
MR15
Figure 22. Mode Registers Overview
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
41
H5GQ2H24AFR
4.1. MODE REGISTER 0 (MR0)
Mode Register 0 controls operating modes such as Write Latency, CAS latency, Write Recovery and Test
Mode as shown in Figure 23.
The register is programmed via the MODE REGISTER SET (MRS) command with BA0=0, BA1=0, BA2=0
and BA3=0.
BA3 BA2 BA1 BA0 A12 A11 A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Write Latency
(WLmrs)
0
0
0
0
0
Write Recovery (WR)
TM
CAS Latency (CLmrs)
Write Latency
Write Recovery
(WR)
A7
Test Mode
A2
A1
A0
A11
A10
A9
A8
(WLmrs)
0
1
Normal
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
RFU
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
4
5
Test Mode
1
2
3
4
5
6
7
6
7
8
9
10
11
12
13
14
15
16
17
18
19
A6
A5
A4
A3
CAS Latency (CLmrs)
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Figure 23. Mode Register 0 (MR0) Definition
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
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H5GQ2H24AFR
WRITE Latency (WLmrs)
The WRITE latency (WLmrs) is the delay in clock cycles used in the calculation of the total WRITE latency
(WL) between the registration of a WRITE or WRTR command and the availability of the first piece of
input data. DRAM vendor specifications should be checked for value(s) of WLmrs supported. The full
WRITE latency definition can be found in the section entitled OPERATION.
When the WRITE latencies are set to small values (i.e. 1,2,... clocks), the input receivers never turn off, in
turn, raising the operating power. When the WRITE latency is set to higher values (i.e. .. 6, 7 clocks) the input
receivers turn on when the WRITE or WRTR command is registered. Refer to vendor datasheets for value(s)
of WLmrs where the input receivers are always on or only turn on when the WRITE or WRTR command is
registered
Allowable Operating Frequency (Gbps)
Speed
WL 7
WL 6
WL 5
WL 4
WL 3
WL 2
WL 1
6.0Gbps
5.5Gbps
5.0Gbps
4.5Gbps
4.0Gbps
CAS Latency (CLmrs)
The CAS latency (CLmrs) is the delay in clock cycles used in the calculation of the total READ latency
(CL) between the registration of a READ or RDTR command and the availability of the first piece of output
data.
By default CLmrs is specified by bits A3‐A6, defining a CLmrs range of 5 to 20 tCK.
DRAM vendor specifications should be checked for value(s) of CLmrs supported. The full READ latency
definition can be found in the section entitled OPERATION
Allowable Operating Frequency (Gbps)
CL 18 CL 17 CL 16 CL 15 CL 14
RDBI
ON/OFF
Speed
CL 20
CL 19
CL 13
CL 12
OFF
ON
OFF
ON
OFF
ON
OFF
ON
OFF
ON
6.0Gbps
5.5Gbps
5.0Gbps
4.5Gbps
4.0Gbps
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
43
H5GQ2H24AFR
WRITE Recovery (WR)
The programmed WR value is used for the auto precharge feature along with t to determine t
. The
DAL
RP
WR register bits are not a required function and may be implemented at the discretion of the DRAM
manufacturer.
WR must be programmed with a value greater than or equal to RU{t /t }, where RU stands for round
WR CK
up, t
is the analog value from the vendor datasheet and t is the operating clock cycle time.
CK
WR
By default WR is specified by bits A8‐A11, defining a WR range of 4 to 19 tCK.
Test Mode
The normal operating mode is selected by issuing a MODE REGISTER SET command with bit A7 set to
’0’, and bits A0‐A6 and A8‐A11 set to the desired values. Programming bit A7 to ‘1’ places the device into a
test mode that is only to be used by the DRAM manufacturer. No functional operation is specified with test
mode enabled.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
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H5GQ2H24AFR
4.2. MODE REGISTER 1 (MR1)
Mode Register 1 controls functions like drive strength, data termination, address/command termination,
Read DBI, Write DBI, ABI, control of calibration updates and PLL as shown in Figure 24.
The register is programmed via the MODE REGISTER SET (MRS) command with BA0=1, BA1=0, BA2=0
and BA3=0. Bits A0‐A1, A4‐A6 and A10 of this register are initialized with’0’s.
BA3 BA2 BA1 BA0 A12 A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
PLL
Cal ADR/CMD
Data
Driver
0
0
0
1
0
ABI WDBI RDBI PLL
Reset
Upd Termination Termination Strength
A1
A0
Driver Strength
0
0
1
1
0
1
0
1
Auto Calibration On
RFU
A11 PLL Reset
A7
PLL
Nominal (60/40)
RFU
0
1
No
Yes
0
1
Off
On
A10
ABI
A6 Calibration Update
A3
A2
Data Termination
0
1
On
Off
0
1
On
Off
0
0
1
1
0
1
0
1
Disabled
ZQ/2
ZQ
RFU
A9 Write DBI
A8
Read DBI
0
1
On
Off
0
1
On
Off
A5
A4 ADD/CMD Termination
0
0
1
1
0
1
0
1
CKE# value at Reset
ZQ/2
ZQ
Disabled
Figure 24. Mode Register 1 (MR1) Definition
Impedance Autocalibration of Output Buffer and Active Terminator
GDDR5 SGRAMs offer autocalibrating impedance output buffers and on‐die terminations. This enables a
user to match the driver impedance and terminations to the system within a given range. To adjust the
impedance, an external precision resistor is connected between the ZQ pin and V . A nominal resistor
SSQ
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
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H5GQ2H24AFR
value of 120 Ohms is equivalent to the 40 Ohms Pulldown and 60 Ohms Pullup nominal impedances of
GDDR5 SGRAMs. RESET#, CK and CK# are not internally terminated. CK and CK# shall be terminated on
the system using external 1% resistors to V
.
DDQ
The output driver and on‐die termination impedances are updated during all REFRESH commands to
compensate for variations in supply voltage and temperature. The impedance updates are transparent to
the system.
Driver Strength
Bits A0 and A1 define the driver strength. The Auto Calibration setting enables the Auto‐Calibration
functionality for the Pulldown, Pullup and Termination over process, temperature and voltage changes.
The design target for the factory setting is 40 Ohm Pulldown, 60 Ohm Pullup driver strength with nominal
process, voltage and temperature conditions.
The nominal option enables the factory setting for the Pulldown, Pullup driver strength and termination.
With this option enabled, driver strength and termination are expected to change with process, voltage
and temperature. AC timings are only guaranteed with Auto Calibration.
Data Termination
Bits A2 and A3 define the data termination value for the on‐die termination (ODT) for the DQ and DBI#
pins in combination with the driver strength setting.
The termination can be set to a value of ZQ/2 which is intended for a single loaded system, or ZQ which
is intended for a weaker termination used in a lower power or frequency applications. The data
termination may also be turned off.
ADR/CMD Termination
Bits A4 and A5 define the address/command termination. The default setting (’00’) provides that the
address/command termination is determined by latching CKE# on the rising edge of RESET#.
The address/command termination can also be set to a value of ZQ/2 which is intended for a single
loaded system, or ZQ which is intended for double loaded configurations with two devices sharing a
common address/command bus. The address/command termination may also be turned off.
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
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H5GQ2H24AFR
Calibration Update
The Calibration Update setting enables the calibration value to be updated automatically by the auto
calibration engine. The function is enabled upon power‐up to reduce update induced jitter. The user may
decide to suppress updates from the auto calibration engine by disabling Calibration Update (A6=1).
The calibration updates can occur with any REFRESH command. The update is not complete for a time
t
after the latching of the REFRESH command. During this t
time, only NOP or DESELECT
KO
KO
commands may be issued
PLL and PLL Reset
If a PLL is to be used, it must be enabled for normal operation by setting bit A7 to ’1’.
A PLL reset is done by turning the PLL off then on, or by use of the PLL Reset bit A11. The PLL Reset bit
is self clearing meaning that it returns back to the value ‘0’ after the PLL reset function has been issued.
RDBI and WDBI
Bit A8 controls Data Bus Inversion (DBI) for READs (RDBI), and bit A9 controls Data Bus Inversion for
WRITEs (WDBI). For more details on DBI see READ and WRITE Data Bus Inversion (DBI) in the section
entitled OPERATION.
ABI
Address Bus Inversion (ABI) is selected independently from DBI using bit A10. When enabled any data
sent over the address bus (whether opcode, addresses, LDFF data or DM) is inverted or not inverted based
on the state of ABI# signal. For more details on ABI see Address Bus Inversion (ABI) in the section entitled
OPERATION.
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
47
H5GQ2H24AFR
4.3. MODE REGISTER 2 (MR2)
Mode Register 2 defines the output driver (OCD) and termination offsets as shown in Figure 25.
Mode Register 2 is programmed via the MODE REGISTER SET (MRS) command with BA0=0, BA1=1,
BA2=0 and BA3=0.
BA3 BA2 BA1 BA0 A12 A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
ADR/CMD
Data and WCK
OCD Pullup
Driver Offset
OCD Pulldown
Driver Offset
0
0
1
0
0
Termination Offset Termination Offset
Data and WCK
OCD Pulldown
Driver Offset
A8
A7
A6
A2
A1
A0
Termination Offset
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
+1
+2
+3
‐4
‐3
‐2
‐1
+1
+2
+3
‐4
‐3
‐2
‐1
ADR/CMD
OCD Pullup
Driver Offset
A11 A10 A9
A5
A4
A3
Termination Offset
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
+1
+2
+3
‐4
‐3
‐2
‐1
+1
+2
+3
‐4
‐3
‐2
‐1
Figure 25. Mode Register 2 (MR2) Definition
Impedance Offsets
The driver and termination impedances may be offset individually for PD driver, PU driver, DQ/DBI#/
WCK termination and address/command termination. The offset impedance step values may be non‐
linear and will vary across PVT. With negative offset steps the drive strengths will be decreased and Ron
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
48
H5GQ2H24AFR
will be increased. With positive offset steps the drive strengths will be increased and Ron will be
decreased. With negative offset steps the termin‐ation value will be increased. With positive offset steps
the termination value will be decreased.
IV curves and AC timings are only guaranteed with zero offset.
Offset
PU Driver
Pullup
Impedance
Autocalibrated
Impedance
ZQ
Calibration
Engine
Offset
PD Driver
120
Ohms
Pulldown
Impedance
Auto/Fixed
VSSQ
nominal (60/40)
Offset
ADD/CMD
Termination
Impedance
ADD/CMD Termination
Fixed Impedance
Offset
DQ/DBI#/WCK
Termination
Impedance
Note: sum of offset + auto‐
calibrated impedance cannot
exceed maximum/ minimum
available impedance steps
DQ/DBI#/WCK Termination
Figure 26. Impedance Offsets
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
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H5GQ2H24AFR
4.4. MODE REGISTER 3 (MR3)
Mode Register 3 controls functions including Bank Groups, WCK termination, self refresh, RDQS mode,
DRAM Info and WCK2CK training as shown in Figure 27.
Mode Register 3 is programmed via the MODE REGISTER SET (MRS) command with BA0=1, BA1=1,
BA2=0 and BA3=0.
BA3 BA2 BA1 BA0 A12 A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
RDQS
Mode
Bank
WCK
WCK WCK WCK
2CK 23Inv 01Inv
0
0
1
1
0
Info
Self Refresh
Groups Termination
A1
A0
Self Refresh
A11 A10
Bank Groups
off / tCCDL = 2 t
on / tCCDL = 3 t
0
0
1
1
0
1
0
1
32 ms
16ms
8ms
0
1
X
X
CK
CK
RFU
A9
A8
WCK Termination
RDQS
A2
WCK01 Invert
A5
0
0
1
1
0
1
0
1
Disabled
ZQ/2
ZQ
Mode
0
1
Off
On
0
1
Off
On
RFU
A3
WCK23 Invert
Off
On
0
1
A7
A6
DRAM Info
0
0
1
1
0
1
0
1
off
Vendor ID
A4 WCK2CK Training
Temperature Readout
RFU
0
1
Off
On
Figure 27. Mode Register 3 (MR3) Definition
Self Refresh
The refresh interval in self refresh mode may be set to 32ms, 16ms and 8ms.
WCK2CK
Bit A4 (WCK2CK) enables and disables the WCK2CK alignment training. For details on this training
sequence, see the section on TRAINING.
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
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H5GQ2H24AFR
WCK01 / WCK23 Inversion
Bits A2 and A3 control whether the internal phase of the WCK01 and WCK23 clock inputs after internal
divide‐by‐2 shall be inverted, corresponding to a 2 U.I. phase shift. The bits are used in conjunction with
WCK2CK training mode.
RDQS Mode
Bit A5 enables the RDQS mode of the GDDR5 SGRAM. In this mode the EDC pins will act as a READ
strobe (RDQS). No CRC is supported in RDQS mode, and all related bits in MR4 will be ignored. A
detailed description of the RDQS mode can be found in the section entitled OPERATION.
DRAM Info
Bits A6 and A7 enable the DRAM Info mode which is provided to output the Vendor ID, or the current
junction temperature.
The Vendor ID identifies the manufacturer of the GDDR5 SGRAM, and provides the die revision,
memory density and FIFO depth.
The Temperature Readout provides the SGRAM’s junction temperature. The on‐chip is enabled in
advance by bit A6 in MR7.
WCK Termination
Bits A8 and A9 define the termination value for the on‐die termination (ODT) for the WCK01, WCK01#,
WCK23 and WCK23# pins in combination with the driver strength setting.
The termination can be set to a value of ZQ/2 which is intended for a single loaded system, or ZQ which
is intended for double load configurations with two devices sharing the WCK clocks. The WCK
termination may also be turned off.
Bank Groups
Bit A11 enables the bank groups feature. With A11 set to ‘1’, the bank groups feature is enabled and
CCDL
t
is 3tCK.
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
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H5GQ2H24AFR
4.5. MODE REGISTER 4 (MR4)
Mode Register 4 defines the Error Detection Code (EDC) features of GDDR5 SGRAMs as shown in
Figure 28.
The register is programmed via the MODE REGISTER SET (MRS) command with BA0=0, BA1=0, BA2=1
and BA3=0. Bits A0‐A3 (EDC Hold Pattern) of this register are initialized with ’1111’.
BA3 BA2 BA1 BA0 A12 A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
CRC Read
Latency
EDC WR RD
CRC Write Latency
(CRCWL)
0
1
0
0
0
EDC Hold Pattern
13Inv CRC CRC
(CRCRL)
A3
A2
A1
A0
EDC Hold Pattern
EDC Hold Pattern Invert
for EDC1 + EDC3
A11
0
0
0
0
Pattern
...
EDC hold pattern not
inverted
0
1
1
1
1
1
Pattern
EDC hold pattern inverted
Burst Burst Burst Burst
Pos 3 Pos 2 Pos 1 Pos 0
A10 WR CRC
A9
RD CRC
0
1
On
Off
0
1
On
Off
A6
A5
A4 CRC Write Latency (CRCWL)
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
7
8
9
A8
A7 CRC Read Latency (CRCRL)
10
11
12
13
14
0
0
1
1
0
1
0
1
0
1
2
3
Figure 28. Mode Register 4 (MR4) Definition
EDC Hold pattern / EDC13 Invert
The 4‐bit EDC hold pattern is considered a background pattern transmitted on the EDC pins. The register
is initialized with all ’1’s. The pattern is shifted from right to left and repeated with every clock cycle. The
output timing is the same as of a READ burst.
CRC bursts calculated from WRITEs or READs will replace the EDC hold pattern for the duration of
those bursts, provided CRC is enabled for those bursts.
With each MRS command to MR4 that changes bits A0‐A3 or A9‐A11, the EDC hold pattern will be
undefined for t
.
MRD
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
52
H5GQ2H24AFR
The EDC hold pattern will not be transmitted when the device is in address training mode, in WCK2CK
training mode, in RDQS mode, in self refresh mode, in reset state, in power‐down state with the LP2 bit
set, or in scan mode.
With register bit A11 set High, EDC1 and EDC3 will transmit the inverted EDC hold pattern, resulting in
a pseudo‐differential pattern. Please note that this function is not available in x16 configuration. Bit A11 is
ignored for READ, WRITE and RDTR CRC bursts and the clock phase information in WCK2CK training
mode.
CRC Write Latency (CRCWL)
The value of the CRC write latency is loaded into register bits A4‐A6. If the DRAM vendor does not
support the Mode Register definition of CRCWL, the Mode Register settings will be ignored. In that case
the valid fixed latency is given with the DRAM vendor’s specification. The user must set the CRCWL
Mode Register bits.
Allowable Operating Frequency (Gbps)
Speed
CRCWL 14 CRCWL 13 CRCWL 12 CRCWL 11 CRCWL 10 CRCWL 9 CRCWL 8 CRCWL 7
6.0Gbps
5.5Gbps
5.0Gbps
4.5Gbps
4.0Gbps
CRC Read Latency (CRCRL)
The value of the CRC read latency is loaded into register bits A7‐A8. If the DRAM vendor does not support
the Mode Register definition of CRCRL, the Mode Register settings will be ignored. In that case the valid
fixed latency is given with the DRAM vendor’s specification. The user must set the CRCRL Mode Register
bits.
Allowable Operating Frequency (Gbps)
CRCRL 2 CRCRL 1
RDBI
Speed
6.0Gbps
5.5Gbps
5.0Gbps
4.5Gbps
4.0Gbps
ON/OFF
CRCRL 3
CRCRL 0
OFF
ON
OFF
ON
OFF
ON
OFF
ON
OFF
ON
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
53
H5GQ2H24AFR
Read CRC
Bit A9 controls the CRC calculation for READ bursts. When enabled, the calculated CRC pattern will be
transmitted on the EDC pins with the latency as programmed in the CRCRL field of this register. With
Read CRC being off, no CRC will be calculated for READ bursts, and the EDC hold pattern will be
transmitted instead.
Write CRC
Bit A10 controls the CRC calculation for WRITE bursts. When enabled, the calculated CRC pattern will be
transmitted on the EDC pins with the latency as programmed in the CRCWL field of this register. With
Write CRC being off, no CRC will be calculated for WRITE bursts, and the EDC hold pattern will be trans‐
mitted instead.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
54
H5GQ2H24AFR
4.6. MODE REGISTER 5 (MR5)
Mode Register 5 defines digital RAS, PLL band‐width and low power modes as shown in Figure 29.
The register is programmed via the MODE REGISTER SET (MRS) command with BA0=1, BA1=0, BA2=1
and BA3=0.
BA3 BA2 BA1 BA0 A12 A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
0
1
0
1
0
RFU
PLL Bandwidth LP3 LP2 RFU
‐3dB [MHz]
Peak [MHz]
Peak [dB]
PK
A5
A4
A3
BW
BW
PKLL
3dBLL
LL
A1
0
LP2
Off
On
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
22
45
55
60
65
70
80
85
6
9
＜ 2.14
＜ 2.14
＜ 1.58
＜ 1.87
＜ 1.87
＜ 1.87
＜ 1.87
＜ 2.14
1
14
17
21
26
33
35
A2
0
LP3
Off
On
1
Note 1) PLL BW characteristics is measured at 5Gbps
Note 2) PLL BW is linearly proportional to the data rate
Note 3) -3dB frequency is approximately interpolated from simulation
& measurement
Figure 29. Mode Register 5 (MR5) Definition
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
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H5GQ2H24AFR
Low Power Modes (LP2, LP3)
Bits A1‐A2 control several low power modes of the GDDR5 SGRAM. The modes are independent of each
other.
When bit A1 (LP2) is set, the WCK receivers may be turned off during power‐down.
When bit A2 (LP3) is set, RDTR, WRTR and LDFF commands are not allowed while a REF command is
being executed.
PLL Bandwidth
The PLL bandwidth may optionally be configured to match system characteristics. Each setting defines a
unique combination of ‐3dB corner frequency, peaking frequency and peaking magnitude.
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ2H24AFR
4.7. MODE REGISTER 6 (MR6)
Mode Register 6 controls the WCK2CK alignment point and defines VREFD related features such as
source, level, offsets, VREFD Merge and VREFD Auto Calibration mode, as shown in Figure 30.
The register is programmed via the MODE REGISTER SET (MRS) command with BA0=0, BA1=1, BA2=1
and BA3=0.
BA3 BA2 BA1 BA0 A12 A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
VREFD Offset
VREFD Offset
Auto VREFD WCK
VREFD Merge PIN
0
1
1
0
0
VREFD
Bytes in rows A‐F
Bytes in rows M‐U
WCK2CK
VREFD
Offset
VREFD
A4
A0
A11 A10 A9
A8
A7
A6
A5
Alignment Pt.
Offset
PD inside
DRAM
0 /
0 /
0
0
1
0
0
0
0
0
0
0
default
default
PD at pins
0
0
0
0
0
0
0
0
0
0
1
1
1
1
0
1
1
0
0
1
1
1
0
1
0
1
0
1
+1
+2
+3
+4
+5
+6
+7
0
0
0
0
0
0
0
0
0
0
1
1
1
1
0
1
1
0
0
1
1
1
0
1
0
1
0
1
+1
+2
+3
+4
+5
+6
+7
A1 VREFD Merge
0
1
Off
On
0 / Auto
(opt.)
0 / Auto
(opt.)
1
0
0
0
1
0
0
0
1
1
1
1
1
1
1
0
0
0
1
1
1
1
0
1
1
0
0
1
1
1
0
1
0
1
0
1
‐7
‐6
‐5
‐4
‐3
‐2
‐1
1
1
1
1
1
1
1
0
0
0
1
1
1
1
0
1
1
0
0
1
1
1
0
1
0
1
0
1
‐7
‐6
‐5
‐4
‐3
‐2
‐1
A3
VREFD
0
1
external VREFD pins
internally generated
Figure 30. Mode Register 6 (MR6) Definition
WCK2CK Alignment Point (WCKPIN)
Bit A0 defines the position of the alignment point between CK and WCK. When set to ‘0‘, the alignment
point will be at the phase detector inside the GDDR5 SGRAM. When set to ‘1‘, the alignment point will be
at the CK and WCK pins.
Input Reference Voltage for DQ and DBI# Pins
GDDR5 SGRAMs offer multiple options for the input reference voltage (Vref) for the DQ and DBI# pins,
as shown in Figure 31.
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ2H24AFR
Separate Vref circuits are associated with the bytes in rows A to F and the bytes in rows M to U, with
separate VREFD pins for the required external Vref.
The only mandatory mode is that Vref will be supplied externally at the VREFD pins. This mode is
configured with bits A1‐A3 and bit A7 in MR7 all set to ’0’.
VREFD Offsets
0.7*VDDQ
Half
VREFD
+
0.5*VDDQ
VREFD
VREFD
Merge
VREFD
+
‐
Receiver
VREFD
DQ/DBI#
+
Figure 31. VREFD Options
VREFD Merge
The VREFD Merge mode is enabled when bit A1 is set to’1’. The externally supplied VFRED and the
internally generated Vref will be merged, resulting in the average value of both. DRAM vendor
specifications should be checked for values of external resistors that may be connected to VREFD pins in
this VREFD Merge mode.
Auto VREFD Training
When Auto is set for VREFD offsets, the internal Vref generator must be trained. Bit A2 enables this
training; the bit is self‐clearing, meaning that it returns back to the value ‘0’ after the training has
completed.
Once the training mode is enabled, the GDDR5 SGRAM drives the EDC pins Low to indicate to the
controller that the training has started. The controller is now expected to send the specified PRBS pattern
to the GDDR5 SGRAM. Upon completion of the training, the GDDR5 SGRAM stops driving the EDC pins
Low, and the EDC pins will resume transmitting the EDC hold pattern. But, it is not supported.
VREFD
Bit A3 selects between external and internal Vref. The bit is “Don’t Care” when VREFD Merge mode is
selected.
VREFD Offsets and VREFD Auto Mode
It supports the capability to offset Vref independently for the upper 2 bytes and the lower 2 bytes. The
offset step values may be non‐linear and will vary across PVT.
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
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H5GQ2H24AFR
The vendors may optionally support the offset capability to be applied to the external Vref (not shown in
Figure 31).
The optional Auto setting for VREFD enables the GDDR5 SGRAM to search for its own optimal internal
Vref. There is no offset from this internally determined value (see also Auto VREFD Training).
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
59
H5GQ2H24AFR
4.8. MODE REGISTER 7 (MR7)
Mode Register 7 controls features like PLL Standby,Low Frequency mode, Auto Synchronization, Data
Preamble, operation, Half VREFD, VDD Range and DCC as shown in Figure 32.
The register is programmed via the MODE REGISTER SET (MRS) command with BA0=1, BA1=1, BA2=1
and BA3=0.
BA3 BA2 BA1 BA0 A12 A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
PLL
Stdby
Half Temp DQ Auto LF
VREFD Sense PreA Sync Mode
0
1
1
1
0
DCC
RFU
RFU
A11 A10
DCC
A0
PLL Standby
no DCC /
0
0
DCC off or hold / opt.
DCC start
0
1
Off
On
0
1
1
1
0
1
DCC reset l
RFU
A4 WCK2CK Auto Sync
0
1
Off
On
A5
Data Preamble
A3 Low Frequency Mode
0
1
Off
On
0
1
Off
On
A6
A7
Half VFRED
0
1
Off
On
0
1
0.7 * VDDQ
0.5 * VDDQ
Figure 32. Mode Register 7 (MR7) Definition
PLL Standby
When enabled by bit A0, the PLL is put into a standby mode upon entering self refresh even if the WCK
clocks are disabled. The max. duration the PLL can be held in this standby state (tSTDBY) is given in the
vendor‘s datasheet.
Upon exiting self refresh WCK2CK training is required to e.g. set the data synchronizers, and the PLL will
remain in the standby state until a PLL reset is issued, at which time the PLL will lock to the already stable
WCK signal in a significantly shorter time than tLK. The standby lock time tSTDBYLK is to be defined in
the vendor’s data sheet. If a normal lock is desired (e.g. if the frequency has changed) the PLL Standby bit
will first have to be disabled before issuing PLL reset.
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ2H24AFR
Low Frequency Mode
When Low Frequency Mode is enabled by bit A3, the power consumption of input receivers and clock
trees is reduced. The maximum operating frequency for this low frequency mode is given in the vendor‘s
datasheet.
WCK2CK Auto Synchronization
GDDR5 SGRAMs support a WCK2CK automatic synchronization mode that eliminates the need for
WCK2CK training upon power‐down exit or for reducing WCK2CK training time at low frequency. This
mode is controlled by bit A4. For a detailed description see WCK2CK Auto Synchronization in the section
entitled WCK2CK Training.
