10MQ040NTRPBF [INFINEON]
SCHOTTKY RECTIFIER; 肖特基整流器器
| 型号： | 10MQ040NTRPBF |
| 厂家： | 
Infineon |
| 描述： | SCHOTTKY RECTIFIER |
| 文件： | 总7页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD-20772 rev. A 07/04
10MQ040NPbF
SCHOTTKY RECTIFIER
2.1 Amp
IF(AV) = 2.1Amp
VR = 40V
Major Ratings and Characteristics
Description/ Features
The 10MQ040NPbF surface mount Schottky rectifier has been
designed for applications requiring low forward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
switchingpowersupplies,converters,free-wheelingdiodes,battery
charging, and reverse battery protection.
Characteristics
Value
Units
I
DC
2.1
A
F
V
40
120
V
A
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
RRM
I
@tp=5µssine
FSM
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
V
T
@1.5Apk, T =125°C
J
0.56
V
F
range
- 55 to150
°C
J
Case Styles
10MQ040NPbF
SMA
1
www.irf.com
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
Voltage Ratings
Part number
10MQ040NPbF
VR
Max. DC Reverse Voltage (V)
40
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
10MQ Units
Conditions
IF(AV) Max. Average Forward Current
*SeeFig.4
1.5
A
50%dutycycle@TL = 123°C, rectangularwaveform.
OnPCboard9mm2island(.013mmthickcopperpad area)
Following any rated
load condition and
IFSM Max. Peak One Cycle Non-Repetitive
SurgeCurrent *SeeFig. 6
120
30
5µs Sineor3µsRect. pulse
10ms Sineor 6ms Rect. pulse
A
with rated VRRM applied
EAS Non-Repetitive Avalanche Energy
3.0
1.0
mJ TJ =25°C,IAS =1A,L=6mH
A
IAR
Repetitive Avalanche Current
Electrical Specifications
Parameters
10MQ Units
Conditions
VFM Max. Forward Voltage Drop
* See Fig. 1
(1)
0.54
0.62
0.49
0.56
0.5
V
V
V
V
@ 1A
TJ = 25 °C
@ 1.5A
@ 1A
@ 1.5A
TJ = 125 °C
IRM Max. Reverse Leakage Current (1)
* See Fig. 2
mA TJ = 25 °C
mA TJ = 125 °C
V
R = rated VR
26
VF(TO) Threshold Voltage
0.36
104
38
V
TJ = TJ max.
rt
CT
Forward Slope Resistance
Typical Junction Capacitance
Typical Series Inductance
mΩ
pF
VR = 10VDC, TJ = 25°C, test signal = 1Mhz
LS
2.0
10000
nH Measured lead to lead 5mm from package body
V/µs
dv/dt Max. Voltage Rate of Change
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
10MQ Units
Conditions
TJ
Max. Junction Temperature Range (*) - 55 to 150 °C
Tstg Max. Storage Temperature Range
-55 to150 °C
RthJA Max. Thermal Resistance Junction
to Ambient
80
°C/W DC operation
wt
Approximate Weight
CaseStyle
Device Marking
0.07(0.002) g (oz.)
SMA
IR1F
Similar D-64
(*) dPtot
dTj
1
<
thermal runaway condition for a diode on its own heatsink
Rth(j-a)
2
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10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
100
10
10
T = 150°C
J
125°C
100°C
1
0.1
75°C
50°C
0.01
0.001
0.0001
25°C
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
0
5
10 15 20 25 30 35 40
Reverse Voltage - V (V)
R
Fig. 2-Typical Peak Reverse Current
Vs. Reverse Voltage
1
100
T = 25°C
J
0.1
0.2
0.4
0.6
Forward Voltage Drop -VFM (V)
Fig. 1-Maximum Forward Voltage Drop Characteristics
0.8
1
1.2
1.4
1.6
10
0
5
10 15 20 25 30 35 40
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
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3
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
150
140
130
1.4
1.2
1
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
120
D = 0.20
RMS Lim it
0.8
0.6
0.4
0.2
0
D = 0.25
DC
1.6
110
D = 0.33
D = 0.50
D = 0.75
100
90
Square wave (D = 0.50)
80%Rated V applied
R
80
70
see note (2)
0
0.4
0.8
1.2
1.6
2
2.4
0
0.4
0.8
1.2
2
2.4
(A)
Average Forward Current - I
(A)
Average Forward Current - I
F( AV)
F(AV)
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 4-Maximum Average Forward Current
Vs. Allowable Lead Temperature
100
At Any Rated Load Condition
And With Rated V
Fo llo w in g Surg e
Applied
RRM
10
10
100
1000
10000
Square Wave Pulse Duration - t (microsec)
p
Fig. 6-Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formulaused:TC =TJ -(Pd+PdREV)xRthJC
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);
PdREV =InversePowerLoss=VR1 xIR (1-D); IR @VR1=80%ratedVR
4
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10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
Outline Table
CATHODE
ANODE
Device Marking: IR1F
1
2
1.40 (.055)
1.60 (.062)
2.50 (.098)
2.90 (.114)
2
POLARITY
PART NUMBER
1
4.00 (.157)
4.60 (.181)
2.10 MAX.
.152 (.006)
.305 (.012)
(.085 MAX. )
1.47 MIN.
(.058 MIN.)
2.00 (.078)
2.44 (.096)
.103 (.004)
.203 (.008)
0.76 (.030)
1.52 (.060)
1.27 MIN.
(.050 MIN.)
4.80 (.188)
5.28 (.208)
5.53 (.218)
SOLDERING PAD
Outline SMA
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR1F
VOLTAGE
CURRENT
IR LOGO
PYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
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5
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
Tape & Reel Information
Dimensions in millimetres and (inches)
Ordering Information Table
Device Code
10
M
Q
040
N
TR PbF
7
1
2
4
5
6
3
1
-
-
-
-
-
-
Current Rating
M = SMA
2
3
4
5
6
Q
= Schottky Q Series
Voltage Rating (040 = 40V)
= New SMA
y none= Box (1000 pieces)
N
y TR = Tape & Reel (7500 pieces)
y none= Standard Production
y PbF = Lead-Free
7
-
6
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10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
10MQ040N
********************************************
*
*
*
This model has been developed by
*
*
*
*
Wizard SPICE MODEL GENERATOR (1999)
(International Rectifier Corporation)
* Contain Proprietary Information
********************************************
* SPICE Model Diode is composed by a
* simple diode plus paralled VCG2T
*
*
********************************************
.SUBCKT 10MQ040N ANO CAT
D1 ANO 1 DMOD (0.00472)
*Define diode model
.MODEL DMOD D(IS=1.29526323971343E-04A,N=1.14666404869581,BV=52V,
+ IBV=0.260404749526768A,RS= 0.00048144,CJO=2.04792476092255E-08,
+ VJ=1.82174923822158,XTI=2, EG=0.779470593365538)
********************************************
*Implementation of VCG2T
VX 1 2 DC 0V
R1 2 CAT TRES 1E-6
.MODEL TRES RES(R=1,TC1=-43.3354342653501)
GP1 ANO CAT VALUE={-ABS(I(VX))*(EXP((((-4.190325E-03/-43.33543)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-
1))+1)*7.842581E-02*ABS(V(ANO,CAT)))-1)}
********************************************
.ENDS 10MQ040N
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 07/04
www.irf.com
7
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