HY18N50W [HY]
500V / 18A N-Channel Enhancement Mode MOSFET; 500V / 18A N沟道增强型MOSFET
| 型号： | HY18N50W |
| 厂家： | 
HY ELECTRONIC CORP. |
| 描述： | 500V / 18A N-Channel Enhancement Mode MOSFET |
| 文件： | 总4页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HY18N50W
500V / 18A
N-Channel Enhancement Mode MOSFET
500V, RDS(ON)=0.32W@VGS=10V, ID=9A
Features
• Low On-State Resistance
TO-3PN
• Fast Switching
• Low Gate Charge & Low CRSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
Drain
2
Mechanical Information
1
• Case: TO-3PN Molded Plastic
1
Gate
2
• Terminals : Solderable per MIL-STD-750,Method 2026
3
Source
3
Marking & Ordering Information
TYPE
MARKING
PACKAGE
PACKING
HY18N50W
18N50W
TO-3PN
30PCS/TUBE
Absolute Maximum Ratings (TC=25°C unless otherwise specified )
Parameter
Value
500
+30
18
Units
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
V
V
A
A
VGS
ID
TC=25℃
TC=25℃
Continuous Drain Current
Pulsed Drain Current 1)
IDM
72
Maximum Power Dissipation
Derating Factor
200
1.6
PD
W
Avalanche Energy with Single Pulse
L=30mH, IAS=8.6A, VDS=140V
EAS
1050
mJ
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to +150
℃
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
Parameter
Symbol
RqJC
Value
0.62
40
Units
℃/W
℃/W
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
RqJA
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV. 1, 11-Jan-2012
PAGE.1
HY18N50W
Electrical Characteristics ( TC=25, Unless otherwise noted )
Paramter
Test Condition
Symbol
Min.
Typ.
Max.
Units
Static
BVDSS
VGS(th)
RDS(ON)
IDSS
VGS=0V、ID=250uA
VDS=VGS、ID=250uA
VGS=10V、ID=9A
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate Body Leakage Current
Dynamic
500
-
-
V
V
2
-
-
4
0.26
0.32
1.0
+100
W
VDS=500V、VGS=0V
VGS=+30V、VDS=0V
-
-
-
uA
nA
IGSS
-
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
-
-
-
-
-
-
-
-
-
-
52.2
10.8
14.8
21.8
36.8
88.2
46
-
-
VDS=400V、ID=18A
nC
ns
Gate-Source Charge
VGS=10V
Gate-Drain Charge
-
Turn-On Delay Time
32
46
112
66
2650
420
12
Turn-On Rise Time
VDD=250V、ID=18A
VGS=10V、RG=25W
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
Ciss
Coss
Crss
Input Capacitance
2250
320
7.4
VDS=25V、VGS=0V
pF
Output Capacitance
f=1.0MHZ
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forwad Voltage
Max. Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
ISM
VSD
trr
-
-
-
-
-
-
-
-
18
72
1.5
-
A
A
-
IS=18A、VGS=0V
-
V
480
4.5
ns
uC
VGS=0V、IS=18A
di/dt=100A/us
Qrr
-
NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2%
PAGE.2
REV. 1, 11-Jan-2012
HY18N50W
Typical Characteristics Curves ( TC=25℃, unless otherwise noted)
100
10
1
50
40
30
20
10
0
VDS =50V
VGS= 20V~ 8.0V
7.0V
TJ = 125oC
6.0V
5.0V
25oC
-55oC
6
0
0
10
20
30
40
50
1
2
3
4
5
7
8
9
10
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
0.6
0.5
0.4
0.3
0.2
0.1
0
2
ID =9.0A
1.5
1
VGS=10V
VGS = 20V
0.5
0
3
4
5
6
7
8
9
10
0
4
8
12
16
20
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Fig.3 On-Resistance vs Drain Current
Fig.4 On-Resistance vs Gate to Source Voltage
4000
3000
2000
1000
0
12
f = 1MHz
VGS = 0V
ID =18A
10
8
V
DS=400V
V
DS=250V
Ciss
V
DS=100V
6
4
Coss
2
Crss
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Qg - Gate Charge (nC)
Fig.5 Capacitance Characteristic
Fig.6 Gate Charge Characteristic
REV. 1, 11-Jan-2012
PAGE.3
HY18N50W
Typical Characteristics Curves ( TC=25℃, unless otherwise noted)
1.2
1.1
1
2.5
2.1
1.7
1.3
0.9
0.5
ID = 250mA
VGS =10 V
ID =9.0A
0.9
0.8
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ - Junction Temperature (oC)
TJ - Junction Temperature (oC)
Fig.7 On-Resistance
vs Junction Temperature
Fig.8 Breakdown Voltage
vs Junction Temperature
100
10
VGS = 0V
TJ = 125oC
25oC
1
-55oC
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
Fig.9 Body Diode
Forward Voltage Characteristic
PAGE.4
REV. 1, 11-Jan-2012
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