HY27SF161G2A-TPIB_技术文档

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

1Gb NAND FLASH

HY27SF081G2A

HY27SF161G2A

This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev 0.3 / Nov. 2006

1

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Document Title

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

Revision History

Revision

History

No.

Draft Date

Remark

0.01

Mar. 16. 2006 Preliminary

Initial Draft.

1) Change AC Conditions table

2) Change DC and Operating Characteristics

Test Conditions (ICC1)

Test Conditions (IOL)

tRC=30ns,

CE=VIL, IOUT=0mA

Before

After

VOL=0.1V

VOL=0.2V

tRC=50ns,

CE=VIL, IOUT=0mA

0.1

Apr. 19. 2006 Preliminary

Typ (ICC1. ICC2, ICC3)

Max (ICC1. ICC2, ICC3)

Before

After

30

20

15

10

3) Change AC Timing Characteristics

4) Correct Supply Vlotage

Before

After

Vcc=1.65 to 1.95V

Vcc=1.70 to 1.95V

0.2

0.3

May. 18. 2006 Preliminary

Nov. 23. 2006

1) Change NOP

1) Change 1Gb Package Type

- FBGA package is added

- Figure & dimension are changed

2) Delet Preliminary

3) Correct copy back function

Rev 0.3 / Nov. 2006

2

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

FEATURES SUMMARY

HIGH DENSITY NAND FLASH MEMORIES

FAST BLOCK ERASE

- Block erase time: 2ms (Typ.)

- Cost effective solutions for mass storage applications

STATUS REGISTER

NAND INTERFACE

- x8 or x16 bus width.

- Multiplexed Address/ Data

- Pinout compatibility for all densities

ELECTRONIC SIGNATURE

- 1st cycle: Manufacturer Code

- 2nd cycle: Device Code

- 3rd cycle: Internal chip number, Cell Type, Number of

Simultaneously Programmed Pages.

SUPPLY VOLTAGE

- VCC = 1.7 to 1.95V : HY27SFxx1G2A

- 4th cycle: Page size, Block size, Organization, Spare

size

Memory Cell Array

= (2K+64) Bytes x 64 Pages x 1,024 Blocks

= (1K+32) Words x 64 Pages x 1,024 Blocks

SERIAL NUMBER OPTION

CHIP ENABLE DON’T CARE

PAGE SIZE

- Simple interface with microcontroller

- x8 device : (2K+64 spare) Bytes

: HY27SF081G2A

DATA RETENTION

- 100,000 Program/Erase cycles (with 1bit/528byte ECC)

- 10 years Data Retention

- x16 device : (1K+32 spare) Words

: HY27SF161G2A

PACKAGE

BLOCK SIZE

- HY27SF(08/16)1G2A-T(P)

: 48-Pin TSOP1 (12 x 20 x 1.2 mm)

- HY27SF(08/16)1G2A-T (Lead)

- HY27SF(08/16)1G2A-TP (Lead Free)

- x8 device: (128K + 4K spare) Bytes

- x16 device: (64K + 2K spare) Words

PAGE READ / PROGRAM

- Random access: 25us (max.)

- Sequential access: 50ns (min.)

- Page program time: 200us (typ.)

- HY27SF081G2A-S(P)

: 48-Pin USOP1 (12 x 17 x 0.65 mm)

- HY27SF081G2A-S (Lead)

- HY27SF081G2A-SP (Lead Free)

COPY BACK PROGRAM MODE

- Fast page copy without external buffering

- HY27SF081G2A-F(P)

: 63-Ball FBGA (9 x 11 x 1.0 mm)

- HY27SF081G2A-F (Lead)

- HY27SF081G2A-FP (Lead Free)

CACHE PROGRAM

- Internal (2048+64) Byte buffer to improve the program

throughput

Rev 0.3 / Nov. 2006

3

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

1. SUMMARY DESCRIPTION

The Hynix HY27SF(08/16)1G2A series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc

Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided

into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected

Flash cells.

A program operation allows to write the 2112-byte page in typical 200us and an erase operation can be performed in

typical 2ms on a 128K-byte(X8 device) block.

Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data

input/output as well as command input. This interface allows a reduced pin count and easy migration towards different

densities, without any rearrangement of footprint.

Commands, Data and Addresses are synchronously introduced using CE, WE, ALE and CLE input pin. The on-chip Pro-

gram/Erase Controller automates all program and erase functions including pulse repetition, where required, and inter-

nal verification and margining of data.

The modify operations can be locked using the WP input pin or using the extended lock block feature described later.

The output pin R/B (open drain buffer) signals the status of the device during each operation. In a system with multi-

ple memories the R/B pins can be connected all together to provide a global status signal.

Even the write-intensive systems can take advantage of the HY27SF(08/16)1G2A extended reliability of 100K program/

erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.

The chip could be offered with the CE don’t care function. This function allows the direct download of the code from

the NAND Flash memory device by a microcontroller, since the CE transitions do not stop the read operation.

The copy back function allows the optimization of defective blocks management: when a page program operation fails

the data can be directly programmed in another page inside the same array section without the time consuming serial

data insertion phase.

The cache program feature allows the data insertion in the cache register while the data register is copied into the

flash array. This pipelined program operation improves the program throughput when long files are written inside the

memory. A cache read feature is also implemented. This feature allows to dramatically improve the read throughput

when consecutive pages have to be streamed out.

The HYNIX HY27SF(08/16)1G2A series is available in 48 - TSOP1 12 x 20 mm, 48 - USOP 12 x 17 mm, FBGA 9 x 11

mm.

1.1 Product List

PART NUMBER

HY27SF081G2A

HY27SF161G2A

ORIZATION

VCC RANGE

PACKAGE

63FBGA / 48TSOP1 / 48USOP1

48TSOP1

x8

1.7V - 1.95 Volt

x16

Rev 0.3 / Nov. 2006

4

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

9&&

,2ꢀa,2ꢁ

&(

,2ꢂa,2ꢃꢄꢅꢆ[ꢃꢇꢅ2QO\ꢈ

:(

5ꢉ%

5(

$/(

&/(

:3

966

Figure1: Logic Diagram

IO15 - IO8

IO7 - IO0

CLE

Data Inputs / Outputs (x16 Only)

