20ETS12 [INFINEON]
SURFACE MOUNTABLE INPUT RECTIFIER DIODE; 表面贴装输入整流二极管
| 型号： | 20ETS12 |
| 厂家： | 
Infineon |
| 描述： | SURFACE MOUNTABLE INPUT RECTIFIER DIODE |
| 文件： | 总6页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2134 rev. C 03/99
SAFEIR Series
20ETS..FP
INPUT RECTIFIER DIODE
TO-220 FULLPAK
VF < 1V @ 10A
IFSM = 300A
Description/Features
VRRM 800 to 1600V
The 20ETS..FP rectifier SAFEIR series has been
optimized for very low forward voltage drop, with
moderate leakage. The glass passivation
technologyusedhasreliableoperationupto150°C
junction temperature.
Typical applications are in input rectification and
these products are designed to be used with
International Rectifier Switches and Output
Rectifiers which are available in identical package
outlines. Fully isolated package (VINS = 2500 VRMS).
UL E78996 approved
Output Current in Typical Applications
Applications
Single-phase Bridge Three-phase Bridge
Units
CapacitiveinputfilterTA=55°C,TJ=125°C,
commonheatsinkof1°C/W
A
18
22
Package Outline
Major Ratings and Characteristics
Characteristics
20ETS..FP Units
I
Sinusoidal
waveform
F(AV)
20
800to1600
300
A
V
A
V
V
I
RRM
FSM
V
@10A,T =25°C
J
1.0
F
J
TO-220 FULLPAK
T
-40to150
°C
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1
20ETS..FP SAFEIR Series
Bulletin I2134 rev. C 03/99
Voltage Ratings
VRRM, maximum
peak reverse voltage
V
VRSM , maximum non repetitive
IRRM
150°C
mA
peak reverse voltage
V
Part Number
20ETS08FP
20ETS12FP
20ETS16FP
800
1200
1600
900
1300
1700
1
Provide terminal coating for voltages above 1200V
Absolute Maximum Ratings
Parameters
20ETS..FP Units
Conditions
IF(AV) Max.AverageForwardCurrent
20
A
@TC=88°C,180°conductionhalfsine wave
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent
250
300
10msSinepulse,ratedVRRMapplied
10msSine pulse,novoltagereapplied
A
I2t
Max. I2tforfusing
316
442
10msSinepulse,ratedVRRMapplied
10msSinepulse,novoltagereapplied
t=0.1to10ms,novoltagereapplied
A2s
I2√t Max.I2√tforfusing
4420
A2√s
Electrical Specifications
Parameters
20ETS..FP Units
Conditions
VFM Max. Forward Voltage Drop
1.1
10.4
0.85
0.1
V
mΩ
V
@ 20A, TJ = 25°C
rt
Forward slope resistance
TJ = 150°C
VF(TO) Threshold voltage
IRM Max. Reverse Leakage Current
TJ = 25 °C
VR = rated VRRM
TJ = 150 °C
mA
1.0
Thermal-Mechanical Specifications
Parameters
20ETS..FP Units
Conditions
TJ
Max.JunctionTemperatureRange
-40to150
-40to150
1.5
°C
°C
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
°C/W
DCoperation
toCase
RthJA Max.ThermalResistanceJunction
62
°C/W
toAmbient
RthCS Typ.ThermalResistanceCase
toHeatsink
1.5
°C/W
Mountingsurface,smoothandgreased
wt
T
ApproximateWeight
MountingTorque
2(0.07)
g(oz.)
Min.
6(5)
Kg-cm
(Ibf-in)
Max.
12(10)
CaseStyle
TO-220FULLPAK
(94/V0)
2
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20ETS..FP SAFEIR Series
Bulletin I2134 rev. C 03/99
150
140
130
120
110
100
90
150
20ETS.. Series
(DC) =1.5 K/W
20ETS.. Series
R
R
(DC)= 1.5 K/W
thJC
thJC
140
130
120
110
100
90
Conduction Angle
ConductionPeriod
30°
60°
90°
30°
120°
60°
180°
90°
120°
180°
80
DC
70
80
0
2
4
6
8 10 12 14 16 18 20 22
0
5
10 15 20 25 30 35
Average Forward Current (A)
Average Forward Current (A)
Fig.1-CurrentRatingCharacteristics
Fig.2-CurrentRatingCharacteristics
30
25
20
15
10
5
35
30
25
20
15
10
5
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Limit
RMS Limit
Conduction Angle
Conduction Period
20ETS.. Series
T =150°C
20ETS.. Series
T = 150°C
J
J
0
0
0
4
8
12
Average Forward Current (A)
Fig.3-ForwardPowerLossCharacteristics
16
20
24
0
5
10
15
20
25
Average Forward Current (A)
Fig.4-ForwardPowerLossCharacteristics
300
300
250
200
150
100
50
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T = 150°C
At Any Rated Load Condition And With
Applied Following Surge.
Rated V
RRM
Initial T = 150°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Voltage Reapplied
250
200
150
100
50
Rated V
Reapplied
RRM
20ETS.. Series
20ETS.. Series
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig.5-MaximumNon-RepetitiveSurgeCurrent
Fig.6-MaximumNon-RepetitiveSurgeCurrent
3
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20ETS..FP SAFEIR Series
Bulletin I2134 rev. C 03/99
1000
100
10
T = 25°C
J
T =150°C
J
20ETS.. Series
1
0
0.5
Instantaneous Forward Voltage (V)
Fig.7-ForwardVoltageDropCharacteristics
1
1.5
2
2.5
3
3.5
4
10
1
D= 0.50
D= 0.33
D= 0.25
D= 0.17
D= 0.08
Steady State Value
(DC Operation)
0.1
Single Pulse
0.001
20ETS.. Series
0.1
0.01
0.0001
0.01
Square Wave Pulse Duration (s)
Fig.8-ThermalImpedanceZthJCCharacteristics
1
4
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20ETS..FP SAFEIR Series
Bulletin I2134 rev. C 03/99
OutlineTable
10.6
10.4
HOLE ø 3.4
3.1
2.8
2.6
10°
0.9
0.7
0.48
0.44
2.85
2.54
TYP.
1.15
TYP
1.4
2.54 TYP.
1.05
1.3
2.65
R0.7 (2 PLACES)
R0.5
Dimensionsinmillimeters
5°± 0.5°
5°± 0.5°
Ordering Information Table
Device Code
20
E
T
S
16 FP
1
2
4
5
6
3
3
1
1
2
-
-
Current Rating
ANODE
CATHODE
Circuit Configuration:
E = Single Diode
Package:
3
4
-
-
T = TO-220AC
Type of Silicon:
08 = 800V
S = Standard Recovery Rectifier
Voltage code: Code x 100 = VRRM
12 = 1200V
16 = 1600V
5
6
-
-
TO-220 FULLPAK
5
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20ETS..FP SAFEIR Series
Bulletin I2134 rev. C 03/99
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
EUROPEANHEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
6
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