IDT74FCT827BTSO [IDT]
FAST CMOS 10-BIT BUFFERS; 快速CMOS 10位缓冲器
| 型号： | IDT74FCT827BTSO |
| 厂家： | 
INTEGRATED DEVICE TECHNOLOGY |
| 描述： | FAST CMOS 10-BIT BUFFERS |
| 文件： | 总7页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDT54/74FCT827AT/BT/CT/DT
IDT54/74FCT2827AT/BT/CT
FAST CMOS 10-BIT
BUFFERS
Integrated Device Technology, Inc.
DESCRIPTION:
FEATURES:
The FCT827T is built using an advanced dual metal CMOS
technology.
• Common features:
– Low input and output leakage ≤1µA (max.)
– CMOS power levels
– True TTL input and output compatibility
– VOH = 3.3V (typ.)
The FCT827T/FCT2827T 10-bit bus drivers provide high-
performance bus interface buffering for wide data/address
pathsorbusescarryingparity. The10-bit buffershaveNAND-
ed output enables for maximum control flexibility.
All of the FCT827T high-performance interface family are
designed for high-capacitance load drive capability, while
providing low-capacitance bus loading at both inputs and
outputs.Allinputshaveclampdiodestogroundandalloutputs
are designed for low-capacitance bus loading in high-imped-
ance state.
The FCT2827T has balanced output drive with current
limiting resistors. This offers low ground bounce, minimal
undershoot and controlled output fall times-reducing the need
for external series terminating resistors. FCT2827T parts are
plug-in replacements for FCT827T parts.
– VOL = 0.3V (typ.)
– Meets or exceeds JEDEC standard 18 specifications
– Product available in Radiation Tolerant and Radiation
Enhanced versions
– Military product compliant to MIL-STD-883, Class B
and DESC listed (dual marked)
– Available in DIP, SOIC, SSOP, QSOP, CERPACK
and LCC packages
• Features for FCT827T:
– A, B, C and D speed grades
– High drive outputs (-15mA IOH, 48mA IOL)
• Features for FCT2827T:
– A, B and C speed grades
– Resistor outputs (-15mA IOH, 12mA IOL Com.)
(-12mA IOH, 12mA IOL Mil.)
– Reduced system switching noise
FUNCTIONAL BLOCK DIAGRAM
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
OE1 OE2
2573 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AUGUST 1995
1995 Integrated Device Technology, Inc.
6.22
DSC-4217/5
1
1
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
INDEX
1
2
3
4
5
6
7
8
9
10
24
23
22
21
20
19
18
17
VCC
Y0
Y1
Y2
Y3
OE1
D0
D1
D2
D3
D4
D5
D6
D7
4 3 2
282726
1
D
D3
D4
NC
D5
D6
D7
2
5
6
7
8
9
10
11
25
Y
Y
Y
2
3
4
P24-1
D24-1
SO24-2
SO24-7
SO24-8
&
24
23
22
21
20
19
NC
Y4
Y5
Y6
Y7
Y8
L28-1
Y5
Y6
Y7
E24-1 16
1213 1415161718
D8
D9
GND
15
14
13
Y9
OE2
11
12
2573 drw 02
2573 drw 03
DIP/SOIC/SSOP/QSOP/CERPACK
TOP VIEW
LCC
TOP VIEW
FUNCTION TABLE(1)
PIN DESCRIPTION
Inputs
Output
YI
Names
I/O
Description
OEI
I
When both are LOW the outputs are
enabled. When either one or both are
HIGH the outputs are High Z.
10-bit data input.
1
2
OE
DI
Function
OE
L
L
H
L
L
L
H
X
X
L
H
Z
Z
Transparent
DI
YI
I
X
H
Three-State
O
10-bit data output.