Data Inputs / Outputs

Command latch enable

Address latch enable

Chip Enable

ALE

CE

RE

Read Enable

WE

Write Enable

WP

Write Protect

R/B

Ready / Busy

Vcc

Power Supply

Vss

Ground

NC

No Connection

Table 1: Signal Names

Rev 0.3 / Nov. 2006

5

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

ꢇ

ꢄꢉ

1&

5ꢀ%

5(

9VV

ꢇ

ꢄꢉ

1&

5ꢀ%

5(

1&

,ꢀ2ꢁ

,ꢀ2ꢂ

,ꢀ2ꢃ

,ꢀ2ꢄ

1&

9FF

9VV

1&

,ꢀ2ꢅ

,ꢀ2ꢆ

,ꢀ2ꢇ

,ꢀ2ꢈ

1&

,ꢀ2ꢇꢃ

,ꢀ2ꢁ

,ꢀ2ꢇꢄ

,ꢀ2ꢂ

,ꢀ2ꢇꢅ

,ꢀ2ꢃ

,ꢀ2ꢇꢆ

,ꢀ2ꢄ

1&

9FF

1&

&(

1&

9FF

9VV

1&

&/(

$/(

:(

:3

1&

9FF

9VV

1&

&/(

$/(

:(

:3

1&

1$1'ꢅ)ODVK

7623ꢃ

1$1'ꢅ)ODVK

7623ꢃ

ꢇꢆ

ꢇꢅ

ꢅꢁ

ꢅꢂ

ꢇꢆ

ꢇꢅ

ꢅꢁ

ꢅꢂ

1&

ꢆ[ꢃꢇꢈ

ꢆ[ꢂꢈ

,ꢀ2ꢇꢇ

,ꢀ2ꢅ

,ꢀ2ꢇꢈ

,ꢀ2ꢆ

,ꢀ2ꢊ

,ꢀ2ꢇ

,ꢀ2ꢉ

,ꢀ2ꢈ

9VV

ꢆꢄ

ꢆꢃ

ꢆꢄ

ꢆꢃ

Figure 2. 48TSOP1 Contactions, x8 and x16 Device

ꢇ

ꢄꢉ

1&

5ꢀ%

5(

1&

,ꢀ2ꢁ

,ꢀ2ꢂ

,ꢀ2ꢃ

,ꢀ2ꢄ

1&

&(

1&

9FF

9VV

1&

&/(

$/(

:(

:3

1&

1$1'ꢅ)ODVK

8623ꢃ

9FF

9VV

1&

,ꢀ2ꢅ

,ꢀ2ꢆ

,ꢀ2ꢇ

,ꢀ2ꢈ

1&

ꢇꢆ

ꢇꢅ

ꢅꢁ

ꢅꢂ

ꢆ[ꢂꢈ

1&

ꢆꢄ

ꢆꢃ

Figure 3. 48USOP1 Contactions, x8

Rev 0.3 / Nov. 2006

6

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

ꢃꢅꢅꢅꢅꢅꢅꢅꢅꢊꢅꢅꢅꢅꢅꢅꢅꢋꢅꢅꢅꢅꢅꢅꢅꢌꢅꢅꢅꢅꢅꢅꢅꢄꢅꢅꢅꢅꢅꢅꢇꢅꢅꢅꢅꢅꢅꢅꢅꢁꢅꢅꢅꢅꢅꢅꢅꢂꢅꢅꢅꢅꢅꢅꢅꢍꢅꢅꢅꢅꢅꢅꢃꢀ

$

%

1&

&

$/( 9VV

5ꢀ%

1&

:3

1&

&(

1&

:(

1&

'

&/(

5(

1&

9FF

1&

9FF

(

)

1&

9VV

1&

*

+

-

,ꢀ2ꢈ

,ꢀ2ꢇ

,ꢀ2ꢆ

,ꢀ2ꢃ ,ꢀ2ꢁ

9VV

,ꢀ2ꢅ ,ꢀ2ꢄ

,ꢀ2ꢂ

.

/

1&

0

Figure 4. 63FBGA Contactions, x8 Device (Top view through package)

Rev 0.3 / Nov. 2006

7

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

1.2 PIN DESCRIPTION

Pin Name

Description

DATA INPUTS/OUTPUTS

The IO pins allow to input command, address and data and to output data during read / program

IO0-IO7

IO8-IO15(1) operations. The inputs are latched on the rising edge of Write Enable (WE). The I/O buffer float to

High-Z when the device is deselected or the outputs are disabled.

COMMAND LATCH ENABLE

CLE

ALE

CE

This input activates the latching of the IO inputs inside the Command Register on the Rising edge of

Write Enable (WE).

ADDRESS LATCH ENABLE

This input activates the latching of the IO inputs inside the Address Register on the Rising edge of

Write Enable (WE).

CHIP ENABLE

This input controls the selection of the device. When the device is busy CE low does not deselect the

memory.

WRITE ENABLE

WE

This input acts as clock to latch Command, Address and Data. The IO inputs are latched on the rise

edge of WE.

READ ENABLE

The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is

valid tREA after the falling edge of RE which also increments the internal column address counter by

one.

RE

WRITE PROTECT

WP

The WP pin, when Low, provides an Hardware protection against undesired modify (program / erase)

operations.

READY BUSY

R/B

The Ready/Busy output is an Open Drain pin that signals the state of the memory.

SUPPLY VOLTAGE

The VCC supplies the power for all the operations (Read, Write, Erase).

VCC

VSS

NC

GROUND

NO CONNECTION

Table 2: Pin Description

NOTE:

1. For x16 version only

2. A 0.1uF capacitor should be connected between the Vcc Supply Voltage pin and the Vss Ground pin to decouple

the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required

during program and erase operations.

Rev 0.3 / Nov. 2006

8

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

IO0

A0

IO1

A1

IO2

A2

IO3

IO4

IO5

IO6

IO7

1st Cycle

2nd Cycle

3rd Cycle

4th Cycle

A3

A4

A5

A6

A7

A11

A15

L⁽¹⁾

A16

A24

L⁽¹⁾

A8

A9

A10

A14

A12

A20

A13

A21

A17

A18

A19

A22

A23

A25

A26

A27

Table 3: Address Cycle Map(x8)

NOTE:

1. L must be set to Low.

IO0

IO1

A1

IO2

A2

IO3

IO4

IO5

IO6

IO7

IO8-IO15

L⁽¹⁾

1st Cycle

2nd Cycle

3rd Cycle

4th Cycle

A0

A8

A3

A4

A5

A6

A7

L⁽¹⁾

A16

A24

L⁽¹⁾

A9

A10

A13

L⁽¹⁾

A11

A19

A12

A14

A15

A17

A18

A20

A21

A22

A23

A25

A26

L⁽¹⁾

Table 4: Address Cycle Map(x16)

NOTE:

1. L must be set to Low.

Acceptable command

during busy

FUNCTION

1st CYCLE 2nd CYCLE 3rd CYCLE 4th CYCLE

READ

00h

90h

FFh

80h

85h

60h

70h

80h

85h

05h

00h

34h

30h

35h

-

READ FOR COPY-BACK

READ ID

RESET

-

Yes

PAGE PROGRAM

COPY BACK PGM

BLOCK ERASE

10h

D0h

-

READ STATUS REGISTER

CACHE PROGRAM

15h

-

RANDOM DATA INPUT

RAMDOM DATA OUTPUT

CACHE READ START

CACHE READ EXIT

E0h

31h

-

Table 5: Command Set

Rev 0.3 / Nov. 2006

9

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

CLE

H

L

ALE

L

CE

L

WE

Rising

H

RE

WP

MODE

H

X

Command Input

Address Input(4 cycles)

Command Input

Address Input(4 cycles)

Read Mode

H

L

H

X

H

L

H

Write Mode

Data Input

H

L

H

L

H

L⁽¹⁾

L

Falling

X

Sequential Read and Data Output

During Read (Busy)

During Program (Busy)

During Erase (Busy)

Write Protect

L

H

X

H

X

H

L

X

H

X

0V/Vcc

Stand By

Table 6: Mode Selection

NOTE:

1. With the CE high during latency time does not stop the read operation

Rev 0.3 / Nov. 2006

10

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

2. BUS OPERATION

There are six standard bus operations that control the device. These are Command Input, Address Input, Data Input,

Data Output, Write Protect, and Standby.

