HY57V643220DLT-7I [HYNIX]
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86;型号: | HY57V643220DLT-7I |
厂家: | HYNIX SEMICONDUCTOR |
描述: | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 时钟 动态存储器 光电二极管 内存集成电路 |
文件: | 总13页 (文件大小:81K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HY57V643220D(L/S)T(P)-xI Series
4Banks x 512K x 32bits Synchronous DRAM
Document Title
4Bank x 512K x 32bits Synchronous DRAM
Revision History
Revision
History
Draft Date
Remark
No.
0.1
0.2
Initial Draft
June. 2004
July 2004
Preliminary
Removed Preliminary
1. Updated Output Load Capacitance for Access Time Measurement CL = 30pF in
AC OPERATING TEST CONDITION
2. Updated the tolerance zone of the leads and the description of the package type
in PACKAGE DIMENSION
0.3
0.4
Sep. 2004
Sep. 2005
1.Corrected : Lead range tolerance (Page : 13)
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.4 / Sep. 2005
1
HY57V643220D(L/S)T(P)-xI Series
4Banks x 512K x 32bits Synchronous DRAM
DESCRIPTION
The Hynix HY57V643220D(L/S)T(P)-xI series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications
which require wide data I/O and high bandwidth. HY57V643220D(L/S)T(P)-xI is organized as 4banks of 524,228x32.
HY57V643220D(L/S)T(P)-xI is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs
are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All
input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated
by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A burst of
read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst
read or write command on any cycle. (This pipelined design is not restricted by a '2N' rule)
FEATURES
•
•
•
Voltage : VDD, VDDQ 3.3V supply voltage
•
•
•
Auto refresh and self refresh
All device pins are compatible with LVTTL interface
4096 Refresh cycles / 64ms
JEDEC standard 400mil 86pin TSOP-II with 0.5mm of pin
pitch
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
Burst Read Single Write operation
•
All inputs and outputs referenced to positive edge of sys-
tem clock
•
•
Data mask function by DQM 0, 1, 2 and DQM 3
Internal four banks operation
•
•
ORDERING INFORMATION
Clock
Frequency
Part No.
Organization
Interface
Package
HY57V643220D(L/S)T(P)-45I6)
HY57V643220D(L/S)T(P)-5I6)
HY57V643220D(L/S)T(P)-55I6)
HY57V643220D(L/S)T(P)-6I6)
HY57V643220D(L/S)T(P)-7I6)
222MHz
200MHz
183MHz
166MHz
143MHz
4Banks x 512Kbits x32
LVTTL
86pin TSOP-II
Note
1. HY57V643220DT(P)-xI
2. HY57V643220DLT(P)-xI
3. HY57V643220DST(P)-xI
4. HY57V643220D(L/S)T-xI
5. HY57V643220D(L/S)TP-xI
Series : Normal Power
Series : Low Power
Series : Super Low Power
Series : Leaded
Series : Lead Free
6. I : Industrial Temperature (-40oC ~ 85oC)
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.4 / Sep. 2005
2
HY57V643220D(L/S)T(P)-xI Series
4Banks x 512K x 32bits Synchronous DRAM
86PIN TSOP II CONFIGURATION
1
2
3
86
85
84
VSS
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
VDDQ
DQ10
DQ9
VDDQ
DQ8
NC
DQ5
DQ6
VSSQ
DQ7
NC
VSS
DQM1
NC
VDD
DQM0
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
NC
CLK
CKE
A9
A8
A7
A6
86Pin TSOP II
400Mil x 875mil
0.5mm Pin Pitch
67
66
65
20
21
22
A5
A4
A0
A1
A3
DQM3
VSS
NC
A2
DQM2
VDD
NC
DQ31
VDDQ
DQ30
DQ29
VSSQ
DQ28
DQ27
VDDQ
DQ26
DQ25
DQ16
VSSQ
DQ17
DQ18
VDDQ
DQ19
DQ20
VSSQ
DQ21
DQ22
VSSQ
DQ24
VSS
VDDQ
DQ23
VDD
41
42
43
46
45
44
Rev. 0.4 / Sep. 2005
3
HY57V643220D(L/S)T(P)-xI Series
4Banks x 512K x 32bits Synchronous DRAM
Pin FUNCTION DESCRIPTIONS
Pin
Pin Name
DESCRIPTION
The system clock input. All other inputs are registered to the SDRAM on the
rising edge of CLK.
