IDT54FCT825BTQ [IDT]

HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS; 高性能CMOS总线接口寄存器
IDT54FCT825BTQ
型号: IDT54FCT825BTQ
厂家: INTEGRATED DEVICE TECHNOLOGY    INTEGRATED DEVICE TECHNOLOGY
描述:

HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
高性能CMOS总线接口寄存器

文件: 总9页 (文件大小:182K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IDT54/74FCT821AT/BT/CT  
HIGH-PERFORMANCE  
CMOS BUS  
INTERFACE REGISTERS  
IDT54/74FCT823AT/BT/CT/DT  
IDT54/74FCT825AT/BT/CT  
Integrated Device Technology, Inc.  
FEATURES:  
• Common features:  
– Low input and output leakage 1µA (max.)  
– CMOS power levels  
– True TTL input and output compatibility  
– VOH = 3.3V (typ.)  
DESCRIPTION:  
The FCT82xT series is built using an advanced dual metal  
CMOS technology. The FCT82xT series bus interface regis-  
ters are designed to eliminate the extra packages required to  
buffer existing registers and provide extra data width for wider  
address/data paths or buses carrying parity. The FCT821T  
are buffered, 10-bit wide versions of the popular FCT374T  
function. The FCT823T are 9-bit wide buffered registers with  
Clock Enable (EN) and Clear (CLR) – ideal for parity bus  
interfacing in high-performance microprogrammed systems.  
TheFCT825Tare8-bitbufferedregisterswithalltheFCT823T  
controls plus multiple enables (OE1, OE2, OE3) to allow multi-  
user control of the interface, e.g., CS, DMA and RD/WR. They  
are ideal for use as an output port requiring high IOL/IOH.  
The FCT82xT high-performance interface family can drive  
large capacitive loads, while providing low-capacitance bus  
loading at both inputs and outputs. All inputs have clamp  
diodes and all outputs are designed for low-capacitance bus  
loading in high-impedance state.  
– VOL = 0.3V (typ.)  
– Meets or exceeds JEDEC standard 18 specifications  
– Product available in Radiation Tolerant and Radiation  
Enhanced versions  
– Military product compliant to MIL-STD-883, Class B  
and DESC listed (dual marked)  
– Available in DIP, SOIC, SSOP, QSOP, CERPACK  
and LCC packages  
• Features for FCT821T/FCT823T/FCT825T:  
– A, B, C and D speed grades  
– High drive outputs (-15mA IOH, 48mA IOL)  
– Power off disable outputs permit “live insertion”  
FUNCTIONAL BLOCK DIAGRAM  
D0  
DN  
EN  
CLR  
CL  
CL  
D
Q
Q
D
Q
Q
CP  
CP  
CP  
OE  
Y
0
YN  
2567 drw 01  
The IDT logo is a registered trademark of Integrated Device Technology, Inc.  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
AUGUST 1995  
1995 Integrated Device Technology, Inc  
6.21  
DSC-4202/5  
1
IDT54/74FCT821AT/BT/CT, 823/825AT/BT/CT/DT  
HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
PIN CONFIGURATIONS  
FCT821 10-BIT REGISTER  
INDEX  
1
2
3
4
5
6
7
8
9
10  
24  
23  
22  
21  
20  
19  
18  
17  
16  
VCC  
Y0  
Y1  
Y2  
Y3  
OE  
D0  
D1  
D2  
D3  
D4  
D5  
D6  
D7  