X
2573 tbl 01
NOTE:
2573 tbl 02
1. H = HIGH, L = LOW, X = Don’t Care, Z = High Impedance
ABSOLUTE MAXIMUM RATINGS(1)
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Parameter(1)
Conditions Typ. Max. Unit
Symbol
Rating
Commercial
Military
Unit
Symbol
(2)
VTERM
Terminal Voltage
with Respect to
GND
–0.5 to +7.0 –0.5 to +7.0
V
CIN
Input
Capacitance
Output
VIN = 0V
6
8
10
pF
COUT
VOUT = 0V
12
pF
(3)
VTERM
Terminal Voltage
with Respect to
GND
–0.5 to
–0.5 to
V
Capacitance
VCC +0.5
VCC +0.5
2573 lnk 04
NOTE:
1. This parameter is measured at characterization but not tested.
TA
Operating
0 to +70
–55 to +125 °C
Temperature
Temperature
Under Bias
Storage
TBIAS
TSTG
–55 to +125 –65 to +135 °C
–55 to +125 –65 to +150 °C
Temperature
Power Dissipation
PT
0.5
0.5
W
IOUT
DC Output
Current
–60 to +120 –60 to +120 mA
2573 lnk 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
onlyandfunctionaloperationofthedeviceattheseoranyotherconditions
above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability. No terminal voltage may exceed
VCC by +0.5V unless otherwise noted.
2. Input and VCC terminals only.
3. Outputs and I/O terminals only.
6.22
2
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%
Symbol
Parameter
Input HIGH Level
Test Conditions(1)
Min. Typ.(2) Max.
Unit
VIH
Guaranteed Logic HIGH Level
2.0
—
—
—
—
—
—
—
—
—
—
—
—
0.8
±1
±1
±1
±1
±1
–1.2
—
V
VIL
II H
II L
Input LOW Level
Guaranteed Logic LOW Level
V
Input HIGH Current(4)
Input LOW Current(4)
High Impedance Output Current
(3-State Output pins)(4)
Input HIGH Current(4)
Clamp Diode Voltage
Input Hysteresis
VCC = Max.
VCC = Max.
VI = 2.7V
VI = 0.5V
VO = 2.7V
VO = 0.5V
—
µA
—
IOZH
IOZL
II
—
µA
—
VCC = Max., VI = VCC (Max.)
VCC = Min., IIN = –18mA
—
—
µA
V
VIK
VH
ICC
–0.7
200
0.01
mV
Quiescent Power Supply Current
VCC = Max., VIN = GND or VCC
1
mA
2573 lnk 05
OUTPUT DRIVE CHARACTERISTICS FOR FCT827T
Symbol
Parameter
Test Conditions(1)
Min. Typ.(2) Max.
Unit
V
OH
Output HIGH Voltage
V
V
CC = Min.
I
I
I
I
I
I
OH = –6mA MIL.
2.4
2.0
—
3.3
3.0
0.3
—
V
IN = VIH or VIL
OH = –8mA COM'L.
OH = –12mA MIL.
OH = –15mA COM'L.
OL = 32mA MIL.
—
V
V
VOL
Output LOW Voltage
Short Circuit Current
V
V
V
CC = Min.
IN = VIH or VIL
0.5
OL = 48mA COM'L.
I
OS
CC = Max., V
O
= GND(3)
–60
–120 –225
mA
2573 lnk 06
OUTPUT DRIVE CHARACTERISTICS FOR FCT2827T
Symbol
Parameter
Test Conditions(1)
Min. Typ.(2) Max.
Unit
I
I
ODL
Output LOW Current
V
CC = 5V, VIN = VIH or VIL,
CC = 5V, VIN = VIH or VIL,
V
V
OUT= 1.5V(3)
16
–16
2.4
48
–48
3.3
—
—
—
mA
ODH
Output HIGH Current
Output HIGH Voltage
V
OUT= 1.5V(3)
mA
V
V
OH
OL
V
V
V
V
CC = Min.
IN = VIH or VIL
CC = Min.
I
I
I
OH = –12mA MIL.
OH = –15mA COM'L.
