IDT54FCT827BDB [IDT]
HIGH-PERFORMANCE CMOS BUFFERS; 高性能CMOS缓冲器
| 型号： | IDT54FCT827BDB |
| 厂家： | 
INTEGRATED DEVICE TECHNOLOGY |
| 描述： | HIGH-PERFORMANCE CMOS BUFFERS |
| 文件： | 总7页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDT54/74FCT827A
IDT54/74FCT827B
IDT54/74FCT827C
HIGH-PERFORMANCE
CMOS BUFFERS
Integrated Device Technology, Inc.
FEATURES:
• Faster than AMD’s Am29827 series
DESCRIPTION:
The IDT54/74FCT800 series is built using an advanced
• Equivalent to AMD’s Am29827 bipolar buffers in pinout/
function, speed and output drive over full temperature
and voltage supply extremes
dual metal CMOS technology.
The IDT54/74FCT827A/B/C 10-bit bus drivers provide
high-performance bus interface buffering for wide data/ ad-
dress paths or buses carrying parity. The 10-bit buffers have
NAND-ed output enables for maximum control flexibility.
All of the IDT54/74FCT800 high-performance interface
familyaredesignedforhigh-capacitanceloaddrivecapability,
while providing low-capacitance bus loading at both inputs
and outputs. All inputs have clamp diodes and all outputs are
designed for low-capacitance bus loading in high-impedance
state.
• IDT54/74FCT827A equivalent to FAST
• IDT54/74FCT827B 35% faster than FAST
• IDT54/74FCT827C 45% faster than FAST
• IOL = 48mA (commercial), and 32mA (military)
• Clamp diodes on all inputs for ringing suppression
• CMOS power levels (1mW typ. static)
• TTL input and output level compatible
• CMOS output level compatible
• Substantially lower input current levels than AMD’s
bipolar Am29800 series (5µA max.)
• Product available in Radiation Tolerant and Radiation
Enhanced versions
• Military product compliant to MIL-STD-883, Class B
FUNCTIONAL BLOCK DIAGRAM
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
OE1 OE2
2609 drw 01
PRODUCT SELECTOR GUIDE
10-Bit Buffer
IDT54/74FCT827A/B/C
Non-inverting
2609 tbl 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
FAST is a trademark of National Semiconductor Co.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
MAY 1992
1992 Integrated Device Technology, Inc.
7.20
DSC-4612/2
1
IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
LOGIC SYMBOL
INDEX
1
2
3
4
5
6
7
8
9
10
24
23
22
VCC
Y0
Y1
Y2
Y3
OE1
D0
D1
D2
D3
D4
D5
D6
D7
D8
10
10
D0-9
Y0-9
4 3 2
282726
P24-1 21
D24-1 20
1
D2
D3
D4
5
6
7
8
9
10
11
25
Y2
Y3
Y4
NC
Y5
Y6
Y7
24
23
22
21
20
19
E24-1
&
SO24-2
19
18
17
16
Y4
Y5
Y6
Y7
Y8
NC
D5
D6
D7
L28-1
OE1
OE2
15
14
13
1213 1415161718
D9
GND
Y9
OE2
11
12
2609 drw 04
2609 drw 03
2609 drw 02
LCC
TOP VIEW
DIP/CERPACK/SOIC
TOP VIEW
PIN DESCRIPTION
FUNCTION TABLE(1)
Inputs
Output
YI
Name
I/O
Description
OEI
I
When both are LOW, the outputs are
enabled. When either one or both are
HIGH, the outputs are High Z.
10-bit data input.
1
2
OE
DI
Function
OE
L
L
H
L
L
L
H
X
X
L
H
Z
Z
Transparent
DI
YI
I
X
H
Three-State
O
10-bit data output.
X
2609 tbl 02
NOTE:
2609 tbl 03
1. H = HIGH, L = LOW, X = Don’t Care, Z = High Impedance
ABSOLUTE MAXIMUM RATINGS(1)
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol
Parameter(1)
Conditions
Typ. Max. Unit
Symbol
Rating
Commercial
Military
Unit
(2)
VTERM
Terminal Voltage
with Respect to
GND
–0.5 to +7.0 –0.5 to +7.0
V
CIN
Input
Capacitance
Output
VIN = 0V
6
10
pF
COUT
VOUT = 0V
8
12
pF
(3)
VTERM
Terminal Voltage
with Respect to
GND
–0.5 to VCC
0 to +70
–0.5 to VCC
V
Capacitance
NOTE:
2609 tbl 05
1. This parameter is measured at characterization but not tested.
TA
Operating
–55 to +125 °C
Temperature
Temperature
Under Bias
Storage
TBIAS
TSTG
–55 to +125 –65 to +135 °C
–55 to +125 –65 to +150 °C
Temperature
Power Dissipation
PT
0.5
0.5
W
IOUT
DC Output
Current
120
120
mA
NOTES:
2609 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating con-
ditionsforextendedperiodsmayaffectreliability. Noterminalvoltagemay
exceed VCC by +0.5V unless otherwise noted.