D8  
4 3 2  
282726  
1
D2  
D3  
D4  
NC  
D5  
D6  
D7  
5
6
7
8
25  
Y2  
Y3  
Y4  
NC  
Y5  
Y6  
Y7  
P24-1  
D24-1  
SO24-2  
SO24-7  
SO24-8  
&
24  
23  
22  
21  
20  
19  
L28-1  
Y4  
Y5  
Y6  
Y7  
Y8  
9
10  
11  
1213 1415161718  
E24-1  
15  
14  
13  
D9  
GND  
Y9  
CP  
11  
12  
2567 drw 02  
LCC  
TOP VIEW  
DIP/SOIC/SSOP/QSOP/CERPACK  
TOP VIEW  
FCT823 9-BIT REGISTER  
INDEX  
1
2
3
4
5
6
7
8
24  
23  
22  
21  
20  
19  
18  
17  
16  
V
Y
Y
Y
Y
CC  
0
OE  
D0  
D1  
D2  
D3  
D4  
D5  
D6  
4 3 2  
282726  
1
D
2
1
5
6
7
8
9
25  
Y
Y
Y
2
3
4
P24-1  
D24-1  
SO24-2  
SO24-7  
SO24-8  
&
2
D3  
D4  
NC  
D5  
24  
23  
22  
21  
20  
19  
3
NC  
Y
Y
Y
Y
Y
4
5
6
7
8
L28-1  
Y
Y
Y
5
D6  
10  
11  
6
7
D7  
D7  
D
8
9
10  
E24-1  
1213 1415161718  
15  
14  
13  
CLR  
GND  
EN  
CP  
11  
12  
2567 drw 03  
LCC  
TOP VIEW  
DIP/SOIC/SSOP/QSOP/CERPACK  
TOP VIEW  
FCT825 8-BIT REGISTER  
INDEX  
1
2
3
24  
23  
22  
VCC  
OE1  
OE2  
D0  
OE3  
Y0  
4 3 2  
282726  
1
D1  
D2  
D3  
NC  
D4  
D5  
D6  
5
6
7
8
25  
Y1  
Y2  
Y3  
NC  
Y4  
Y5  
Y6  
D1  
D2  
4
5
P24-1 21  
D24-1 20  
Y1  
Y2  
24  
23  
22  
21  
20  
19  
SO24-2  
SO24-8  
&
D3  
D4  
D5  
D6  
19  
18  
17  
16  
Y3  
6
7
8
9
L28-1  
Y4  
Y5  
9
10  
11  
E24-1  
Y6  
1213 1415161718  
D7  
10  
15  
14  
13  
Y7  
EN  
CP  
CLR  
GND  
11  
12  
2567 drw 04  
LCC  
TOP VIEW  
DIP/SOIC/QSOP/CERPACK  
TOP VIEW  
6.21  
2
IDT54/74FCT821AT/BT/CT, 823/825AT/BT/CT/DT  
HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
PIN DESCRIPTION  
FUNCTION TABLE(1)  
Internal/  
Outputs  
Names  
I/O  
Description  
Inputs  
DI  
I
The D flip-flop data inputs.  
DI  
CP  
QI  
YI  
OE  
CLR  
EN  
Function  
CLR  
I
When the clear input is LOW and OE is  
LOW, the QI outputs are LOW. When  
the clear input is HIGH, data can be  
entered into the register.  
H
H
H
H
L
L
L
H
L
H
Z
Z
High Z  
H
L
L
L
X
X
H
H
L
L
L
L
X
X
X
X
L
H
L
H
X
X
X
X
L
L
Z
L
Clear  
Hold  
Load  
CP  
I
Clock Pulse for the Register; enters  
data into the register on the LOW-to-  
HIGH transition.  
H
L
H
H
H
H
H
H
NC  
NC  
L
Z
NC  
Z
H
H
L
YI  
O
I
The register 3-state outputs.  
H
Z
EN  
Clock Enable. When the clock enable is  
LOW, data on the D I input is transferred  
to the QI output on the LOW-to-HIGH  
clock transition. When the clock enable  
is HIGH, the QI outputs do not change  
state, regardless of the data or clock  
input transitions.  
L
L
L
H
H
NOTE:  
1. H = HIGH  
L = LOW  
2567 tbl 02  
X = Don’t Care  
NC = No Change  
= LOW-to-HIGH Transition  
Z = High Impedance  
OE  
I
Output Control. When the OE input is  
HIGH, the Y I outputs are in the high-  
impedance state. When the OE input is  
LOW, the TRUE register data is present  
at the YI outputs.  
2567 tbl 01  
ABSOLUTE MAXIMUM RATINGS(1)  
CAPACITANCE (TA = +25°C, f = 1.0MHz)  