OL = 12mA
V
Output LOW Voltage
—
0.3
0.50
V
IN = VIH or VIL
2573 lnk 07
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. The test limit for this parameter is ±5µA at TA = –55°C.
6.22
3
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
Symbol
Parameter
Quiescent Power Supply Current
TTL Inputs HIGH
Test Conditions(1)
Min. Typ.(2) Max.
Unit
∆ICC
VCC = Max.
VIN = 3.4V(3)
—
—
—
0.5
2.0
mA
ICCD
Dynamic Power Supply Current(4) VCC = Max.
VIN = VCC FCT827T
VIN = GND
0.15
0.06
0.25
0.12
mA/
MHz
Outputs Open
OE1 = OE2 = GND
FCT2827T
One Input Toggling
50% Duty Cycle
IC
Total Power Supply Current(6)
VCC = Max.
VIN = VCC FCT827T
VIN = GND FCT2827T
—
—
1.5
0.6
3.5
2.2
mA
Outputs Open
fi = 10MHz
50% Duty Cycle
VIN = 3.4V FCT827T
VIN = GND FCT2827T
—
—
1.8
0.9
4.5
3.2
OE1 = OE2 = GND
One Bit Toggling
VCC = Max.
VIN = VCC FCT827T
VIN = GND FCT2827T
—
—
3.0
1.2
6.0(5)
3.4(5)
Outputs Open
fi = 2.5MHz
50% Duty Cycle
VIN = 3.4V FCT827T
VIN = GND FCT2827T
—
—
5.0
3.2
14.0(5)
11.4(5)
OE1 = OE2 = GND
Eight Bits Toggling
2573 tbl 08
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5.0V, +25°C ambient.
3. Per TTL driven input (VIN = 3.4V). All other inputs at VCC or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested.
6. IC = IQUIESCENT + IINPUTS + IDYNAMIC
IC = ICC + ∆ICC DHNT + ICCD (fCP/2 + fiNi)
ICC = Quiescent Current
∆ICC = Power Supply Current for a TTL High Input (VIN = 3.4V)
DH = Duty Cycle for TTL Inputs High
NT = Number of TTL Inputs at DH
ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
fCP = Clock Frequency for Register Devices (Zero for Non-Register Devices)
fi = Input Frequency
Ni = Number of Inputs at fi
All currents are in milliamps and all frequencies are in megahertz.
6.22
4
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
FCT827AT/FCT2827AT
FCT827BT/FCT2827BT
Com'l. Mil.
Com'l.
Mil.
Symbol
tPLH
Parameter
Propagation Delay
DI to YI
Condition(1)
CL = 50pF
RL = 500Ω
CL = 300pF(3)
RL = 500Ω
CL = 50pF
RL = 500Ω
CL = 300pF(3)
RL = 500Ω
CL = 5pF(3)
RL = 500Ω
CL = 50pF
RL = 500Ω
Min.(2)
Max.
Min.(2)
Max.
Min.(2)
Max.
Min.(2)
Max.
Unit
1.5
1.5
1.5
1.5
1.5
1.5
8.0
1.5
9.0
1.5
1.5
1.5
1.5
1.5
1.5
5.0
1.5
6.5
ns
tPHL
15.0
12.0
23.0
9.0
1.5
1.5
1.5
1.5
1.5
17.0
13.0
25.0
9.0
13.0
8.0
1.5
1.5
1.5
1.5
1.5
14.0
9.0
tPZH Output Enable Time
tPZL OEI to YI
ns
15.0
6.0
16.0
7.0
tPHZ Output Disable Time
tPLZ OEI to YI
ns
10.0
10.0
7.0
8.0
2573 tbl 09
FCT827CT/FCT2827CT
Com'l. Mil.
FCT827DT
Com'l.
Mil.
