71V25761YSA166BQI_技术文档

128K X 36

IDT71V25761YS/S

3.3VSynchronousSRAMs

2.5V I/O, Pipelined Outputs,

Burst Counter, Single Cycle Deselect

Features

Description

◆

128K x 36 memory configuration

TheIDT71V25761arehigh-speedSRAMsorganizedas128Kx36.

The IDT71V25761 SRAMs contain write, data, address and control

registers. InternallogicallowstheSRAMtogenerateaself-timedwrite

basedupona decisionwhichcanbe leftuntilthe endofthe write cycle.

Theburstmodefeatureoffersthehighestlevelofperformancetothe

systemdesigner,astheIDT71V25761canprovidefourcyclesofdatafor

a single address presented to the SRAM. An internal burst address

counteracceptsthefirstcycleaddressfromtheprocessor,initiatingthe

◆

Supports high system speed:

Commercial:

– 200MHz 3.1ns clock access time

CommercialandIndustrial:

– 183MHz 3.3ns clock access time

– 166MHz 3.5ns clock access time

LBO input selects interleaved or linear burst mode

◆

Self-timedwritecyclewithglobalwritecontrol(GW),bytewrite accesssequence.Thefirstcycleofoutputdatawillbepipelinedforone

enable (BWE), and byte writes (BWx)

3.3V core power supply

Power down controlled by ZZ input

2.5V I/O

Optional - Boundary Scan JTAG Interface (IEEE 1149.1

Compliant)

Packaged in a JEDEC Standard 100-pin plastic thin quad CMOSprocessandarepackagedinaJEDECstandard14mmx20mm

flatpack(TQFP),119ballgridarray(BGA)and165finepitchball 100-pinthinplasticquadflatpack(TQFP)aswellasa119 ballgridarray

cycle before it is available on the next rising clock edge. If burst mode

operationisselected(ADV=LOW),thesubsequentthreecyclesofoutput

datawillbeavailabletotheuseronthenextthreerisingclockedges. The

orderofthesethreeaddressesaredefinedbytheinternalburstcounter

andthe LBO inputpin.

◆

The IDT71V25761 SRAMs utilize IDT’s latest high-performance

◆

grid array

(BGA) and 165 fine pitch ball grid array (fBGA).

PinDescriptionSummary

A0-A17

Address Inputs

Input

Output

Input

I/O

Synchronous

Asynchronous

Synchronous

N/A

Chip Enable

CE

CS

0

, CS

1

Chip Selects

Output Enable

OE

GW

Global Write Enable

Byte Write Enable

Individual Byte Write Selects

Clock

BWE

BW , BW

(1)

1

2

, BW

3

, BW

4

CLK

Burst Address Advance

Address Status (Cache Controller)

Address Status (Processor)

Linear / Interleaved Burst Order

Test Mode Select

Test Data Input

Synchronous

DC

ADV

ADSC

ADSP

LBO

TMS

TDI

Synchronous

N/A

TCK

TDO

TRST

ZZ

Test Clock

Test Data Output

Synchronous

Asynchronous

Synchronous

N/A

JTAG Reset (Optional)

Sleep Mode

I/O

0

-I/O31, I/OP1-I/OP4

DD, VDDQ

SS

Data Input / Output

Core Power, I/O Power

Ground

V

Supply

V

N/A

5297 tbl 01

MAY 2010

1

DSC-5297/05

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

PinDefinitions⁽¹⁾

Symbol

Pin Function

I/O

Active

Description

A0-A17

Address Inputs

I

N/A

Synchronous Address inputs. The address register is triggered by a combination of the rising edge of CLK

and ADSC Low or ADSP Low and CE Low.

Address Status

(Cache Controller)

I

LOW

Synchronous Address Status from Cache Controller. ADSC is an active LOW input that is used to load the

ADSC

ADSP

ADV

address registers with new addresses.

Address Status

(Processor)

Synchronous Address Status from Processor. ADSP is an active LOW input that is used to load the address

registers with new addresses. ADSP is gated by CE.

Burst Address

Advance

Synchronous Address Advance. ADV is an active LOW input that is used to advance the internal burst

counter, controlling burst access after the initial address is loaded. When the input is HIGH the burst counter is

not incremented; that is, there is no address advance.

