IC-DIEVALDI1D [ICHAUS]
DUAL SENSOR INTERFACE; 双传感器接口
| 型号： | IC-DIEVALDI1D |
| 厂家： | 
IC-HAUS GMBH |
| 描述： | DUAL SENSOR INTERFACE |
| 文件： | 总15页 (文件大小：481K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 1/15
FEATURES
APPLICATIONS
♦ Dual channel switches, configurable for high-side, low-side
and push-pull operation
♦ Switches are current limited
♦ Sensor interface for light barriers
and proximity switches, for
example
♦ Push-pull operation with tristate function
♦ Output current of up to 100 mA per channel
♦ Parallel connection of both channels possible
♦ Channel 1 can be inverted (antivalent output)
♦ Wide supply voltage range of 9 to 30 V
♦ Sensor parameterisation via a feedback channel (up to 30 V)
♦ Switching converters and regulators for 3.3/5 V voltage
generation
PACKAGES
♦ Error detection with hysteresis with excessive temperature,
overload and low voltage
♦ Driver shutdown in the event of error
QFN24 4 mm x 4 mm
♦ Error messaging via two open-collector outputs
BLOCK DIAGRAM
LVH
RSET
CVH
1 uF
22 uH
8.2 kΩ
..50 mA
VH
VHL
ISET
VBR
VCC
VCC3
VCC
NUVD
NOVL
Undervoltage
Overtemp.
Overload
VCC3
VBO
HS1
QCFG1
QP1
QN1
IN1
1 nF
INV1
LS1
LINE
HS2
LS2
QCFG2
IN2
QP2
QN2
1 nF
VN
OEN
GND
VBR
VN
CFI
CFO
CFP
=1
Copyright © 2008 iC-Haus
http://www.ichaus.com
iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 2/15
DESCRIPTION
iC-DI is a monolithic interface iC with two inde- NUVD (for low voltage at VBR or voltages VCC and
pendent switching channels which enables digital VCC3, generated internally). The output switches
sensors to drive peripheral elements, such as pro- are shut down with all types of error.
grammable logic controllers (PLC) and relays, for ex-
ample.
To avoid errors occurring when the device is switched
on the outputs remain at high impedance for ca.
The switches can be operated as push-pull, high- 50 ms after the low voltage threshold has been ex-
side or low-side switches using inputs QCFG1 and ceeded.
QCFG2 (open, high and low) and are enabled or dis-
abled via input OEN. They are designed to cope with Sensor interface iC-DI has an integrated switching
high driver currents of 100 mA (RSET = 8.2 kΩ), are converter which generates voltages VCC (5 V) and
current limited and also short-circuit-proof in that they VCC3 (3.3 V) with the aid of two back-end series-
shut down should excessive temperature or an over- regulators. If only a low current is required inductor
load occur. The output current limit can be set via an LVH may be omitted; the series regulators are then
external resistor at ISET.
powered directly by VBR.
The protective overload feature is included here as Input INV1 permits the input signal at channel 1 (IN1)
an integrator so that capacitive loads with low repeat to be inverted.
rates can be switched without the protective circuitry
cutting in. In the event of excessive temperature an The connected sensor can be parameterised using
error message is generated immediately.
the feedback channel with a high volt input (CFI →
CFO).
Errors are signalled by two open-collector outputs:
NOVL (for excessive temperature and overloads) and
iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 3/15
PACKAGES QFN24 4 mm x 4 mm to JEDEC Standard
PIN CONFIGURATION QFN24 4 mm x 4 mm
PIN FUNCTIONS
No. Name Function
4 QCFG1 Configuration Input Channel 1
5 QCFG2 Configuration Input Channel 2
23
22
24
21
20
19
6 IN2
7 OEN
Input Channel 2
Output Enable Input
18
17
16
15
14
13
1
2
8 NOVL Overload Error Output
9 NUVD Undervoltage Error Output
3
10 CFO
11 CFP
12 CFI
13 QP2
14 QN2
15 VN
16 QN1
17 QP1
18 VBO
19 VBR
Output Feedback Channel
Configuration Input Feedback Channel
Input Feedback Channel
DI
code...
...
4
5
Output High Side Switch Channel 2
Output Low Side Switch Channel 2
Reference Voltage Low Side Switch
Output Low Side Switch Channel 1
Output High Side Switch Channel 1
Reference Voltage High Side Switch
Power Supply switching converter and
linear regulators
6
8
9
10
12
7
11
PIN FUNCTIONS
No. Name Function
20 VHL
21 VH
22 VCC
Inductor Switching Converter
Input Linear Regulators
5 V Sensor Supply
1 ISET Reference Current for current limitation
of driver outputs
23 VCC3 3.3 V Sensor Supply
24 GND Ground
2 INV1 Inverting Input Channel 1
3 IN1
Input Channel 1
Pins GND and VN must not be externally connected, otherwise with reverse bias intolerably high current
may flow!
