180RKI100M [INFINEON]
Silicon Controlled Rectifier, 285A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB;型号: | 180RKI100M |
厂家: | Infineon |
描述: | Silicon Controlled Rectifier, 285A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB 栅极 触发装置 可控硅整流器 |
文件: | 总7页 (文件大小:136K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I25153 revꢀ D 09/03
180/181RKI SERIES
PHASE CONTROL THYRISTORS
Stud Version
Features
Hermetic glass-metal seal
180A
International standard case TO-209AB (TO-93)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
180/181RKI
Units
A
IT(AV)
180
80
@ TC
°C
IT(RMS)
ITSM
285
3800
4000
72
A
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
A
A
I2t
KA2s
KA2s
66
VDRM/VRRM
400 to 1000
100
V
case style
t
typical
µs
q
TO-209AB (TO-93)
TJ
- 40 to 125
°C
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180/181RKI Series
Bulletin I25153 revꢀ D 09/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
VDRM/VRRM, maxꢀ repetitive
VRSM , maximum non-
IDRM/IRRM maxꢀ
Type number Code
peak and off-state voltage
V
repetitive peak voltage
V
@ TJ = TJ maxꢀ
mA
40
400
500
180/181RKI
80
800
900
30
100
1000
1100
On-state Conduction
Parameter
180/181RKI
Units Conditions
IT(AV) Maxꢀ
@ Case temperature
IT(RMS) Maxꢀ RMS on-state current
average
on-state
current
80
180
°C
A180°
conduction,
half
sine
wave
285
3800
4000
3500
3660
72
DC @ 79°C case temperature
ITSM
Maxꢀ peak, one-cycle
t = 10ms
t = 8ꢀ3ms
t = 10ms
t = 8ꢀ3ms
t = 10ms
t = 8ꢀ3ms
t = 10ms
t = 8ꢀ3ms
No voltage
reapplied
100% VRRM
reapplied
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ maxꢀ
I2t
Maximum I2t for fusing
No voltage
reapplied
100% VRRM
reapplied
66
KA2s
61
56
I2√t
Maximum I2√t for fusing
720
KA2√s t = 0ꢀ1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
0ꢀ83
0ꢀ89
(16ꢀ7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ maxꢀ
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ maxꢀ
voltage
rt1
Low level value of on-state
slope resistance
0ꢀ92
0ꢀ81
(16ꢀ7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ maxꢀ
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ maxꢀ
VTM
IH
Maxꢀ on-state voltage
Maximum holding current
Typical latching current
1ꢀ35
600
V
I = 570A, TJ = TJ max, t = 10ms sine pulse
pk p
mAT
J = 25°C, anode supply 12V resistive load
IL
1000
Switching
Parameter
180/181RKI
Units Conditions
di/dt
Maxꢀ non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤1µs
r
300
A/µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
Typical turn-off time
1ꢀ0
d
V
= 0ꢀ67% VDRM, TJ = 25°C
d
µs
ITM = 50A, TJ = TJ max, di/dt = 10A/µs, VR = 100V
dv/dt = 20V/µs
t
100
q
2
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180/181RKI Series
Bulletin I25153 revꢀ D 09/03
Blocking
Parameter
180/181RKI
Units Conditions
V/µs TJ = TJ maxꢀ linear to 80% rated VDRM
dv/dt Maximum critical rate of rise of
off-state voltage
500
IRRM
IDRM
Maxꢀ peak reverse and off-state
leakage current
30
mAT
J = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Maxꢀ peak positive
180/181RKI
Units Conditions
PGM
10
TJ = TJ max, t ≤ 5ms
p
W
2ꢀ0
TJ = TJ max, f = 50Hz, d% = 50
gate
current
3ꢀ0 J = TJ maxA, tT ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ maxꢀ, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5ꢀ0
TYPꢀ
130
MAXꢀ
IGT
DC gate current required
to trigger
TJ = - 40°C
-
150
-
65
35
mATJ
J = 125°C
TJ = - 40°C
TJ 25°C
J = 125°C
=
25°C
Maxꢀ required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
T
VGT
DC gate voltage required
to trigger
2ꢀ0
1ꢀ2
0ꢀ9
-
2ꢀ5
-
V
=
T
Maxꢀ gate current/ voltage not to
trigger is the maxꢀ value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
mA
V
TJ = TJ maxꢀ
VGD
0ꢀ25
Thermal and Mechanical Specification
Parameter
180/181RKI
-40 to 125
Units Conditions
TJ
T
Maxꢀoperatingtemperaturerange
Maxꢀstoragetemperaturerange
°C
-40 to 150
stg
RthJC Maxꢀthermalresistance,
0ꢀ15
DCoperation
K/W
junction to case
RthCS Maxꢀthermalresistance,
0ꢀ04
Mounting surface, smooth, flat and greased
case to heatsink
T
Mountingtorque,±10%
31
Non lubricated threads
(275)
24ꢀ5
(210)
280
Nm
(lbf-in)
Lubricated threads
wt
Approximateweight
Casestyle
g
TO-209AB(TO-93)
SeeOutlineTable
3
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180/181RKI Series
Bulletin I25153 revꢀ D 09/03
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
180°
120°
90°
0ꢀ050
0ꢀ063
0ꢀ080
0ꢀ118
0ꢀ225
0ꢀ032
0ꢀ059
0ꢀ082
0ꢀ124
0ꢀ228
K/W
TJ = TJ maxꢀ
60°
30°
Ordering Information Table
Device Code
18
1
RKI 100
1
2
-
-
IT(AV) rated average output current (rounded/10)
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
Thyristor
1
2
3
4
3
4
-
-
Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
Outline Table
GLASS METAL SEAL
19 (0.75) MAX.
