ICS9120M-56LF [IDT]
Clock Generator, 80MHz, PDSO8, 0.150 INCH, SOIC-8;型号: | ICS9120M-56LF |
厂家: | INTEGRATED DEVICE TECHNOLOGY |
描述: | Clock Generator, 80MHz, PDSO8, 0.150 INCH, SOIC-8 时钟 光电二极管 外围集成电路 晶体 |
文件: | 总5页 (文件大小:80K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ICS9120-56
Integrated
Circuit
Systems, Inc.
Frequency Timing Generator for EtherNet & Hard Drives
General Description
Features
•
•
•
•
•
•
Single 25.00 MHz crystal or system clock reference
The ICS9120-56 is a high performance frequency generator
designed to support hard disk drive and EtherNet systems. It
offers all clock frequencies required for the servo and decoder
sections of these devices. These frequencies are synthesized
from a single 25.00 MHz on-chip oscillator.
100ps one sigma jitter maintains 16-bit performance
Output rise/fall times less than 2.0ns
On-chip loop filter components
3.3V-5V supply range
8-pin, 150-mil SOIC
High accuracy, low jitter PLLs meet the 100 ppm frequency
tolerance required by these systems. Fast output clock
edge rates minimize board induced jitter.
Applications
•
Specifically designed to support the high performance
requirements of high speed EtherNet systems using
10Base-T/100Base-TXIntegrataedPHYceiver.
Pin Configuration
•
Designed to support the requirements for high
performance hard drives.
8-Pin SOIC
Block Diagram
ICS9120-56RevA040697P
ICS9120-56
Pin Descriptions for ICS9120-56
PIN
PIN
TYPE
Input
DESCRIPTION
NUMBER NAME
Crystal or external clock source. Has feedback bias for crystal, and internal
crystal load capacitors to GND.
1
X1
2
3
4
5
6
7
8
VDD
GND
CLK1
CLK2
CLK3
REF
Power +Power supply input.
Power Ground return for Pin 2.
Output 40.00 MHz clock output.
Output 22.5 MHz output clock.
Output 20.00 MHz output clock.
Output Reference clock
X2
Output Crystal output drive, includes internal crystal load capacitor to GND.
2
ICS9120-56
Absolute Maximum Ratings
Supply Voltage .......................................................................................................... 7.0 V
Logic Inputs ....................................................................... GND –0.5 V to VDD +0.5 V
Ambient Operating Temperature ............................................................. 0°C to +70°C
Storage Temperature ........................................................................... –65°C to +150°C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings
are stress specifications only and functional operation of the device at these or any other conditions above those listed
in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect product reliability.
Electrical Characteristics at 3.3V
VDD = +3.0 to +3.7 V, TA = 0OC-70oC unless otherwise stated
DC Characteristics
PARAMETER
Input Low Voltage1, X12
Input High Voltage1, X12
Output Low Voltage
Output High Voltage
Output Low Current
Output High Current
Supply Current
SYMBOL
VIL
TEST CONDITIONS
MIN
2.0
TYP
MAX
0.8
UNITS
V
VIH
V
VOL
VOH
IOL
IOL=6.0mA
0.05VDD
0.94VDD
24
0.1VDD
V
IOH=4.0mA
0.85VDD
15.0
V
VOL=0.2VDD
mA
mA
mA
IOH
VOH=0.7VDD
-13
-8.0
IDD
Unloaded VDD 5.5V
AC Characteristics
15pF load 0.8 to 2.0V
15pF load 2.0 to 0.8V
15pF load @ 1.5V VDD
Except REFCLK
15pF load @ 1.5V VDD
Except REFCLK
For all frequencies except
REFCLK
For all frequencies except
REFCLK
16
30.0
Rise Time1
Fall Time1
Tr
Tf
2.3
1.5
ns
ns
0.8
50
Duty Cycle1
Dt
Dt
45
55
55
65
%
%
ps
ps
Duty Cycle1
6
Jitter, One Sigma1
Jitter Absolute1
Tjis
Tjab
120
310
200
500
-500
Jitter, One Sigma1
Jitter Absolute1
Input Frequency1
Tjis
Tjab
FI
REFCLK only
REFCLK only
0.9
1.9
3
4
%
%
1
30
48
MHz
MHz
Output Frequency Range1
Output Mean Frequency1
Accuracy vs. Target
Fo
1.6
Foa
Tpu
Cinx
With 25.00MHz input
-100
0
7
100
10
ppm
ms
Power-up Time1,3
0 to 40.0 MHz/1ms Ramp.
X1 (Pin 1),
X2 (Pin 8)
Crystal Input Capacitance1
16
pF
1: Parameter is guaranteed by design and characterization. Not 100% tested in production.
2: For direct drive of X1 input.
3. 1ms Ramp @ 1.4V to 1st crossing.
3
ICS9120-56
Electrical Characteristics at 5.0V
VDD = +4.5 to 5.5 V, TA = 0OC-70oC unless otherwise stated
DC Characteristics
TEST CONDITIONS
PARAMETER
SYMBOL
MIN
2.0
TYP
MAX
0.8
UNITS
Input Low Voltage1, X12
Input High Voltage1, X12
Output Low Voltage
Output High Voltage
Output Low Current
Output High Current
Supply Current
VIL
VIH
VOL
VOH
IOL
V
V
IOL=10mA
0.15
3.7
45
0.4
V
IOH=-30mA
VOL=0.8
2.4
25
V
mA
mA
mA
IOH
IDD
VOH=2.4
-53
25
-35
50
Unloaded VDD 5.5V
AC Characteristics
Rise Time1
Fall Time1
Rise Time1
Fall Time1
Tr
Tf
Tr
Tf
15pF load 0.8 to 2.0V
15pF load 2.0 to 0.8V
15pF load 20% to 80%
15pF load 80% to 20%
0.7
0.5
2.0
1.4
1.5
1.5
4.0
4.0
ns
ns
15pF load @ 1.4V
REFCLK
15pF load @ 1.4V
REFCLK
For all frequencies except
REFCLK
For all frequencies except
REFCLK
Duty Cycle1
Dt
Dt
45
55
51
62
55
65
%
%
ps
ps
Duty Cycle1
Jitter, One Sigma1
Jitter Absolute1
Tjis
Tjab
50
100
400
-400
200
Jitter, One Sigma1
Jitter Absolute1
Input Frequency1
Output Frequency Range1
Output Mean Frequency1
Accuracy vs. Target
Tjis
Tjab
FI
REFCLK only
REFCLK only
1.2
2.2
4
5
%
%
1
50
80
MHz
MHz
Fo
1.6
Foa
Tpu
Cinx
With 25.00MHz input
-100
0
6
100
10
ppm
ms
0 to 40.0 MHz;
1ms Ramp.
X1 (Pin 1),
X2 (Pin 8)
Power-up Time1,3
Crystal Input Capacitance1
16
pF
1: Parameter is guaranteed by design and characterization. Not 100% tested in production.
2: For direct drive of X1 input.
3. 1ms Ramp @ 1.4V to 1st crossing.
4
ICS9120-56
0.154
0.194
0.031
0.024
0.063
0.008
0.015
0.025
0.016
0.238
0.050
0.006
± 0.004
8-Pin SOIC Package
Ordering Information
ICS9120M-56
Example:
ICS XXXX M-PPP
Pattern Number (2 or 3-digit number for parts with ROM code pattern)
Package Type
M =SOIC
Device Type (consists of 3 or 4-digit numbers)
Prefix
ICS, AV=Standard Device
5
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