Byte Write Enable

I

LOW

Synchronous byte write enable gates the byte write inputs BW

then BWx inputs are passed to the next stage in the circuit. If BWE is HIGH then the byte write inputs are

blocked and only GW can initiate a write cycle.

1

-BW . If BWE is LOW at the rising edge of CLK

4

BWE

Individual Byte

Write Enables

Synchronous byte write enables. BW

1

controls I/O0-7, I/OP1, BW2 controls I/O8-15, I/OP2, etc. Any active byte

BW

1

-BW

4

write causes all outputs to be disabled.

Chip Enable

Clock

I

LOW

N/A

Synchronous chip enable. CE is used with CS

0

and CS to enable the IDT71V25761/781. CE also gates ADSP.

1

CE

CLK

This is the clock input. All timing references for the device are made with respect to this input.

CS

GW

0

Chip Select 0

Chip Select 1

HIGH

LOW

Synchronous active HIGH chip select. CS

Synchronous active LOW chip select. CS

0

is used with CE and CS

1

to enable the chip.

1

is used with CE and CS

0 to enable the chip.

1

Global Write

Enable

Synchronous global write enable. This input will write all four 9-bit data bytes when LOW on the rising edge of

CLK. GW supersedes individual byte write enables.

I/O

I/OP1-I/OP4

0

-I/O31

Data Input/Output

I/O

I

N/A

Synchronous data input/output (I/O) pins. Both the data input path and data output path are registered and

triggered by the rising edge of CLK.

Linear Burst Order

LOW

Asynchronous burst order selection input. When LBO is HIGH, the interleaved burst sequence is selected.

When LBO is LOW the Linear burst sequence is selected. LBO is a static input and must not change state

while the device is operating.

LBO

Output Enable

I

LOW

Asynchronous output enable. When OE is LOW the data output drivers are enabled on the I/O pins if the chip

is also selected. When OE is HIGH the I/O pins are in a high-impedance state.

OE

TMS

TDI

Test ModeSelect

Test Data Input

I

N/A

Gives input command for TAP controller. Sampled on rising edge of TDK. This pin has an internal pullup.

Serial input of registers placed between TDI and TDO. Sampled on rising edge of TCK. This pin has an

internal pullup.

Clock input of TAP controller. Each TAP event is clocked. Test inputs are captured on rising edge of TCK,

while test outputs are driven from the falling edge of TCK. This pin has an internal pullup.

TCK

TDO

Test Clock

I

N/A

Serial output of registers placed between TDI and TDO. This output is active depending on the state of the

TAP controller.

Test DataOutput

O

Optional Asynchronous JTAG reset. Can be used to reset the TAP controller, but not required. JTAG reset

occurs automatically at power up and also resets using TMS and TCK per IEEE 1149.1. If not used TRST can

be left floating. This pin has an internal pullup. Only available in BGA package.

JTAG Reset

(Optional)

I

LOW

HIGH

TRST

Asynchronous sleep mode input. ZZ HIGH will gate the CLK internally and power down the IDT71V25761/781

to its lowest power consumption level. Data retention is guaranteed in Sleep Mode.This pin has an internal

pull down.

ZZ

Sleep Mode

V

DD

DDQ

SS

Power Supply

Ground

N/A

3.3V core power supply.

2.5V I/O Supply.

Ground.

V

NC

No Connect

NC pins are not electrically connected to the device.

5297 tbl 02

NOTE:

1. All synchronous inputs must meet specified setup and hold times with respect to CLK.

6.422

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

FunctionalBlockDiagram

6.42

3

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

AbsoluteMaximumRatings⁽¹⁾

RecommendedOperating

TemperatureandSupplyVoltage

Commercial &

Symbol

Rating

Industrial

Unit

Grade

Temperature⁽¹⁾

0°C to +70°C

-40°C to +85°C

V

SS

VDD

VDDQ

(2)

V

TERM

Terminal Voltage with

Respect to GND

-0.5 to +4.6

V

Commercial

Industrial

0V

3.3V±5%

2.5V±5%

(3,6)

(4,6)

(5,6)

V

TERM

Terminal Voltage with

Respect to GND

-0.5 to VDD

-0.5 to VDD +0.5

-0.5 to VDDQ +0.5

-0 to +70

V

5297 tbl 04

NOTES:

1. TA is the "instant on" case temperature.

VTERM

Terminal Voltage with

Respect to GND

VTERM

Terminal Voltage with

Respect to GND

V

RecommendedDCOperating

Conditions

Commercial

^oC

W

Symbol

Parameter

Core Supply Voltage

I/O Supply Voltage

Supply Voltage

Min.

