IC-OR-BMST [ICHAUS]

5-ELEMENT MONOLITHIC PHOTODIODES ARRAY; 5元单片光二极管阵列
IC-OR-BMST
型号: IC-OR-BMST
厂家: IC-HAUS GMBH    IC-HAUS GMBH
描述:

5-ELEMENT MONOLITHIC PHOTODIODES ARRAY
5元单片光二极管阵列

二极管
文件: 总5页 (文件大小:103K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
iC-OR  
5-ELEMENT MONOLITHIC PHOTODIODES ARRAY  
FEATURES  
APPLICATIONS  
Monolithic integrated photodiodes  
Excellent matching  
Photodiode Array for  
Incremental Encoders  
High sensitivity for visible light and near infrared  
Low dark currents  
Element size 0.95 × 0.74mm2  
(DZ: 2.0 × 0.74mm2)  
Compatible to standard code wheels  
Option: extended temperature range of -25..125°C  
PACKAGES  
customized COB  
(chip size 2.46mm × 3.24mm)  
BLOCK DIAGRAM  
DPB  
DPA  
DNA  
DNB  
DZ  
iC-OR  
AGND  
©1997  
Rev A1  
iC-Haus GmbH  
Integrated Circuits  
Am Kuemmerling 18, D-55294 Bodenheim  
Tel +49-6135-9292-0  
Fax +49-6135-9292-192  
http://www.ichaus.com  
iC-OR  
5-ELEMENT MONOLITHIC PHOTODIODES ARRAY  
Rev A1, Page 2/5  
DESCRIPTION  
The device iC-OR is a monolithic integrated photodiodes array for incremental encoders. The array  
comprises five photodiodes, two of which for differential evaluation each for track A and track B and one  
for constant-light evaluation of index track Z.  
Due to the minimized dark-currents in the nA range, the operating temperature is extended up to 125°C.  
The iC-OR package design might be SMD made to customers specification; samples are available in a 14  
terminal chip carrier.  
CHIP LAYOUT  
PHYSICAL DIMENSIONS (in µm)  
iC-OR  
5-ELEMENT MONOLITHIC PHOTODIODES ARRAY  
Rev A1, Page 3/5  
PACKAGES BLCC OVC (for samples only)  
PHYSICAL DIMENSIONS (in mm, mil)  
(top view)  
(see iC-OV data sheet for complete dimensions)  
PIN FUNCTIONS  
No. Name Function  
1
2
3
4
5
6
7
8
9
n.c.  
n.c.  
n.c.  
n.c.  
n.c.  
n.c.  
n.c.  
n.c.  
AGND Common Anode, Ground  
10 DNA  
11 DPA  
12 DNB  
13 DPB  
14 DZ  
Cathode Photodiode DNA  
Cathode Photodiode DPA  
Cathode Photodiode DNB  
Cathode Photodiode DPB  
Cathode Photodiode DZ  
iC-OR  
5-ELEMENT MONOLITHIC PHOTODIODES ARRAY  
Rev A1, Page 4/5  
ABSOLUTE MAXIMUM RATINGS  
Values beyond which damage may occur; device operation is not guaranteed.  
Item Symbol Parameter  
Conditions  
Fig.  
Unit  
Min.  
Max.  
G001 Vr()  
Reverse Voltage at DPA, DPB, DNA, Ir< 10nA, Tj= 25°C  
25  
V
DNB, DZ  
TG1 Pmax  
Max. Power Dissipation  
Ta= 70°C  
150  
mW  
THERMAL DATA  
Operating Conditions:  
Item Symbol Parameter  
Conditions  
Fig.  
Unit  
Min.  
-25  
Typ.  
Max.  
T1 Ta  
Operating Ambient Temperature  
BLCC OVC package  
90  
°C  
Range  
(extended temperature range on  
request)  
ELECTRICAL CHARACTERISTICS  
Operating Conditions: λ= 850nm, Vr= 5V, Tj= -25..125°C, unless otherwise noted.  
Item Symbol Parameter  
Conditions  
Tj  
°C  
Fig.  
Unit  
Min.  
Typ.  
Max.  
Total Device  
001 S(λ)max Spectral Sensitivity  
λ= 850nm  
0.5  
A/W  
nm  
002 Se(λ)  
Range of Spectral Sensitivity  
Se(λ)= 0.1 × S(λ)max  
500  
1050  
Photodiodes DPA, DNA, DPA, DPB  
101 Aph()  
102 Ierr()  
Radiant Sensitive Area  
Dark Current  
0.95 × 0.74  
mm²  
Ee= 0mW/cm2  
-25  
27  
85  
0.02  
0.06  
0.30  
30  
nA  
nA  
nA  
nA  
125  
103 Iph()  
104 tr()  
105 tf()  
Photocurrent  
Ee= 0.1mW/cm2  
RL= 1k, Iph= 100µA  
RL= 1k, Iph= 100µA  
Vr= 0V  
0.35  
0.9  
0.9  
60  
µA  
µs  
µs  
pF  
Photo-current Rise Time  
Photo-current Fall Time  
Capacitance  
106 C0()  
All voltages are referenced to ground unless otherwise noted.  
All currents into the device pins are positive; all currents out of the device pins are negative.  
iC-OR  
5-ELEMENT MONOLITHIC PHOTODIODES ARRAY  
Rev A1, Page 5/5  
ELECTRICAL CHARACTERISTICS  
Operating Conditions: λ= 850nm, Vr= 5V, Tj= -25..125°C, unless otherwise noted.  
Item Symbol Parameter  
Conditions  
Tj  
°C  
Fig.  
Unit  
Min.  
Typ.  
Max.  
Photodiode DZ  
201 Aph()  
202 Ierr()  
Radiant Sensitive Area  
2.00 × 0.74  
mm²  
Dark Current  
Ee= 0mW/cm2  
-25  
27  
85  
0.04  
0.12  
0.60  
60  
nA  
nA  
nA  
nA  
125  
203 Iph()  
204 tr()  
205 tf()  
Photocurrent  
Ee= 0.1mW/cm2  
RL= 1k, Iph= 100µA  
RL= 1k, Iph= 100µA  
Vr= 0V  
0.7  
0.9  
0.9  
120  
µA  
µs  
µs  
pF  
Photo-current Rise Time  
Photo-current Fall Time  
Capacitance  
206 C0()  
ORDERING INFORMATION  
Type  
Package  
BLCC OVC  
Order designation  
iC-OR  
iC-OR  
iC-OR-BLCC OVC (for samples only)  
customized COB iC-OR-BLCC type, iC-OR-BMST type  
For information about prices, terms of delivery, options for other case types, etc., please contact:  
iC-Haus GmbH  
Tel +49-6135-9292-0  
Fax +49-6135-9292-192  
http://www.ichaus.com  
Am Kuemmerling 18  
D-55294 Bodenheim  
GERMANY  
This specification is for a newly developed product. iC-Haus therefore reserves the right to modify data without further notice. Please contact  
us to ascertain the current data. The data specified is intended solely for the purpose of product description and is not to be deemed  
guaranteed in a legal sense. Any claims for damage against us - regardless of the legal basis - are excluded unless we are guilty of  
premeditation or gross negligence.  
We do not assume any guarantee that the specified circuits or procedures are free of copyrights of third parties.  
Copying - even as an excerpt - is only permitted with the approval of the publisher and precise reference to source.  

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