DQ(Data) Preamble
When enabled by bit A5, non‐gapless READ bursts will be preceded by a fixed data preamble on the DQ
and DBI# pins of 4 U.I. duration. The programmed READ latency does not change when the Data
Preamble is enabled. The pattern is not encoded with RDBI, however, if RDBI is disabled, the DBI# pins
will not toggle and drive a HIGH.
The on‐chip is enabled by bit A6.
A detailed description of the can be found in the VENDOR ID, TEMP SENSOR and SCAN section.
Half VREFD
This mode allows users to adjust the Vref level in case the GDDR5 SGRAM is operated without
termination: when bit A7 is set to’1’, a Vref level of nominally 0.5 * VDDQ is expected at the VREFD pin or
being generated internally (see Figure 31).
Duty Cycle Correction (DCC)
Bits A10 and A11 control the operation of the duty cycle corrector (DCC). The DCC can be used to cancel
out a static duty cycle error on the WCK clocks. For more details see Duty Cycle Correction (DCC) in the
section entitled OPERATION.
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responsability for use of circuits described. No patent licenses are implied.
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61
H5GQ2H24AFR
VREFD Selection Options Summary
The following table summarizes the complete set of VREFD selection options.
Table 15 VREFD Selection Options
MR6
A3
MR7
A7
Description
Internal VREFD
Half VREFD
0
0
1
1
0
1
0
1
External
External
Internal 0.7 * VDDQ
Internal 0.5 * VDDQ
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ2H24AFR
4.9 MODE REGISTER 9 (MR9)
Mode Register 9 controls features Pre & De‐Emphasis as shown in Figure 33.
The register is programmed via the MODE REGISTER SET (MRS) command with BA0=1, BA1=0, BA2=0
and BA3=1.
BA3 BA2 BA1 BA0 A12 A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Pre & De
‐ Emphasis
1
0
0
1
0
RFU
A1
A0
All Off
0
0
0
Pre‐emphasis
1
On
1
1
0
1
De‐emphasis
On
Figure 33. Mode Register 9 (MR9) Definition
Pre‐Emphasis & De‐Emphasis
The Pre‐Emphasis and De‐Emphasis is enabled by the combination of bit A0 and A1.
The Pre‐Emphasis is on when A1/A0 is 0/1 and the De‐Emphasis is on when A1/A0 is 1/0 or 1/1.
It will be helpful to reduce channel ISI (Inter Symbol Interference) at high speed operation when memory
is in read operation.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
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H5GQ2H24AFR
4.10 MODE REGISTER 15 (MR15)
Mode Register 15 controls address training mode (ADT) and access to Mode Registers 0 to 14 (MRE) as
shown in Figure 34.
The register is programmed via the MODE REGISTER SET (MRS) command with BA0=1, BA1=1, BA2=1
and BA3=1.
Mode Register 15 is a special register that operates in SDR addressing mode. Increased setup and hold
times as for command inputs are assumed to ensure the MRS command to this register is successful while
address training (ADT) has not taken place and the integrity of DDR addresses may not be guaranteed.
This is indicated by setting bits A0‐A7 to Don’t Care (“X”) which are paired with the usable bits (A8‐A11)
and the Mode Register address (BA0‐BA3).
BA3 BA2 BA1 BA0 A12 A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
MRE MRE
MF1 MF0
1
1
1
1
0
RFU ADT
X
X
X
X
X
X
X
X
A10 Address Training (ADT)
A9 MR0‐14 Enable MF=1
A8 MR0‐14 Enable MF=0
0
1
Off
On
0
1
Enabled
Disabled
0
1
Enabled
Disabled
Figure 34. Mode Register 15 (MR15) Definition
Address Training (ADT)
Address training mode is enabled and disabled with bit A10.
Mode Register 0‐14 Enable
When disabled by bit A8 (for SGRAMs configured to MF=0) or bit A9 (for SGRAMs configured to MF=1),
the GDDR5 SGRAM will ignore any MODE REGISTER SET command to Mode Registers 0 to 14. If
enabled, MODE REGISTER SET commands function as normal. MODE REGISTER SET commands to
Mode Register 15 (this register) are not affected and will always be executed.
This functional allows for individual configuration of two GDDR5 SGRAMS on a common address bus
without the use of a CS# pin.
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
64
H5GQ2H24AFR
5. OPERATION
5.1. COMMANDS
Table 16 Truth Table ‐ Commands
A6,
A7,
A9,
Operation
CKE#
A0‐
Symbol
A5
Previous Current
CS# RAS# CAS# WE# BA
A11 A10
A8
(A12) (A6) Notes
cycle
cycle
DES
NOP
MRS
ACT
L
L
L
L
X
X
L
L
H
L
L
L
X
H
L
X
H
L
X
H
L
X
X
X
X
X
X
X
X
X
X
X
X
1, 2, 8
1, 2, 8
1, 2, 3
1, 2, 4
DESELECT (NOP)
NO OPERATION (NOP)
MODE REGISTER SET
MRA
BA
Opcode
RA
L
H
H
ACTIVE (Select bank &
activate row)
RD
L
L
L
H
L
H
BA
L
L
L
X
CA
1, 2, 5,
9
READ (Select bank and
column, & start burst)
READ with Autoprecharge
Load FIFO
RDA
LDFF
RDTR
WOM
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
L
L
L
L
H
H
H
L
BA
X
L
H
H
L
L
L
H
L
L
L
X
X
X
X
CA
X
1, 2, 5
1, 2, 7
1, 2
X
H
L
X
READ Training
BA
CA
1, 2, 5
WRITE without Mask
(Select bank and column, &
start burst)
WOMA
WSM
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
BA
BA
BA
BA
BA
L
L
L
H
H
L
H
L
X
X
X
X
X
CA
CA
CA
CA
CA
1, 2, 5
1, 2, 5
1, 2, 5
1, 2, 5
1, 2, 5
WRITE without Mask with
Autoprecharge
WRITE with single‐byte
mask
WRITE with single‐byte
mask with Autoprecharge
WSMA
WDM
L
H
L
H
H
WRITE with double‐byte
mask (WDM)
WDMA
L
H
WRITE with double‐byte
mask with Autoprecharge
WRITE Training
WRTR
PRE
L
L
L
L
L
L
H
L
L
L
L
X
H
X
H
X
L
L
X
X
X
X
1, 2
1, 2
H
BA
PRECHARGE (Deactivate
row in bank or banks)
PREALL
REF
L
L
L
L
L
L
L
L
H
L
L
H
X
H
X
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
1, 2
1, 6
1
1
1
PRECHARGE ALL
REFRESH
H
L
H
L
X
H
X
H
L
X
H
X
H
L
POWER DOWN ENTRY
PDE
L
H
POWER DOWN EXIT
SELF REFRESH ENTRY
SELF REFRESH EXIT
PDX
SRE
SRX
H
L
L
H
L
L
X
X
X
X
X
X
X
X
X
X
X
X
1, 6
1
H
L
X
H
X
H
H
H
Notes:
1) H = Logic High Level; L = Logic Low Level; X = Don’t care: signal may be H or L, but not floating
2) Addresses shown are logical addresses; physical addresses are inverted when address bus inversion (ABI) is activated and ABI#=L
3) BA0‐BA3 provide the Mode Register address (MRA), A0‐A11 the opcode to be loaded
4) BA0‐BA3 provide the bank address (BA), A0‐A11 (A12) provide the row address (RA).
5) BA0‐BA3 provide the bank address, A0‐A5 (A6) provide the column address (CA); no sub‐word addressing within a burst of 8.
6) The command is Refresh when CKE#(n) = L and Self Refresh Entry when CKE#(n) = H.
7) BA0‐BA3 and CA are used to select burst location and data respectively
8) DESELECT and NOP are functionally interchangeable
9) In address training mode READ is decoded from the commands pins only with RAS# = H, CAS# = L, WE# = H
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
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H5GQ2H24AFR
Figure 35 and Figure 36 illustrate the timings associated with the Command and Address input as well as
Data input.
t
t
t
CK
CH
CL
CK#
CK
t
t
t
CMDS CMDH
CMDPW
COMMAND
ADDRESS
t
t
t
t
AS AH
t
t
APW
AS AH
APW
Donʹt Care
Figure 35. Command and Address Input Timings
WCK#
WCK
t
WCK2DQI
t
WCK2DQI
t
t
t
t
DIPW
DIPW
DIVW
DIVW
DQ/DBI#
(1 Pin)
Figure 36. Data Input Timings
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responsability for use of circuits described. No patent licenses are implied.
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5.2. DESELECT (NOP)
The DESELECT function (CS# HIGH) prevents new commands from being executed by the GDDR5
SGRAM. The GDDR5 SGRAM is effectively deselected. Operations already in progress are not affected.
5.3. NO OPERATION (NOP)
The NO OPERATION (NOP) command is used to instruct the selected GDDR5 SGRAM to perform a NOP
(CS# LOW). This prevents unwanted commands from being registered during idle or wait states. Opera‐
tions already in progress are not affected.
5.4. MODE REGISTER SET
The MODE REGISTER SET command is used to load the Mode Registers of the GDDR5 SGRAM. The bank
address inputs BA0‐BA3 select the Mode Register, and address puts A0‐A11(A12) determine the op‐code
to be loaded. See MODE REGISTER for a register definition. The MODE REGISTER SET command can
only be issued when all banks are idle and no bursts are in progress, and a subsequent executable com‐
mand cannot be issued until t
is met.
MRD
Mode Register Set
CK#
CK
CKE#
LOW
CS#
RAS#
CAS#
WE#
A8‐A11 (A12)
A0,A1,A6,A7
CO
A8,9,10,11, (12)
CO
A0,1,6,7
BA0‐BA3
A2‐A5
BA
BA0,1,2,3
CO
A2,3,4,5
RA = Row Address
CO = Op‐code
DONʹT CARE
BA = Bank Address
EN AP = Enable Auto Precharge
DIS AP = Disable Auto Precharge
Figure 37. MRS Command
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H5GQ2H24AFR
CK#
CK
PRE
ALL
CMD NOP
NOP
tRP
MRS
NOP
tMRD
A.C.
NOP
Old Setting
Updating Setting
New Setting
A.C. = any command allowed in bank idle state
Figure 38. Mode Register Set Timings
5.5. ACTIVATION
Before any READ or WRITE commands can be issued to a bank in the GDDR5 SGRAM, a row in that bank
must be “opened”. This is accomplished by the ACTIVE command (see Figure 39): BA0 ‐BA3 select the
bank, and A0‐A12 select the row to be activated. Once a row is open, a READ or WRITE command could
be issued to that row, subject to the t
specification.
RCD
A subsequent ACTIVE command to another row in the same bank can only be issued after the previous
row has been closed (precharged). The minimum time interval between two successive ACTIVE com‐
mands on the same bank is defined by t . A minimum time, t
, must have elapsed between opening
RC
RAS
and closing a row.
A subsequent ACTIVE command to another bank can be issued while the first bank is being accessed,
which results in a reduction of total row‐access overhead. The minimum time interval between two suc‐
cessive ACTIVE commands on different banks to different bank groups is defined by t
. With bank
RRDS
groups enabled, the minimum time interval between two successive ACTIVE commands to different
banks in the same bank group is defined by t . In all other cases the interval is defined by t
.
RRDS
RRDL
<Link>Figure shows the t
and t
definition.
RCD
RRD
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The row remains active until a PRECHARGE command (or READ or WRITE command with Auto Pre‐
charge) is issued to the bank.
Row Activation
CK#
CK
CKE#
LOW
CS#
RAS#
CAS#
WE#
A8‐A11 (A12)
A0, A1,A6,A7
RA
A8,9,10,11, (12)
RA
A0,1,6,7
BA0‐BA3
A2‐A5
BA
BA0,1,2,3
RA
A2,3,4,5
RA = Row Address
CA = Column Address
BA = Bank Address
DONʹT CARE
Figure 39. Active Command
T0
T1
T2
Ta0
Ta1
Tb0
Tb1
Tc0
Tc1
CK#
CK
CMD NOP
ADDR
ACT
NOP
tRCD
RD/WR
BA
NOP
PRE*
BA
NOP
tRP
ACT
NOP
BA
RA
BA
RA
RA
CA
RA
tRAS
tRC
(*) = could also be PREALL
BA = bank address; RA = row address; CA = column address
tRCD = tRCDRD, tRCDWR, tRCDRTR, tRCDWTR or tRCDLTR, depending on command
Donʹt Care
Figure 40. Bank Activation Command Cycle
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H5GQ2H24AFR
5.6. BANK RESTRICTIONS
There may be a need to limit the number of activates in a rolling window to ensure that the instantaneous
current supplying capability of the devices is not exceeded. To reflect the short term capability of the
GDDR5 SGRAM current supply, the parameter t
(four activate window) is defined. No more than 4
FAW
banks may be activated in a rolling t
window. Converting to clocks is done by dividing t
(ns) by
FAW
FAW
t
(ns) and rounding up to next integer value. As an example of the rolling window, if (t
/t ) rounds
CK
FAW CK
up to 10 clocks, and an ACTIVE command is issued at clock N, no more than three further ACITIVE com‐
mands may be issued at clocks N+1 through N+9 as illustrated in Figure 41.
To reflect a longer term GDDR5 SGRAM current supply capability, the parameter t
(thirty‐two acti‐
32AW
vate window) is defined. No more than 32 banks may be activated in a rolling t
window. Converting
32AW
to clocks is done by dividing t
(ns) by t (ns) and rounding up to next integer value. The use of a
32AW
CK
shorter and longer rolling activation window allows the GDDR5 SGRAM design to be optimized to handle
higher instantaneous currents within a shorter window while still limiting the current strain over a longer
period of time. This means that in general t
Figure42.
will be greater than or equal to 8* t
as shown in
FAW
32AW
It is preferable that GDDR5 SGRAMs have no rolling activation window restrictions (t
= 4 * t
).
RRD
FAW
CK#
CK
CMD ACT
ACT
ACT
ACT
ACT
ACT
ACT
ACT
t
t
t
t
t
t
t
RRD
RRD
RRD
RRD
RRD
RRD
FAW
t
+ 3
*
t
FAW
RRD
tRRD = tRRDL or tRRDS depending on Bank Groups on/off setting and accessed banks
Figure 41. tRRD and tFAW
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H5GQ2H24AFR
A.) t
> 8 * t
FAW
32AW
tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
t32AW
B.)
t
= 8 * t
32AW
FAW
tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
tFAW
t32AW
Figure 42. t32AW
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5.7. WRITE (WOM)
WRITE bursts are initiated with a WRITE command as shown in Figure 43. The bank and column
addresses are provided with the WRITE command and auto precharge is either enabled or disabled for
that access with the A8 pin. If auto precharge is enabled, the row being accessed is precharged at the com‐
pletion of the burst after t
(min) has been met. The length of the burst initiated with a WRITE command
RAS
is eight and the column address is unique for this burst of eight. There is no interruption nor truncation of
WRITE bursts.
WRITE
CK#
CK
CKE#
CS#
LOW
RAS#
CAS#
WE#
A10,A11
A0,A6
0,0
CA
CA
A9 (A12)
A1
A8
A7
EN AP
DIS AP
BA0‐BA3
A2‐A5
BA
CA
BA = Bank Address; CA = Column Address
EN AP = Enable Auto‐Precharge; DIS AP = Disable Auto‐Precharge
Figure 43. WRITE Command
During WRITE bursts, the first valid data‐in element must be available at the input latch after the Write
Latency (WL). The Write Latency is defined as WLmrs * tCK + t
+ t
+ t
, where
WCK2CKPIN
WCK2CK
WCK2DQI
WLmrs is the number of clock cycles programed in MR0, t
and CK at the pins when phase aligned at phase detector, t
is the phase offset between WCK
is the alignment error between WCK
WCK2CKPIN
WCK2CK
and CK at the GDDR5 SGRAM phase detector, and t
is the WCK to DQ/DBI# offset as measured
WCK2DQI
at the DRAM pins to ensure concurrent arrival at the latch. The total delay is relative to the data eye center
averaged over one double‐byte. The maximum skew within a double‐byte is defined by t
.
DQDQI
The data input valid window, t
, defines the time region when input data must be valid for reliable
DIVW
data capture at the receiver for any one worst‐case channel. It accounts for jitter between data and clock at
the latching point introduced in the path between the DRAM pads and the latching point. Any additional
jitter introduced into the source signals (i.e. within the system before the DRAM pad) must be accounted
for in the final timing budget together with the chosen PLL mode and bandwidth. t
is measured at
DIVW
the pins. t
is defined for the PLL off and on mode separately. In the case of PLL on, t
must be
DIVW
DIVW
specified for each supported bandwidth. In general t
is smaller than t
.
DIVW
DIPW
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The data input pulse width, t
, defines the minimum positive or negative input pulse width for any
DIPW
one worst‐case channel required for proper propagation of an external signal to the receiver. t
is mea‐
DIPW
sured at the pins. t
is independent of the PLL mode. In general t
is larger than t
.
DIPW
DIPW
DIVW
Upon completion of a burst, assuming no other WRITE data is expected on the bus the GDDR5 SGRAM
DQ and DBI# pins will be driven according to the ODT state. Any additional input data will be ignored.
Data for any WRITE burst may not be truncated with a subsequent WRITE command.
Data from any WRITE burst may be concatenated with data from a subsequent WRITE command. A con‐
tinuous flow of data can be maintained. The first data element from the new burst follows the last element
of a completed burst. The new WRITE command should be issued after the previous WRITE command
according to the t
timing. If that WRITE command is to another bank then an ACTIVE command must
CCD
precede the WRITE command and t
also must be met.
RCDWR
A READ can be issued any time after a WRITE command as long as the internal turn around time t
is
WTR
met. If that READ command is to another bank, then an ACTIVE command must precede the READ com‐
mand and t also must be met.
RCDRD
A PRECHARGE can also be issued to the GDDR5 SGRAM with the same timing restriction as the new
WRITE command if t is met. After the PRECHARGE command, a subsequent command to the same
RAS
bank cannot be issued until t is met.
RP
The data inversion flag is received on the DBI# pin to identify whether to store the true or inverted data. If
DBI# is LOW, the data will be stored after inversion inside the GDDR5 SGRAM and not inverted if DBI# is
HIGH. WRITE Data Inversion can be enabled (A9=0) or disabled (A9=1) using WDBI in MR1.
When enabled by the WRCRC flag in MR4, EDC data are returned to the controller with a latency of
(WLmrs + CRCWL) * t + t
+ t
+ t
, where CRCWL is the CRC Write latency
CK
WCK2CKPIN
WCK2CK
WCK2DQO
programmed in MR4 and t
is the WCK to DQ/DBI#/EDC phase offset at the DRAM pins.
WCK2DQO
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73
H5GQ2H24AFR
t
t
t
CK
WLmrs
CK#
CK
CH
CL
t
t
+ t
WCK2CK
WCK2CKPIN
WCK2DQI
WCK
WCK#
Case 1: Negative t
WCK2DQI
DQ/DBI#
(mean)
D0 D1 D2 D3 D4 D5 D6 D7
t
(min)
DQDQI
DQ/DBI#
(first bit)
D0 D1 D2 D3 D4 D5 D6 D7
t
(max)
DQDQI
DQ/DBI#
(last bit)
D0 D1 D2 D3 D4 D5 D6 D7
Case 2: Positive t
WCK2DQI
t
WCK2DQI
DQ/DBI#
(mean)
D0 D1 D2 D3 D4 D5 D6 D7
t
(min)
DQDQI
DQ/DBI#
(first bit)
D0 D1 D2 D3 D4 D5 D6 D7
t
(max)
DQDQI
DQ/DBI#
(last bit)
D0 D1 D2 D3 D4 D5 D6 D7
Donʹt Care
1) WLmrs is the WRITE latency programmed in Mode Register MR0.
2) Timings are shown with positive tWCK2CKPIN and tWCK2CK values. See WCK2CK timings for
tWCK2CKPIN and tWCK2CK ranges.
3) tWCK2DQI parameter values could be negative or positive numbers, depending on PLL‐on or PLL‐off mode
operation and design implementation. They also vary across PVT. Data training is required to determine
the actual tWCK2DQI value for stable WRITE operation.
4) tDQDQI defines the minimum to maximum variation of tWCK2DQI within a double byte (x32 mode) or
a single byte (x16 mode).
5) Data Read timings are used for CRC return timing from WRITE commands with CRC enabled.
Figure 44. WRITE Timings
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H5GQ2H24AFR
T0
T1
T2
T3
T3n
T4
T4n
T5
T6
T7
T8
CK#
CK
COMMAND
ADDRESS
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Bank a,
Col n
Col n
WL = WLmrs = 3
WCK
WCK#
DQ
DBI#
EDC
DO
n
DO
n+7
DBI
n+7
DBI
n
EDC Hold Pattern
DONʹT CARE
TRANSITIONING DATA
Notes: 1. WLmrs = 3 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (t =0, t =0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
WCK2CKPIN
WCK2CK
3. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins.
4. Before the WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and t must be met.
RCDWR
5.
t
= 0 is shown for illustration purposes.
WCK2DQI
Figure 45. Single WRITE without EDC
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H5GQ2H24AFR
T0
T1
T2
T3
T3n
T4
T4n
T5
T11
T12
T13
( (
) )
CK#
( (
CK
) )
( (
) )
COMMAND
ADDRESS
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
( (
) )
( (
) )
Bank a,
Col n
Col n
( (
) )
WL = WLmrs = 3
( (
WCK
) )
( (
WCK#
) )
( (
) )
DQ
DO
n
DO
n+7
( (
) )
DBI
n+7
DBI
n
DBI#
(
(
EDC Hold
Pattern
)
)
EDC
EDC
n+7
EDC Hold Pattern
EDC
( (
) )
n
CRCWL = 8
DONʹT CARE
TRANSITIONING DATA
Notes: 1. WLmrs = 3 and CRCWL = 8 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (t =0, t =0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
WCK2CKPIN
WCK2CK
3. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins.
4. Before the WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and t must be met.
RCDWR
5.
t
, t
= 0 is shown for illustration purposes.
WCK2DQI WCKDQO
Figure 46. Single WRITE with EDC
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H5GQ2H24AFR
T0
T1
T2
T5
T5n
T6
T6n
T7
T10
T10n T11
T11n
T12
( (
) )
( (
) )
CK#
( (
( (
CK
) )
) )
( (
) )
( (
) )
WRITE
NOP
ACT
WRITE
NOP
NOP
NOP
NOP
NOP
COMMAND
ADDRESS
( (
( (
) )
) )
( (
) )
( (
) )
Bank b,
Row
Bank b,
Col n
Bank a,
Col m
Row
Col n
Col m
WL = WLmrs = 5
( (
( (
) )
t
) )
RCDWR
WL = WLmrs = 5
( (
WCK
( (
) )
( (
) )
( (
WCK#
) )
) )
( (
) )
( (
) )
DQ
DO
m
DO
m+7
DO
n
DO
n+7
( (
) )
( (
) )
DBI
m+7
DBI
n+7
DBI#
DBI
m
DBI
n
DONʹT CARE
TRANSITIONING DATA
Notes: 1. WLmrs = 5 and t
= 3 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
RCDWR
2. WCK and CK are shown aligned (t
=0, t
=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
WCK2CK
WCK2CKPIN
3. EDC may be on or off. See Figure 4 for EDC Timing.
4. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins.
5. Before the WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and t must be met.
RCDWR
6.
t
= 0 is shown for illustration purposes.
WCK2DQI
Figure 47. Non-Gapless WRITEs
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H5GQ2H24AFR
T0
T1
T2
T3
T3n
T4
T4n
T5
T5n
T6
T7
T8
T2n
CK#
CK
WRITE
NOP
CCD
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
COMMAND
ADDRESS
t
Bank a,
Col m
Bank a,
Col n
Col m
Col n
WL = WLmrs = 2
WL = WLmrs = 2
WCK
WCK#
DQ
DO
m
DO DO
m+7
DO
n+7
n
DBI#
DBI
n+7
DBI
m
DBI
n
DBI
m+7
DONʹT CARE
TRANSITIONING DATA
Notes: 1. WLmrs = 2 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (t =0, t =0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
WCK2CKPIN
WCK2CK
3. EDC may be on or off. See Figure 4 for EDC Timing.
4. = t when bank groups is disabled or the second WRITE is to a different bank group, otherwise t
t
=t
.
CCD
CCDS
CCD CCDL
5. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins.
6. Before the WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and t must be met.
RCDWR
7.
t
= 0 is shown for illustration purposes.
WCK2DQI
Figure 48. Gapless WRITEs
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H5GQ2H24AFR
T0
T1
T3
T3n
T4
T4n
T5
Ta0
Ta6
Ta6n Ta7
Ta8
( (
) )
( (
) )
( (
) )
CK#
( (
( (
( (
CK
) )
) )
) )
( (
) )
( (
) )
( (
) )
WRITE
NOP
NOP
NOP
NOP
READ
NOP
NOP
NOP
COMMAND
ADDRESS
( (
( (
( (
) )
) )
) )
( (
) )
( (
) )
( (
) )
Bank a,
Col m
Bank b,
Col n
Col m
Col n
( (
( (
( (
) )
) )
) )
t
WTR
WL = WLmrs = 3
CL = CLmrs = 6
( (
( (
( (
WCK
) )
( (
) )
( (
) )
( (
WCK#
) )
) )
) )
( (
) )
( (
) )
( (
) )
DQ
DO
m
DO
m+7
DO
n
DO
n+7
( (
) )
( (
) )
( (
) )
DBI
m+7
DBI
n+7
DBI#
DBI
m
DBI
n
DONʹT CARE
TRANSITIONING DATA
Notes: 1. WLmrs = 3 and CLmrs = 6 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (t =0, t =0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
WCK2CKPIN
WCK2CK
3. EDC may be on or off. See Figure 4 for EDC Timing.
4. = t when bank groups is enabled and both WRITE and READ access banks in the same bank group, otherwise t
t
=t
.
WTR
WTRL
WTR WTRS
5. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins.
6. Before the READ and WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and t
respectively must be met.
or t
RCDWR
RCDRD
7.
t
, t
= 0 is shown for illustration purposes.
