IS62LV1024L-45BI [ICSI]

128K x 8 LOW POWER AND LOW Vcc; 128K ×8低功耗和低Vcc的
IS62LV1024L-45BI
型号: IS62LV1024L-45BI
厂家: INTEGRATED CIRCUIT SOLUTION INC    INTEGRATED CIRCUIT SOLUTION INC
描述:

128K x 8 LOW POWER AND LOW Vcc
128K ×8低功耗和低Vcc的

存储 内存集成电路 静态存储器
文件: 总10页 (文件大小:132K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IS62LV1024L  
IS62LV1024LL  
128K x 8 LOW POWER and LOW Vcc  
CMOS STATIC RAM  
ꢀEATURES  
DESCRIPTION  
The ICSI IS62LV1024L and IS62LV1024LL are low power  
and low Vcc,131,072-word by 8-bit CMOS static RAMs. They  
are fabricated using ICSI's high-performance CMOS technol-  
ogy. This highly reliable process coupled with innovative circuit  
design techniques, yields higher performance and low power  
consumption devices.  
• Access times of 45, 55, and 70 ns  
• Low active power: 60 mW (typical)  
• Low standby power: 15 µW (typical) CMOS  
standby  
• Low data retention voltage: 2V (min.)  
• Available in Low Power (-L) and  
Ultra Low Power (-LL)  
When CE1 is HIGH or CE2 is LOW (deselected), the device  
assumes a standby mode at which the power dissipation can  
be reduced by using CMOS input levels.  
• Output Enable (OE) and two Chip Enable  
(CE1 and CE2) inputs for ease in applications  
Easy memory expansion is provided by using two Chip Enable  
inputs, CE1 and CE2. The active LOW Write Enable (WE)  
controls both writing and reading of the memory.  
• TTL compatible inputs and outputs  
• Single 2.7V to 3.6V power supply  
The IS62LV1024L and IS62LV1024LL are available in 32-pin  
8*20mm TSOP-1, 8*13.4mm TSOP-1, 450mil SOP and 48-pin  
6*8mm Tꢀ-BGA.  
ꢀUNCTIONAL BLOCK DIAGRAM  
512 X 2048  
MEMORY ARRAY  
A0-A16  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE1  
CE2  
CONTROL  
CIRCUIT  
OE  
WE  
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors  
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.  
Integrated Circuit Solution Inc.  
LPSR018-0D 07/06/2001  
1
IS62LV1024L/LL  
PIN CONꢀIGURATION  
32-Pin SOP  
PIN CONꢀIGURATION  
32-Pin 8x20mm TSOP-1 and 8x13.4mm TSOP-1  
NC  
A16  
A14  
A12  
A7  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
VCC  
A15  
CE2  
WE  
A13  
A8  
A11  
A9  
A8  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE  
2
2
A10  
CE1  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
3
3
4
A13  
WE  
CE2  
A15  
VCC  
NC  
A16  
A14  
A12  
A7  
4
5
5
A6  
6
6
A5  
7
A9  
7
A4  
8
A11  
OE  
8
A3  
9
9
A2  
10  
11  
12  
13  
14  
15  
16  
A10  
CE1  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
10  
11  
12  
13  
14  
15  
16  
A1  
A0  
I/O0  
I/O1  
I/O2  
GND  
A6  
A5  
A4  
A1  
A2  
A3  
48-Pin 6x8mm Tꢀ-BGA  
PIN DESCRIPTIONS  
A0-A16  
CE1  
Address Inputs  
Chip Enable 1 Input  
Chip Enable 2 Input  
Output Enable Input  
Write Enable Input  
Input/Output  
1
2
3
4
5
6
CE2  
CE2  
WE  
NC  
A3  
A4  
A5  
A6  
A7  
A0  
I/O  
A1  
A2  
A8  
I/O  
A
B
C
D
E
F
OE  
5
1
WE  
I/O  
I/O  
2
6
I/O0-I/O7  
GND  
Vcc  
Vcc  
NCNo onnectionC  
GND  
Vcc  
Power  
GND  
Ground  
I/O  
7
NC  
CE1  
A11  
NC  
A16  
A12  
I/O  
3
I/O  
8
OE  
A15  
A13  
I/O  
4
G
H
A9  
A10  
A14  
OPERATING RANGE  
Range  
Ambient Temperature  
VCC  
Commercial  
0°C to +70°C  
2.7V to 3.6V  
2.7V to 3.6V  
Industrial  
–40°C to +85°C  
2
Integrated Circuit Solution Inc.  
LPSR018-0D 07/06/2001  
IS62LV1024L/LL  
TRUTH TABLE  
Mode  
WE CE1 CE2 OE  
I/O Operation  
Vcc Current  
Not Selected  
(Power-down)  
X
X
H
X
X
L
X
X
High-Z  
High-Z  
ISB1, ISB2  
ISB1, ISB2  
Output Disabled H  
L
L
L
H
