25MT060WF [INFINEON]
FULL-BRIDGE IGBT MTP; 全桥IGBT MTP
| 型号： | 25MT060WF |
| 厂家： | 
Infineon |
| 描述： | FULL-BRIDGE IGBT MTP |
| 文件： | 总3页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Target Data 05/01
25MT060WF
Warp Speed IGBT
"FULL-BRIDGE" IGBT MTP
Features
•
•
Gen. 4WarpSpeedIGBTTechnology
HEXFREDTM AntiparallelDiodeswith
UltraSoftReverseRecovery
VCES = 600V
VCE(on) typ. = 2.2V @
VGE = 15V, IC = 25A
TC = 25°C
•
•
•
•
Very Low Conduction and Switching Losses
Optional SMT Thermystor Inside
AluminumNitrideDBC
Very Low Stray Inductance Design for
HighSpeedOperation
Benefits
•
•
Optimized for Welding, UPS and SMPS Applications
Operating Frequencies > 20 kHz Hard Switching,
>200 kHz Resonant Mode
•
•
•
•
LowEMI, requiresLessSnubbing
Direct Mounting to Heatsink
PCB SolderableTerminals
VeryLowJunction-to-CaseThermalResistance
Absolute Maximum Ratings
Parameters
Max
600
Units
V
VCES
Collector-to-Emitter Voltage
IC
Continuos Collector Current
@ TC = 25°C
@ TC = 100°C
50
25
A
ICM
ILM
I F
IFM
VGE
VISOL
Pulsed Collector Current
Peak Switching Current
Diode Continuous Forward Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
200
200
25
200
± 20
2500
@ TC = 100°C
V
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
PD
Maximum Power Dissipation
@ TC = 25°C
@ TC = 100°C
900
400
W
1
25MT060WF
Target Data 05/01
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
V(BR)CES Collector-to-EmitterBreakdownVoltage 600
VCE(on) Collector-to-Emitter Voltage
V
VGE = 0V, IC = 250µA
VGE = 15V, IC = 25A
VGE = 15V, IC = 25A, TJ = 150°C
IC = 250µA
1.85
1.7
VGE(th)
Gate Threshold Voltage
3
6
∆VGE(th)/ Temperature Coeff. of
-
mV/°C VGE = VCE, IC = 500µA
∆TJ
gfe
Threshold Voltage
Forward Transconductance
Collector-to-Emiter Leaking Current
40
S
VCE = 100V, IC = 25A
ICES
250
µA VGE = 0V, VCE = 600V
5000
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
1.3
1.2
V
IF = 25A, VGE = 0V
IF = 25A, VGE = 0V, TJ = 150°C
Gate-to-Emitter Leakage Current
± 100 nA VGE = ± 20V
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
Q
Q
Q
TotalGateCharge(turn-on)
Gate-EmitterCharge(turn-on)
Gate-CollectorCharge(turn-on)
180
25
63
nC IC = 25A
VCC = 400V
g
ge
gc
VGE = 15V
E
E
E
C
C
C
trr
Irr
Qrr
di
Turn-OnSwitchingLoss
Turn-OffSwitchingLoss
TotalSwitchingLoss
Input Capacitance
950
320
µJ
Rg1 = Rg2 = 5Ω , IC = 25A
VCC = 480V
on
off(1)
ts(1)
ies
oes
res
1270
4000
VGE = ±15V
pF VGE = 0V
Output Capacitance
260
68
50
4.5
112
250
VCC = 30V
f = 1.0 MHz
ReverseTransfer Capacitance
DiodeReverseRecoveryTime
DiodePeakReverseCurrent
Diode RecoveryCharge
ns VR = 200V, IC = 25A
A
nC
A/µs
di/dt = 200A/µs
M/ DiodePeakRateofFallofRecovery
Duringtb
(rec) dt
Thermal- Mechanical Specifications
Parameters
OperatingJunctionTemperatureRange
StorageTemperatureRange
Min
- 40
- 40
Typ
Max
150
125
Units
°C
TJ
TSTG
RthJC
RthCS
Junction-to-Case
IGBT
0.7
0.9
°C/ W
Diode
Module
Case-to-Sink
(Heatsink Compound Thermal Conductivity = 1 W/mK)
0.06
66
Weight
g
2
25MT060WF
Target Data 05/01
Outline Table
Dimensions in millimeters
Data and specifications subject to change without notice.
This product has been designed for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 05/01
3
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