WCK2DQI WCKDQO
Figure 49. WRITE to READ
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H5GQ2H24AFR
T0
T1
T2
T3
T3n
T4
T4n
T5
T6
Ta0
PRE
Ta1
( (
) )
CK#
( (
CK
) )
( (
) )
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
COMMAND
ADDRESS
( (
) )
t
t
RP
WR
( (
) )
Bank a,
Col n
Bank a,
or all
Col n
WL = WLmrs = 3
( (
) )
WCK
WCK#
(
(
) )
( (
) )
( (
) )
DQ
DO
n
DO
n+7
( (
) )
DBI
n+7
DBI#
DBI
n
DONʹT CARE
TRANSITIONING DATA
Notes: 1. WLmrs = 3 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (t =0, t =0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
WCK2CKPIN
WCK2CK
3. EDC may be on or off. See Figure 4 for EDC Timing.
4. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins.
5. Before the WRITE command, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and t must be met.
RCDWR
6.
t
= 0 is shown for illustration purposes.
WCK2DQI
Figure 50. WRITE to PRECHARGE
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5.8. WRITE DATA MASK (DM)
The traditional method of using a DM pin for WRITE data mask must be abandoned for a new method.
Due to the high data rate of GDDR5 SGRAMs, bit errors are expected on the interface and are not recover‐
able when they occur on the traditional DM pin.
In GDDR5 the DM is sent to the SGRAM over the address following the bank/column address cycle associ‐
ated with the command, during the NOP/DESELECT commands between the WRITE command and the
next command. The DM is used to mask the corresponding data according to the following table.
Table 17: DM State
DM
Value
FUNCTION
DQ
Write Enable
Write Inhibit
0
1
Valid
X
Two additional WRITE commands that augment the traditional WRITE Without Mask (WOM) are
required for proper DM support:
•
WDM: WRITE‐With‐Doublebyte‐Mask:
2 cycle command where the 1st cycle carries address information and the 2nd cycle carries data mask
information (2 byte granularity);
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H5GQ2H24AFR
WDM
CK#
CK
CKE#
LOW
CS#
RAS#
CAS#
WE#
A9 (A12)
A1
CA
CA
DM
DM
DM
DM
A10,A11
A0,A6
0,1
A8
A7
EN AP
DIS AP
DM
DM
DM
DM
BA0‐BA3
A2‐A5
BA
CA
BA = Bank Address; CA = Column Address; DM = Data Mask
EN AP = Enable Auto‐Precharge; DIS AP = Disable Auto‐Precharge
Note: NOP shown as an example only
Figure 51. WRITE-With-Doublebyte-Mask Command
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H5GQ2H24AFR
T0
T1
T2
T3
T3n
T4
T4n
T5
T5n
T6
T7
T8
T2n
CK#
CK
WDM
NOP
CCD
WDM
NOP
NOP
NOP
NOP
NOP
NOP
COMMAND
ADDRESS
t
Bank a,
Col m
Bank a,
Col n
Col m
Col n
DM n
DM n
DM m
DM m
WL = WLmrs = 2
WL = WLmrs = 2
WCK
WCK#
DQ
DO
m
DO DO
m+7
DO
n+7
n
DBI#
DBI
n+7
DBI
m
DBI
n
DBI
m+7
DONʹT CARE
TRANSITIONING DATA
Notes: 1. WLmrs = 2 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (t =0, t =0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
WCK2CKPIN
WCK2CK
3. EDC may be on or off. See Figure 4 for EDC Timing.
4. = t when bank groups is disabled or the second WRITE is to a different bank group, otherwise t
t
=t
.
CCD
CCDS
CCD CCDL
5. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins.
6. Before the WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and t must be met.
RCDWR
7.
t
= 0 is shown for illustration purposes.
WCK2DQI
Figure 52. WDM Timing
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H5GQ2H24AFR
•
WSM: WRITE‐With‐Singlebyte‐Mask:
3 cycle command where the 1st cycle carries address information, the 2nd and 3rd cycle carry data mask
information
WSM
CK#
CK
CKE#
CS#
LOW
RAS#
CAS#
WE#
A9 (A12)
A1
CA
CA
DM
DM
DM
DM
DM
DM
DM
DM
A10,A11
A0,A6
0,1
A8
A7
EN AP
DIS AP
DM
DM
DM
DM
DM
DM
DM
DM
BA0‐BA3
A2‐A5
BA
CA
BA = Bank Address; CA = Column Address; DM = Data Mask
EN AP = Enable Auto‐Precharge; DIS AP = Disable Auto‐Precharge
Note: NOP shown as an example only
Figure 53. WRITE-With-Singlebyte-Mask Command
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H5GQ2H24AFR
T0
T1
T2
T5
T5n
T6
T6n
T7
T10
T10n T11
T11n
T12
( (
) )
( (
) )
CK#
( (
( (
CK
) )
) )
( (
) )
( (
) )
WSM
NOP
NOP
WSM
NOP
NOP
NOP
NOP
NOP
COMMAND
ADDRESS
( (
( (
) )
) )
( (
) )
( (
) )
Bank a,
Col m
Bank b,
DM m
DM n
DM m
Col n
DM n
DM n
DM n
Col m
DM m
DM m
( ( Col n
) )
( (
) )
WL = WLmrs = 5
WL = WLmrs = 5
( (
WCK
(
(
) )
( (
) )
( (
WCK#
) )
( (
) )
( (
) )
) )
DQ
DO
m
DO
m+7
DO
n
DO
n+7
( (
( (
) )
) )
DBI
m+7
DBI
n+7
DBI#
DBI
m
DBI
n
DONʹT CARE
TRANSITIONING DATA
Notes: 1. WLmrs = 5 and t
= 3 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
RCDWR
2. WCK and CK are shown aligned (t
=0, t
=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
WCK2CK
WCK2CKPIN
3. EDC may be on or off. See Figure 4 for EDC Timing.
4. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins.
5. Before the WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and t must be met.
RCDWR
6.
t
= 0 is shown for illustration purposes.
WCK2DQI
Figure 54. WSM Timing
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H5GQ2H24AFR
Table 18 WDM Mapping for mirrored & non‐mirrored x32 Mode
Byte and Burst Position Masked during WDM
ADR
ADR CK Rising Edge
ADR
ADR CK# Rising Edge
Byte
Burst
Byte
Burst
0
1
2
3
0
1
2
3
4
5
6
7
4
5
6
7
A10
A9
DQ[15:0]
DQ[15:0]
DQ[15:0]
DQ[15:0]
DQ[31:16]
DQ[31:16]
DQ[31:16]
DQ[31:16]
A0
A1
A2
A3
A4
A5
A6
A7
DQ[15:0]
DQ[15:0]
DQ[15:0]
DQ[15:0]
DQ[31:16]
DQ[31:16]
DQ[31:16]
DQ[31:16]
BA0
BA3
BA2
BA1
A11
A8
Table 19 WDM Mapping for non‐mirrored x16 Mode
Byte and Burst Position Masked during WDM
ADR CK Rising Edge
ADR
ADR CK# Rising Edge
ADR
A10
A9
Byte
Burst
Byte
Burst
0
1
2
3
0
1
2
3
4
5
6
7
4
5
6
7
DQ[7:0]
A0
A1
A2
A3
A4
A5
A6
A7
DQ[7:0]
DQ[7:0]
DQ[7:0]
BA0
BA3
BA2
BA1
A11
A8
DQ[7:0]
DQ[7:0]
DQ[7:0]
DQ[7:0]
DQ[23:16]
DQ[23:16]
DQ[23:16]
DQ[23:16]
DQ[23:16]
DQ[23:16]
DQ[23:16]
DQ[23:16]
Table 20 WDM Mapping for mirrored x16 Mode
Byte and Burst Position Masked during WDM
ADR CK Rising Edge
ADR
ADR CK# Rising Edge
ADR
A10
A9
Byte
Burst
Byte
Burst
0
1
2
3
0
1
2
4
5
6
7
4
5
6
DQ[15:8]
DQ[15:8]
DQ[15:8]
DQ[15:8]
DQ[31:24]
DQ[31:24]
DQ[31:24]
A0
A1
A2
A3
A4
A5
A6
DQ[15:8]
DQ[15:8]
DQ[15:8]
DQ[15:8]
DQ[31:24]
DQ[31:24]
DQ[31:24]
BA0
BA3
BA2
BA1
A11
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H5GQ2H24AFR
Table 20 WDM Mapping for mirrored x16 Mode
Byte and Burst Position Masked during WDM
3
7
A8
DQ[31:24]
A7
DQ[31:24]
Table 21 WSM Mapping for mirrored and non‐mirrored x32 Mode
Byte and Burst Position Masked During WSM
ADR CK 1st rising Edge
ADR CK# 1st rising Edge
ADR CK 2nd rising Edge
ADR CK# 2nd rising Edge
ADR
A10
A9
Byte
Burst
ADR
A0
A1
A2
A3
A4
A5
A6
A7
Byte
Burst
ADR
A10
A9
Byte
Burst
ADR
A0
A1
A2
A3
A4
A5
A6
A7
Byte
Burst
0
1
2
3
0
1
2
3
4
5
6
7
4
5
6
7
0
1
2
3
0
1
2
3
4
5
6
7
4
5
6
7
DQ[7:0]
DQ[7:0]
DQ[15:8]
DQ[15:8]
DQ[15:8]
DQ[15:8]
DQ[31:24]
DQ[31:24]
DQ[31:24]
DQ[31:24]
DQ[15:8]
DQ[15:8]
DQ[15:8]
DQ[15:8]
DQ[31:24]
DQ[31:24]
DQ[31:24]
DQ[31:24]
DQ[7:0]
DQ[7:0]
BA0
BA3
BA2
BA1
A11
A8
DQ[7:0]
DQ[7:0]
BA0
BA3
BA2
BA1
A11
A8
DQ[7:0]
DQ[7:0]
DQ[23:16]
DQ[23:16]
DQ[23:16]
DQ[23:16]
DQ[23:16]
DQ[23:16]
DQ[23:16]
DQ[23:16]
Table 22 WSM Mapping for non‐mirrored x16 Mode
Byte and Burst Position Masked During WSM
ADR CK 1st rising Edge
ADR CK# 1st rising Edge ADR CK 2nd rising Edge ADR CK# 2nd rising Edge
ADR
A10
A9
Byte
Burst
ADR
A0
A1
A2
A3
A4
A5
A6
A7
Byte
Burst
Byte
Burst
Byte
Burst
0
1
2
3
0
1
2
3
4
5
6
7
4
5
6
7
0
1
2
3
0
1
2
3
4
5
6
7
4
5
6
7
DQ[7:0]
DQ[7:0]
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
DQ[7:0]
DQ[7:0]
BA0
BA3
BA2
BA1
A11
A8
DQ[7:0]
DQ[7:0]
DQ[7:0]
DQ[7:0]
DQ[23:16]
DQ[23:16]
DQ[23:16]
DQ[23:16]
DQ[23:16]
DQ[23:16]
DQ[23:16]
DQ[23:16]
Table 23 WSM Mapping for mirrored x16 Mode
Byte and Burst Position Masked During WSM
ADR CK 1st rising Edge ADR CK# 1st rising Edge
ADR CK 2nd rising Edge
ADR CK# 2nd rising Edge
Byte
Burst
Byte
Burst
ADR
A10
A9
Byte
Burst ADR
Byte
Burst
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
‐
‐
‐
‐
‐
‐
‐
‐
DQ[15:8]
DQ[15:8]
DQ[15:8]
DQ[15:8]
A0
A1
A2
A3
DQ[15:8]
DQ[15:8]
DQ[15:8]
DQ[15:8]
BA0
BA3
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ2H24AFR
Table 23 WSM Mapping for mirrored x16 Mode
Byte and Burst Position Masked During WSM
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
‐
‐
‐
‐
‐
‐
‐
‐
BA2
BA1
A11
A8
DQ[31:24]
DQ[31:24]
DQ[31:24]
DQ[31:24]
A4
A5
A6
A7
DQ[31:24]
DQ[31:24]
DQ[31:24]
DQ[31:24]
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5.9. READ
A READ burst is initiated with a READ command as shown in Figure 55. The bank and column addresses
are provided with the READ command and auto precharge is either enabled or disabled for that access
with the A8 address. If auto precharge is enabled, the row being accessed is precharged at the completion
of the burst after t
(min) has been met. The length of the burst initiated with a READ command is eight
RAS
and the column address is unique for this burst of eight. There is no interruption nor truncation of READ
bursts.
READ
CK#
CK
CKE#
CS#
LOW
RAS#
CAS#
WE#
A10,A11
A0,A6
0,0
CA
CA
A9 (A12)
A1
A8
A7
EN AP
DIS AP
BA0‐BA3
A2‐A5
BA
CA
BA = Bank Address; CA = Column Address
EN AP = Enable Auto‐Precharge; DIS AP = Disable Auto‐Precharge
Figure 55. READ Command
During READ bursts, the first valid data‐out element will be available after the CAS latency (CL). The CAS
Latency is defined as CLmrs * tCK + t
+ t
+ t
, where CLmrs is the number of
WCK2CKPIN
WCK2CK
WCK2DQO
clock cycles programed in MR0, t
phase aligned at phase detector, t
is the phase offset between WCK and CK at the pins when
is the alignment error between WCK and CK at the GDDR5
WCK2CKPIN
WCK2CK
SGRAM phase detector, and t
is the WCK to DQ/DBI#/EDC offset as measured at the DRAM
WCK2DQO
pins. The total delay is relative to the data eye initial edge averaged over one double‐byte. The maximum
skew within a double‐byte is defined by t
.
DQDQO
Upon completion of a burst, assuming no other READ command has been initiated, all DQ and DBI# pins
will drive a value of ʹ1ʹ and the ODT will be enabled at a maximum of 1 t later. The drive value and ter‐
CK
mination value may be different due to separately defined calibration offsets. If the ODT is disabled, the
pins will drive Hi‐Z.
Data from any READ burst may be concatenated with data from a subsequent READ command. A contin‐
uous flow of data can be maintained. The first data element from the new burst follows the last element of
a completed burst. The new READ command should be issued after the previous READ command accord‐
ing to the t
timing. If that READ command is to another bank then an ACTIVE command must pre‐
CCD
cede the READ command and t
also must be met.
RCDRD
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A WRITE can be issued any time after a READ command as long as the bus turn around time t
is met.
RTW
If that WRITE command is to another bank, then an ACTIVE command must precede the second WRITE
command and t also must be met.
RCDWR
A PRECHARGE can also be issued to the GDDR5 SGRAM with the same timing restriction as the new
READ command if t is met. After the PRECHARGE command, a subsequent command to the same
RAS
bank cannot be issued until t is met.
RP
The data inversion flag is driven on the DBI# pin to identify whether the data is true or inverted data. If
DBI# is HIGH, the data is not inverted, and if LOW it is inverted. READ Data Inversion can be enabled
(A8=0) or disabled (A8=1) using RDBI in MR1.
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When enabled by the RDCRC flag in MR4, EDC data is returned to the controller with a latency of (CLmrs
+ CRCRL) * t + t
+ t
+ t
, where CRCRL is the CRC Read latency pro‐
WCK2DQO
CK
WCK2CKPIN
WCK2CK
grammed in MR4.
t
t
t
CK
CH
CL
CLmrs
CK#
CK
t
t
+ t
WCK2CK
WCK2CKPIN
WCK2DQO
WCK
WCK#
Case 1: Negative t
WCK2DQO
DQ/DBI#/EDC
(mean)
D0 D1 D2 D3 D4 D5 D6 D7
t
(min)
DQDQO
DQ/DBI#/EDC
(first bit)
D0 D1 D2 D3 D4 D5 D6 D7
t
(max)
DQDQO
DQ/DBI#/EDC
(last bit)
D0 D1 D2 D3 D4 D5 D6 D7
Case 2: Positive t
WCK2DQO
t
WCK2DQO
DQ/DBI#/EDC
(mean)
D0 D1 D2 D3 D4 D5 D6 D7
t
(min)
DQDQO
DQ/DBI#/EDC
(first bit)
D0 D1 D2 D3 D4 D5 D6 D7
t
(max)
DQDQO
DQ/DBI#/EDC
(last bit)
D0 D1 D2 D3 D4 D5 D6 D7
Donʹt Care
1) CLmrs is the CAS latency programmed in Mode Register MR0.
2) Timings are shown with positive tWCK2CKPIN and tWCK2CK values. See WCK2CK timings for
tWCK2CKPIN and tWCK2CK ranges.
3) tWCK2DQO parameter values could be negative or positive numbers, depending on PLL‐on or PLL‐off mode
operation and design implementation. They also vary across PVT. Data training is required to determine
the actual tWCK2DQO value for stable READ operation.
4) tDQDQO defines the minimum to maximum variation of tWCK2DQO within a double byte (x32 mode) or
a single byte (x16 mode).
5) tDQDQO also applies for CRC data from WRITE and READ commands with CRC enabled, the EDC hold
pattern, and the data strobe in RDQS mode.
Figure 56. READ Word Lane Timing
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H5GQ2H24AFR
T0
T1
T2
T5
T6
T6n
T7
T7n
T8
T9
T10
( (
) )
CK#
( (
CK
) )
( (
) )
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
COMMAND
( (
) )
( (
) )
Bank a,
ADDRESS
Col n
Col n
( (
) )
CL = CLmrs = 6
( (
WCK
) )
( (
WCK#
) )
( (
) )
DQ
DO
n
DO
n+7
( (
) )
DBI
n+7
DBI#
DBI
n
( (
) )
( (
ODT
EDC
ODT Enabled
EDC Hold Pattern
ODT Enabled
ODT Disabled
) )
( (
) )
( (
) )
DONʹT CARE
TRANSITIONING DATA
Notes: 1. CLmrs = 6 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (t =0, t =0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
WCK2CKPIN
WCK2CK
3. Before the READ command, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and t
must be met.
RCDRD
4.
t
= 0 is shown for illustration purposes.
WCK2DQO
Figure 57. Single READ without EDC
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H5GQ2H24AFR
T6n
T0
T1
T6
T7
T7n
T8
T9
T10
T10n
T11
T11n
T12
( (
) )
CK#
( (
CK
) )
( (
) )
COMMAND
ADDRESS
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
( (
) )
( (
) )
Bank a,
Col n
Col n
( (
) )
CL = CLmrs = 6
( (
WCK
) )
( (
WCK#
) )
( (
) )
DQ
DO
n
DO
n+7
( (
) )
DBI
n+7
DBI#
DBI
n
(
(
) )
( (
EDC Hold
Pattern
EDC
EDC
n+7
EDC Hold Pattern
EDC
n
) )
CRCRL = 4
DONʹT CARE
TRANSITIONING DATA
Notes: 1. CLmrs = 6 and CRCRL = 4 are shown as examples. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (t =0, t =0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
WCK2CKPIN
WCK2CK
3. Before the READ command, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and t
must be met.
RCDRD
4.
t
= 0 is shown for illustration purposes.
WCK2DQO
Figure 58. Single READ with EDC
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H5GQ2H24AFR
T10n
T0
T1
T3
T6
T6n
T7
T7n
T8
T9
T9n
T10
T11
( (
) )
( (
) )
CK#
( (
( (
CK
) )
) )
( (
) )
( (
) )
READ
NOP
CCD
READ
NOP
NOP
NOP
NOP
NOP
NOP
COMMAND
ADDRESS
( (
( (
) )
) )
t
( (
) )
( (
Bank a,
Col m
Bank b,
Col n
) )
Col m
Col n
( (
( (
) )
) )
CL = CLmrs = 6
CL = CLmrs = 6
( (
( (
WCK
WCK#
) )
( (
) )
( (
) )
) )
( (
) )
( (
) )
DQ
DO
m
DO
m+7
DO
n
DO
n+7
( (
) )
( (
) )
DBI
m+7
DBI
n+7
DBI#
DBI
m
DBI
n
DONʹT CARE
TRANSITIONING DATA
Notes: 1. CLmrs = 6 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (t =0, t =0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
WCK2CKPIN
WCK2CK
3. EDC may be on or off. See Figure 58 for EDC Timing.
4. = t when bank groups are enabled and both READs access banks in the same bank group; otherwise t =t
CCD CCDS
t
.
CCD
CCDL
5. Before the READ commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and t
must be met.
RCDRD
6.
t
= 0 is shown for illustration purposes.
WCK2DQI
Figure 59. Non-Gapless READs
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responsability for use of circuits described. No patent licenses are implied.
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T0
T1
T2
T3
T6
T6n
T7
T7n
T8
T8n
T9
T9n
T10
( (
) )
CK#
( (
CK
) )
( (
) )
READ
NOP
CCD
READ
NOP
NOP
NOP
NOP
NOP
NOP
COMMAND
ADDRESS
( (
) )
t
( (
) )
Bank b,
Col n
Bank a,
Col m
Col m
Col n
( (
) )
CL = CLmrs = 6
(
(
WCK
WCK#
) )
( (
) )
( (
) )
DQ
DO
m
DO DO
m+7
DO
n+7
n
( (
) )
DBI#
DBI
n+7
DBI
m
DBI
n
DBI
m+7
DONʹT CARE
TRANSITIONING DATA
Notes: 1. CLmrs = 6 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (t =0, t =0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
WCK2CKPIN
WCK2CK
3. EDC may be on or off. See Figure 58 for EDC Timing.
4. = t when bank groups are disabled or the second READ is to a different bank group; otherwise t =t
CCD CCDL
t
.
CCD
CCDS
5. Before the READ commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and t
must be met.
RCDRD
6.
t
= 0 is shown for illustration purposes.
WCK2DQI
Figure 60. Gapless READs
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
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H5GQ2H24AFR
T6n
T11n
T0
T1
T6
T7
T7n
T8
T9
T10
T10n T11
T12
( (
) )
CK#
( (
CK
) )
( (
) )
READ
t
NOP
NOP
WRITE
NOP
NOP
NOP
NOP
NOP
COMMAND
ADDRESS
( (
) )
RTW
( (
) )
Bank a,
Col m
Bank b,
Col n
Col m
Col n
( (
) )
CL = CLmrs = 6
WL = WLmrs = 3
( (
WCK
WCK#
) )
( (
) )
( (
) )
DQ
DO
m
DO
m+7
DO
n
DO
n+7
( (
) )
DBI
m+7
DBI
n+7
DBI#
DBI
m
DBI
n
DONʹT CARE
TRANSITIONING DATA
Notes: 1. WLmrs = 3 and CLmrs = 6 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (t =0, t =0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
WCK2CKPIN
WCK2CK
3. EDC may be on or off. See Figure 58 for EDC Timing.
4. = t when bank groups is enabled and both WRITE and READ access banks in the same bank group, otherwise t
t
=t
.
WTR
WTRL
WTR WTRS
5. For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins.
6. Before the READ and WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and t
respectively must be met.
or t
RCDWR
RCDRD
7.
t
, t
= 0 is shown for illustration purposes.
WCK2DQI WCKDQO
Figure 61. READ to WRITE
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T0
T1
T2
T3
T4
T5
T6
T6n
T7
T7n
T8
CK#
CK
READ
NOP
PRE
NOP
NOP
NOP
NOP
NOP
NOP
COMMAND
ADDRESS
t
t
RP
RTP
Bank a,
Col n
Bank a,
or all
Col n
CL = CLmrs = 6
WCK
WCK#
DQ
DO
n
DO
n+7
DBI
n+7
DBI#
DBI
n
DONʹT CARE
TRANSITIONING DATA
Notes: 1. CLmrs = 6 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (t =0, t =0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
WCK2CKPIN
WCK2CK
3. EDC may be on or off. See Figure 58 for EDC Timing.
4. = t when bank groups are enabled and the PRECHARGE command accesses the same bank; otherwise t
t
= t
.
RTP
RTPL
RTP
RTPS
5. Before the READ commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and t
must be met.
RCDRD
6.
t
= 0 is shown for illustration purposes.
WCK2DQO
Figure 62. READ to PRECHARGE
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5.10. DQ PREAMBLE
DQ preamble is a feature for GDDR5 SGRAMs that is used for READ data. DQ preamble conditions the
DQs for better signal integrity on the initial data of a burst.
Once enabled by bit 5 in MR7, the DQ preamble will precede all READ bursts, including non‐consecutive
READ bursts with a minimum gap of 1 t , as shown in Figure 59. When enabled, the DQ preamble pat‐
CK
tern applies to all DQ and DBI# pins in a byte, and the same pattern is used for all bytes as shown in
Figure63. DQ preamble is enabled or disabled for all bytes. The EDC pin in each byte is not included in the
DQ preamble. If ODT is enabled, the ODT is disabled 1 t before the start of the preamble pattern as
CK
shown in Figure 64.
The preamble pattern on the DBI# pin is only enabled if the MR for RDBI is enabled (MR1 A8 bit). During
the preamble the DBI# pin is treated as another DQ pin and the preamble pattern on the DQs is not
encoded with RDBI. If RDBI is disabled, then the DBI# pin drives ODT.
Byte 0 Byte 1 Byte 2 Byte 3
Idle
Preamble
Burst
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
DBI0#
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ23
DQ22
DQ21
DQ20
DQ19
DQ18
DQ17
DQ16
DBI2#
DQ31
DQ30
DQ29
DQ28
DQ27
DQ26
DQ25
DQ24
DBI3#
Max 0’s
1
1
1
1
1
1
1
1
1
0
1
1
1
1
1
1
1
1
1
1
0
1
1
1
1
1
1
1
1
1
0
0
1
0
1
0
1
0
1
0
5
1
0
1
0
1
0
1
0
1
4
0
1
0
1
0
1
0
1
0
5
1
0
1
0
1
0
1
0
1
4
x
x
x
x
x
x
x
x
x
4
x
x
x
x
x
x
x
x
x
4
x
x
x
x
x
x
x
x
x
4
x
x
x
x
x
x
x
x
x
4
x
x
x
x
x
x
x
x
x
4
x
x
x
x
x
x
x
x
x
4
x
x
x
x
x
x
x
x
x
4
x
x
x
x
x
x
x
x
x
4
1
1
1
1
1
1
1
1
0
DQ8
DBI1#
Time
Notes:
1) The number of Max 0’s in the burst is 4 only if RDBI is enabled. Max 0‘s is on a per byte basis and does not include the EDC pin.