Symbol
tPLH
Parameter
Propagation Delay
DI to YI
Condition(1)
CL = 50pF
RL = 500Ω
CL = 300pF(3)
RL = 500Ω
CL = 50pF
RL = 500Ω
CL = 300pF(3)
RL = 500Ω
CL = 5pF(3)
RL = 500Ω
CL = 50pF
RL = 500Ω
Min.(2)
Max.
Min.(2)
Max.
Min.(2)
Max.
Min.(2)
Max.
Unit
1.5
4.4
1.5
5.0
1.5
3.8
—
—
ns
tPHL
1.5
1.5
1.5
1.5
1.5
10.0
7.0
1.5
1.5
1.5
1.5
1.5
11.0
8.0
1.5
1.5
1.5
1.5
1.5
7.5
5.0
9.0
4.3
4.3
—
—
—
—
—
—
—
—
—
—
tPZH Output Enable Time
tPZL OEI to YI
ns
ns
14.0
5.7
15.0
6.7
tPHZ Output Disable Time
tPLZ OEI to YI
6.0
7.0
NOTES:
1. See test circuit and waveforms.
2573 tbl 10
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. These conditions are guaranteed but not tested.
6.22
5
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TEST CIRCUITS AND WAVEFORMS
TEST CIRCUITS FOR ALL OUTPUTS
SWITCH POSITION
Test
Switch
Open Drain
Disable Low
VCC
7.0V
Closed
Enable Low
500Ω
Open
All Other Tests
VOUT
VIN
2573 lnk 11
DEFINITIONS:
CL= Load capacitance: includes jig and probe capacitance.
Pulse
Generator
D.U.T.
RT = Termination resistance: should be equal to ZOUT of the Pulse
50pF
Generator.
500Ω
T
R
C
L
2573 drw 04
SET-UP, HOLD AND RELEASE TIMES
PULSE WIDTH
3V
DATA
1.5V
0V
INPUT
LOW-HIGH-LOW
t
H
t
t
SU
1.5V
PULSE
3V
1.5V
0V
TIMING
INPUT
t
W
ASYNCHRONOUS CONTROL
t
REM
PRESET
3V
1.5V
0V
CLEAR
HIGH-LOW-HIGH
PULSE
1.5V
ETC.
SYNCHRONOUS CONTROL
PRESET
2573 drw 06
3V
1.5V
0V
CLEAR
CLOCK ENABLE
ETC.
SU
t
H
2573 drw 05
PROPAGATION DELAY
ENABLE AND DISABLE TIMES
ENABLE
DISABLE
3V
1.5V
0V
3V
SAME PHASE
CONTROL
INPUT
1.5V
0V
INPUT TRANSITION
t
PLH
t
t
PHL
PHL
t
PZL
tPLZ
VOH
OUTPUT
3.5V
1.5V
3.5V
1.5V
OUTPUT
NORMALLY
LOW
SWITCH
CLOSED
VOL
t
PLH
0.3V
0.3V
VOL
3V
1.5V
0V
tPZH
tPHZ
OPPOSITE PHASE
INPUT TRANSITION
VOH
OUTPUT
NORMALLY
HIGH
SWITCH
OPEN
1.5V
0V
2573 drw 07
0V
2573 drw 08
NOTES:
1. Diagram shown for input Control Enable-LOW and input Control Disable-
HIGH
2. Pulse Generator for All Pulses: Rate ≤ 1.0MHz; tF ≤ 2.5ns; tR ≤ 2.5ns
6.22
6
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ORDERING INFORMATION
IDT
XX
FCT
X
XX
X
X
Temp. Range
Family
Device Type
Package
Process
Blank
B
Commercial
MIL-STD-883, Class B
P
Plastic DIP
D
CERDIP
E
CERPACK
L
Leadless Chip Carrier
Small Outline IC
Shrink Small Outline Package
Quarter-size Small Outline Package
SO
PY
Q
827AT
827BT
827CT
827DT
Non-Inverting 10-Bit Buffer
Blank
2
High Drive
Balanced Drive
54
74
–55°C to +125°C
0°C to +70°C
2573 drw 09
6.22
7
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