10BQ030PBF [INFINEON]
SCHOTTKY RECTIFIER; 肖特基整流器器
| 型号： | 10BQ030PBF |
| 厂家： | 
Infineon |
| 描述： | SCHOTTKY RECTIFIER |
| 文件： | 总6页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD-20708 rev. G 07/04
10BQ030
1 Amp
SCHOTTKY RECTIFIER
IF(AV) = 1 Amp
VR = 30V
Major Ratings and Characteristics
Description/ Features
The 10BQ030 surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Characteristics
10BQ030 Units
I
Rectangular
waveform
1.0
A
F(AV)
V
I
30
V
A
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
RRM
@t =5ms sine
p
430
FSM
Guard ring for enhanced ruggedness and long term
reliability
V
@1.0Apk, T =125°C
J
0.30
V
F
T
range
- 55to150
°C
J
Case Styles
10BQ030
SMB
1
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10BQ030
Bulletin PD-20708 rev. G 07/04
Voltage Ratings
Part number
10BQ030
VR
Max. DC Reverse Voltage (V)
30
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
10BQ Units
Conditions
IF(AV) Max. Average Forward Current
IFSM Max. Peak One Cycle Non-Repetitive
SurgeCurrent *SeeFig.6
1.0
430
90
A
50%dutycycle@TL = 106°C,rectangularwaveform.
Following any rated
5µs Sineor3µsRect.pulse
10msSineor6msRect. pulse
load condition and
with rated VRRM applied
EAS Non-Repetitive Avalanche Energy
3.0
1.0
mJ TJ =25°C,IAS =1A,L=6mH
Current decayinglinearlytozeroin1µsec
IAR
Repetitive Avalanche Current
A
Frequencylimited byTJ max.Va=1.5xVr typical
Electrical Specifications
Parameters
10BQ Units
Conditions
VFM Max. Forward Voltage Drop
(1) 0.420
V
V
V
V
@ 1A
@ 2A
TJ = 25 °C
0.470
(1) 0.300
0.370
VFM Max. Forward Voltage Drop
@ 1A
@ 2A
TJ = 125 °C
0.5
5.0
15
mA TJ = 25 °C
mA TJ = 100 °C
mA TJ = 125 °C
VR = rated VR
IRM
Max. Reverse Leakage Current (1)
CT
LS
Max. Junction Capacitance
Typical Series Inductance
200
pF
VR = 5VDC, (test signal range 100KHz to 1Mhz) 25°C
2.0
nH Measured lead to lead 5mm from package body
V/µs
dv/dt Max. Voltage Rate of Change
(Rated VR)
10000
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
10BQ Units
Conditions
TJ
Max.Junction Temperature Range(*) -55 to150 °C
Tstg Max. Storage Temperature Range -55 to150 °C
RthJL Max. Thermal Resistance Junction
25
80
°C/W DC operation
°C/W
to Lead
(**)
RthJA Max. Thermal Resistance Junction
to Ambient
wt
Approximate Weight
0.10(0.003) g (oz.)
Case Style
Device Marking
SMB
IR1E
Similar DO-214AA
(*) dPtot
dTj
1
<
thermal runaway condition for a diode on its own heatsink
Rth(j-a)
(**) Mounted 1 inch square PCB
2
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10BQ030
Bulletin PD-20708 rev. G 07/04
10
1
T = 125°C
J
10
100°C
75°C
50°C
0.1
0.01
0.001
0.0001
25°C
0
10
20
30
T = 125°C
Reverse Voltage - V (V)
R
J
Fig.2-Typical Peak Reverse Current
Vs. Reverse Voltage
T = 2 5 ° C
J
1
1000
100
10
T = 25°C
J
0.1
0
0.2
0.4
0.6
0.8
Forward Voltage Drop - V (V)
FM
0
10
20
30
Fig. 1-Maximum Forward Voltage Drop Characteristics
Reverse Voltage - V (V)
R
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage
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3
10BQ030
Bulletin PD-20708 rev. G 07/04
130
0.5
0.4
0.3
0.2
0.1
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
120
DC
D = 0.20
RM S Lim it
110
100
90
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Square wave (D = 0.50)
80%Rated V applied
see note (2)
R
0
0.4
0.8
1.2
F( AV)
1.6
0
0.4
0.8
1.2
F( AV)
1.6
(A)
Average Forward Current - I
(A)
Average Forward Current - I
Fig. 5-Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 4-Maximum Average Forward Current
Vs. Allowable Lead Temperature
1000
100
At Any Rated Load Condition
And With Rated V
Applied
RRM
Fo llo w in g Surg e
10
10
100
1000
10000
Square Wave Pulse Duration - t (microsec)
p
Fig.6-Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formulaused:TC =TJ -(Pd+PdREV)xRthJC
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);
PdREV =InversePowerLoss=VR1 xIR (1-D); IR @VR1=80%ratedVR
4
www.irf.com
10BQ030
Bulletin PD-20708 rev. G 07/04
Outline Table
Device Marking: IR1E
CATHODE
1
ANODE
2
2.15 (.085)
1.80 (.071)
3.80 (.150)
3.30 (.130)
2
POLARITY
PART NUMBER
1
4.70 (.185)
4.10 (.161)
2.5 TYP.
(.098 TYP.)
SOLDERING PAD
2.40 (.094)
1.90 (.075)
0.30 (.012)
1.30 (.051)
0.76 (.030)
0.15 (.006)
2.0 TYP.
(.079 TYP.)
5.60 (.220)
5.00 (.197)
4.2 (.165)
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR1E
VOLTAGE
CURRENT
IR LOGO
YYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
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5
10BQ030
Bulletin PD-20708 rev. G 07/04
Tape & Reel Information
Dimensions in millimetres and (inches)
Ordering Information Table
Device Code
10
B
Q
030 TR
-
1
2
3
4
5
6
1
-
-
-
-
-
Current Rating
2
3
4
5
B
Q
= Single Lead Diode
= Schottky Q Series
Voltage Rating (030 = 30V)
y none= Box (1000 pieces)
y TR = Tape & Reel (3000 pieces)
y none= Standard Production
y PbF = Lead-Free
6
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 07/04
6
www.irf.com
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