2. Input and VCC terminals only.
3. Outputs and I/O terminals only.
7.20
2
IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: VLC = 0.2V; VHC = VCC – 0.2V
Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%
Symbol
Parameter
Input HIGH Level
Test Conditions(1)
Min. Typ.(2) Max.
Unit
VIH
Guaranteed Logic HIGH Level
2.0
—
—
—
—
0.8
5
V
VIL
II H
Input LOW Level
Guaranteed Logic LOW Level
V
Input HIGH Current
VCC = Max.
VI = VCC
—
—
µA
VI = 2.7V
VI = 0.5V
VI = GND
VO = VCC
VO = 2.7V
VO = 0.5V
VO = GND
—
—
5(4)
–5(4)
–5
II L
Input LOW Current
—
—
—
—
IOZH
IOZL
Off State (High Impedance)
Output Current
VCC = Max.
—
—
10
µA
—
—
10(4)
–10(4)
–10
–1.2
—
—
—
—
—
VIK
IOS
Clamp Diode Voltage
Short Circuit Current
Output HIGH Voltage
VCC = Min., IN = –18mA
VCC = Max.(3), VO = GND
—
–0.7
–120
VCC
VCC
4.3
4.3
GND
V
mA
V
–75
VHC
VHC
2.4
2.4
—
VOH
VCC = 3V, VIN = VLC or VHC, IOH = –32µA
—
VCC = Min.
IOH = –300µA
—
VIN = VIH or VIL
IOH = –15mA MIL.
IOH = –24mA COM'L.
—
—
VOL
Output LOW Voltage
VCC = 3V, VIN = VLC or VHC, IOL = 300µA
VLC
(4)
V
VCC = Min.
IOL = 300µA
—
GND VLC
VIN = VIH or VIL
IOL = 32mA MIL.
IOL = 48mA COM'L.
—
0.3
0.3
0.5
0.5
—
NOTES:
2609 tbl 06
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5.0V, +25°C ambient and maximum loading.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. This parameter is guaranteed but not tested.
7.20
3
IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS VLC = 0.2V; VHC = VCC – 0.2V
Symbol
Parameter
Test Conditions(1)
Min. Typ.(2) Max.
Unit
Quiescent Power Supply Current
VCC = Max.
VIN ≥ VHC; V IN ≤ VLC
ICC
—
0.2
1.5
mA
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply Current(4) VCC = Max.
VCC = Max.
∆ICC
—
—
0.5
2.0
mA
VIN = 3.4V(3)
ICCD
VIN ≥ VHC
VIN ≤ VLC
0.15
0.25
mA/
MHz
Outputs Open
OE1 = OE2 = GND
One Input Toggling
50% Duty Cycle
IC
Total Power Supply Current(6)
VCC = Max.
VIN ≥ VHC
VIN ≤ VLC
(FCT)
—
—
—
—
1.7
2.0
3.2
5.2
4.0
5.0
mA
Outputs Open
fi = 10MHz
50% Duty Cycle
OE1 = OE2 = GND
One Bit Toggling
VCC = Max.
Outputs Open
fi = 2.5MHz
VIN = 3.4V
VIN = GND
VIN ≥ VHC
VIN ≤ VLC
(FCT)
6.5(5)
14.5(5)
50% Duty Cycle
OE1 = OE2 = GND
Eight Bits Toggling
VIN = 3.4V
VIN = GND
NOTES:
2609 tbl 07
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5.0V, +25°C ambient.
3. Per TTL driven input (VIN = 3.4V); all other inputs at VCC or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply calculations.
5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested.
6. IC = IQUIESCENT + IINPUTS + IDYNAMIC
IC = ICC + ∆ICC DHNT + ICCD (fCP/2 + fiNi)
ICC = Quiescent Current
∆ICC = Power Supply Current for a TTL High Input (VIN = 3.4V)
DH = Duty Cycle for TTL Inputs High
NT = Number of TTL Inputs at DH
ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
fCP = Clock Frequency for Register Devices (Zero for Non-Register Devices)
fi = Input Frequency
Ni = Number of Inputs at fi
All currents are in milliamps and all frequencies are in megahertz.
