I603-1FB5H2-20.000 [ILSI]
3.2 mm x 5.0 mm Ceramic Package SMD VCXO, TTL / HC-MOS; 3.2毫米X 5.0毫米陶瓷封装SMD VCXO ， TTL / HC -MOS
| 型号： | I603-1FB5H2-20.000 |
| 厂家： | 
ILSI |
| 描述： | 3.2 mm x 5.0 mm Ceramic Package SMD VCXO, TTL / HC-MOS |
| 文件： | 总2页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
3.2 mm x 5.0 mm Ceramic Package SMD VCXO, TTL / HC-MOS
I603 Series
Product Features:
Small Surface Mount Package
CMOS/TTL Compatible Logic Levels
Compatible with Leadfree Processing
Applications:
SD/HD Video
Sonet /SDH
VoIP
T1/E1, T3/E3
Wireless Base Station
Frequency
1.000 MHz to 77.760 MHz (Fund.)
Output Level (HCMOS)
VOH = 90% VDD Min.
VOL = 10% VDD Max.
Duty Cycle
50% ±10% Std.(5% optional)
Rise / Fall Time
1.0 MHz to 20.0 MHz : 10.0 nS Max.
20.1 MHz to 40.0 MHz : 8.0 nS Max.
40.0 MHz to 77.76 MHz : 5.0 nS Max.
Output Load
15pF
Frequency Stability
Start-up Time
See Table Below
10 mS Max.
Supply Voltage
Control Voltage
See Input Voltage Table, tolerance ±5 %
Recommended Pad Layout
1.25 VDC ±1.05 VDC for 2.5 VDC, 1.65 VDC ±1.35 VDC for
3.3 VDC, 2.5 VDC ±2.0 VDC for 5.0 VDC
Pull Range
Current
±100 ppm min. (Std). See Table Below.
1.0 MHz to 20.0 MHz : 10.0 mA Max.
20.1 MHz to 40.0 MHz : 15.0 mA Max.(2.5V/3.3V)
20.1 MHz to 40.0 MHz : 20.0 mA Max.(5.0V)
40.0 MHz to 77.76 MHz : 25.0 mA Max.(2.5V/3.3V)
40.0 MHz to 77.76 MHz : 30.0 mA Max.(5.0V)
Enable/Disable(Pin 2 or Pin 5)
70% VDD Min. / 30%VDD Max.
10%
Pin Connection
Linearity
Aging
1
2
3
4
5
6
V Control
E/D(N.C.)
GND
Output
N.C.(E/D)
VDD
±5ppm/year Max. (±3ppm optional)
Phase Jitter (12kHz to 20kHz)
Period Jitter (PK-PK)
1.0 pS Max.
100pS Max.
Temperature
Operating
Storage
Dimension Units: mm
See Below
-55 C to +125 C
Part Number Guide
Sample Part Number: I603-1BC3H2-20.000
Package
Operating
Stability
(in ppm)
F = 20
Pullability
Supply
Voltage
Enable / Disable
Frequency
- 20.000 MHz
Temperature
1 = 0 C to +70 C
2 = -40 C to +85 C
5 = 5.0 VDC
3 = 3.3 VDC
6 = 2.5 VDC
H2 = Enable(pin 2)
H5 = Enable(pin 5)
B = 50 PPM Min.
C = 100 PPM Min.*
K = 150 PPM Min.*
A = 25
I603 -
B = 50
NOTE: A 0.01 µF bypass capacitor is recommended between Vcc (pin 6) and GND (pin 3) to minimize power supply noise. * Not available at all
voltages.
ILSI America Phone: 775-851-8880 • Fax: 775-851-8882• e-mail: e-mail@ilsiamerica.com • www.ilsiamerica.com
08/11
Specifications subject to change without notice
Page 1
3.2 mm x 5.0 mm Ceramic Package SMD VCXO, TTL / HC-MOS
I603 Series
Pb Free Solder Reflow Profile:
Typical Application:
*Units are backward compatible with 240C reflow processes
Package Information:
MSL = N.A. (package does not contain plastic, storage life is
unlimited under normal room conditions).
Termination = e4 (Au over Ni over W base metalization).
Tape and Reel Information:
Quantity per
1000
Reel
A
B
16 +/-.3
8 +/-.2
C
D
E
F
7.5 +/-.2
17.5 +/-1
50 / 60 / 80
180 / 250
Environmental Specifications
Thermal Shock
MIL-STD-883, Method 1011, Condition A
MIL-STD-883, Method 1004
MIL-STD-883, Method 2002, Condition B
MIL-STD-883, Method 2007, Condition A
J-STD-020C, Table 5-2 Pb-free devices (except 2 cycles max)
Pb-Free / RoHS / Green Compliant
JESD22-B102-D Method 2 (Preconditioning E)
MIL-STD-883, Method 2004, Test Condition D
MIL-STD-883, Method 1014, Condition C
Moisture Resistance
Mechanical Shock
Mechanical Vibration
Resistance to Soldering Heat
Hazardous Substance
Solderability
Terminal Strength
Gross Leak
Fine Leak
Solvent Resistance
MIL-STD-883, Method 1014, Condition A2, R1=2x10-8 atm cc/s
MIL-STD-202, Method 215
Marking
Line 1: ILSI and Date Code
Line 2: Frequency
ILSI America Phone: 775-851-8880 • Fax: 775-851-8882• e-mail: e-mail@ilsiamerica.com • www.ilsiamerica.com
08/11
Specifications subject to change without notice
Page 2
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