22GQ100PBF [INFINEON]
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| 型号： | 22GQ100PBF |
| 厂家： | 
Infineon |
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| 文件： | 总4页 (文件大小：316K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -20353D
SCHOTTKYRECTIFIER
HIGH EFFICIENCY SERIES
22GQ100
30A, 100V
MajorRatingsandCharacteristics
Description/Features
The 22GQ100 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic isolated
TO-254AA package. The device's forward voltage drop
and reverse leakage current are optimized for the lowest
power loss and the highest circuit efficiency for typical high
frequency switching power supplies and resonent power
converters. Full MIL-PRF-19500 quality conformance
testing is available on source controlled drawings to TX,
TXV and S levels.
Characteristics
22GQ100 Units
IIF(AV) Rectangular
waveform
VRRM
30
A
V
100
400
0.90
IFSM @ tp = 8.3ms half-sine
VF @ 30Apk, TJ =125°C
A
V
TJ, Tstg Operating and storage -55 to 150
°C
• Hermetically Sealed
• High Frequency Operation
• Guard Ring for Enhanced Ruggedness and Long
Term Reliability
• Schottky Diodes Connected in Series
• Electrically Isolated
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
CASE STYLE
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
B
13.84 [.545]
13.59 [.535]
1
2
3
C
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B A
(ISOLATEDBASE)
NOTES :
1. DIMENS IONING & T OLERANCINGPER ASME Y14.5M-1994.
2. AL L DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
3. CONT ROLLING DIMENSION: INCH.
2
1
3
ANODE
CATHODE
4. CONFORMS TO JEDEC OUTLINE T O-254AA.
IRCaseStyleTO-254AA
www.irf.com
1
02/22/02
22GQ100
Voltage Ratings
Part number
Max. DC Reverse Voltage (V)
22GQ100
100
VR
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
Limits Units
Conditions
IF(AV) Max. AverageForwardCurrent
30
A
50% duty cycle @ TC = 100°C, rectangular waveform
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive
Surge Current
400
A
@ tp = 8.3 ms half-sine
ElectricalSpecifications
Parameters
Limits Units
Conditions
VFM
Max. ForwardVoltageDrop
1.1
1.6
0.9
1.3
0.8
45
V
@ 20A
TJ = 25°C
@ 35A
See Fig. 1
V
V
@ 20A
TJ =1 25°C
@ 35A
V
IRM
Max. Reverse Leakage Current
See Fig. 2
mA
mA
pF
nH
TJ = 25°C
VR = rated VR
TJ = 125°C
CT
LS
Max. Junction Capacitance
Typical Series Inductance
1400
7.8
VR = 5VDC ( 1MHz, 25°C )
Measured from anode lead to cathode lead
6mm ( 0.025 in.) from package
Thermal-MechanicalSpecifications
Parameters
Limits Units
Conditions
TJ
Max.JunctionTemperatureRange
-55 to 150
-55 to 150
1.0
°C
Tstg
Max.StorageTemperatureRange
°C
RthJC Max. Thermal Resistance, Junction
to Case
°C/W
DCoperation
See Fig. 4
wt
Weight(Typical)
Die Size
9.3
g
200X200
mils
Case Style
TO-254AA
Pulse Width < 300µs, Duty Cycle < 2%
2
www.irf.com
22GQ100
100
10
T
= 150°C
J
125°C
100°C
1
0.1
0.01
0.001
0.0001
25°C
A
0
20
40
60
80
100
Reverse Voltage - V (V)
R
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Fig. 1 - Max. Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
www.irf.com
3
22GQ100
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
22GQ100
RthJC (DC) = 1.0°C/W
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/02
4
www.irf.com
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