HY62KT08081E-DGC [HYNIX]
32Kx8bit CMOS SRAM; 32Kx8bit CMOS SRAM
| 型号： | HY62KT08081E-DGC |
| 厂家： | 
HYNIX SEMICONDUCTOR |
| 描述： | 32Kx8bit CMOS SRAM |
| 文件： | 总12页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY62K(U,V)T08081E Series
32Kx8bit CMOS SRAM
Document Title
32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM
Revision History
Revision No History
Draft Date
Remark
00
01
Initial
Jan.20.2000
Final
Merged 3.0V/3.3V SPEC
Revised
Feb.21.2001
Apr.30.2001
Final
Final
-
-
Marking Information Change : SOP Type
Voh Limit Change : 2.4V => 2.2V @2.7~3.6V
02
Changed Logo
-
HYUNDAI -> hynix
-
Marking Information Change
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 02 / Apr. 2001
Hynix Semiconductor
HY62K(U,V)T08081E Series
DESCRIPTION
FEATURES
The HY62K(U,V)T08081E is a high-speed, low
power and 32,786 X 8-bits CMOS Static Random
Access Memory fabricated using Hynix's high
performance CMOS process technology. It is
suitable for use in low voltage operation and
battery back-up application. This device has a
data retention mode that guarantees data to
remain valid at the minimum power supply
voltage of 2.0 volt.
·
·
·
·
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Low power consumption
Battery backup(L/LL-part)
- 2.0V(min.) data retention
Standard pin configuration
- 28 pin 600mil PDIP
- 28 pin 330mil SOP
- 28 pin 8x13.4 mm TSOP-I
(Standard)
·
Product
No.
Voltage
(V)
Speed
(ns)
Operation
Current(mA)
Standby Current(uA)
Temperature
(°C)
LL-Part
HY62KT08081E-C
HY62KT08081E-E
HY62KT08081E-I
HY62VT08081E-C
HY62VT08081E-E
HY62VT08081E-I
HY62UT08081E-C
HY62UT08081E-E
HY62UT08081E-I
5
8
8
5
8
8
5
8
8
0~70(Normal)
2.7~3.6
3.0~3.6
2.7~3.3
70*/85/100
70/85/100
70*/85/100
2
2
2
-25~85(Extended)
-40~85(Extended)
0~70(Normal)
-25~85(Extended)
-40~85(Extended)
0~70(Normal)
-25~85(Extended)
-40~85(Extended)
Note *. Measured at 30pF test load.
PIN CONNECTION
Vcc
A14
A12
A7
1
2
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A12
A7
Vcc
1
2
28
27
26
25
24
23
22
21
20
19
18
17
16
15
/WE
A13
A8
/WE
A13
A8
/OE
A11
A9
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
Vss
I/O3
I/O2
I/O1
A0
3
1
2
28
27
26
25
24
23
22
21
20
19
18
17
16
15
3
A6
4
A6
4
3
A9
A5
5
A5
A9
5
A8
4
A4
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
6
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
A4
6
A13
/WE
Vcc
A14
A12
A7
5
A3
7
A3
7
6
A2
8
A2
7
8
A1
8
A1
9
9
9
A0
10
11
12
13
14
A0
10
11
12
13
14
10
11
12
13
14
I/O1
I/O2
I/O3
Vss
I/O1
I/O2
I/O3
Vss
A6
A5
A4
A1
A3
A2
PDIP
SOP
TSOP-I(Standard)
PIN DESCRIPTION
BLOCK DIAGRAM
ROW DECODER
I/O1
A0
Pin Name
Pin Function
Chip Select
Write Enable
/CS
/WE
MEMORY ARRAY
512x512
/OE
Output Enable
Address Inputs
Data Input/Output
Power(+5.0V)
Ground
A0 ~ A14
I/O1 ~ I/O8
Vcc
A14
I/O8
/CS
Vss
/OE
/WE
Rev 02 / Apr. 2001
2
HY62K(U,V)T08081E Series
ORDERING INFORMATION
Part No.