Typically glitches less than 5 ns on Chip Enable, Write Enable and Read Enable are ignored by the memory and do not

affect bus operations.

2.1 Command Input.

Command Input bus operation is used to give a command to the memory device. Command are accepted with Chip

Enable low, Command Latch Enable High, Address Latch Enable low and Read Enable High and latched on the rising

edge of Write Enable. Moreover for commands that starts a modify operation (write/erase) the Write Protect pin must

be high. See figure 6 and table 13 for details of the timings requirements. Command codes are always applied on

IO7:0, disregarding the bus configuration (X8/X16).

2.2 Address Input.

Address Input bus operation allows the insertion of the memory address. To insert the 28 addresses needed to access

the 1Gbit 4 clock cycles (x8 version) are needed. Addresses are accepted with Chip Enable low, Address Latch Enable

High, Command Latch Enable low and Read Enable High and latched on the rising edge of Write Enable. Moreover for

commands that starts a modify operation (write/erase) the Write Protect pin must be high. See figure 7 and table 13

for details of the timings requirements. Addresses are always applied on IO7:0, disregarding the bus configuration

(X8/X16).

2.3 Data Input.

Data Input bus operation allows to feed to the device the data to be programmed. The data insertion is serially and

timed by the Write Enable cycles. Data are accepted only with Chip Enable low, Address Latch Enable low, Command

Latch Enable low, Read Enable High, and Write Protect High and latched on the rising edge of Write Enable. See figure

8 and table 13 for details of the timings requirements.

2.4 Data Output.

Data Output bus operation allows to read data from the memory array and to check the status register content, the

lock status and the ID data. Data can be serially shifted out toggling the Read Enable pin with Chip Enable low, Write

Enable High, Address Latch Enable low, and Command Latch Enable low. See figures 9,10,12,13 and table 13 for

details of the timings requirements.

2.5 Write Protect.

Hardware Write Protection is activated when the Write Protect pin is low. In this condition modify operation do not

start and the content of the memory is not altered. Write Protect pin is not latched by Write Enable to ensure the pro-

tection even during the power up.

2.6 Standby.

In Standby mode the device is deselected, outputs are disabled and Power Consumption is reduced.

Rev 0.3 / Nov. 2006

11

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

3. DEVICE OPERATION

3.1 Page Read.

Upon initial device power up, the device defaults to Read mode. This operation is also initiated by writing 00h and 30h

to the command register along with four address cycles. In two consecutive read operations, the second one does

need 00h command, which four address cycles and 30h command initiates that operation. Second read operation

always requires setup command if first read operation was executed using also random data out command.

Two types of operations are available: random read. The random read mode is enabled when the page address is

changed. The 2112 bytes (X8 device) or 1056 words (X16 device) of data within the selected page are transferred to

the data registers in less than 25us(tR). The system controller may detect the completion of this data transfer (tR) by

analyzing the output of R/B pin. Once the data in a page is loaded into the data registers, they may be read out in

50ns cycle time by sequentially pulsing RE. The repetitive high to low transitions of the RE clock make the device out-

put the data starting from the selected column address up to the last column address.

The device may output random data in a page instead of the consecutive sequential data by writing random

data output command. The column address of next data, which is going to be out, may be changed to the address

which follows random data output command.

Random data output can be operated multiple times regardless of how many times it is done in a page.

Random data output is not available in cache read.

3.2 Page Program.

The device is programmed basically by page, but it does allow multiple partial page programming of a word or consec-

utive bytes up to 2112 (X8 device) or words up to 1056 (X16 device), in a single page program cycle.

The number of consecutive partial page programming operation within the same page without an intervening erase

operation must not exceed 4 times for main array (X8 device:1time/512byte, X16 device:1time/256word) and 4 times

for spare array (X8 device:1time/16byte ,X16 device:1time/8word).

The addressing should be done in sequential order in a block. A page program cycle consists of a serial data loading

period in which up to 2112 bytes (X8 device) or 1056 words (X16 device) of data may be loaded into the data register,

followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell.

The serial data loading period begins by inputting the Serial Data Input command (80h), followed by the four cycle

address inputs and then serial data. The words other than those to be programmed do not need to be loaded. The

device supports random data input in a page. The column address of next data, which will be entered, may be

changed to the address which follows random data input command (85h). Random data input may be operated multi-

ple times regardless of how many times it is done in a page.

The Page Program confirm command (10h) initiates the programming process. Writing 10h alone without previously

entering the serial data will not initiate the programming process. The P/E/R Controller automatically executes the

algorithms and timings necessary for program and verify, thereby freeing the system controller for other tasks. Once

the program process starts, the Read Status Register command may be entered to read the status register. The system

controller can detect the completion of a program cycle by monitoring the R/B output, or the Status bit (I/O 6) of the

Status Register. Only the Read Status command and Reset command are valid while programming is in progress. When

the Page Program is complete, the Write Status Bit (I/O 0) may be checked. The internal write verify detects only

errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Status command

mode until another valid command is written to the command register. Figure 14 details the sequence.

Rev 0.3 / Nov. 2006

12

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

3.3 Block Erase.

The Erase operation is done on a block basis. Block address loading is accomplished in two cycles initiated by an Erase

Setup command (60h). Only address A18 to A27 (X8) or A17 to A26 (X16) is valid while A12 to A17 (X8) or A11 to A16

(X16) are ignored. The Erase Confirm command (D0h) following the block address loading initiates the internal erasing

process. This two-step sequence of setup followed by execution command ensures that memory contents are not acci-

dentally erased due to external noise conditions. At the rising edge of WE after the erase confirm command input, the

P/E/R controller handles erase and erase-verify.

Once the erase process starts, the Read Status Register command may be entered to read the status register.

The system controller can detect the completion of an erase by monitoring the R/B output, or the Status bit (I/O 6) of

the Status Register. Only the Read Status command and Reset command are valid while erasing is in progress. When

the erase operation is completed, the Write Status Bit (I/O 0) may be checked.

Figure 18 details the sequence.

3.4 Copy-Back Program.

The copy-back program is configured to quickly and efficiently rewrite data stored in one page without utilizing an

external memory. Since the time-consuming cycles of serial access and re-loading cycles are removed, the system per-

formance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of the block

also need to be copied to the newly assigned free block. The operation for performing a copy-back program is a

sequential execution of page-read without serial access and copyingprogram with the address of destination page. A

read operation with "35h" command and the address of the source page moves the whole 2112byte (X8 device) or

1056word (X16 device) data into the internal data buffer.

As soon as the device returns to Ready state, Copy Back command (85h) with the address cycles of destination page

may be written. The Program Confirm command (10h) is required to actually begin the programming operation. Data

input cycle for modifying a portion or multiple distant portions of the source page is allowed as shown in Figure 16.

"When there is a program-failure at Copy-Back operation, error is reported by pass/fail status. But, if

Copy-Back operations are accumulated over time, bit error due to charge loss is not checked by external

error detection/correction scheme. For this reason, two bit error correction is recommended for the use

of Copy-Back operation."

Figure 16 shows the command sequence for the copy-back operation.