CLK
Clock
Controls internal clock signal and when deactivated, the SDRAM will be one
of the states among power down, suspend or self refresh
CKE
CS
Clock Enable
Chip Select
Enables or disables all inputs except CLK, CKE and DQM
Selects bank to be activated during RAS activity
Selects bank to be read/written during CAS activity
BA0, BA1
A0 ~ A10
Bank Address
Row Address : RA0 ~ RA10, Column Address : CA0 ~ CA7
Auto-precharge flag : A10
Address
Row Address Strobe,
Column Address Strobe,
Write Enable
RAS, CAS and WE define the operation
Refer function truth table for details
RAS, CAS, WE
DQM0~3
DQ0 ~ DQ31
VDD/VSS
VDDQ/VSSQ
NC
Data Input/Output Mask
Data Input/Output
Controls output buffers in read mode and masks input data in write mode
Multiplexed data input / output pin
Power Supply/Ground
Data Output Power/Ground
No Connection
Power supply for internal circuits and input buffers
Power supply for output buffers
No connection
Rev. 0.4 / Sep. 2005
4
HY57V643220D(L/S)T(P)-xI Series
4Banks x 512K x 32bits Synchronous DRAM
FUNCTIONAL BLOCK DIAGRAM
512Kbit x 4banks x 32 I/O Synchronous DRAM
Internal Row
Counter
Self refresh
logic & timer
512Kx32 BANK 3
512Kx32 BANK 2
512Kx32 BANK 1
512Kx32 BANK 0
CLK
Row
Pre
Decoder
Row Active
CKE
CS
DQ0
RAS
CAS
Refresh
Memory
Cell
Array
Column Active
Column
Pre
WE
Decoder
DQ31
DQM0~3
Y-Decoder
Column Add
Counter
Bank Select
Address
Register
A0
A1
Burst
Counter
Pipe Line
Control
A10
BA1
BA0
CAS Latency
Mode Register
Data Out Control
Rev. 0.4 / Sep. 2005
5
HY57V643220D(L/S)T(P)-xI Series
4Banks x 512K x 32bits Synchronous DRAM
BASIC FUNCTIONAL DESCRIPTION
Mode Register
BA1
0
BA0
0
A11
0
A10
0
A9
A8
0
A7
0
A6
A5
A4
A3
BT
A2
A1
A0
OP Code
CAS Latency
Burst Length
OP Code
A9
0
Write Mode
Burst Read and Burst Write
Burst Read and Single Write
Burst Type
1
A3
0
Burst Type
Sequential
Interleave
1
CAS Latency
Burst Length
A6
0
A5
0
A4
0
CAS Latency
R e s e r v e d
1
Burst Length
A2
A1
A0
A3 = 0
A3=1
0
0
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
1
2
1
2
4
8
0
1
0
2
0
1
1
3
4
1
0
0
Reserved
R e s e r v e d
R e s e r v e d
Reserved
8
1
0
1
Reserved
Reserved
Reserved
Full Page
Reserved
Reserved
Reserved
Reserved
1
1
0
1
1
1
Rev. 0.4 / Sep. 2005
6
HY57V643220D(L/S)T(P)-xI Series
4Banks x 512K x 32bits Synchronous DRAM
ABSOLUTE MAXIMUM RATING
Parameter
Symbol
Rating
Unit
oC
Ambient Temperature
TA
-40 ~ 85
oC
V
Storage Temperature
TSTG
VIN, VOUT
VDD
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
-1.0 ~ 4.6
50
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Voltage on VDDQ relative to VSS
Short Circuit Output Current
Power Dissipation
V
VDDQ
IOS
V
mA
W
PD
1
Soldering Temperature . Time
260 . 10
oC . Sec
TSOLDER
DC OPERATING CONDITION (TA= -40 to 85oC )