3.135

2.375

0

Typ.

Max.

Unit

V

Operating Temperature

T ⁽⁷⁾

A

V

DD

DDQ

SS

IH

3.3

3.465

2.625

0

Industrial

-40 to +85

Operating Temperature

V

2.5

V

Temperature

Under Bias

-55 to +125

TBIAS

V

0

V

____

Input High Voltage -

Inputs

VDD

+0.3

V

1.7

Storage

-55 to +125

TSTG

Temperature

____

Input High Voltage - I/O

V

IH

1.7

V

DDQ

P

T

Power Dissipation

DC Output Current

2.0

50

+0.3⁽¹⁾

IOUT

mA

VIL

Input Low Voltage

-0.3⁽²⁾

0.7

V

5297 tbl 03

5297 tbl 05

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may 1. VIH (max) = VDDQ + 1.0V for pulse width less than tCYC/2, once per cycle.

cause permanent damage to the device. This is a stress rating only and functional 2. VIL (min) = -1.0V for pulse width less than tCYC/2, once per cycle.

operation of the device at these or any other conditions above those indicated

in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

2. VDD terminals only.

3. VDDQ terminals only.

4. Input terminals only.

5. I/O terminals only.

6. This is a steady-state DC parameter that applies after the power supplies have

ramped up. Power supply sequencing is not necessary; however, the voltage

on any input or I/O pin cannot exceed VDDQ during power supply ramp up.

7. TA is the "instant on" case temperature.

100pinTQFPCapacitance

119BGACapacitance

(TA = +25°C, f = 1.0MHz)

Parameter⁽¹⁾

Input Capacitance

I/O Capacitance

Conditions

IN = 3dV

OUT = 3dV

Max. Unit

Symbol

Parameter⁽¹⁾

Input Capacitance

I/O Capacitance

Conditions

IN = 3dV

Max. Unit

Symbol

CIN

V

7

pF

CIN

V

5

7

pF

CI/O

V

pF

CI/O

VOUT = 3dV

pF

5297 tbl 07

5297 tbl 07a

165fBGACapacitance

(TA = +25°C, f = 1.0MHz)

Symbol

Parameter⁽¹⁾

Input Capacitance

I/O Capacitance

Conditions

IN = 3dV

OUT = 3dV

Max. Unit

CIN

V

7

pF

CI/O

V

pF

5297 tbl 07b

NOTE:

1. This parameter is guaranteed by device characterization, but not production tested.

6.442

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

Pin Configuration – 128K x 36

100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81

1

80

I/OP3

I/O16

I/O17

I/OP2

I/O15

I/O14

2

79

3

78

4

77

VDDQ

5

VSS

76

75

74

73

VSS

6

I/O18

I/O19

I/O20

I/O21

I/O13

I/O12

I/O11

I/O10

7

8

9

72

71

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

VSS

70

69

68

67

66

65

64

VDDQ

I/O22

I/O23

DD/NC⁽¹⁾

I/O9

I/O8

V

SS

NC

VDD

NC

V

DD

ZZ⁽²⁾

V

SS

I/O24

I/O25

63

62

I/O7

I/O6

61

60

59

58

57

56

55

54

53

VDDQ

V

DDQ

SS

VSS

I/O26

I/O27

I/O28

I/O29

I/O

5

4

3

2

VSS

VDDQ

I/O30

I/O31

I/OP4

I/O

1

0

52

51

I/OP1

,

31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50

5297 drw 02

100TQFP

Top View

NOTES:

