16TTS12 [INFINEON]
PHASE CONTROL SCR; 相位控制可控硅
| 型号： | 16TTS12 |
| 厂家： | 
Infineon |
| 描述： | PHASE CONTROL SCR |
| 文件： | 总7页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2115 rev. D 12/98
SAFEIR Series
16TTS..
PHASE CONTROL SCR
VT < 1.4V @ 10A
ITSM = 200A
Description/Features
The 16TTS.. SAFEIR series of silicon controlled
rectifiers are specifically designed for medium
VRRM = 800 to 1600V
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125° C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
andoutputrectifierswhichareavailableinidentical
package outlines.
Output Current in Typical Applications
Applications
Single-phase Bridge Three-phase Bridge Units
Capacitiveinputfilter = 55°C, =125°C,
13.5
17
A
T
T
J
A
commonheatsinkof1°C/W
Major Ratings and Characteristics
Characteristics 16TTS.. Units
Package Outline
IT(AV)
Sinusoidal
waveform
10
A
IRMS
VRRM
ITSM
VT
16
upto1600
200
A
V
V
/
DRM
A
@10A,TJ=25°C
1.4
V
dv/dt
di/dt
TJ
500
V/µs
A/µs
°C
150
TO-220AC
range
-40to125
Also available in SMD-220 package (series 16TTS..S)
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1
16TTS.. SAFEIR Series
Bulletin I2115 rev. D 12/98
Voltage Ratings
VRRM, maximum
peak reverse voltage
V
VDRM , maximum
peak direct voltage
V
IRRM/IDRM
125°C
mA
Part Number
16TTS08
16TTS12
16TTS16
800
1200
1600
800
1200
1600
10
Absolute Maximum Ratings
Parameters
16TTS.. Units
Conditions
IT(AV) Max.AverageOn-stateCurrent
10
16
A
@TC=98°C,180°conductionhalfsinewave
IRMS Max.RMSOn-stateCurrent
ITSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent
170
10msSinepulse,ratedVRRMapplied
10msSinepulse,novoltagereapplied
10msSinepulse,ratedVRRMapplied
10msSinepulse,novoltagereapplied
t=0.1to10ms,novoltagereapplied
@10A,TJ = 25°C
200
I2t
Max.I2tforfusing
144
A2s
200
I2√t Max.I2√tforfusing
2000
1.4
A2√s
V
VTM Max.On-stateVoltageDrop
r
On-state slope resistance
24.0
1.1
mΩ
V
TJ = 125°C
t
VT(TO) ThresholdVoltage
IRM/IDMMax.ReverseandDirect
LeakageCurrent
0.5
mA
TJ = 25 °C
VR = rated VRRM/ VDRM
10
TJ = 125 °C
IH
HoldingCurrent
Typ. Max.
Anode Supply = 6V, Resistive load, Initial IT=1A
16TTS08,16TTS12
--
100
150
mA
100
16TTS16
IL
Max.LatchingCurrent
200
mA
AnodeSupply=6V,Resistiveload
dv/dt Max. Rate of Rise of off-state Voltage
di/dt Max. Rate of Rise of turned-on Current
500
150
V/µs
A/µs
2
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16TTS.. SAFEIR Series
Bulletin I2115 rev. D 12/98
Triggering
Parameters
16TTS.. Units
Conditions
PGM Max. peak Gate Power
8.0
2.0
1.5
10
W
PG(AV) Max. average Gate Power
+ IGM Max. paek positive Gate Current
- VGM Max. paek negative Gate Voltage
A
V
IGT
Max. required DC Gate Current
to trigger
90
mA
Anode supply = 6V, resistive load, TJ = - 65°C
Anode supply = 6V, resistive load, TJ = 25°C
Anode supply = 6V, resistive load, TJ = 125°C
Anode supply = 6V, resistive load, TJ = - 65°C
Anode supply = 6V, resistive load, TJ = 25°C
60
35
VGT Max. required DC Gate Voltage
to trigger
3.0
2.0
V
1.0
0.2
2.0
Anode supply = 6V, resistive load, TJ = 125°C
TJ = 125°C, VDRM = rated value
VGD Max. DC Gate Voltage not to trigger
IGD Max. DC Gate Current not to trigger
mA
TJ = 125°C, VDRM = rated value
Switching
Parameters
16TTS..
0.9
Units
µs
Conditions
TJ = 25°C
tgt
trr
tq
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
4
TJ = 125°C
110
Thermal-Mechanical Specifications
Parameters
16TTS.. Units
Conditions
TJ
Max.JunctionTemperatureRange
-40to125
-40to125
1.3
°C
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
°C/W
DCoperation
toCase
RthJA Max.ThermalResistanceJunction
62
toAmbient
RthCS Typ.ThermalResistanceCase
toHeatsink
0.5
Mountingsurface,smoothandgreased
wt
T
ApproximateWeight
MountingTorque
2(0.07)
g(oz.)
Min.
6(5)
Kg-cm
(Ibf-in)
Max.