8.5 (0.33) DIA.
4 (0.16) MAX.
4.3 (0.17) DIA.
FLEXIBLE LEAD
2
C.S. 25mm
(0.039 s.i.)
RED SILICON RUBBER
RED CATHODE
2
C.S. 0.4mm
(0.0006 s.i.)
WHITE GATE
+I
CaseStyleTO-209AB(TO-93)
All dimensions in millimeters (inches)
+
220 (8.66) 10 (0.39)
-
RED SHRINK
Fast-on Terminals
WHITE SHRINK
AMP. 280000-1
REF-250
28.5 (1.12) MAX. DIA.
SW 32
3/4"-16UNF-2A
35 (1.38) MAX.
4
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180/181RKI Series
Bulletin I25153 revꢀ D 09/03
130
120
110
100
90
130
120
110
100
90
180/181RKISeries
180/181RKISeries
R
(DC) = 0.15 K/ W
R
(DC) = 0.15 K/ W
thJC
thJC
Co nd uc tio n Pe rio d
C o nd uc tio n Ang le
30°
60°
90°
120°
30°
180°
200
80
80
60°
90°
120°
180°
DC
250
70
70
0
20 40 60 80 100 120 140 160 180 200
Ave ra g e O n-sta te Curre nt (A)
0
50
100
150
300
Ave ra g e On-sta te Curre nt (A)
Figꢀ 1 - Current Ratings Characteristics
Figꢀ 2 - Current Ratings Characteristics
240
180°
120°
90°
60°
30°
220
200
180
160
140
120
100
80
0
.
6
K
/
W
0
.
8
RMS Lim it
K
/
W
1
K
/
W
C o nd uc tio n Ang le
1
.
5
K
/
W
60
180/181RKISeries
2
K
/
W
40
T
= 125°C
J
20
0
0
20 40 60 80 100 120 140 160 18
0
25
50
75
100
125
Ave ra g e On-sta te Curre nt (A)
Ma xim um Allow a b le Am b ie nt Te m p e ra ture (°C)
Figꢀ 3 - On-state Power Loss Characteristics
350
300
250
200
DC
180°
120°
90°
60°
30°
0
.
3
K
/
W
150 RMS Lim it
C o nd uc tio n Pe rio d
1
K
/
W
100
50
0
1
.
5
K/
W
180/181RKISeries
2
K
/
W
T
= 125°C
J
0
50
Ave ra g e On-sta te Curre nt (A)
Figꢀ 4 - On-state Power Loss Characteristics
100
150
200
250
3
0
25
50
75
100
125
Ma xim um Allowa b le Am b ie nt Te m p e ra ture (°C)
5
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180/181RKI Series
Bulletin I25153 revꢀ D 09/03
4000
4000
3500
3000
2500
2000
1500
Ma xim um Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion. Control
Of Cond uc tion Ma y Not Be Ma inta ine d .
At Any Ra te d Loa d Cond ition And With
Ra te d V
Ap p lie d Followin g Surg e .
RRM
Initia l T = 125°C
J
3500
3000
2500
2000
1500
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initia l T = 125°C
J
No Volta g e Re a pp lie d
Ra te d V
Re a p p lie d
RRM
180/181RKISeries
180/181RKISeries
1
10
100
0.01
0.1
Pulse Tra in Dura tion (s)
1
Num b e r O f Eq ua l Amp litud e Ha lf C yc le C urre nt Pulse s (N)
Figꢀ 5 - Maximum Non-Repetitive Surge Current
Figꢀ 6 - Maximum Non-Repetitive Surge Current
10000
T = 25°C
J
1000
T = 125°C
J
180/181RKISeries
100
0.5
1
1.5
Insta nta ne ous On-sta te Volta g e (V)
Figꢀ 7 - On-state Voltage Drop Characteristics
2
2.5
3
1
Ste a d y Sta te Va lue
= 0.15 K/ W
R
thJC
(DC Op e ra tion)
0.1
0.01
0.001
180/181RKISeries
0.001
0.01
0.1
1
10
Sq ua re Wa ve Pulse Dura tio n (s)
Figꢀ 8 - Thermal Impedance ZthJC Characteristic
6
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180/181RKI Series
Bulletin I25153 revꢀ D 09/03
100
10
1
Re c ta ng ula r g a te p ulse
(1) PGM = 12W, tp = 5m s
a ) Re c om m e nd e d loa d line for
ra te d d i/ d t: 20V, 30ohm s;
tr<=0.5 µs, tp =>6µs
b ) Re c om m e n d e d loa d line fo r
<=30% ra te d d i/ d t: 15V, 40ohm s
(2) PGM = 30W, tp = 2m s
(3) PGM = 60W, tp = 1m s
(4) PGM = 200W, tp = 300µs
(b )
tr<=1 µs, tp =>6µs
(a )
(2) (3)
(1)
(4)
VGD
IGD
0.01
Device:180/181RKISeries
Fre q ue nc y Lim ite d b y PG(AV)
10 100 1000
0.1
0.001
0.1
1
Insta nta ne o us Ga te Curre nt (A)
Figꢀ 9 - Gate Characteristics
Data and specifications subject to change without noticeꢀ
This product has been designed and qualified for Industrial Levelꢀ
Qualification Standards can be found on IR's Web siteꢀ
IR WORLD HEADQUARTERS: 233 Kansas Stꢀ, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at wwwꢀirfꢀcom for sales contact informationꢀ 03 /03
7
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