1. Pin 14 can either be directly connected to VDD, or connected to an input voltage ≥ VIH, or left unconnected.

2. Pin 64 can be left unconnected and the device will always remain in active mode.

6.42

5

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

Pin Configuration – 128K x 36, 119 BGA

1

2

3

4

5

6

7

DDQ

6

4

8

16

DDQ

V

A

B

C

D

E

F

ADSP

ADSC

3

2

9

NC

CS

NC

1

CS

0

7

A

DD

V

12

15

A

16

I/O

P3

I/O

SS

P2

I/O

15

I/O

V

NC

V

17

I/O

18

I/O

13

I/O

14

I/O

CE

OE

DDQ

20

19

I/O

12

I/O

DDQ

10

V

21

I/O

11

I/O

G

H

J

I/O

2

BW

3

BW

ADV

GW

22

I/O

23

I/O

SS

9

I/O

8

I/O

V

DDQ

24

DD

DDQ

7

V

NC

V

NC

SS

V

26

I/O

SS

V

6

I/O

K

L

I/O

CLK

NC

V

I/O

25

I/O

27

28

4

I/O

5

I/O

4

BW

1

BW

DDQ

29

SS

V

SS

V

3

I/O

DDQ

V

M

N

P

R

T

I/O

BWE

30

P4

SS

V

1

A

SS

V

2

I/O

1

I/O

31

I/O

SS

0

A

SS

0

I/O

P1

I/O

V

(1)

NC

5

A

DD

11

13

A

NC

DDQ

V

DD / NC

LBO

(3)

10

A

14

A

NC

A

NC

ZZ

,

(

2)

(2)

(2,4)

DDQ

V

NC/TMS

NC/TDI

NC/TCK NC/TDO

NC/TRST

U

V

5297 drw 04

TopView

NOTES:

1. R5 can either be directly connected to VDD, or connected to an input voltage ≥ VIH, or left unconnected.

2. These pins are NC for the "S" version or the JTAG signal listed for the "SA" version. Note: If NC, these pins can either be tied to VSS, VDD or left floating.

3. T7 can be left unconnected and the device will always remain in active mode.

4. TRST is offered as an optional JTAG Reset if required in the application. If not needed, can be left floating and will internally be pulled to VDD.

6.462

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

Pin Configuration – 128K x 36, 165 fBGA

1

2

3

4

5

6

7

8

9

10

11

(4)

A

B

C

D

E

F

NC

A

7

A

8

NC

CE

1

BW

3

BW

2

CS

1

BWE

GW

ADSC

OE

ADV

ADSP

(4)

NC

A6

CS

0

CLK

A9

NC

BW4

BW

1

I/OP3

I/O17

I/O19

I/O21

NC

V

DDQ

V

SS

DD

SS

V

SS

V

SS

V

SS

V

SS

DD

SS

10

11

V

DDQ

NC

I/OP2

I/O14

I/O12

I/O10

I/O16

I/O18

I/O20

I/O22

NC

V

I/O15

I/O13

I/O11

V

G

H

J

I/O23

VDDQ

V

I/O

NC

I/O

9

I/O8

(1)

(3)

V

DD

NC

V

NC

ZZ

I/O

I/O25

I/O27

I/O29

I/O31

I/OP4

NC

I/O24

I/O26

I/O28

I/O30

NC

V

DDQ

V

DDQ

13

12

7

6

K

L

M

N

P

V

5

4

V

3

2

V

I/O

1

0

(4)

NC/TRST^{(2, 5)}

V

NC

V

NC

I/OP1

(4)

(2)

(4)

NC

A5

A2

NC/TDI

A1

NC/TDO

A

A14

NC

(4)

(2)

R

NC

A4

A3

NC/TMS⁽²⁾

A0

NC/TCK

A

A15

A16

LBO

5297 tbl 17

NOTES:

1. H1 can either be directly connected to VDD, or connected to an input voltage ≥ VIH, or left unconnected.

2. These pins are NC for the "S" version or the JTAG signal listed for the "SA" version. Note: If NC, these pins can either be tied to VSS, VDD or left floating.

3. H11 can be left unconnected and the device will always remain in active mode.

4. Pins P11, N6, B11, A1, R2 and P2 are reserved for 9M, 18M, 36M, 72M, 144M and 288M respectively.

5. TRST is offered as an optional JTAG Reset if required in the application. If not needed, can be left floating and will internally be pulled to VDD.

6.42

7

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

DC Electrical Characteristics Over the Operating

Temperature and Supply Voltage Range (VDD = 3.3V ± 5%)

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

___

|I^LI|

Input Leakage Current

VDD = Max., VIN = 0V to VDD

5

µA

ZZ, LBO and JTAG Input Leakage Current⁽¹⁾

Output Leakage Current

___

|I^LZZ

|

V

DD = Max., VIN = 0V to VDD

OUT = 0V to VDDQ, Device Deselected

OL = +6mA, VDD = Min.

OH = -6mA, VDD = Min.

