20BQ030TR [INFINEON]
SCHOTTKY RECTIFIER; 肖特基整流器器
| 型号： | 20BQ030TR |
| 厂家： | 
Infineon |
| 描述： | SCHOTTKY RECTIFIER |
| 文件： | 总6页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD-20717 rev. G 07/04
20BQ030
SCHOTTKY RECTIFIER
2 Amp
IF(AV) = 2 Amp
VR = 30V
Major Ratings and Characteristics
Description/ Features
The 20BQ030 surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Characteristics
20BQ030 Units
I
Rectangular waveform
2.0
A
F(AV)
V
I
30
V
A
V
RRM
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
@tp=5µssine
350
0.37
FSM
Guard ring for enhanced ruggedness and long term
V
@2.0Apk, T =125°C
J
F
J
reliability
T
range
-55 to150
°C
Case Styles
20BQ030
SMB
1
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20BQ030
Bulletin PD-20717 rev. G 07/04
Voltage Ratings
Part number
20BQ030
VR
Max. DC Reverse Voltage (V)
30
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
20BQ Units
Conditions
IF(AV) Max. Average Forward Current
IFSM Max. PeakOneCycleNon-Repetitive
Surge Current
2.0
350
80
A
50%dutycycle@TL = 119°C,rectangularwaveform.
Following any rated
5µs Sineor3µsRect.pulse
10msSineor6msRect. pulse
load condition and
with rated VRRM applied
EAS Non-Repetitive Avalanche Energy
3.0
1.0
mJ TJ =25°C,IAS =1A,L=6mH
Current decayinglinearlytozeroin1µsec
IAR
Repetitive Avalanche Current
A
Frequencylimited byTJ max.Va=1.5xVr typical
Electrical Specifications
Parameters
20BQ Units
Conditions
VFM Max. Forward Voltage Drop
(1)
(1)
0.470
0.550
0.370
0.470
0.5
V
V
V
V
@ 2A
TJ = 25 °C
@ 4A
@ 2A
@ 4A
VFM Max. Forward Voltage Drop
TJ = 125 °C
IRM Max. Reverse Leakage Current (1)
mA TJ = 25 °C
mA TJ = 125 °C
VR = rated VR
15
CT
LS
Max. Junction Capacitance
Typical Series Inductance
200
2.0
pF
VR = 5VDC, (test signal range 100KHz to 1Mhz) 25°C
nH Measured lead to lead 5mm from package body
V/µs
dv/dt Max. Voltage Rate of Change
(Rated VR)
10000
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
20BQ Units
Conditions
TJ
Max.Junction Temperature Range (*) - 55 to 150 °C
Tstg Max. Storage Temperature Range -55 to150 °C
RthJL Max. Thermal Resistance Junction
25
80
°C/W DC operation
°C/W
to Lead
(**)
RthJA Max. Thermal Resistance Junction
to Ambient
wt
Approximate Weight
0.10(0.003) g (oz.)
Case Style
Device Marking
SMB
IR2E
Similar DO-214AA
(*) dPtot
dTj
1
<
thermal runaway condition for a diode on its own heatsink
Rth(j-a)
(**) Mounted 1 inch square PCB
2
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20BQ030
Bulletin PD-20717 rev. G 07/04
100
10
10
T = 150°C
J
125°C
100°C
1
75°C
50°C
0.1
0.01
0.001
0.0001
25°C
T = 150°C
J
T = 125°C
J
T = 25° C
J
0
5
10
15
20
25
30
Reverse Voltage - V (V)
R
1
Fig.2-Typical Peak Reverse Current
Vs. Reverse Voltage
1000
100
10
T = 25°C
J
0.1
0
10
20
30
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Reverse Voltage - V (V)
R
Forward Voltage Drop - V (V)
FM
Fig. 1-Maximum Forward Voltage Drop Characteristics
100
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage
D = 0.75
D = 0.50
10
1
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
Single Pulse
(Thermal Resistance)
1. Duty factor D = t / t
.
2
L
1
2. Peak T = PDM x Z
+ T .
J
thJL
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (Seconds)
1
Fig.4-Maximum Thermal Impedance ZthJL Characteristics
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3
20BQ030
Bulletin PD-20717 rev. G 07/04
1.2
1
150
140
130
120
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
0.8
0.6
0.4
0.2
0
110
100
90
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS Lim it
DC
80
Square wave (D = 0.50)
80%Rated V applied
R
70
60
see note (2)
50
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Average Forward Current - I
(A)
Average Forward Current - I
(A)
F(AV)
F(AV)
Fig. 6-Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 5-Maximum Average Forward Current
Vs. Allowable Lead Temperature
1000
100
At Any Rated Load Condition
And With Rated V
Following Surge
Applied
RRM
10
10
100
1000
10000
Square Wave Pulse Duration - t (microsec)
p
Fig.7-Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formulaused:TL =TJ -(Pd+PdREV)xRthJL
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);
PdREV =InversePowerLoss=VR1 xIR (1-D); IR @VR1 =80%ratedVR
4
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20BQ030
Bulletin PD-20717 rev. G 07/04
Outline Table
Device Marking: IR2E
CATHODE
1
ANODE
2
2.15 (.085)
1.80 (.071)
3.80 (.150)
3.30 (.130)
2
POLARITY
PART NUMBER
1
4.70 (.185)
4.10 (.161)
2.5 TYP.
SOLDERING PAD
(.098 TYP.)
2.40 (.094)
1.90 (.075)
0.30 (.012)
1.30 (.051)
0.76 (.030)
0.15 (.006)
2.0 TYP.
(.079 TYP.)
5.60 (.220)
5.00 (.197)
4.2 (.165)
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR2E
VOLTAGE
CURRENT
IR LOGO
YYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
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5
20BQ030
Bulletin PD-20717 rev. G 07/04
Tape & Reel Information
Dimensions in millimetres and (inches)
Ordering Information Table
Device Code
20
B
Q
030 TR
-
2
4
5
6
1
3
1
-
-
-
-
-
Current Rating
2
3
4
5
B
Q
= Single Lead Diode
= Schottky Q Series
Voltage Rating (030 = 30V)
y none= Box (1000 pieces)
y TR = Tape & Reel (3000 pieces)
y none= Standard Production
y PbF = Lead-Free
6
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 07/04
6
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