The Thermal Pad is to be connected to a Ground Plane (VN) on the PCB.
Only pin 1 marking on top or bottom defines the package orientation (iC-DI label and coding is subject
to change).
iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 4/15
ABSOLUTE MAXIMUM RATINGS
Beyond these values damage may occur; device operation is not guaranteed. Absolute Maximum Ratings are no Operating Conditions.
Integrated circuits with system interfaces, e.g. via cable accessible pins (I/O pins, line drivers) are per principle endangered by injected
interferences, which may compromise the function or durability. The robustness of the devices has to be verified by the user during system
development with regards to applying standards and ensured where necessary by additional protective circuitry. By the manufacturer
suggested protective circuitry is for information only and given without responsibility and has to be verified within the actual system with
respect to actual interferences.
Item Symbol
No.
Parameter
Conditions
Unit
Min.
Max.
G001 VBO
Power Supply at VBO
Referenced to lowest voltage of VN, VBR,
QP1, QN1, QP2, QN2, CFI, VH, VHL
Referenced to highest voltage of VN, VBR,
QP1, QN1, QP2, QN2, CFI, VH, VHL
36
V
V
-36
-10
G002 I(VBO)
G003 VBR
Current in VBO
600
36
mA
V
Power Supply at VBR
Referenced to lowest voltage of VN, VBO,
QP1, QN1, QP2, QN2, CFI, VH, VHL
Referenced to highest voltage of VN, VBO,
QP1, QN1, QP2, QN2, CFI, VH, VHL
-36
-10
V
G004 I(VBR)
G005 V(VH)
Current in VBR
Voltage at VH
600
36
mA
V
Referenced to lowest voltage of VN, VBO,
VBR, QP1, QN1, QP2, QN2, CFI, VHL
Referenced to highest voltage of VN, VBO,
VBR, QP1, QN1, QP2, QN2, CFI, VHL
-36
-5
V
G006 I(VH)
Current in VH
Voltage at VHL
70
36
mA
V
G007 V(VHL)
Referenced to lowest voltage of VN, VBO,
VBR, QP1, QN1, QP2, QN2, CFI, VH
Referenced to highest voltage of VN, VBO,
VBR, QP1, QN1, QP2, QN2, CFI, VH
-36
V
G008 I(VHL)
G009 V(VN)
Current in VHL
-150
5
mA
Voltage at GND vs. VN
VN < VBO
VN > VBO (reverse bias)
-1
-27
3
3
V
V
G010 I(VN)
Current in VN
VN < VBO
VN > VBO (reverse bias)
-500
-10
500
10
mA
mA
G011 I(GND)
G012 V()
G013 I()
Current in GND
-300
-0.3
-50
300
7
mA
V
Voltage at VCC, VCC3
Current in VCC, VCC3
Voltage at QP1, QN1, QP2, QN2
10
36
mA
V
G014 V()
Referenced to lowest voltage of VN, VBO,
VBR, QP1, QN1, QP2, QN2, CFI, VH, VHL
Referenced to highest voltage of VN, VBO,
VBR, QP1, QN1, QP2, QN2, CFI, VH, VHL;
VN < VBO, VBO < 29 V
-7
-36
-36
V
V
V
VN < VBO, VBO > 29 V
VN > VBO (reverse bias)
G015 I()
Current in QP1, QP2
Current in QN1, QN2
Voltage at CFI
-400
mA
mA
V
G016 I()
400
36
G017 V(CFI)
Referenced to lowest voltage of VN, VBO,
VBR, QP1, QN1, QP2, QN2, CFI, VH, VHL
Referenced to highest voltage of VN, VBO,
VBR, QP1, QN1, QP2, QN2, CFI, VH, VHL
-36
V
G018 I(CFI)
G019 V()
Current in CFI
-4
4
7
mA
V
Voltage at INV1, QCFG1, QCFG2, IN1,
IN2, OEN, CFP
-0.3
G020 I()
Current in INV1, QCFG1, QCFG2, IN1,
IN2, OEN, CFP
-4
4
mA
G021 V()
Voltage at NOVL, NUVD, CFO
Current in NOVL, NUVD, CFO
Voltage at ISET
-0.3
-5
7
20
7
V
mA
V
G022 I()
G023 V(ISET)
G024 I(ISET)
G025 Vd()
G026 Tj
-0.3
-4
Current in ISET
4
mA
kV
°C
ESD Susceptibility at all pins
Operating Junction Temperature
HBM, 100 pF discharged through 1.5 kΩ
0.6
150
-40
All voltages are referenced to ground unless otherwise stated.
