IDTHS421V16NLGI [IDT]
LOW POWER, DUAL SIM CARD HYBRID SWITCH; 低功耗，双卡混合开关
| 型号： | IDTHS421V16NLGI |
| 厂家： | 
INTEGRATED DEVICE TECHNOLOGY |
| 描述： | LOW POWER, DUAL SIM CARD HYBRID SWITCH |
| 文件： | 总12页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY DATASHEET
IDTHS421V16
LOW POWER, DUAL SIM CARD HYBRID SWITCH
Description
Features
The IDTHS421V16 is a bi-directional, low power, Quad
single-pole, double-throw (SPDT) hybrid switch targeted at
dual SIM card multiplexing. It is optimized for switching the
WLAN-SIM data and control signals and dedicates one
channel as a supply-source switch.
• Low On Capacitance for data path: 10 pF typical
• Low On Resistance for data path: 10Ω typical
• Low On Resistance for supply path: 0.4Ω typical
• Low power consumption: 1 µA maximum
– 15 µA maximum I
over expanded voltage range
This device is compatible with the requirements of SIM
CCT
(V = 1.8 V, VCC = 4.3 V)
cards and features a low on capacitance (C ) of 10 pF to
IN
ON
ensure high-speed data transfer. The V
switch path has
SIM
• Wide -3dB bandwidth: >160 MHz
a low R characteristic to insure minimal voltage drop in
ON
• Available in 16-pin QFN package – RoHS compliant
• 8 kV ESD rating, >16kV power/ground ESD rating
the dual SIM card supply paths.
The IDTHS421P16 contains special circuitry that minimizes
current consumption when the control voltage applied to the
SEL pin is lower than the supply voltage (VCC). This feature
is especially valuable in ultra-portable applications, such as
cell phones; allowing direct interface with the general
purpose I/Os of the baseband processor. Other applications
include switching and connector sharing in portable cell
phones, PDAs, digital cameras, printers, and notebook
computers.
Applications
• Cell phones, PDAs, Digital cameras, and Notebooks
• LCD monitors, TV, and Set-top boxes
Analog Symbol
1VSIM
2VSIM
1RST
2RST
1CLK
2CLK
1DAT
2DAT
VSIM
RST
CLK
DAT
Sel
IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH
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IDTHS421V16 REV B 012908
IDTHS421V16
LOW POWER, DUAL SIM CARD HYBRID SWITCH
HYBRID SWITCH
Pin Assignment (16-pin QFN)
Truth Table
Sel
Function
Logic LOW 1DAT=DAT, 1RST=RST, 1CLK=CLK, 1VSIM=VSIM
Logic HIGH 2DAT=DAT, 2RST=RST, 2CLK=CLK, 2VSIM=VSIM
1VSIM
DAT
2DAT
NC
1
4
Sel
2RST
RST
1CLK
16-pin QFN
Pin Descriptions
Pin Name
Pin Description
nDAT, nRST, nCLK
Multiplexed data source inputs.
Multiplexed SIM supply inputs.
Common SIM ports.
nV
SIM
V
, DAT, RST, CLK
Sel
SIM
Switch select.
IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH
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IDTHS421V16 REV B 012908
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LOW POWER, DUAL SIM CARD HYBRID SWITCH
HYBRID SWITCH
Absolute Maximum Ratings
Stresses above the ratings listed below can cause permanent damage to the IDTHS421P16. These ratings, which
are standard values for IDT commercially rated parts, are stress ratings only. Functional operation of the device at
these or any other conditions above those indicated in the operational sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods can affect product reliability. Electrical
parameters are guaranteed only over the recommended operating temperature range.
Symbol
Parameter
Min.
-0.5
-0.5
-0.5
-50
Max.
+5.5
Units
V
VCC
Supply Voltage
V
DC Input Voltage, Sel (note 1)
DC Switch I/O Voltage (note 1)
DC Input Diode Current
VCC
V
CNTRL
V
VCC+0.3
V
SW
I
mA
mA
mA
°C
IK
I
DC Output Current, V
350
35
+150
8
SIM
SIM
I
DC Output Current, DAT, CLK, RST
Storage Temperature
OUT
T
-65
STG
All pins
Human Body Model, JEDEC: JESD22-A114
Charged Device Model, JEDEC: JESD22-C101
ESD
I/O to GND
8
kV
2
Note 1 : The input and output negative ratings may be exceeded if the input and output diode current ratings are
observed.
