IDT71V67803S150BQ [IDT]
Cache SRAM, 512KX18, 3.8ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165;型号: | IDT71V67803S150BQ |
厂家: | INTEGRATED DEVICE TECHNOLOGY |
描述: | Cache SRAM, 512KX18, 3.8ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165 时钟 静态存储器 内存集成电路 |
文件: | 总23页 (文件大小:506K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
256K X 36, 512K X 18
3.3VSynchronousSRAMs
3.3V I/O, Burst Counter
Advance
Information
IDT71V67603
IDT71V67803
PipelinedOutputs,SingleCycleDeselect
Features
data, address and control registers. Internal logic allows the SRAM to
generateaself-timedwritebaseduponadecisionwhichcanbeleftuntil
theendofthewritecycle.
◆
256K x 36, 512K x 18 memory configurations
◆
Supports high system speed:
– 150MHz 3.8ns clock access time
– 133MHz 4.2ns clock access time
LBO input selects interleaved or linear burst mode
Theburstmodefeatureoffersthehighestlevelofperformancetothe
systemdesigner,astheIDT71V67603/7803canprovidefourcyclesof
dataforasingleaddresspresentedtotheSRAM. Aninternalburstaddress
counteracceptsthefirstcycleaddressfromtheprocessor,initiatingthe
accesssequence.Thefirstcycleofoutputdatawillbepipelinedforone
cycle before it is available on the next rising clock edge. If burst mode
operationisselected(ADV=LOW),thesubsequentthreecyclesofoutput
datawillbeavailabletotheuseronthenextthreerisingclockedges. The
orderofthesethreeaddressesaredefinedbytheinternalburstcounter
andthe LBOinputpin.
◆
◆
Self-timed write cycle with global write control (GW), byte
write enable (BWE), and byte writes (BWx)
3.3V core power supply
Power down controlled by ZZ input
3.3V I/O supply (VDDQ)
◆
◆
◆
◆
Packaged in a JEDEC Standard 100-pin thin plastic quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch
ball grid array (fBGA).
The IDT71V67603/7803 SRAMs utilize IDT’s latest high-performance
CMOSprocessandarepackagedinaJEDECstandard14mmx20mm100-
pin thinplasticquadflatpack(TQFP), a119ballgridarray(BGA) and a 165
fine pitchballgridarray(fBGA).
Description
The IDT71V67603/7803 are high-speed SRAMs organized as
256K x 36/512K x 18. The IDT71V67603/7803 SRAMs contain write,
PinDescriptionSummary
A0-A18
Address Inputs
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
I/O
Synchronous
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Chip Enable
CE
CS0, CS1
OE
Chip Selects
Output Enable
Global Write Enable
Byte Write Enable
Individual Byte Write Selects
Clock
GW
BWE
(1)
BW1, BW2, BW3, BW4
CLK
Burst Address Advance
Address Status (Cache Controller)
Address Status (Processor)
Linear / Interleaved Burst Order
Sleep Mode
Synchronous
Synchronous
Synchronous
DC
ADV
ADSC
ADSP
LBO
ZZ
Asynchronous
Synchronous
N/A
I/O0-I/O31, I/OP1-I/OP4
VDD, VDDQ
Data Input / Output
Core Power, I/O Power
Ground
Supply
Supply
VSS
N/A
5310 tbl 01
NOTE:
1. BW3 and BW4 are not applicable for the IDT71V67802.
OCTOBER 2001
1
©2000IntegratedDeviceTechnology,Inc.
DSC-5310/02
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
PinDefinitions(1)
Symbol
Pin Function
I/O
Active
Description
0
18
A -A
ADSC
ADSP
ADV
Address Inputs
I
N/A
Synchronous Address inputs. The address register is triggered by a combination of the
rising edge of CLK and ADSC Low or ADSP Low and CE Low.
Address Status
(Cache Controller)
I
I
I
LOW
LOW
LOW
Synchronous Address Status from Cache Controller. ADSC is an active LOW input that is
used to load the address registers with new addresses.
Address Status
(Processor)
Synchronous Address Status from Processor. ADSP is an active LOW input that is used to
load the address registers with new addresses. ADSP is gated by CE.
Burst Address
Advance
Synchronous Address Advance. ADV is an active LOW input that is used to advance the
internal burst counter, controlling burst access after the initial address is loaded. When the
input is HIGH the burst counter is not incremented; that is, there is no address advance.