All currents into the device pins are positive; all currents out of the device pins are negative.
iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 5/15
ABSOLUTE MAXIMUM RATINGS (cont’d)
Item Symbol
No.
Parameter
Conditions
Unit
Min.
-40
Max.
G027 Ts
Storage Temperature Range
150
°C
THERMAL DATA
Operating Conditions:
VBO = 9...30 V, VBR = 9...30 V (both referenced to VN), Tj = -40...125 °C, RSET = 8.2 kΩ ±1%, unless otherwise stated
Item Symbol
No.
Parameter
Conditions
Unit
°C
Min. Typ. Max.
T01 Ta
Operating Ambient Temperature Range
(extended range on request)
-40
85
T02 Rthja
Thermal Resistance Chip/Ambient
Surface mounted, thermal pad soldered to
ca. 2 cm² heat sink
30
40
K/W
All voltages are referenced to ground unless otherwise stated.
All currents into the device pins are positive; all currents out of the device pins are negative.
iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 6/15
ELECTRICAL CHARACTERISTICS
Operating Conditions:
VBO = 9...30 V, VBR = 9...30 V (both referenced to VN), Tj = -40...125 °C, RSET = 8.2 kΩ ±1%, unless otherwise stated
Item Symbol
No.
Parameter
Conditions
Unit
Min.
Typ.
24
Max.
Total Device
001 VBO
Permissible Supply Voltage
Supply Current in VBO
Permissible Supply Voltage
Supply Current in VBR
Referenced to VN
9
9
30
0.3
30
6
V
mA
V
002 I(VBO)
003 VBR
No load, I(QP1) = I(QP2) = 0, HSx switched on
24
004 I(VBR)
VH connected to VBR, no load,
mA
I(VCC) = I(VCC3) = 0, V(OEN) = hi
005 Vc()hi
006 Vc()lo
007 Vc()hi
008 Vc()lo
Clamp Voltage hi at VBO, VBR
vs. VN
I() = 10 mA
36
V
V
V
V
Clamp Voltage lo at VBO, VBR
vs. VN
I() = -10 mA
-36
39
-6
Clamp Voltage hi at QN1, QN2
vs. VN
I() = 1 mA, VBO and VBR > VN
I() = -1 mA, VBO and VBR > VN
36
-9
Clamp Voltage lo at QP1, QP2
vs. VN
009 Vc(CFI)hi Clamp Voltage hi at CFI vs. VN I() = 1 mA
010 Vc(CFI)lo Clamp Voltage lo at CFI vs. VN I() = -1 mA
36
V
V
V
-36
-36
011 Vc(VN)hi Clamp Voltage hi at VN vs. low- I() = 1 mA
est voltage of QP1, QN1, QP2,
36
QN1, CFI
012 Vc()hi
013 Vc()lo
014 Vc()hi
Clamp Voltage hi at VH, VHL
Clamp Voltage lo at VH, VHL
I() = 1 mA
I() = -1 mA
36
7
V
V
V
Clamp Voltage hi at VCC, VCC3, I() = 1 mA
ISET, INV1, IN1, IN2, QCFG1,
QCFG2, OEN, CFO, CFP, NOVL,
NUVD
015 Vc()lo
016 tpio
Clamp Voltage lo at VCC, VCC3, I() = -1 mA
ISET, INV1, IN1, IN2, QCFG1,
QCFG2, OEN, CFO, CFP, NOVL,
NUVD
-0.5
11
V
Propagation Delay
IN1 → QP1, QN1
IN2 → QP2, QN2
2.4
10
µs
017 R(GND)off Resistance of GND switch
VBO < VN (reverse bias)
kΩ
018 R(GND)on Resistance of GND switch
VBO > VN; V(GND) < VN + 0.6V
20
Ω
Low-Side Switch QN1, QN2; V(QCFG1) = V(QCFG2) = 0 V
101
Vs()lo
Saturation Voltage lo at QN1,
QN2 vs. VN
RSET = 5.1 kΩ;
I() = 100 mA
I() = 50 mA
1.5
1
0.3
V
V
V
I() = 10 mA
102 Isc()lo
Short-Circuit Current lo in QN1, RSET = 8.2 kΩ, V() = 1.4 V...VBO
100
125
160
mA
QN2
103 Vol()on
104 Vol()off
105 Vol()hys
Overload Detection Threshold on QN1, QN2 lo → hi; referenced to GND
Overload Detection Threshold off QN1, QN2 hi → lo; referenced to GND
1.55
1.5
2.1
1.8
V
V
V
Overload Detection Threshold
Hysteresis