Recommended Operation Conditions
Symbol
Parameter
Min.
2.7
0
Max.
4.3
Units
V
VCC
Supply Voltage
V
Control Input Voltage, Sel (note 2)
Switch I/O Voltage
VCC
VCC
150
25
V
CNTRL
V
-0.5
V
SW
SIM
I
DC Output Current, V
mA
mA
°C
SIM
I
DC Output Current, DAT, CLK, RST
Operating Temperature
OUT
T
-40
+85
A
Note 2 : The control pin must be held HIGH or LOW; it must not float.
Thermal Characteristics
Parameter
Symbol
Conditions
Min.
Typ. Max. Units
Thermal Resistance Junction to
Ambient
θ
Still air
69.4
60.7
54.4
9.7
° C/W
° C/W
° C/W
° C/W
JA
θ
1 m/s air flow
JA
θ
2.5 m/s air flow
JA
Thermal Resistance Junction to Case
θ
JC
IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH
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LOW POWER, DUAL SIM CARD HYBRID SWITCH
HYBRID SWITCH
DC Electrical Characteristics
Unless stated otherwise, VCC = 3.3 V @ 25°C
TA = -40°C to +85°C
Parameter
Symbol
Conditions
VCC (V)
Units
Min. Typ. Max.
Clamp Diode Voltage
Input Voltage High
VIK
VIH
IIN = 18 mA
2.7
2.7 to 3.6
4.3
-1.2
V
V
1.3
1.7
0.5
0.7
2.7 to 3.6
4.3
Input Voltage Low
VIL
IIN
V
Control Input Leakage
OFF State Leakage
VSW = 0 to VCC
4.3
-1
1
µA
nA
Inc(OFF)
Ino(OFF)
,
nRST, nDAT, nCLK, nVSIM = 0.3 V or 3.6 V
(Fig. 2)
4.3
-60
60
Data Path Switch On
Resistance (note 3)
ROND
VSW = 0, 2.3 V, ION = -20 mA (Fig. 1)
2.7
2.7
2.7
6.0
0.4
10.0
0.6
Ω
Ω
Ω
VSIM Switch On Resistance
(note 3)
RONV
VSW = 0, 2.3 V, ION = -100 mA (Fig. 1)
Data Path Delta On
Resistance (note 4)
ROND VSW = 0V, ION = -20 mA
0.65
Quiescent Supply Current
ICC
VCNTRL = 0 or VCC, IOUT = 0
VCNTRL = 2.6 V, VCC = 4.3 V
4.3
4.3
4.3
1.0
µA
µA
Increase in ICC Current per
Control Voltage and VCC
10.0
15.0
ICCT
VCNTRL = 1.8 V, VCC = 4.3 V
Notes:
3. Measured by the voltage drop between nDAT, nRST, nCLK and relative common port pins at the indicated current
through the switch. On resistance is determined by the lower of the voltage on the relative ports.
4. Guaranteed by characterization.
IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH
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LOW POWER, DUAL SIM CARD HYBRID SWITCH
HYBRID SWITCH
AC Electrical Characteristics
Unless stated otherwise, VCC = 3.3 V @ 25°C
TA = -40°C to +85°C
Parameter
Symbol
Conditions
VCC (V)
Units
Min. Typ. Max.
