175BGQ030J [INFINEON]
SCHOTTKY RECTIFIER; 肖特基整流器器
| 型号： | 175BGQ030J |
| 厂家： | 
Infineon |
| 描述： | SCHOTTKY RECTIFIER |
| 文件： | 总7页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD-20997 rev. E 12/02
175BGQ030
175BGQ030J
SCHOTTKY RECTIFIER
175 Amp
Major Ratings and Characteristics
Description/ Features
The175BGQ030Schottkyrectifierhasbeenoptimizedforultralow
forward voltage drop specifically for low voltage output in high
currentAC/DCpowersupplies.
Theproprietarybarriertechnologyallowsforreliableoperationup
to 150°C junction temperature. Typical applications are in
switchingpowersupplies,converters,reversebatteryprotection,
andredundantpowersubsystems.
Characteristics
175BGQ030 Units
I
Rectangular waveform
175
115
A
°C
A
F(AV)
@T
C
I
Maximum
248
DC
150°CT operation
J
HighFrequencyOperation
V
I
30
V
RRM
@tp=5µssine
8000
0.45
A
Ultralowforwardvoltagedrop
ContinuousHighCurrentoperation
FSM
V
@175Apk typical
V
F
Guardringforenhancedruggednessandlongterm
reliability
PowIRtabTM package
@T
J
150
°C
°C
T
range
-55 to150
J
Case Styles
175BGQ030
175BGQ030J
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1
175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
Voltage Ratings
Part number
175BGQ030
VR
Max. DC Reverse Voltage (V)
30
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
175BGQ Units
Conditions
IF(AV) Max.AverageForwardCurrent
175
A
50%dutycycle@TC=115°C,rectangularwaveform
IF(RMS) RMS ForwardCurrent
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent
248
8000
1500
A
TC=114°C
Followinganyrated
loadconditionand
withratedVRRMapplied
5µs Sineor3µsRect.pulse
10msSineor6msRect. pulse
A
EAS Non-RepetitiveAvalancheEnergy
80
12
mJ
A
TJ=25°C, IAS=12Amps,L=1.12mH
IAR
RepetitiveAvalancheCurrent
Currentdecayinglinearlytozeroin1µsec
FrequencylimitedbyTJ max.VA =1.5xVR typical
Electrical Specifications
Parameters
175BGQ Units
Conditions
Typ. Max.
VFM Forward Voltage Drop
(1) (2) 0.46 0.48
V
V
V
V
@ 100A
TJ = 25 °C
@ 175A
0.53 0.56
0.35 0.38
0.45 0.49
@ 100A
TJ = 150 °C
@ 175A
IRM
ReverseLeakageCurrent(1)
1.3 4.5 mA
450 650 mA
160 220 mA
1400 2000 mA
TJ = 25 °C
VR = rated VR
TJ = 125°C
TJ = 125 °C
TJ = 150 °C
TJ = TJ max.
VR = 15V
VR = 30V
VF(TO) ThresholdVoltage
0.242
1.4
V
mΩ
pF
rt
ForwardSlopeResistance
CT
LS
Max. Junction Capacitance
TypicalSeriesInductance
8500
3.5
VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C
Measured from tab to mounting plane
nH
dv/dt Max. Voltage Rate of Change
(RatedVR)
10000
V/ µs
(1) Pulse Width < 300µs, Duty Cycle < 2%
(2) VFM = VF(TO) + r x IF
t
Thermal-Mechanical Specifications
Parameters
175BGQ Units
Conditions
TJ
Max.JunctionTemperatureRange
-55to150
-55to150
0.25
°C
°C
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
toCase
°C/W DCoperation
RthCS TypicalThermalResistance,Caseto
Heatsink
0.20
°C/W Mountingsurface,smoothandgreased
wt
T
ApproximateWeight
MountingTorque
5(0.18) g(oz.)
Min.
1.2(10)
2.4(20)
N*m
(Ibf-in)
Max.