2) x = Valid Data
Figure 63. DQ Preamble Pattern
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ2H24AFR
T0
T1
T4
T5
T5n
T6
T6n
T7
T7n
T8
T9
T10
( (
) )
CK#
( (
CK
) )
( (
) )
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
COMMAND
ADDRESS
( (
) )
( (
) )
Bank a,
Col n
Col n
CL = CLmrs = 6
( (
) )
( (
WCK
WCK#
) )
( (
) )
( (
) )
DQ6
DO
n
DO
n+7
( (
) )
DQ7
DO
n
DO
n+7
( (
) )
DBI
n+7
DBI#
ODT
DBI
n
( (
) )
( (
ODT Enabled
ODT Disabled
ODT Enabled
) )
DONʹT CARE
TRANSITIONING DATA
Notes: 1. CLmrs = 6 is shown as an example. Actual supported values will be found in the MR and AC timings sections.
2. WCK and CK are shown aligned (t =0, t =0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
WCK2CKPIN
WCK2CK
3. EDC may be on or off. See Figure 58 for EDC Timing.
4. DQ6, DQ7 and the DBI# pin are shown to illustrate the DQ preamble pattern. RDBI is Enabled (MR1 A8=0).
5. Before the READ commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and t
must be met.
RCDRD
6.
t
= 0 is shown for illustration purposes.
WCK2DQO
Figure 64. Preamble Timing Diagram
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H5GQ2H24AFR
5.11. READ and WRITE DATA BUS INVERSION (DBI)
The GDDR5 SGRAM Data Bus Inversion (DBIdc) reduces the DC power consumption on data pins, as the
number of DQ lines driving a low level can be limited to 4 within a byte. DBIdc is evaluated per byte.
There is one DBI# pin per byte: DBI0# is associated with DQ0‐DQ7, DBI1# with DQ8‐DQ15, DBI2# with
DQ16‐DQ23 and DBI3# with DQ24‐DQ31.
The DBI# pins are bidirectional active Low double data rate (DDR) signals. For Writes, they are sampled
by the GDDR5 SGRAM along with the DQ of the same byte. For Reads, they are driven by the GDDR5
SGRAM along with the DQ of the same byte.
Once enabled by the corresponding RDBI Mode Register bit, the GDDR5 SGRAM inverts read data and
sets DBI# Low, when the number of ’0’ data bits within a byte is greater than 4; otherwise the GDDR5
SGRAM does not invert the read data and sets DBI# High, as shown in Figure 65.
Once enabled by the corresponding WDBI Mode Register bit, the GDDR5 SGRAM inverts write data
received on the DQ inputs in case DBI# was sampled Low, or leaves the data non‐inverted in case DBI#
was sampled High, as shown in Figure 66.
8
from
DRAM
core
8
DQ
’0’
count
>4
DBI#
from Mode Register:
0 = enabled
1 = disabled
Figure 65. Example of Data Bus Inversion Logic for READs
8
8
to
DQ
DRAM
core
DBI#
from Mode Register:
0 = enabled
1 = disabled
Figure 66. Example of Data Bus Inversion Logic for WRITEs
The flow diagram in Figure 67 illustrates the DBIdc operation. In any case, the transmitter (the controller
for WRITEs, the GDDR5 SGRAM for READs) decides whether to invert or not invert the data conveyed on
the DQs. The receiver (the GDDR5 SGRAM for WRITEs, the controller for READs) has to perform the
reverse operation based on the level on the DBI# pin. Data input and output timing parameters are only
valid with DBI being enabled and a maximum of 4 data lines per byte driven Low.
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100
H5GQ2H24AFR
Logical
output data
Transmitter
Determine ’0’ count
in data byte
’0’ count
> 4 ?
No
Yes
DBI# = ’H’
Don’t invert
data byte
DBI# = ’L’
Invert
data byte
DBI# = ’H’
Don’t invert
data byte
DBI# = ’L’
Invert
data byte
Logical
input data
Receiver
Figure 67. DBI Flow Diagram
DBI# Pin Special Function Overview
The DBI# pin has special behavior compared to DQ pins because of the ability to enable and disable it via
MRS. For either WRITE or READ DBI# pin training, both DBI READ and DBI WRITE in MRS must be
enabled. The behavior of the DBI# pin in various mode register settings is summarized below:
If both DBI READ and DBI WRITE are enabled:
•
•
Pin drives DBI FIFO data with RDTR command
DBI# pin FIFO accepts WRTR data with the WRTR command
If only DBI READ is enabled:
DBI# pin drives ODT when not READ or RDTR
If only DBI WRITE is enabled:
Pin always drives ODT (unless RESET)
If both DBI READ and DBI WRITE are disabled:
DBI# pin drives ODT (unless RESET)
•
•
•
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H5GQ2H24AFR
5.12. ERROR DETECTION CODE (EDC)
The GDDR5 SGRAM provides error detection on the data bus to improve system reliability. The device
generates a checksum per byte lane for both READ and WRITE data and returns the checksum to the con‐
troller. Based on the checksum, the controller can decide if the data (or the returned CRC) was transmitted
in error and retry the READ or WRITE command. The GDDR5 SGRAM itself does not perform any error
correction. The features of the EDC are:
•
•
•
8 bit checksum on 72 bits (9 channels x 8 bit burst)
dedicated EDC transfer pin per 9 channels (4x per GDDR5 SGRAM)
asymmetrical latencies on EDC transfer for Reads and Writes
The CRC polynomial used by the GDDR5 SGRAM is an ATM‐8 HEC, X^8+X^2+X^1+1. The starting seed
value is set in hardware at “zero”. Table 24 shows the error types that are detectable and the detection rate.
Table 24 Error Correction Details
Error Type
Random Single Bit
Random Double Bit
Random Odd Count
Burst <= 8
Detection Rate
100%
100%
100%
100%
The bit ordering calculation for the CRC error detection is optimized for errors in the time burst direction.
Figure 68 shows the bit orientation on a byte lane basis.
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H5GQ2H24AFR
Burst 8 Ordering (2 tCK
)
T0
T0 + 8 U.I.
CRC Data Input
DQ/DBI# bit ordering
0
1
2
2
3
3
4
4
5
5
6
6
7
7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DBI0#
0
8
1
9
10 11 12 13 14 15
16 17 18 19 20 21 22 23
24 25 26 27 28 29 30 31
32 33 34 35 36 37 38 39
40 41 42 43 44 45 46 47
48 49 50 51 52 53 54 55
56 57 58 59 60 61 62 63
64 65 66 67 68 69 70 71
8
2
7
6
5
4
3
2
X + X + X + 1 = 0 x 83 = ( X + 1) (X + X + X + X + X + X + 1)
CRC Polynomial
Burst 8 Ordering (2 tCK
)
T0
T0 + 8 U.I.
CRC Data Output
EDC bit ordering
X0 X1 X2 X3 X4 X5 X6 X7
Figure 68. EDC Calculation matrix
The CRC calculation is embedded into the WRITE and READ data stream as shown in Figure 16:
•
•
for WRITEs, the CRC checksum is calculated on the DQ and DBI# input data before decoding with DBI
for READs, the CRC checksum is calculated on the DQ and DBI# output data after encoding with DBI
The bit ordering is optimized for errors in the time burst direction. Figure 68 shows the bit orientation on a
byte lane basis. All ʹ1sʹ are assumed in the calculation for the DBI# in burst in case DBI is disabled for
WRITEs or READs in the Mode Register.
The CRC calculation is also not affected by any data mask sent along with WDM, WDMA, WSM or WSMA
commands.
The EDC latency is based on the CAS latency for READ data and the WRITE latency for WRITE data.
Table 25 shows the 2 timing parameters associated with the EDC scheme.
Mode Register 4 is used to determine the functionality of the EDC pin. Register bits A9 and A10 control the
GDDR5 SGRAM’s CRC calculation independently for READs and WRITEs. With EDC off, the calculated
CRC pattern will be replaced by the EDC hold pattern defined in Mode Register bits A0 ‐ A3. See “Mode
Registers on page 39” section for more details.
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ2H24AFR
Table 25 EDC Timing
Description
Parameter
Value
Units
EDC READ Latency
EDC WRITE Latency
t
CL + CRCRL
WL + CRCWL
t
t
EDCRL
CK
CK
t
EDCWL
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H5GQ2H24AFR
EDC Pin Special Function Overview
The EDC pin is used for many different functions. The behavior of the EDC pin in various modes is sum‐
marized in Table 26.
Table 26 EDC Pin Behavior
Device Status
Condition
RESET# = LOW
EDC0‐EDC3 Pin Status
Hi‐Z
Device Power‐up
RESET# = HIGH; no WCK clocks
RESET# = HIGH; stable WCK clocks
WCK is sampled High
High
EDC hold pattern (default = ’1111’)
EDC hold pattern (’1111’)
WCK2CK Training
Idle
WCK is sampled Low
Inverted EDC hold pattern (’0000’)
EDC hold pattern
EDC13inv MR4 A11=0
EDC0, EDC2: EDC hold pattern
EDC1, EDC3: inverted EDC hold pattern
EDC13inv MR4 A11=1
WRCRC on
WRCRC off
RDCRC on
RDCRC off
CRC data
WRITE Burst
EDC hold pattern
CRC data
READ or RDTR burst
EDC hold pattern
LDFF
WRCRC + RDCRC both on or both off EDC hold pattern
WRTR burst
‐
EDC hold pattern
EDC hold pattern
High
WCK enabled (MR5 A1=0)
Power‐Down
WCK disabled using MR5 A1=1
Self Refresh
‐
High
Fixed ’1010’ strobe pattern with 4 U.I.
preamble
Read Burst in RDQS Mode
MR3 A5=1
EDC0, EDC2: Fixed ’1010’ strobe pattern
with 4 U.I. preamble
READ burst in RDQS Mode with
MR3 A5=1; EDC13inv MR4 A11=1
RDQS pseudo‐differential
EDC1, EDC3: Fixed ’0101’ strobe pattern
with 4 U.I. preamble
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H5GQ2H24AFR
5.13. PRECHARGE
The PRECHARGE command (see Figure 69) is used to deactivate the open row in a particular bank (PRE)
or the open row in all banks (PREALL). The bank(s) will be available for a subsequent row access a speci‐
fied time (t ) after the PRECHARGE command is issued as illustrated in Figure 39.
RP
Input A8 determines whether one or all banks are to be precharged. In case where only one bank is to be
precharged, inputs BA0‐BA3 select the bank. Otherwise BA0‐BA3 are treated as “Don’t Care”.
Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE
command being issued. A PRECHARGE command will be treated as a NOP if there is no open row in that
bank, or if the previously open row is already in the process of precharging. Sequences of PRECHARGE
commands must be spaced by at least t
as shown in Figure 70.
PPD
Precharge
CK#
CK
CKE#
LOW
CS#
RAS#
CAS#
WE#
A9‐A11(A12)
A0,A1,A6,A7
PREALL
PRE
A8
A7
BA0‐BA3
A2‐A5
BA
BA = Bank Address (if A8 is LOW;
otherwise Donʹt Care)
Figure 69. PRECHARGE command
T0
T1
T2
T3
T4
CK#
CK
CMD NOP
PRE
BAx
NOP
PRE
BAy
NOP
ADDR
t
t
RP
t
RAS
PPD
Donʹt Care
BAx,y = bank address x,y
Figure 70. Precharge to Precharge Timings
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H5GQ2H24AFR
5.14. AUTO PRECHARGE
Auto Precharge is a feature which performs the same individual bank precharge function as described
above, but without requiring an explicit command. This is accomplished by using A8 (A8 = High), to
enable Auto Precharge in conjunction with a specific READ or WRITE command. A precharge of the bank
/ row that is addressed with the READ or WRITE command is automatically performed upon completion
of the read or write burst. Auto Precharge is non persistent in that it is either enabled or disabled for each
individual READ or WRITE command.
Auto Precharge ensures that a precharge is initiated at the earliest valid stage within a burst. The user
must not issue another command to the same bank until the precharge time (t ) is completed. This is
RP
determined as if an explicit PRECHARGE command was issued at the earliest possible time, as described
for each burst type in the OPERATION section of this specification.
5.15. REFRESH
The REFRESH command is used during normal operation of the GDDR5 SGRAM. The command is non
persistent, so it must be issued each time a refresh is required. A minimum time t
is required between
RFC
two REFRESH commands. The same rule applies to any access command after the refresh operation. All
banks must be precharged prior to the REFRESH command.
The refresh addressing is generated by the internal refresh controller. This makes the address bits ʺDonʹt
Careʺ during a REFRESH command. The GDDR5 SGRAM requires REFRESH cycles at an average peri‐
odic interval of t
(max). The values of t
for different densities are listed in Table 6. To allow for
REFI
REFI
improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh
interval is provided. A maximum of eight REFRESH commands can be posted to the GDDR5 SGRAM, and
the maximum absolute interval between any REFRESH command and the next REFRESH command is 9 *
t
.
REFI
During REFRESH, and when bit A2 in MR5 is set to 0, WRTR, RDTR, and LDFF commands are allowed at
time t after the REFRESH command, which enable (incremental) data training to occur in parallel
REFTR
with the internal refresh operation and thus without loss of performance on the interface. See READ Train‐
ing and WRITE Training for details.
As impedance updates from the auto‐calibration engine may occur with any REFRESH command, it is safe
to only issue NOP commands during t period to prevent false command, address or data latching
KO
resulting from impedance updates.
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Refresh
CK#
CK
CKE#
LOW
CS#
RAS#
CAS#
WE#
A9‐A11 (A12)
A0,A1,A6
A8
A7
BA0‐BA3
A2‐A5
Figure 71. REFRESH command
T0
T1
Ta0
Ta1
Tb0
Tb1
Tb2
Tb3
Tb4
Tb5
Tc0
CK#
CK
PRE
ALL
CMD
NOP
tRP
REF
NOP
tREFTR
WRTR
NOP
NOP
NOP
NOP
NOP
ACT
tRFC
BA
RA
ADDR
tKO
WL = 3
WCK
WCK#
DQ
BA = bank address; RA = row address
WRTR and RDTR commands are allowed during refresh unless disabled in the Mode Register
Donʹt Care
WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines
the needed offset between WCK and CK.
Figure 72. Refresh Timings
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5.16. SELF‐REFRESH
Self‐Refresh can be used to retain data in the GDDR5 SGRAM, even if the rest of the system is powered
down. When in the Self‐Refresh mode, the GDDR5 SGRAM retains data without external clocking. The
SELF REFRESH ENTRY command (see Figure 73) is initiated like a REFRESH command except that CKE#
is pulled HIGH. SELF REFRESH ENTRY is only allowed when all banks are precharged with t satisfied,
RP
and when the last data element or CRC data element from a preceding READ or WRITE command have
been pushed out (t
). NOP commands are required until t
is met after the entering Self‐Refresh.
RDSRE
CKSRE
The PLL is automatically disabled upon entering Self‐Refresh and is automatically enabled and reset upon
exiting Self‐Refresh. If the GDDR5 SGRAM enters Self‐Refresh with the PLL disabled, it will exit Self‐
Refresh with the PLL disabled.
Once the SELF REFRESH ENTRY command is registered, CKE# must be held HIGH to keep the device in
Self‐Refresh mode. When the device has entered the Self‐Refresh mode, all external control signals, except
CKE# and RESET# are “Don’t care”. For proper Self‐Refresh operation, all power supply and reference
pins (VDD, VDDQ, VSS, VSSQ, VREFC, VREFD) must be at valid levels. The GDDR5 SGRAM initiates a
minimum of one internal refresh within t
period once it enters Self‐Refresh mode. The address, com‐
CKE
mand, data and WCK pins are in ODT state, and the EDC pins drive a HIGH.
The clock is internally disabled during Self‐Refresh operation to save power. The minimum time that the
GDDR5 SGRAM must remain in Self‐Refresh mode is t
. The user may change the external clock fre‐
CKE
quency or halt the external CK and WCK clocks t
after Self‐Refresh entry is registered. However, the
CKSRE
clocks must be restarted and stable t
before the device can exit Self‐Refresh operation.
CKSRX
The procedure for exiting Self‐Refresh requires a sequence of events. First, the CK and WCK clocks must
be stable prior to CKE# going back LOW. A delay of at least t must be satisfied before a valid com‐
XSNRW
mand not requiring a locked PLL can be issued to the device to allow for completion of any internal
refresh in progress. Before a command requiring a locked PLL can be applied, a delay of at least t
must be satisfied.
XSRW
During Self‐Refresh the on‐die termination (ODT) and driver will not be auto‐calibrated. Therefore, it is
recommended that the ODT and driver be recalibrated by the controller upon exiting Self‐Refresh. Alter‐
natively, if changes in voltage and temperature are tracked or known to be bounded then the provided
Voltage and Temperature Variation tables may be consulted to determine if recalibration is necessary.
Upon exit from Self‐Refresh, the GDDR5 SGRAM can be put back into Self‐Refresh mode after waiting at
least t
period and issuing one extra REFRESH command.
XSNRW
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Self‐Refresh
CK#
CK
HIGH
CKE#
CS#
RAS#
CAS#
WE#
A9‐A11 (A12)
A0,A1,A6
A8
A7
BA0‐BA3
A2‐A5
Figure 73. SELF REFRESH Entry Command
T0
T1
T2
Ta0
Tb0
Tb1
Tb2
Tc0
Td0
CK#
CK
tCKSRE
tCKSRX
tCMDS
CKE#
tRDSRE or tWRSRE
tRP
tXSRW
tCPDED
NOP
tXSNRW
CMD NOP
SRE
NOP
NOP
SRX
PREA
Valid
ADDR
DQ
Donʹt Care
Enter Self Refresh Mode
Self refresh exit requires WCK2CK training prior to any WRITE or READ operation
Exit Self Refresh Mode
At least one REFRESH command shall be issued after tXSNRW for output driver and termination impedance updates.
Figure 74. Self Refresh Entry and Exit
Note:
1. Clock(CK and CK#) must be stable before exiting self refresh mode.
2. Device must be in the all banks idle state prior to entering self refresh mode.
3. tXSNRW is required before any non‐READ or WRITE command can be applied, and tXSRW is required before a READ or WRITE command can be
applied.
4. REF = REFRESH command.
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Table 27 Pin States During Self Refresh
Pin
EDC
State
High
DQ/DBI#
ADR/CMD
CKE#
ODT
ODT
ODT (Driven High by Controller)
ODT
WCK/WCK#
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5.17. POWER‐DOWN
GDDR5 SGRAMs requires CKE# to be LOW at all times an access is in progress: from the issuing of a
READ or WRITE command until completion of the burst. For READs, a burst completion is defined as
when the last data element including CRC has been transmitted on the DQ outputs, for WRITEs, a burst
completion is defined as when the last data element has been written to the memory array and CRC data
has been returned to the controller.
POWER‐DOWN is entered when CKE# is registered HIGH. If POWER‐DOWN occurs when all banks are
idle, this mode is referred to as precharge POWER‐DOWN; if POWER‐DOWN occurs when there is a row
active in any bank, this mode is referred to as active POWER‐DOWN. Entering POWER‐DOWN deacti‐
vates the input and output buffers, excluding CK, CK#, WCK, WCK#, RESET#, EDC pins and CKE#. The
input buffers for WCK and WCK# can be turned off if the LP2 bit in MR5 is on.
For maximum power savings, the user has the option of disabling the PLL prior to entering POWER‐
DOWN. In that case, on exiting POWER‐DOWN, WCK2CK training is required to set the internal synchro‐
nizers which will include the enabling of the PLL, PLL reset, and t clock cycles must occur before any
LK
READ or WRITE command can be issued.
While in power‐down, CKE# HIGH and stable CK and WCK signals must be maintained at the device
inputs. The EDC pins continuously drive the EDC hold pattern; if the controller does not require CDR,
users may program the EDC hold pattern to ’1111’ prior to entering power‐down mode. POWER‐DOWN
duration is limited by the refresh requirements of the device.
The POWER‐DOWN state is synchronously exited when CKE# is registered LOW (in conjunction with a
NOP or DESELECT command). A valid executable command may be applied t
cycles later. The min.
XPN
power‐down duration is specified by t .
PD
T4
T0
T1
T2
T3
Ta0
Ta1
Ta2
Tb0
CK#
CK
CKE#
t
CPDED
tRDSRE or tWRSRE
CMD NOP PDE
t
t
XPN
PD
NOP
NOP
NOP
PDX
Valid
WCK
WCK#
Donʹt Care
Exit Power‐Down Mode
Enter Power‐Down Mode
Figure 75. Power-Down Entry and Exit
Note:
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1. Minimum CKE# pulse width must satisfy tCKE
.
2. After issuing Power‐Down command, two more NOPs should be issued.
Table 28 Pin States During Power Down
Pin
LP2
State
WCK
‘Hold’
EDC
no WCK
High
DQ/DBI#
ADR/CMD
CKE#
x
x
x
x
ODT
ODT
ODT (Driven High by Controller)
ODT
WCK/WCK#
5.18. COMMAND TRUTH TABLES
Table 29 Truth Table – CKE#
CURRENT
STATE
CKE#n‐1 CKE#n
COMMANDn
ACTIONn
NOTES
H
H
H
H
L
H
H
L
Power‐Down
Self Refresh
X
Maintain Power‐Down
Maintain Self Refresh
Exit Power‐Down
X
Power‐Down
Self Refresh
DESELECT or NOP
DESELECT or NOP
DESELECT or NOP
DESELECT or NOP
REFRESH
L
Exit Self Refresh
5
H
H
H
All Banks Idle
Bank(s) Active
All Banks Idle
Precharge Power‐Down Entry
Active Power‐Down Entry
Self Refresh Entry
L
L
See <Link>Table 30 and
<Link>Table 31
L
L
1, 2, 3
Notes:
1. CKE#n is the logic state of CKE# at clock edge n; CKE#n‐1 was the state of CKE# at the previous clock edge.
2. Current state is the state of the GDDR5 SGRAM immediately prior to clock edge n.
3. COMMANDn is the command registered at clock edge n, and ACTIONn is a result of COMMANDn.
4. All states and sequences not shown are illegal or reserved.
5. DESELECT or NOP commands should be issued on any clock edges occurring during the tXSRW period. A minimum of tLK is
needed for the PLL to lock before applying a READ or WRITE command if the PLL was disabled.
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Table 30 Truth Table – Current State Bank n – Command To Bank n
CURRENT
STATE
CS# RAS# CAS# WE#
COMMAND/ACTION
NOTES
H
L
L
L
L
L
X
H
L
X
H
H
L
X
H
H
H
L
DESELECT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
ACTIVE (select and activate row)
REFRESH
Any
Idle
L
4
4
6
L
L
MODE REGISTER SET
H
L
H
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
(WOM, WSM or WDM)
Row Active
L
H
L
L
6
L
L
L
H
L
L
PRECHARGE (deactivate row in bank or banks)
READ (select column and start new READ burst)
5
6
H
H
Read
(Auto
WRITE (select column and start WRITE burst)
(WOM, WSM or WDM)
L
H
L
L
6, 8
Precharge
Disabled)
L
L
L
H
L
L
PRECHARGE (only after the READ burst is complete
READ (select column and start READ burst)
5
Write
(Auto
H
H
6, 7
WRITE (select column and start new WRITE burst)
(WOM, WSM or WDM)
Precharge
Disabled)
(WOM, WSM
or WDM)
L
L
H
L
L
L
L
6
H
PRECHARGE (only after the WRITE burst is complete)
5, 7
Notes
1. This table applies when CKE#n‐1 was LOW and CKE#n is LOW (see <Link>Table 29) and after tXSNR has been met (if the previous
state was self refresh).
2. This table is bank‐specific, except where noted (i.e., the current state is for a specific bank and the commands shown are those
allowed to be issued to that bank when in that state). Exceptions are covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and tRP has been met.
Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are
in progress.
Read: A READ burst has been initiated, with auto precharge disabled.
Write: A WRITE burst has been initiated, with auto precharge disabled.
4. The following states must not be interrupted by a command issued to the same bank. DESELECT or NOP commands, or allowable
commands to the other bank should be issued on any clock edge occurring during these states. Allowable commands to the other
bank are determined by its current state and <Link>Table 30, and according to <Link>Table 31.
Precharging: Starts with registration of a PRECHARGE command and ends when tRP is met. Once tRP is met, the bank will be in
the idle state.
Row Activating: Starts with registration of an ACTIVE command and ends when tRCD is met. Once tRCD is met, the bank will be
in the “row active” state.
Read w/Auto‐Precharge Enabled: Starts with registration of a READ command with auto precharge enabled and ends when tRP
has been met. Once tRP is met, the bank will be in the idle state.
Write w/Auto‐Precharge Enabled: Starts with registration of a WRITE command with auto precharge enabled and ends when tRP
has been met. Once tRP is met, the bank will be in the idle state.
5. The following states must not be interrupted by any executable command; DESELECT or NOP commands must be applied on each
positive clock edge during these states.
Refreshing: Starts with registration of a REFRESH command and ends when tRC is met. Once tRC is met, the GDDR5 SGRAM will
be in the all banks idle state.
Accessing Mode Register: Starts with registration of a MODE REGISTER SET command and ends when tMRD has been met. Once
tMRD is met, the GDDR5 SGRAM will be in the all banks idle state.
Precharging All: Starts with registration of a PRECHARGE ALL command and ends when tRP is met. Once tRP is met, all banks
will be in the idle state.
READ or WRITE: Starts with the registration of the ACTIVE command and ends the last valid data nibble.
6. All states and sequences not shown are illegal or reserved.
7. Not bank‐specific; requires that all banks are idle, and bursts are not in progress.
8. May or may not be bank‐specific; if multiple banks are to be precharged, each must be in a valid state for precharging.
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9. Reads or Writes listed in the Command/Action column include Reads or Writes with auto precharge enabled and Reads or Writes
with auto precharge disabled.
10. A WRITE command may be applied after the completion of the READ burst
Table 31 Truth Table – Current State Bank n – Command To Bank m
CURRENT
STATE
CS#
RAS# CAS#
WE#
COMMAND/ACTION
NOTES
Any
H
L
X
L
L
L
X
H
X
L
H
H
X
H
X
H
L
X
H
X
H
H
L
DESELECT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
Any Command Otherwise Allowed to Bank m
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
(WOM, WSM or WDM)
Idle
Row Activating,
Active, or
Precharging
6
6
L
L
L
L
L
L
L
H
H
H
H
L
L
H
H
L
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
(WOM, WSM or WDM)
Read
(Auto Precharge
Disabled)
6
6
L
L
L
L
L
L
L
H
H
H
H
L
L
H
H
L
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
(WOM, WSM or WDM)
Write
(Auto Precharge
Disabled)
6, 7
6
L
L
L
L
L
L
L
H
H
H
H
L
L
H
H
L
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
(WOM, WSM or WDM)
Read
(With Auto
Precharge)
6
6
L
L
L
L
L
L
L
H
H
H
H
L
L
H
H
L
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
(WOM, WSM or WDM)
Write
(With Auto
Precharge)
6
6
L
L
L
H
L
PRECHARGE
Notes
1. This table applies when CKE#n‐1 was LOW and CKE#n is LOW (see <Link>Table 30) and after tXSNR has been met (if the previous
state was self refresh).