Vcc
Speed
Power
Temp
Package
HY62KT08081E-DPC
HY62KT08081E-DPE
HY62KT08081E-DPI
HY62KT08081E-DGC
HY62KT08081E-DGE
HY62KT08081E-DGI
HY62KT08081E-DTC
HY62KT08081E-DTE
HY62KT08081E-DTI
HY62VT08081E-DPC
HY62VT08081E-DPE
HY62VT08081E-DPI
HY62VT08081E-DGC
HY62VT08081E-DGE
HY62VT08081E-DGI
HY62VT08081E-DTC
HY62VT08081E-DTE
HY62VT08081E-DTI
HY62UT08081E-DPC
HY62UT08081E-DPE
HY62UT08081E-DPI
HY62UT08081E-DGC
HY62UT08081E-DGE
HY62UT08081E-DGI
HY62UT08081E-DTC
HY62UT08081E-DTE
HY62UT08081E-DTI
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
PDIP
2.7~3.6V
70*/85/100ns LL-part
SOP
TSOP-I Standard
PDIP
3.0~3.6V
70/85/100ns
LL-part
SOP
TSOP-I Standard
PDIP
2.7~3.3V
70*/85/100ns LL-part
SOP
TSOP-I Standard
-25 to 85°C
-40 to 85°C
Note *. Measured at 30pF test load.
ABSOLUTE MAXIMUM RATING (1)
Symbol
Vcc, VIN, VOUT
TA
Parameter
Power Supply, Input/Output Voltage
Rating
-0.3 to 4.6
Unit
V
°C
°C
°C
Operating Temperature
HY62K(U,V)T08081E-C
0 to 70
-25 to 85
-40 to 85
-65 to 150
1.0
HY62K(U,V)T08081E-E
HY62K(U,V)T08081E-I
TSTG
PD
Storage Temperature
Power Dissipation
°C
W
IOUT
TSOLDER
Data Output Current
Lead Soldering Temperature & Time
50
260 ·10
mA
°C·sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
Rev 02 / Apr. 2001
2
HY62K(U,V)T08081E Series
RECOMMENDED DC OPERATING CONDITIONS
Symbol
Vcc
Parameter
HY62KT08081E
Min.
2.7
3.0
2.7
0
Typ.
3.0/3.3
3.3
3.0
0
Max.
3.6
3.6
3.3
0
Unit
V
V
V
V
Power Supply
Voltage
HY62VT08081E
HY62UT08081E
Vss
VIH
VIL
Ground
Input High Voltage
Input Low Voltage
2.2
-0.3(1)
-
-
Vcc+0.3
0.4
V
V
Note
1. VIL = -1.5V for pulse width less than 50ns
TRUTH TABLE
/CS
H
L
L
L
/WE /OE
Mode
Standby
Output Disabled High-Z
I/O Operation
High-Z
X
H
H
L
X
H
L
Read
Write
Data Out
Data In
X
Note
1. H=VIH, L=VIL, X=Don't Care
DC CHARACTERISTICS
Vcc = 2.7~3.6V, TA = 0°C to 70°C (Normal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial),
unless otherwise specified.
Symbol
ILI
ILO
Parameter
Input Leakage Current
Output Leakage Current
Test Condition
Vss < VIN < Vcc
Vss < VOUT < Vcc, /CS = VIH or
/OE = VIH or /WE = VIL
/CS = VIL,
VIN = VIH or VIL, II/O = 0mA
/CS = VIL, VIN = VIH or VIL,
Min. Duty Cycle = 100%, II/O = 0mA
/CS = VIL, VIN = VIH or VIL
Cycle = 1us , II/O = 0mA
/CS= VIH,
Min. Typ. Max. Unit
-1
-1
-
-
1
1
uA
uA
Icc
Operating Power Supply
Current
Average Operating Current
-
-
-
-
-
-
-
-
2
30
5
mA
mA
mA
mA
ICC1
ICC2
ISB
Average Operating Current
TTL Standby Current
(TTL Inputs)
0.3
VIN = VIH or VIL
ISB1
CMOS Standby Current
(CMOS Inputs)
/CS > Vcc - 0.2V,
VIN > Vcc - 0.2V or
VIN < Vss + 0.2V
-
-
-
-
5
8
uA
uA
0~70 °C
-25~85 °C or
-40~85 °C
VOL
VOH
Output Low Voltage
Output High Voltage
IOL = 2.1mA
IOH = -1.0mA
-
-
-
0.4
-
V
V
2.2
Note : Typical values are at Vcc =3.0/3.3V, TA = 25°C
Rev 02 / Apr. 2001
3
HY62K(U,V)T08081E Series
AC CHARACTERISTICS
Vcc = 2.7~3.6V , TA = 0°C to 70°C (Normal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial),
unless otherwise specified.
-70
Max. Min.
-85
Max. Min
-10
Max.
#
Symbol
Parameter
Unit
Min.