The Copy Back Program operation requires three steps:

1. The source page must be read using the Read A command (one bus write cycle to setup the command and then

4 bus write cycles to input the source page address). This operation copies all 2KBytes from the page into the Page

Buffer.

2. When the device returns to the ready state (Ready/Busy High), the second bus write cycle of the command is

given with the 4bus cycles to input the target page address. The value for A27 (x8) from second to the last page

address must be same as the value given to A27 (x8) in first address.

3. Then the confirm command is issued to start the P/E/R Controller.

Note:

1. On the same plane.

2. It’s prohibited to operate copy-back program from an odd address page (source page) to an even address page

(target page) or from an even address page (source page) to an odd address page (target page).

Therefore, the copy-back program is permitted just between odd address pages or even address pages.

Rev 0.3 / Nov. 2006

13

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

3.5 Read Status Register.

The device contains a Status Register which may be read to find out whether read, program or erase operation is com-

pleted, and whether the program or erase operation is completed successfully. After writing 70h command to the com-

mand register, a read cycle outputs the content of the Status Register to the I/O pins on the falling edge of CE or RE,

whichever occurs last. This two line control allows the system to poll the progress of each device in multiple memory

connections even when R/B pins are common-wired. RE or CE does not need to be toggled for updated status. Refer

to Table 14 for specific Status Register definitions, and Figure 10 for specific timings requirements . The command reg-

ister remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read dur-

ing a random read cycle, the read command (00h) should be given before starting read cycles.

3.6 Read ID.

The device contains a product identification mode, initiated by writing 90h to the command register, followed by an

address input of 00h. Four read cycles sequentially output the 1st cycle (ADh), and 2nd cycle (the device code) and

3rd cycle ID, 4th cycle ID, respectively. The command register remains in Read ID mode until further commands are

issued to it. Figure 19 shows the operation sequence, while Tables 16 explain the byte meaning.

3.7 Reset.

The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state

during random read, program or erase mode, the reset operation will abort these operations. The contents of memory

cells being altered are no longer valid, as the data will be partially programmed or erased.

The command register is cleared to wait for the next command, and the Status Register is cleared to value E0h when

WP is high. Refer to table 14 for device status after reset operation. If the device is already in reset state a new reset

command will not be accepted by the command register. The R/B pin transitions to low for tRST after the Reset com-

mand is written.

Rev 0.3 / Nov. 2006

14

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

3.8 Cache program

Cache Program is an extension of Page Program, which is executed with 2112byte (X8 device) or 1056word (X16

device) data registers, and is available only within a block. Since the device has 1 page of cache memory, serial data

input may be executed while data stored in data register are programmed into memory cell. After writing the first set

of data up to 2112byte (X8 device) or 1056word (X16 device) into the selected cache registers, Cache Program com-

mand (15h) instead of actual Page Program (10h) is input to make cache registers free and to start internal program

operation. To transfer data from cache registers to data registers, the device remains in Busy state for a short period

of time (tCBSY) and has its cache registers ready for the next data-input while the internal programming gets started

with the data loaded into data registers. Read Status command (70h) may be issued to find out when cache registers

become ready by polling the Cache- Busy status bit (I/O 6). Pass/fail status of only the previous page is available

upon the return to Ready state.

When the next set of data is input with the Cache Program command, tCBSY is affected by the progress of pending

internal programming. The programming of the cache registers is initiated only when the pending program cycle is

finished and the data registers are available for the transfer of data from cache registers. The status bit (I/O5) for

internal Ready/Busy may be polled to identify the completion of internal programming.

If the system monitors the progress of programming only with R/B, the last page of the target programming sequence

must be programmed with actual Page Program command (10h). If the Cache Program command (15h) is used

instead, status bit (I/O5) must be polled to find out when the last programming is actually finished before starting

other operations such as read. Pass/fail status is available in two steps. I/O 1 returns with the status of the previous

page upon Ready or I/O6 status bit changing to "1", and later I/O 0 with the status of current page upon true Ready

(returning from internal programming) or I/O 5 status bit changing to "1". I/O 1 may be read together when I/O 0 is

checked. See Fig. 17 for more details.

NOTE : Since programming the last page does not employ caching, the program time has to be that of Page Program.

However, if the previous program cycle with the cache data has not finished, the actual program cycle of the last page

is initiated only after completion of the previous cycle, which can be expressed as the following formula.

tPROG=Program time for the last page + Program time for the (last-1)page

- (Program command cycle time + Last page data loading time)

Rev 0.3 / Nov. 2006

15

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

3.9 Cache Read

Cache read operation allows automatic download of consecutive pages, up to the whole device. Immediately after 1st

latency end, while user can start reading out data, device internally starts reading following page.

Start address of 1st page must be at page start (A<10:0>=00h) : in this way after 1st latency time (tr) , automatic

data download will be uninterrupted. In fact latency time is 25us, while download of a page require at least 100us for

x8 device (50us for x16 device).

Cache read operation command is like standard read, except for confirm code (30h for standard read, 31h for cache

read) user can check operation status using :

- R/B ( ‘0’ means latency ongoing, download not possible, ‘1’ means download of n page possible, even if device in

ternally is active on n+1 page

- Status register (SR<6> behave like R/B, SR<5> is ‘0’ when device is internally reading and ‘1’ when device is idle)

To exit cache read operation, a cache read exit command (34h) must be issued. This command can be given any time

(both device idle and reading).

If device is active (SR<5>=0) it will go idle within 5us, while if it is not active, device itself will go busy for a time

shorter then tRBSY before becoming again idle and ready to accept any further commands. Figure 21 describes how

to handle Cache Read through Status register .

If user reads last byte/word of the memory array, then he has to stop by giving a cache read exit command. In general,

if user wants to terminate a cache read, then he must give a cache read exit command (or reset command) before

starting any new operation.

Random data output is not available in cache read.

Cache read operation must be done only block by block if system needs to avoid reading also from invalid blocks.

Rev 0.3 / Nov. 2006

16

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

4. OTHER FEATURES

4.1 Data Protection for Power on/off Sequence

The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal

voltage detector disables all functions whenever Vcc is below about 1.1V (1.8V version). WP pin provides hardware

protection and is recommended to be kept at VIL during power-up and power-down. A recovery time of minimum 10us

is required before internal circuit gets ready for any command sequences as shown in Figure 25. The two-step com-

mand sequence for program/erase provides additional software protection.

If the power is dropped during the ready read/write/erase operation, Power protection function may not guaranteed

the data. Power protection function is only available during the power on/off sequence.

4.2 Ready/Busy.

The device has a Ready/Busy output that provides method of indicating the completion of a page program, erase,

copy-back, cache program and random read completion. The R/B pin is normally high and goes to low when the device

is busy (after a reset, read, program, erase operation). It returns to high when the P/E/R controller has finished the

operation. The pin is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up

resistor value is related to tr(R/B) and current drain during busy (Ibusy), an appropriate value can be obtained with

the following reference chart (Figure 26). Its value can be determined by the following guidance.