Vol()hys = Vol()on − Vol()off
0.1
106
llk()
Leakage Current at QN1, QN2
OEN = lo;
V(QN1, QN2) = VBO...VBO + 6 V
V(QN1, QN2) = 0...VBO
V(QN1, QN2) = -6...0 V
0
0
-500
50
50
0
µA
µA
µA
107 SR()
108 Imax()
109 Ir()
Slew Rate (switch off → on)
VBO = 30 V, Cl = 2.2 nF
45
V/µs
mA
Maximum Current in QN1, QN2 V(ISET) = 0 V, QNx > 3 V
195
-10
300
450
Reverse Current in QN1, QN2
QNx activated; V(QNx) = -6 V
mA
iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 7/15
ELECTRICAL CHARACTERISTICS
Operating Conditions:
VBO = 9...30 V, VBR = 9...30 V (both referenced to VN), Tj = -40...125 °C, RSET = 8.2 kΩ ±1%, unless otherwise stated
Item Symbol
No.
Parameter
Conditions
Unit
Min.
Typ.
Max.
High-Side Switch QP1, QP2; V(QCFG1) = V(QCFG2) = 5 V
201
Vs()hi
Saturation Voltage hi vs. VBO
RSET = 5.1 kΩ;
I() = -100 mA
I() = -50 mA
-1.2
-0.7
-0.3
V
V
V
I() = -10 mA
202 Isc()hi
203 Vol()on
204 Vol()off
205 Vol()hys
Short-Circuit Current hi
RSET = 8.2 kΩ, V() = 0...VBO − 1.5 V
-160
-2.1
-1.8
0.1
-125
-100
-1.5
-1.4
mA
V
Overload Detection Threshold on QP1, QP2 hi → lo; referenced to VBO
Overload Detection Threshold off QP1, QP2 lo → hi; referenced to VBO
Overload Detection Threshold
Hysteresis
V
Vol()hys = Vol()off − Vol()on
V
206
llk()
Leakage Current at QP1, QP2
OEN = lo;
V(QP1, QP2) = -6...0 V
V(QP1, QP2) = 0 V...VBO
V(QP1, QP2) > VBO...VBO + 6 V
-500
-40
0
0
0
500
µA
µA
µA
207 SR()
208 Imax()
209 Ir()
Slew Rate (switch off → on)
VBO = 30 V, Cl = 2.2 nF
40
-350
1
V/µs
mA
Maximum Current in QP1, QP2 V(ISET) = 0 V, VBO − QPx > 4 V
-630
-450
Reverse Current in QP1, QP2
QPx activated; V(QPx) = VBO...VBO + 6 V
Permanent overload (see Fig. 1)
mA
Short-Circuit/Overload Monitor
301 toldly
Time to Overload Message
(NOVL 1 → 0, switch tri-state)
Time to Overload Message Reset No overload (see Fig. 2)
126
35
180
50
280
80
µs
302 tolcl
ms
(NOVL 0 → 1, switch active)
VBR Voltage Monitor
401 VBRon
402 VBRoff
403 VBRhys
404 tuvdly
Turn-On Threshold VBR
Referenced to GND
8
9
V
V
Turn-Off Threshold VBR
Hysteresis
Decreasing voltage VBR
7.3
200
15
8.5
VBRhys = VBRon − VBRoff
500
50
mV
µs
Time to Undervoltage Message Permanent undervoltage at VBR, VCC or
(NUVD 1 → 0, switch tri-state)
Time to Undervoltage Message No undervoltage at VBR, VCC and VCC3 (see
100
80
VCC3
405 tuvcl
35
ms
Reset (NUVD 0 → 1, switch ac- Fig. 1)
tive)
Temperature Monitor
501 Toff
Overtemperature Shutdown
(NOVL 1 → 0, switch tri-state)
Increasing temperature Tj
130
35
155
80
°C
502 ton
Overtemperature Shutdown Re- Temperature Tj < Toff
set Delay
50
ms
(NOVL 0 → 1, switch active)
Inputs IN1, IN2, INV1, QCFG1, QCFG2, OEN
601 Vt()hi
602
603 Vt()hys
604
Input Threshold Voltage hi at IN1,
IN2, INV1, OEN
2
V
V
Vt()lo
Input Threshold Voltage lo at IN1,
IN2, INV1, OEN
0.8
Hysteresis at IN1, IN2, INV1,
OEN
Vt()hys = Vt()hi − Vt()lo
300
500
64
mV
Ipd()
Pull-Down Current at IN1, IN2,
INV1
V() = 0.4 V...Vt()lo
V() > Vt()hi
30
10
168
40
µA
µA
605 Ipd(OEN) Pull-Down Current at OEN
V(OEN) > 0.4 V
1
6
µA
%
606 Vahi()
Input Threshold hi at QCFG1,