H
H
H
L
High-Z  
DOUT  
DIN  
ICC  
ICC  
ICC  
Read  
Write  
H
L
X
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol Parameter  
Value  
Unit  
V
VTERM  
VCC  
Terminal Voltage with Respect to GND  
–0.5 to Vcc + 0.5  
–0.3 to +4.6  
–40 to +85  
–65 to +150  
0.7  
Vcc related to GND  
Temperature Under Bias  
Storage Temperature  
Power Dissipation  
V
TBIAS  
TSTG  
PT  
°C  
°C  
W
Notes:  
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause  
permanent damage to the device. This is a stress rating only and functional operation of the  
device at these or any other conditions above those indicated in the operational sections of  
this specification is not implied. Exposure to absolute maximum rating conditions for  
extended periods may affect reliability.  
CAPACITANCE(1,2)  
Symbol  
CIN  
Parameter  
Conditions  
VIN = 0V  
Max.  
Unit  
pꢀ  
Input Capacitance  
Output Capacitance  
6
8
COUT  
VOUT = 0V  
pꢀ  
Notes:  
1. Tested initially and after any design or process changes that may affect these parameters.  
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.0V.  
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)  
Symbol Parameter  
Test Conditions  
Min.  
Max.  
Unit  
VOH  
VOL  
VIH  
VIL  
ILI  
Output HIGH Voltage  
VCC = Min., IOH = –1.0 mA  
VCC = Min., IOL = 2.1 mA  
2.2  
—
—
V
V
Output LOW Voltage  
Input HIGH Voltage  
Input LOW Voltage(1)  
Input Leakage  
0.4  
2.2  
–0.3  
–1  
VCC + 0.3  
V
0.4  
1
V
GND VIN VCC  
µA  
µA  
ILO  
Output Leakage  
GND VOUT VCC  
–1  
1
Notes:  
1. VIL = –3.0V for pulse width less than 10 ns.  
Integrated Circuit Solution Inc.  
LPSR018-0D 07/06/2001  
3
IS62LV1024L/LL  
IS62LV1024L POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)  
-45L ns  
-55L ns  
-70L ns  
Symbol Parameter  
Test Conditions  
Min. Max.  
Min. Max.  
Min. Max.  
Unit  
ICC  
Vcc Dynamic Operating  
VCC = Max., CE = VIL  
IOUT = 0 mA, f = fMAX  
Com.  
Ind.  
—
—
40  
45  
—
—
35  
40  
—
—
30  
35  
mA  
Supply Current  
ISB1  
TTL Standby Current  
(TTL Inputs)  
VCC = Max.,  
Com.  
—
—
0.3  
0.4  
—
—
0.3  
0.4  
—
—
0.3  
0.4  
mA  
µA  
VIN = VIH or VIL, CE1  
VIH Ind.  
or CE2  
VIL, f = 0  
ISB2  
CMOS Standby  
VCC = Max., f = 0  
Com.  
Ind.  
—
—
50  
75  
—
—
50  
75  
—
—
50  
75  
Current (CMOS Inputs)  
CE1  
VCC – 0.2V,  
CE2  
0.2V,  
or VIN  
VCC – 0.2V, VIN 0.2V  
Note:  
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.  
IS62LV1024LL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)  
-45LL ns  
-55LL ns  
-70LL ns  
Symbol Parameter  
Test Conditions  
Min. Max.  
Min. Max.  
Min. Max.  
Unit  
ICC  
Vcc Dynamic Operating  
VCC = Max., CE = VIL  
IOUT = 0 mA, f = fMAX  
Com.  
Ind.  
—
—
40  
45  
—
—
35  
40  
—
—
30  
35  
mA  
Supply Current  
ISB1  
TTL Standby Current  
(TTL Inputs)  
VCC = Max.,  
Com.  
—
—
0.2  
0.3  
—
—
0.2  
0.3  
—
—
0.2  
0.3  
mA  
µA  
VIN = VIH or VIL, CE1  
VIH Ind.  
or CE2  
VIL, f = 0  
ISB2  
CMOS Standby  
VCC = Max., f = 0  
Com.  
Ind.  
—
—
5
—
—
5
—
—
5
Current (CMOS Inputs)  
CE1  
VCC – 0.2V,  
10  
10  
10  
CE2  
0.2V,  
or VIN  
VCC – 0.2V, VIN 0.2V  
Note:  
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.  
4
Integrated Circuit Solution Inc.  
LPSR018-0D 07/06/2001  
IS62LV1024L/LL  
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)  
-45  
-55  
-70  
Symbol Parameter  
Min.  
45  
—
10  
—
—
—
0
Max.  
—
Min.  
55  
—
10  
—
—
—
5
Max.  
—
Min.  
70  
—
10  
—
—
—
5
Max.  
—
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tRC  