Symbol  
Parameter(1)  
Conditions Typ. Max. Unit  
Symbol  
Rating  
Commercial  
Military  
Unit  
(2)  
CIN  
Input  
Capacitance  
Output  
VIN = 0V  
6
8
10  
pF  
VTERM  
Terminal Voltage  
with Respect to  
GND  
–0.5 to +7.0 –0.5 to +7.0  
V
COUT  
VOUT = 0V  
12  
pF  
(3)  
VTERM  
Terminal Voltage  
with Respect to  
GND  
–0.5 to  
–0.5 to  
V
Capacitance  
VCC +0.5  
VCC +0.5  
2567 lnk 04  
NOTE:  
1. This parameter is measured at characterization but not tested.  
TA  
Operating  
0 to +70  
–55 to +125 °C  
Temperature  
Temperature  
Under Bias  
Storage  
TBIAS  
TSTG  
–55 to +125 –65 to +135 °C  
–55 to +125 –65 to +150 °C  
Temperature  
Power Dissipation  
PT  
0.5  
0.5  
W
IOUT  
DC Output  
Current  
–60 to +120 –60 to +120 mA  
2567 lnk 03  
NOTES:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-  
INGS may cause permanent damage to the device. This is a stress rating  
onlyandfunctionaloperationofthedeviceattheseoranyotherconditions  
above those indicated in the operational sections of this specification is  
not implied. Exposure to absolute maximum rating conditions for  
extended periods may affect reliability. No terminal voltage may exceed  
VCC by +0.5V unless otherwise noted.  
2. Input and VCC terminals only.  
3. Outputs and I/O terminals only.  
6.21  
3
IDT54/74FCT821AT/BT/CT, 823/825AT/BT/CT/DT  
HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE  
Following Conditions Apply Unless Otherwise Specified:  
Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%  
Symbol  
Parameter  
Input HIGH Level  
Test Conditions(1)  
Min. Typ.(2) Max.  
Unit  
VIH  
Guaranteed Logic HIGH Level  
2.0  
V
VIL  
Input LOW Level  
Guaranteed Logic LOW Level  
0.8  
V
I
I
I
I
I
I H  
I L  
Input HIGH Current(4)  
Input LOW Current(4)  
High Impedance Output Current  
(3-State Output pins)(4)  
Input HIGH Current(4)  
Clamp Diode Voltage  
Input Hysteresis  
V
CC = Max.  
CC = Max.  
CC = Max., V  
V
V
V
V
I
I
= 2.7V  
= 0.5V  
±1  
±1  
±1  
±1  
±1  
µA  
µA  
µA  
OZH  
OZL  
I
V
O
O
= 2.7V  
= 0.5V  
V
V
I
= VCC (Max.)  
V
IK  
H
CC = Min., IIN = –18mA  
–0.7  
200  
0.01  
–1.2  
V
V
mV  
I
CC  
Quiescent Power Supply Current  
V
CC = Max., VIN = GND or VCC  
1
mA  
2567 lnk 05  
OUTPUT DRIVE CHARACTERISTICS FOR FCT821/823/825T  
Symbol  
Parameter  
Test Conditions(1)  
Min. Typ.(2) Max.  
Unit  
VOH  
Output HIGH Voltage  
VCC = Min.  
VIN = VIH or VIL  
IOH = –6mA MIL.  
2.4  
2.0  
3.3  
3.0  
0.3  
V
IOH = –8mA COM'L.  
IOH = –12mA MIL.  
IOH = –15mA COM'L.  
IOL = 32mA MIL.  
V
V
VOL  
Output LOW Voltage  
Short Circuit Current  
VCC = Min.  
VIN = VIH or VIL  
VCC = Max., VO = GND(3)  
0.5  
IOL = 48mA COM'L.  
IOS  
–60  
–120 –225  
±1  
mA  
IOFF  
Input/Output Power Off Leakage(5) VCC = 0V, VIN or VO 4.5V  
µA  
2567 lnk 06  
NOTES:  
