IN74HCT245ADW
更新时间：2024-09-18 07:29:29
品牌：IKSEMICON
描述：Octal 3-State Noninverting Bus Transceiver High-Performance Silicon-Gate CMOS
概述
数据手册IN74HCT245ADW 概述
Octal 3-State Noninverting Bus Transceiver High-Performance Silicon-Gate CMOS 八路三态同相总线收发器的高性能硅栅CMOS
IN74HCT245ADW 数据手册
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PDF下载TECHNICAL DATA
IN74HCT245A
Octal 3-State Noninverting
Bus Transceiver
High-Performance Silicon-Gate CMOS
The IN74HCT245A is identical in pinout to the LS/ALS245.This
device may be used as a level converter for interfacing TTL or NMOS
outputs to High Speed CMOS inputs.
The IN74HCT245A is a 3-state noninverting transceiver that is used
for 2-way asynchronous communication between data buses. The device
has an active-low Output Enable pin, which is used to place the I/O ports
into high-impedance states. The Direction control determines whether
data flows from A to B or from B to A.
ORDERING INFORMATION
IN74HCT245AN Plastic
IN74HCT245ADW SOIC
IN74HCT245ATDS SOIC
TA = -55° to 125° C for all packages
•
•
•
•
TTL/NMOS Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 1.0 μA
PIN ASSIGNMENT
LOGIC DIAGRAM
FUNCTION TABLE
Control Inputs
PIN 20=VCC
Output
Enable
Direction
Operation
PIN 10 = GND
L
L
H
L
Data Transmitted
from Bus B to
Bus A
H
X
Data Transmitted
from Bus A to
Bus B
Buses Isolated
(High Impedance
State)
X = don’t care
Rev. 00
IN74HCT245A
MAXIMUM RATINGS*
Symbol
Parameter
Value
-0.5 to +7.0
-1.5 to VCC +1.5
-0.5 to VCC +0.5
±20
Unit
V
VCC
VIN
VOUT
IIN
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
V
V
mA
mA
mA
mW
IOUT
ICC
DC Output Current, per Pin
±35
DC Supply Current, VCC and GND Pins
±75
PD
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
Tstg
TL
Storage Temperature
-65 to +150
260
°C
°C
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Parameter
Min
4.5
0
Max
5.5
Unit
V
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Input Rise and Fall Time (Figure 1)
VIN, VOUT
TA
VCC
+125
500
V
-55
0
°C
ns
tr, tf
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or
V
OUT)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused
outputs must be left open.
Rev. 00
IN74HCT245A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
VCC
V
Guaranteed Limit
Symbol
Parameter
Test Conditions
Unit
25 °C
to
≤85 ≤125
°C
°C
-55°C
VIH
VIL
Minimum High-
Level Input Voltage
VOUT=0.1 V or VCC-0.1 V
⎢IOUT⎢≤ 20 μA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
V
V
Maximum Low -
Level Input Voltage
VOUT=0.1 V or VCC-0.1 V
⎢IOUT⎢ ≤ 20 μA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
VOH
Minimum High-
Level Output Voltage
VIN=VIH or VIL
⎢IOUT⎢ ≤ 20 μA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
VIN=VIH or VIL
4.5
3.98
3.84
3.7
⎢IOUT⎢ ≤ 6.0 mA
VOL
Maximum Low-
Level Output Voltage
VIN= VIL or VIH
⎢IOUT⎢ ≤ 20 μA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
V
VIN= VIL or VIH
4.5
5.5
0.26
0.33
0.4
⎢IOUT⎢ ≤ 6.0 mA
IIN
Maximum Input
Leakage Current
VIN=VCC or GND,
Pin 1 or 19
±0.1
±1.0 ±1.0
μA
μA
IOZ
Maximum Three-
State Leakage
Current
Output in High-Impedance
State
VIN= VIL or VIH
VOUT=VCC or GND,
I/O Pins
5.5
±0.5
±5.0
±10
ICC
Maximum Quiescent