Byte Write Enable
I
LOW
Synchronous byte write enable gates the byte write inputs BW -
. If
1 BW4 BWE
is LOW at the
BWE
rising edge of CLK then BWx inputs are passed to the next stage in the circuit. If BWE is
HIGH then the byte write inputs are blocked and only GW can initiate a write cycle.
1
0-7
P1
2
8-15
P2
Individual Byte
Write Enables
I
I
I
LOW
LOW
N/A
Synchronous byte write enables. BW controls I/O , I/O , BW controls I/O , I/O , etc.
1
4
BW -BW
Any active byte write causes all outputs to be disabled.
0
1
Chip Enable
Synchronous chip enable. CE is used with CS and CS to enable the IDT71V67603/7803.
CE
CE also gates ADSP.
CLK
Clock
This is the clock input. All timing references for the device are made with respect to this
input.
0
0
1
CS
Chip Select 0
Chip Select 1
I
I
I
HIGH
LOW
LOW
Synchronous active HIGH chip select. CS is used with CE and CS to enable the chip.
1
0
Synchronous active LOW chip select. CS is used with CE and CS to enable the chip.
CS1
GW
Global Write
Enable
Synchronous global write enable. This input will write all four 9-bit data bytes when LOW
on the rising edge of CLK. GW supersedes individual byte write enables.
0
31
I/O -I/O
Data Input/Output
I/O
I
N/A
Synchronous data input/output (I/O) pins. Both the data input path and data output path are
registered and triggered by the rising edge of CLK.
P1
I/O -I/O
P4
Linear Burst Order
LOW
Asynchronous burst order selection input. When LBO is HIGH, the interleaved burst
sequence is selected. When LBO is LOW the Linear burst sequence is selected. LBO is a
static input and must not change state while the device is operating.
LBO
Output Enable
I
LOW
Asynchronous output enable. When OE is LOW the data output drivers are enabled on the
I/O pins if the chip is also selected. When OE is HIGH the I/O pins are in a high-
impedance state.
OE
DD
V
Power Supply
Power Supply
Ground
N/A
N/A
N/A
N/A
I
N/A
N/A
3.3V core power supply.
DDQ
V
3.3V I/O Supply.
SS
V
N/A
Ground.
NC
ZZ
No Connect
Sleep Mode
N/A
NC pins are not electrically connected to the device.
HIGH
Asynchronous sleep mode input. ZZ HIGH will gate the CLK internally and power down the
IDT71V67603/7803 to its lowest power consumption level. Data retention is guaranteed in
Sleep Mode.
5310 tbl 02
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
6.422
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
FunctionalBlockDiagram
LBO
ADV
INTERNAL
ADDRESS
CEN
256K x 36/
512K x 18-
BIT
MEMORY
ARRAY
CLK
2
Burst
Logic
18/19
Binary
Counter
ADSC
A0*
A1*
Q0
Q1
CLR
ADSP
2
CLK EN
A0,A1
A2–A18
A0–A17/18
GW
ADDRESS
REGISTER
36/18
36/18
18/19
Byte 1
Write Register
BWE
Byte 1
Write Driver
1
BW
9
Byte 2
Write Register
Byte 2
Write Driver
BW2
9
Byte 3
Write Register
Byte 3
Write Driver
BW3
BW4
9
Byte 4
Write Register
Byte 4
Write Driver
9
OUTPUT
REGISTER
CE
Q
D
CS0
Enable
DATA INPUT
REGISTER
1
CS
Register
CLK EN
ZZ
Powerdown
D
Q
Enable
Delay
Register
OE
OUTPUT
BUFFER
OE
,
36/18
I/O0–I/O31
I/OP1–I/OP4
5301 drw 01
6.42
3
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
AbsoluteMaximumRatings(1)
RecommendedOperating
TemperatureandSupplyVoltage
Symbol
Rating
Commercial
Unit
Temperature(1)
(2)
SS
V
DD
V
DDQ
V
Grade
TERM
V
Terminal Voltage with
Respect to GND
-0.5 to +4.6
V
Commercial
0°C to +70°C
0V
3.3V±5%
3.3V±5%
(3,6)
(4,6)
(5,6)
TERM
V
DD
Terminal Voltage with
Respect to GND
-0.5 to V
V
V
5310 tbl 04
NOTE:
1. TA is the "instant on" case temperature.
TERM
V
DD
-0.5 to V +0.5
Terminal Voltage with
Respect to GND
RecommendedDCOperating
Conditions
TERM
V
DDQ
Terminal Voltage with
Respect to GND
-0.5 to V +0.5
V
Symbol
Parameter
Core Supply Voltage
I/O Supply Voltage
Supply Voltage
Min. Typ.