2. WRITE in this table refers to both WOM/WOMA, WSM/WSMA and WDM/WDMA commands
3. This table describes alternate bank operation, except where noted (i.e., the current state is for bank n and the commands shown are
those allowed to be issued to bank m, assuming that bank m is in such a state that the given command is allowable). Exceptions
are covered in the notes below.
4. Current state definitions:
Idle: The bank has been precharged, and tRP has been met.
Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are
in progress.
Read: A READ burst has been initiated, with auto precharge disabled.
Write: A WRITE burst has been initiated, with auto precharge disabled.
Read with Auto Precharge Enabled: See following text
Write with Auto Precharge Enabled: See following text
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4a. The read with auto precharge enabled or write with auto precharge enabled states can each be broken into two parts: the access
period and the precharge period. For read with auto precharge, the precharge period is defined as if the same burst was
executed with auto precharge disabled and then followed with the earliest possible PRECHARGE command that still accesses
all of the data in the burst. For write with auto precharge, the precharge period begins when tWR ends, with tWR measured as if
auto precharge was disabled. The access period starts with registration of the command and ends where the precharge period
(or tRP) begins. During the precharge period of the read with auto precharge enabled or write with auto precharge enabled
states, ACTIVE, PRECHARGE, READ and WRITE commands to the other bank may be applied. In either case, all other related
limitations apply (e.g., contention between read data and write data must be avoided).
4b. The minimum delay from a READ or WRITE command with auto precharge enabled, to a command to a different bank is
summarized below.
5. REFRESH and MODE REGISTER SET commands may only be issued when all banks are idle.
6. All states and sequences not shown are illegal or reserved.
7. READs or WRITEs listed in the Command/Action column include READs or WRITEs with auto precharge enabled and READs or
WRITEs with auto precharge disabled.
Table 32 Minimum Delay Between Commands to Different Banks with Auto Precharge Enabled
From Command
To Command
Minimum delay
(with concurrent auto precharge)
[WLmrs + (BL/4)] t + tWTR ***
READ or READ with AUTO PRECHARGE
CK
WRITE
with AUTO
PRECHARGE
(WOMA)
2 * t
WRITE or WRITE with AUTO PRECHARGE
(WOM/WOMA, WSM/WSMA or WDM/WDMA)
CK
1* t
PRECHARGE
CK
1* t
ACTIVE
CK
[WL + (BL/4)] t + tWTR ***
READ or READ with AUTO PRECHARGE
mrs
CK
WRITE
with AUTO
PRECHARGE
(WDMA)
2 * t
WRITE or WRITE with AUTO PRECHARGE
(WOM/WOMA, WSM/WSMA or WDM/WDMA)
CK
2* t
PRECHARGE
CK
CK
ACTIVE
2* t
[WL
3 * t
+ (BL/4)] t + t
***
READ or READ with AUTO PRECHARGE
mrs
CK
WTR
WRITE
with AUTO
PRECHARGE
(WSMA)
3 * t
WRITE or WRITE with AUTO PRECHARGE
(WOM/WOMA, WSM/WSMA or WDM/WDMA)
CK (JEDEC : MAX[tccd,
CK ]
3* t
PRECHARGE
CK
3* t
ACTIVE
CK
2 * t
READ or READ with AUTO PRECHARGE
CK
[CLmrs + (BL/4) + 2 (JEDEC:
) ‐
tccd
WRITE or WRITE with AUTO PRECHARGE
READ
with AUTO
PRECHARGE
WLmrs] * t ***
(WOM/WOMA, WSM/WSMA or WDM/ WDMA)
CK
PRECHARGE
ACTIVE
1* t
1* t
CK
CK
*** CLmrs = CAS latency (CL)
BL = Burst length
WLmrs = WRITE latency
tWTR = tWTRL if Bank Groups enabled and access to the same bank group, otherwise tWTR=tWTRS
tCCD = tCCDL if Bank Groups enabled and access to the same bank group, otherwise tCCD=tCCDS
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5.19. RDQS MODE
For device operation at lower clock frequencies the GDDR5 SGRAM may be set into RDQS mode in which
a READ DATA STROBE (RDQS) in the style of GDDR4 will be sent on the EDC pins along with the READ
data. The controller will use the RDQS to latch the READ data.
RDQS mode is entered by setting the RDQS Mode bit A5 in Mode Register 3 (MR3). When the bit is set, the
GDDR5 SGRAM will asynchronously terminate any EDC hold pattern and drive a logic HIGH after t
at the latest. All features controlled by MR4 are ignored by RDQS mode.
MRD
READ commands are executed as in normal mode regarding command to data out delay and pro‐
grammed READ latencies. A fixed clock‐like pattern as shown in Figure 76 is driven on EDC pins in phase
(edge aligned) with the DQ. Prior to the first valid data element, this fixed clock‐like pattern or READ pre‐
amble is driven for 2 t
.
WCK
No CRC is calculated in RDQS mode, neither for READs nor for WRITEs. The CRC engine is effectively
disabled, and the corresponding WRCRC and RDCRC Mode Register bits are ignored. The PLL may be on
or off with RDQS mode, depending on system considerations and the PLL’s minimum clock frequency.
There is no equivalent WDQS mode; WRITE commands to the GDDR5 SGRAM are not affected by RDQS
mode.
RDQS mode is exited by resetting the RDQS Mode bit. In this case the GDDR5 SGRAM will asynchro‐
nously start driving the EDC hold pattern after t
.
MRD
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The WCK2CK training should be performed prior to entering RDQS mode. No WCK2CK training can be
done when the RDQS mode is active.
T0
T1
Ta0
Ta1
Tb0
Tb1
Tb2
Tb3
Tb4
Tb5
Tc0
CK#
CK
CMD MRS
NOP
READ
NOP
NOP
NOP
NOP
NOP
MRS
NOP
NOP
ADDR
MRA MRA
tMRD
BA CA
MRA MRA
tMRD
CLmrs
WCK
WCK#
DQ
EDC
Hold
EDC
EDC
Hold
Donʹt Care
Enter RDQS Mode
Exit RDQS Mode
1. MRA = Mode Register address and opcode; BA = bank address; CA = column address
2. WCK and CK are shown aligned (t =0, t =0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK.
WCK2CKPIN
WCK2CK
3. Before the READ command, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and t
must be met.
RCDRD
4.
t
= 0 is shown for illustration purposes.
WCK2DQO
Figure 76. RDQS Mode Timings
EDC1 and EDC3 can be treated as pseudo‐differential to EDC0 and EDC2 respectively, by setting the
EDC13Inv field, bit A11 in MR4, as shown in Table 34.
Table 33 EDC pin behavior in RDQS mode including pseudo‐differential RDQS
NOP
POWER‐
(except
MRS Set
READ/RDTR
DOWN/SELF
REFRESH
RD/RDTR/
PDN/SRF)
WCK2CK
Training
EDC02
Output
EDC13
Output
EDC0123
Output
EDC0123
Output
RDQS Mode
EDC13 Invert
Off
On
RDQS
RDQS
1111
1111
High
High
On
Off
Inverted
RDQS
RDQS
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5.20. CLOCK FREQUENCY CHANGE SEQUENCE
Step 1) Wait until all commands have finished, all banks are idle.
Step 2) Send NOP or DESELECT (must meet setup/hold relative to clock while clock is changing) to
GDDR5 SGRAM for the entire sequence unless stated to do otherwise. The user must take care of refresh
requirements.
Step 3) If the new desired clock frequency is below the min frequency supported by PLL‐on mode, turn the
PLL off via an MRS command.
Step 4) Change the clock frequency and wait until clock is stabilized.
Step 5) If the new clock frequency is within the PLL on range and the PLL on state is desired, enable the
PLL via an MRS Command if it is not already enabled.
Step 6) Perform address training if required.
Step 7) Perform WCK2CK training. As defined in the WCK2CK training process, if the PLL is enabled,
then complete steps 7a and 7b:
7a) Reset the PLL by writing to the MRS register.
7b) Wait t clock cycles before issuing any commands to the GDDR5 SGRAM.
LK
Step 8) Exit WCK2CK training.
Step 9) Perform READ and WRITE training, if required.
Step 10) GDDR5 SGRAM is ready for normal operation after any necessary interface training.
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responsability for use of circuits described. No patent licenses are implied.
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5.21. DYNAMIC VOLTAGE SWITCHING (DVS)
GDDR5 SGRAM’s allow the supply voltage to be changed during the course of normal operation using the
GDDR5 Dynamic Voltage Switching (DVS) feature. By using DVS the GDDR5 SGRAM’s power consump‐
tion can be reduced whenever only a fraction of the maximum available bandwidth is required by the cur‐
rent work load.
DVS requires the GDDR5 SGRAM to be properly placed into self refresh before the voltage is changed
from the exising stable voltage, V
to the new desired voltage V
. The DVS procedure may also
original
new
require changes to the VDD Range mode register using MR7 bits A8 and A9, depending on whether the
feature is supported. The datasheet shall be consulted regarding the supported supply voltages for DVS,
and any dependencies of AC timing parameters on the selected supply voltage.
Clock frequency changes can also take place before or after entering self refresh mode using the standard
Clock Frequency Change procedure. A clock frequency change in conjunction with DVS is required if t
CK
is less than t min supported by V
. In this case normal device operation including self refresh exit is
CK
new
not guaranteed without a frequency change. Changing the frequency while in self refresh is the most safe
procedure.
Once self refresh is entered, t
must be met before the supply voltage is allowed to transition from
CKSRE
V
to V
. After VDD and VDDQ are stable at V
, t must be met to allow for internal voltages
original
new
new VS
in the GDDR5 SGRAM to stabilize before self refresh mode may be exited. During the voltage transition
the voltage must not go below V of the lower voltage of either V or V in order to prevent false
min
original
new
chip reset. V
is the minimum voltage allowed by VDD or VDDQ in the DC operating conditions table.
min
VREF shall continue to track VDDQ.
DVS Procedure
Step 1) Complete all operations and precharge all banks.
Step 2) Issue an MRS command to set VDD Range to proper values for V
Range mode register field is supported by the GDDR5 SGRAM.
. This step is only required when the VDD
new
Step 3) Enter self refresh mode. Self refresh entry procedure must be met.
Step 4) Wait required time t before changing voltage to V
.
new
CKSRE
Step 5) Change VDD and VDDQ to V
.
new
Step 6) Wait required time t for voltage stabilization.
VS
Step 7) Exit self refresh. The self refresh exit procedure must be met.
Step 8) Issue MRS commands to adjust mode register settings as desired (e.g. latencies, PLL on/off, CRC on/off, RDQS
mode on/off).
Step 9) Perform any interface training as required.
Step 10) Continue normal operation.
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T0
T1
T2
Ta0
Tb0
Tb1
Tb2
Tc0
Td0
Voriginal
VDD,
Vnew
VDDQ
VSS, VSSQ
tVS
Voltage ramp
CK#
CK
tCKSRE
tCKSRX
CKE#
tXSRW
PREA
tRDSRE or tWRSRE
tRP
CMD NOP
tCPDED
NOP
tXSNRW
SRE
NOP
NOP
SRX
Valid
Donʹt Care
Exit Self‐ Refresh Mode
Self refresh exit requires WCK2CK training prior to any WRITE or READ operation
Enter Self‐Refresh Mode
At least one REFRESH command shall be issued after tXSNRW for output driver and termination impedance updates
Voriginal > Vnew shown as an example of a voltage change
Note) PREA (Precharge All) command shall be issued after SRX (Self Refresh).
Figure 77. DVS Sequence
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5.22. TEMPERATURE SENSOR
GDDR5 SGRAMs incorporate a with digital temperature readout function. This function allows the con‐
troller to monitor the GDDR5 SGRAM die’s junction temperature and use this information to make sure
the device is operated within the specified temperature range or to adjust interface timings relative to tem‐
perature changes over time.
The is enabled by bit A6 in Mode Register 7 (MR7). In this case the temperature readout is valid after
t
. Hynix applies 10us to t
.
TSEN
TSEN
The temperature readout uses the DRAM Info mode feature. The digital value is driven asynchronously
on the DQ bus following the MRS command to Mode Register 3 (MR3) that sets bit A7 to 1 and bit A6 to 0.
The temperature readout will be continuously driven until an MRS command sets both bits to 0.
The GDDR5 SGRAM’s junction temperature is linearly encoded as shown in Table 34. Hynix has the read‐
out to a subset of four digital codes out of Table 34, corresponding to six temperature thresholds.
Table 34 Readout Pattern
Binary Temperature Readout
Temperature [°C]
MF=0: DQ[3:0]
MF=1: DQ[27:24]
＜ 45
65
0001
0011
0111
1111
85
> 105
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5.23. DUTY CYCLE CORRECTOR (DCC)
As GDDR5 SGRAMs can operate with the PLL/DLL off during normal operation, the use of a Duty Cycle
Corrector (DCC) can correct for the duty cycle error of the WCK clocks, resulting in improved timing mar‐
gins for Reads and Writes. The DCC can be enabled at any time; however it is recommended to enable the
DCC prior to WCK2CK training because any shift of rising and falling WCK edges can impact the
WCK2CK training results.
DCC operation is controlled by MR7 bits A11 and A10. Initially a “DCC reset” command will reset the
internal correcting code. After tMRD a “DCC start” command may be given which starts the actual duty
cycle correction. The DCC must be held in this state for a minimum duration of tDCC. After tDCC is met, a
DCC hold can be set to terminate the duty cycle correction and hold the DCC code or the DCC can be left
on to dynamically correct the duty cycle. Disabling the DCC requires a series of two MRS command: at
first, a “DCC reset” resets the internal correcting code, then a “DCC off” will fully disable the DCC. The
DCC may also be fully disabled in the “DCC reset” state, depending on design implementation.
Table 35 DCC Timings
Parameter
Symbol
Min
Max
Unit
Required time for duty cycle corrector
t
1300
‐
tCK
DCC
DCC can correct the duty cycle error within the range of ±100ps.
WCK#
WCK
CK#
CK
A.C.
NOP
MRS
MRS
MRS
NOP
MRS
NOP
NOP
MRS
CMD
t
t
WCK2MRS
t
MRD
t
MRD
LK
t
t
WCK2TR
DCC
Start WCK2CK Phase
Training
Enter WCK2CK
Enter WCK2CK
Training (reset WCK
divide by circuits)
PLL Reset
Training (sets data
synchronizers, resets
FIFO pointers)
DCC reset
DCC start
DCC hold or not
Figure 78. Timing Diagram of DCC Control Signals
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H5GQ2H24AFR
DCC control signals
•
•
•
DCC reset : Initializes the DCC code and shall be issued when WCK is stable
DCC start :Enables the DCC to update the DCC code
DCC hold/off : Stops the DCC from undating and holds the DCC code
DCC sequence
•
•
•
•
•
Step 1) Enable DCC reset(MRS7 A11:1. A10:0) before entering WCK2CK training
Step 2) Enalble DCC start(MRS7 A11:0, A10:1) after WCK&WCKB are stabilized during tWCK2TR
Step 3) Wait tDCC(>1300cycles) for DCC operation
Step 4) Enale DCC hold(MRS7 A11:0, A10:0) before starting WCK2CK Phase Training
Step 5) If continual DCC update is required, enable DCC start (MRS7 A11:0, A10:1) after EXIT WCK Training
Table 36 DCC Control Signals
A11
A10
DCC
no DCC & DCC off or hold
DCC start
0
0
1
1
0
1
0
1
DCC reset
RFU
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H5GQ2H24AFR
6. OPERATING CONDITIONS
6.1. ABSOLUTE MAXIMUM RATINGS
Voltage on Vdd Supply
Relative to Vss................................................... ‐0.5V to +2.0V
Voltage on VddQ Supply
Relative to Vss .................................................. ‐0.5V to +2.0V
Voltage on Vref and Inputs
Relative to Vss .................................................. ‐0.5V to +2.0V
Voltage on I/O Pins
Relative to Vss .................................................. ‐0.5V to VddQ +0.5V
Storage Temperature (plastic) ............................ ‐55°C to +150°C
Short Circuit Output Current ............................. 50mA
*Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and functional operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Table 37 Capacitance
PARAMETER
SYMBOL
MIN
MAX
UNITS
NOTES
Delta Input/Output Capacitance: DQs, DBI#, EDC,
WCK, WCK#
DCio
‐
0.6
pF
Delta Input Capacitance: Command and Address
Delta Input Capacitance: CK, CK#
DCi1
DCi2
‐
‐
0.6
0.3
pF
pF
Input/Output Capacitance: DQs, DBI#, EDC, WCK,
WCK#
Cio
‐
2.1
pF
Input Capacitance: Command and Address
Input Capacitance: CK, CK#, WCK, WCK#
Input Capacitance: CKE#
Ci1
Ci2
Ci3
‐
‐
‐
1.8
1.8
1.8
pF
pF
pF
Table 38 Thermal Characteristics
Parameter
Theta_JA
Theta_JB
Theta_JC
Description
Value
32.5
15.6
5.3
Units
C/W
C/W
C/W
Notes
o
o
o
Thermal resistance junction to ambient
Thermal resistance junction to board
Thermal resistance junction to case
1,2,3,4
1,2,5
1,5
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H5GQ2H24AFR
Notes:
1. Measurement procedures for each parameter must follow standard procedures defined in the current JEDEC JESD‐51 standard.
2. Theta_JA and Theta_JB must be measured with the high effective thermal conductivity test board defined in JESD51‐7.
3. Airflow information must be documented for Theta_JA.
4. Theta_JA should only be used for comparing the thermal performance of single package and not for system related junction
temperature prediction.
5. Theta_JB and Theta_JC are derived through a package thermal simulation.
6. Values are guaranteed by design but not tested in production.
Notes : DRAM Component Operating Temperature Range
Symbol
Parameter
Rating
Units
Notes
o
T
0 to 85
C
1,2
Normal Operating Temperature Range
OPER
Notes:
1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For measurement condi‐
tions, please refer to the JEDEC document JESD51‐2.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation,
the DRAM case temperature must be maintained between 0 ‐ 85oC under all operating conditions.
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6.2. AC & DC CHARACTERISTICS
All GDDR5 SGRAMs are designed for 1.5V typical voltage supplies. The interface of GDDR5 with
1.5V VDDQ will follow the POD15 specification. All AC and DC values are measured at the ball.
GDDR5 can optionally support 1.35V typical voltage supplies. For high speed operation the
POD135 spec should be met. Under certain circumstances it may be acceptable for a device during 1.35V
VDD/VDDQ operation to follow the POD15 specification since GDDR5 supports a wide range of speeds
and low frequency settings. Vendor datasheets should be consulted for details regarding 1.35V support.
Table 39 DC Operating Conditions
POD15
Typ
1.5
POD135
Typ
Parameter
Device Supply Voltage
Output Supply Voltage
Symbol
VDD
Min
1.455
1.455
Max
1.545
1.545
Min
1.3095
1.3095
Max
1.3905
1.3905
Unit Note
1.35
V
V
1
1
VDDQ
1.5
1.35
Reference Voltage for DQ and
DBI# pins
0.69 *
0.71 *
0.69 *
0.71 *
VREFD
VREFD2
V
V
V
V
V
V
V
V
V
V
V
V
V
2,3
2,3,4
5
VDDQ
VDDQ
VDDQ
VDDQ
Reference Voltage for DQ and
DBI# pins
0.49 *
0.51 *
0.49 *
0.51 *
VDDQ
VDDQ
VDDQ
VDDQ
External Reference Voltage for
address and command
0.69 *
0.71 *
0.69 *
0.71 *
VREFC
VDDQ
VDDQ
VDDQ
VDDQ
DC Input Logic HIGH Voltage for
address and command
VREFC +
0.15
VREFC +
0.135
VIHA (DC)
VILA (DC)
VIHD (DC)
VILD (DC)
DC Input Logic LOW Voltage for
address and command
VREFC ‐
VREFC ‐
0.15
0.135
DC Input Logic HIGH Voltage for
DQ and DBI# pins with VREFD
VREFD +
0.10
VREFD +
0.09
DC Input Logic LOW Voltage for
DQ and DBI# pins with VREFD
VREFD ‐
VREFD ‐
0.10
0.09
DC Input Logic HIGH Voltage for
DQ and DBI# pins with VREFD2
VIHD2
(DC)
VREFD2 +
0.30
VREFD2+
0.27
DC Input Logic LOW Voltage for
DQ and DBI# pins with VREFD2
VILD2
(DC)
VREFD2 ‐
VREFD2 ‐
0.30
0.27
Input Logic HIGH Voltage for
RESET#, SEN, MF
VDDQ ‐
VDDQ ‐
VIHR
VILR
VIHX
VILX
0.50
0.50
Input Logic LOW Voltage for
RESET#, SEN, MF
0.30
0.30
Input logic HIGH voltage for
EDC1/2 (x16 mode detect)
VDDQ ‐
VDDQ ‐ 0.3
8
8
0.3
Input logic LOW voltage for
EDC1/2 (x16 mode detect)
0.30
10
0.30
10
Input Leakage Current
Any Input 0V <= VIN <= VDDQ
(All other pins not under test = 0V)
Il
μA
Output Leakage Current
(DQs are disabled; 0V <= Vout <=
VDDQ)
Ioz
10
10
μA
Output Logic LOW Voltage
VOL (DC)
0.62
0.56
V
Notes:
1. GDDR5 SGRAMs are designed to tolerate PCB designs with separate VDD and VDDQ power regulators.
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H5GQ2H24AFR
2. AC noise in the system is estimated at 50mV pk‐pk for the purpose of DRAM design.
3. Source of Reference Voltage and control of Reference Voltage for DQ and DBI# pins is determined by VREFD, Half VREFD, Auto
VREFD, VREFD MERGE and VREFD Offsets mode registers.
4. VREFD Offsets are not supported with VREFD2.
5. External VREFC is to be provided by the controller as there is no other alternative supply.
6. DQ/DBI# input slew rate must be greater than or equal to 3V/ns for POD15 and 2.7V/ns for POD135 . The slew rate is measured
between VREFD crossing and VIHD(AC) or VILD(AC) or VREFD2 crossing and VIHD2(AC) or VILD2(AC).
7. ADR/CMD input slew rate must be greater than or equal to 3V/ns. The slew rate is measured between VREFC crossing and
VIHA(AC) or VILA(AC).
8. VIHX and VILX define the voltage levels for the receiver that detects x32 or x16 mode with RESET# going High.
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Table 40 AC Operating Conditions
POD15
Parameter
Symbol
Min
Typ
Max
Unit Note
AC Input Logic HIGH Voltage for
address and command
VIHA (AC)
VREFC + 0.20
V
AC Input Logic LOW Voltage for
address and command
VILA (AC)
VIHD (AC)
VILD (AC)
VIHD2 (AC)
VILD2 (AC)
VREFC ‐ 0.20
V
V
V
V
V
AC Input Logic HIGH Voltage for
DQ and DBI# pins with VREFD
VREFD + 0.15
VREFD2 + 0.40
AC Input Logic LOW Voltage for
DQ and DBI# pins with VREFD
VREFD ‐ 0.15
VREFD2 ‐ 0.40
AC Input Logic HIGH Voltage for
DQ and DBI# pins with VREFD2
AC Input Logic LOW Voltage for
DQ and DBI# pins with VREFD2
VDDQ
VOH
System Noise Margin (Power/Ground,
Crosstalk, Signal Integrity Attenuation)
VIH (AC)
VIH (DC)
VREF + AC Noise
VREF + DC Noise
VREF ‐ DC Noise
VREF ‐ AC Noise
VIL (DC)
VIL (AC)
VIN (AC) ‐ Provides margin
between VOL (MAX) and
VIL (AC)
VOL (MAX)
Note: VREF, VIH, VIL refer to
whichever VREFxx (VREFD,
VREFD2, or VREFC) is being used.
Input
Output
Figure 79. Voltage Waveform
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Table 41. Clock Input Operating Conditions
POD15
POD135
Parameter
Symbol
Min
Max
Min
Max
Unit Note
Clock Input Mid‐Point Voltage; CK and
VREFC
VREFC
+ 0.10
VREFC
VREFC
+ 0.10
VMP (DC)
V
V
V
V
1, 6
4, 6
CK#
‐ 0.10
‐ 0.10
Clock Input Differential Voltage; CK
and CK#
VIDCK (DC)
VIDCK (AC)
VIDWCK (DC)
VIDWCK (AC)
VIN
0.22
0.40
0.20
0.30
‐0.30
0.198
0.36
0.18
0.27
‐0.30
Clock Input Differential Voltage; CK
and CK#
2, 4, 6
5, 7
Clock Input Differential Voltage; WCK
and WCK#
Clock Input Differential Voltage; WCK
and WCK#
2, 5, 7
Clock Input Voltage Level; CK, CK#,
WCK and WCK# single ended
VDDQ
+ 0.30
VDDQ
+ 0.30
CK/CK# Single ended slew rate
CKslew
3
3
2.7
2.7
V/ns
V/ns
9
WCK/WCK# Single ended slew rate
WCKslew
10
Clock Input Crossing Point Voltage; CK
and CK#
VREFC
VREFC
+ 0.12
VREFC
VREFC
+ 0.108
VIXCK (AC)
VIXWCK (AC)
tDVAC
V
V
2, 3, 6
‐ 0.12
‐ 0.108
Clock Input Crossing Point Voltage;
WCK and WCK#
VREFD
VREFD
+ 0.10
VREFD
VREFD
+ 0.09
2, 3, 7,
8
‐ 0.10
‐ 0.09
Allowed time before ringback of CK/
WCK below VIDCK/WCK(AC)
11, 12,
13
ps
Notes:
1. This provides a minimum of 0.9V to a maximum of 1.2V, and is nominally 70% of VDDQ with POD15. If POD135, this
provides a minimum of 0.845V to a maximum of 1.045V, and is nominally 70% of VDDQ. DRAM timings relative to CK cannot be
guaranteed if these limits are exceeded.