Rev 0.3 / Nov. 2006

17

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Parameter

Symbol

Min

Typ

Max

Unit

Valid Block Number

NVB

1004

1024

Blocks

Table 7: Valid Blocks Number

NOTE:

1. The 1st block is guaranteed to be a valid block up to 1K cycles with ECC. (1bit/528bytes)

Value

1.8V

Symbol

Parameter

Unit

Ambient Operating Temperature (Temperature Range Option 1)

Ambient Operating Temperature (Industrial Temperature Range)

Temperature Under Bias

0 to 70

℃

V

TA

-40 to 85

-50 to 125

-65 to 150

-0.6 to 4.6

TBIAS

TSTG

Storage Temperature

(2)

Input or Output Voltage

VIO

Vcc

Supply Voltage

V

Table 8: Absolute maximum ratings

NOTE:

1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute

Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of

the device at these or any other conditions above those indicated in the Operating sections of this specification is

not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.

2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.

Rev 0.3 / Nov. 2006

18

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

$ꢆꢁꢋaꢋ$ꢈ

$''5(66

5(*,67(5ꢀ

&2817(5

352*5$0

(5$6(

;

&21752//(5

+9ꢋ*(1(5$7,21

ꢃꢀꢊꢌꢅ0ELWꢅꢎꢅꢋꢊ0ELW

1$1'ꢅ)ODVK

0(025<ꢅ$55$<

'

(

&

2

'

(

5

$/(

&/(

:(

&(

:3

&200$1'

,17(5)$&(

/2*,&

5(

3$*(ꢋ%8))(5

<ꢋ'(&2'(5

&200$1'

5(*,67(5

'$7$

5(*,67(5

%8))(56

,2

Figure 5 : Block Diagram

Rev 0.3 / Nov. 2006

19

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

1.8Volt

Parameter

Symbol

Test Conditions

Unit

Min

Typ

Max

tRC=50ns

CE=VIL,

IOUT=0mA

Sequential

Read

ICC1

-

10

20

mA

Operating

Current

Program

Erase

ICC2

ICC3

-

10

20

mA

CE=VIH,

WP=0V/Vcc

Stand-by Current (TTL)

Stand-by Current (CMOS)

ICC4

-

1

mA

uA

CE=Vcc-0.2,

WP=0V/Vcc

ICC5

ILI

10

50

Input Leakage Current

Output Leakage Current

Input High Voltage

VIN=0 to Vcc (max)

-

uA

V

± 10

Vcc+0.3

Vccx0.2

-

ILO

VIH

VIL

VOUT =0 -to Vcc (max)

-

Vccx0.8

-0.3

Input Low Voltage

-

V

Output High Voltage Level

Output Low Voltage Leve

VOH

VOL

IOH=-100uA

IOL=100uA

Vcc-0.1

-

V

0.1

V

IOL

(R/B)

Output Low Current (R/B)

VOL=0.2V

3

4

-

mA

Table 9: DC and Operating Characteristics

Value

1.8Volt

0V to Vcc

5ns

Parameter

Input Pulse Levels

Input Rise and Fall Times

Input and Output Timing Levels

Output Load (1.7V - 1.95V)

Vcc / 2

1 TTL GATE and CL=30pF

Table 10: AC Conditions

Rev 0.3 / Nov. 2006

20

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Item

Input / Output Capacitance

Input Capacitance

Symbol

CI/O

Test Condition

VIL=0V

Min

Max

10

Unit

pF

-

CIN

VIN=0V

10

pF

Table 11: Pin Capacitance (TA=25C, F=1.0MHz)

Parameter

Symbol

tPROG

tCBSY

tRBSY

NOP

Min

Typ

Max

700

-

Unit

Program Time

-

200

us

Dummy Busy Time for Cache Program

Dummy Busy Time for Cache Read

3

5

-

us

Main Array

Spare Array

4

Cycles

ms

Number of partial Program Cycles in the same page

Block Erase Time

NOP

-

4

tBERS

2

3

Table 12: Program / Erase Characteristics

Rev 0.3 / Nov. 2006

21

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

1.8Volt

Parameter

Symbol

Unit

Min

25

Max

CLE Setup time

tCLS

tCLH

tCS

ns

us

ns

us

CLE Hold time

10

CE setup time

35

CE hold time

tCH

10

WE pulse width

tWP

tALS

tALH

25

ALE setup time

25

ALE hold time

10

(4)

Address to Data Loading

Data setup time

100

20

tADL

tDS

tDH

tWC

tWH

tR

Data hold time

10

Write Cycle time

45

WE High hold time

Data Transfer from Cell to register

ALE to RE Delay

15

25

tAR

10

20

25

CLE to RE Delay

tCLR

tRR

Ready to RE Low

RE Pulse Width

tRP

WE High to Busy

Read Cycle Time

tWB

tRC

100

50

RE Access Time

tREA

tRHZ

tCHZ

tREH

tIR

30

50

RE High to Output High Z

CE High to Output High Z

RE High Hold Time

Output High Z to RE low

CE Access Time

15

0

tCEA

tWHR

tOH

tRST

45

WE High to RE low

RE or CE High to Output Hold

60

10

(1)

Device Resetting Time (Read / Program / Erase)

5/10/500

(3)

Write Protection time

100

ns

tWW

Table 13: AC Timing Characteristics

NOTE:

1. If Reset Command (FFh) is written at Ready state, the device goes into Busy for maximum 5us

2. The time to Ready depends on the value of the pull-up resistor tied R/B pin.

3. Program / Erase Enable Operation : WP high to WE High.

Program / Erase Disable Operation : WP Low to WE High.

4. tADL is the time from the WE rising edge of final address cycle to the WE rising of first data cycle.

Rev 0.3 / Nov. 2006

22

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Pagae

Program

Block

Erase

Cache

Program

Cache

Read

IO

Read

CODING

0

1

2

3

4

Pass / Fail

Pass / Fail (N)

NA

Pass: ‘0’ Fail: ‘1’

NA

Pass / Fail (N-1)

Don’t care

NA

-

P/E/R

Controller Bit

P/E/R

Controller Bit

5

6

7

Ready/Busy

Write Protect

Ready/Busy

Write Protect

Ready/Busy

Write Protect

Active: ‘0’ Idle: ‘1’

Busy: ‘0’ Ready’: ‘1’

Cache Register

Free

Ready/Busy

Protected: ‘0’ Not

Protected: ‘1’

Write Protect

Table 14: Status Register Coding

DEVIIDENTIFIER CYCLE

DESCRIPTION

1st

Manufacturer Code

Device Identifier

2nd

Internal chip number, cell Type, Number of Simultaneously Programmed

pages.