3.135 3.3
3.135 3.3
Max.
Unit
V
oC
oC
oC
W
(7)
A
-0 to +70
-55 to +125
-55 to +125
T
Operating Temperature
DD
V
3.465
3.465
0
BIAS
Temperature
Under Bias
T
DDQ
V
V
SS
V
0
0
V
STG
Storage
Temperature
T
____
IH
V
DD
Input High Voltage - Inputs
Input High Voltage -I/O
Input Low Voltage
2.0
2.0
V
+0.3
V
____
____
IH
V
DDQ
T
V
+0.3
0.8
V
P
Power Dissipation
DC Output Current
2.0
50
(1)
IL
V
OUT
-0.3
V
I
mA
5310 tbl 05
5310 tbl 03
NOTES:
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
1. VIL (min) = -1.0V for pulse width less than tCYC/2, once per cycle.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supplies have
ramped up. Power supply sequencing is not necessary; however, the voltage
on any input or I/O pin cannot exceed VDDQ during power supply ramp up.
7. TA is the "instant on" case temperature.
165fBGACapacitance
(TA = +25°C, f = 1.0MHz)
100PinTQFPCapacitance
(TA = +25°C, f = 1.0MHz)
Parameter(1)
Input Capacitance
I/O Capacitance
Conditions
VIN = 3dV
VOUT = 3dV
Max. Unit
Symbol
Parameter(1)
Input Capacitance
I/O Capacitance
Conditions
VIN = 3dV
VOUT = 3dV
Max. Unit
Symbol
CIN
CIN
5
7
pF
TDB
TDB
pF
CI/O
pF
CI/O
pF
5310 tbl 07
5310 tbl 07b
119BGACapacitance
(TA = +25°C, f = 1.0MHz)
Symbol
CIN
Parameter(1)
Input Capacitance
I/O Capacitance
Conditions
VIN = 3dV
VOUT = 3dV
Max. Unit
7
7
pF
CI/O
pF
5310 tbl 07a
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
6.442
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Pin Configuration 256K x 36, 100-Pin TQFP
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
I/OP3
I/O16
I/O17
VDDQ
VSS
I/O18
I/O19
I/O20
I/O21
VSS
VDDQ
I/O22
I/OP2
I/O15
I/O14
VDDQ
VSS
I/O13
I/O12
I/O11
I/O10
VSS
2
79
78
77
3
4
5
76
75
74
73
6
7
8
9
72
71
10
11
70
69
68
67
66
VDDQ
12
I/O9
I/O8
VSS
NC
13
I/O23
VDD / NC(1)
14
15
VDD
16
65
64
NC
VSS
I/O24
I/O25
VDDQ
VSS
I/O26
I/O27
I/O28
I/O29
VSS
VDDQ
I/O30
I/O31
I/OP4
VDD
ZZ(2)
I/O7
I/O6
VDDQ
VSS
I/O5
I/O4
I/O3
I/O2
VSS
17
18
63
62
19
20
61
60
59
58
57
56
55
21
22
23
24
25
26
27
54
53
52
51
VDDQ
I/O1
I/O0
28
,
29
30
I/OP1
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
5301 drw 02
Top View
NOTES:
1. Pin 14 can either be directly connected to VDD, or connected to an input voltage ≥ VIH, or left unconnected.
2. Pin 64 can be left unconnected and the device will always remain in active mode.
6.42
5
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Pin Configuration 512K x 18, 100-Pin TQFP
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
NC
NC
NC
VDDQ
VSS
NC
NC
I/O8
I/O9
VSS
VDDQ
I/O10
A10
NC
NC
2
79
78
77
3
4
VDDQ
VSS
NC
I/OP1
I/O7
I/O6
VSS
VDDQ
I/O5
I/O4
VSS
NC
VDD
ZZ(2)
I/O3
I/O2
VDDQ
VSS
I/O1
I/O0
NC
5
76
75
74
73
6
7
8
9
72
71
10
11
70
69
68
67
66
65
64
12
13
I/O11
VDD / NC(1)
14
15
VDD
NC
VSS
I/O12
I/O13
VDDQ
VSS
I/O14
I/O15
I/OP2
NC
VSS
VDDQ
NC
NC
NC
16
17
18
63
62
19
20
61
60
59
58
57
56
55
21
22
23
24
25
NC
VSS
VDDQ
NC
NC
NC
26
,
27
54
53
28
29
52
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
5310 drw 03
Top View
NOTES:
1. Pin 14 can either be directly connected to VDD, or connected to an input voltage ≥ VIH, or left unconnected.
2. Pin 64 can be left unconnected and the device will always remain in active mode.
6.462
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Pin Configuration 256K x 36, 119 BGA
1
2
3
4
5
6
7
DDQ
6
4
8
16
DDQ
V
A
B
C
D
E
F
V
A
A
A
A
A
A
A
ADSP
ADSC
(4)
3
2
9
A17
NC
NC
CS
NC
NC
0
7
DD
V
12
A
15
A
A
16
I/O
P3
I/O
SS
SS
SS
SS
SS
SS
P2
I/O
15
I/O
V
V
V
NC
CE
V
V
V
17
I/O
18
I/O
13
I/O
14
I/O
DDQ
19
I/O
12
I/O
DDQ
V
V
OE
20
21
11
10
I/O
G
H
J
I/O
I/O
I/O
2
3
BW
ADV
GW
BW
22
I/O
23
I/O
SS
V
SS
V
9
I/O
8
I/O
DDQ
DD
DD
V
DD
6
DDQ
V
V
V
NC
NC
V
24
I/O
26
I/O
SS
V
SS
V
7
I/O
K
L
CLK
NC
I/O
25
I/O
27
I/O
4
I/O
5
I/O
4
1
BW
BW
DDQ
28
SS
V
SS
V
3
DDQ
1
M
N
P
R
T
V
I/O
I/O
V
BWE
29
I/O
30
I/O
SS
V
1
SS
V
2
I/O
A
I/O
31
I/O
P4
SS
V
0
SS
V
0
I/O
P1
I/O
I/O
A
(1)
NC
5
DD
V
13
NC
A
V
DD / NC
A
LBO
(2)
10
A
11
A
14
A
,
NC
NC
NC
ZZ
DNU(3)
DNU(3)
U
V
DNU(3)
DNU(3)
DNU(3)
DDQ
DDQ
V
5310 drw 04
Top View
Pin Configuration 512K x 18, 119 BGA
1
2
3
4
5
6
7
DDQ
6
4
8
16
DDQ
V
A
B
C
D
E
F
V
A
A
A
A
A
ADSP
ADSC
(4)
3
A
9
NC
NC
CS
A18
NC
NC
NC
0
7
A
2
A
DD
V
13
A
17
A
8
I/O
SS
SS
SS
SS
SS
7
I/O
NC
V
V
V
NC
V
V
V
V
9
I/O
SS
SS
6
I/O
NC
DDQ
NC
CE
OE
5
I/O
DDQ
V
V
NC
10
I/O
4
I/O
G
H
J
NC
NC
BW2
ADV
GW
11
I/O
SS
V
SS
3
I/O
NC
V
NC
DDQ
V
DD
DD
V
DD
DDQ
V
V
NC
V
NC
12
SS
SS
2
I/O
K
L
NC
I/O
NC
V
CLK
NC
V
NC
13
I/O
SS
1
I/O
V
NC
1
BW
DDQ
14
SS
SS
V
DDQ
V
M
N
P
R
T
V
I/O
V
V
V
NC
BWE
15
SS
SS
1
0
SS
0
I/O
I/O
NC
NC
A
V
V
NC
P2
SS
P1
I/O
I/O
A
NC
(1)
5
DD
V
12
A
DD
/ NC
NC
NC
DDQ
A
V
NC
LBO
(2)
,
10
15
A
14
A
11
A
A
NC
ZZ
DNU(3)
DDQ
V
DNU(3)
DNU(3)
U
V
DNU(3)
DNU(3)
5310 drw 05
Top View
NOTES:
