HY12N65FT [HY]
650V/ 12A N-Channel Enhancement Mode MOSFET; 650V / 12A N沟道增强型MOSFET
| 型号： | HY12N65FT |
| 厂家： | 
HY ELECTRONIC CORP. |
| 描述： | 650V/ 12A N-Channel Enhancement Mode MOSFET |
| 文件： | 总4页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY12N65T / HY12N65FT
650V / 12A
650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A
N-Channel Enhancement Mode MOSFET
Features
• Low ON Resistance
• Fast Switching
• Low Gate Charge & Low CRSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
1
1
2
S
2
S
G
G
3
3
D
D
Mechanical Information
ITO-220AB
TO-220AB
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
2
Drain
Marking & Ordering Information
TYPE
MARKING
12N65T
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
1
Gate
HY12N65T
HY12N65FT
Source
3
12N65FT
Absolute Maximum Ratings (TC=25OC unless otherwise noted )
Parameter
Symbol
VDS
HY12N65T
HY12N65FT Units
Drain-Source Voltage
Gate-Source Voltage
650
+30
V
V
A
A
VGS
ID
TC=25OC
TC=25OC
Continuous Drain Current
12
48
12
48
1)
Pulsed Drain Current
IDM
Maximum Power Dissipation
Derating Factor
175
1.4
52
PD
W
0.42
Avalanche Energy with Single Pulse
EAS
760
-55 to +150
mJ
OC
IAS=12A, VDD=90V, L=10.5mΗ
Operating Junction and Storage Temperature Range
TJ,TSTG
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
PARAMETER
Symbol HY12N65T HY12N65FT Units
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
R
R
0.7
2.4
OC/W
OC/W
θJC
θJA
62.5
100
COMPANYRESERVESTHERIGHTTOIMPROVEPRODUCTDESIGN,FUNCTIONSANDRELIABILITYWITHOUTNOTICE
REV1.0 : AUG. 2011
PAGE . 1
HY12N65T / HY12N65FT
Electrical Characteristics ( TC=25OC unless otherwise noted )
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Static
Drain-Source Breakdown Voltag e
BVDSS
VGS(th)
650
2.0
-
-
-
V
V
VGS=0V, I D=250uA
VDS=VGS, I D=250uA
Gate Threshold Voltage
4.0
Drain-Source On-State
Resistance
RDS(on)
-
0.69
0.8
Ω
VGS= 10V, I D= 6.0
VDS=6 0V, VGS=0V
VGS=+30V, VDS=0V
A
Zero Gate Voltage Drain
Current
I DSS
I GSS
-
-
-
-
10
uA
5
Gate Body Leakage
+100
nΑ
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Qg
-
-
-
-
-
-
-
-
-
42.6
8.2
52
-
VDS
=
520V, ID=12A,
VGS=10V
Q
nC
gs
Q
12.8
14.6
22.6
65.2
22.8
1400
175
-
gd
t
20
d(on)
t
32
r
VDD=325V, ID =12
A
ns
VGS=10V, RG=25Ω
t
85
36
2050
210
d(off)
t
f
C
iss
VDS=25V, VGS=0V
f=1.0MHZ
C
pF
oss
Reverse Transfer
Capacitance
C
-
5.5
12
rss
Source-Drain Diode
Max. Diode Forward Current
Max.Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I S
-
-
-
-
-
-
-
12
48
1.4
-
A
A
-
I SM
VSD
-
-
V
IS=12A , VGS=0V
t
460
4.6
ns
uC
rr
VGS=0V, IF=12
A
di/dt=100A/us
Q
-
rr
NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
REV1.0 : AUG. 2011
PAGE . 2
HY12N65T / HY12N65FT
Typical Characteristics Curves ( TC=25℃, unless otherwise noted)
100
10
1
24
20
16
12
8
VDS =50V
VGS= 20V~ 7.0V
6.0V
TJ = 125oC
25oC
5.0V
4
-55oC
0
0.1
0
10
20
30
40
50
1
2
3
4
5
6
7
8
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
1.5
1.2
0.9
0.6
0.3
0
3
2.5
2
ID =6.0A
VGS=10V
1.5
1
VGS = 20V
0.5
0
3
4
5
6
7
8
9
10
0
4
8
12
16
20
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Fig.3 On-Resistance vs Drain Current
Fig.4 On-Resistance vs Gate to Source Voltage
2500
12
f = 1MHz
VGS = 0V
ID =12A
10
V
DS=520V
DS=325V
DS=130V
2000
1500
1000
500
0
Ciss
V
8
6
4
2
0
V
Crss
Coss
0
5
10
15
20
25
30
0
5
10 15 20 25 30 35 40 45
VDS - Drain-to-Source Voltage (V)
Qg - Gate Charge (nC)
Fig.5 Capacitance Characteristic
Fig.6 Gate Charge Characteristic
REV 1.0 : AUG. 2011
PAGE. 3
HY12N65T / HY12N65FT
Typical Characteristics Curves ( TC=25℃, unless otherwise noted)
1.2
1.1
1
2.5
2.1
1.7
1.3
0.9
0.5
ID = 250µA
VGS =10 V
ID =6.0A
0.9
0.8
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ - Junction Temperature (oC)
TJ - Junction Temperature (oC)
Fig.7 On-Resistance
vs Junction Temperature
Fig.8 Breakdown Voltage
vs Junction Temperature
VGS = 0V
10
1
TJ = 125oC
25oC
-55oC
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
Fig.9 Body Diode
Forward Voltage Characteristic
REV 1.0 : AUG. 2011
PAGE. 4
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