Supply Current
(per Package)
VIN=VCC or GND
5.5
4.0
40
160
μA
I
OUT=0μA
Additional Quiescent VIN=2.4 V, Any One Input
mA
ΔICC
≥-55°C
2.9
25°C to
125°C
Supply Current
VIN=VCC or GND, Other
Inputs
5.5
2.4
IOUT=0μA
Rev. 00
IN74HCT245A
AC ELECTRICAL CHARACTERISTICS (VCC =5.0 V ± 10%, CL=50pF,Input tr=tf=6.0 ns)
Guaranteed Limit
≤85°C ≤125°C
Symbol
Parameter
Unit
25 °C
to
-55°C
tPLH, tPHL Maximum Propagation Delay, A to B or B to A
(Figures 1 and 3)
22
32
30
12
28
40
38
15
33
48
45
18
ns
ns
ns
ns
tPLZ, tPHZ Maximum Propagation Delay , Direction or
Output Enable to A or B (Figures 2 and 4)
tPZL, tPZH Maximum Propagation Delay , Direction or
Output Enable to A or B (Figures 2 and 4)
tTLH, tTHL Maximum Output Transition Time, Any Output
(Figures 1 and 3)
CIN
Maximum Input Capacitance (Pin 1 or Pin 19)
10
15
10
15
10
15
pF
pF
COUT
Maximum Three-State I/O Capacitance
(I/O in High-Impedance State)
Power Dissipation Capacitance (Per Enable
Output)
Typical @25°C,VCC=5.0 V
CPD
Used to determine the no-load dynamic power
consumption:
97
pF
PD=CPDVCC2f+ICCVCC
Figure 1. Switching Waveforms
Figure 2. Switching Waveforms
Rev. 00
IN74HCT245A
Figure 3. Test Circuit
Figure 4. Test Circuit
EXPANDED LOGIC DIAGRAM
Rev. 00
IN74HCT245A
N SUFFIX PLASTIC DIP
(MS - 001AD)
A
Dimension, mm
11
10
20
1
Symbol MIN
MAX
26.92
7.11
B
24.89
6.1
A
B
C
D
F
5.33
0.36
1.14
0.56
F
L
1.78
2.54
7.62
G
H
J
C
SEATING
PLANE
-T-
K
N
0
10
°
°
M
J
G
H
D
2.92
7.62
0.2
3.81
8.26
0.36
K
L
M
N
0.25 (0.010) M
T
NOTES:
1. Dimensions “A”, “B” do not include mold flash or protrusions.
Maximum mold flash or protrusions 0.25 mm (0.010) per side.
0.38
D SUFFIX SOIC
(MS - 013AC)
A
20
11
Dimension, mm
Symbol MIN
MAX
13
H
B
P
12.6
7.4
A
B
C
D
F
7.6
2.35
0.33
0.4
2.65
0.51
1.27
1
10
G
R x 45
C
-T-
SEATING
PLANE
1.27
9.53
G
H
J
K
M
D
J
F
M
0.25 (0.010) M T C
0
°
8
°
NOTES:
0.1
0.23
10
0.3
0.32
10.65
0.75
K
M
P
1. Dimensions A and B do not include mold flash or protrusion.
2. Maximum mold flash or protrusion 0.15 mm (0.006) per side
for A; for B 0.25 mm (0.010) per side.
‑
0.25
R
Rev. 00
IN74HCT245A
TSSOP-20
Rev. 00
IN74HCT245ADW 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| IN74HCT245AN | IKSEMICON | Octal 3-State Noninverting Bus Transceiver High-Performance Silicon-Gate CMOS | 获取价格 |
|
| IN74HCT245ATDS | IKSEMICON | Octal 3-State Noninverting Bus Transceiver High-Performance Silicon-Gate CMOS | 获取价格 |
|
| IN74HCT273A | IKSEMICON | Octal D Flip-Flop with Common Clock and Reset High-Performance Silicon-Gate CMOS | 获取价格 |
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| IN74HCT273ADW | IKSEMICON | Octal D Flip-Flop with Common Clock and Reset High-Performance Silicon-Gate CMOS | 获取价格 |
|
| IN74HCT273AN | IKSEMICON | Octal D Flip-Flop with Common Clock and Reset High-Performance Silicon-Gate CMOS | 获取价格 |
|
| IN74HCT27A | INTEGRAL | Triple 3-Input NOR Gate | 获取价格 |
|
| IN74HCT27AD | INTEGRAL | Triple 3-Input NOR Gate | 获取价格 |
|
| IN74HCT27AN | INTEGRAL | Triple 3-Input NOR Gate | 获取价格 |
|
| IN74HCT30A | INTEGRAL | 8-Input NAND Gate | 获取价格 |
|
| IN74HCT30AD | INTEGRAL | 8-Input NAND Gate | 获取价格 |
|
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