Turn-on Time Sel to
Output (DAT, CLK, RST)
tOND
RL = 50Ω, CL = 35 pF, VSW = 1.5 V (Fig. 3, Fig. 4) 2.7 to 3.6
RL = 50Ω, CL = 35 pF, VSW = 1.5 V (Fig. 3, Fig. 4) 2.7 to 3.6
RL = 50Ω, CL = 35 pF, VSW = 1.5 V (Fig. 3, Fig. 4) 2.7 to 3.6
RL = 50Ω, CL = 35 pF, VSW = 1.5 V (Fig. 3, Fig. 4) 2.7 to 3.6
60
ns
Turn-off Time Sel to
Output (DAT, CLK, RST)
tOFFD
tONV
tOFFV
tPD
40
ns
ns
ns
ns
ns
ns
pC
dB
dB
Turn-on Time Sel to
50
Output (VSIM
Turn-off Time Sel to
Output (VSIM
)
40
)
Propagation Delay (DAT,
CLK, RST)
RL = 50Ω, CL = 35 pF, (Fig. 3, Fig. 5), Note 5
3.3
0.25
Break-Before-Make
tBBMV
tBBMD
Q
RL = 50Ω, CL = 35 pF, VSW1 = VSW2 = 1.5 V (Fig. 2.7 to 3.6
7), Note 5
3
3
12
18
(VSIM
)
Break-Before-Make
(DAT, CLK, RST)
RL = 50Ω, CL = 35 pF, VSW1 = VSW2 = 1.5 V (Fig. 2.7 to 3.6
7), Note 5
Charge Injection (DAT,
CLK, RST)
R
GEN = 0Ω, CL = 50 pF, VGEN = 0V
2.7 to 3.6
2.7 to 3.6
2.7 to 3.6
10
Off Isolation (DAT, CLK,
RST)
OIRR
Xtalk
RL = 50Ω, f = 10 MHz (Fig. 9)
RL = 50Ω, f = 10 MHz (Fig. 10)
-80
-80
Non-Adjacent Channel
Crosstalk (DAT, CLK,
RST)
-3 dB Bandwidth (DAT,
CLK, RST)
BW
RL = 50Ω, CL = 5 pF (Fig. 8)
2.7 to 3.6
>160
MHz
Note:
5. Guaranteed by characterization.
Capacitance
TA = -40°C to +85°C
Min. Typ. Max.
1.5
Parameter
Symbol
Conditions
Units
Control Pin Input Capacitance
RST, CLK, DAT On Capacitance
VSIM On Capacitance
CIN
VCC = 0V
COND
CONV
COFFD
COFFV
VCC = 3.3 V, f = 1 MHz (Fig. 12)
VCC = 3.3 V, f = 1 MHz (Fig. 12)
VCC = 3.3 V(Fig. 11)
10
130
3
12
150
pF
RST, CLK, DAT Off Capacitance
VSIM Off Capacitance
VCC = 3.3 V(Fig. 11)
40
IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH
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IDTHS421V16
LOW POWER, DUAL SIM CARD HYBRID SWITCH
HYBRID SWITCH
Test Diagrams
VON
tRISE = 2.5 ns
tFALL = 2.5 ns
nVSIM, nRST,
nCLK, or nDAT
VCC
Input - VSEL
VOUT, RST,
CLK, or DAT
90%
VCC /2
90%
VSW
VCC /2
ION
10%
10%
GND
VOH
GND
VSEL = 0 or VCC
90%
90%
Output - VOUT
VOL
RON = VON / ION
Figure 1: On Resistance
tON
tOFF
Figure 4: Turn-On/Turn-Off Waveforms
InA(OFF)
A
NC
VSW
tRISE = 2.5 ns
tFALL = 2.5 ns
GND
VCC
Input - VSW
10%
VSEL = 0 or VCC
90%
CC /2
90%
V
VCC /2
10%
Figure 2: Off Leakage
GND
VOH
nVSIM, nRST,
nCLK, or nDAT
V
SIM, RST,
50%
Output - VOUT
VOL
50%
CLK, or DAT
VSW
CL
RL
VOUT
tpLH
tpHL
GND
Sel
Figure 5: Propagation Delay
GND
RL and CL are functions of the application
environment (see tables for specific values).
CL includes test fixture and stray capacitance.
Figure 3: AC Test Circuit Load
IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH
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LOW POWER, DUAL SIM CARD HYBRID SWITCH
HYBRID SWITCH
nVSIM, nRST,
nCLK, or nDAT
V
SIM, RST,
Network Analyzer
RS
CLK, or DAT
VSW
VIN
CL
RL
VOUT
VS
GND
GND
GND
Sel
VSEL
VOUT
GND
GND
RT
GND
VCC
RS and RT are functions of the application
environment (see tables for specific values).
Off
On
Off
Logic Input
0V
Figure 8: Bandwidth
VOUT
VOUT
Network Analyzer
RS
Q = VOUT x CL
Figure 6: Charge Injection
VIN
VS
RT
GND
VSEL
GND
nVSIM, nRST,
nCLK, or nDAT
VOUT
VSIM, RST,
CLK, or DAT
GND
RT
GND
GND
VSW1
RS and RT are functions of the application
environment (see tables for specific values).
CL
RL
VOUT
VSW2
GND
GND
Off isolation = 20 Log (VOUT / VIN)
Figure 9: Channel Off Isolation
GND
Sel
tRISE = 2.5 ns
Network Analyzer
RS
VCC
Input - VSel
10%
NC
90%
VCC /2
VIN
VS
0V
VOUT
0.9 x VOUT
GND
GND
VSEL
GND
RT
GND
0.9 x VOUT
tBBM
VOUT
RL and CL are functions of the application
environment (see tables for specific values).