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.  
2. Typical values are at Vcc = 5.0V, +25°C ambient.  
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.  
4. The test limit for this parameter is ±5µA at TA = –55°C.  
5. This parameter is guaranteed but not tested.  
6.21  
4
IDT54/74FCT821AT/BT/CT, 823/825AT/BT/CT/DT  
HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
POWER SUPPLY CHARACTERISTICS  
Symbol  
Parameter  
Quiescent Power Supply Current  
TTL Inputs HIGH  
Test Conditions(1)  
Min. Typ.(2) Max.  
Unit  
VCC = Max.  
VIN = 3.4V(3)  
ICC  
0.5  
2.0  
mA  
ICCD  
Dynamic Power Supply Current(4) VCC = Max.  
VIN = VCC  
0.15  
0.25  
mA/  
Outputs Open  
VIN = GND  
MHz  
OE = EN = GND  
One Input Toggling  
50% Duty Cycle  
VCC = Max.  
Outputs Open  
fCP= 10MHz  
50% Duty Cycle  
OE = EN = GND  
One Bit Toggling  
at fi = 5MHz  
50% Duty Cycle  
VCC = Max.  
IC  
Total Power Supply Current(6)  
VIN = VCC  
VIN = GND  
1.5  
2.0  
3.8  
6.0  
3.5  
5.5  
mA  
VIN = 3.4V  
VIN = GND  
VIN = VCC  
VIN = GND  
7.3(5)  
Outputs Open  
fCP= 10MHz  
50% Duty Cycle  
OE = EN = GND  
Eight Bits Toggling  
at fi = 2.5MHz  
50% Duty Cycle  
VIN = 3.4V  
VIN = GND  
16.3(5)  
2567 tbl 07  
NOTES:  
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.  
2. Typical values are at VCC = 5.0V, +25°C ambient.  
3. Per TTL driven input (VIN = 3.4V). All other inputs at VCC or GND.  
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.  
5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested.  
6. IC = IQUIESCENT + IINPUTS + IDYNAMIC  
IC = ICC + ICC DHNT + ICCD (fCP/2 + fiNi)  
ICC = Quiescent Current  
ICC = Power Supply Current for a TTL High Input (VIN = 3.4V)  
DH = Duty Cycle for TTL Inputs High  
NT = Number of TTL Inputs at DH  
ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL)  
fCP = Clock Frequency for Register Devices (Zero for Non-Register Devices)  
fi = Input Frequency  
Ni = Number of Inputs at fi  
All currents are in milliamps and all frequencies are in megahertz.  
6.21  
5
IDT54/74FCT821AT/BT/CT, 823/825AT/BT/CT/DT  
HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
SWITCHING CHARACTERISTICS OVER OPERATING RANGE  
FCT821/823/825AT  
FCT821/823/825BT  
Com'l. Mil.  
Max. Unit  
Com'l.  
Mil.  
Symbol  
Parameter  
Propagation Delay  
CP to Y OE = LOW)  
Condition(1)  
= 50pF  
= 500  
= 300pF(4)  
= 500  
= 50pF  
= 500  
Min (2)  
.
Max. Min (2)  
.
Max. Min (2)  
.
Max. Min (2)  
.
t
t
PLH  
PHL  
C
L
1.5  
10.0  
20.0  
1.5  
11.5  
20.0  
1.5  
7.5  
15.0  
1.5  
8.5  
16.0  
ns  
I
(
R
L
C
L
1.5  
4.0  
2.0  
4.0  
2.0  
1.5  
6.0  
7.0  
1.5  
4.0  
2.0  
4.0  
2.0  
1.5  
7.0  
7.0  
1.5  
3.0  
1.5  
3.0  
0
1.5  
3.0  
1.5  
3.0  
0
R
L
t
t
t
t
t
t
t
t
SU  
H
Set-up Time HIGH or LOW  
to CP  
Hold Time HIGH or LOW  
to CP  
C
L
ns  
ns  
ns  
ns  
ns  
ns  
ns  
D
I