1. R5 can either be directly connected to VDD, or connected to an input voltage ≥ VIH, or left unconnected.
2. T7 can be left unconnected and the device will always remain in active mode.
3. DNU= Do not use; these signals can either be left unconnected or tied to Vss.
4. On future 18M device CS0 will be removed, B2 will be used for address expansion.
6.42
7
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Pin Configuration 256K x 36, 165 fBGA
1
2
3
4
5
6
7
8
9
10
A8
11
(3)
A
B
C
D
E
F
NC
A7
NC
CE
BW3
BW4
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
BW2
BW1
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
CS1
CLK
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
BWE
GW
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
ADSC
OE
ADV
(3)
NC
A6
CS0
A9
NC
ADSP
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
I/OP3
I/O17
I/O19
I/O21
I/O23
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
NC
I/OP2
I/O14
I/O12
I/O10
I/O8
I/O16
I/O18
I/O20
I/O22
NC
I/O15
I/O13
I/O11
I/O9
NC
G
H
J
(1)
(2)
VDD
ZZ
I/O25
I/O27
I/O29
I/O31
I/OP4
NC
I/O24
I/O26
I/O28
I/O30
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
I/O7
I/O5
I/O3
I/O1
NC
I/O6
I/O4
I/O2
K
L
M
N
P
I/O0
I/OP1
(3)
NC
(3)
(4)
(4)
5
A
2
A
1
A
10
A
13
A
14
A
17
A
NC
DNU
DNU
(3)
(4)
(4)
R
NC
A4
A3
DNU
A0
DNU
A11
A12
A15
A16
LBO
5310 tbl 17a
Pin Configuration 512K x 18, 165 fBGA
1
2
3
4
5
6
7
BWE
8
ADSC
OE
9
10
11
(3)
A
B
C
D
E
F
NC
NC
NC
NC
NC
NC
NC
A7
NC
A8
A9
A10
CE
BW2
NC
CS1
CLK
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
ADV
(3)
A6
CS0
NC
BW1
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
GW
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
ADSP
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
NC
I/O8
I/O9
I/O10
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
A2
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
A11
NC
NC
NC
NC
NC
NC
I/O3
I/O2
I/O1
I/O0
NC
A15
A16
I/OP1
I/O7
I/O6
I/O5
I/O4
G
H
J
I/O
11
(1)
(2)
VDD
I/O12
I/O13
I/O14
I/O15
I/OP2
NC
NC
NC
NC
NC
NC
NC
ZZ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
A5
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
A14
NC
NC
NC
NC
NC
A18
K
L
M
N
P
(3)
NC
(3)
(4)
(4)
NC
DNU
A1
A0
DNU
(3)
(4)
(4)
R
NC
A4
A3
DNU
DNU
A12
A13
A17
LBO
5310 tbl 17b
NOTES:
1. H1 can either be directly connected to VDD, or connected to an input voltage ≥ VIH, or left unconnected.
2. H11 can be left unconnected and the device will always remain in active mode.
3. Pin N6, B11, A1, R2 and P2 are reserved for 18M, 36M, 72M, and 144M and 288M respectively.
4. DNU= Do not use; these signals can either be left unconnected or tied to Vss.
6.482
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V ± 5%)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
___
LI
|I |
DD
V
IN
DD
Input Leakage Current
= Max., V = 0V to V
5
µA
(1)
___
___
___
LZZ
ZZ and LBO Input Leakage Current
Output Leakage Current
Output Low Voltage
DD
IN
DD
|I
|
V
= Max., V = 0V to V
30
5
µA
µA
V
LO
|I |
OUT
V
DDQ
= 0V to V , Device Deselected
OL
V
OL
DD
I
= +8mA, V = Min.
0.4
___
OH
V
OH
I
DD
Output High Voltage
= -8mA, V = Min.
2.4
V
5310 tbl 08
NOTE:
1. The LBO pin will be internally pulled to VDD if it is not actively driven in the application and the ZZ pin will be internally pulled to VSS if not actively driven.
DC Electrical Characteristics Over the Operating
TemperatureandSupplyVoltageRange(1)
Symbol
Parameter
Test Conditions
150MHz
133MHz
Unit
DD
Operating Power Supply
Current
Device Selected, Outputs Open, V = Max.,
DDQ
V
305
260
mA
IDD
(2)
IN IH IL MAX
= Max., V > V or < V , f = f
ISB1
CMOS Standby Power
Supply Current
Device Deselected, Outputs Open, VDD = Max.,
VDDQ = Max., VIN > VHD or < VLD, f = 0(2,3)
50
155
50
50
150
50
mA
mA
ISB2
Clock Running Power
Supply Current
Device Deselected, Outputs Open, VDD = Max.,
(2,3)
VDDQ = Max., VIN > VHD or < VLD, f = fMAX
ZZ > VHD, VDD = Max.