7.20
4
IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
IDT54/74FCT827A
Com'l. Mil.
Min.(2) Max. Min.(2) Max. Min.(2) Max. Min.(2) Max. Min.(2) Max. Min.(2) Max.
IDT54/74FCT827B
IDT54/74FCT827C
Com'l. Mil.
Com'l. Mil.
Parameter
Description
Conditions(1)
Unit
t
t
PLH
PHL
Propagation Delay
DI to YI
C
R
C
L
L
L
= 50pF
= 500
= 300pF(3)
= 500
= 50pF
= 500
= 300pF(3)
= 500
= 5pF(3)
= 500
= 50pF
= 500
1.5 8.0 1.5 9.0 1.5 5.0 1.5 6.5 1.5 4.4 1.5 5.0 ns
1.5 15.0 1.5 17.0 1.5 13.0 1.5 14.0 1.5 10.0 1.5 11.0
Ω
R
C
R
C
L
L
L
L
Ω
tPZH
Output Enable Time
OE to Y
1.5 12.0 1.5 13.0 1.5 8.0 1.5 9.0 1.5 7.0 1.5 8.0 ns
1.5 23.0 1.5 25.0 1.5 15.0 1.5 16.0 1.5 14.0 1.5 15.0
tPZL
I
I
Ω
R
C
R
C
R
L
L
L
L
L
Ω
tPHZ
Output Disable Time
OE to Y
1.5 9.0 1.5 9.0 1.5 6.0 1.5 7.0 1.5 5.7 1.5 6.7 ns
tPLZ
I
I
Ω
1.5 10.0 1.5 10.0 1.5 7.0 1.5 8.0 1.5 6.0 1.5 7.0
Ω
NOTES:
1. See test circuit and waveforms.
2609 tbl 08
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. These parameters are guaranteed but not tested.
7.20
5
IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TEST CIRCUITS AND WAVEFORMS
TEST CIRCUITS FOR ALL OUTPUTS
VCC
SWITCH POSITION
Test
Switch
Closed
Open
7.0V
Open Drain
Disable Low
Enable Low
500Ω
VOUT
VIN
Pulse
Generator
D.U.T.
All Other Tests
50pF
CL
500Ω
DEFINITIONS:
CL = Load capacitance: includes jig and probe capacitance.
2609 tbl 09
R T
RT = Termination resistance: should be equal to ZOUT of the Pulse
Generator.
SET-UP, HOLD AND RELEASE TIMES
PULSE WIDTH
3V
1.5V
0V
DATA
INPUT
tSU
t H
LOW-HIGH-LOW
1.5V
3V
1.5V
0V
TIMING
INPUT
PULSE
t W
ASYNCHRONOUS CONTROL
t REM
PRESET
CLEAR
ETC.
3V
1.5V
0V
HIGH-LOW-HIGH
PULSE
1.5V
SYNCHRONOUS CONTROL
PRESET
CLEAR
CLOCK ENABLE
ETC.
3V
1.5V
0V
t H
tSU
PROPAGATION DELAY
ENABLE AND DISABLE TIMES
ENABLE
DISABLE
3V
3V
CONTROL
INPUT
1.5V
0V
SAME PHASE
INPUT TRANSITION
1.5V
0V
tPZL
tPLZ
tPHL
tPLH
3.5V
1.5V
3.5V
OUTPUT
NORMALLY
LOW
VOH
SWITCH
CLOSED
OUTPUT
1.5V
0.3V
0.3V
VOL
VOH
tPZH
tPHZ
VOL
tPLH
tPHL
OUTPUT
NORMALLY
HIGH
SWITCH
OPEN
3V
1.5V
0V
OPPOSITE PHASE
INPUT TRANSITION
1.5V
0V
0V
NOTES
2609 drw 11
1. Diagram shown for input Control Enable-LOW and input Control
Disable-HIGH.
2. Pulse Generator for All Pulses: Rate ≤ 1.0 MHz; ZO ≤ 50Ω; tF ≤ 2.5ns;
tR ≤ 2.5ns.
7.20
6
IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ORDERING INFORMATION
XX
X
X
IDTXXFCT
Device Type
Package
Process
Blank
B
Commercial
MIL-STD-883, Class B
P
Plastic DIP
D
CERDIP
E
CERPACK
L
SO
Leadless Chip Carrier
Small Outline IC
827A
827B
827C
Non-Inverting 10-Bit Buffer
Fast Non-Inverting 10-Bit Buffer
Super Fast Non-Inverting 10-Bit Buffer
54
74
–55°C to +125°C
0°C to +70°C
2609 cnv* 10
7.20
7
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