15MQ040N [INFINEON]
SCHOTTKY RECTIFIER; 肖特基整流器器型号: | 15MQ040N |
厂家: | Infineon |
描述: | SCHOTTKY RECTIFIER |
文件: | 总6页 (文件大小:174K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin PD-20517 rev. H 07/04
15MQ040N
SCHOTTKY RECTIFIER
3 Amp
IF(AV) = 3 Amp
VR = 40V
Description/ Features
Major Ratings and Characteristics
The 15MQ040N Schottky rectifier is designed to be used for
low-power applications where a reverse voltage of 40 volts is
ancountered and surface mountable is required.
Characteristics
15MQ040N Units
I
DC
3
A
Applications
F
Switching power supplies
Meter protection
V
I
40
V
A
V
RRM
Reverse protection for power input to PC board circuits
Battery isolation and charging
Low threshold voltage diode
Free-wheeling or by-pass diode
Low voltage clamp
@tp=5µssine
330
0.43
FSM
V
@2Apk, T =125°C
J
F
J
Features
T
range
-40to150
°C
Surface mountable
Extremely low forward voltage
Improved reverse blocking voltage capability relative
to other similar size Schottky
Compact size
Case Styles
15MQ040N
SMA
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1
15MQ040N
Bulletin PD-20517 rev. H 07/04
Voltage Ratings
Part number
15MQ040N
VR
Max. DC Reverse Voltage (V)
40
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
15MQ Units
Conditions
IF(AV) Max. Average Forward Current
*SeeFig. 4
2.1
A
50%dutycycle@TL = 105°C, rectangularwaveform.
OnPCboard9mm2 island(.013mmthickcopperpad area)
Following any rated
load condition and
IFSM Max. Peak One Cycle Non-Repetitive
SurgeCurrent *SeeFig. 6
330
140
6.0
5µs Sineor3µsRect. pulse
A
10ms Sine or 6ms Rect. pulse with rated VRRM applied
EAS Non-Repetitive Avalanche Energy
mJ TJ =25°C,IAS =1A,L=12mH
A
IAR
Repetitive Avalanche Current
1.0
Electrical Specifications
Parameters
15MQ Units
Conditions
VFM Max. Forward Voltage Drop
* See Fig. 1
(1)
0.42
0.49
0.34
0.43
0.5
V
V
V
V
@ 1A
@ 2A
@ 1A
@ 2A
TJ = 25 °C
TJ = 125 °C
IRM Max. Reverse Leakage Current (1)
* See Fig. 2
mA TJ = 25 °C
mA TJ = 125 °C
VR = rated VR
20
VF(TO) Threshold Voltage
0.26
64.6
134
V
TJ = TJ max.
rt
Forward Slope Resistance
Typical Junction Capacitance
Typical Series Inductance
mΩ
pF
CT
LS
VR = 10VDC, TJ = 25°C, test signal = 1Mhz
2.0
nH Measured lead to lead 5mm from package body
V/µs (Rated VR)
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
10000
Thermal-Mechanical Specifications
Parameters
15MQ Units
Conditions
TJ
Max. JunctionTemperatureRange (*) -40 to 150 °C
Tstg Max. Storage Temperature Range
-40 to 150 °C
RthJA Max. Thermal Resistance Junction
to Ambient
80
°C/W DC operation
wt
Approximate Weight
Case Style
Device Marking
0.07(0.002) g (oz.)
SMA
IR3F
Similar D-64
(*) dPtot
dTj
1
<
thermal runaway condition for a diode on its own heatsink
Rth(j-a)
2
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15MQ040N
Bulletin PD-20517 rev. H 07/04
100
10
T = 150°C
J
10
125°C
100°C
1
75°C
50°C
0.1
0.01
0.001
25°C
0
5
10 15 20 25 30 35 40
Reverse Voltage - V (V)
T = 150°C
J
R
Fig. 2-Typical Peak Reverse Current
T = 125°C
J
Vs. Reverse Voltage
1
T = 25°C
J
1000
100
10
T = 2 5° C
J
0.1
0.2
0.3
0.4
0.5
0.6
0.7
FM
0.8
0.9
Forward Voltage Drop - V (V)
0
5
10 15 20 25 30 35 40 45
Reverse Voltage - V (V)
R
Fig. 1-Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
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3
15MQ040N
Bulletin PD-20517 rev. H 07/04
150
140
130
120
110
1.6
1.4
D = 0.20
D = 0.25
D = 0.33
DC
1.2 D = 0.50
D = 0.75
1
100
90
80
70
60
50
40
30
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RM S Lim it
0.8
0.6
0.4
0.2
0
DC
Square wave (D = 0.50)
80%Rated V applied
R
see note (2)
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Average Forward Current - I
(A)
Average Forward Current - I
(A)
F( AV)
F( AV)
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 4-Maximum Average Forward Current
Vs. Allowable Lead Temperature
1000
At Any Rated Load Condition
And With Rated V Applied
RRM
Fo llo w in g Surg e
100
10
100
1000
10000
Square Wave Pulse Duration - t (microsec)
p
Fig. 6-Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formulaused:TC =TJ -(Pd+PdREV)xRthJC
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);
PdREV =InversePowerLoss=VR1 xIR (1-D); IR @VR1=80%ratedVR
4
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15MQ040N
Bulletin PD-20517 rev. H 07/04
Outline Table
CATHODE
ANODE
Device Marking: IR3F
1
2
1.40 (.055)
1.60 (.062)
2.50 (.098)
2.90 (.114)
2
POLARITY
PART NUMBER
1
4.00 (.157)
4.60 (.181)
2.10 MAX.
.152 (.006)
.305 (.012)
(.085 MAX. )
1.47 MIN.
(.058 MIN.)
2.00 (.078)
2.44 (.096)
.103 (.004)
.203 (.008)
0.76 (.030)
1.52 (.060)
1.27 MIN.
(.050 MIN.)
4.80 (.188)
5.28 (.208)
5.53 (.218)
SOLDERING PAD
Outline SMA
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR3F
VOLTAGE
CURRENT
IR LOGO
YYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
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5
15MQ040N
Bulletin PD-20517 rev. H 07/04
Tape & Reel Information
Dimensions in millimetres and (inches)
Ordering Information Table
Device Code
15
M
Q
040
N
TR
-
7
1
2
3
4
5
6
1
2
3
4
5
6
-
Current Rating
M = SMA
-
-
-
-
-
Q
= Schottky Q Series
Voltage Rating (040 = 40V)
= New SMA
y none= Box (1000 pieces)
N
y TR = Tape & Reel (7500 pieces)
y none= Standard Production
y PbF = Lead-Free
7
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 07/04
6
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