SM5819 [HY]
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS; 表面贴装肖特基二极管
| 型号： | SM5819 |
| 厂家： | 
HY ELECTRONIC CORP. |
| 描述： | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
| 文件： | 总2页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM5817 thru SM5819
SURFACE MOUNT
REVERSE VOLTAGE - 20 to 40 Volts
FORWARD CURRENT - 1.0 Amperes
SCHOTTKY BARRIER RECTIFIERS
FEATURES
● Metal-Semiconductor junction with gard ring
SMA
● Epitaxial construction
● Low forward voltage drop
● High current capability
.062(1.60)
.055(1.40)
.114(2.90)
.098(2.50)
● The plastic material carries UL recognition 94V-0
● For use in low vlotage, high frequency inverters,
free wheeling, and polarity protection applications
.181(4.60)
.157(4.00)
.012(.305)
.006(.152)
.103(2.62)
.079(2.00)
MECHANICAL DATA
●Case： Molded Plastic
.008(.203)
.002(.051)
.060(1.52)
.030(0.76)
●Polarity: lndicated by cathode band
.208(5.28)
.188(4.80)
●Weight: 0.002 ounces,0.064 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SM5817
20
SM5818
30
SM5819
40
SYMBOL
VRRM
UNIT
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
14
21
28
VRMS
20
30
40
Maximum DC Blocking Voltage
Maximum Average Forward
VDC
I(AV)
1.0
40
A
Rectified Current
@TA =75 ℃
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
IFSM
A
0.450
0.750
0.550
0.875
0.600
0.900
Maximum Forward Voltage at 1.0A DC
Maximum Forward Voltage at 3.0A DC
VF
VF
V
V
1.0
10
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
@TJ=25℃
@TJ=100℃
IR
mA
110
80
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
CJ
RθJA
TJ
pF
℃/W
℃
-55 to +150
-55 to +150
TSTG
℃
NOTES: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
2.Thermal resistance junction to ambient,
~ 153 ~
RATING AND CHARACTERTIC CURVES
SM5817 thru SM5819
FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT
FIG. 1 - FORWARD CURRENT DERATING CURVE
1.00
40
30
0.75
20
0.5
SINGLE PHASE
HALF WAVE 60Hz
0.25
10
0
PULSE WIDTH 8.3mS
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
RESISTIVE OR
INDUCTIVE LOAD
0
100
1
2
5
10
20
50
25
50
75
100
125
150
175
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE
FIG.4-TYPICAL FORWARD CHARACTERISTICS
FIG.3 – TYPICAL JUNCTION CAPACITANCE
1000
10
1N5817
100
1N5819
1N5818
1.0
0.1
TJ= 25°C f = 1 MHz
TJ = 25°C
PULSE WIDTH 300us
1
1.2
0
0.2
0.4
0.6
0.8
1.0
100
10
REVERSE VOLTAGE, (VOLTS)
4
1
INSTANTANEOUS FORWARD VOLTAGE, (VOLTS)
~ 154 ~
相关型号：
SM5819-W
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MELF-2
RECTRON
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