KBJ2508 [HY]

SILICON BRIDGE RECTIFIERS; 硅桥式整流器
KBJ2508
型号: KBJ2508
厂家: HY ELECTRONIC CORP.    HY ELECTRONIC CORP.
描述:

SILICON BRIDGE RECTIFIERS
硅桥式整流器

整流二极管
文件: 总2页 (文件大小:41K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KBJ25005 thru KBJ2510  
REVERSE VOLTAGE  
FORWARD CURRENT  
- 50 to 1000Volts  
- 25 Amperes  
SILICON BRIDGE RECTIFIERS  
KBJ  
FEATURES  
? .134(3.4)  
? .122(3.1)  
Rating to 1000V PRV  
.213(5.4)  
.197(5.0)  
.173(4.4)  
1.193(30.3)  
1.169(29.7)  
Ideal for printed circuit board  
.157(4.0)  
Low forward voltage drop,high current capability  
Reliable low cost construction utilizing molded plastic  
technique results in inexpensive product  
The plastic material has UL flammability  
classification 94V-0  
_
+
~
~
.106(2.7)  
.096(2.3)  
.094(2.4)  
.075(1.9)  
.114(2.9)  
.098(2.5)  
.043(1.1)  
.035(0.9)  
.031(0.8)  
.023(0.6)  
.402(10.2)  
.386(9.8)  
.303(7.7).303(7.7)  
SPACING  
.287(7.3)  
.287(7.3)  
Dimensions in inches and (milimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
KBJ  
25005  
KBJ  
2501  
KBJ  
2502  
KBJ  
2504  
KBJ  
2506  
KBJ  
2508  
KBJ  
2510  
SYMBOL  
UNIT  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
30  
50  
100  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
V
V
V
70  
700  
Maximum DC Blocking Voltage  
100  
1000  
25.0  
4.2  
Maximum Average Forward  
(with heatsink Note 2)  
I(AV)  
A
Rectified Current @ TC=100(without heatsink)  
Peak Forward Surage Current  
IFSM  
400  
A
8.3ms Single Half Sine-Wave  
Super Imposed on Rated Load (JEDEC Method)  
1.1  
Maximum Forward Voltage at 12.5A DC  
VF  
IR  
V
10  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@ TJ=25℃  
uA  
500  
@ TJ=125℃  
I2t  
CJ  
A2s  
pF  
I2t Rating for Fusing (t<8.3ms)  
510  
85  
Typical Junction Capacitance Per Element (Note1)  
Typical Thermal Resistance (Note2)  
Operating Temperature Range  
RθJC  
TJ  
/W  
0.6  
-55 to +125  
-55 to +150  
Storage Temperature Range  
TSTG  
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2.Device mounted on 300mm*300mm*1.6mm cu plate heatsink.  
~ 267 ~  
RATING AND CHARACTERTIC CURVES  
KBJ25005 thru KBJ2510  
FIG.2-MAXMUN NON-REPETITIVE  
SURGE CURRENT  
FIG.1-FORWARD CURRENT DERATING CURVE  
25  
400  
350  
300  
250  
200  
150  
100  
WITH HEATSINK  
TJ=150℃  
SINGLE -SINE- WAVE  
20  
(JEDEC METHOD)  
SINGLE PHASE HALF WAVE 60Hz  
15 RESISTIVE OR INDUCTIVE LOAD  
10  
WITHOUT HEATSINK  
5
SINGLE HALF-SINE-WAVE  
(JEDEC METHOD)  
50  
0
0
1
2
10  
2
50  
100  
5
20  
40  
60  
100  
120  
140  
0
80  
NUMBER OF CYCLES AT 60Hz  
CASE TEMPERATURE, °C  
FIG.4-TYPICAL FORWARD CHARACTERISTICS  
FIG.3-TYPICAL JUNCTION CAPACITANCE  
100  
10  
1000  
100  
1.0  
TJ = 25℃  
PULSE WIDTH 300us  
10  
0.1  
TJ=25,f=1MHZ  
1.0  
0.01  
1.0  
10.0  
REVERSE VOLTAGE,(VOLTS)  
100  
0.8  
1.0  
1.4  
1.8  
0
0.2  
0.4 0.6  
1.2  
1.6  
INSTANTANEOUS FORWARD VOLTAGE, VOLTS  
FIG.5-TYPICAL REVERSE CHARACTERISTICS  
1000  
100  
TJ=125℃  
TJ=100℃  
10  
1.0  
0.1  
TJ=50℃  
TJ=25℃  
0
20  
40  
60  
80  
100  
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)  
~ 268 ~  

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