Read Cycle Time  
tAA  
Address Access Time  
Output Hold Time  
CE1 Access Time  
CE2 Access Time  
OE Access Time  
45  
—
55  
—
70  
—
tOHA  
tACE1  
tACE2  
tDOE  
45  
45  
20  
—
55  
55  
25  
—
70  
70  
35  
—
(2)  
tLZOE  
OE to Low-Z Output  
OE to High-Z Output  
(2)  
tHZOE  
0
15  
—
0
20  
—
0
25  
—
tLZCE1(2) CE1 to Low-Z Output  
5
7
10  
10  
0
tLZCE2(2) CE2 to Low-Z Output  
5
—
7
—
—
(2)  
tHZCE  
CE1 or CE2 to High-Z Output  
0
15  
0
20  
25  
Notes:  
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0.4V to 2.2V  
and output loading specified in 7igure 1.  
2. Tested with the load in 7igure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.  
AC TEST CONDITIONS  
Parameter  
Unit  
0.4V to 2.2V  
5 ns  
Input Pulse Level  
Input Rise and ꢀall Times  
Input and Output Timing  
and Reference Level  
1.5V  
Output Load  
See ꢀigures 1  
AC TEST LOADS  
1 TTL  
1 TTL  
OUTPUT  
OUTPUT  
100 pF  
Including  
jig and  
5 pF  
Including  
jig and  
scope  
scope  
)igure 1.  
Integrated Circuit Solution Inc.  
LPSR018-0D 07/06/2001  
)igure 2.  
5
IS62LV1024L/LL  
AC WAVEꢀORMS  
READ CYCLE NO. 1(1,2)  
t
RC  
ADDRESS  
DOUT  
t
AA  
t
OHA  
t
OHA  
DATA VALID  
READ CYCLE NO. 2(1,3)  
t
RC  
ADDRESS  
OE  
t
AA  
t
OHA  
t
HZOE  
t
DOE  
t
LZOE  
CE1  
t
ACE1/tACE2  
CE2  
tLZCE1/  
tLZCE2  
t
HZCE  
HIGH-Z  
DOUT  
DATA VALID  
Notes:  
1. WE is HIGH for a Read Cycle.  
2. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH.  
3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions.  
6
Integrated Circuit Solution Inc.  
LPSR018-0D 07/06/2001  
IS62LV1024L/LL  
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range, Standard and Low  
Power)  
-45  
-55  
-70  
Symbol Parameter  
Min.  
45  
35  
35  
35  
0
Max.  
—
Min.  
55  
50  
50  
50  
0
Max.  
—
Min.  
70  
60  
60  
60  
0
Max.  
—
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tWC  
Write Cycle Time  
tSCE1  
tSCE2  
tAW  
CE1 to Write End  
—
—
—
CE2 to Write End  
—
—
—
Address Setup Time to Write End  
Address Hold from Write End  
Address Setup Time  
—
—
—
tHA  
—
—
—
tSA  
0
—
0
—
0
—
(4)  
tPWE  
WE Pulse Width  
35  
25  
0
—
40  
25  
0
—
55  
30  
0
—
tSD  
Data Setup to Write End  
Data Hold from Write End  
WE LOW to High-Z Output  
WE HIGH to Low-Z Output  
—
—
—
tHD  
—
—
—
(2)  
tHZWE  
—
5
15  
—
—
5
20  
—
0
25  
—
(2)  
tLZWE  
5
Notes:  
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0.4V to 2.2V  
and output loading specified in 7igure 1.  
2. Tested with the load in 7igure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.  
3. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to  
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the  
rising or falling edge of the signal that terminates the Write.  
4. Tested with OE HIGH.  
AC WAVEꢀORMS  
WRITE CYCLE NO. 1 (WE Controlled)(1,2)  
t
WC  
ADDRESS  
CE1  
t
HA  
t
SCE1  
t
SCE2  
CE2  
t
AW  
(4)  
t
PWE  
WE  
DOUT  
DIN  
t
SA  
t
HZWE  
t
LZWE  
HIGH-Z  
DATA UNDEFINED  
t
SD  
t
HD  
DATA-IN VALID  
Integrated Circuit Solution Inc.  
LPSR018-0D 07/06/2001  
7
IS62LV1024L/LL  
WRITE CYCLE NO. 2 (CE1, CE2 Controlled)(1,2)  
t
WC  
ADDRESS  
t
SA  
tHA  
t
SCE1  
CE1  
CE2  
t
SCE2  
t
AW  
(4)  
t
PWE  
WE  
DOUT  
DIN  
t
HZWE  
tLZWE  
HIGH-Z  
DATA UNDEFINED  
t
HD  
t
SD  
DATA-IN VALID  
Notes:  
1. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to  
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the  
rising or falling edge of the signal that terminates the Write.  