Full Sleep Mode Supply
Current
mA
ZZ
I
5310 tbl 09
NOTES:
1. All values are maximum guaranteed values.
2. At f = fMAX, inputs are cycling at the maximum frequency of read cycles of 1/tCYC while ADSC = LOW; f=0 means no input lines are changing.
3. For I/Os VHD = VDDQ - 0.2V, VLD = 0.2V. For other inputs VHD = VDD - 0.2V, VLD = 0.2V.
VDDQ/2
AC Test Conditions
(VDDQ = 3.3V)
AC Test Load
50Ω
Input Pulse Levels
0 to 3V
2ns
I/O
Z0 = 50Ω
Input Rise/Fall Times
,
5310 drw 06
Input Timing Reference Levels
Output Timing Reference Levels
AC Test Load
1.5V
Figure 1. AC Test Load
6
5
4
1.5V
See Figure 1
5310 tbl 10
3
∆tCD
(Typical, ns)
2
1
20 30 50
80 100
Capacitance (pF)
200
5310 drw 07
,
Figure 2. Lumped Capacitive Load, Typical Derating
6.42
9
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
SynchronousTruthTable(1,3)
Operation
Address
CS0
CLK
I/O
CE
CS1
ADSP ADSC ADV
GW
BWE
BWx
OE
Used
(2)
Deselected Cycle, Power Down
Deselected Cycle, Power Down
Deselected Cycle, Power Down
Deselected Cycle, Power Down
Deselected Cycle, Power Down
Read Cycle, Begin Burst
None
None
H
L
X
X
L
X
H
X
H
X
L
X
L
L
X
X
L
X
X
X
X
X
X
X
X
X
X
X
X
L
X
X
X
X
X
X
X
H
H
H
H
L
X
X
X
X
X
X
X
H
L
X
X
X
X
X
X
X
X
H
H
L
X
X
X
X
X
L
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HI-Z
HI-Z
HI-Z
HI-Z
HI-Z
DOUT
HI-Z
DOUT
DOUT
HI-Z
DIN
None
L
L
None
L
X
L
X
X
L
None
L
L
External
External
External
External
External
External
External
Next
L
H
H
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
Read Cycle, Begin Burst
L
L
L
H
L
Read Cycle, Begin Burst
L
L
H
H
H
H
H
H
H
H
H
X
X
X
X
H
H
X
X
H
H
H
H
X
X
X
X
H
H
X
X
Read Cycle, Begin Burst
L
L
L
L
Read Cycle, Begin Burst
L
L
L
L
H
X
X
L
Write Cycle, Begin Burst
L
L
L
L
Write Cycle, Begin Burst
L
L
L
X
H
H
X
X
H
H
X
X
L
X
X
X
H
H
X
X
H
H
L
DIN
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
X
X
X
X
H
H
H
H
X
X
H
H
X
X
X
X
H
H
H
H
X
X
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
DOUT
HI-Z
DOUT
HI-Z
DOUT
HI-Z
DOUT
HI-Z
Next
L
H
L
Next
L
Next
L
H
L
Next
L
Next
L
H
L
Next
L
Next
L
H
X
X
X
X
L
IN
D
Next
L
Next
L
X
L
X
L
DIN
DIN
Next
L
H
L
Next
L
X
H
H
X
X
H
H
X
X
L
X
X
X
H
H
X
X
H
H
L
DIN
Current
Current
Current
Current
Current
Current
Current
Current
Current
Current
Current
Current
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
DOUT
HI-Z
H
L
OUT
D
H
L
HI-Z
DOUT
HI-Z
H
L
DOUT
HI-Z
H
X
X
X
X
IN
D
X
L
X
L
DIN
DIN
H
L
X
X
DIN
5310 tbl 11
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. OE is an asynchronous input.
