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H5MS5132DFR-J3M [HYNIX]

DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN AND LEAD FREE, FBGA-90;

H5MS5132DFR-J3M


元器件型号：	H5MS5132DFR-J3M
生产厂家：	HYNIX SEMICONDUCTOR
描述和应用：	DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN AND LEAD FREE, FBGA-90 时钟动态存储器双倍数据速率内存集成电路
PDF文件：	总62页 (文件大小：2311K)
下载文档：	下载PDF数据表文档文件
型号参数：H5MS5132DFR-J3M参数

H5MS5132DFR-L3M

DDR DRAM, 16MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN AND LEAD FREE, FBGA-90

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0 HYNIX

H5MS5132DFR-L3M

DDR DRAM, 16MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN AND LEAD FREE, FBGA-90

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0 HYNIX

H5MS5162DFR-E3M

512Mb (32Mx16bit) Mobile DDR SDRAM

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37 HYNIX

H5MS5162DFR-J3M

512Mb (32Mx16bit) Mobile DDR SDRAM

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58 HYNIX

H5MS5162DFR-K3M

512Mb (32Mx16bit) Mobile DDR SDRAM

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38 HYNIX

H5MS5162DFR-L3M

512Mb (32Mx16bit) Mobile DDR SDRAM

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28 HYNIX

H5MS5162EFR

536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)

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80 HYNIX

H5N0301SM

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45 ETC

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26 RENESAS

H5N1503P-E

Silicon N Channel MOS FET High Speed Power Switching

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11 RENESAS

H5N1506P

Silicon N Channel MOS FET High Speed Power Switching

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24 RENESAS

H5N1506P-E

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7 RENESAS

H5N2001LD

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16 RENESAS

H5N2001LD-E

Silicon N Channel MOS FET High Speed Power Switching

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11 RENESAS

H5N2001LM

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17 RENESAS

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