QCFG2 (V() > Va()hi ⇒ QN1,
QN2 tri-state)
Referenced to VCC3 (see Fig. 3)
52
69
607 Vahi()hys Hysteresis hi at QCFG1, QCFG2 Referenced to VCC3 (see Fig. 3)
3
7
%
(V() < Vahi() − Vahi()hys ⇒ QN1,
QN2 active)
iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 8/15
ELECTRICAL CHARACTERISTICS
Operating Conditions:
VBO = 9...30 V, VBR = 9...30 V (both referenced to VN), Tj = -40...125 °C, RSET = 8.2 kΩ ±1%, unless otherwise stated
Item Symbol
No.
Parameter
Conditions
Unit
Min.
Typ.
Max.
608 Valo()
Input Threshold lo at QCFG1,
QCFG2 (V() < Va()lo ⇒ QP1,
QP2 tri-state)
Referenced to VCC3 (see Fig. 3)
24
29
34
%
609 Valo()hys Hysteresis lo at QCFG1, QCFG2 Referenced to VCC3 (see Fig. 3)
3
7
%
(V() > Valo() + Valo()hys ⇒ QN1,
QN2 active)
610 Vpp()
611 Ri()
612 tsup
613 ttrig
614 tsup
615 ttrig
Open Circuit Voltage at QCFG1, Referenced to VCC3
QCFG2
42
40
46.5
85
51
190
2.2
%
kΩ
µs
µs
µs
µs
Internal Resistance at QCFG1,
QCFG2
Permissible Spurious Pulse
Width at IN1, IN2, INV1, OEN
No activity triggered
Activity triggered
Required Pulse Width at IN1,
IN2, INV1, OEN
7
Permissible Spurious Pulse
Width at QCFG1, QCFG2
No activity triggered
4.5
Required Pulse Width at QCFG1, Activity triggered
QCFG2
14
Error Output NOVL, NUVD
701 Vs()lo
702 Isc()lo
703 Ilk()
Saturation Voltage lo
I() = 1.0 mA
0.4
25
10
V
Short Circuit Current lo
Leakage Current
V() = 0.4 V...VCC
V() = 0 V...VCC, no error
1.2
-10
mA
µA
Feedback Channel CFI to CFO
801 Vt1(CFI)hi Input Threshold 1 hi at CFI
802 Vt1(CFI)lo Input Threshold 1 lo at CFI
803 Vt2(CFI)hi Input Threshold 2 hi at CFI
804 Vt2(CFI)lo Input Threshold 2 lo at CFI
VBR < 18 V
59
44
66
50
74
56
%VBR
VBR < 18 V
%VBR
VBR > 18 V
10.5
8
11.3
9
12
V
V
VBR > 18 V
10.5
805 Vt()hys
806 Ipu(CFI)
Hysteresis at CFI
Vt(CFI)hys = Vt(CFI)hi − Vt(CFI)lo
1
V
Pull-Up Current at CFI
CFP = hi, V(CFI) = 0...VBR − 3 V,
-300
-40
µA
V(CFI) > Vt(CFI)lo
807 Ipd(CFI)
Pull-Down Current at CFI
CFP = lo, V(CFI) = 3 V...VBR,
V(CFI) < Vt(CFI)lo
40
300
µA
808 tpcf
Propagation Delay CFI → CFO V(CFO) = 10 ↔ 90%VCC
2.4
11
0.4
25
10
2
µs
V
809 Vs()lo
810 Isc()lo
811 Ilk()
Saturation Voltage lo at CFO
Short Circuit Current lo in CFO
Leakage Current at CFO
I(CFO) = 1.2 mA
V(CFO) = 0.4 V...VCC
1.2
-10
mA
µA
V
V(CFO) = 0 V...VCC, CFO inaktive
812 Vt()hi
Input Threshold Voltage hi at
CFP
813 Vt()lo
Input Threshold Voltage lo at
CFP
0.8
V
814 Vt()hys
Hysteresis at CFP
Vt(CFP)hys = Vt(CFP)hi − Vt(CFP)lo
V(CFP) = 0.4 V...Vt(CFP)lo
V(CFP) > Vt(CFP)hi
300
500
mV
815
Ipd(CFP) Pull-Down Current at CFP
30
10
168
40
µA
µA
816 tsup
Permissible Spurious Pulse
Width at CFI
No activity triggered
2.2
µs
817 ttrig
818 tsup
Required Pulse Width at CFI
Activity triggered
7
µs
µs
Permissible Spurious Pulse
Width at CFP
No activity triggered
4.5
819 ttrig
Required Pulse Width at CFP
Activity triggered
14
20
µs
820 Ipd(CFI)+ Pull-Down Current at CFI plus
llk(QPx) leakage current at QPx
Switching Regulator VHL, VH
901 VHn Nominal Voltage at VH
CFP = lo, V(CFI) = 3 V...VBR, OEN = lo
µA
LVH = 22 µH, Ri(LVH) < 1.1 Ω, CVH = 1 µF;