30

5

µA

V

|I^LO|

V

VOL

Output Low Voltage

I

0.4

___

VOH

Output High Voltage

I

2.0

V

5297 tbl 08

NOTE:

1. The LBO, TMS, TDI, TCK and TRST pins will be internally pulled to VDD and the ZZ pin will be internally pulled to VSS if they are not actively driven in the application.

DC Electrical Characteristics Over the Operating

TemperatureandSupplyVoltageRange⁽¹⁾

200MHz

183MHz

166MHz

Symbol

Parameter

Test Conditions

Com'l Only Com'l

Ind

Com'l

Ind

Unit

Operating Power Supply

Current

Device Selected, Outputs Open, VDD = Max.,

360

30

340

30

350

320

330

mA

I

DD

(2)

VDDQ = Max., VIN > VIH or < VIL, f = fMAX

ISB1

CMOS Standby Power

Supply Current

Device Deselected, Outputs Open, VDD = Max.,

DDQ = Max., VIN > VHD or < VLD, f = 0^(2,3)

35

130

35

30

35

120

35

mA

V

ISB2

Clock Running Power

Supply Current

Device Deselected, Outputs Open, VDD = Max.,

130

30

120

30

110

30

(2,3)

V

DDQ = Max., VIN > VHD or < VLD, f = fMAX

ZZ > VHD,

VDD = Max.

Full Sleep Mode Supply

Current

mA

IZZ

5297 tbl 09

NOTES:

1. All values are maximum guaranteed values.

2. At f = fMAX, inputs are cycling at the maximum frequency of read cycles of 1/tCYC while ADSC = LOW; f=0 means no input lines are changing.

3. For I/Os VHD = VDDQ - 0.2V, VLD = 0.2V. For other inputs VHD = VDD - 0.2V, VLD = 0.2V.

AC Test Conditions

AC Test Load

V

DDQ/2

(VDDQ = 2.5V)

50Ω

Input Pulse Levels

0 to 2.5V

2ns

I/O

Z0 = 50Ω

Input Rise/Fall Times

,

5297 drw 06

Input Timing Reference Levels

Output Timing Reference Levels

AC Test Load

(VDDQ/2)

See Figure 1

Figure 1. AC Test Load

6

5

4

3

5297 tbl 10

ΔtCD

(Typical, ns)

2

1

20 30 50

80 100

Capacitance (pF)

200

5297 drw 07

,

Figure 2. Lumped Capacitive Load, Typical Derating

6.482

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

SynchronousTruthTable^(1,3)

Operation

Address

Used

CS

0

CLK

I/O

CE

CS

1

ADSP ADSC ADV

GW

BWE

BWx

OE

(2)

Deselected Cycle, Power Down

Read Cycle, Begin Burst

None

H

L

X

L

X

H

X

H

X

L

X

L

X

L

X

L

X

H

L

X

H

L

X

H

L

X

L

-

HI-Z

None

L

None

L

X

L

X

L

None

L

External

H

X

L

DOUT

Read Cycle, Begin Burst

L

H

L

HI-Z

Read Cycle, Begin Burst

L

H

X

H

X

H

X

H

X

DOUT

Read Cycle, Begin Burst

L

DOUT

Read Cycle, Begin Burst

L

H

X

L

HI-Z

Write Cycle, Begin Burst

L

D

IN

OUT

Write Cycle, Begin Burst

L

X

H

X

H

X

L

X

H

X

H

L

D

Read Cycle, Continue Burst

Write Cycle, Continue Burst

Read Cycle, Suspend Burst

Write Cycle, Suspend Burst

X

H

X

H

X

H

X

H

X

H

L

D

H

L

HI-Z

DOUT

H

L

HI-Z

DOUT

H

L

HI-Z

DOUT

H

X

L

HI-Z

D

IN

OUT

X

L

X

L

D

H

L

D

X

H

X

H

X

L

X

H

X

H

L

D

Current

H

L

D

H

L

HI-Z

DOUT

H

L

HI-Z

DOUT

H

L

HI-Z

DOUT

H

X

HI-Z

D

IN

5297 tbl 11

X

L

X

L

D

H

L

D

X

D

NOTES:

1. L = VIL, H = VIH, X = Don’t Care.

2. OE is an asynchronous input.

3. ZZ = low for this table.

6.42

9

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

SynchronousWriteFunctionTruthTable⁽¹⁾

Operation

GW

H

L

BWE

H

L

BW

X

H

X

L

1

BW

X

H

X

L

2

BW

X

H

X

L

3

BW

X

H

X

L

4

Read

Write all Bytes

Write Byte 1⁽³⁾

Write Byte 2⁽³⁾

Write Byte 3⁽³⁾

Write Byte 4⁽³⁾

X

L

H

L

H

L

H

L

H

L

H

L

H

L

H

5297 tbl 12

NOTES:

1. L = VIL, H = VIH, X = Don’t Care.

3. Multiple bytes may be selected during the same cycle.

AsynchronousTruthTable⁽¹⁾

Operation⁽²⁾

Read

ZZ

I/O Status

Power

OE

L

H

X

L

H

Data Out

High-Z

Active

Read

Write

High-Z – Data In

High-Z

Active

Deselected

Sleep Mode

Standby

Sleep

High-Z

5297 tbl 13

NOTES:

1. L = VIL, H = VIH, X = Don’t Care.

2. Synchronous function pins must be biased appropriately to satisfy operation requirements.

Interleaved Burst Sequence Table (LBO=VDD)

Sequence 1

Sequence 2

Sequence 3

Sequence 4

A1

A0

0

A1

A0

1

A1

A0

0

A1

A0

First Address

0

1

0

1

0

1

0

1

Second Address

Third Address

1

0

1

0

1

0

1

Fourth Address⁽¹⁾

1

0

1

0

5297 tbl 14

NOTE:

1. Upon completion of the Burst sequence the counter wraps around to its initial state.

LinearBurstSequenceTable(LBO=VSS)

Sequence 1

Sequence 2

Sequence 3

Sequence 4

A1

A0

0

A1

0

A0

1

A1

1

A0

0

A1

1

A0

First Address

0

1

Second Address

Third Address

1

0

1

0

1

0

1

Fourth Address⁽¹⁾

1

0

1

0

5297 tbl 15

NOTE:

1. Upon completion of the Burst sequence the counter wraps around to its initial state.

6.1402

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

AC Electrical Characteristics

(VDD = 3.3V ±5%, Commercial and Industrial Temperature Ranges)

200MHz⁽⁵⁾

183MHz

166MHz

Symbol

Parameter

Min.

Max.

Min.

Max.

Min.

Max.

Unit

____

t

CY C

Clock Cycle Time

5

2

5.5

2.2

6

ns

(1)

CH

Clock High Pulse Width

Clock Low Pulse Width

2.4

t

____

(1)

CL

t

Output Parameters

____

t

CD

Clock High to Valid Data

Clock High to Data Change

Clock High to Output Active

3.1

3.3

3.5

ns

____

tCDC

1.0

0

1.0

0

1.0

0

____

(2)

CLZ

t

(2)

Clock High to Data High-Z

1.5

3.1

1.5

3.3

1.5

3.5

ns

t

CHZ

____

tOE

Output Enable Access Time

3.1

3.3

3.5

____

(2)

Output Enable Low to Output Active

Output Enable High to Output High-Z

0

t

OLZ

____

3.1

3.3

3.5

t

OHZ

Set Up Times

____

t

SA

SS

SD

SW

SAV

SC

Address Setup Time

1.2

1.5

ns

t

Address Status Setup Time

Data In Setup Time

t

Write Setup Time

t

Address Advance Setup Time

Chip Enable/Select Setup Time

t

Hold Times

____

t

HA

HS

HD

HW

HAV

HC

Address Hold Time

0.4

0.5

ns

t

Address Status Hold Time

Data In Hold Time

t

Write Hold Time

t

Address Advance Hold Time

Chip Enable/Select Hold Time

t

Sleep Mode and Configuration Parameters

____

t

ZZPW

ZZ Pulse Width

100

20

100

22

100

24

ns

(3)

ZZR

ZZ Recovery Time

Configuration Set-up Time

t

____

(4)

CFG

ns

t

4876 tbl 16

NOTES:

1. Measured as HIGH above VIH and LOW below VIL.

2. Transition is measured ±200mV from steady-state.

3. Device must be deselected when powered-up from sleep mode.

4. tCFG is the minimum time required to configure the device based on the LBO input. LBO is a static input and must not change during normal operation.

5. Commercial temperature range only.

6.42

11

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

Timing Waveform of Pipeline Read Cycle^(1,2)

,

6.1422

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

Timing Waveform of Combined Pipelined Read and Write Cycles^(1,2,3)

,

6.42

13

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

Timing Waveform of Write Cycle No. 1 — GW Controlled^(1,2,3)

,

.