R
L
D
I
SU  
H
Set-up Time HIGH or LOW  
EN to CP  
Hold Time HIGH or LOW  
EN to CP  
PHL  
REM  
W
Propagation Delay, CLR to Y  
I
14.0  
15.0  
1.5  
6.0  
6.0  
9.0  
1.5  
6.0  
6.0  
9.5  
Recovery Time CLR to CP  
Clock Pulse Width  
HIGH or LOW  
W
CLR Pulse Width LOW  
6.0  
1.5  
7.0  
1.5  
6.0  
1.5  
6.0  
1.5  
ns  
ns  
t
t
PZH  
PZL  
Output Enable Time OE to Y  
I
C
L
= 50pF  
= 500  
= 300pF(4)  
12.0  
13.0  
8.0  
9.0  
R
L
C
L
1.5  
1.5  
1.5  
23.0  
7.0  
1.5  
1.5  
1.5  
25.0  
8.0  
1.5  
1.5  
1.5  
15.0  
6.5  
1.5  
1.5  
1.5  
16.0  
7.0  
R
L
= 500  
= 5pF(4)  
= 500  
= 50pF  
= 500  
t
t
PHZ  
PLZ  
Output Disable Time OE to Y  
I
CL  
ns  
R
L
C
L
8.0  
9.0  
7.5  
8.0  
R
L
NOTES:  
1. See test circuit and waveforms.  
2567 tbl 08  
2. Minimum limits are guaranteed but not tested on Propagation Delays.  
3. This parameter is guaranteed but not tested.  
4. This condition is guaranteed but not tested.  
6.21  
6
IDT54/74FCT821AT/BT/CT, 823/825AT/BT/CT/DT  
HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
SWITCHING CHARACTERISTICS OVER OPERATING RANGE  
FCT821/823/825CT  
FCT823DT  
Com'l.  
Min (2)  
Com'l.  
Mil.  
Max.  
Symbol  
Parameter  
Propagation Delay  
CP to Y OE = LOW)  
Condition(1)  
= 50pF  
= 500  
= 300pF(4)  
= 500  
= 50pF  
= 500  
Min (2)  
.
Max. Min (2)  
.
.
Max.  
Unit  
t
t
PLH  
PHL  
C
L
1.5  
6.0  
12.5  
1.5  
7.0  
13.5  
1.5  
1.5  
2.0  
1.0  
3.0  
0
5.0  
ns  
I
(
R
L
C
L
1.5  
3.0  
1.5  
3.0  
0
1.5  
3.0  
1.5  
3.0  
0
8.5  
5.0  
R
L
t
t
t
t
t
t
t
t
SU  
H
Set-up Time HIGH or LOW  
to CP  
Hold Time HIGH or LOW  
to CP  
C
L
ns  
ns  
ns  
ns  
ns  
ns  
ns  
D
I
R
L
D
I
SU  
H
Set-up Time HIGH or LOW  
EN to CP  
Hold Time HIGH or LOW  
EN to CP  
PHL  
REM  
W
Propagation Delay, CLR to Y  
Recovery Time CLR to CP  
Clock Pulse Width  
I
1.5  
6.0  
6.0  
8.0  
1.5  
6.0  
6.0  
8.5  
1.5  
3.0  
3.0  
(3)  
HIGH or LOW  
(3)  
W
CLR Pulse Width LOW  
6.0  
1.5  
6.0  
1.5  
3.0  
1.5  
ns  
ns  
t
t
PZH  
PZL  
Output Enable Time OE to Y  
I
C
L
= 50pF  
= 500  
= 300pF(4)  
7.0  
8.0  
4.8  
R
L
C
L
1.5  
1.5  
1.5  
12.5  
6.0  
1.5  
1.5  
1.5  
13.5  
6.0  
1.5  
1.5  
1.5  
9.0  
4.0  
4.0  
R
L
= 500  
= 5pF(4)  
= 500  
= 50pF  
= 500  
t
t
PHZ  
PLZ  
Output Disable Time OE to Y  
I
CL  
ns  
R
L
C
R
L
6.5  
6.5  
L
NOTES:  
1. See test circuit and waveforms.  
2567 tbl 09  
2. Minimum limits are guaranteed but not tested on Propagation Delays.  
3. This parameter is guaranteed but not tested.  
4. This condition is guaranteed but not tested.  
6.21  
7
IDT54/74FCT821AT/BT/CT, 823/825AT/BT/CT/DT  
HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
TEST CIRCUITS AND WAVEFORMS  
TEST CIRCUITS FOR ALL OUTPUTS  
SWITCH POSITION  
Test  
Switch  
VCC  
7.0V  
Open Drain  
Disable Low  
Closed  
500  
Enable Low  