6.4
7.7
V
I(VH) = 0...50 mA
iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 9/15
ELECTRICAL CHARACTERISTICS
Operating Conditions:
VBO = 9...30 V, VBR = 9...30 V (both referenced to VN), Tj = -40...125 °C, RSET = 8.2 kΩ ±1%, unless otherwise stated
Item Symbol
No.
Parameter
Conditions
Unit
Min.
Typ.
Max.
902 Ia(VHL)
max. DC Cut-Off Current from
VHL
-200
mA
903 Va(VH)
904 Va()hys
Cut-Off Voltage at VH
Hysteresis at VH
Va(VH) > VHn
6.5
10
7.3
25
7.7
V
150
mV
905
Vs(VHL)
Saturation Voltage at VHL vs.
VBR
I(VHL) = -50 mA
I(VHL) = -150 mA
1.1
3.0
V
V
906
Vf(VHL)
Forward Voltage of Fly-Back
Diode
Vf() = V(GND) − V(VHL);
I(VHL) = -50 mA
1.5
2.9
V
V
I(VHL) = -150 mA
907 Ilk(VHL)
Leakage Current at VHL
VHL = lo, V(VHL) = V(VH)
-20
70
20
µA
%
908 ηVH
Efficiency of VH-switching regula- I(VH) = 50 mA, Ri(LVH) < 1.1 Ω,
tor
V(VBR) = 12...30 V
Series Regulator VCC
A01 VCCn
A02 CVCC
Nominal Voltage at VCC
I(VCC) = -50...0 mA, VH = VHn
4.75
150
5
5.25
1
V
Required Capacitor at VCC vs.
GND
nF
A03 RiCVCC
Maximum Permissible Internal
Resisitance of capacitor at VCC
Ω
A04 VCCon
A05 VCCoff
A06 VCChys
VCC Monitor Threshold hi
VCC Monitor Threshold lo
Hysteresis
90
83
50
99
95
%VCCn
%VCCn
mV
Decreasing Voltage at VCC
VCChys = VCCon − VCCoff
150
3.3
Series Regulator VCC3
B01 VCC3n
B02 CVCC3
Nominal Voltage at VCC3
I(VCC3) = -50...0 mA, VH = VHn
3.1
3.5
V
Required Capacitor at VCC3 vs.
GND
150
nF
B03 RiCVCC3 Maximum Permissible Internal
Resisitance of capacitor at VCC3
1
Ω
B04 VCC3on
VCC3 Monitor Threshold hi
90
83
50
98
95
%
VCC3n
B05 VCC3off
VCC3 Monitor Threshold lo
Decreasing Voltage at VCC3
%
VCC3n
B06 VCC3hys Hysteresis
VCC3hys = VCC3on − VCC3off
150
2
mV
Oscillator
C01
fos
Oscillator Frequency
1.2
1.5
2.75
2.3
MHz
MHz
Tj = 27 °C
Reference and Bias
D01 V(ISET)
D02 I(ISET)
D03 rIbeg
Voltage at ISET
Tj = 27 °C
1.16
-1.1
1.22
-0.65
800
1.28
V
Current in ISET
V(ISET) = 0 V, Tj = 27 °C
-0.25
mA
Transmission Ratio for driver
output current limitation
Imax(QP1) = Imax(QP2) = Imax(QN1) =
Imax(QN2) = I(ISET) ∗ rIbeg,
RSET = 5.1...20 kΩ
iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 10/15
DESCRIPTION OF FUNCTIONS
Overload detection
tion. This integrator is an 8-bit counter which is up-
To protect the device against excessive power dissipa- dated together with the oscillator clock. If an overload
tion due to high currents the switches are clocked if an is detected on one channel the counter is raised by 1;
overload occurs. If a short circuit is detected, i.e. if the an overload on both channels increases the counter
voltage at the switch output overshoots or undershoots value by 2. If no overload is apparent the counter is
Overload Detection Threshold off (cf. Electrical Char- reduced by 1 every 10 clock pulses. Provided that the
acteristics Nos. 104 and 204), the switches are shut time during which excessive current flows does not ex-
down for a typical 50 ms (cf. Electrical Characteristics ceed the value stipulated by Electrical Characteristics
No. 302) and the current flow thus interrupted.