6.1442

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

Timing Waveform of Write Cycle No. 2 — Byte Controlled^(1,2,3)

,

6.42

15

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

Timing Waveform of Sleep (ZZ) and Power-Down Modes^(1,2,3)

,

6.1462

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

Non-Burst Read Cycle Timing Waveform

CLK

ADSP

ADSC

Av

Aw

Ax

Ay

Az

ADDRESS

GW, BWE, BWx

CE, CS

1

CS0

OE

(Av)

(Aw)

(Ax)

(Ay)

DATA^OUT

,

5297 drw 14

NOTES:

1. ZZ input is LOW, ADV is HIGH and LBOis Don't Care for this cycle.

2. (Ax) represents the data for address Ax, etc.

3. Forreadcycles, ADSP andADSCfunctionidenticallyandare therefore interchangable.

Non-Burst Write Cycle Timing Waveform

CLK

ADSP

ADSC

Av

Aw

Ax

Ay

Az

ADDRESS

GW

CE, CS

1

CS0

(Av)

(Aw)

(Ax)

(Ay)

(Az)

DATA^IN

,

5297 drw 15

NOTES:

1. ZZ input is LOW, ADV and OE are HIGH, and LBO is Don't Care for this cycle.

2. (Ax) represents the data for address Ax, etc.

3. Although only GW writes are shown, the functionality of BWE and BWx together is the same as GW.

4. For write cycles, ADSP and ADSC have different limitations.

6.42

17

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

JTAG Interface Specification (SA Version only)

t

JCYC

t

JR

tJF

t

JCL

tJCH

TCK

Device Inputs⁽¹⁾/

TDI/TMS

tJDC

tJS

t

JH

Device Outputs⁽²⁾/

TDO

t

JRSR

tJCD

3)

(

x

TRST

M5297 drw 01

t

JRST

NOTES:

1. Device inputs = All device inputs except TDI, TMS and TRST.

2. Device outputs = All device outputs except TDO.

3. During power up, TRST could be driven low or not be used since the JTAG circuit resets automatically. TRST is an optional JTAG reset.

JTAG AC Electrical

Characteristics^(1,2,3,4)

Symbol

Parameter

JTAG Clock Input Period

JTAG Clock HIGH

JTAG Clock Low

JTAG Clock Rise Time

JTAG Clock Fall Time

JTAG Reset

Min.

100

40

Max.

Units

ns

ScanRegisterSizes

____

t

JCYC

JCH

JCL

JR

JF

JRST

JRSR

JCD

JDC

JS

JH

Register Name

Bit Size

____

t

ns

Instruction (IR)

4

1

t

40

ns

Bypass (BYR)

t

5⁽¹⁾

ns

____

JTAG Identification (JIDR)

Boundary Scan (BSR)

32

t

5⁽¹⁾

ns

____

Note (1)

____

t

50

ns

I5297 tbl 03

____

t

JTAG Reset Recovery

JTAG Data Output

JTAG Data Output Hold

JTAG Setup

50

ns

NOTE:

1. The Boundary Scan Descriptive Language (BSDL) file for this device is available

by contacting your local IDT sales representative.

____

t

20

ns

____

t

0

ns

____

t

25

ns

t

JTAG Hold

ns

I5297 tbl 01

NOTES:

1. Guaranteed by design.

2. AC Test Load (Fig. 1) on external output signals.

3. Refer to AC Test Conditions stated earlier in this document.

4. JTAG operations occur at one speed (10MHz). The base device may run at any speed specified in this datasheet.

6.1482

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

JTAG Identification Register Definitions (SA Version only)

Instruction Field

Revision Number (31:28)

Value

Description

0x2

0x23D, 0x23F

0x33

Reserved for version number.

IDT Device ID (27:12)

Defines IDT part number 71V25761SA and 71V25781SA, respectively.

Allows unique identification of device vendor as IDT.

Indicates the presence of an ID register.

IDT JEDEC ID (11:1)

ID Register Indicator Bit (Bit 0)

1

I5297 tbl 02

AvailableJTAGInstructions

Instruction

Description

OPCODE

Forces contents of the boundary scan cells onto the device outputs⁽¹⁾.

Places the boundary scan register (BSR) between TDI and TDO.