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
VDD, VDDQ
VIH
Min
3.0
Typ
3.3
3.3
-
Max
Unit
Note
1
3.6
VDDQ+0.3
0.8
V
V
V
2.0
1, 2
1, 3
VIL
-0.3
Note : 1. All voltages are referenced to VSS = 0V
2. VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.
3. VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration
AC OPERATING TEST CONDITION (TA= -40 to 85 oC, VDD=3.3±0.3V, VSS=0V)
Parameter
AC Input High/Low Level Voltage
Symbol
VIH / VIL
Vtrip
Value
2.4/0.4
1.4
Unit
Note
V
V
Input Timing Measurement Reference Level Voltage
Input Rise/Fall Time
tR / tF
Voutref
CL
1
ns
V
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
1.4
30
pF
o
CAPACITANCE (TA= -40 to 85 C, f=1MHz, VDD=3.3V)
Parameter
Pin
Symbol
Min
Max
Unit
CLK
CI1
2.5
3.5
pF
Input capacitance
A0 ~ A10, BA0, BA1, CKE, CS, RAS, CAS, WE,
DQM 0~3
CI2
2.5
4
3.8
6.5
pF
pF
Data input / output capacitance
DQ0 ~ DQ31
CI/O
Rev. 0.4 / Sep. 2005
7
HY57V643220D(L/S)T(P)-xI Series
4Banks x 512K x 32bits Synchronous DRAM
Note 1.
Vtt=1.4V
Vtt=1.4V
RT=500 Ω
RT=50 Ω
Output
Z0 = 50Ω
Output
30pF
30pF
DC Output Load Circuit
AC Output Load Circuit
o
DC CHARACTERRISTICS I (TA= -40 to 85 C)
Parameter
Symbol
Min
Max
Unit
Note
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
ILI
ILO
-1
-1
2.4
-
1
1
uA
uA
V
1
2
VOH
VOL
-
IOH = -2mA
IOL = +2mA
0.4
V
Note :
1. VIN = 0 to 3.6V, All other balls are not tested under VIN =0V
2. DOUT is disabled, VOUT=0 to 3.6
Rev. 0.4 / Sep. 2005
8
HY57V643220D(L/S)T(P)-xI Series
4Banks x 512K x 32bits Synchronous DRAM
o
DC CHARACTERISTICS II (TA= -40 to 85 C)
Speed
55
Sym-
bol
Parameter
Test Condition
Unit Note
45
5
6
7
Burst length=1, One bank active
tRC ≥ tRC(min), IOL=0mA
Operating Current
IDD1
220
200
190
180
170
mA
1
IDD2P CKE ≤ VIL(max), tCK = 15ns
IDD2PS CKE ≤ VIL(max), tCK = ∞
2
2
mA
mA
Precharge Standby Current in
Power Down Mode
CKE ≥ VIH(min), CS ≥ VIH(min), tCK =
15ns
IDD2N Input signals are changed one time dur-
ing 2clks.
17
Precharge Standby Current
in Non Power Down Mode
mA
mA
All other pins ≥ VDD-0.2V or ≤ 0.2V
CKE ≥ VIH(min), tCK = ∞
IDD2NS
12
Input signals are stable.
IDD3P CKE ≤ VIL(max), tCK = 15ns
IDD3PS CKE ≤ VIL(max), tCK = ∞
3
3
Active Standby Current
in Power Down Mode
CKE ≥ VIH(min), CS ≥ VIH(min), tCK =
15ns
IDD3N Input signals are changed one time dur-
ing 2clks.
