IDTQS74FCT2827AT [IDT]
HIGH-SPEED CMOS BUS INTERFACE 10-BIT BUFFER; 高速CMOS总线接口的10位缓冲器
| 型号： | IDTQS74FCT2827AT |
| 厂家： | 
INTEGRATED DEVICE TECHNOLOGY |
| 描述： | HIGH-SPEED CMOS BUS INTERFACE 10-BIT BUFFER |
| 文件： | 总6页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HIGH-SPEED CMOS
IDTQS74FCT2827AT/BT/CT
BUS INTERFACE
10-BIT BUFFER
DESCRIPTION:
FEATURES:
The IDTQS74FCT2827T is a 10-bit buffer with 3-state outputs and a
• CMOS power levels: <7.5mW static
• Undershoot clamp diodes on all outputs
• True TTL input and output compatibility
• Ground bounce controlled outputs
• Reduced output swing of 0 to 3.5V
• Built-in 25Ω series resistor outputs reduce reflection and other
system noise
25Ω resistor, useful for driving transmission lines and reducing system
noise. The2827Tseriespartscanreplacethe827Tseriestoreducenoise
in an existing design. All inputs have clamp diodes for undershoot noise
suppression. Alloutputshavegroundbouncesuppression. Outputswillnot
load an active bus when Vcc is removed from the device.
• A,B, and C speed grades with 4.4ns tPD for C
• IOL = 12mA
• Available in SOIC and QSOP packages
FUNCTIONALBLOCKDIAGRAM
Yx
Dx
25Ω
OE1
OE2
INDUSTRIAL TEMPERATURE RANGE
MARCH 2002
1
c
2002 Integrated Device Technology, Inc.
DSC-5258/4
IDTQS74FCT2827AT/BT/CT
HIGH-SPEEDCMOSBUSINTERFACE10-BITBUFFER
INDUSTRIALTEMPERATURERANGE
ABSOLUTEMAXIMUMRATINGS(1)
PINCONFIGURATION
Symbol
VTERM
TSTG
IOUT
Description
Max
–0.5 to +7
–65 to +150
120
Unit
V
Terminal Voltage with Respect to GND
Storage Temperature
24
23
22
21
20
19
18
17
16
15
14
13
1
2
3
4
VCC
Y0
OE1
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
°C
mA
mA
mA
DC Output Current Max Sink Current/Pin
Input Diode Current, VIN < 0
IIK
–20
Y1
IOK
Output Diode Current, VOUT < 0
–50
NOTE:
Y2
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
5
Y3
6
Y4
7
Y5
8
Y6
CAPACITANCE (TA = +25°C, F = 1.0MHz)
9
Y7
Symbol
Parameter(1)
Input Capacitance
Output Capacitance
Conditions
Typ.
Max. Unit
CIN
VIN = 0V
8
8
—
—
pF
pF
10
11
12
Y8
COUT
VOUT = 0V
Y9
NOTE:
1. This parameter is measured at characterization but not tested.
OE2
GND
SOIC/ QSOP
TOP VIEW
PINDESCRIPTION
Pin Names
I/O
Description
OEx
I
WhenbothareLOW,theoutputsareenabled.
WheneitheroneorbothareHIGH,theoutputs
are HIGH Z.
Dx
I
10-BitDataInputs
10-BitDataOutputs
Yx
O
FUNCTIONTABLE(1)
Inputs
Outputs
OE1
L
OE2
L
Dx
L
Yx
L
Function
Transparent
Transparent
High-Z
L
L
H
X
H
Z
H
X
X
H
X
Z
High-Z
NOTE:
1. H = HIGH
L = LOW
X = Don't Care
Z = High-Impedance
2
IDTQS74FCT2827ATBT//CT
HIGH-SPEEDCMOSBUSINTERFACE10-BITBUFFER
INDUSTRIALTEMPERATURERANGE
DCELECTRICALCHARACTERISTICSOVEROPERATINGRANGE
FollowingConditionsApplyUnlessOtherwiseSpecified:
Industrial: TA = –40°C to +85°C, VCC = 5.0V ± 5%
Symbol
VIH
Parameter
Input HIGH Level
Test Conditions
Guaranteed Logic HIGH Level
Min.
