2W02 [HY]

SILICON BRIDGE RECTIFIERS; 硅桥式整流器
2W02
型号: 2W02
厂家: HY ELECTRONIC CORP.    HY ELECTRONIC CORP.
描述:

SILICON BRIDGE RECTIFIERS
硅桥式整流器

二极管
文件: 总2页 (文件大小:34K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2W005 thru 2W10  
REVERSE VOLTAGE - 50 to 1000Volts  
FORWARD CURRENT - 2.0 Amperes  
SILICON BRIDGE RECTIFIERS  
WOB  
.366(9.3)  
.350(8.9)  
FEATURES  
.220(5.6)  
.200(5.1)  
Surge overload rating -60 amperes peak  
Ideal for printed circuit board  
Reliable low cost construction utilizong molded plastic  
technique results in expensive product  
Mounting position :Any  
1.1  
1.0  
(27.9)  
(25.4)  
MIN  
Lead: Sliver plated copper lead  
MIN  
.032(0.81)  
.028(0.71)  
POS.  
LEAD  
.220(5.6)  
.180(4.6)  
.220(5.6)  
.180(4.6)  
SPACING  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
SYMBOL  
UNIT  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
2W005  
50  
2W01  
100  
2W02  
200  
2W04  
400  
2W06  
600  
2W08  
800  
2W10  
1000  
VRRM  
VRMS  
VDC  
V
V
V
Maximum RMS Voltage  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average Forward Rectified Current  
I(AV)  
2.0  
A
0.375″(9.5mm) Lead Lengths  
Peak Forward Surage Current ,  
@TA=25 ℃  
IFSM  
60  
A
8.3ms Single Half Sine-Wave  
Super Imposed on Rated Load (JEDEC Method)  
I2t Rating for Fusing (t8.3ms)  
Maximum Forward Voltage Drop  
Per Element at 2.0A Peak  
I2t  
A2s  
V
15.0  
1.1  
VF  
Maximum DC Reverse Current at Rated  
DC Blocking Voltage  
TA=25℃  
TA=100℃  
10.0  
1.0  
30  
uA  
IR  
mA  
Typical Junction Capacitance Per Element (Note1)  
Operating Temperature Range  
CJ  
TJ  
pF  
-55 to +125  
-55 to +125  
Storage Temperature Range  
TSTG  
Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
~ 243 ~  
2W005 thru 2W10  
REVERSE VOLTAGE - 50 to 1000Volts  
FORWARD CURRENT - 2.0 Amperes  
SILICON BRIDGE RECTIFIERS  
WOB  
.366(9.3)  
.350(8.9)  
FEATURES  
.220(5.6)  
.200(5.1)  
Surge overload rating -60 amperes peak  
Ideal for printed circuit board  
Reliable low cost construction utilizong molded plastic  
technique results in expensive product  
Mounting position :Any  
1.1  
1.0  
(27.9)  
(25.4)  
MIN  
Lead: Sliver plated copper lead  
MIN  
.032(0.81)  
.028(0.71)  
POS.  
LEAD  
.220(5.6)  
.180(4.6)  
.220(5.6)  
.180(4.6)  
SPACING  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
SYMBOL  
UNIT  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
2W005  
50  
2W01  
100  
2W02  
200  
2W04  
400  
2W06  
600  
2W08  
800  
2W10  
1000  
VRRM  
VRMS  
VDC  
V
V
V
Maximum RMS Voltage  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average Forward Rectified Current  
I(AV)  
2.0  
A
0.375″(9.5mm) Lead Lengths  
Peak Forward Surage Current ,  
@TA=25 ℃  
IFSM  
60  
A
8.3ms Single Half Sine-Wave  
Super Imposed on Rated Load (JEDEC Method)  
I2t Rating for Fusing (t8.3ms)  
Maximum Forward Voltage Drop  
Per Element at 2.0A Peak  
I2t  
A2s  
V
15.0  
1.1  
VF  
Maximum DC Reverse Current at Rated  
DC Blocking Voltage  
TA=25℃  
TA=100℃  
10.0  
1.0  
30  
uA  
IR  
mA  
Typical Junction Capacitance Per Element (Note1)  
Operating Temperature Range  
CJ  
TJ  
pF  
-55 to +125  
-55 to +125  
Storage Temperature Range  
TSTG  
Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
~ 243 ~  

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