2. I/O will assume the High-Z state if OE = VIH.  
DATA RETENTION SWITCHING CHARACTERISTICS  
Symbol  
VDR  
Parameter  
Test Condition  
Min.  
Max.  
Unit  
Vcc for Data Retention  
Data Retention Current  
See Data Retention Waveform  
2.0  
3.6  
V
IDR  
Vcc = 2.0V, CE1  
Vcc – 0.2V  
Com. (-L)  
Com. (-LL)  
Ind. (-L)  
—
—
—
—
30  
5
µA  
µA  
µA  
µA  
50  
10  
Ind. (-LL)  
tSDR  
tRDR  
Data Retention Setup Time  
Recovery Time  
See Data Retention Waveform  
See Data Retention Waveform  
0
—
—
ns  
ns  
tRC  
DATA RETENTION WAVEꢀORM (CE1 Controlled)  
t
Data Retention Mode  
t
RDR  
SDR  
V
V
CC  
DR  
3.0V  
2.2V  
CE1 V  
- 0.2V  
CC  
CE1  
GND  
8
Integrated Circuit Solution Inc.  
LPSR018-0D 07/06/2001  
IS62LV1024L/LL  
DATA RETENTION WAVEꢀORM (CE2 Controlled)  
Data Retention Mode  
V
CC  
3.0V  
2.2V  
t
t
RDR  
SDR  
CE2  
V
DR  
CE2 0.2V  
0.4V  
GND  
IS62LV1024L  
IS62LV1024L  
ORDERING INꢀORMATION  
Commercial Range: 0°C to +70°C  
ORDERING INꢀORMATION  
Industrial Range: –40°C to +85°C  
Speed (nsꢀ Order Part No.  
Package  
Speed (nsꢀ Order Part No.  
Package  
45  
55  
70  
IS62LV1024L-45Q  
IS62LV1024L-45T  
IS62LV1024L-45H  
IS62LV1024L-45B  
450mil SOP  
45  
55  
70  
IS62LV1024L-45QI  
IS62LV1024L-45TI  
IS62LV1024L-45HI  
IS62LV1024L-45BI  
450mil SOP  
8*20mm TSOP-1  
8*13.4mm TSOP-1  
6*8mm Tꢀ-BGA  
8*20mm TSOP-1  
8*13.4mm TSOP-1  
6*8mm Tꢀ-BGA  
IS62LV1024L-55Q  
IS62LV1024L-55T  
IS62LV1024L-55H  
IS62LV1024L-55B  
450mil SOP  
IS62LV1024L-55QI  
IS62LV1024L-55TI  
IS62LV1024L-55HI  
IS62LV1024L-55BI  
450mil SOP  
8*20mm TSOP-1  
8*13.4mm TSOP-1  
6*8mm Tꢀ-BGA  
8*20mm TSOP-1  
8*13.4mm TSOP-1  
6*8mm Tꢀ-BGA  
IS62LV1024L-70Q  
IS62LV1024L-70T  
IS62LV1024L-70H  
IS62LV1024L-70B  
450mil SOP  
IS62LV1024L-70QI  
IS62LV1024L-70TI  
IS62LV1024L-70HI  
IS62LV1024L-70BI  
450mil SOP  
8*20mm TSOP-1  
8*13.4mm TSOP-1  
6*8mm Tꢀ-BGA  
8*20mm TSOP-1  
8*13.4mm TSOP-1  
6*8mm Tꢀ-BGA  
Integrated Circuit Solution Inc.  
LPSR018-0D 07/06/2001  
9
IS62LV1024L/LL  
IS62LV1024LL  
IS62LV1024LL  
ORDERING INꢀORMATION  
Commercial Range: 0°C to +70°C  
ORDERING INꢀORMATION  
Industrial Range: –40°C to +85°C  
Speed (nsꢀ Order Part No.  
Package  
Speed (nsꢀ Order Part No.  
Package  
45  
55  
70  
IS62LV1024LL-45Q  
IS62LV1024LL-45T  
IS62LV1024LL-45H  
IS62LV1024LL-45B  
450mil SOP  
45  
55  
70  
IS62LV1024LL-45QI  
IS62LV1024LL-45TI  
IS62LV1024LL-45HI  
IS62LV1024LL-45BI  
450mil SOP  
8*20mm TSOP-1  
8*13.4mm TSOP-1  
6*8mm Tꢀ-BGA  
8*20mm TSOP-1  
8*13.4mm TSOP-1  
6*8mm Tꢀ-BGA  
IS62LV1024LL-55Q  
IS62LV1024LL-55T  
IS62LV1024LL-55H  
IS62LV1024LL-55B  
450mil SOP  
IS62LV1024LL-55QI  
IS62LV1024LL-55TI  
IS62LV1024LL-55HI  
IS62LV1024LL-55BI  
450mil SOP  
8*20mm TSOP-1  
8*13.4mm TSOP-1  
6*8mm Tꢀ-BGA  
8*20mm TSOP-1  
8*13.4mm TSOP-1  
6*8mm Tꢀ-BGA  
IS62LV1024LL-70Q  
IS62LV1024LL-70T  
IS62LV1024LL-70H  
IS62LV1024LL-70B  
450mil SOP  
IS62LV1024LL-70QI  
IS62LV1024LL-70TI  
IS62LV1024LL-70HI  
IS62LV1024LL-70BI  
450mil SOP  
8*20mm TSOP-1  
8*13.4mm TSOP-1  
6*8mm Tꢀ-BGA  
8*20mm TSOP-1  
8*13.4mm TSOP-1  
6*8mm Tꢀ-BGA  
Integrated Circuit Solution Inc.  
HEADQUARTER:  
NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK,  
HSIN-CHU, TAIWAN, R.O.C.  
TEL: 886-3-5780333  
"ax: 886-3-5783000  
BRANCH O""ICE:  
7", NO. 106, SEC. 1, HSIN-TAI 5TH ROAD,  
HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C.  
TEL: 886-2-26962140  
"AX: 886-2-26962252  
http://www.icsi.com.tw  
10  
Integrated Circuit Solution Inc.  
LPSR018-0D 07/06/2001  