READ CYCLE
1
2
3
4
5
6
7
8
9
tRC
tAA
tACS
tOE
tCLZ
tOLZ
tCHZ
tOHZ
tOH
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Deselection to Output in High Z
Out Disable to Output in High Z
Output Hold from Address Change
70
-
-
-
10
5
0
0
10
-
85
-
-
-
10
5
0
0
10
-
100
-
-
-
10
5
0
0
15
-
100
100
50
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
70
70
35
-
85
85
40
-
-
-
-
30
30
-
30
30
-
30
30
-
WRITE CYCLE
10 tWC
11 tCW
12 tAW
13 tAS
14 tWP
15 tWR
16 tWHZ
17 tDW
18 tDH
19 tOW
Write Cycle Time
70
60
60
0
50
0
0
30
0
-
-
-
-
-
-
25
-
-
-
85
70
70
0
60
0
0
40
0
-
-
-
-
-
-
30
-
-
-
100
80
80
0
70
0
0
40
0
-
-
-
-
-
-
35
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Selection to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
5
5
10
Rev 02 / Apr. 2001
4
HY62K(U,V)T08081E Series
AC TEST CONDITIONS
Vcc = 2.7~3.6V, TA = 0°C to 70°C (Normal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial),
unless otherwise specified.
Parameter
Value
Input Pulse Level
Input Rise and Fall Time
0.4V to 2.2V
5ns
Input and Output Timing Reference Level
1.5V
Output Load
tCLZ,tOLZ,tCHZ,tOHZ,tWHZ,tOW
Others
CL = 5pF + 1TTL Load
CL = 100pF + 1TTL Load
CL* = 30pF + 1TTL Load
AC TEST LOADS
TTL
CL(1)
Note : Including jig and scope capacitance
CAPACITANCE
TA = 25°C, f = 1.0MHz
Symbol
CIN
CI/O
Parameter
Input Capacitance
Input /Output Capacitance
Condition
VIN = 0V
VI/O = 0V
Max.
6
8
Unit
pF
pF
Note : These parameters are sampled and not 100% tested
Rev 02 / Apr. 2001
5
HY62K(U,V)T08081E Series
TIMING DIAGRAM
READ CYCLE 1
tRC
ADDR
OE
tAA
tOE
tOH
tOLZ
CS
tACS
tCLZ
tOHZ
tCHZ
High-Z
Data
Out
Data Valid
Note(READ CYCLE):
1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and arenot
referenced to output voltage levels.
2. At any given temperature and voltage condition, tCHZ max. is less than tCLZ min. both for a given device
and from device to device.
3. /WE is high for the read cycle.
READ CYCLE 2
tRC
ADDR
tAA
tOH
tOH
Data
Out
Previous Data
Data Valid
Note(READ CYCLE):
1. /WE is high for the read cycle.
2. Device is continuously selected /CS= VIL.
3. /OE =VIL.
Rev 02 / Apr. 2001
6
HY62K(U,V)T08081E Series
WRITE CYCLE 1(/OE Clocked)
tWC
ADDR
OE
tAW
tCW
CS
tAS
tWR
tWP
WE
tDW
tDH
Data Valid
Data In
tOHZ
Data
Out
WRITE CYCLE 2 (/OE Low Fixed)
tWC
ADDR
tAW
tCW
tWR
CS
tAS
tWP
WE
tDW
tDH
Data Valid
Data In
tWHZ
tOW
(8)
(7)
Data
Out
Rev 02 / Apr. 2001
7
HY62K(U,V)T08081E Series
Notes(WRITE CYCLE):
1. A write occurs during the overlap of a low /CS and a low /WE. A write begins at the latest transition
among /CS going low and /WE going low: A write ends at the earliest transition among /CS going high
and /WE going high. tWP is measured from the beginning of write to the end of write.
2. tCW is measured from the later of /CS going low to the end of write .
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR is applied in case a write ends as /CS,
or /WE going high.
5. If /OE and /WE are in the read mode during this period, and the I/O pins are in the output low-Z state,
input of opposite phase of the output must not be applied because bus contention can occur.
6. If /CS goes low simultaneously with /WE going low, or after /WE going low, the outputs remain in high
impedance state.
7. DOUT is the same phase of the latest written data in this write cycle.
8. DOUT is the read data of the new address.
DATA RETENTION CHARACTERISTIC
Vcc = 2.7~3.6V, TA = 0°C to 70°C (Normal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial),
unless otherwise specified.