VOUT  
VIN  
Open  
All Other Tests  
DEFINITIONS:  
CL= Load capacitance: includes jig and probe capacitance.  
RT = Termination resistance: should be equal to ZOUT of the Pulse  
Generator.  
Pulse  
Generator  
D.U.T.  
2567 lnk 10  
50pF  
500  
T
R
C
L
2567 drw 05  
SET-UP, HOLD AND RELEASE TIMES  
PULSE WIDTH  
3V  
DATA  
1.5V  
0V  
INPUT  
LOW-HIGH-LOW  
tH  
tSU  
1.5V  
PULSE  
3V  
1.5V  
0V  
TIMING  
INPUT  
ASYNCHRONOUS CONTROL  
t
W
t
REM  
PRESET  
CLEAR  
ETC.  
3V  
1.5V  
0V  
HIGH-LOW-HIGH  
PULSE  
1.5V  
SYNCHRONOUS CONTROL  
PRESET  
2567 drw 07  
3V  
1.5V  
0V  
CLEAR  
tSU  
tH  
CLOCK ENABLE  
ETC.  
2567 drw 06  
PROPAGATION DELAY  
ENABLE AND DISABLE TIMES  
ENABLE  
DISABLE  
3V  
1.5V  
0V  
3V  
SAME PHASE  
CONTROL  
INPUT  
1.5V  
0V  
INPUT TRANSITION  
t
PLH  
t
t
PHL  
PHL  
t
PZL  
tPLZ  
V
OH  
OUTPUT  
3.5V  
1.5V  
3.5V  
1.5V  
OUTPUT  
NORMALLY  
LOW  
SWITCH  
CLOSED  
V
OL  
t
PLH  
0.3V  
0.3V  
VOL  
3V  
1.5V  
0V  
t
PZH  
tPHZ  
OPPOSITE PHASE  
INPUT TRANSITION  
V
OH  
OUTPUT  
NORMALLY  
HIGH  
SWITCH  
OPEN  
1.5V  
0V  
2567 drw 08  
0V  
2567 drw 09  
NOTES:  
1. Diagram shown for input Control Enable-LOW and input Control Disable-  
HIGH  
2. Pulse Generator for All Pulses: Rate 1.0MHz; tF 2.5ns; tR 2.5ns  
6.21  
8
IDT54/74FCT821AT/BT/CT, 823/825AT/BT/CT/DT  
HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
ORDERING INFORMATION  
IDT  
XX  
XXXX  
X
X
Temp. Range  
Device Type  
Package  
Process  
Blank  
Commercial  
B
MIL-STD-883, Class B  
P
Plastic DIP  
D
CERDIP  
E
CERPACK  
L
Leadless Chip Carrier  
Small Outline IC  
Shrink Small Outline Package  
Quarter-size Small Outline Package  
SO  
PY  
Q
821AT  
823AT  
825AT  
821BT  
823BT  
825BT  
821CT  
823CT  
825CT  
823DT  
10-Bit Non-Inverting Register  
9-Bit Non-Inverting Register  
8-Bit Non-Inverting Register  
54  
74  
–55°C to +125°C  
0°C to +70°C  
2567 drw 10  
6.21  
9

相关型号:

IDT54FCT825BTQB

HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
IDT

IDT54FCT825BTSO

HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
IDT

IDT54FCT825BTSOB

HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
IDT

IDT54FCT825C

HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
IDT

IDT54FCT825CD

HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
IDT

IDT54FCT825CDB

HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
IDT

IDT54FCT825CE

HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
IDT

IDT54FCT825CEB

HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
IDT

IDT54FCT825CL

HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
IDT

IDT54FCT825CLB

HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
IDT

IDT54FCT825CP

HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
IDT

IDT54FCT825CPB

HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
IDT