相关型号:

IS62LV1024L-45H

128K x 8 LOW POWER AND LOW Vcc
ICSI

IS62LV1024L-45H

Standard SRAM, 128KX8, 45ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32
ISSI

IS62LV1024L-45HI

128K x 8 LOW POWER AND LOW Vcc
ICSI

IS62LV1024L-45HI

Standard SRAM, 128KX8, 45ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32
ISSI

IS62LV1024L-45Q

128K x 8 LOW POWER AND LOW Vcc
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IS62LV1024L-45Q

Standard SRAM, 128KX8, 45ns, CMOS, PDSO32, 0.450 INCH, PLASTIC, SOP-32
ISSI

IS62LV1024L-45QI

128K x 8 LOW POWER AND LOW Vcc
ICSI

IS62LV1024L-45T

128K x 8 LOW POWER AND LOW Vcc
ICSI

IS62LV1024L-45T

Standard SRAM, 128KX8, 45ns, CMOS, PDSO32, TSOP1-32
ISSI

IS62LV1024L-45TI

128K x 8 LOW POWER AND LOW Vcc
ICSI

IS62LV1024L-45TS

Standard SRAM, 128KX8, 45ns, CMOS, PDSO32, TSSOP-32
ISSI

IS62LV1024L-45TSI

Standard SRAM, 128KX8, 45ns, CMOS, PDSO32, TSSOP-32
ISSI