2. For AC operations, all DC clock requirements must be satisfied as well.
3. The value of VIXCK and VIXWCK is expected to equal 70% VDDQ for the transmitting device and must track variations in the DC
level of the same.
4. VIDCK is the magnitude of the difference between the input level in CK and the input level on CK#. The input reference level for
signals other than CK and CK# is VREFC.
5. VIDWCK is the magnitude of the difference between the input level in WCK and the input level on WCK#. The input reference level
for signals other than WCK and WCK# is either VREFD, VREFD2 or the internal VREFD.
6. The CK and CK# input reference level (for timing referenced to CK and CK#) is the point at which CK and CK# cross. Please refer
to the applicable timings in the AC timings table (Table 44).
7. The WCK and WCK# input reference level (for timing referenced to WCK and WCK#) is the point at which WCK and WCK# cross.
Please refer to the applicable timings in the AC Timings table (Table 44).
8. VREFD is either VREFD, VREFD2 or the internal VREFD.
9. The slew rate is measured between VREFC crossing and VIXCK(AC).
10. The slew rate is measured between VREFD crossing and VIXWCK(AC).
11. Figure illustrates the exact relationship between (CK‐CK#) or (WCK‐WCK#) and VID(AC), VID(DC) and tDVAC
12. Ringback below VID(DC) is not allowed.
13. tDVAC is not measured in and of itself as a compliance specification, but is relied upon in measurement of clock operating
conditions and clock related parameters.
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H5GQ2H24AFR
Maximum Clock Level
CK
VID (DC)
VID (AC)
VMP (DC)
VIX(AC)
CK#
Minimum Clock Level
Figure 79. Clock Waveform
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H5GQ2H24AFR
tDVAC
VID (AC) MIN
VID (DC) MIN
0
half cycle
‐(VID (DC) MIN
)
‐(VID (AC) MIN
)
tDVAC
time
Figure 80. Definition of differential ac-swing and “time above ac-level” tDVAC
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Table 42. IDD Specification and Test Condition
PARAMETER/CONDITION
SYMBOL
NOTES
One Bank Activate Precharge Current: tCK = tCK(min); tWCK = tWCK(min); tRC = tRC(min); CKE# =
LOW; DQ, DBI# are HIGH; random bank and row addresses (4 address inputs set LOW) with ACT
command
IDD0
1
One Bank Activate Read Precharge Current: tCK = tCK (min); tWCK = tWCK(min);
tRC = tRC(min); CKE# = LOW; one bank activated; single read burst with 50% data toggle on each data
transfer, with 4 outputs per data byte driven LOW; otherwise DQ, DBI# are HIGH; random bank, row
and column addresses (4 address inputs set LOW) with ACT and READ commands; IOUT = 0mA
IDD1
1
Precharge Power‐down Current: tCK = tCK (min); tWCK = tWCK(min); all banks idle;
IDD2P
IDD2N
IDD3P
IDD3N
CKE# = HIGH; all other inputs are HIGH; PLLs are off
Precharge Standby Current: tCK = tCK (min); tWCK = tWCK(min); all banks idle;
CKE# = LOW; all other inputs are HIGH
Active Power‐down Current: tCK = tCK (min); tWCK = tWCK(min); one bank active;
CKE# = HIGH; all other inputs are HIGH
Active Standby Current: tCK = tCK (min); tWCK = tWCK(min); one bank active;
CKE# = LOW; all other inputs are HIGH
Read Burst Current: tCK = tCK (min); tWCK = tWCK(min); CKE# = LOW; one bank in each of the 4 bank
groups activated; continuous read burst across bank groups with 50% data toggle on each data
transfer, with 4 outputs per data byte driven LOW; random bank and column addresses (4 address
inputs set LOW) with READ command; IOUT = 0mA
IDD4R
Write Burst Current: tCK = tCK (min); tWCK = tWCK(min); CKE# = LOW; one bank in each of the 4 bank
groups activated; continuous write burst across bank groups with 50% data toggle on each data
transfer, with 4 inputs per data byte set LOW; random bank and column addresses (4 address inputs
set LOW) with WRITE command; no data mask
IDD4W
Refresh Current: tCK = tCK (min); tWCK = tWCK(min); tRFC = tRFC(min); CKE# = LOW;
IDD5
IDD6
1
DQ, DBI# are HIGH; address inputs are HIGH
Self Refresh Current: CKE# = HIGH; all other inputs are HIGH
Four Bank Interleave Read Current: tCK = tCK(min); tWCK = tWCK(min); CKE# = LOW;
one bank in each of the 4 bank groups activated and precharged at tRC(min); continuous read burst
across bank groups with 50% data toggle on each data transfer, with 4 outputs per data byte driven
LOW; random bank, row and column addresses (4 address inputs set LOW) with ACT and READ/
READA commands; IOUT = 0mA
IDD7
NOTE: Min t or t
for IDD measurements is the smallest multiple of t
that meets the minimum of the absolute value for the
CK
RC
RFC
respective parameter.
Common Test conditions:
1)
2)
3)
4)
5)
6)
Device is configured to x32 mode
ABI and DBI are enabled
All ODTs are enabled with ZQ/2
PLLs are enabled unless otherwise noted
CRC is enabled for READs and WRITEs, and the EDC hold pattern is programmed to’1010’
Bank groups are enabled if required for device operation at tCK(min)
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
133
H5GQ2H24AFR
Table 43‐1. IDD SPECIFICATIONS AND CONDITIONS (1.5V)
1.×32 Mode IDD
Symbol
IDD0
4.0Gbps
400
420
140
150
170
400
800
960
410
50
5.0Gbps
440
6.0Gbps
480
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD1
460
500
IDD2P
IDD2N
IDD3P
IDD3N
IDD4W
IDD4R
IDD5
150
160
160
180
180
190
440
480
950
1100
1300
500
1120
450
IDD6
50
50
IDD7
700
800
900
2.×16 Mode IDD
Symbol
IDD0
4.0Gbps
280
300
110
130
140
260
500
550
270
50
5.0Gbps
300
320
120
140
150
290
580
660
300
50
6.0Gbps
320
340
130
150
160
320
660
780
330
50
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD1
IDD2P
IDD2N
IDD3P
IDD3N
IDD4W
IDD4R
IDD5
IDD6
IDD7
490
570
650
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
134
H5GQ2H24AFR
Table 43‐2. IDD SPECIFICATIONS AND CONDITIONS (1.35V)
1.×32 Mode IDD
Symbol
IDD0
4.0Gbps
340
360
130
140
150
350
700
830
360
40
5.0Gbps
380
400
140
150
160
390
800
950
400
40
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD1
IDD2P
IDD2N
IDD3P
IDD3N
IDD4W
IDD4R
IDD5
IDD6
IDD7
600
680
2.×16 Mode IDD
Symbol
IDD0
4.0Gbps
250
260
100
110
120
220
440
500
240
40
5.0Gbps
270
280
110
120
130
240
500
560
250
40
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD1
IDD2P
IDD2N
IDD3P
IDD3N
IDD4W
IDD4R
IDD5
IDD6
IDD7
450
530
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
135
H5GQ2H24AFR
Table 44. AC Timings (@1.5V)
6.0Gbps
PARAMETER a, b
SYMBOL
UNIT
NOTES
MIN
MAX
CK and WCK Timings
PLL on
0.667
0.667
0.470
0.470
0.470
-
2
CK Clock cycle time
tCK
ns
PLL off
20
CK Clock high-level width
CK Clock low-level width
Min CK Clock half period
tCH
tCL
0.530
0.530
-
tCK
tCK
tCK
MHz
C
C
tHP
Max CK Clock frequency with bank groups disabled
fCKBG
1500
d
d
Max CK Clock frequency with bank groups enabled and
tCCDL=3tCK
fCKBG4
-
1500
MHz
Max CK Clock frequency with WCK2CK alignment at pins
Max CK Clock frequency in RDQS Mode
fCKPIN
fCKRDQS
fCKVREFD2
-
-
-
500
500
MHz
MHz
MHz
e
f
Max CK Clock frequency for device operation with VREFD2
TBD
g
Max CK Clock frequency for WCK-to-CK
auto synchronization in WCK2CK training mode
fCKAUTOSYNC
fCKLF
-
-
500
500
MHz
MHz
h
i
Max CK Clock frequency for device operation with Low
Frequency Mode enabled
PLL on
0.333
0.333
0.470
0.470
0.470
1
10
WCK Clock cycle time
PLL off
tWCK
ns
j
WCK Clock high-level width
WCK Clock low-level width
Min WCK Clock half period
tWCKH
tWCKL
0.530
0.530
-
tWCK
tWCK
tWCK
k,l
k,l
tWCKHP
Command and Address Input Timings
Command input setup time
Command input hold time
Command input pulse width
Address input setup time
Address input hold time
Address input pulse width
tCMDS
tCMDH
tCMDPW
tAS
0.25
0.25
0.6
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
m,n
m,n
m,n,o
m,n,p
m,n,p
m,n,o,p
0.1
tAH
0.1
tAPW
0.3
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
136
H5GQ2H24AFR
Table 44. AC Timings (@1.5V)
6.0Gbps
PARAMETER a, b
SYMBOL
UNIT
NOTES
MIN
MAX
WCK2CK Timings
WCK stop to MRS delay for entering WCK2CK training
tWCK2MRS
3
10
-
ns
ns
MRS to WCK restart delay after entering WCK2CK training
WCK start to WCK phase movement delay
tMRSTWCK
tWCK2TR
tWCK2PH
tWCKHTR
tWCKLTR
-
-
q
10
tCK
ns
WCK phase change to phase detector out delay
5
-
WCK Clock high-level width during WCK2CK training
WCK Clock low-level width during WCK2CK training
0.43
0.43
0.57
0.57
tWCK
tWCK
k,l,r
k,l,r
PLL on;MR6A0=0
(at phase detector)
-0.2
-0.2
-0.2
-0.2
-0.25
-0.25
-0.4
-0.4
0.2
0.2
PLL on;MR6A0=1
(at pins)
WCK2CK offset when zero offset at
phase detector or at pins
tWCK2CKPIN
ns
s
PLL off;MR6A0=0
(at phase detector)
0.2
PLL off;MR6A0=1
(at pins)
0.2
MR6A0=0
(at phase detector)
0.25
0.25
0.4
tCK
ns
WCK2CK phase offset upon
WCK2CK training exit
tWCK2CKSYNC
tWCK2CK
t
MR6A0=1
(at pins)
MR6A0=0
(at phase detector)
WCK2CK phase offset
MR6A0=1
tCK
ns
u
0.4
(at pins)
PLL Input and Output Timings
PLL on
0.7
0.7
1.7
1.7
2.2
2.2
-
WCK to DQ/DBI# offset for input
data
tWCK2DQI
ns
v
PLL off
PLL on
PLL off
1.1
WCK to DQ/DBI#/EDC/ offset for
output data
tWCK2DQO
tDIPW
ns
ns
w,x
1.1
DQ/DBI# input pulse width
0.15
y,z,aa
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
137
H5GQ2H24AFR
Table 44. AC Timings (@1.5V)
6.0Gbps
PARAMETER a, b
SYMBOL
UNIT
NOTES
MIN
MAX
PLL on
PLL off
0.1
0.1
-
-
DQ/DBI# data input valid window
tDIVW
ns
y,z,ab
DQ/DBI# input skew within double byte
tDQDQI
tDQDQO
-0.1
0.1
0.125
ns
ns
ac
ad
DQ/DBI#/EDC output skew within double byte
-0.125
Row Access Timings
tRC
Active to Active command period
Active to PRECHARGE command period
Active to READ command delay
Active to WRITE command delay
Active to RDTR command delay
Active to WRTR command delay
Active to LDFF command delay
40
28
14
10
10
10
10
10
-
ns
ns
ns
ns
ns
ns
ns
ns
tRAS
9*tREFI
ae
tRCDRD
-
-
-
-
-
-
tRCDWR
tRCDRTR
tRCDWTR
tRCDLTR
REFRESH to RDTR or WRTR command delay
tREFTR
Active bank A to Active bank B command delay same bank
group
tRRDL
tRRDS
5.5
5.5
-
-
ns
ns
af
Active bank A to Active bank B command delay different bank
groups
ag
Four bank activate window
tFAW
23
-
-
ns
ns
ah
ai
Thirty two bank activate window
t32AW
184
READ to PRECHARGE command delay same bank with bank
groups enabled
tRTPL
tRTPS
2
2
-
-
tCK
tCK
aj
READ to PRECHARGE command delay same bank with bank
groups disabled
ak
PRECHARGE to PRECHARGE command delay
PRECHARGE command period
tPPD
tRP
1
-
-
-
-
ns
ns
ns
ns
12
12
24
WRITE recovery time
tWR
tDAL
Auto precharge write recovery + precharge time
al
Column Access Timings
RD/WR bank A to RD/WR bank B command delay same bank
group
tCCDL
tCCDS
3
2
-
-
tCK
tCK
af,am
ag,an
RD/WR bank A to RD/WR bank B command delay different
bank groups
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
138
H5GQ2H24AFR
Table 44. AC Timings (@1.5V)
6.0Gbps
PARAMETER a, b
SYMBOL
UNIT
NOTES
MIN
MAX
LDFF to LDFF command cycle time
LDFF(111) to LDFF command cycle time
LDFF(111) to RDTR command cycle delay
READ or RDTR to LDFF command delay
WRITE to LDFF command delay
tLTLTR
tLTL7TR
tLTRTR
tRDTLT
tWRTLT
4
-
-
-
-
-
tCK
tCK
tCK
tCK
tCK
4
ao
4
4
WL+5
WL+BL/4+1
-tWLmin
WRTR to RDTR command delay
tWTRTR
-
tCK
tCK
ay
WRITE to WRTR command delay
tWRWTR
tWTRL
WL+tCRCWL+2
1*tCK + 5ns
-
-
Internal WRITE to READ command delay same bank group
af
Internal WRITE to READ command delay different bank
groups
tWTRS
1*tCK + 5ns
-
ag
[CLmrs+(BL/4)+2
- WLmrs]*tCK
READ or RDTR to WRITE or WRTR command delay
Write Latency
tRTW
tWL
-
tCK
tCK
ap
aq
4
7
Power-Down and Refresh Timings
CKE# min high and low pulse width
tCKE
16
16
16
-
-
-
tCK
tCK
tCK
Valid CK Clock required after self refresh entry
Valid CK Clock required before self refresh exit
tCKSRE
tCKSRX
READ to SELF REFRESH ENTRY or POWER DOWN
ENTRY command delay
tRDSRE
tWRSRE
CL+2tCK
-
-
tCK
tCK
ar
as
WL+ BL/4 + 1tck +
Max(tDAL,
CRCWL+2tck)
WRITE to SELF REFRESH ENTRY or POWER DOWN
ENTRY command delay
REFRESH command period
tRFC
65
-
-
ns
ns
Exit self refresh to non-READ/WRITE command delay
tXSNRW
tRFC
tRFC+
tRCD
Exit self refresh to READ/WRITE command delay
Refresh period
tXSRW
tREF
-
tCK
ms
at
-
-
32
3.9
1.9
8k rows
Average periodic refresh interval
16k rows
tREFI
tPD
us
au
-
Min Power down entry to exit time
16
tCK
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
139
H5GQ2H24AFR
Table 44. AC Timings (@1.5V)
6.0Gbps
PARAMETER a, b
SYMBOL
UNIT
NOTES
MIN
4
MAX
NOP/DESELECT commands required upon power-down and
self refresh entry
tCPDED
tXPN
-
-
tCK
tCK
Power down exit time
17
Miscellaneous Timings
MODE REGISTER SET command period
PLL enabled to PLL lock delay
tMRD
tLK
4
-
-
ns
tCK
us
5000
TBD
1300
TBD
-
PLL standby time
tSTDBTY
tDCC
-
ax
-
tCK
us
Required time for duty cycle corrector (DCC)
DVS voltage stabilization time
tVS
-
REFRESH to calibration update complete delay
Active termination setup time
tKO
40
-
ns
tATS
10
ns
Active termination hold time
tATH
10
-
ns
0.5*tCK+
10
READ to data out delay in address training mode
Address training exit to DQ in ODT state delay
tADR
tADZ
0.5*tCK+0
-
tCK
ns
q
0.5*tCK+
10
Vendor ID on
Venodr ID off
enable delay
tWRIDON
tWRIDOFF
tTSEN
-
-
11
11
-
ns
ns
us
10
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
140
H5GQ2H24AFR
Table 44. AC Timings (@1.5V)
5.0Gbps
SYMBOL
4.0Gbps
PARAMETER a, b
UNIT NOTES
MIN
MAX
MIN
MAX
CK and WCK Timings
PLL on
PLL off
0.8
2
1
1
2
CK Clock cycle time
tCK
ns
0.8
20
20
CK Clock high-level width
CK Clock low-level width
Min CK Clock half period
tCH
tCL
0.470
0.470
0.470
-
0.530
0.530
-
0.470
0.470
0.470
-
0.530
0.530
-
tCK
tCK
tCK
MHz
C
C
tHP
Max CK Clock frequency with bank groups disabled
fCKBG
1250
1000
d
d
Max CK Clock frequency with bank groups enabled
and tCCDL=3tCK
fCKBG4
-
1250
-
1000
MHz
Max CK Clock frequency with WCK2CK alignment
at pins
fCKPIN
fCKRDQS
fCKVREFD2
-
-
-
500
500
-
-
-
500
500
MHz
MHz
MHz
e
f
Max CK Clock frequency in RDQS Mode
Max CK Clock frequency for device operation with
VREFD2
TBD
TBD
g
Max CK Clock frequency for WCK-to-CK
auto synchronization in WCK2CK training mode
fCKAUTOSYNC
fCKLF
-
-
500
500
-
-
500
500
MHz
MHz
h
i
Max CK Clock frequency for device operation with
Low Frequency Mode enabled
PLL on
0.4
1
10
0.5
1
10
WCK Clock cycle time
PLL off
tWCK
ns
j
0.4
0.5
WCK Clock high-level width
WCK Clock low-level width
Min WCK Clock half period
tWCKH
tWCKL
0.470
0.470
0.470
0.530
0.530
-
0.470
0.470
0.470
0.530
0.530
-
tWCK
tWCK
tWCK
k,l
k,l
tWCKHP
Command and Address Input Timings
Command input setup time
Command input hold time
Command input pulse width
Address input setup time
Address input hold time
Address input pulse width
tCMDS
tCMDH
tCMDPW
tAS
0.25
0.25
0.7
-
-
-
-
-
-
0.25
0.25
0.8
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
m,n
m,n
m,n,o
m,n,p
m,n,p
m,n,o,p
0.1
0.125
0.125
0.45
tAH
0.1
tAPW
0.35
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
141
H5GQ2H24AFR
Table 44. AC Timings (@1.5V)
5.0Gbps
SYMBOL
4.0Gbps
PARAMETER a, b
UNIT NOTES
MIN
MAX
MIN
MAX
WCK2CK Timings
WCK stop to MRS delay for entering WCK2CK
training
tWCK2MRS
tMRSTWCK
3
-
-
3
-
-
ns
MRS to WCK restart delay after entering WCK2CK
training
10
10
ns
q
WCK start to WCK phase movement delay
WCK phase change to phase detector out delay
tWCK2TR
tWCK2PH
10
5
-
-
10
5
-
-
tCK
ns
WCK Clock high-level width during WCK2CK
training
tWCKHTR
tWCKLTR
0.43
0.43
-0.2
-0.2
-0.2
-0.2
-0.25
-0.25
-0.4
-0.4
0.57
0.57
0.2
0.43
0.43
-0.2
-0.2
-0.2
-0.2
-0.25
-0.25
-0.4
-0.4
0.57
0.57
0.2
tWCK
tWCK
k,l,r
k,l,r
WCK Clock low-level width during WCK2CK
training
PLL on;MR6A0=0
(at phase detector)
PLL on;MR6A0=1
0.2
0.2
WCK2CK offset when zero
offset at phase detector or at
pins
(at pins)
tWCK2CKPIN
ns
s
PLL off;MR6A0=0
(at phase detector)
0.2
0.2
PLL off;MR6A0=1
(at pins)
0.2
0.2
MR6A0=0
0.25
0.25
0.4
0.25
0.25
0.4
tCK
ns
(at phase detector)
WCK2CK phase offset upon
WCK2CK training exit
tWCK2CKSYNC
tWCK2CK
t
MR6A0=1
(at pins)
MR6A0=0
(at phase detector)
tCK
ns
WCK2CK phase offset
u
MR6A0=1
(at pins)
0.4
0.4
PLL Input and Output Timings
PLL on
PLL off
PLL on
PLL off
0.7
0.7
1.7
0.7
0.7
1.7
1.7
2.2
2.2
-
WCK to DQ/DBI# offset for
input data
tWCK2DQI
ns
v
1.7
2.2
2.2
-
1.1
1.1
WCK to DQ/DBI#/EDC/
offset for output data
tWCK2DQO
tDIPW
ns
ns
w,x
1.1
1.1
DQ/DBI# input pulse width
0.18
0.225
y,z,aa
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
142
H5GQ2H24AFR
Table 44. AC Timings (@1.5V)
5.0Gbps
SYMBOL
4.0Gbps
PARAMETER a, b
UNIT NOTES
MIN
MAX
MIN
MAX
PLL on
PLL off
0.12
-
-
0.15
0.15
-
-
DQ/DBI# data input valid
window
tDIVW
ns
y,z,ab
0.12
DQ/DBI# input skew within double byte
tDQDQI
-0.1
0.1
0.125
-0.1
0.1
0.125
ns
ns
ac
ad
DQ/DBI#/EDC output skew within double byte
tDQDQO
-0.125
-0.125
Row Access Timings
Active to Active command period
Active to PRECHARGE command period
Active to READ command delay
Active to WRITE command delay
Active to RDTR command delay
Active to WRTR command delay
Active to LDFF command delay
tRC
40
28
14
10
10
10
10
10
-
40
28
14
10
10
10
10
10
-
ns
ns
ns
ns
ns
ns
ns
ns
tRAS
9*tREFI
9*tREFI
ae
tRCDRD
tRCDWR
tRCDRTR
tRCDWTR
tRCDLTR
tREFTR
-
-
-
-
-
-
-
-
-
-
-
-
REFRESH to RDTR or WRTR command delay
Active bank A to Active bank B command delay same
bank group
tRRDL
tRRDS
5.5
5.5
-
-
5.5
5.5
-
-
ns
ns
af
Active bank A to Active bank B command delay
different bank groups
ag
Four bank activate window
tFAW
23
-
-
23
-
-
ns
ns
ah
ai
Thirty two bank activate window
t32AW
184
184
READ to PRECHARGE command delay same bank
with bank groups enabled
tRTPL
tRTPS
2
2
-
-
2
2
-
-
tCK
tCK
aj
READ to PRECHARGE command delay same bank
with bank groups disabled
ak
PRECHARGE to PRECHARGE command delay
PRECHARGE command period
tPPD
tRP
1
-
-
-
-
1
-
-
-
-
ns
ns
ns
ns
12
12
24
12
12
24
WRITE recovery time
tWR
tDAL
Auto precharge write recovery + precharge time
al
Column Access Timings
RD/WR bank A to RD/WR bank B command delay
same bank group
tCCDL
tCCDS
3
2
-
-
3
2
-
-
tCK
tCK
af,am
ag,an
RD/WR bank A to RD/WR bank B command delay
different bank groups
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
143
H5GQ2H24AFR
Table 44. AC Timings (@1.5V)
5.0Gbps
SYMBOL
4.0Gbps
MIN
PARAMETER a, b
UNIT NOTES
MIN
MAX
MAX
LDFF to LDFF command cycle time
LDFF(111) to LDFF command cycle time
LDFF(111) to RDTR command cycle delay
READ or RDTR to LDFF command delay
WRITE to LDFF command delay
tLTLTR
tLTL7TR
tLTRTR
tRDTLT
tWRTLT
4
-
-
-
-
-
4
-
-
-
-
-
tCK
4
4
tCK
tCK
tCK
tCK
ao
4
4
4
4
WL+5
WL+5
WL+
WL+
WRTR to RDTR command delay
WRITE to WRTR command delay
tWTRTR
BL/4+1
-tWLmin
-
BL/4+1
-tWLmin
-
tCK
ay
WL+tCRCWL+
2
tWRWTR
tWTRL
tWTRS
WL+tCRCWL+2
1*tCK + 5ns
-
-
-
-
-
-
tCK
ns
Internal WRITE to READ command delay same bank
group
1*tCK + 5ns
1*tCK + 5ns
af
Internal WRITE to READ command delay different
bank groups
1*tCK + 5ns
ns
ag
READ or RDTR to WRITE or WRTR command
delay
[CLmrs+(BL/4)+2-
WLmrs]*tCK
[CLmrs+(BL/4)+2-
WLmrs]*tCK
tRTW
tWL
-
-
tCK
ap
Write Latency
3
7
3
7
tCK
aq
Power-Down and Refresh Timings
CKE# min high and low pulse width
tCKE
12
12
12
-
-
-
10
10
10
-
-
-
tCK
tCK
tCK
Valid CK Clock required after self refresh entry
Valid CK Clock required before self refresh exit
tCKSRE
tCKSRX
READ to SELF REFRESH ENTRY or POWER
DOWN ENTRY command delay
tRDSRE
tWRSRE
CL+2tCK
-
-
CL+2tCK
-
-
tCK
tCK
ar
as
WL+ BL/4 + 1tck +
Max(tDAL,
CRCWL+2tck)
WL+ BL/4 + 1tck
+ Max(tDAL,
CRCWL+2tck)
WRITE to SELF REFRESH ENTRY or POWER
DOWN ENTRY command delay
REFRESH command period
tRFC
65
-
-
65
-
-
ns
ns
Exit self refresh to non-READ/WRITE command
delay
tXSNRW
tRFC
tRFC
tRFC+
tRCD
tRFC+
tRCD
Exit self refresh to READ/WRITE command delay
Refresh period
tXSRW
tREF
-
-
tCK
ms
at
-
-
32
3.9
1.9
-
-
32
3.9
1.9
8k rows
Average periodic refresh
tREFI
tPD
us
au
interval
16k rows
-
-
Min Power down entry to exit time
12
10
tCK
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
144
H5GQ2H24AFR
Table 44. AC Timings (@1.5V)
5.0Gbps
SYMBOL
4.0Gbps
PARAMETER a, b
UNIT NOTES
MIN
MAX
MIN
MAX
NOP/DESELECT commands required upon power-
down and self refresh entry
tCPDED
tXPN
3
-
-
2
-
-
tCK
tCK
Power down exit time
13
10
Miscellaneous Timings
MODE REGISTER SET command period
PLL enabled to PLL lock delay
tMRD
tLK
4
-
-
4
-
-
ns
5000
TBD
1300
TBD
-
5000
TBD
1300
TBD
-
tCK
PLL standby time
tSTDBTY
tDCC
-
-
us
tCK
us
ax
-
-
Required time for duty cycle corrector (DCC)
DVS voltage stabilization time
tVS
-
-
REFRESH to calibration update complete delay
Active termination setup time
tKO
40
-
40
-
ns
tATS
10
10
ns
Active termination hold time
tATH
10
-
10
-
ns
0.5*tCK+ 0.5*tCK+ 0.5*tCK+ 0.5*tCK+
READ to data out delay in address training mode
Address training exit to DQ in ODT state delay
tADR
tADZ
tCK
ns
q
0
10
0
10
0.5*tCK+
10
0.5*tCK+
10
-
-
Vendor ID on
Venodr ID off
enable delay
tWRIDON
tWRIDOFF
tTSEN
-
-
11
11
-
-
-
11
11
-
ns
ns
us
10
10
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
145
H5GQ2H24AFR
Table 44. AC Timings (@1.35V)