CaseStyle
PowIRtabTM
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2
175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
1000
100
10
10000
1000
100
10
T
= 150°C
J
125°C
100°C
75°C
50°C
1
25°C
0.1
0.01
T
= 150°C
= 125°C
J
0
5
10
15
20
25
30
T
Re ve rse Volta g e - V (V)
J
R
Fig.2-Typical Values of Reverse Current
Vs. Reverse Voltage
T
= 25°C
J
10000
T
= 25°C
J
1
1000
0
0.2
0.4
0.6
0.8
1
1.2
0
5
10
15
20
25
30
35
Fo rwa rd Volta g e Drop - V
(V)
Re ve rse Volta g e - V (V)
FM
R
Fig.1-Maximum Forward Voltage Drop Characteristics
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage
1
D = 0.75
D = 0.50
D = 0.33
P
D = 0.25
DM
0.1
D = 0.20
t
1
t
Sing le Pulse
(The rma l Re sista nc e )
2
Note s:
1. Duty fa c tor D = t / t
2
1
2. Pe a k T = PDM x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
, Re c ta ng ula r Pulse Dura tio n (Se c o nd s)
1
Fig.4-Maximum Thermal Impedance ZthJC Characteristics
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3
175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
150
140
180
160
140
120
100
80
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
130
120
RMS Lim it
DC
110
100
90
Sq ua re wa ve (D = 0.50)
80% Ra te d V a p p lie d
R
60
40
20
se e note (2)
80
0
0
40
80 120 160 200 240 280
0
50
100
150
200
250
(A)
Ave ra g e Forwa rd Curre nt - I
(A)
Ave ra g e Forwa rd Curre nt - I
F(AV)
F(AV)
Fig.5-MaximumAllowableCaseTemperature
Vs.AverageForwardCurrent
Fig.6-Forward Power Loss Characteristics
10000
At Any Ra te d Loa d Cond ition
And With Ra te d V
Following Surg e
Ap p lie d
RRM
1000
10
100
1000
10000
Sq ua re Wa ve Pulse Dura tion - t (m ic rose c )
p
Fig.7-MaximumNon-RepetitiveSurgeCurrent
L
HIG H-SPEED
SWITCH
IRFP460
DUT
FREE-WHEEL
DIO DE
Rg = 25 ohm
Vd = 25 Volt
+
C URRENT
MONITOR
40HFL40S02
Fig.8-Unclamped Inductive Test Circuit
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
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4
175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
Outline Table
CaseStyle PowIRtabTM
Dimensions in millimeters and (inches)
CaseStyle PowIRtabTM"J"version
Dimensions in millimeters and (inches)
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5
175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
Ordering Information Table
Device Code
175 BGQ 030
J
2
4
1
3
1
2
3
4
6
-
-
-
-
Current Rating
Essential Part Number
Voltage code: Code = V
none = PowIRtabTMstandard
RRM
J
= ShortLeadVersion
***************************************************
Thismodelhasbeendevelopedby
Wizard SPICE MODEL GENERATOR(1999)
(InternationalRectifier Corporation)
containsProprietaryInformation
This model
***************************************************
SPICE Model Diode is composed by a
simple diode plus paralled VCG2T
***************************************************
.SUBCKT175bgq30 ANOCAT
D1 ANO 1 DMOD (0.24359)
*Define diode model
.MODEL DMOD D(IS=1.3875007809205E-04A,N=1.00125798542747,BV=30V,
+IBV=0.160931851779476A,RS=0.0001656412,CJO=5.05942026644635E-08,
+VJ=1.99501834690192,XTI=2,EG=0.711439066978857)
*****************************************************
*ImplementationofVCG2T
VX 1 2 DC 0V
R1 2 CAT TRES 1E-6
.MODEL TRES RES(R=1,TC1=4.01799427965033)
GP1 ANO CAT VALUE={-ABS(I(VX))*(EXP((((-3.827089E-03/
4.017994)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-1))+1)*0.122401*ABS(V(ANO,CAT)))-1)}
*****************************************************
.ENDS 175bgq30
ThermalModelSubcircuit
.SUBCKT 175bgq30T 5 1
CTHERM1
CTHERM2
CTHERM3
CTHERM4
5
4
3
2
4
3
2
1
1.30E+3
2.87E+2
1.56E+4
2.37E+5
RTHERM1
RTHERM2
RTHERM3
RTHERM4
5
4
3
2
4
3
2
1
3.13E-2
1.42E-1
6.70E-2
1.72E-4
.ENDS 175bgq30T
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6
175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 12/02
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7
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