EXTEST

0000

Places the boundary scan register (BSR) between TDI and TDO.

SAMPLE allows data from device inputs⁽²⁾and outputs⁽¹⁾to be captured

in the boundary scan cells and shifted serially through TDO. PRELOAD

allows data to be input serially into the boundary scan cells via the TDI.

SAMPLE/PRELOAD

0001

Loads the JTAG ID register (JIDR) with the vendor ID code and places

the register between TDI and TDO.

DEVICE_ID

HIGHZ

0010

0011

Places the bypass register (BYR) between TDI and TDO. Forces all

device output drivers to a High-Z state.

RESERVED

0100

0101

0110

0111

Several combinations are reserved. Do not use codes other than those

identified for EXTEST, SAMPLE/PRELOAD, DEVICE_ID, HIGHZ, CLAMP,

VALIDATE and BYPASS instructions.

Uses BYR. Forces contents of the boundary scan cells onto the device

outputs. Places the bypass register (BYR) between TDI and TDO.

CLAMP

1000

RESERVED

1001

1010

1011

1100

Same as above.

Automatically loaded into the instruction register whenever the TAP

controller passes through the CAPTURE-IR state. The lower two bits '01'

are mandated by the IEEE std. 1149.1 specification.

VALIDATE

1101

RESERVED

BYPASS

Same as above.

1110

1111

The BYPASS instruction is used to truncate the boundary scan register

as a single bit in length.

I5297 tbl 04

NOTES:

1. Device outputs = All device outputs except TDO.

2. Device inputs = All device inputs except TDI, TMS, and TRST.

6.42

19

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

OrderingInformation

PackageInformation

100-Pin Thin Quad Plastic Flatpack (TQFP)

119 Ball Grid Array (BGA)

165 Fine Pitch Ball Grid Array (fBGA)

Information available on the IDT website

6.2402

IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with

2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

Datasheet Document History

12/31/99

Creatednewdatasheetfrom71V2576and71V2578datasheets

Pg. 1, 4, 8, 19

Pg. 18

AddedIndustrialTemperaturerangeofferings

Added100pinTQFPPackageDiagramOutline

04/04/00

Pg. 4

AddcapacitancetableforBGApackage;AddIndustrialtemperaturetotable;InsertnotetoAbsolute

MaxRatingsandRecommendedOperatingTempraturetables

Addnewpackage offering, 13x15mm165fBGA

06/01/00

07/15/00

Pg. 20

Pg. 7

CorrectBG119PackageDiagramOutline

AddnotereferencetoBG119pinout

Pg. 8

AddDNUnote toBQ165pinout

Pg. 20

UpdateBG119PackageDiagramOutlineDimensions

RemovePreliminaryfromdatasheet

10/25/00

Pg. 8

Pg.4

Add reference note to pin N5 in BQ165 pinout, reserved for JTAG, TRST

Updated165BGAtableinformationfromTBDto7

04/22/03

06/30/03

Pg. 1,2,3,5-9

Pg. 5-8

UpdateddatasheetwithJTAGinformation

Removed note for NC pins (38,39(PF package); L4, U4 (BG package) H2, N7 (BQ package))

requiringNCorconnectiontoVss.

Pg. 19,20

Pg. 21-23

Pg. 24

AddedtwopagesofJTAGSpecification,ACElectrical,DefinitionsandInstructions

Removedoldpackageinformationfromthedatasheet

UpdatedorderinginformationwithJTAGandYsteppinginformation. Addedinformation

regardingpackages availableIDTwebsite.

03/13/09

05/27/10

Pg.21

Pg.1-21

Removed "IDT" from orderable part number

Added"Restrictedhazardoussubstancedevice"totheorderinginformation

RemovedIDT71V25781S/SAfromdatasheet.

CORPORATE HEADQUARTERS

6024 Silver Creek Valley Road

San Jose, CA 95138

for SALES:

for Tech Support:

ipchelp@idt.com

800-345-7015

800-345-7015 or

408-284-8200

fax: 408-284-2775

www.idt.com

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

6.42

21


型号：	71V25761YSA166BQI
厂家：	INTEGRATED DEVICE TECHNOLOGY
描述：	Cache SRAM, 128KX36, 3.5ns, CMOS, PBGA165, FBGA-165 静态存储器
文件：	总21页 (文件大小：327K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

71V25761YSA166BQI [IDT]

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