3rd

4th

Page size, spare size, Block size, Organization

Table 15: Device Identifier Coding

1st cycle

2nd cycle

Part Number

Voltage Bus Width

3rd Code 4th Code

(Manufacture Code) (Device Code)

HY27SF081G2A

HY27SF161G2A

1.8V

x8

ADh

A1h

B1h

80h

15h

55h

x16

Table 16: Read ID Data Table

Rev 0.3 / Nov. 2006

23

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Description

IO7

IO6

IO5 IO4

IO3 IO2

IO1 IO0

1

2

4

0 0

0 1

1 0

1 1

Die / Package

String Type

Reserved

Single Level

2x Multi-level

Reserved

0 0

0 1

1 0

1 1

Reservedl

1

2

3

4

0 0

0 1

1 0

1 1

Number of

Simultaneously

Programmed Pages

Interleave Program

Between different dice

Not Support

Support

0

1

Not Support

Support

0

1

Write Cache

Table 17: 3rd Byte of Device Idendifier Description

Description

1KB

2KB

4KB

Reserved

IO7

IO6

IO5-4

IO3

IO2

IO1-0

0 0

0 1

1 0

1 1

Page Size

(Without Spare Area)

Spare Area Size

(Byte / 512 Byte)

8

16

0

1

50ns

30ns

25ns

Reserved

0

1

0

1

0

1

Serial Access Time

0 0

0 1

1 0

1 1

64KB

128KB

256KB

512KB

Block Size (Without

Spare Area)

X8

X16

0

1

Organization

Table 18: 4th Byte of Device Identifier Description

Rev 0.3 / Nov. 2006

24

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

W&/

6

W&/+

W&+

&/(

W&6

&(

W:3

:(

W$/6

W$/+

$/(

W'6

W'+

,ꢀ2ꢋ[

&RPPDQG

Figure 6: Command Latch Cycle

W&/6

W&6

&/(

&(

W:&

W:3

:(

W:+

W$/6

W$/+

W'+

W$/6

$/(

W'+

W'6

,ꢉ2[

&ROꢌꢋ$GGꢇ

&ROꢌꢋ$GGꢆ

5RZꢋ$GGꢇ

5RZꢋ$GGꢆ

Figure 7: Address Latch Cycle

Rev 0.3 / Nov. 2006

25

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

W&/+

W&+

&/(

&(

W:&

$/(

W$/6

W:3

:(

W:+

W'+

',1ꢀꢂ

W'6

',1ꢀILQDOꢃ

W'6

',1ꢀꢁ

,ꢀ2[

Figure 8. Input Data Latch Cycle

t

CEA

CE

t

CHZ*

t

REH

t

REA

t

REA

tREA

t

OH

t

RP

RE

t

RHZ

t

RHZ*

OH

t

I/Ox

Dout

t

RR

t

RC

R/B

Notes : Transition is measured ±±22mꢀ from steady state voltage with load.

This parameter is sampled and not 122% tested.

Figure 9: Sequential Out Cycle after Read (CLE=L, WE=H, ALE=L)

Rev 0.3 / Nov. 2006

26

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

tCLR

CLE

CE

tCLS

tCS

tCLH

tCH

tWP

WE

tCEA

t2H

tCHZ

tWHR

RE

t2H

tDH

tREA

tDS

72h

tIR

tRH=

I/Ox

Status Output

Figure 10: Status Read Cycle

W

&/5

&/(

&(

W

:&

:(

$/(

W

:%

W

$5

W

5+=

W

5

W

5&

5(

W

55

&ROꢅ$GGꢂ &ROꢅ$GGꢆ 5RZꢀ$GGꢂ 5RZꢀ$GGꢂ

&ROXPQꢀ$GGUHVV 5RZꢀ$GGUHVV

'RXWꢀ1

'RXWꢀ1ꢇ

'RXWꢀ0

ꢁꢁK

ꢄꢁK

,ꢀ2[

%XV\

5ꢀ'

Figure 11: Read Operation (Read One Page)

Rev 0.3 / Nov. 2006

27

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

&/(

&(

:(

W:%

W&+=

W$5

W2+

$/(

W5

W5&

5(

W55

ꢈꢈK

&ROꢌꢋ$GGꢇ &ROꢌꢋ$GGꢆ

&ROXPQꢋ$GGUHVV

5RZꢋ$GGꢇ 5RZꢋ$GGꢆ

5RZꢋ$GGUHVV

ꢅꢈK

'RXWꢋ1

'RXWꢋ1ꢍꢇ

'RXWꢋ1ꢍꢆ

,ꢉ2[

5ꢉ%

%XV\

Figure 12: Read Operation intercepted by CE

Rev 0.3 / Nov. 2006

28

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Figure 13 : Random Data output

Rev 0.3 / Nov. 2006

29

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

&/(

&(

W:&

:(

W:%

W352*

W$'/

$/(

5(

'LQ

1

'LQ

0

,ꢉ2[

&ROꢅꢀ$GGꢂ &ROꢅꢀ$GGꢆ 5RZꢀ$GGꢂ 5RZꢀ$GGꢆ

5RZꢀ$GGUHVV

ꢂꢁK

ꢉꢁK

,ꢊ2R

ꢈꢁK

6HULDOꢀ'DWD

5HDGꢀ6WDWXV

&RPPDQG

3URJUDP

ꢃꢀXSꢀWRꢀPꢀ%\WH

,QSXWꢀ&RPPDQG

&ROXPQꢀ$GGUHVV

&RPPDQG

6HULDOꢀ,QSXW

5ꢉ%

,ꢁ2R ꢂꢀ6XFFHVVIXOꢀ3URJUDP

,ꢁ2R ꢃꢀ(UURUꢀLQꢀ3URJUDP

;ꢄꢀGHYLFHꢀꢅꢀPꢀ ꢀꢆꢃꢃꢆE\WH

;ꢃꢇꢀGHYLFHꢀꢅꢀPꢀ ꢀꢃꢂꢈꢇZRUG

1RWHꢀꢅꢀW$'/ꢀLVꢀWKHꢀWLPHꢀIURPꢀWKHꢀ:(ꢀULVLQJꢀHGJHꢀRIꢀILQDOꢀDGGUHVVꢀF\FOHꢀWRꢀWKHꢀ:(ꢀULVLQJꢀHGJHꢀRIꢀILUVWꢀGDWDꢀF\FOHꢉ

Figure 14: Page Program Operation

Rev 0.3 / Nov. 2006

30

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Figure 15 : Random Data In

Rev 0.3 / Nov. 2006

31

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Figure 16 : Copy Back Program

Rev 0.3 / Nov. 2006

32

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Figure 17 : Cache Program

Rev 0.3 / Nov. 2006

33

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

&/(

&(

W:&

:(

W:%

W%(56

$/(

5(

ꢂꢈK

'ꢈK

,ꢉ2

[

5RZꢋ$GGꢇ5RZꢋ$GGꢆ

5RZꢋ$GGUHVV

ꢁꢈK

,ꢀ2ꢈ

5ꢉ%

%86<

$XWRꢋ%ORFNꢋ(UDVHꢋ6HWXS

&RPPDQG

(UDVHꢋ&RPPDQG

5HDGꢋ6WDWXV ,ꢀ2ꢈ ꢈꢋ6XFFHVVIXOꢋ(UDVH

&RPPDQG

,ꢀ2ꢈ ꢇꢋ(UURUꢋLQꢋ(UDVH

Figure 18: Block Erase Operation (Erase One Block)

&/(

&(

:(

W$5ꢋꢋ

$/(

5(

W5($ꢋꢋ

ꢉꢈK

ꢇꢃK

$ꢇK

ꢊꢈK

ꢈꢈK

$'K

,ꢀ2ꢋ[

5HDGꢋ,'ꢋ&RPPDQG $GGUHVVꢋꢇꢋF\FOH

ꢇVWꢋF\FOH

ꢆQGꢋF\FOH

ꢅUGꢋF\FOH

ꢄWKꢋF\FOH

Figure 19: Read ID Operation

Rev 0.3 / Nov. 2006

34

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

&/(

$/(

:(ꢊ

'ꢈ

'ꢇ 'ꢆ 'ꢅ 'ꢄ

'ꢁK $GGꢂ $GGꢆ $GGꢄ $GGꢋ $GGꢌ ꢄꢂK

ꢆꢇꢇꢇ

'ꢈ 'ꢇ 'ꢆ 'ꢅ 'ꢄ

ꢆꢇꢇꢇ

'ꢈ

'ꢇ 'ꢆ

ꢀꢁV

5(ꢀ

5HDGꢋꢅUGꢋSDJH

5HDGꢋꢄWKꢋSDJH

5HDGꢋꢇVWꢋSDJH 5HDGꢋꢆQGꢋSDJH

,GOH

,QWHUQDOꢀRSHUDWLRQ

ꢀꢁV

ꢂꢃꢃV

6WDWXVꢀ5HJLVWHU

65ꢀꢋꢀꢈꢅꢇꢀ!