5.0Gbps
SYMBOL
4.0Gbps
PARAMETER a, b
UNIT NOTES
MIN
MAX
MIN
MAX
CK and WCK Timings
PLL on
PLL off
0.8
2
1.0
1.0
2
CK Clock cycle time
tCK
ns
0.8
20
20
CK Clock high-level width
CK Clock low-level width
Min CK Clock half period
tCH
tCL
0.470
0.470
0.470
-
0.530
0.530
-
0.470
0.470
0.470
-
0.530
0.530
-
tCK
tCK
tCK
MHz
C
C
tHP
Max CK Clock frequency with bank groups disabled
fCKBG
1250
1000
d
d
Max CK Clock frequency with bank groups enabled
and tCCDL=3tCK
fCKBG4
-
1250
-
1000
MHz
Max CK Clock frequency with WCK2CK alignment
at pins
fCKPIN
fCKRDQS
fCKVREFD2
-
-
-
500
500
-
-
-
500
500
MHz
MHz
MHz
e
f
Max CK Clock frequency in RDQS Mode
Max CK Clock frequency for device operation with
VREFD2
TBD
TBD
g
Max CK Clock frequency for WCK-to-CK
auto synchronization in WCK2CK training mode
fCKAUTOSYNC
fCKLF
-
-
500
500
-
-
500
500
MHz
MHz
h
i
Max CK Clock frequency for device operation with
Low Frequency Mode enabled
PLL on
0.4
1
10
0.5
1
10
WCK Clock cycle time
PLL off
tWCK
ns
j
0.4
0.5
WCK Clock high-level width
WCK Clock low-level width
Min WCK Clock half period
tWCKH
tWCKL
0.470
0.470
0.470
0.530
0.530
-
0.470
0.470
0.470
0.530
0.530
-
tWCK
tWCK
tWCK
k,l
k,l
tWCKHP
Command and Address Input Timings
Command input setup time
Command input hold time
Command input pulse width
Address input setup time
Address input hold time
Address input pulse width
tCMDS
tCMDH
tCMDPW
tAS
0.3
0.3
-
-
-
-
-
-
0.3
0.3
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
m,n
m,n
0.7
0.8
m,n,o
m,n,p
m,n,p
m,n,o,p
0.15
0.15
0.4
0.15
0.15
0.45
tAH
tAPW
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
146
H5GQ2H24AFR
Table 44. AC Timings (@1.35V)
5.0Gbps
SYMBOL
4.0Gbps
PARAMETER a, b
UNIT NOTES
MIN
MAX
MIN
MAX
WCK2CK Timings
WCK stop to MRS delay for entering WCK2CK
training
tWCK2MRS
tMRSTWCK
3
-
-
3
-
-
ns
MRS to WCK restart delay after entering WCK2CK
training
10
10
ns
q
WCK start to WCK phase movement delay
WCK phase change to phase detector out delay
tWCK2TR
tWCK2PH
10
5
-
-
10
5
-
-
tCK
ns
WCK Clock high-level width during WCK2CK
training
tWCKHTR
tWCKLTR
0.43
0.43
-0.2
-0.2
-0.2
-0.2
-0.25
-0.25
-0.4
-0.4
0.57
0.57
0.2
0.43
0.43
-0.2
-0.2
-0.2
-0.2
-0.25
-0.25
-0.4
-0.4
0.57
0.57
0.2
tWCK
tWCK
k,l,r
k,l,r
WCK Clock low-level width during WCK2CK
training
PLL on;MR6A0=0
(at phase detector)
PLL on;MR6A0=1
0.2
0.2
WCK2CK offset when zero
offset at phase detector or at
pins
(at pins)
tWCK2CKPIN
ns
s
PLL off;MR6A0=0
(at phase detector)
0.2
0.2
PLL off;MR6A0=1
(at pins)
0.2
0.2
MR6A0=0
0.25
0.25
0.4
0.25
0.25
0.4
tCK
ns
(at phase detector)
WCK2CK phase offset upon
WCK2CK training exit
tWCK2CKSYNC
tWCK2CK
t
MR6A0=1
(at pins)
MR6A0=0
(at phase detector)
tCK
ns
WCK2CK phase offset
u
MR6A0=1
(at pins)
0.4
0.4
PLL Input and Output Timings
PLL on
PLL off
PLL on
PLL off
0.7
0.7
1.1
1.1
0.2
1.7
0.7
0.7
1.7
1.7
2.2
2.2
-
WCK to DQ/DBI# offset for
input data
tWCK2DQI
ns
v
1.7
2.2
2.2
-
1.1
WCK to DQ/DBI#/EDC/
offset for output data
tWCK2DQO
tDIPW
ns
ns
w,x
1.1
DQ/DBI# input pulse width
0.235
y,z,aa
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
147
H5GQ2H24AFR
Table 44. AC Timings (@1.35V)
5.0Gbps
SYMBOL
4.0Gbps
PARAMETER a, b
UNIT NOTES
MIN
MAX
MIN
MAX
PLL on
PLL off
0.15
-
-
0.17
0.17
-
-
DQ/DBI# data input valid
window
tDIVW
ns
y,z,ab
0.15
DQ/DBI# input skew within double byte
tDQDQI
-0.1
0.1
0.125
-0.1
0.1
0.125
ns
ns
ac
ad
DQ/DBI#/EDC output skew within double byte
tDQDQO
-0.125
-0.125
Row Access Timings
Active to Active command period
Active to PRECHARGE command period
Active to READ command delay
Active to WRITE command delay
Active to RDTR command delay
Active to WRTR command delay
Active to LDFF command delay
tRC
48
32
18
14
16
14
14
14
-
48
32
18
14
16
14
14
14
-
ns
ns
ns
ns
ns
ns
ns
ns
tRAS
9*tREFI
9*tREFI
ae
tRCDRD
tRCDWR
tRCDRTR
tRCDWTR
tRCDLTR
tREFTR
-
-
-
-
-
-
-
-
-
-
-
-
REFRESH to RDTR or WRTR command delay
Active bank A to Active bank B command delay same
bank group
tRRDL
tRRDS
7
7
-
-
7
7
-
-
ns
ns
af
Active bank A to Active bank B command delay
different bank groups
ag
Four bank activate window
tFAW
30
-
-
30
-
-
ns
ns
ah
ai
Thirty two bank activate window
t32AW
245
245
READ to PRECHARGE command delay same bank
with bank groups enabled
tRTPL
tRTPS
2
2
-
-
2
2
-
-
tCK
tCK
aj
READ to PRECHARGE command delay same bank
with bank groups disabled
ak
PRECHARGE to PRECHARGE command delay
PRECHARGE command period
tPPD
tRP
1
-
-
-
-
1
-
-
-
-
ns
ns
ns
ns
16
16
32
16
16
32
WRITE recovery time
tWR
tDAL
Auto precharge write recovery + precharge time
al
Column Access Timings
RD/WR bank A to RD/WR bank B command delay
same bank group
tCCDL
tCCDS
3
2
-
-
3
2
-
-
tCK
tCK
af,am
ag,an
RD/WR bank A to RD/WR bank B command delay
different bank groups
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
148
H5GQ2H24AFR
Table 44. AC Timings (@1.35V)
5.0Gbps
SYMBOL
4.0Gbps
MIN
PARAMETER a, b
UNIT NOTES
MIN
MAX
MAX
LDFF to LDFF command cycle time
LDFF(111) to LDFF command cycle time
LDFF(111) to RDTR command cycle delay
READ or RDTR to LDFF command delay
WRITE to LDFF command delay
tLTLTR
tLTL7TR
tLTRTR
tRDTLT
tWRTLT
4
-
-
-
-
-
4
-
-
-
-
-
tCK
4
4
tCK
tCK
tCK
tCK
ao
4
4
4
4
WL+5
WL+5
WL+
WL+
WRTR to RDTR command delay
tWTRTR
BL/4+1
-tWLmin
-
BL/4+1
-tWLmin
-
tCK
tCK
ay
WRITE to WRTR command delay
tWRWTR
tWTRL
WL+tCRCWL+2
1*tCK + 5ns
-
-
WL+tCRCWL+2
1*tCK + 5ns
-
-
Internal WRITE to READ command delay same bank
group
af
Internal WRITE to READ command delay different
bank groups
tWTRS
1*tCK + 5ns
-
1*tCK + 5ns
-
ag
READ or RDTR to WRITE or WRTR command
delay
[CLmrs+(BL/4)+2-
WLmrs]*tCK
[CLmrs+(BL/4)+2-
WLmrs]*tCK
-
-
tRTW
tWL
tCK
tCK
ap
aq
Write Latency
3
7
3
7
Power-Down and Refresh Timings
CKE# min high and low pulse width
tCKE
13
13
13
-
-
-
10
10
10
-
-
-
tCK
tCK
tCK
Valid CK Clock required after self refresh entry
Valid CK Clock required before self refresh exit
tCKSRE
tCKSRX
READ to SELF REFRESH ENTRY or POWER
DOWN ENTRY command delay
tRDSRE
tWRSRE
CL+2tCK
-
-
CL+2tCK
-
-
tCK
tCK
ar
as
WL+ BL/4 + 1tck +
Max(tDAL,
CRCWL+2tck)
WL+ BL/4 + 1tck +
Max(tDAL,
CRCWL+2tck)
WRITE to SELF REFRESH ENTRY or POWER
DOWN ENTRY command delay
REFRESH command period
tRFC
120
-
-
120
-
-
ns
ns
Exit self refresh to non-READ/WRITE command
delay
tXSNRW
tRFC
tRFC
tRFC+
tRCD
tRFC+
tRCD
Exit self refresh to READ/WRITE command delay
Refresh period
tXSRW
tREF
-
-
tCK
ms
at
-
-
32
3.9
1.9
-
-
32
3.9
1.9
8k rows
Average periodic refresh
tREFI
tPD
us
au
interval
16k rows
-
-
Min Power down entry to exit time
12
11
tCK
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
149
H5GQ2H24AFR
Table 44. AC Timings (@1.35V)
5.0Gbps
SYMBOL
4.0Gbps
PARAMETER a, b
UNIT NOTES
MIN
MAX
MIN
MAX
NOP/DESELECT commands required upon power-
down and self refresh entry
tCPDED
tXPN
2
-
-
2
-
-
tCK
tCK
Power down exit time
13
10
Miscellaneous Timings
MODE REGISTER SET command period
PLL enabled to PLL lock delay
tMRD
tLK
10
5000
TBD
1300
TBD
-
-
-
10
5000
TBD
1300
TBD
-
-
-
ns
tCK
PLL standby time
tSTDBTY
tDCC
-
-
us
tCK
us
ax
Required time for duty cycle corrector (DCC)
DVS voltage stabilization time
-
-
tVS
-
-
REFRESH to calibration update complete delay
Active termination setup time
tKO
40
-
40
-
ns
tATS
10
10
ns
Active termination hold time
tATH
10
-
10
-
ns
0.5*tCK+ 0.5*tCK+ 0.5*tCK+ 0.5*tCK+
READ to data out delay in address training mode
Address training exit to DQ in ODT state delay
tADR
tADZ
tCK
ns
q
0
10
0
10
0.5*tCK+
10
0.5*tCK+
10
-
-
Vendor ID on
Venodr ID off
enable delay
tWRIDON
tWRIDOFF
tTSEN
-
-
11
11
-
-
-
11
11
-
ns
ns
us
10
10
a. All parameters assume proper device initialization.
b. Tests for AC timing may be considered at norminal supply voltage levels, but the related specification and device operation are guaranteed for the full
voltage and temperature range specified.
c. CK and CK# single-ended input slew rate must be greater than or equal to 3V/ns. The slew rate is measured between VREFC crossing and VIXCK(AC)
d. Parameter fCKBG4 is required for those devices supporting both 3*tCK and 4*tCK setting for bank groups. Devices supporting only 3*tCK or 4*tCK
need only to specify fCKBG.
e. Parameter fCKPIN applies when the alignment point in MR6, bit A0 is set to “at pins”, the phase difference between the WCK and CK clocks at the
DRAM pins is within tWCK2CKSYNC or tWCK2CK for pin mode and no phase search in WCK2CK training is performed.
f. Parameter fCKRDQS applies when RDQS mode is enabled in AR3, bit A5.
g. Parameter fCKBREFD2 applies when the data input reference voltage in MR7, bit A7 (Half VREFD) is set to VREFD2.
h. Parameter fCKAUTOSYNC applies when WCK2CK Auto Synchronization is enabled in MR7, bit A4.
i. Parameter fCKLF applies when Low Frequency Mode is enabled in MR7, bit A3.
j. By definition the norminal WCK clock cycle time always is 1/2 of the CK clock cycle time (not including jitter).
k. WCK and WCK# single-ended input slew rate must be greater than or equal to 3V/ns. The slew rate is measured between VREFD crossing and
VIXWCK(AC).
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
150
H5GQ2H24AFR
l. The phase relationship between WCK/WCK# and CK/CK# clocks must meet the tWCK2CK specification.
m. Command and address input timings are referenced to VREFC.
n. Command and address input slew rate must be greater than or equal to 3V/ns. The slew rate is measured between VREFC crossing and VIHA(AC)
or VILA(AC).
o. Command and address input pulse widths are design targets. The value will be characterized but not tested on each device.
p. Address input timings are only valid with ABI beging enabled and a maximum of 4 address input driven LOW.
q. Parameter may be specified as a combination of tCK and ns.
r. Parameters tWCKHTR and tWCKLTR specify the max. allowed WCK clock-to-clock phase shift during WCK2CK training. For READ and WRITE
bursts use tWCKH and tWCKL.
s. Parameter tWCK2CKPIN defines the WCK2CK phase offset range at the CK and WCK pins for ideal (phase=0 °) clock alignment at the
GDDR5 SGRAM’s phase detector (when the alignment point in MR6, bit A0 is set to “at phase detector”), or at the WCK and CK pins (when the
alignment in MR6, bit A0 is set to “at pins”). The minimum and maximum values could be negative or positive numbers, depending on the selected
WCK2CK alignment point, PLL-on or PLL-off mode and design implementation.
t. Parameter tWCK2CKSYNC defines the max. phase offset from the ideal (phase = 0 °) clock alignment at the GDDR5 SGRAM’s phase
detector (when the alignment point in MR6, bit A0 is set to “at the phase detector”), or at the WCK and CK pins (when the alignment point
in MR6, bit A0 is set to “at pins”), where the internal logic synchronizes the CK and WCK clocks; it is expected to be a fraction of tWCK2CK.
u. Parameter tWCK2CK defines the max. phase offset from the ideal (phase = 0 °) clock alignment at the GDDR5 SGRAM’s phase detector
(when the alignment point in MR6, bit A0 is set to “at phase detector”) or at the WCK and CK pins (when the alignment point in MR6, bit A0 is set to
“at pins”), for stable device operation.
v. Parameter tWCK2DQI defines the WCK to DQ/DBI# time delay range for WRITEs for PLL-on and PLL-off mode. The minimum and maximum values
could be negative or positive numbers, depending on design implementation and PLL-on or PLL-off mode. They also vary across PVT.
Data training is required to determine the actual tWCK2DQI value for reliable WRITE operation.
w. Parameter tWCK2DQO defines the WCK to DQ/DBI# time delay range for READs for PLL-on and PLL-off mode. The minimum and maxium values
could be negative or positive numbers, depending on design implementation and PLL-on or PLL-off mode. They also vary across PVT.
Data training is required to determind the actual tWCK2DQO value for reliable READ operation.
x. Outputs measured with equivalent load terminated with 60 Ohms to VDDQ
y. DQ/DBI# input timings are valid only with DBI being enabled and a maximum of 4 data inputs per byte driven LOW.
z. Data input slew rate must be greater than or equal to 3V/ns. The slew rate is measured between VREFD crossing and VIHD(AC) or VILD(AC).
aa. The data input pulse width, tDIPW, defines the minimum positive or negative input pulse width for any worst-case channel required for proper
propagation of an external signal to the receiver. tDIPW is measured at the pins. tDIPW is independent of the PLL mode.
In general tDIPW is larger than tDIVW
ab. The data input valid width, tDIVW, defines the time region where input data must be valid for reliable data capture at the receiver for any one worst
case channel. It accounts for jitter between data and clock at the latching point introduced in the path between DARM pads and the latching point.
Any additional jitter introduced into the source signals (e.g. within the system before the DRAM pad) must be accounted for in the final timing
budget together with the chosen PLL mode and bandwidth. tDIVW is measured at the pins. tDIVW is defined for PLL off and on mode separately.
In the case of PLL on, tDIVW must be specified for each supported bandwidth. In general, tDIVW is smaller than tDIPW.
ac. tDQDQI defines the maximum skew among all DQ/DBI# inputs of a double byte (when configured to ×32 mode) or a single byte (when
configured to ×16 mode) under worst case conditions. Parameter tWCK2DQI defines the mean value of the earliest and latest DQ/DBI# pin,
tDQDQI(min) the negative offset to tWCK2DQI for the earliest DQ/DBI# pin and tDQDQI(max) the positive offset to tWCK2DQI for the latest
DQ/DBI# pin.
ad. tDQDQO defines the maximum skew among all DQ/DBI# outputs of a double byte (when configured to ×32mode) or a single byte (when
configured to ×16 mode) under worst case conditions. Parameter tWCK2DQO defines the mean value of of the earliest and latest DQ/DBI#
/EDC pin, tDQDQO(min) the negative offset to tWCK2DQO for earliest DQ/DBI#/EDC pin and tDQDQO(max) the positive offset to tWCK2DQO
for the latest DQ/DBI#/EDC pin.
ae. For READs and WRITEs with AUTO PRECHARGE enabled the device will hold off the internal PRECHARGE until tRAS(min) has been satisfied.
af. Parameter applies when bank groups are enabled and consecutive commands access the same bank group.
ag. Parameter applies when bank groups are disabled or consecutive commands access different bank group.
ah. Not more than 4 ACTIVE commands are allowed within period.
ai. Not more than 32 ACTIVE commands are allowed within t32AW period. The parameter need not to be specified in case t32AW(min) would not be
greater than 8*tFAW(min).
aj. Parameter applies when bank groups are enabled and READ and PRECHARGE commands access the same bank.
ak. Parameter applies when bank groups are disabled or READ and PRECHARGE commands access the same bank.
al. tDAL = (tWR/tCK) + ( tRP/tCK). For each of the terms, if not already an integer, round up to the next integer.
am. tCCDL is either for gapless consecutive READ or gapless consecutive WRITE commands
an. tCCDS is either for gapless consecutive READ or RDTR (any combination), gapless consecutive WRITE, or gapless consecutive WRTR commands.
ao. The min. value does not exceed 8 tCK
ap. tRTW is not a device limit but determined by the system bus turnaround time. The difference between tWCK2DQO and tWCK2DQI shall be considered
in the calculation of the bus turnaround time.
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H5GQ2H24AFR
aq. The WRITE latency WLmrs cna be set to 3 to 7 clocks. When the WRITE latency is set to small values (3 ~ 4 clocks), the input buffers are always on,
reducing the latency but adding power. When the WRITE latency is set to larger values (5 ~ 7 clocks), the input buffers are turned on with the WRITE
command, thus saving power.
ar. Read data including CRC data must have been clocked out before entering self refresh or power down mode.
as. Write data must have been written to the memory core and CRC data must have been clocked out before entering self refresh or power down mode.
at. Time for WCK2CK training and data training not included.
au. A maximum of 8 consecutive REFRESH commands can be posted to a GDDR5 SGRAM device, meaning that the maximum absolute interval
between any REFRESH command and the next REFRESH command is 9*tREFI.
av. Replaces parameter tLK when PLL Fast Lock has been neabled prior to the PLL enable or reset.
aw. Replaces parameter tLK when PLL Standby has been enabed and the WCK clock frequency has not charged while in standby mode.
ax. The PLL standby time tSTDBY ismeasured from self refresh entry until after self refresh exit a subsequent PLL reset is given (with PLL Standby
enabled)
ay. t
is Internal WRTR to External RDTR command delay.
In case, External WRTR to External RDTR command delay time is “WL+(WL+BL/4+1‐tWLmin)”.
WTRTR
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6.3 CLOCK-TO-DATA TIMING SENSITIVITY
The availability of clock‐to‐data (WCK2DQ) timing sensitivity information provides the controller the
opportunity to anticipate the impact to timings from variations in environmental conditions (such as
changes in voltage or temperature) allowing the controller to take corrective action if necessary (e.g.
realigning WCK and DQ).
Variations in relative timing between WCK and data are reported for READ and WRITE paths. This speci‐
fication calls out one zone each for VDDQ, VDD, and Tcase temperature over a specified range. Vendors
may choose to provide information for additional zones covering, in total, a wider range or a finer granu‐
larity or both.
However, within a given zone if an approximated value (i.e. the specified slope) deviates from the charac‐
terized slope to such a degree that the approximated WCK‐to‐DQ time delay would be in error by more
than 5% of one UI relative to the characterized delay then the splitting of this zone into more than one zone
is required.
All zones and their associated specified slopes must form a continuous piece‐wise‐linear curve such that,
after calibration during normal operation, traversing the approximated curve (i.e. the set of specified
slopes) does not lead to time delay errors in excess of the 5% of one UI.
Tables 45, 46, and 47 below describe the minimum set of defined zones.
Table 45. VDDQ Voltage Zone
VDDQ High
VDDQ Low
Notes
a
Zone_VQ1
VDDQmin
VDDQmax
a. VDDQ(max) is the maximum specified operating voltage. VDDQ(min) is the minimum specified operating
voltage.
Table 46. VDD Voltage Zone
VDD High
VDD Low
Notes
a
Zone_VD1
VDDmax
VDDmin
a. VDD(max) is the maximum specified operating voltage. VDD(min) is the minimum specified operating
voltage.
Table 47. Tcase Temperature Zone
Tcase High
Tcase Low
Notes
a
Zone_T1
Tcasemax
10°C
a. Tcase(max) is the maximum specified operating temperature.
As noted, variations in relative timing are reported for READ and WRITE paths. Tables 48,49 and 50 below
provide information for READ timings while Tables 51,52 and 53 provide information for WRITE timings
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ2H24AFR
Table 48. WCK-to-Data READ Timing Sensitivity to VDDQ
Parameter
Symbol
Values
TBD
Units Notes
PLL on
PLL off
WCK2DQO Sensitivity to variations in VDDQ for
zone_VQ1
a b
t
ps/V
,
O2VQSensZ1
TBD
a. Calculation of tO2VQSensZ1 is performed as follows:
tO2VQSensZ1 equals the quantity (tWCK2DQO(Zone_VQ1(max)) ‐ tWCK2DQO(Zone_VQ1(min)))
divided by (VDDQ(Zone_VQ1(max)) ‐ VDDQ(Zone_VQ1(min)))
= (tWCK2DQO(VDDQ(max)) ‐ tWCK2DQO(VDDQ(min))) / (VDDQ(max) ‐ VDDQ(min)).
b. VDD(typ), Tcase = 85°C, worst‐case process corner.
Table 49. WCK-to-Data READ Timing Sensitivity to VDD
Parameter
Symbol
Values
TBD
Units
Notes
PLL on
PLL off
a b
t
WCK2DQO Sensitivity to variations in VDD for zone_VD1
ps/V
,
O2VDSensZ1
TBD
a. Calculation of tO2VDSensZ1 is performed as follows:
tO2VDSensZ1 equals the quantity (tWCK2DQO(Zone_VD1(max)) ‐ tWCK2DQO(Zone_VD1(min)))
divided by (VDD(Zone_VD1(max)) ‐ VDD(Zone_VD1(min)))
= (tWCK2DQO(VDD(max)) ‐ tWCK2DQO(VDD(min))) / (VDD(max) ‐ VDD(min)).
b. VDDQ(typ), Tcase = 85°C, worst‐case process corner.
Table 50. WCK-to-Data READ Timing Sensitivity to Tcase
Parameter
Symbol
Values
TBD
Units
Notes
PLL on
PLL off
a b
t
WCK2DQO Sensitivity to variations in Tcase for zone_T1
a. Calculation of tO2TSensZ1 is performed as follows:
ps/°C
,
O2TSensZ1
TBD
tO2TSensZ1 equals the quantity (tWCK2DQO(Zone_T1(max)) ‐ tWCK2DQO(Zone_T1(min)))
divided by (Tcase(Zone_T1(max)) ‐ Tcase(Zone_T1(min)))
= (tWCK2DQO(Tcase(max)) ‐ tWCK2DQO(Tcase(min))) / (Tcase(max) ‐ Tcase(min)).
b. VDDQ(typ), VDD(typ), worst‐case process corner.
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H5GQ2H24AFR
Tables 51, 52 and 53 below provide information for WRITE timings.
.