40
Active Standby Current
in Non Power Down Mode
mA
mA
All other pins ≥ VDD-0.2V or ≤ 0.2V
CKE ≥ VIH(min), tCK = ∞
IDD3NS
30
Input signals are stable.
tCK ≥ tCK(min), IOL=0mA
All banks active
Burst Mode Operating Current IDD4
CL=3
290
260
280
250
260
240
220
210
210
1
Auto Refresh Current
IDD5
tRC ≥ tRC(min), All banks active
235
2
mA
mA
mA
2
3
4
Normal
Low Power
0.8
Self Refresh Current
IDD6
CKE ≤ 0.2V
Super Low
Power
450
uA
5
Note :
1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open
2. Min. of tRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3. HY57V643220DT(P)-xI Series : Normal Power
4. HY57V643220DLT(P)-xI Series : Low Power
5. HY57V643220DST(P)-xI Series : Super Low Power
Rev. 0.4 / Sep. 2005
9
HY57V643220D(L/S)T(P)-xI Series
4Banks x 512K x 32bits Synchronous DRAM
AC CHARACTERISTICS I (AC operating conditions unless otherwise noted)
45
5
55
6
7
Parameter
Symbol
Unit Note
Min Max Min Max Min Max Min Max Min Max
CAS
Latency=3
tCK3
tCK2
4.5
10
5.0
10
5.5
10
6.0
10
7.0
10
ns
ns
System Clock
Cycle Time
1000
1000
1000
1000
1000
CAS
Latency=2
Clock High Pulse Width
Clock Low Pulse Width
CAS
tCHW
tCLW
1.75
1.75
-
-
2.0
2.0
-
-
2.25
2.25
-
-
2.5
2.5
-
-
3.0
3.0
-
-
ns
ns
1
1
tAC3
tAC2
-
-
4.5
6.0
-
-
4.5
6.0
-
-
5.0
6.0
-
-
5.5
6.0
-
-
5.5
6.0
ns
ns
Latency=3
Access Time
From Clock
2
CAS
Latency=2
Data-out Hold Time
Data-Input Setup Time
Data-Input Hold Time
Address Setup Time
Address Hold Time
CKE Setup Time
tOH
tDS
tDH
tAS
1.5
1.3
0.8
1.3
0.8
1.3
0.8
1.3
0.8
-
-
-
-
-
-
-
-
-
1.5
1.5
1.0
1.5
1.0
1.5
1.0
1.5
1.0
-
-
-
-
-
-
-
-
-
2.0
1.5
1.0
1.5
1.0
1.5
1.0
1.5
1.0
-
-
-
-
-
-
-
-
-
2.0
1.5
1.0
1.5
1.0
1.5
1.0
1.5
1.0
-
-
-
-
-
-
-
-
-
2.0
1.75
1.0
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
1
1
1
1
1
1
1
1
1.75
1.0
tAH
tCKS
tCKH
tCS
1.75
1.0
CKE Hold Time
Command Setup Time
Command Hold Time
1.75
1.0
tCH
CLK to Data Output in
Low-Z Time
tOLZ
1.0
-
1.0
-
1.0
-
1.0
-
1.0
-
ns
ns
ns
CAS
Latency=3
tOHZ3
tOHZ2
-
-
4.0
6.0
-
-
4.5
6.0
-
-
5.0
6.0
-
-
5.5
6.0
-
-
5.5
6.0
CLK to
Data Output
in High-Z Time
CAS
Latency=2
Note :
1. Assume tR / tF (input rise and fall time) is 1ns. If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter.
2. Access time to be measured with input signals of 1V/ns edge rate, from 0.8V to 2.0V. If tR > 1ns,
then (tR/2-0.5)ns should be added to the parameter.