ꢂꢂ

ꢂꢃ

ꢃꢃ

ꢂꢃ

ꢃꢃ

ꢂꢃ

Figure 20: start address at page start :after 1st latency uninterrupted data flow

&/(

8VHUꢀFDQ

$/(

KHUHꢀILQLVK

UHDGLQJꢀ1

SDJH

:(ꢀꢀ

'ꢁ 'ꢂ 'ꢆ 'ꢄ 'ꢋ

ꢆꢂꢂꢂ 'ꢁ 'ꢂ ꢄꢋK

1ꢌꢆꢀSDJH

FDQQRWꢀEH

UHDG

QꢇꢂꢀSDJH

QꢀSDJH

5(ꢀꢀꢀ

ꢌVꢀꢍW5%6<

ꢎ

5ꢁ%ꢀꢀꢀ

5HDGꢀQꢇꢂꢀSDJH

ꢆꢌV

,GOH

,QWHUUXSWHG

5HDGꢀ

QꢇꢆꢀSDJH

,QWHUQDO

RSHUDWLRQ

ꢂꢁꢁV

6WDWXVꢀ5HJLVWHU

65ꢀꢋꢀꢈꢅꢇꢀ!

ꢁꢂ

ꢂꢂ

ꢁꢂ

ꢂꢂ

Figure 21: exit from cache read in 5us when device internally is reading

Rev 0.3 / Nov. 2006

35

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

System Interface Using CE don’t care

To simplify system interface, CE may be deasserted during data loading or sequential data-reading as shown below.

So, it is possible to connect NAND Flash to a microporcessor. The only function that was removed from standard NAND

Flash to make CE don’t care read operation was disabling of the automatic sequential read function.

&/(

&(ꢋGRQ¶WꢎFDUH

&(

:(

$/(

ꢉꢈK

6WDUWꢋ$GGꢌꢐꢄ&\FOHꢑ

'DWDꢋ,QSXW

ꢇꢈK

,ꢉ2[

Figure 22: Program Operation with CE don’t-care.

&/(

&(

,IꢋVHTXHQWLDOꢋURZꢋUHDGꢋHQDEOHGꢓ

&(ꢋPXVWꢋEHꢋKHOGꢋORZꢋGXULQJꢋW5ꢌ

&(ꢋGRQ¶WꢎFDUH

5(

$/(

5ꢀ%

W5

:(

,ꢀ2[

ꢈꢈK

6WDUWꢋ$GGꢌꢐꢄ&\FOHꢑ

ꢅꢈK

'DWDꢋ2XWSXWꢐVHTXHQWLDOꢑ

Figure 23: Read Operation with CE don’t-care.

Rev 0.3 / Nov. 2006

36

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

:(

$/(

&/(

5(

,2ꢁꢏꢀ

5ꢉ%

))K

W

567

Figure 24: Reset Operation

9FF

97+

W

:3

:(

ꢃꢂXV

Figure 25: Power On and Data Protection Timing

VTH = 1.5 Volt for 1.8 Volt Supply devices

Rev 0.3 / Nov. 2006

37

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

5S

LEXV\

9FF

5HDG\

9FF

5ꢁ%

ꢆꢌꢈ9

RSHQꢀGUDLQꢀRXWSXW

ꢈꢌꢉ9

%XV\

WI

WU

*1'

'HYLFH

ꢋꢋ)LJꢌꢋ5SꢋYVꢋWUꢓꢋWIꢋꢒꢋ5SꢋYVꢋLEXV\

#ꢀ9FFꢀ ꢀꢃꢉꢄ9ꢍꢀ7Dꢀ ꢀꢆꢈ&ꢍꢀ& ꢎꢂS)

/

LEXV\

ꢅꢈꢈQ

ꢆꢈꢈQ

ꢇꢈꢈQ

ꢅP

ꢇꢌꢁ

ꢆP

ꢇP

ꢇꢆꢈ

ꢈꢌꢉꢃ

ꢂꢈ

WU

WI

ꢊꢈ

ꢅꢈ

ꢈꢌꢃꢁ

ꢈꢌꢄꢅ

ꢇꢌꢁ

ꢆN

ꢇꢌꢁ

ꢇN

ꢅN

ꢄN

5SꢋꢐRKPꢑ

5SꢋYDOXHꢋJXLGHQFH

9FFꢋꢐ0D[ꢌꢑꢋꢎꢋ92/ꢋꢐ0D[ꢌꢑ

ꢇꢌꢉꢃ9

5SꢋꢐPLQꢑꢋ

,2/ꢋꢍꢋ,

/

ꢅP$ꢋꢍꢋ,/

ZKHUHꢋ,/ꢋLVꢋWKHꢋVXPꢋRIꢋWKHꢋLQSXWꢋFXUUQWVꢋRIꢋDOOꢋGHYLFHVꢋWLHGꢋWRꢋWKHꢋ5ꢀ%ꢋSLQꢌ

5SꢐPD[ꢑꢋLVꢋGHWHUPLQHGꢋE\ꢋPD[LPXPꢋSHUPLVVLEOHꢋOLPLWꢋRIꢋWU

Figure 26: Ready/Busy Pin electrical specifications

Rev 0.3 / Nov. 2006

38

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Bad Block Management

Devices with Bad Blocks have the same quality level and the same AC and DC characteristics as devices where all the

blocks are valid. A Bad Block does not affect the performance of valid blocks because it is isolated from the bit line and

common source line by a select transistor. The devices are supplied with all the locations inside valid blocks

erased(FFh).

The Bad Block Information is written prior to shipping. Any block where the 1st Byte/ 1st Word in the spare area of the

1st or 2nd page (if the 1st page is Bad) does not contain FFh is a Bad Block. The Bad Block Information must be read

before any erase is attempted as the Bad Block Information may be erased. For the system to be able to recognize the

Bad Blocks based on the original information it is recommended to create a Bad Block table following the flowchart

shown in Figure 27. The 1st block, which is placed on 00h block address is guaranteed to be a valid block.

Block Replacement

Over the lifetime of the device additional Bad Blocks may develop. In this case the block has to be replaced by copying

the data to a valid block. These additional Bad Blocks can be identified as attempts to program or erase them will give

errors in the Status Register.

As the failure of a page program operation does not affect the data in other pages in the same block, the block can be

replaced by re-programming the current data and copying the rest of the replaced block to an available valid block.

The Copy Back Program command can be used to copy the data to a valid block.

See the “Copy Back Program” section for more details.