2
Typ.(1)
—
Max.
—
Unit
V
VIL
Input LOW Level
Guaranteed Logic LOW Level
VTLH - VTHL for all inputs
VCC = Max.
—
—
0.8
—
V
∆VT
IIH
Input Hysteresis
—
0.2
V
Input HIGH Current
Input LOW Current
Off-State Output Current (Hi-Z)
Current Drive
0 ≤ VIN ≤ VCC
0 ≤ VIN ≤ VCC
—
—
±5
µA
IIL
IOZ
IOR
VIC
VCC = Max
—
50
—
2.4
—
18
—
—
±5
—
µA
mA
V
VCC = Max., VOUT = 2.0V(2)
VCC = Min, IIN = -18mA , TA = 25°C(2)
VCC = Min.
Input Clamp Voltage
Output HIGH Voltage
OutputLOWVoltage
OutputResistance
–0.7
—
–1.2
—
VOH
VOL
IOH = -15mA
IOL = 12mA
IOH = 12mA
V
VCC = Min.
—
0.5
40
V
(3)
ROUT
VCC = Min.
25
Ω
NOTES:
1. Typical values are at VCC = 5.0V, TA = 25°C.
2. This parameter is measured at characterization but not tested.
3. ROUT changed on March 8, 2002. See rear page for more information.
POWERSUPPLYCHARACTERISTICS
FollowingConditionsApplyUnlessOtherwiseSpecified:
Industrial: TA = –40°C to +85°C, VCC = 5.0V ± 5%
Symbol
Parameter
TestConditions(1)
Min.
Max.
Unit
ICC
Quiescent Power Supply Current
VCC = Max.
—
1.5
mA
freq = 0
0V ≤ VIN ≤ 0.2V or
VCC - 0.2V ≤ VIN ≤ Vcc
VCC = Max.
∆ICC
Supply Current per Input TTL Inputs HIGH
Supply Current per Input per MHz
—
—
2
mA
VIN = 3.4V(2)
freq = 0
ICCD
VCC = Max.
0.25
mA/MHz
OutputsOpenandEnabled
OneBitToggling
50% Duty Cycle
Other inputs at GND or Vcc(3,4)
NOTES:
1. For conditions shown as Min. or Max., use the appropriate values specified under DC Electrical Characteristics.
2. Per TLL driven input (VIN = 3.4V).
3. For flip-flops, ICCD is measured by switching one of the data input pins so that the output changes every clock cycle. This is a measurement of device power consumption
only and does not include power to drive load capacitance or tester capacitance.
4. IC = IQUIESCENT + IINPUTS + IDYNAMIC
IC = ICC + ∆ICC DHNT + ICCD (fCP/2 + fiNi)
ICC = Quiescent Current
∆ICC = Power Supply Current for a TTL High Input (VIN = 3.4V)
DH = Duty Cycle for TTL Inputs High
NT = Number of TTL Inputs at DH
ICCD = Dynamic Current Caused by an Output Transition Pair (HLH or LHL)
fCP = Clock Frequency for Register Devices (Zero for Non-Register Devices)
fi = Input Frequency
Ni = Number of Inputs at fi
All currents are in milliamps and all frequencies are in megahertz.
3
IDTQS74FCT2827AT/BT/CT
HIGH-SPEEDCMOSBUSINTERFACE10-BITBUFFER
INDUSTRIALTEMPERATURERANGE
SWITCHINGCHARACTERISTICSOVEROPERATINGRANGE(1)
FCT2827AT
FCT2827BT
FCT2827CT
Symbol
tPLH
Parameter(2)
Min.
Max.
Min.
Max.
Min.
Max.