Rev. 0.4 / Sep. 2005
10
HY57V643220D(L/S)T(P)-xI Series
4Banks x 512K x 32bits Synchronous DRAM
AC CHARACTERISTICS II (AC operating conditions unless otherwise noted)
45
5
55
6
7
Sym-
bol
Parameter
Unit Note
Min Max Min Max Min Max Min Max Min Max
RAS Cycle Time
Operation
tRC
58.5
58.5
18
-
-
-
55
55
15
-
-
-
55
55
-
-
-
60
60
18
42
18
-
63
63
20
42
20
-
-
-
ns
ns
ns
RAS Cycle Time
Auto Refresh
tRRC
tRCD
tRAS
tRP
-
RAS to CAS Delay
RAS Active Time
RAS Precharge Time
16.5
-
100K
-
40.5 100K 38.7 100K 38.7 100K
100K ns
18
9
-
-
15
10
-
-
16.5
11
-
-
-
-
ns
ns
RAS to RAS Bank Active
Delay
tRRD
tCCD
12
-
14
CAS to CAS Delay
1
0
-
-
-
1
0
-
-
-
1
0
-
-
-
1
0
1
-
-
-
1
0
1
-
-
-
CLK
CLK
CLK
Write Command to Data-In Delay tWTL
Data-in to Precharge Command
Data-In to Active Command
DQM to Data-Out Hi-Z
DQM to Data-In Mask
MRS to New Command
CAS
tDPL
TBD
TBD
TBD
tDAL
tDQZ
tDQM
tMRD
tDPL + tRP
2
0
2
-
-
-
2
0
2
-
-
-
2
0
2
-
-
-
2
0
2
-
-
-
2
0
2
-
-
-
CLK
CLK
CLK
tPROZ3
tPROZ2
3
-
-
-
3
2
-
-
3
2
-
-
3
2
-
-
3
2
-
-
CLK
CLK
Latency=3
Precharge to Data
Output High-Z
CAS
Latency=2
Power Down Exit Time
Self Refresh Exit Time
Refresh Time
tDPE
tSRE
tREF
1
1
-
-
-
1
1
-
-
-
1
1
-
-
-
1
1
-
-
-
1
1
-
-
-
CLK
CLK
ms
1
64
64
64
64
64
Note :
1. A new command can be given tRC after self refresh exit.
Rev. 0.4 / Sep. 2005
11
HY57V643220D(L/S)T(P)-xI Series
4Banks x 512K x 32bits Synchronous DRAM
COMMAND TRUTH TABLE
Command
CKEn-1
CKEn
CS
L
RAS
CAS
L
WE
L
DQM
ADDR
A10/AP
BA
Note
Mode Register Set
H
H
H
H
X
L
X
H
L
X
OP code
H
L
X
X
No Operation
X
X
X
X
X
X
X
H
H
Bank Active
L
H
H
RA
V
V
Read
L
H
L
L
L
H
H
L
L
L
H
L
CA
CA
X
Read with Autoprecharge
Write
H
H
X
X
X
V
Write with Autoprecharge
Precharge All Banks
Precharge selected Bank
Burst Stop
H
H
L
X
V
X
X
L
L
H
H
L
L
H
H
H
H
X
X
V
X
X
DQM
X
Auto Refresh
H
X
L
L
L
L
L
L
H
L
X
A9 ball High
MRS
Mode
Burst-Read-Single-WRITE
H
H
L
X
X
(Other balls OP code)
Entry
L
H
L
L
X
H
X
H
X
H
X
V
L
X
H
X
H
X
H
X
V
H
X
H
X
H
X
H
X
V
Self Refresh1
Exit
X
L
H
L
H
L
X
X
X
H
L
Entry
Precharge
power down
X
X
H
L
Exit
H
H
L
Entry
Clock
Suspend
H
L
L
X
X
Exit
H
X
Rev. 0.4 / Sep. 2005
12
HY57V643220D(L/S)T(P)-xI Series
4Banks x 512K x 32bits Synchronous DRAM
PACKAGE INFORMATION
JEDEC STANDARD 400mil 86pin TSOP-II with 0.5mm pin pitch
Unit : mm(inch)
11.938(0.4700)
11.735(0.4620)
22.327(0.8790)
22.149(0.8720)
10.262(0.4040)
10.058(0.3960)
0.150(0.0059)
0.050(0.0020)
1.194(0.0470)
0.991(0.0390)
0.27(0.01063)
0.17(0.00669)
5deg
0deg
0.50(0.0197
)
0.210(0.0083)
0.120(0.0047)
0.597(0.0235)
0.406(0.0160)
0.05
0.05 M
Rev. 0.4 / Sep. 2005
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相关型号:
HY57V643220DLTP-55I
Synchronous DRAM, 2MX32, 5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86
HYNIX
HY57V643220DLTP-5I
Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86
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HY57V643220DLTP-6I
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86
HYNIX
HY57V643220DLTP-7I
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86
HYNIX
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