Refer to Table 19 for the recommended procedure to follow if an error occurs during an operation.

Operation

Erase

Recommended Procedure

Block Replacement

Program

Read

Block Replacement or ECC (with 1bit/528byte)

ECC (with 1bit/528byte)

Table 19: Block Failure

67$57

%ORFNꢋ$GGUHVV

%ORFNꢋꢈ

,QFUHPHQW

%ORFNꢋ$GGUHVV

8SGDWH

%DGꢋ%ORFNꢋWDEOH

'DWD

))K"

1R

<HV

/DVW

EORFN"

<HV

(1'

Figure 27: Bad Block Management Flowchart

Rev 0.3 / Nov. 2006

39

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Write Protect Operation

The Erase and Program Operations are automatically reset when WP goes Low (tWW = 100ns, min). The operations

are enabled and disabled as follows (Figure 28~31)

:(

W

::

ꢄꢂK

,ꢁ2[

ꢃꢂK

5ꢁ%

Figure 28: Enable Programming

:(

W

::

ꢄꢂK

ꢃꢂK

,ꢁ2[

5ꢁ%

Figure 29: Disable Programming

Rev 0.3 / Nov. 2006

40

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

:(

W

::

ꢇꢂK

'ꢂK

,ꢁ2[

5ꢁ%

Figure 30: Enable Erasing

:(

W

::

ꢇꢂK

,ꢁ2[

'ꢂK

5ꢁ%

Figure 31: Disable Erasing

Rev 0.3 / Nov. 2006

41

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

ꢏꢄ

H

$ꢆ

$

'

%

/

Į

$ꢃ

ꢆꢏ

ꢆꢈ

',(

(ꢃ

(

&

&3

Figure 32: 48pin-TSOP1, 12 x 20mm, Package Outline

millimeters

Symbol

Min

Typ

Max

1.200

0.150

1.030

0.250

0.200

0.100

12.120

20.100

18.500

A

A1

A2

B

0.050

0.980

0.170

0.100

C

CP

D

11.910

19.900

18.300

12.000

20.000

18.400

0.500

E

E1

e

L

0.500

0

0.680

5

alpha

Table 20: 48pin-TSOP1, 12 x 20mm, Package Mechanical Data

Rev 0.3 / Nov. 2006

42

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

$

$ꢊ

(

$ꢃ

'

Į

&3

&ꢃ

Figure 33. 48pin-USOP1, 12 x 17mm, Package Outline

millimeters

Symbol

Min

Typ

Max

0.650

0.080

0.570

0.230

0.175

0.750

0.100

17.100

12.120

15.500

A

A1

A2

B

0

0.050

0.520

0.160

0.100

0.650

0.470

0.130

0.065

0.450

C

C1

CP

D

16.900

11.910

15.300

17.000

12.000

15.400

0.500

D1

E

e

alpha

0

8

Table 21: 48pin-USOP1, 12 x 17mm, Package Mechanical Data

Rev 0.3 / Nov. 2006

43

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

'

'ꢆ

'ꢃ

6'

)'ꢃ

)'

H

6(

(

(ꢆ (ꢃ

)(

)(ꢃ

%$//ꢀ³FS

$

´

H

E

$ꢆ

$ꢃ

Figure 34. 63-ball FBGA - 9 x 11 ball array 0.8mm pitch, Pakage Outline

NOTE: Drawing is not to scale.

Millimeters

Typ

Symbol

Min

0.80

0.25

0.55

0.40

8.90

Max

1.00

0.35

0.65

0.50

9.10

A

A1

A2

b

0.90

0.30

0.60

0.45

D

9.00

D1

D2

E

E1

E2

e

4.00

7.20

11.00

5.60

8.80

10.90

11.10

0.80

FD

FD1

FE

FE1

SD

SE

2.50

0.90

2.70

1.10

0.40

Table 22: 63-ball FBGA - 9 x 11 ball array 0.8mm pitch, Pakage Mechanical Data

Rev 0.3 / Nov. 2006

44

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

MARKING INFORMATION - TSOP1/USOP

Packag

Marking Exam ple

K

G

O

2

R

A

TSOP1

/

H

x

Y

x

2

x

7

x

S

F

x

1

USOP

Y

W

x

- hynix

- KOR

: Hynix Symbol

: Origin Country

- HY27SFxx1G2A xxxx

HY: Hynix

: Part Number

27: NAND Flash

S: Power Supply

F: Classification

xx: Bit Organization

1G: Density

: S(1.8V)

: Single Level Cell+Single Die+Large Block

: 08(x8), 16(x16)

: 1Gbit

: 1nCE & 1R/nB; Sequential Row Read Disable

: 2nd Generation

2: Mode

A: Version

: T(48-TSOP1), S(48-USOP)

: Blank(Normal), P(Lead Free)

: C(0℃ ~70℃ ), I(-40℃ ~85℃ )

: B(Included Bad Block), S(1~5 Bad Block),

P(All Good Block)

x: Package Type

x: Package Material

x: Operating Temperature

x: Bad Block

- Y: Year (ex: 5=year 2005, 06= year 2006)

- ww: Work Week (ex: 12= work week 12)

- xx: Process Code

Note

- Capital Letter

- Sm all Letter

: Fixed Item

: Non-fixed Item

Rev 0.3 / Nov. 2006

45

HY27SF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

MARKING INFORMATION - FBGA

Packag

Marking Exam ple

K

G

O

2

R

A

H

x

Y

x

2

x

7

x

S

F

0

8

1

FBGA

Y

W

x

- hynix

- KOR

: Hynix Symbol

: Origin Country

- HY27SFxx1G2A xxxx

HY: Hynix

: Part Number

27: NAND Flash

S: Power Supply

F: Classification

08: Bit Organization

1G: Density

: S(1.8V)

: Single Level Cell+Single Die+Large Block

: 08(x8)

: 1Gbit

: 1nCE & 1R/nB; Sequential Row Read Disable

: 2nd Generation

2: Mode

A: Version

: F(63FBGA)

x: Package Type

: Blank(Normal), P(Lead Free)

: C(0℃ ~70℃ ), I(-40℃ ~85℃ )

: B(Included Bad Block), S(1~5 Bad Block),

P(All Good Block)

x: Package Material

x: Operating Temperature

x: Bad Block

- Y: Year (ex: 5=year 2005, 06= year 2006)

- ww: Work Week (ex: 12= work week 12)

- xx: Process Code

Note

- Capital Letter

- Sm all Letter

: Fixed Item

: Non-fixed Item

Rev 0.3 / Nov. 2006

46


型号：	HY27SF161G2A-TPIB
厂家：	HYNIX SEMICONDUCTOR
描述：	Flash, 64MX16, 30ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48 ISM频段光电二极管内存集成电路
文件：	总46页 (文件大小：388K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HY27SF161G2A-TPIB [HYNIX]

相关型号：

HY27SF161G2A-TPIP

HY27SF161G2A-TPIS

HY27SF161G2M

HY27SF161G2M-FP

HY27SF161G2M-SCP

HY27SF161G2M-SES

HY27SF161G2M-SPCB

HY27SF161G2M-SPEB

HY27SF161G2M-SPEP

HY27SF161G2M-SPES

HY27SF161G2M-SPIB

HY27SF161G2M-SPIS