Table 51. WCK-to-Data WRITE Timing Sensitivity to VDDQ
Parameter
Symbol
Values
TBD
Units Notes
PLL on
PLL off
a b
t
WCK2DQI Sensitivity to variations in VDDQ for zone_VQ1
a. Calculation of tI2VQSensZ1 is performed as follows:
ps/V
,
I2VQSensZ1
TBD
tI2VQSensZ1 equals the quantity (tWCK2DQI(Zone_VQ1(max)) ‐ tWCK2DQI(Zone_VQ1(min)))
divided by (VDDQ(Zone_VQ1(max)) ‐ VDDQ(Zone_VQ1(min)))
= (tWCK2DQI(VDDQ(max)) ‐ tWCK2DQI(VDDQ(min))) / (VDDQ(max) ‐ VDDQ(min)).
b. VDD(typ), Tcase = 85°C, worst‐case process corner.
Table 52. WCK-to-Data WRITE Timing Sensitivity to VDD
Parameter
Symbol
Values
TBD
Units Notes
PLL on
PLL off
a b
t
WCK2DQI Sensitivity to variations in VDD for zone_VD1
ps/V
,
I2VDSensZ1
TBD
a. Calculation of tO2VDSensZ1 is performed as follows:
tI2VDSensZ1 equals the quantity (tWCK2DQI(Zone_VD1(max)) ‐ tWCK2DQI(Zone_VD1(min)))
divided by (VDD(Zone_VD1(max)) ‐ VDD(Zone_VD1(min)))
= (tWCK2DQI(VDD(max)) ‐ tWCK2DQI(VDD(min))) / (VDD(max) ‐ VDD(min)).
b. VDDQ(typ), Tcase = 85°C, worst‐case process corner.
Table 53. WCK-to-Data WRITE Timing Sensitivity to Tcase
Parameter
Symbol
Values Units
Notes
PLL on
PLL off
TBD
TBD
a b
t
WCK2DQI Sensitivity to variations in Tcase for zone_T1
ps/°C
,
I2TSensZ1
a. Calculation of tI2TSensZ1 is performed as follows:
tI2TSensZ1 equals the quantity (tWCK2DQI(Zone_T1(max)) ‐ tWCK2DQI(Zone_T1(min)))
divided by (Tcase(Zone_T1(max)) ‐ Tcase(Zone_T1(min)))
= (tWCK2DQI(Tcase(max)) ‐ tWCK2DQI(Tcase(min))) / (Tcase(max) ‐ Tcase(min)).
b. VDDQ(typ), VDD(typ), worst‐case process corner.
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7. PACKAGE SPECIFICATION
1
2
3
4
5
6
7
8
9
10
11
12
BYTE 1
13
14
BYTE 0
VPP,
NC
VSSQ
VSSQ
VDDQ
VSSQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VDD
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
A
B
DQ1
DQ3
DQ0
DQ2
VSSQ
VREFD
VSS
DQ9
DQ11
EDC1
DBI1#
DQ13
DQ15
VDDQ
DQ8
DQ10
VSSQ
VDDQ
VSS
VDD
VSSQ
VDD
VSS
EDC0
C
D
E
VDD
VDDQ
VSSQ
VDDQ
VDD
VDDQ WCK01
DBI0#
DQ5
WCK01#
VDDQ
VSSQ
DQ4
DQ6
VDD
VDDQ
VSSQ
VSS
DQ12
DQ14
VDD
VDDQ
VSSQ
VSS
DQ7
F
VDDQ
G
H
J
RAS#
CS#
A9
A1
A10
A0
BA3
A3
BA0
A2
VSS
VSSQ VDDQ
VDDQ VSSQ
VSS
A12
RFU,
NC
ABI#
CKE#
MF
RESET#
SEN
ZQ
CK
CK#
VREFC
VSS
A11
A6
A8
A7
BA1
A5
BA2
A4
VSS
VSSQ
VDDQ
VDDQ
VSSQ
VDDQ
DQ23
K
L
VDD
VDD
VDDQ
VSSQ
VDDQ
CAS#
VDD
VSS
VSS
VDD
WE#
DQ31
DQ29
VDDQ
VDDQ
VDDQ
VSSQ
VDDQ
VSSQ
DQ30
VSSQ
DQ22
M
N
P
VDDQ
VSSQ
VSSQ
VDDQ
VSS
DQ28
DQ21
DBI2#
DQ20
VDD
VDDQ
VDDQ DBI3#
WCK23#
WCK23
VDDQ
VDD
VSS
EDC3
VSSQ
VSSQ
VSSQ
VSSQ
VDDQ
VSSQ
VSSQ
VDD
VSS
VSSQ
DQ18
DQ16
EDC2
DQ19
R
T
VDDQ DQ27
VDDQ
VSSQ
DQ26
DQ24
VDDQ
VPP,
VSSQ
DQ25
VSSQ
VREFD
DQ17
U
NC
x32 mode: ON
x16 mode: ON
x32 mode: ON
x16 mode: OFF
BYTE 3
BYTE 2
Figure 81. GDDR5 SGRAM 170ball BGA Ball-out MF=0
Note) Top View (as seen thru package), MF = LOW (MF = 0)
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H5GQ2H24AFR
1
2
3
4
5
6
7
8
9
10
11
12
BYTE 2
13
14
BYTE 3
VPP,
NC
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VDD
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
A
B
DQ25
DQ27
EDC3
DQ24
VREFD
VSS
DQ17
DQ19
EDC2
DBI2#
DQ21
DQ23
VDDQ
VSSQ
VDDQ
VSSQ
DQ16
DQ18
VSSQ
VSSQ
VSS
DQ26
VSSQ
VDDQ
VSSQ
VDD
VDD
VSS
C
D
E
VDD
VDDQ
VDDQ WCK23
VSSQ DQ28
DBI3#
WCK23#
VDDQ
VSSQ
VSS
VDDQ
VSSQ
DQ20
DQ22
VDD
VSSQ DQ29
VDDQ
CAS#
VDDQ
DQ31
DQ30
VDD
F
VDD
VDDQ
G
H
J
WE#
VSS
A11
A6
BA1
A5
BA2
A4
A8
A7
VSS
MF
VSSQ VDDQ
VDDQ VSSQ
VSS
A12
RFU,
NC
ABI#
CKE#
SEN
RESET#
VSSQ
ZQ
CK
CK#
VREFC
VSS
BA3
A3
A9
A1
BA0
A2
A10
A0
VSS
K
L
VDDQ
VDDQ
VSSQ
VDDQ
VDD
VDDQ
DQ7
VSS
VSSQ
VDDQ
WCK01#
VDD
VDD
VDDQ
VSSQ
VDDQ
VDD
VSS
RAS#
VDD
CS#
VDDQ
VDDQ
M
N
P
VSSQ
VDDQ
VSSQ
VDDQ
DQ6
DQ4
DQ15
DQ14
DQ5
VSSQ
VDDQ
VSSQ
VSSQ
VDDQ
VSS
DQ13
DBI1#
DQ12
VDD
VDDQ
DBI0#
WCK01
VSSQ
VSSQ EDC0
VSSQ
VDDQ
VSSQ
R
T
VSSQ
VDD
VSS
VSSQ
DQ10
DQ8
EDC1
DQ11
VDDQ
DQ3
VSS
VDDQ
VSSQ
VDDQ
VSSQ
DQ2
DQ0
VPP,
NC
VSSQ
DQ1
U
VREFD
DQ9
x32 mode: ON
x16 mode: ON
x32 mode: ON
x16 mode: OFF
BYTE 1
BYTE 0
Figure 81. GDDR5 SGRAM 170ball BGA Ball-out MF=1
Note) Top View (as seen thru package), MF = HIGH (MF = 1)
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H5GQ2H24AFR
7.1. SIGNALS
Table 54. Ball-out Description
SYMBOL
TYPE
DESCRIPTION
CK, CK#
Input
Clock: CK and CK# are differential clock inputs. Command inputs are latched on the rising
edge of CK. Address inputs are latched on the rising edge of CK and the rising edge of CK#.
All latencies are referenced to CK. CK and CK# are externally terminated.
WCK01,
WCK01#,
WCK23,
WCK23#
Input
Input
Write Clocks: WCK and WCK# are differential clocks used for WRITE data capture and READ
data output. WCK01/WCK01# is associated with DQ0‐DQ15, DBI0#, DBI1#, EDC0 and EDC1.
WCK23/WCK23# is associated with DQ16‐DQ31, DBI2#, DBI3#, EDC2 and EDC3.
CKE#
Clock Enable: CKE# LOW activates and CKE# HIGH deactivates the internal clock, device
input buffers, and output drivers. Taking CKE# HIGH provides PRECHARGE POWER‐
DOWN and SELF REFRESH operations (all banks idle), or ACTIVE POWER‐DOWN (row
ACTIVE in any bank). CKE# must be maintained LOW throughout read and write accesses.
The value of CKE# latched at power‐up with RESET# going High determines the termination
value of the address and command inputs.
CS#
Input
Chip Select: CS# LOW enables and CS# HIGH disables the command decoder. All commands
are masked when CS# is registered HIGH. CS# provides for external rank selection on systems
with multiple ranks. CS# is considered part of the command code.
RAS#,
Input
Input
Command Inputs: RAS#, CAS#, and WE# (along with CS#) define the command being
entered.
Bank Address Inputs: BA0 ‐ BA3 define to which bank an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA0‐BA3 also determine which Mode Register is
accessed with an MODE REGISTER SET command. BA0‐BA3 are sampled with the rising
edge of CK.
CAS#,WE#
BA0–BA3
Input
Address Inputs: A0‐A12 provide the row address for ACTIVE commands, A0‐A5 (A6)
provide the column address and A8 defines the auto precharge function for READ/WRITE
commands, to select one location out of the memory array in the respective bank. A8 sampled
during a PRECHARGE command determines whether the PRECHARGE applies to one bank
(A8 LOW, bank selected by BA0‐BA3) or all banks (A8 HIGH). The address inputs also
provide the op‐code during a MODE REGISTER SET command and the data bits during a
LDFF command. A8‐A11(A12) are sampled with the rising edge of CK and A0‐A7 are
sampled with the rising edge of CK#.
A0–A12
DQ0–31
DBI#0‐3
I/O
I/O
Data Input/Output: 32‐bit data bus
Data Bus Inversion. DBI#0 is associated with DQ0‐DQ7, DBI#1 is associated with DQ8‐DQ15,
DBI#2 is associated with DQ16‐DQ23, DBI#3 is associated with DQ24‐DQ31.
EDC0‐3
Output
Error Detection Code. The calculated CRC data is transmitted on these pins. In addition these
pins drive a ‘hold’ pattern when idle and can be used as an RDQS function. EDC0 is
associated with DQ0‐DQ7, EDC1 is associated with DQ8‐DQ15, EDC2 is associated with
DQ16‐DQ23, EDC3 is associated with DQ24‐DQ31.
ABI#
VddQ
VssQ
Vdd
Vss
Vrefd
Vrefc
Vpp
MF
Input
Supply
Supply
Supply
Supply
Supply
Supply
Supply
Reference
Reference
Address Bus Inversion
I/O Power Supply. Isolated on the die for improved noise immunity.
I/O Ground: Isolated on the die for improved noise immunity.
Power Supply
Ground
Reference Voltage for DQ, DBI#, and EDC pins.
Reference Voltage for address and command pins.
Pump Voltage
Mirror Function: VDDQ CMOS input. Must be tied to power or ground.
External Reference Pin for autocalibration
ZQ
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ2H24AFR
Table 54. Ball-out Description
SYMBOL
TYPE
DESCRIPTION
RFU
NC
Reserved for Future Use
Not connected
SEN
RESET#
Input
Input
Scan enable. VDDQ CMOS input. Must be tied to the ground when not in use.
Reset Pin. VDDQ CMOS input. RESET# Low asynchronously initiates a full chip reset. With
RESET# Low all ODTs are disabled.A full chip reset may be performed at any time by pulling
RESET# Low.
Figure 82 clarifies the use of the MF=0 and MF=1 ball‐outs in x16 mode and why the bytes are renumbered
to give the controller the view of the same bytes that a controller sees with a single x32 device. This is
important for Address Training, DM and EDC functionality. For more details see the x16 enable and MF
enable section.
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responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
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H5GQ2H24AFR
1
1
2
0
0
3
=
+
2
3
Top view thru package
(PCB below)
Top view thru PCB
(PCB above)
Controller view
x16 MF=0
x16 MF=0
x16 MF=1
x16 MF=1
Legend:
DQ
ADDRESS/COMMAND (except CS#)
CS#
Figure 82. Byte Orientation in Clamshell Topology
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H5GQ2H24AFR
7.2. ON DIE TERMINATION (ODT)
GDDR5 SGRAMs support multiple termination modes for its high speed input signals. When the termina‐
tion is enabled for a receiver, an impedance defined for that termination mode is applied between that
input receiver and the VDDQ supply rail. This is commonly referred to as VDDQ termination. Registers
have been defined to control the termination modes. ADD/CMD Termination is controlled using MR1 bits
A4 and A5. Data termination is controlled using MR1 bits A2 and A3. WCK termination is controlled
using MR3 bits A8 and A9.
Table 55 includes all the high speed GDDR5 SGRAM signals whose receivers include on die termination to
VDDQ and whether their termination can be disabled by ADD/CMD Term, DQ Term, or WCK Term. A
“Yes” indicates whether the mode register field controls termination for the signal.
Table 55. Signals Affected by Termination Control Registers
ADD/CMD Term
MR1 (A4,A5)
DQ Term
MR1 (A2,A3)
WCK Term
MR3 (A8,A9)
Signal
x32
x16
x32
x16
x32
x16
RAS#, CAS#, WE, CS#, CKE#
Yes
Yes
No
No
No
No
A10/A0, A9/A1, BA0/A2, BA3/A3,
BA2/A4, BA1/A5, A11/A6, A8/A7,
A12/RFU/(NC), ABI#
Yes
Yes
No
No
No
No
DQ[7:0], DBI0#
No
No
No
No
No
No
Disabled
No
Yes
Yes
Yes
Yes
No
Yes
Disabled
Yes
No
No
No
No
Yes
No
Disabled
No
DQ[15:8], DBI1#
DQ[23:16], DBI2#
DQ[31:24], DBI3#
Disabled
No
Disabled
No
Disabled
Yes
WCK01, WCK01#, WCK23, WCK23#
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
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H5GQ2H24AFR
7.3. PACKAGE OUTLINE
BOTTOM VIEW
(170 ball)
TOP VIEW
SIDE VIEW
pkg
height
U
T
R
p
N
M
L
K
J
H
G
F
E
D
C
B
A
pkg
standoff
5x0.8=4.0
13x0.8=10.4
12
0.8
pkg
x
170 x
Figure 83. Package Dimensions2
Table 56. Package Parameters
Max
Nominal
Variation
pkg
pkg
12.0
x
14.0
y
pkg
0.350
1.100
+/‐ 0.050
+/‐ 0.100
standoff
pkg
height
Notes:
1) GDDR5 package size, height and standoff specification is compliant to MO‐207 Rev L, variation DAA‐z
2) All demensions in mm unless otherwise noted.
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responsability for use of circuits described. No patent licenses are implied.
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H5GQ2H24AFR
7.4. MIRROR FUNCTION (MF) ENABLE and x16 MODE ENABLE
The GDDR5 SGRAM provides a mirror function (MF) pin to change the physical location of the command,
address, data, and WCK pins assisting in routing devices back to back. The MF ball should be tied directly
to VSSQ or VDDQ depending on the control line orientation Desired. But, in case of BST(Boundary Scan
Test), it cannot be tied directly to VDDQ or VSSQ
The GDDR5 SGRAM can operate in a x32 mode or a x16 mode to allow a clamshell configuration with a
point to point connection on the high speed data signal. The disabled pins in x16 mode should all be in a
Hi‐Z state, non‐terminating.
The x16 mode is detected at power up on the pin at location C‐13 which is EDC1 when configured to MF=0
and EDC2 when configured to MF=1. For x16 mode this pin is tied to VSSQ; the pin is part of the two bytes
that are disabled in this mode and therefore not needed for EDC functionality. For x32 mode this pin is
active and always terminated to VDDQ in the system or by the controller. The configuration is set with
RESET# going High. Once the configuration has been set, it cannot be changed during normal operation.
Usually the configuration is fixed in the system. Details of the x16 mode detection are depicted in Figure .
A comparison of x32 mode and x16 mode systems is shown in Figure .
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VDDQ
GDDR5
in x16 mode
MF=0
EDC data from
other DRAM
enable
Termination
EDC1
EDC Data
EDC1
RX
EDC
TX
EN
x16
0 = x16
D
Controller
RX
VSSQ
RESET#
RESET#
RESET#
GDDR5
in x16 mode
MF=1
VDDQ
EDC data from
other DRAM
enable
Termination
EDC2
EDC Data
EDC2
RX
EDC
TX
EN
x16
0 = x16
D
RX
VSSQ
Controller
RESET#
RESET#
RESET#
VDDQ
GDDR5
in x32 mode
MF=0 or 1
enable
Termination
EDC1
EDC Data
EDC1
EDC
TX
RX
EN
x32
1 = x32
D
RX
VSSQ
Controller
RESET#
RESET#
RESET#
Figure 84. Enabling x16 mode
Figure 87. Example GDDR5 PCB Layout Topologies
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Table 57. x16 mode and MF
MODE
MF
EDC1 (MF=0) or EDC2 (MF=1)
x16 non‐mirrored
x32 non‐mirrored
x16 mirrored
VSSQ
VSSQ
VDDQ
VDDQ
VSSQ
VDDQ (terminated by the system or controller)
VSSQ
x32 mirrored
VDDQ (terminated by the system or controller)
GDDR5
x32
GDDR5
x16
GDDR5
x16
DQ0‐DQ7,DBI0#
DQ0‐DQ7,DBI0#
EDC0
WCK01,WCK01#
Byte0
Byte1
Byte2
Byte3
Byte0
EDC1
EDC0
WCK01,WCK01#
EDC2
Byte1
DQ8‐DQ15,DBI1#
DQ8‐DQ15,DBI1#
EDC1
EDC1
Byte2
DQ16‐DQ23,DBI2#
DQ16‐DQ23,DBI2#
EDC2
WCK23,WCK23#
EDC2
WCK23,WCK23#
Byte3
DQ24‐DQ31,DBI3#
DQ24‐DQ31,DBI3#
EDC3
EDC3
Address Bus
Address Bus
ADD/
CMD
ADD/
CMD
Command Bus
Command Bus
CK,CK#
RESET#
CK,CK#
RESET
MF
MF
MF
VSSQ
VSSQ
VDDQ
Figure 85. System view for x32 mode vs. x16 mode
Figure 85 and Figure 86 show examples of the board channels and topologies that are supported in
GDDR5 in order to illustrate the expected usage of x16 mode and the MF pin.
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64bit channel
32bit channel
16 DQ
(P2P)
32 DQ
(P2P)
32 DQ
(P2P)
ADD/CMD
(P22P)
ADD/CMD
(P22P)
ADD/CMD
(P2P)
16 DQ
(P2P)
32 DQ
(P2P)
Figure 86. Example Channel Topologies
For flexibility of PCB routing GDDR5 SGRAM devices, the ball‐out includes definition of both MF=0 and
MF=1. The following simple block diagrams in Figure 87 demonstrate some of the flexibility of PCB rout‐
ing.
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Single side configurations
1
x32 MF=0
x32 MF=0
x32 MF=1
x32 MF=1
x32 MF=0
x32 MF=0
x32 MF=1
x32 MF=0
x32 MF=1
x32 MF=1
1
x32 MF=0
1
x32 MF=1
x16 MF=0
x16 MF=0
x16 MF=1
Clamshell configurations
x32 MF=01
x32 MF=1
x32 MF=11
x16 MF=1
x16 MF=1
x32 MF=1
x32 MF=01
x16 MF=0
Legend:
DQ
x32 MF=0
ADDRESS/COMMAND (except CS#)
CS#
Note 1: 32bit channel is shown as an example.
Also applies with x16 on a 16bit channel.
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responsability for use of circuits described. No patent licenses are implied.
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8. BOUNDARY SCAN
The GDDR5 SGRAM incorporates a modified boundary scan test mode. This mode does not operate in
accordance with IEEE Standard 1149.1‐1990. To save the current GDDR5 SGRAM’s ball‐out, this mode will
scan the parallel data input and output the scanned data on EDC0 located at C‐2 controlled by an add‐on
pin, SEN which is located at J‐10 of the 170 ball package.
Scan mode is entered directly after power‐up while the device is in reset state. This ensures that no
unwanted access commands are being executed prior to scan mode.
Boundary scan does not distinguish between x16 and x32 modes, and data is captured on all pins. The user
has to make sure to mask those bits in the test program which are not wired in the system.
For normal device operation, i.e. after scan mode operation, it is required that device re‐initialization
occurs through device power‐down and then power‐up.
It is possible to operate the GDDR5 SGRAM without using the boundary scan feature. SEN should be tied
Low to prevent the device from entering the boundary scan mode. The other pins which are used for scan
mode (RESET#, MF, EDC0 and CS#) will be operating as normal when SEN is deasserted.
Table 58. Boundary Scan Exit Order
BIT#
BALL
BIT#
BALL
BIT#
BALL
BIT#
BALL
BIT#
BALL
1
2
D‐5
D‐4
D‐2
E‐4
E‐2
F‐4
F‐2
G‐3
H‐5
H‐4
J‐5
13
14
15
16
17
18
19
20
21
22
23
24
J‐3
K‐4
K‐5
L‐3
M‐2
M‐4
N‐2
N‐4
P‐2
P‐4
P‐5
R‐2
25
26
27
28
29
30
31
32
33
34
35
36
T‐2
T‐4
37
38
39
40
41
42
43
44
45
46
47
48
M‐11
M‐13
L‐12
K‐10
K‐11
J‐13
49
50
51
52
53
54
55
56
57
58
59
60
E‐13
E‐11
D‐13
C‐13
B‐13
B‐11
A‐13
A‐11
A‐4
3
U‐2
4
U‐4
5
U‐11
U‐13
T‐11
T‐13
R‐13
P‐13
N‐11
N‐13
6
7
J‐12
8
J‐11
9
H‐11
H‐10
F‐13
F‐11
10
11
12
A‐2
B‐4
J‐4
B‐2
Note: When the device is in scan mode, mirror function is disabled (MF=0) and none of the pins are remapped.
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responsability for use of circuits described. No patent licenses are implied.
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Table 59. Scan Pin Description
PACKAGE
SYMBOL
BALL
NORMAL
FUNCTION
TYPE
DESCRIPTION
Scan Shift: capture the data input from the pad at logic LOW
and shift the data on the chain at logic HIGH.
J‐2
SSH
SCK
RESET#
CS#
Input
Input
Scan Clock. Not a true clock, could be a single pulse or series of
pulses. All scan inputs will be referenced to the rising edge of
the scan clock.
G‐12
C‐2
J‐10
SOUT
SEN
EDC0
RFU
Output Scan Output.
Scan Enable: logic HIGH enables scan mode. Scan mode is
Input
disabled at logic LOW. Must be tied to VSSQ when not in use.
Scan Output Enable: enables (registered LOW) and disables
(registered HIGH) SOUT data. This pin will be tied to VDDQ or
GND through a resistor (typically 1K Ohm) for normal
operation. Tester needs to overdrive this pin to guarantee the
required input logic level in scan mode.
J‐1
SOE#
MF
Input
Notes:
1. When SEN is asserted, no commands are to be executed by the GDDR5 SGRAM. This applies to both user
commands and manufacturing commands which may exist while RESET# is deasserted.
2. All scan functionality is valid only after the appropriate power‐up (Steps 1‐4 of initialization sequence).
3. In scan mode, all ODT will be disabled.
Table 60. Scan AC Electrical Characteristics
UNIT
S
PARAMETER/CONDITION
SYMBOL MIN
MAX
NOTES
Clock
Clock cycle time
t
40
‐
ns
1
SCK
Scan Command Time
Scan enable setup time
Scan enable hold time
t
20
20
14
14
‐
‐
‐
‐
ns
ns
ns
ns
1
1
1
1
SES
t
SEH
Scan command setup time for SSH, SOE# and SOUT
Scan command hold time for SSH, SOE# and SOUT
Scan Capture Time
t
SCS
t
SCH
Scan capture setup time
Scan capture hold time
Scan Shift Time
t
10
10
‐
‐
ns
ns
1
1
SDS
t
SDH
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Table 60. Scan AC Electrical Characteristics
UNIT
S
PARAMETER/CONDITION
SYMBOL MIN
MAX
NOTES
Scan clock to valid scan output
Scan clock to scan output hold
t
‐
6
ns
ns
1
1
SAC
t
1.5
‐
SOH
Notes:
1. The parameter applies only when SEN is asserted.
Not a true clock, but a single pulse
or a series of pulses
SCK
tSES
SEN
SSH
(Low)
tSCS
SOE#
tSDS
tSDH
Pins
VALID
under
Test
Figure 88. Scan Capture Timing
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H5GQ2H24AFR
SCK
tSES
SEN
SSH
tSCS
tSCS
SOE#
tSOH
Scan Out
bit 1
Scan Out
bit 2
Scan Out
bit 3
Scan Out
bit 4
tSAC
SOUT
Figure 89. Scan Shift Timing
VDD
VDDQ
VREF
RESET#
(SSH in
Scan Mode)
tSCS
SEN
SCK
tSES
tSCK
tSCS
SOE#
SOUT
tSCS
Scan Out
tSAC
bit 1
tSDS
tSDH
Pins
under
Test
VALID
200us
RESET at power‐up
Boundary Scan Mode
Power‐up
VDD stable
Don’t Care
Figure 90. Scan Initialization Sequence
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SET
D
D
D
Q
Q
Dedicated Scan D FF per signal under test
DQ3
CLR
SET
Signals in scan chain:
DQ[31:0], EDC[3:1], DBI#[3:0],
WCK01, WCK01#, WCK23, WCK23#,
RAS#, CAS#, WE#, CKE#, ABI#,
A[7:0]***, CK, CK#, ZQ
Q
Q
DQ2
DQ1
CLR
SET
Pins under test
Note: A[7:0]*** are multiplexed pins and
represent A[12:8] and BA[3:0]
Q
Q
Signals not in the scan chain:
VDDQ, VSSQ, VDD, VSS, VREFx
CLR
SET
D
Q
Q
SOUT, Scan Out Pin EDC0
WCK01#
SSH, Scan Shift Pin RESET#
SCK, Scan Clock Pin CS#
CLR
SEN, Scan Enable Pin SEN
SOE#, Scan Output Enable Pin MF
Figure. 92 Internal Block Diagram
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responsability for use of circuits described. No patent licenses are implied.
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