No. 301, a maximum duty cycle – without deactiva-
tion of the switches – of 1:10 results if one channel
is overloaded; if both channels signal an overload this
changes to 1:5. Only when these ratios are exceeded
can the counter achieve its maximum value, this then
generating an error message at NOVL and deactivat-
ing the switches.
VBR
NUVD
NOVL
OEN
Qyx
tuvcl
toldly
tolcl
Configuring the switches
The various functions of the switches are determined
by pins QCFG1 and QCFG2. A voltage at the QCFG
pins which is lower than Va()lo deactivates the relevant
high-side switches; with a voltage higher than Va()hi
the relevant low-side switches are deactivated. Both
high-side and low-side switches are activated in the
open-circuit voltage range (pin open).
Figure 1: Permanent short circuit
The level of power dissipation is dependent on the
current and the time during which this current flows.
A current which fails to trigger the overload detec-
tion is not critical; high current can also be tolerated
for a short period and with low repeat rates. This is
particularly important when switching capacitive loads
(charge/discharge currents).
Valo()hys
QPx active
VBR
NUVD
NOVL
OEN
Vahi()hys
QNx active
INx
Valo()
Vahi()
V(QCNFx)
Qyx
Off
Integrator
Figure 3: Levels at QCFG1/QCFG2 and switch activa-
tion
tuvcl
tolcl
Figure 2: Overload
Pull-up and pull-down currents
The pull-down currents at pins IN1, IN2, INV1 and
So that this is possible a shared back-end integrator CFP are two-stage with switching thresholds Vt()hi and
follows the switches for the purpose of overload detec- Vt()lo (cf. Electrical Characteristics Nos. 604 and 815).
iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 11/15
CHANNEL 2
IN2 QCFG2 OEN QN2 QP2
Function tables
X
L
H
L
H
L
H
X
Z
Z
H
H
L
L
off
on
off
off
off
off
on
off
off
on
off
on
off
off
CHANNEL 1
IN1 QCFG1 INV OEN QN1 QP1
H
H
H
H
H
H
X
L
H
L
H
L
H
L
X
Z
Z
Z
Z
H
H
H
H
L
X
L
L
H
H
L
L
off
on
off
off
on
off
off
off
off
off
on
on
off
off
off
on
on
off
off
on
on
off
off
off
off
off
H
H
H
H
H
H
H
H
H
H
H
H
L
Table 2: Function table Channel 2
L
FEEDBACK CHANNEL
CFI CFP
H
H
L
L
H
H
CFO
H
L
H
H
L
H
L
H
L
Z
L
L
Z
H
L
L
L
H
L
L
Table 1: Function table Channel 1
Table 3: Function table Feedback Channel
iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 12/15
APPLICATION NOTES
DVN:
General purpose diode,
high reverse voltage
Figure 4 shows recommended protective circuitry
against reverse bias and transients on the transmis-
sion line; suggested values as follows:
RCFI:
RQxx:
RVB:
50 Ω
5 Ω
> 20 Ω
CQx:
CVB:
22 nF
1 µF
Pins GND and VN must not be externally con-
nected, otherwise with reverse bias intolerably
high current may flow!
CVBO:
100 nF
DQx, DVBO: High speed diodes (eg. BAS16)
LVH
CVH
RSET
1uF
22uH
..50mA
VH
VHL
ISET
VCC
VBR
VCC3
CVCC
CVCC3
NUVD
VCC3
VCC VBR
Undervoltage
Overtemp.