Symbol
VDR
Parameter
Vcc for Data Retention
Test Condition
CS>Vcc-0.2V,
VIN>Vcc-0.2V or VIN<Vss+0.2V
Min
2.0
Typ
-
Max
3.6
Unit
V
ICCDR
Data Retention Current
Vcc=3.0V,
-
-
0.5
0.5
-
5
8
-
uA
uA
ns
ns
0~70°C
/CS>Vcc - 0.2V,
VIN>Vcc - 0.2V or
VIN<Vss + 0.2V
See Data Retention
-25~85°C or
-40~85°C
tCDR
Chip Deselect to Data
Retention Time
Operating Recovery Time
0
tR
Timing Diagram
tRC(2)
-
-
Notes
1. Typical values are under the condition of TA = 25°C.
2. tRC is read cycle time.
DATA RETENTION TIMING DIAGRAM
DATA RETENTION MODE
VCC
2.7V/3.0V
tCDR
tR
2.2V
VDR
CS>VCC-0.2V
CS
VSS
Rev 02 / Apr. 2001
8
HY62K(U,V)T08081E Series
PACKAGE INFORMATION
28pin 600mil Dual In-Line Package(Blank)
MAX.
UNIT : INCH(mm)
MIN.
1.467(37.262)
1.447(36.754)
0.600(15.240)BSC
0.065(1.650)
0.050(1.270)
0.090(2.286)
0.070(1.778)
0.550(13.970)
0.530(13.462)
0.155(3.937)
0.145(3.683)
0.035(0.889)
0.020(0.508)
0.140(3.556)
3 deg
11 deg
0.014(0.356)
0.021(0.533)
0.015(0.381)
0.120(3.048)
0.100(2.54)BSC
0.008(0.200)
28pin 330mil Small Outline Package(FW)
MAX
MIN.
UNIT : INCH(mm)
0.346(8.788)
0.338(8.585)
0.480(12.192)
0.460(11.684)
0.110(2.794)
0.094(2.388)
0.728(18.491)
0.720(18.288)
0.012(0.305)
0.008(0.203)
0.014(0.356)
0.002(0.051)
0.050(1.270)
0.030(0.762)
0.050(1.270)BSC
0.020(0.508)
0.014(0.356)
Rev 02 / Apr. 2001
9
HY62K(U,V)T08081E Series
28pin 8x13.4mm Thin Small Outline Package Standard(T)
MAX.
UNIT : INCH(mm)
MIN.
0.468(11.9)
0.460(11.7)
0.536(13.6)
0.520(13.2)
0.319(8.1)
0.311(7.9)
0.040(1.02)
0.036(0.91)
0.008(0.20)
0.002(0.05)
0.008(0.2)
0.027(0.7)
0.022(0.55 BSC)
0.004(0.1)
0.012(0.3)
Rev 02 / Apr. 2001
10
HY62K(U,V)T08081E Series
MARKING INFORMATION
Package
Marking Example
h
H
K
y
Y
O
n
6
i
x
v
y
E
x
y
c
x
w
s
w
s
p
t
2
E
T
0
x
8
x
1
x
PDIP
SOP
R
A
x
x
x
h
H
K
y
Y
O
n
6
i
x
v
y
y
c
w
s
w
s
p
t
2
E
T
0
8
1
E
R
A
h
H
K
y
Y
O
n
i
x
y
y
c
w
w
p
6
2
v
T
0
8
1
E
s
s
t
TSOP-I
R
E
A
Index
• hynix
• KOREA
: hynix Logo
: Origin Country
: Part Name
•
HY62vT081E
- HY62KT081E
- HY62VT081E
- HY62UT081E
: 2.7~3.6V
: 3.0~3.6V
: 2.7~3.3V
• yy
• ww
• p
: Year ( ex : 00 = year 2000, 01 = year 2001 )
: Work Week ( ex : 12 = ww12 )
: Process Code
• c
: Power Consumption
- L
: Low Power
- D
: Low Low Power
• ss
• t
: Speed
- 70
- 85
: 70ns
: 85ns
: Temperature
- C
: Commercial ( 0 ~ 70 °C )
: Extended ( -25 ~ 85 °C )
: Industrial ( -40 ~ 85 °C )
- E
- I
• xxxxxxxx
: Lot Number
: Fixed Item
Note
- Capital Letter
- Small Letter
: Non-fixed Item ( Except hynix )
Rev 02 / Apr. 2001
11
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