11DQ03TRPBF [INFINEON]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.1A, 30V V(RRM), Silicon, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN;
| 型号： | 11DQ03TRPBF |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.1A, 30V V(RRM), Silicon, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN 二极管 |
| 文件： | 总5页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD-2.287 rev. F 11/04
11DQ03
11DQ04
SCHOTTKY RECTIFIER
1.1 Amp
Description/ Features
Major Ratings and Characteristics
The 11DQ.. axial leaded Schottky rectifier has been optimized
for very low forward voltage drop, with moderate leakage.
Typical applications are in switching power supplies, convert-
ers, free-wheeling diodes, and reverse battery protection.
Characteristics
Values
Units
I
Rectangular
waveform
1.1
A
F(AV)
Low profile, axial leaded outline
V
I
30/40
225
V
A
V
RRM
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
@tp=5µssine
FSM
Very low forward voltage drop
High frequency operation
V
@1Apk, T =25°C
J
0.55
F
J
Guard ring for enhanced ruggedness and long term
reliability
T
range
-40 to150
°C
Lead-Free plating
CASE STYLE AND DIMENSIONS
Conform to JEDEC Outline DO-204AL (DO-41)
Dimensions in millimeters and inches
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1
11DQ03, 11DQ04
Bulletin PD-2.287 rev. F 11/04
Voltage Ratings
Part number
Max. DC Reverse Voltage (V)
11DQ03
11DQ04
VR
30
40
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
11DQ.. Units
Conditions
IF(AV) Max. Average Forward Current
*SeeFig. 4
1.1
A
50% duty cycle @ TC =75°C, rectangularwaveform
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent *SeeFig. 6
225
35
5µs Sineor3µsRect. pulse
10ms Sine or 6ms Rect. pulse
Following any rated
load condition and with
rated VRRM applied
A
EAS Non-Repetitive Avalanche Energy
3.0
1.0
mJ
A
TJ = 25°C, IAS =1.0Amps,L=6mH
Current decaying linearly to zero in 1 µsec
FrequencylimitedbyTJ max. VA =1.5xVR typical
IAR
Repetitive Avalanche Current
Electrical Specifications
Parameters
11DQ.. Units
Conditions
VFM Max. Forward Voltage Drop
0.55
0.71
0.50
V
V
V
@ 1A
@ 2A
@ 1A
TJ = 25 °C
* See Fig. 1
(1)
TJ = 125 °C
0.61
V
@ 2A
IRM Max. Reverse Leakage Current
1.0
6.0
60
mA TJ = 25 °C
mA TJ = 125 °C
pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
nH Measured lead to lead 5mm from package body
VR = rated VR
* See Fig. 2
(1)
CT
LS
Typical Junction Capacitance
Typical Series Inductance
8.0
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle <2%
10000
V/µs (Rated VR)
Thermal-Mechanical Specifications
Parameters
11DQ.. Units
Conditions
TJ
Max. Junction Temperature Range (*) -40 to150 °C
Tstg Max. Storage Temperature Range
-40 to150 °C
RthJA Max. Thermal Resistance Junction
to Ambient
RthJL Typical Thermal Resistance Junction
to Lead
100
°C/W DC operation
Without cooling fin
°C/W DCOperation (*SeeFig. 4)
81
wt
Approximate Weight
Case Style
0.33(0.012) g(oz.)
DO-204AL(DO-41)
(*) dPtot
dTj
1
<
thermal runaway condition for a diode on its own heatsink
Rth(j-a)
2
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11DQ03, 11DQ04
Bulletin PD-2.287 rev. F 11/04
10
100
10
T
= 150˚C
J
1
125˚C
25˚C
0.1
0.01
0.001
0.0001
T
= 150˚C
= 125˚C
J
0
10
20
30
40
T
J
Reverse Voltage-VR (V)
1
T
= 25˚C
J
Fig.2-Typical Values Of Reverse Current
Vs. Reverse Voltage
100
T
= 25˚C
J
0.1
0
0.3
0.6
0.9
1.2
1.5
10
Forward Voltage Drop-VFM (V)
Fig. 1-Max. Forward Voltage Drop Characteristics
0
10
20
30
40
50
Reverse Voltage-VR (V)
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage
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3
11DQ03, 11DQ04
Bulletin PD-2.287 rev. F 11/04
150
120
90
0.8
0.6
0.4
0.2
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS Limit
DC
60
Square wave (D = 0.50)
80% Rated V applied
R
30
see note (2)
0
0
0.3
0.6
0.9
1.2
1.5
0
0.3
0.6
0.9
1.2
1.5
AverageForwardCurrent-IF(AV) (A)
AverageForwardCurrent-IF(AV) (A)
Fig. 4-Max. Allowable CaseTemperature
Vs. Average Forward Current
Fig. 5-Forward Power Loss
Characteristics
1000
At Any Rated Load Condition
And With Rated V
Following Surge
Applied
RRM
100
10
10
100
1000
10000
Square Wave Pulse Duration - tp (microsec)
Fig.6-Max. Non-Repetitive Surge Current
(2) Formulaused:TC =TJ -(Pd+PdREV)xRthJC
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);
PdREV =InversePowerLoss=VR1 xIR (1-D); IR @VR1=80%ratedVR
4
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11DQ03, 11DQ04
Bulletin PD-2.287 rev. F 11/04
Ordering Information Table
Device Code
11
D
Q
04 TR
2
4
5
1
3
1
2
3
4
5
-
-
-
-
-
11 = 1.1A (Axial and small packages - Current is x10)
D
Q
=
=
DO-41 package
Schottky Q.. Series
04 = 40V
03 = 30V
04 = Voltage Ratings
TR = Tape & Reel package ( 5000 pcs)
-
= Box package (1000 pcs)
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 11/04
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5
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INFINEON
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