12(10)
CaseStyle
TO-220AC
3
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16TTS.. SAFEIR Series
Bulletin I2115 rev. D 12/98
125
120
115
110
105
100
95
125
16TTS.. Se rie s
16TTS.. Se rie s
(DC) = 1.3 °C / W
R
(DC ) = 1.3 °C/ W
R
thJC
thJC
120
115
110
105
100
95
C o nd u ctio n Pe rio d
C o nd uc tio n Ang le
30°
30°
60°
60°
90°
120°
90°
120°
180°
180°
DC
90
90
0
2
4
6
8
10
12
0
2
4
6
8
10 12 14 16
Ave ra g e On -sta te C urre nt (A)
Ave ra g e On -sta te Curre nt (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
18
16
14
12
10
8
25
20
15
10
5
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Lim it
RMS Limit
Co nd uc tio n An g le
6
C o nd uctio n Perio d
16TTS.. Se rie s
4
16TTS.. Se rie s
T
= 125°C
J
T = 125°C
J
2
0
0
0
1
2
3
4
5
6
7
8
9
10 11
0
2
4
6
8
10 12 14 16 18
Ave ra g e O n-sta te Curre n t (A)
Fig. 3 - On-state Power Loss Characteristics
Ave ra g e On -sta te Curre nt (A)
Fig. 4 - On-state Power Loss Characteristics
180
200
At Any Ra te d Lo a d Co nd ition And With
Ma xim um Non Re pe titive Surg e Curre nt
Ra te d V
Ap p lie d Follo wing Surg e .
Ve rsus Pulse Tra in Dura tio n.
RRM
Initia l T = 125°C
Initia l T = 125°C
180
160
140
120
100
80
J
J
160
140
120
100
80
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Volta ge Re a p p lie d
Ra te d V
Re a pp lie d
RRM
16TTS..Se rie s
16TTS.. Serie s
1
10
100
0.01
0.1
1
Numb e r O f Eq ua l Amp litud e Ha lf C yc le C urren t Pu lse s (N)
Pulse Train Dura tio n (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
4
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16TTS.. SAFEIR Series
Bulletin I2115 rev. D 12/98
1000
100
10
16TTS.. Se rie s
T = 25°C
J
T = 125°C
J
1
0
1
2
3
4
5
In sta nta ne o us O n-st ate Vo lta g e (V)
Fig. 7 - On-state Voltage Drop Characteristics
10
1
Ste a d y Sta te Va lue
(DC Op e ra tio n)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Sin gle Pulse
16TTS.. Se rie s
1
0.01
0.0001
0.001
0.01
Squa re Wa ve Pulse Dura tio n (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
0.1
10
100
10
1
Re c ta ng ula r g a te p ulse
(1) PG M = 40 , tp = 1 ms
(2) PG M = 20 W, tp = 2 ms
(3) PG M = 8 W, tp = 5 ms
(4) PG M = 4 W, tp = 10 ms
a )Re c o mm e nd e d loa d line for
ra te d d i/d t: 10 V, 20 o hm s
tr = 0.5 µs, tp >= 6 µs
b )Re c o mm e nd e d loa d line for
<= 30% ra te d d i/ d t: 10 V, 65 oh m s
tr = 1 µs, tp >= 6 µs
(a )
(b )
(3)
(2) (1)
(4)
VG D
IG D
16TTS.. Se rie s
0.1
Fre q ue nc y Lim ite d b y PG(AV)
10
0.1
0.001
0.01
1
100
Insta n ta ne ous G a te C urre n t (A)
Fig. 9 - Gate Characteristics
5
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16TTS.. SAFEIR Series
Bulletin I2115 rev. D 12/98
Outline Table
10.54 (0.41)
1.32 (0.05)
1.22 (0.05)
2
MAX.
3.78 (0.15)
3.54 (0.14)
DIA.
6.48 (0.25)
6.23 (0.24)
2.92 (0.11)
2.54 (0.10)
15.24 (0.60)
14.84 (0.58)
TERM 2
2°
1
2 3
14.09 (0.55)
13.47 (0.53)
3.96 (0.16)
3.55 (0.14)
0.10 (0.004)
2.04 (0.080) MAX.
1.40 (0.05)
1.15 (0.04)
2.89 (0.11)
2.84 (0.10)
0.94 (0.04)
0.69 (0.03)
1
2 3
0.61 (0.02) MAX.
4.57 (0.18)
4.32 (0.17)
Dimensionsinmillimeters(andinches)
5.08 (0.20) REF.
Ordering Information Table
Device Code
16
T
T
S
16
2
(A)
1
2
4
5
3
1
2
-
-
CurrentRating
1 (K) (G) 3
CircuitConfiguration:
T = Single Thyristor
Package:
3
4
5
-
-
-
T = TO-220AC
Type of Silicon:
S = Converter Grade
08 = 800V
12 = 1200V
16 = 1600V
Voltage code: Code x 100 = V
RRM
6
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16TTS.. SAFEIR Series
Bulletin I2115 rev. D 12/98
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
EUROPEANHEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
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