CL includes test fixture and stray capacitance.
RT
GND
RS and RT are functions of the application
environment (see tables for specific values).
Figure 7: Break-Before-Make Interval Timing
Crosstalk = 20 Log (VOUT / VIN)
Figure 10: Non-Adjacent Channel-to-channel Crosstalk
IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH
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IDTHS421V16 REV B 012908
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LOW POWER, DUAL SIM CARD HYBRID SWITCH
HYBRID SWITCH
nVSIM, nRST,
nCLK, or nDAT
Capacitance
VSEL = 0 or VCC
Meter
f = 1 MHz
nVSIM, nRST,
nCLK, or nDAT
Figure 11: Channel Off Capacitance
VSIM, RST,
CLK, or DAT
Capacitance
Meter
VSEL = 0 or VCC
f = 1 MHz
nVSIM, nRST,
nCLK, or nDAT
Figure 12: Channel On Capacitance
IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH
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IDTHS421V16 REV B 012908
IDTHS421V16
LOW POWER, DUAL SIM CARD HYBRID SWITCH
HYBRID SWITCH
Marking Diagram (QFN)
TBD
Notes:
1. “Z” is the device step (1 to 2 characters).
2. YYWW is the last two digits of the year and week that the part was assembled.
3. “$” is the assembly mark code.
4. “G” after the two-letter package code designates RoHS compliant package.
5. “I” at the end of part number indicates industrial temperature range.
6. Bottom marking: country of origin if not USA.
IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH
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IDTHS421V16 REV B 012908
IDTHS421V16
LOW POWER, DUAL SIM CARD HYBRID SWITCH
HYBRID SWITCH
Package Outline and Package Dimensions (16-pin 3x3mm QFN)
Package dimensions are kept current with JEDEC Publication No. 95
(Ref)
ND & NE
Even
Seating Plane
(ND-1)x
(Ref)
e
A1
Index Area
(Typ)
If ND & NE
are Even
L
A3
e
2
N
1
2
N
1
2
(NE-1)x
(Ref)
e
Sawn
Singulation
E2
E
E2
2
Top View
b
A
C
(Ref)
ND & NE
Odd
e
Thermal Base
D
D2
2
C
D2
0.08
Millimeters
Symbol
Min
0.80
0
0.25 Reference
0.18
Max
1.00
0.05
A
A1
A3
b
0.30
e
0.50 BASIC
N
16
N
N
4
4
D
E
D x E BASIC
3.00 x 3.00
D2
E2
L
1.55
1.55
0.30
1.80
1.80
0.50
Ordering Information
Part / Order Number
IDTHS421V16NLGI
IDTHS421V16NLGI8
Marking
Shipping Packaging
Tubes
Package
16-pin QFN
16-pin QFN
Temperature
-40 to +85°C
-40 to +85°C
TBD
Tape and Reel
Parts that are ordered with a “G” after the two-letter package code are the Pb-Free configuration and are RoHS compliant.
While the information presented herein has been checked for both accuracy and reliability, Integrated Device Technology (IDT) assumes
no responsibility for either its use or for the infringement of any patents or other rights of third parties, which would result from its use. No
other circuits, patents, or licenses are implied. This product is intended for use in normal commercial applications. Any other applications
such as those requiring extended temperature range, high reliability, or other extraordinary environmental requirements are not
recommended without additional processing by IDT. IDT reserves the right to change any circuitry or specifications without notice. IDT
does not authorize or warrant any IDT product for use in life support devices or critical medical instruments.
IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH
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IDTHS421V16 REV B 012908
IDTHS421V16
LOW POWER, DUAL SIM CARD HYBRID SWITCH
HYBRID SWITCH
Revision History
Rev. Originator
Date
Description of Change
A
B
JS
JS
01/15/08 Preliminary datasheet. Initial release.
02/12/08 Change the part number to IDTHS421V16.
IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH
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IDTHS421V16 REV B 012908
IDTHS421V16
LOW POWER, DUAL SIM CARD HYBRID SWITCH
HYBRID SWITCH
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© 2006 Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice. IDT and the IDT logo are trademarks of Integrated Device
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trademarks used to identify products or services of their respective owners.
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