Unit
PropagationDelay
Dx to Yx
PropagationDelay
Dx to Yx(2,3)
—
—
—
—
—
—
8
—
—
—
—
—
—
5
—
—
—
—
—
—
4.4
ns
tPHL
tPLH
17
12
23
9
—
8
—
7
ns
ns
ns
ns
ns
tPHL
tPZH
tPZL
OutputEnableTime
OEx to Yx
OutputEnableTime
OEx to Yx(2,3)
OutputDisableTime
OEx to Yx(2,4)
OutputDisableTime
OEx to Yx(2)
tPZH
tPZL
—
6
—
5.7
6
tPHZ
tPLZ
tPHZ
tPLZ
10
7
NOTES:
1. CLOAD = 50pF, RLOAD = 500Ω unless otherwise noted.
2. This parameter is guaranteed by design but not tested.
3. CLOAD = 300pF.
4. CLOAD = 5pF.
4
IDTQS74FCT2827ATBT//CT
HIGH-SPEEDCMOSBUSINTERFACE10-BITBUFFER
INDUSTRIALTEMPERATURERANGE
TESTCIRCUITSANDWAVEFORMS
VCC
7.0V
SWITCHPOSITION
500W
Test
Switch
Closed
Open
VOUT
VIN
Pulse
Generator
Open Drain
Disable Low
Enable Low
D.U.T.
50pF
500W
RT
All Other Tests
CL
DEFINITIONS:
CL = Load capacitance: includes jig and probe capacitance.
FCTL link
RT = Termination resistance: should be equal to ZOUT of the Pulse Generator.
Test Circuits for All Outputs
3V
DATA
1.5V
0V
INPUT
LOW-HIGH-LOW
PULSE
tH
tSU
1.5V
1.5V
3V
1.5V
0V
TIMING
INPUT
tW
ASYNCHRONOUS CONTROL
tREM
PRESET
3V
1.5V
0V
CLEAR
HIGH-LOW-HIGH
PULSE
ETC.
SYNCHRONOUS CONTROL
PRESET
3V
FCTL link
1.5V
0V
CLEAR
tSU
tH
CLOCK ENABLE
ETC.
Pulse Width
FCTL link
Set-Up, Hold, and Release Times
ENABLE
DISABLE
3V
1.5V
0V
3V
SAME PHASE
CONTROL
INPUT
1.5V
0V
INPUT TRANSITION
tPLH
tPLH
tPHL
tPHL
tPZL
tPLZ
VOH
1.5V
VOL
OUTPUT
3.5V
1.5V
3.5V
VOL
VOH
OUTPUT
NORMALLY
LOW
SWITCH
CLOSED
0.3V
0.3V
3V
1.5V
0V
tPZH
tPHZ
OPPOSITE PHASE
INPUT TRANSITION
OUTPUT
NORMALLY
HIGH
SWITCH
OPEN
1.5V
0V
FCTL link
0V
FCTL link
Propagation Delay
Enable and Disable Times
NOTES:
1. Diagram shown for input Control Enable-LOW and input Control Disable-HIGH.
2. Pulse Generator for All Pulses: Rate ≤ 1.0MHz; tF ≤ 2.5ns; tR ≤ 2.5ns.
5
IDTQS74FCT2827AT/BT/CT
HIGH-SPEEDCMOSBUSINTERFACE10-BITBUFFER
INDUSTRIALTEMPERATURERANGE
ORDERINGINFORMATION
XX
XXXX
XX
IDTQS
FCT
Device Type Package
Temp. Range
SO
Q
Small Outline IC (gull wing)
Quarter Size Small Outline Package
High-Speed CMOS Bus Interface 10-Bit Buffer
2827AT
2827BT
2827CT
–40°C to +85°C
74
As per PCN L0201-02, the Output Resistance (ROUT) specifications have changed as of March 8, 2002. The original specifications were:
Parameter
Description
Min.
Typ.
Max. Unit
40
ROUT
VCC = Min, IOL = -15mA
20
28
Ω
CORPORATE HEADQUARTERS
2975StenderWay
Santa Clara, CA 95054
for SALES:
for Tech Support:
logichelp@idt.com
(408) 654-6459
800-345-7015 or 408-727-6116
fax: 408-492-8674
www.idt.com
6
相关型号：
IDTQS74FCT2828ATQ8
Bus Driver, FCT Series, 1-Func, 10-Bit, Inverted Output, CMOS, PDSO24, QSOP-24
IDT
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