3. ZZ = low for this table.
6.1402
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Synchronous Write Function Truth Table(1, 2)
Operation
GW
H
H
L
BWE
H
L
BW1
BW2
X
BW3
X
BW4
X
Read
X
Read
H
H
H
H
Write all Bytes
Write all Bytes
Write Byte 1(3)
Write Byte 2(3)
Write Byte 3(3)
Write Byte 4(3)
X
L
X
X
X
X
H
H
H
H
H
L
L
L
L
L
L
H
H
H
L
H
L
H
H
L
H
H
L
H
L
H
H
H
L
5310 tbl 12
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. BW3 and BW4 are not applicable for the IDT71V67803.
3. Multiple bytes may be selected during the same cycle.
AsynchronousTruthTable(1)
Operation(2)
ZZ
I/O Status
Power
OE
Read
Read
L
H
X
X
X
L
L
L
L
H
Data Out
High-Z
Active
Active
Write
High-Z – Data In
High-Z
Active
Deselected
Sleep Mode
Standby
Sleep
High-Z
5310 tbl 13
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. Synchronous function pins must be biased appropriately to satisfy operation requirements.
InterleavedBurstSequenceTable(LBO=VDD)
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
0
A1
A0
1
A1
1
A0
0
A1
A0
First Address
0
0
1
1
0
0
1
1
1
1
0
0
1
Second Address
Third Address
1
0
1
1
0
0
1
0
0
1
Fourth Address(1)
1
0
0
1
0
5310 tbl 14
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
LinearBurstSequenceTable(LBO=VSS)
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
0
A0
0
A1
0
A0
1
A1
1
A0
0
A1
1
A0
First Address
1
Second Address
Third Address
0
1
1
0
1
1
0
0
1
0
1
1
0
0
0
1
Fourth Address(1)
1
1
0
0
0
1
1
0
5310 tbl 15
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
6.42
11
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
AC Electrical Characteristics
(VDD = 3.3V ±5%, TA = 0 to 70°C)
150MHz
133MHz
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
____
____
____
____
tCYC
Clock Cycle Time
6.7
2.6
2.6
7.5
3
ns
ns
ns
(1)
Clock High Pulse Width
Clock Low Pulse Width
tCH
____
____
(1)
3
tCL
Output Parameters
____
____
tCD
Clock High to Valid Data
3.8
4.2
ns
ns
ns
____
____
tCDC
Clock High to Data Change
1.5
0
1.5
0
____
____
(2)
Clock High to Output Active
Clock High to Data High-Z
tCL Z
(2)
1.5
3.8
1.5
4.2
ns
ns
ns
ns
tCHZ
____
____
tOE
Output Enable Access Time
Output Enable Low to Output Active
Output Enable High to Output High-Z
3.8
4.2
____
____
(2)
0
0
tOLZ
____
____
(2)
3.8
4.2
tOHZ
Set Up Times
____
____
____
____
____
____
____
____
____
____
____
____
tSA
tSS
Address Setup Time
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
ns
ns
ns
ns
ns
ns
Address Status Setup Time
Data In Setup Time
tSD
tSW
tSAV
tSC
Write Setup Time
Address Advance Setup Time
Chip Enable/Select Setup Time
Hold Times
____
____
____
____
____
____
____
____
____
____
____
____
tHA
tHS
Address Hold Time
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
ns
ns
ns
ns
ns
ns
Address Status Hold Time
Data In Hold Time
tHD
tHW
tHAV
tHC
Write Hold Time
Address Advance Hold Time
Chip Enable/Select Hold Time
Sleep Mode and Configuration Parameters
____
____
____
____
tZZPW
ZZ Pulse Width
100
100
27
100
100
30
ns
ns
(3)
ZZ Recovery Time
Configuration Set-up Time
tZZR
____
____
(4)
ns
tCFG
5310 tbl 16
NOTES:
1. Measured as HIGH above VIH and LOW below VIL.
2. Transition is measured ±200mV from steady-state.
3. Device must be deselected when powered-up from sleep mode.
4. tCFG is the minimum time required to configure the device based on the LBO input. LBO is a static input and must not change during normal operation.
6.1422
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Timing Waveform of Pipelined Read Cycle(1,2)
,
6.42
13
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Timing Waveform of Combined Pipelined Read and Write Cycles(1,2,3)
,
6.1442
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Timing Waveform of Write Cycle No. 1 GW Controlled(1,2,3)
,
6.42
15
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Timing Waveform of Write Cycle No. 2 Byte Controlled(1,2,3)
,
6.1462
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Timing Waveform of Sleep (ZZ) and Power-Down Modes(1,2,3)
,
6.42
17
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Non-Burst Read Cycle Timing Waveform
CLK
ADSP
ADSC
Av
Aw
Ax
Ay
Az
ADDRESS
GW, BWE, BWx
CE, CS1
CS0
OE
(Av)
(Aw)
(Ax)
(Ay)
DATAOUT
,
5310 drw 14
NOTES:
1. ZZ input is LOW, ADV is HIGH and LBO is Don't Care for this cycle.
2. (Ax) represents the data for address Ax, etc.
