10YQ045 [INFINEON]
HIGH EFFICIENCY SERIES; 高效率系列型号: | 10YQ045 |
厂家: | Infineon |
描述: | HIGH EFFICIENCY SERIES |
文件: | 总4页 (文件大小:51K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 93860A
SCHOTTKYRECTIFIER
HIGH EFFICIENCY SERIES
10YQ045
10 Amp, 45V
Major Ratings and Characteristics
Description/Features
The 10YQ045 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic isolated
TO-257AA package. The device's forward voltage drop and
reverse leakage current are optimized for the lowest power
loss and the highest circuit efficiency for typical high
frequency switching power supplies and resonent power
converters. Full MIL-PRF-19500 quality conformance
testing is available on source control drawings to TX, TXV
and S levels.
Characteristics
IF(AV)
10YQ045 Units
10
45
A
V
VRRM
IFSM @ tp = 8.3ms half-sine
110
A
V
V
F
@ 10Apk, TJ =125°C
0.70
• Hermetically Sealed
• Low Forward Voltage Drop
• High Frequency Operation
• Guard Ring for Enhanced Ruggedness and Long term
Reliability
TJ,Tstg Operating and storage -55 to 150
°C
• Lightweight
• Glass Eyelets
CASE STYLE
CATHODE OPEN ANODE
IRCaseStyleTO-257AA
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1
01/26/01
10YQ045
Voltage Ratings
Part number
Max. DC Reverse Voltage (V)
10YQ045
45
VR
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
Limits Units
Conditions
IF(AV) Max. AverageForwardCurrent
10
A
50% duty cycle @ TC = 109°C, square waveform
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive
Surge Current
110
A
@ tp = 8.3 ms half-sine
ElectricalSpecifications
Parameters
Limits Units
Conditions
VFM
Max. ForwardVoltageDrop
0.74
0.95
0.73
1.02
0.70
1.10
0.50
23
V
@ 10A
TJ=-55°C
TJ = 25°C
TJ = 125°C
See Fig. 1
V
@ 20A
V
@ 10A
V
@ 20A
V
@ 10A
V
@ 20A
IRM
Max. Reverse Leakage Current
mA
mA
mA
TJ = 25°C
TJ = 100°C
TJ = 125°C
See Fig. 2
VR = rated VR
67
CT
Max. Junction Capacitance
Typical Series Inductance
775
9.8
pF
nH
VR = 5VDC ( 1MHz, 25°C )
L S
Measured from anode lead to cathode lead
6mm ( 0.025 in.) from package
Thermal-MechanicalSpecifications
Parameters
Limits Units
Conditions
TJ
Max.JunctionTemperatureRange
-55 to 150
-55 to 150
2.6
°C
Tstg
Max.StorageTemperatureRange
°C
RthJC Max. Thermal Resistance, Junction
to Case
°C/W
DCoperation
See Fig. 4
wt
Weight(Typical)
Die Size (Typical)
Case Style
3.3
g
125X125
mils
TO-257AA
Pulse Width < 300µs, Duty Cycle < 2%
2
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10YQ045
100
10
125°C
100°C
1
100
10
1
50°C
25°C
0.1
0.01
0.001
0
10
20
30
40
50
Reverse Voltage - V (V)
R
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
1000
Tj = 125°C
Tj = 25°C
T
= 25°C
J
Tj = -55°C
0.0
0.4
0.8
1.2
1.6
Forward Voltage Drop - V (V)
F
100
0
10
20
30
40
50
Reverse Voltage -V (V)
R
Fig. 1 - Max. Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
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3
10YQ045
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x
Z
+ T
thJC C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
180
10YQ045
thJC
160
R
= 2.6 °C/W
140
120
100
80
DC
60
40
20
0
0
4
8
12
16
Average Forward Current - I
(V)
F(AV)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/01
4
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