RS1JL [HY]
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon;
| 型号： | RS1JL |
| 厂家： | 
HY ELECTRONIC CORP. |
| 描述： | Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon 光电二极管 |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RS1AL thru RS1ML
SURFACE MOUNT FAST RECOVERY
GLASS PASSIVATED RECTIFIERS
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 1.0 Ampere
SOD-123FL
FEATURES
● Fast switching for high efficiency
.114(2.9)
.098(2.5)
● Low cost
● Diffused junction
● Low reverse leakage current
● Low forward voltage drop
.039(1.0)
.024(0.6)
● High current capability
● The plastic material carries UL recognition 94V-0
MECHANICAL DATA
.047(1.2)
.031(0.8)
●Case: JEDEC SOD-123FL molded plastic
body over glass passivated chip
.043(1.1)
.020(0.5)
.154(3.9)
.138(3.5)
.004(0.1)max
.010(0.25)
.002(0.05)
●Terminals: Solder plated, solderable per
J-STD-002B and JESD22-B102D
●Polarity: Laser band denotes cathode end
●Weight: 0.017gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SYMBOL RS1AL RS1BL RS1DL RS1GL
RS1JL
R1JL
600
RS1KL RS1ML
UNIT
CHARACTERISTICS
MARKING R1AL
R1BL
100
70
R1DL
200
R1GL
400
R1KL
800
R1ML
1000
700
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
V
V
V
140
280
420
560
Maximum DC Blocking Voltage
Maximum Average Forward
100
200
400
600
800
1000
I(AV)
1.0
A
Rectified Current
@TA=75 ℃
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
IFSM
25
A
1.3
Peak Forward Voltage at 1.0A DC
VF
IR
V
5.0
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25℃
@TJ=100℃
μA
100
150
500
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Trr
CJ
250
nS
pF
9
180
RθJA
TJ
℃/W
℃
-55 to +150
-55 to +150
Storage Temperature Range
TSTG
℃
NOTES: 1.Measured with IF=0.5A,IR=1A,IRR=0.25A
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
3.Thermal resistance junction to ambient.
REV. 1, 30-Dec-2011
~ 76 ~
RATING AND CHARACTERTIC CURVES
RS1AL thru RS1ML
FIG. 1 – FORWARD CURRENT DERATING CURVE
FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT
40
1.0
0.8
0.6
30
20
0.4
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0.2
10
0
PULSE WIDTH 8.3ms
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
0
25
50
75
100
125
150
175
10
100
1
2
5
20
50
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE (℃)
FIG.3 – TYPICAL JUNCTION CAPACITANCE
FIG.4-TYPICAL FORWARD CHARACTERISTICS
100
10
1.0
10
TJ = 25°C
0.1
TJ = 25°C f = 1 MHz
PULSE WIDTH 300us
0.01
1
0
0.4
0.2
1.6
1.8
0.6 0.8 1.0
1.2 1.4
100
1
4
10
INSTANTANEOUS FORWARD VOLTAGE ,VOLTS
REVERSE VOLTAGE ,VOLTS
REV. 1, 30-Dec-2011
~ 77 ~
相关型号：
RS1J_NL
Rectifier Diode, Schottky, 1 Element, 1A, 600V V(RRM), Silicon, LEAD FREE, DO-214AC
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