Overload
RVB
NOVL
VCC3
VBO
UB
Q1
HS1
CVBO
PRG1
QP1 RQP1
QN1
IN1
RQN1
LS1
POL1
DVBO
VCC3
CQ1
DQ1
HS2
LS2
PRG2
QP2 RQP2
QN2
Q2
M
IN2
RQN2
VN
DQ2
OEN
DVN
VN>VBO
GND
VBR
VN
RCFI
CFI
CFO
CFP
CFI
=1
Figure 4: Recommended external protective circuitry for differential push-pull operation
iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 13/15
DEMO BOARD
iC-DL comes with a demo board for test purposes. Figures 5 and 6 show both the schematic and the component
side of the demo board.
L1
VH
C4
VHL
VHL
VH
22uH
1uF
VCC
VCC
VCC3
VCC3
U1
21
VH
20
D6
RD
D5
RD
VHL
iC-DI
VCC
C6
100nF
C5
100nF
R1
22
VB
VBR
22
23
19
VB
VBR
DCDC
C3
C2
C1
VCC3
CONVERTER
R3
1k
R2
1k
1uF
100nF
100nF
BAS16_02L
D1
NUVD
NOVL
9
8
NUVD
NOVL
UVolt
NUVD
VNI
TEMP
LOAD
NOVL
18
VBO
PRG1
PRG1
IN1
4
3
2
PRG1
IN1
R5
QP1 17
QN1 16
QP1
QN1
IN1
VQ1
VQ1
VQ2
4.7
CHANNEL1
R6
C7
22nF
INV1
INV1
INV1
4.7
BAS16_02L
D2
PRG2
IN2
PRG2
IN2
5
6
PRG2
IN2
R7
13
QP2
QP2
QN2
VQ2
4.7
CHANNEL2
R8
14
15
QN2
VN
C8
4.7
22nF
BAS16_02L
OEN
CFO
CFP
OEN
CFO
CFP
7
OEN
D3
VNI
10 CFO
11 CFP
VBR
VN
C9
4.7nF
=1
R9
1k
CFI
CFI 12
CFI
VN
CFI_I
1
ISET
ISET
BIAS
GND
D4
BYS10-45
VNI
VN
R4
8.2k
24
EPAD
GND
GND
Figure 5: Schematic of the demo board
Figure 6: Demo board (component side)
iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 14/15
This specification is for a newly developed product. iC-Haus therefore reserves the right to change or update, without notice, any information contained herein,
design and specification; and to discontinue or limit production or distribution of any product versions. Please contact iC-Haus to ascertain the current data.
Copying – even as an excerpt – is only permitted with iC-Haus approval in writing and precise reference to source.
iC-Haus does not warrant the accuracy, completeness or timeliness of the specification on this site and does not assume liability for any errors or omissions
in the materials. The data specified is intended solely for the purpose of product description. No representations or warranties, either express or implied, of
merchantability, fitness for a particular purpose or of any other nature are made hereunder with respect to information/specification or the products to which
information refers and no guarantee with respect to compliance to the intended use is given. In particular, this also applies to the stated possible applications or
areas of applications of the product.
iC-Haus conveys no patent, copyright, mask work right or other trade mark right to this product. iC-Haus assumes no liability for any patent and/or other trade
mark rights of a third party resulting from processing or handling of the product and/or any other use of the product.
As a general rule our developments, IPs, principle circuitry and range of Integrated Circuits are suitable and specifically designed for appropriate use in technical
applications, such as in devices, systems and any kind of technical equipment, in so far as they do not infringe existing patent rights. In principle the range of
use is limitless in a technical sense and refers to the products listed in the inventory of goods compiled for the 2008 and following export trade statistics issued
annually by the Bureau of Statistics in Wiesbaden, for example, or to any product in the product catalogue published for the 2007 and following exhibitions in
Hanover (Hannover-Messe).
We understand suitable application of our published designs to be state-of-the-art technology which can no longer be classed as inventive under the stipulations
of patent law. Our explicit application notes are to be treated only as mere examples of the many possible and extremely advantageous uses our products can
be put to.
iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 15/15
ORDERING INFORMATION
Type
iC-DI
Package
Order Designation
QFN24 4 x 4 mm²
Evaluation Board
iC-DI QFN24
iC-DI EVAL DI1D
For technical support, information about prices and terms of delivery please contact:
iC-Haus GmbH
Tel.: +49 (61 35) 92 92-0
Am Kuemmerling 18
D-55294 Bodenheim
GERMANY
Fax: +49 (61 35) 92 92-192
Web: http://www.ichaus.com
E-Mail: sales@ichaus.com
Appointed local distributors: http://www.ichaus.de/support_distributors.php
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