3. For read cycles, ADSP and ADSC function identically and are therefore interchangable.
Non-Burst Write Cycle Timing Waveform
CLK
ADSP
ADSC
Av
Aw
Ax
Ay
Az
ADDRESS
GW
CE, CS1
CS0
(Av)
(Aw)
(Ax)
(Ay)
(Az)
DATAIN
,
5310 drw 15
NOTES:
1. ZZ input is LOW, ADV and OE are HIGH, and LBO is Don't Care for this cycle.
2. (Ax) represents the data for address Ax, etc.
3. Although only GW writes are shown, the functionality of BWE and BWx together is the same as GW.
4. For write cycles, ADSP and ADSC have different limitations.
6.1482
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
100-Pin Plastic Thin Quad Flatpack (TQFP) Package Diagram Outline
6.42
19
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
119 Ball Grid Array (BGA) Package Diagram Outline
6.2402
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
165 Fine Pitch Ball Grid Array (fBGA) Package Diagram Outline
6.42
21
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
OrderingInformation
IDT
XXX
S
X
XX
Device
Type
Power Speed
Package
100-pin Plastic Thin Quad Flatpack (TQFP)
PF
BG
BQ
119 Ball Grid Array (BGA)
165 fine Pitch Ball Grid Array
150
133
Frequency in Megahertz
256K x 36 Pipelined Burst Synchronous SRAM
512K x 18 Pipelined Burst Synchronous SRAM
71V67603
71V67803
,
5310 drw 13
6.2422
IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
DatasheetDocumentHistory
12/31/99
Createddatasheetfrom71V676and71V678datasheets.
I/Ovoltage andspeedgrade offerings have beensplitintoseparate partnumbers.
Seethefollowingdatasheetsfor:
3.3VI/O, 133–166MHz
2.5VI/O, 133–166MHz
3.3VI/O, 183–200MHz
2.5VI/O, 183–200MHz
71V67603
71V67602
71V67613
71V67612
04/26/00
05/24/00
07/12/00
Pg. 4
AddcapacitanceforBGApackage;InsertclarificationnotetoAbsoluteMaxRatingsandRecommended
OperatingTemperaturetables.
Replace PinU6with TRST pininBGApinconfiguration;Addpindescriptionnote inpinout
Inserted100pinTQFPPackageDiagramOutline
Pg. 7
Pg. 18
Pg. 1,8,4,21 Add new package offering, 13 x 15 fBGA
22
Pg. 5,6,7,8 Correct note 2 in BGA and TQFP pinouts
Pg. 20
Pg. 5,6
Pg. 7
Correctioninthe119BGAPackageDiagramOutline
RemovenotefromTQFPpinout
Add/RemovereferencenotefromBG119pinout
RemovenotefromBQ165pinout
Pg. 9
Pg. 20
Pg. 9
Pg. 1,2
Pg. 7,8
Pg. 9
UpdateBG119PackageDiagramOutlinedimensions
UpdatedISB2levels forF=133-166MHz
Remove 166MHz and JTAG pins
Updated pins U2-U6 to DNU and P5,P7,R5 & R7 to DNU
Remove 166MHz and raise range by 10mA on 150Mhz and 133MHz
12/18/00
10/29/01
Pg. 12,22 Remove166MHz
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6.42
23
相关型号:
IDT71V67803S150BQG
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect
IDT
IDT71V67803S150BQGI
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect
IDT
IDT71V67803S150PFG
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect
IDT
IDT71V67803S150PFG8
Cache SRAM, 512KX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
IDT
IDT71V67803S150PFGI
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect
IDT
IDT71V67803S150PFGI8
Cache SRAM, 512KX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
IDT
IDT71V67803S150PFI
Cache SRAM, 512KX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
IDT
IDT71V67803S166BGG
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect
IDT
IDT71V67803S166BGGI
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect
IDT
IDT71V67803S166BQG
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect
IDT
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